JP2004363632A - Light-emitting device and forming method thereof - Google Patents

Light-emitting device and forming method thereof Download PDF

Info

Publication number
JP2004363632A
JP2004363632A JP2004278872A JP2004278872A JP2004363632A JP 2004363632 A JP2004363632 A JP 2004363632A JP 2004278872 A JP2004278872 A JP 2004278872A JP 2004278872 A JP2004278872 A JP 2004278872A JP 2004363632 A JP2004363632 A JP 2004363632A
Authority
JP
Japan
Prior art keywords
light
led chip
emitting device
light emitting
support
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2004278872A
Other languages
Japanese (ja)
Other versions
JP3852462B2 (en
Inventor
Motokazu Yamada
元量 山田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Chemical Industries Ltd
Original Assignee
Nichia Chemical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Chemical Industries Ltd filed Critical Nichia Chemical Industries Ltd
Priority to JP2004278872A priority Critical patent/JP3852462B2/en
Publication of JP2004363632A publication Critical patent/JP2004363632A/en
Application granted granted Critical
Publication of JP3852462B2 publication Critical patent/JP3852462B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/2919Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a light-emitting device which has stable light emission characteristics, high in light usability, and high in yield, regardless of usage environment, and which can be formed small. <P>SOLUTION: The light-emitting device includes a transparent support with a recess and an LED chip, wherein the concave is provided with a transparent adhesive containing a fluorescent material, and the LED chip is provided on the transparent adhesive. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

本願発明は、LED表示器、光通信機器、光プリンターヘッドや光センサーなどの各種制御機器に用いられる光源などに利用される発光装置に関し、特に、量産性が良く且つ使用環境下によらず信頼性が高い発光装置に関する。   The present invention relates to a light emitting device used for a light source used for various control devices such as an LED display, an optical communication device, an optical printer head and an optical sensor, and more particularly, has high mass productivity and is reliable regardless of the use environment. And a light-emitting device with high reliability.

今日、LSIなどのシリコンテクノロジーや光通信技術等の発展により、大量の情報を高速に処理及び伝送することが可能となった。これに伴い、多量な画像情報が処理可能なフルカラー化や高精細化した光プリンタヘッド、表示装置や各種制御機器に用いられる光センサーなどに対する社会の要求がますます高まりを見せている。特に、特性が安定し小型化された発光装置については極めて要求が高く種々開発されてきている。このような発光装置が開示された文献として、特許文献1や特許文献2などが挙げられる。   Today, with the development of silicon technology such as LSI, optical communication technology and the like, it has become possible to process and transmit a large amount of information at high speed. Along with this, social demands for a full-color and high-definition optical printer head capable of processing a large amount of image information, an optical sensor used for a display device and various control devices, and the like are increasing. In particular, light-emitting devices with stable characteristics and miniaturization are extremely demanding and variously developed. Documents that disclose such a light emitting device include Patent Document 1 and Patent Document 2.

発光装置の具体的一例を図5に示す。LEDチップ502の一方の電極をリードフレーム上に、Agペースト504などを用いて接続すると共にLEDチップの他方の電極を導電性ワイヤー503であるAu線などで別途電気的に接続させてある。発光装置はLEDチップからの光を集光させ効率的に取り出すためにLEDチップ上にエポキシ樹脂などによりレンズ形状501にモールドされている。導電性ワイヤーを用いて電気的接続を行うと共にモールド部材で被覆する発光装置は、比較的簡単に歩留まり良く小型に形成させることができる。
特開平7−231120号公報 特開平7−22651号公報
FIG. 5 shows a specific example of the light emitting device. One electrode of the LED chip 502 is connected to a lead frame using an Ag paste 504 or the like, and the other electrode of the LED chip 502 is separately electrically connected to the conductive wire 503 using an Au wire or the like. The light emitting device is molded into a lens shape 501 with an epoxy resin or the like on the LED chip in order to collect and efficiently extract light from the LED chip. A light-emitting device that is electrically connected using a conductive wire and covered with a mold member can be formed relatively easily with good yield and small size.
JP-A-7-231120 JP-A-7-22651

