JP2004508728A5 - - Google Patents
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- JP2004508728A5 JP2004508728A5 JP2002525911A JP2002525911A JP2004508728A5 JP 2004508728 A5 JP2004508728 A5 JP 2004508728A5 JP 2002525911 A JP2002525911 A JP 2002525911A JP 2002525911 A JP2002525911 A JP 2002525911A JP 2004508728 A5 JP2004508728 A5 JP 2004508728A5
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- Prior art keywords
- chuck
- electrostatic chuck
- porous
- region
- electrostatic
- Prior art date
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Description
【特許請求の範囲】
【請求項１】 ａ） 裏面とチャック面とを有するチャック本体と、
ｂ） 前記チャック本体内の電極と、
ｃ） 前記裏面と前記チャック面との間を流体的に通じさせる少なくとも１つの管路とを備え、該管路に前記チャック本体と一体化される多孔領域が設けられる静電チャック。
【請求項２】 前記チャック本体がセラミック製チャック本体である請求項１に記載の静電チャック。
【請求項３】 前記多孔領域が該静電チャックの前記裏面から前記チャック面まで延びる請求項２に記載の静電チャック。
【請求項４】 前記多孔領域が前記管路を通って部分的に延びる請求項２に記載の静電チャック。
【請求項５】 前記チャック本体の化学組成と前記多孔領域の化学組成とが本質的に同一である請求項２に記載の静電チャック。
【請求項６】 前記多孔領域が結合成分を含む請求項５に記載の静電チャック。
【請求項７】 前記結合成分がアルミン酸イットリウムまたはイットリアを含む請求項６に記載の静電チャック。
【請求項８】 前記電極が上面および下面を有し、前記チャック本体が、
ａ） 前記上面と前記チャック面との間の第一誘電層と、
ｂ） 前記下面と前記裏面との間の基材とを有し、
前記多孔領域が前記第一誘電層または前記基材のうちの一方またはその両方に一体的に接合される請求項１に記載の静電チャック。
【請求項９】 前記セラミック製チャック本体および前記多孔領域が、窒化アルミニウム、Ａｌ2Ｏ3、Ａｌ2Ｏ3−ＴｉＯ2、Ｓｉ3Ｎ4、ＳｉＣ、ＢＮ、Ｙ2Ｏ3およびアルミン酸イットリウムのうちの少なくとも一つを含む請求項１に記載の静電チャック。
【請求項１０】 前記多孔領域の気孔率が約１０〜約６０％である請求項１に記載の静電チャック。
【請求項１１】 少なくとも２つの多孔領域があり、該少なくとも二つの多孔領域の気孔率が異なる請求項１０に記載の静電チャック。
【請求項１２】 ａ） 裏面とチャック面とを有するチャック本体と、
ｂ） 前記チャック本体内の電極とを備え、
前記チャック本体が、本体裏面と前記チャック面との間を流体的に通じさせるための多孔構造を有する静電チャック。
【請求項１３】 ａ） 静電チャック本体の未処理本体を形成する工程であって、前記未処理本体が除去可能な粒子を含む少なくとも１つの領域を有する、工程と、
ｂ） 前記静電チャック本体を形成するために前記未処理本体を加熱する工程と、
ｃ） 前記粒子を取り除いて、前記静電チャック本体に多孔領域を形成する工程とを具備する静電チャックの生産方法。
【請求項１４】 ａ） 静電チャック本体の未処理本体に該未処理本体の焼き締め後に多孔質となる少なくとも１つの未処理領域を形成する工程と、
ｂ） 前記未処理本体を焼き締めて、セラミック製静電チャック本体を形成する工程とを具備し、前記セラミック製静電チャック本体が少なくとも１つの多孔領域を有する静電チャックの生産方法。
【請求項１５】 前記形成された未処理領域が焼結助剤を含む請求項１４に記載の生産方法。
【請求項１６】 前記形成された未処理領域が、Ｙ2Ｏ3、ハロゲン化カルシウム、酸化カルシウム、硝酸カルシウム、Ｃｒ2Ｏ3、ＳｉＯ2およびＢＮのうちの少なくとも１つの焼結助剤を含む請求項１５に記載の生産方法。
【請求項１７】 前記形成された未処理領域が重合体成分を含み、該重合対成分は該未処理本体の焼き締め中に分解され、それによって気孔が残されて前記静電チャック本体の多孔領域が形成される請求項１４に記載の生産方法。
【請求項１８】 前記形成された未処理領域が、Ａｌ2Ｏ3、Ａｌ2Ｏ3−ＴｉＯ2、Ｓｉ3Ｎ4、ＳｉＣ、ＢＮ、Ｙ2Ｏ3およびアルミン酸イットリウムのうちの少なくとも１つを含む請求項１４に記載の生産方法。
【請求項１９】 ａ） 静電チャックの高密度なセラミック本体に少なくとも１つの多孔プラグを形成する工程を具備し、前記多孔プラグが結合剤を含み、
ｂ） 前記多孔プラグを加熱して、前記多孔プラグを前記静電チャックの前記高密度なセラミック本体と一体化する工程をさらに具備する静電チャックの生産方法。
【請求項２０】 ウェハーの工程温度を調整する調整方法であり、
ａ） ウェハーをセラミック製静電チャックのチャック面で支える工程を具備し、前記静電チャックが該静電チャックの裏面から前記チャック面まで延びる多孔管路を有し、
ｂ） 前記多孔管路を通って前記チャック面まで熱伝導流体を流通させて、ウェハーの処理温度を調整する工程をさらに具備する調整方法。
【請求項２１】 ウェハーの工程温度を調整する調整方法であり、
ａ） ウェハーを静電チャックのチャック面で支える工程を具備し、前記静電チャックが前記裏面から前記チャック面まで延びる管路を有し、該管路に多孔領域が設けられ、
