JP2004503947A5 - - Google Patents

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Publication number
JP2004503947A5
JP2004503947A5 JP2002511446A JP2002511446A JP2004503947A5 JP 2004503947 A5 JP2004503947 A5 JP 2004503947A5 JP 2002511446 A JP2002511446 A JP 2002511446A JP 2002511446 A JP2002511446 A JP 2002511446A JP 2004503947 A5 JP2004503947 A5 JP 2004503947A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2002511446A
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JP4785327B2 (ja
JP2004503947A (ja
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Publication date
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Priority claimed from PCT/EP2001/006806 external-priority patent/WO2001097349A1/de
Publication of JP2004503947A publication Critical patent/JP2004503947A/ja
Publication of JP2004503947A5 publication Critical patent/JP2004503947A5/ja
Application granted granted Critical
Publication of JP4785327B2 publication Critical patent/JP4785327B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2002511446A 2000-06-15 2001-06-15 半導体レーザー用レーザー共振器及びレーザー共振器を製造する方法 Expired - Fee Related JP4785327B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10029402 2000-06-15
DE10029402.2 2000-06-15
PCT/EP2001/006806 WO2001097349A1 (de) 2000-06-15 2001-06-15 Laserresonatoren mit modenselektierenden phasenstrukturen

Publications (3)

Publication Number Publication Date
JP2004503947A JP2004503947A (ja) 2004-02-05
JP2004503947A5 true JP2004503947A5 (ja) 2010-12-24
JP4785327B2 JP4785327B2 (ja) 2011-10-05

Family

ID=7645765

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002511446A Expired - Fee Related JP4785327B2 (ja) 2000-06-15 2001-06-15 半導体レーザー用レーザー共振器及びレーザー共振器を製造する方法

Country Status (8)

Country Link
US (1) US6920160B2 (ja)
EP (1) EP1295371B1 (ja)
JP (1) JP4785327B2 (ja)
AT (1) ATE259992T1 (ja)
AU (1) AU8386501A (ja)
DE (1) DE50101521D1 (ja)
DK (1) DK1295371T3 (ja)
WO (1) WO2001097349A1 (ja)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003075419A2 (en) * 2002-03-04 2003-09-12 Forskningscenter Risø High-power diode laser system
EP1669799B1 (en) * 2003-10-01 2013-06-19 Mitsubishi Denki Kabushiki Kaisha Wavelength conversion laser and image display
DE102004047493B3 (de) * 2004-09-23 2006-05-24 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Laserresonator mit oberflächenstrukturierten Endspiegeln und Verfahren zu ihrer Herstellung
US7929585B2 (en) * 2006-11-20 2011-04-19 Tilleman Michael M High brightness semiconductor laser diode arrays
DE102008025922B4 (de) 2008-05-30 2020-02-06 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaser mit Phasenstruktur
DE102008058436B4 (de) * 2008-11-21 2019-03-07 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaserchip
DE102008058435B4 (de) 2008-11-21 2011-08-25 OSRAM Opto Semiconductors GmbH, 93055 Kantenemittierender Halbleiterlaser
DE102009056387B9 (de) 2009-10-30 2020-05-07 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaser mit einem Phasenstrukturbereich zur Selektion lateraler Lasermoden
JP4862960B2 (ja) * 2010-12-10 2012-01-25 三菱電機株式会社 波長変換レーザ装置および画像表示装置
DE102012110613A1 (de) * 2012-11-06 2014-05-08 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
JP6476213B2 (ja) * 2014-03-12 2019-02-27 オーイーウェーブス, インク.Oewaves, Inc. モードファミリーを除去するためのシステム及び方法
US9403237B2 (en) 2014-03-12 2016-08-02 Oewaves, Inc. Systems and methods for removing mode families
US10107962B2 (en) * 2015-02-20 2018-10-23 Hewlett Packard Enterprise Development Lp Reduction of back reflections
RU210122U1 (ru) * 2021-12-30 2022-03-29 Федеральное государственное бюджетное образовательное учреждение высшего образования "Саратовский национальный исследовательский государственный университет имени Н.Г. Чернышевского" Пространственно-частотный фильтр на магнитостатических волнах

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4783788A (en) * 1985-12-16 1988-11-08 Lytel Incorporated High power semiconductor lasers
US4873788A (en) * 1988-06-24 1989-10-17 Viramontes Jose A Bracket assembly and plant leaf lifter and protector
JPH0268975A (ja) * 1988-09-02 1990-03-08 Seiko Epson Corp 半導体レーザ
JPH03145180A (ja) * 1989-10-30 1991-06-20 Nec Corp 半導体レーザ
JPH03191304A (ja) * 1989-12-20 1991-08-21 Fujitsu Ltd 複合形光共振器及び半導体レーザとその制御方法及び光フィルタ
US5033054A (en) * 1990-08-17 1991-07-16 Spectra Diode Laboratories, Inc. Phase conjugate laser
JPH04154185A (ja) * 1990-10-17 1992-05-27 Mitsubishi Electric Corp 半導体レーザ装置
US5272714A (en) * 1991-12-12 1993-12-21 Wisconsin Alumni Research Foundation Distributed phase shift semiconductor laser
DE4212153A1 (de) 1992-04-10 1993-10-14 Sel Alcatel Ag Halbleiterlaser mit verteilter Rückkopplung
US5272711A (en) * 1992-05-12 1993-12-21 Trw Inc. High-power semiconductor laser diode
DE4322163A1 (de) * 1993-07-03 1995-01-12 Ant Nachrichtentech Auf DFB- oder DBR-Gitter basierendes optoelektronisches Bauelement mit quasi-kontinuierlich axial verteilbarer Brechungsindex-Variation, mit axial beliebig verteilbarer und variierbarer Phasenverschiebung, sowie mit axial quasi-kontinuierlich variierbarem Gitter-Kopplungskoeffizienten
JP3710559B2 (ja) * 1996-07-01 2005-10-26 富士通株式会社 発光半導体装置
JP2000036638A (ja) * 1998-07-21 2000-02-02 Fujitsu Ltd 半導体発光装置
US6167073A (en) * 1998-07-23 2000-12-26 Wisconsin Alumni Research Foundation High power laterally antiguided semiconductor light source with reduced transverse optical confinement

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