しかしながら、発光面側に導電性ワイヤーなどがあるとLEDチップが発光した光が導電性ワイヤー、導電性ワイヤーのボンディング部や電極の陰になる。LEDチップに設けられた発光面側の電極下部などで発光した光などが有効に外部にでてこないという問題がある。また、LEDチップを感光紙などの記録媒体に照射させる場合、LEDチップと記録媒体間に少なくとも導電性ワイヤー分の厚みが余分にいる。そのため導電性ワイヤーが邪魔で近接できない。また、アパチャーなどの遮光部材を用いてLEDチップが発光した光をスポット光とする場合においても、導電性ワイヤーなどが陰になる場合もある。このため、均一な光特性が得られず製品としては不良になるものもあった。発光素子の一方の面側に正極及び負極の電極など複数の電極を形成した場合は、上述の導電性ワイヤーが増えるために遮光などの問題がさらに顕著な傾向となる。   However, if there is a conductive wire or the like on the light emitting surface side, the light emitted by the LED chip will be behind the conductive wire, the bonding portion of the conductive wire, and the electrode. There is a problem that light or the like emitted from the lower part of the electrode on the light emitting surface side provided on the LED chip does not effectively go outside. Further, when irradiating the recording medium such as photosensitive paper with the LED chip, there is an extra thickness of at least the conductive wire between the LED chip and the recording medium. Therefore, the conductive wires cannot be close to each other because of obstruction. Further, even when light emitted from the LED chip is used as a spotlight using a light-blocking member such as an aperture, the conductive wire or the like may be shaded. For this reason, uniform optical characteristics could not be obtained, and some products were defective. In the case where a plurality of electrodes such as a positive electrode and a negative electrode are formed on one surface side of the light emitting element, problems such as light shielding tend to be more remarkable because the number of conductive wires increases.

また、LEDチップからの光を集光させる場合LEDチップに樹脂などをモールド成形し一体にレンズ部などを形成させる。レンズ部により集光力をより高めようとするとLEDチップ表面からレンズ部の頂点であるモールド部の厚みが厚くなる場合がある。導電性ワイヤーで電気的に接続させたLEDチップをモールド部材で一体成形させるとモールド部材の厚みが厚くなるにつれ温度差の極めて激しい使用環境下においては発光装置の特性が劣化する傾向にある。特に、導電性ワイヤーの接続部が多い発光装置においては顕著になる。   Further, when condensing light from the LED chip, a resin or the like is molded on the LED chip to integrally form a lens portion or the like. In order to further increase the light condensing power by the lens portion, the thickness of the mold portion, which is the apex of the lens portion from the LED chip surface, may be increased. When an LED chip electrically connected by a conductive wire is integrally molded with a mold member, the characteristics of the light emitting device tend to deteriorate in a use environment in which a temperature difference is extremely large as the thickness of the mold member increases. In particular, it becomes remarkable in a light emitting device having a large number of connection portions of conductive wires.

さらに気泡などの混入を防ぎ発光特性を安定化させ、集光力を高めるためにはトランスファー成形などにより形成させたレンズを用いることが好ましい。しかしながら樹脂成形時に比較的高圧で所望の形状に成形させる。冷却硬化時に生じる樹脂収縮などの形成諸条件から導電性ワイヤーで電気的接続を取ったLEDチップを一体成形させることが難しい。レンズ部と発光素子とを密着して小型に形成させることができないという問題を有する。   Further, in order to prevent the inclusion of bubbles and the like, stabilize the light emission characteristics, and increase the light condensing power, it is preferable to use a lens formed by transfer molding or the like. However, the resin is molded into a desired shape at a relatively high pressure during resin molding. Due to various forming conditions such as resin shrinkage generated during cooling and curing, it is difficult to integrally mold an LED chip electrically connected with a conductive wire. There is a problem that the lens portion and the light emitting element cannot be formed in close contact with each other to be compact.