ｂ） 前記管路を通って前記チャック面まで熱伝導流体を流通させて、ウェハーの処理温度を調整する工程をさらに具備する調整方法。
[Claims]
1. a) a chuck body having a back surface and a chuck surface;
b) an electrode in the chuck body;
c) An electrostatic chuck comprising at least one conduit for fluidly communicating between the back surface and the chuck surface, wherein the conduit has a porous region integrated with the chuck body.
2. The electrostatic chuck according to claim 1, wherein the chuck body is a ceramic chuck body.
3. The electrostatic chuck according to claim 2, wherein said porous region extends from said back surface of said electrostatic chuck to said chuck surface.
4. The electrostatic chuck of claim 2, wherein said porous region extends partially through said conduit.
5. The electrostatic chuck according to claim 2, wherein a chemical composition of the chuck body is substantially the same as a chemical composition of the porous region.
6. The electrostatic chuck according to claim 5 , wherein said porous region includes a binding component.
7. The electrostatic chuck according to claim 6 , wherein the bonding component includes yttrium aluminate or yttria.
8. The device according to claim 1, wherein the electrode has an upper surface and a lower surface, and the chuck body includes:
a) a first dielectric layer between the top surface and the chuck surface;
b) having a substrate between the lower surface and the rear surface;
The electrostatic chuck of claim 1, wherein the porous region is integrally joined to one or both of the first dielectric layer and the substrate.
9. The ceramic chuck body and the porous region are made of aluminum nitride, Al 2 O 3 , Al 2 O 3 —TiO 2 , Si 3 N 4 , SiC, BN, Y 2 O 3 and yttrium aluminate. 2. The electrostatic chuck according to claim 1, comprising at least one of them.
10. The electrostatic chuck according to claim 1, wherein the porosity of the porous region is about 10 to about 60%.
11. The electrostatic chuck according to claim 10 , wherein there are at least two porous regions, and the at least two porous regions have different porosity.
12. A) a chuck body having a back surface and a chuck surface;
b) an electrode in the chuck body;
An electrostatic chuck, wherein the chuck main body has a porous structure for fluidly communicating between a back surface of the main body and the chuck surface.
13. A) forming a green body of an electrostatic chuck body, wherein the green body has at least one region containing removable particles;
b) heating the green body to form the electrostatic chuck body;
c) removing the particles to form a porous region in the main body of the electrostatic chuck.