したがって、より優れた発光特性が求められる今日においては上記構成の発光装置では十分ではなく、更なる特性向上が求められている。本願発明はかかる問題に鑑み、導電性ワイヤーによって外部電極と電気的に接続されたLEDチップを持つ発光装置において、使用環境によらず発光特性が安定、光利用効率、歩留まりが高く小型に形成しうる発光装置とすることである。   Therefore, the light emitting device having the above configuration is not sufficient at present when better light emitting characteristics are required, and further improvement in characteristics is required. In view of such a problem, the present invention provides a light emitting device having an LED chip that is electrically connected to an external electrode by a conductive wire. A light emitting device.

本願発明は、透光性接着剤を介して透光性支持体上にLEDチップを配し、該LEDチップの前記透光性接着剤と接した面と対向する面側に有する電極と、前記透光性支持体に設けられた外部電極と、を導電性ワイヤーによって電気的に接続された発光装置である。また、LEDチップは透光性絶縁基板に形成された半導体上にそれぞれ正極及び負極の電極を有する発光装置であり、導電性ワイヤーを保護するための保護部材と、該保護部材上の反射部材と、を有する発光装置でもある。また、透光性接着剤に蛍光物質が含有されている発光装置である。透光性支持体上に少なくとも一箇所の開口部を有する遮光部材を設けた発光装置でもある。さらに、透光性支持体がLEDチップからの光の少なくとも一部を集光するレンズ部を有する発光装置でもある。
本発明に係る請求項1記載の発光装置は、凹部を備えた支持体上に透光性接着剤によって接着されたLEDチップを有する発光装置において、前記支持体は透光性支持体であって、且つ前記透光性接着剤は蛍光物質を含有してなることを特徴とする。
また、請求項2記載の発光装置は、請求項1記載の発光装置おいて、前記透光性支持体は、前記LEDチップを収納するための第1凹部を有し、その第1凹部の底部に前記凹部を有することを特徴とする。
さらに、請求項3記載の発光装置は、請求項1又は2に記載の発光装置において、前記透光性支持体に設けられた外部電極と、前記透光性接着剤に接した面と対向する面側に前記LEDチップの電極を有し、前記外部電極と前記電極が導電性ワイヤーによって接続されていることを特徴とする。
またさらに、請求項4記載の発光装置は、請求項3記載の発光装置において、前記LEDチップと前記導電性ワイヤーを保護する保護部材が設けられていることを特徴とする。
また、請求項5記載の発光装置は、請求項1〜4のうちのいずれか1つに記載の発光装置において、前記凹部を複数有する透光性支持体と前記複数の凹部に前記透光性接着剤によってそれぞれ接着される複数の前記LEDチップを有し、前記複数の凹部のうちの少なくとも1つに配された前記透光性接着剤は、蛍光物質が含有されていることを特徴とする。
さらに、請求項6記載の発光装置は、請求項5記載の発光装置において、前記透光性支持体において、隣接するLEDチップの間には少なくとも1つの遮光部が形成されていることを特徴とする。
The present invention is directed to disposing an LED chip on a light-transmitting support via a light-transmitting adhesive, and having an electrode on a surface side of the LED chip opposite to a surface in contact with the light-transmitting adhesive; This is a light-emitting device in which an external electrode provided on a light-transmitting support is electrically connected to an external electrode by a conductive wire. Further, the LED chip is a light emitting device having a positive electrode and a negative electrode respectively on a semiconductor formed on a light-transmitting insulating substrate, and includes a protective member for protecting a conductive wire, and a reflective member on the protective member. And a light emitting device having the same. Further, the light-emitting device includes a light-transmitting adhesive containing a fluorescent substance. This is also a light-emitting device in which a light-blocking member having at least one opening is provided on a light-transmitting support. Furthermore, the light-emitting device has a light-transmitting support having a lens unit that collects at least a part of light from the LED chip.
The light-emitting device according to claim 1 of the present invention is a light-emitting device having an LED chip bonded with a light-transmitting adhesive on a support having a recess, wherein the support is a light-transmitting support. The light-transmitting adhesive contains a fluorescent substance.
The light-emitting device according to claim 2 is the light-emitting device according to claim 1, wherein the translucent support has a first recess for accommodating the LED chip, and a bottom portion of the first recess. And the recess is provided.
Further, in the light emitting device according to the third aspect, in the light emitting device according to the first or second aspect, the external electrode provided on the translucent support is opposed to a surface in contact with the translucent adhesive. An electrode of the LED chip is provided on a surface side, and the external electrode and the electrode are connected by a conductive wire.
The light emitting device according to a fourth aspect is the light emitting device according to the third aspect, further comprising a protection member that protects the LED chip and the conductive wire.
According to a fifth aspect of the present invention, in the light emitting device according to any one of the first to fourth aspects, the translucent support having a plurality of the concave portions and the translucent member having the plurality of the concave portions are provided. It has a plurality of the LED chips respectively bonded by an adhesive, and the translucent adhesive disposed in at least one of the plurality of recesses contains a fluorescent substance. .
Furthermore, the light emitting device according to claim 6 is characterized in that, in the light emitting device according to claim 5, at least one light shielding portion is formed between adjacent LED chips in the translucent support. I do.

さらにまた、透光性支持体の凹部に透光性接着剤を介してLEDチップを固定する工程と、LEDチップの電極と、透光性支持体に設けられた外部電極と、を導電性ワイヤーによりワイヤーボンディングさせる工程と、透光性支持体の凹部内に配された導電性ワイヤー、LEDチップ上に反射部材を形成する工程と、を有する発光装置の形成方法でもある。   Furthermore, the step of fixing the LED chip to the concave portion of the light-transmitting support via a light-transmitting adhesive, and the steps of: connecting the electrode of the LED chip and the external electrode provided on the light-transmitting support to a conductive wire And a step of forming a reflective member on the conductive wire and the LED chip disposed in the concave portion of the translucent support.

このように、光取り出し部側と電気的接続部側とをLEDチップに対してそれぞれ機能分離して形成させることにより電気的接続部を導電性ワイヤーによって比較的容易に信頼性を高く形成させることができる。光り取り出し部の形成などに伴う圧力や封止部材の内部応力による電気的接続部材の断線などを防いだ発光装置とすることができる。また、特に透光性接着剤を介して固定させることにより効率よく光を導くと共に光軸を合わせることができる。さらに、光取り出し部材を別途形成させることができる。これにより、光取り出し部を気泡の混入などが極めて少なく集光力に優れた発光装置とさせることもできる。   As described above, by forming the light extraction portion side and the electrical connection portion side separately from each other with respect to the function of the LED chip, the electrical connection portion can be relatively easily formed with high reliability by the conductive wire. Can be. It is possible to provide a light-emitting device in which disconnection of an electrical connecting member due to pressure due to formation of a light extraction portion or internal stress of a sealing member is prevented. In particular, by fixing via a translucent adhesive, light can be efficiently guided and the optical axis can be aligned. Further, a light extraction member can be separately formed. This makes it possible to make the light extraction unit a light emitting device that is extremely free of air bubbles and has excellent light collecting power.

本願発明者は種々の実験の結果、光の取り出し部位と導電性ワイヤー形成部位とを機能分離させることにより量産性が良く、且つ使用環境によらず発光特性が安定な発光装置とすることができることを見いだし、これに基づいて本願発明を成すに到った。   As a result of various experiments, the inventor of the present application has found that a light emitting device having good mass productivity and stable light emitting characteristics regardless of the use environment can be obtained by separating the function of the light extraction portion and the conductive wire formation portion. Have been found, and based on this, the present invention has been accomplished.