14. a) forming at least one unprocessed area on the unprocessed body of the electrostatic chuck body that becomes porous after baking the unprocessed body;
b) baking said untreated body to form a ceramic electrostatic chuck body, said ceramic electrostatic chuck body having at least one porous region.
15. The production method according to claim 14, wherein the formed unprocessed region contains a sintering aid.
16. The formed untreated region contains at least one sintering aid of Y 2 O 3 , calcium halide, calcium oxide, calcium nitrate, Cr 2 O 3 , SiO 2 and BN. The production method according to claim 15.
17. The formed untreated region includes a polymer component, and the polymerized counter component is decomposed during baking of the untreated body, thereby leaving pores and voids in the electrostatic chuck body. The production method according to claim 14, wherein the region is formed.
18. The method according to claim 18, wherein the formed unprocessed region is formed of at least one of Al 2 O 3 , Al 2 O 3 —TiO 2 , Si 3 N 4 , SiC, BN, Y 2 O 3 and yttrium aluminate. The production method according to claim 14, comprising:
19. A method comprising the steps of: a) forming at least one porous plug in a dense ceramic body of an electrostatic chuck, said porous plug comprising a binder;
b) A method for producing an electrostatic chuck, further comprising heating the porous plug to integrate the porous plug with the high-density ceramic body of the electrostatic chuck.
20. An adjusting method for adjusting a process temperature of a wafer,
a) supporting a wafer on a chuck surface of a ceramic electrostatic chuck, wherein the electrostatic chuck has a perforated conduit extending from the back surface of the electrostatic chuck to the chuck surface;
b) An adjustment method further comprising the step of adjusting the processing temperature of the wafer by flowing a heat transfer fluid to the chuck surface through the perforated conduit.
21. An adjusting method for adjusting a process temperature of a wafer,
a) supporting a wafer on a chuck surface of an electrostatic chuck, wherein the electrostatic chuck has a conduit extending from the back surface to the chuck surface, wherein the conduit has a porous region;
b) An adjustment method further comprising the step of flowing a heat transfer fluid through the conduit to the chuck surface to adjust the processing temperature of the wafer.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/655,324 US6606234B1 (en) | 2000-09-05 | 2000-09-05 | Electrostatic chuck and method for forming an electrostatic chuck having porous regions for fluid flow |
| US09/655,324 | 2000-09-05 | ||
| PCT/US2001/024135 WO2002021590A2 (en) | 2000-09-05 | 2001-08-01 | Electrostatic chuck with porous regions |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004508728A JP2004508728A (en) | 2004-03-18 |
| JP2004508728A5 true JP2004508728A5 (en) | 2008-09-18 |
| JP4959905B2 JP4959905B2 (en) | 2012-06-27 |
Family
ID=24628428
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002525911A Expired - Lifetime JP4959905B2 (en) | 2000-09-05 | 2001-08-01 | Electrostatic chuck having a porous region |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US6606234B1 (en) |
| EP (1) | EP1316110B1 (en) |
| JP (1) | JP4959905B2 (en) |
| KR (1) | KR100557695B1 (en) |
| AT (1) | ATE417358T1 (en) |
| AU (1) | AU2001277237A1 (en) |
| DE (1) | DE60136940D1 (en) |
| TW (1) | TW526521B (en) |
| WO (1) | WO2002021590A2 (en) |
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-
2000
- 2000-09-05 US US09/655,324 patent/US6606234B1/en not_active Expired - Lifetime
-
2001
- 2001-08-01 JP JP2002525911A patent/JP4959905B2/en not_active Expired - Lifetime
- 2001-08-01 KR KR1020037003208A patent/KR100557695B1/en active IP Right Grant
- 2001-08-01 DE DE60136940T patent/DE60136940D1/en not_active Expired - Fee Related
- 2001-08-01 AT AT01955029T patent/ATE417358T1/en not_active IP Right Cessation
- 2001-08-01 EP EP01955029A patent/EP1316110B1/en not_active Expired - Lifetime
- 2001-08-01 AU AU2001277237A patent/AU2001277237A1/en not_active Abandoned
- 2001-08-01 WO PCT/US2001/024135 patent/WO2002021590A2/en active IP Right Grant
- 2001-08-07 TW TW090119231A patent/TW526521B/en not_active IP Right Cessation
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