光の取り出し部位と導電性ワイヤー形成部位とを分離させることにより、使用環境によらず発光特性が安定となる理由は定かではないが導電性ワイヤーによって電気的に接続されたLEDチップと一体成形させる光の取りだし部位に関係すると考えられる。   It is not clear why the light emission characteristics are stable regardless of the usage environment by separating the light extraction part and the conductive wire formation part, but it is integrally molded with the LED chip electrically connected by the conductive wire. It is thought to be related to the light extraction site.

即ち、LEDチップからの光を効率よく集光させるためにモールド部材をレンズ形状とさせ一体成形などさせると、集光率を高めるにつれ高温湿度サイクル下においては寿命が短くなるものがある。特に、LEDチップ表面からレンズを形成する部材の厚みが厚くなるにつれ内部応力が大きくなる。そのため、温度差の大きい使用環境下においてはLEDチップを構成する導電性ワイヤーがレンズ部を形成するモールド部材の内部応力により断線するためと考えられる。また、より集光能力の高いレンズを形成させる場合には、樹脂の種類などにもよるが150〜200kg/cm2ほどの成形圧力がかかるトランスファー成形などを使用することが好ましい。この場合、LEDチップの電極などと電気的に接続された導電性ワイヤーは透光性支持体成型時における圧力で断線などが生じる場合もある。 That is, when the mold member is formed into a lens shape and integrally molded in order to efficiently condense the light from the LED chip, the life may be shortened under a high-temperature and humidity cycle with an increase in the light-condensing rate. In particular, the internal stress increases as the thickness of the member forming the lens from the LED chip surface increases. Therefore, it is considered that the conductive wire constituting the LED chip is disconnected due to the internal stress of the mold member forming the lens portion under a use environment having a large temperature difference. When a lens having a higher light-collecting ability is formed, it is preferable to use transfer molding or the like that requires a molding pressure of about 150 to 200 kg / cm 2 , depending on the type of resin. In this case, the conductive wire electrically connected to the electrode of the LED chip or the like may be broken due to pressure during molding of the light-transmitting support.

本願発明は、LEDチップからの光を取り出す透光性支持体と導電性ワイヤーで接続された部位とを別体に形成させる。具体的には、図1BにチップタイプLEDの一例を示す。図1Bでは、集光能力の高いレンズを形成させるためにトランスファー成形によりレンズ部が一体成形された透光性支持体101を用いてある。透光性支持体101中には、外部電極105となる銀メッキされた銅板が埋め込まれている。また、レンズ部と反対側の透光性支持体上には、LEDチップが配される凹部が形成されている。凹部内にはさらに底辺が外部に向かって凸形状の凹部が設けられている。透光性支持体101のレンズ部と光軸が合うように透光性接着剤104としてエポキシ樹脂を用いてLEDチップを凹部内にダイボンディングさせてある。ダイボンド樹脂を硬化後、透光性支持体101中から凹部内に露出した外部電極105と、サファイア基板上に窒化ガリウム系化合物半導体を有するLEDチップ102の電極と、を導電性ワイヤー103である金線を用いてそれぞれワイヤーボンディングさせた。その後、凹部内のLEDチップ102、導電性ワイヤー103及び外部電極105などをチタン酸バリウムを含有させたシリコンゴムを塗布硬化させた保護部材兼反射部材106を設けることにより発光装置を形成させた。   According to the present invention, a light-transmitting support for extracting light from an LED chip and a portion connected by a conductive wire are formed separately. Specifically, FIG. 1B shows an example of a chip type LED. In FIG. 1B, in order to form a lens having a high light-collecting ability, a light-transmitting support body 101 having a lens portion integrally formed by transfer molding is used. A silver-plated copper plate serving as the external electrode 105 is embedded in the translucent support 101. In addition, a concave portion on which the LED chip is disposed is formed on the translucent support opposite to the lens unit. Inside the concave portion, a concave portion whose bottom is convex toward the outside is further provided. An LED chip is die-bonded in the concave portion using an epoxy resin as the translucent adhesive 104 so that the optical axis is aligned with the lens portion of the translucent support 101. After the die-bonding resin is cured, the external electrodes 105 exposed in the recesses from the light-transmitting support 101 and the electrodes of the LED chip 102 having a gallium nitride-based compound semiconductor on a sapphire substrate are connected to a conductive wire 103 by gold. Wire bonding was performed using a wire. After that, the LED chip 102, the conductive wire 103, the external electrode 105, and the like in the concave portion were provided with a protective member / reflective member 106 in which silicon rubber containing barium titanate was applied and cured to form a light emitting device.

このような発光装置の構成とすることによって光の取り出し部位と、導電性ワイヤー形成部位と、を分離させ高温度サイクルにおいても発光特性の安定した発光装置とすることができる。特に、本願発明においては集光能力を向上させた光取り出し部位とさせることができる。透光性接着剤を介して透光性支持体とLEDチップとを接続させることによりLEDチップからの光を効率よく導くと共に発光装置の光軸を容易に合わせることもできる。以下本願発明の各構成について詳述する。   With such a structure of the light emitting device, a light extraction portion and a conductive wire formation portion are separated from each other, so that a light emitting device having stable light emission characteristics even in a high temperature cycle can be obtained. In particular, in the present invention, it can be a light extraction portion with improved light-collecting ability. By connecting the translucent support and the LED chip via a translucent adhesive, light from the LED chip can be efficiently guided and the optical axis of the light emitting device can be easily adjusted. Hereinafter, each configuration of the present invention will be described in detail.

(透光性支持体101、201、301、401)
本願発明に用いられる透光性支持体101としては、半導体発光素子であるLEDチップ102を積置できると共にLEDチップ102からの発光波長の少なくとも一部或いはLEDチップ102からの光を利用した発光波長に対して実質的に透光性を有するものである。
(Translucent supports 101, 201, 301, 401)
As the translucent support 101 used in the present invention, an LED chip 102 which is a semiconductor light emitting element can be mounted, and at least a part of the emission wavelength from the LED chip 102 or the emission wavelength using light from the LED chip 102. Has a substantially light-transmitting property.

このような透光性支持体101は、用途や所望に応じて種々の形状、材料を用いることができる。具体的には、透光性支持体101に凸レンズや凹レンズを種々形成させることができる。また、透光性支持体に凹状や半円状などの窪みを形成させLEDチップ102の積置に利用させることもできる。このような窪みを利用することによってレンズ効果を持たせることもできる。従って、凹部内の底辺の少なくとも一部を凸形状や凹形状など種々の形状にし所望の配光特性を得ることができる。また、凹部を所望の大きさや形状に形成させることによって透光性支持体101上に積置されるLEDチップ102を固定させる透光性接着材104の量を種々制御させることもできる。透光性支持体上にはLEDチップ302を1個以上配置させても良い。この場合、それぞれ独立して駆動させるためにはLEDチップ302間に遮光部材310を配置させたり着色させておくことが望ましい。   Various shapes and materials can be used for such a light-transmitting support 101 as required or desired. Specifically, various kinds of convex lenses and concave lenses can be formed on the translucent support 101. In addition, a recess such as a concave shape or a semicircular shape can be formed in the light-transmitting support, and can be used for mounting the LED chips 102. A lens effect can be provided by using such a depression. Therefore, at least a part of the bottom in the concave portion can be formed into various shapes such as a convex shape and a concave shape, and desired light distribution characteristics can be obtained. In addition, by forming the concave portion into a desired size or shape, the amount of the light-transmitting adhesive 104 that fixes the LED chips 102 mounted on the light-transmitting support 101 can be variously controlled. One or more LED chips 302 may be provided on the translucent support. In this case, it is desirable that the light-shielding members 310 be arranged between the LED chips 302 or colored in order to be driven independently.

本願発明の透光性支持体101は、特にLEDチップの電気的接続部である導電性ワイヤーとは別に自由に設計することができるため成形圧力がかかる圧縮成形やトランスファー成形などを用いて形成することができる。即ち、透光性支持体101自体に優れた光学特性を持つレンズ部などを形成させることができる。   Since the translucent support 101 of the present invention can be freely designed, in particular, separately from the conductive wire, which is an electrical connection portion of the LED chip, it is formed by using compression molding, transfer molding, or the like in which molding pressure is applied. be able to. That is, a lens portion having excellent optical characteristics can be formed on the translucent support 101 itself.

透光性支持体101は、LEDチップなどからの熱の影響をうけた場合、透光性接着剤104との密着性を考慮して熱膨張率の小さい物が好ましい。透光性支持体101の内部表面は、エンボス加工させて接着面積を増やしたり、プラズマ処理して透光性接着剤104との密着性を向上させることもできる。   When the translucent support 101 is affected by heat from an LED chip or the like, a material having a small coefficient of thermal expansion is preferable in consideration of the adhesion to the translucent adhesive 104. The inner surface of the translucent support 101 may be embossed to increase the bonding area, or may be plasma-treated to improve the adhesion with the translucent adhesive 104.

このような透光性支持体101としてポリカーボネート樹脂、ポリフェニレンサルファイド(PPS)、液晶ポリマー(LCP)、ABS樹脂、エポキシ樹脂、フェノール樹脂、アクリル樹脂、イミド樹脂、PBT樹脂等の樹脂を用いることができる。   As such a translucent support 101, a resin such as a polycarbonate resin, a polyphenylene sulfide (PPS), a liquid crystal polymer (LCP), an ABS resin, an epoxy resin, a phenol resin, an acrylic resin, an imide resin, and a PBT resin can be used. .

本願発明の透光性支持体101を形成させる方法は、種々の方法を用いることができるがトランスファー成形や圧縮成形などによって好適に形成させることができる。   Various methods can be used for forming the translucent support 101 of the present invention, but it can be suitably formed by transfer molding or compression molding.

トランスファー成形は、熱硬化性プラスチック材料の成型法の一種である。材料をポット内で余熱軟化しこれをプランジャーによってオリフィスを通して密閉、加熱した金型に比較的高い成形圧で押し込む。プラスチック材料を金型内で熱硬化させ形成させる。そのため均一な硬化、寸法が正確であり本願発明の透光性支持体の一部をレンズに成形などした場合に好適に用いることができる。   Transfer molding is a type of molding method for thermosetting plastic materials. The material is preheated and softened in a pot, which is pressed by a plunger through an orifice into a sealed and heated mold at a relatively high molding pressure. The plastic material is thermoset in a mold to form. Therefore, uniform curing and accurate dimensions are possible, and it can be suitably used when a part of the translucent support of the present invention is formed into a lens.

一方、圧縮成形は成形材料を金型中に仕込み金型を加熱プレスにより加圧し熱と圧力によって可塑性流動を起こさせ成形材料をキャビティ内に均一に充填させることによって所望形状の透光性支持体を形成させることができる。   On the other hand, in the compression molding, a molding material is charged into a mold, the mold is pressurized by a hot press, plastic flow is caused by heat and pressure, and the molding material is uniformly filled in the cavity, so that a transparent support having a desired shape is formed. Can be formed.

なお、本願発明において透光性とは、LEDチップからの発光波長の少なくとも一部或いはLEDチップからの光を利用した発光波長が実質的に透過できることをいう。また、LEDチップからの発光波長の少なくとも一部に対して透光性を有するとは、LEDチップから照射された光が実質的に全て透光性支持体を透過する場合はもちろん、透光性支持体に着色部材を含有させるなどLEDチップから放出された光に対してフィルター効果を持たせた場合を含むことを意味する。LEDチップからの光を利用した発光波長に対して透光性を有するとは、透光性支持体や透光性接着剤などに蛍光物質を含有させLEDチップから放出され蛍光物質で波長変換させた光が透光性支持体を透過する場合を含むことをも意味する。   In the present invention, translucency means that at least a part of the emission wavelength from the LED chip or the emission wavelength using light from the LED chip can be substantially transmitted. In addition, having translucency with respect to at least a part of the emission wavelength from the LED chip means that substantially all of the light emitted from the LED chip transmits through the translucent support, This includes the case where a filter effect is provided for light emitted from the LED chip, such as when the support contains a coloring member. Having translucency with respect to the emission wavelength using light from the LED chip means that a phosphor is contained in a translucent support or a translucent adhesive and the wavelength is converted by the phosphor emitted from the LED chip. This also includes the case where the transmitted light passes through the translucent support.

(発光素子102、202、302、402)
本願発明に用いられる発光素子であるLEDチップ102としては、液相成長法、MBE(分子線ビーム気相成長法)やMOVPE(有機金属気相成長法)等により基板上にGaAlN、ZnS、ZnSe、SiC、GaP、GaAlAs、AlInGaP、InGaN、GaN、AlN、InN、AlInGaN等の半導体を発光層として形成させたLEDチップが好適に用いられる。半導体の構造としては、MIS接合、PIN接合やPN接合を有したホモ構造、ヘテロ構造あるいはダブルへテロ構成のものなどが挙げられる。半導体発光層の材料やその混晶度によって発光波長を紫外光から赤外光まで種々選択することができる。さらに、量子効果を持たせるため発光層を単一量子井戸構造、多重量子井戸構造とさせても良い。
(Light-emitting elements 102, 202, 302, 402)
The LED chip 102 which is a light emitting element used in the present invention includes GaAlN, ZnS, ZnSe on a substrate by liquid phase epitaxy, MBE (molecular beam vapor phase epitaxy), MOVPE (metal organic chemical vapor phase epitaxy) or the like. An LED chip in which a semiconductor such as SiC, GaP, GaAlAs, AlInGaP, InGaN, GaN, AlN, InN, and AlInGaN is formed as a light emitting layer is preferably used. Examples of the semiconductor structure include a homostructure having a MIS junction, a PIN junction, and a PN junction, a heterostructure, and a double heterostructure. The emission wavelength can be variously selected from ultraviolet light to infrared light depending on the material of the semiconductor light emitting layer and the degree of mixed crystal thereof. Further, the light emitting layer may have a single quantum well structure or a multiple quantum well structure to have a quantum effect.

一般にLEDチップは、半導体基板上に設けられた発光層に電流を供給するため半導体を介して対向する面側に正極及び負極の電極を形成させる。このようなLEDチップを本願発明に利用する場合、一方のみを導電性ワイヤーによって電気的に接続させることができる。他方は、透光性支持体201に設けられた透光性の電極205上に透光性接着剤204を介して設置させる必要がある。また、窒化ガリウム系化合物半導体など結晶の質を向上させるなどためにアルミナ、サファイアなどの絶縁性基板上に半導体層を形成させた場合は、同一面側に正極及び負極の電極を形成させ電気的導通をとることとなる。したがって、導電性ワイヤーが少なくとも2本以上必要となるため特に本願発明の効果が顕著にあらわれることとなる。   In general, an LED chip has a positive electrode and a negative electrode formed on a surface facing each other via a semiconductor in order to supply current to a light emitting layer provided on a semiconductor substrate. When such an LED chip is used in the present invention, only one of them can be electrically connected by a conductive wire. On the other hand, it is necessary to install the light-transmitting electrode 205 on the light-transmitting support 201 via a light-transmitting adhesive 204. When a semiconductor layer is formed on an insulating substrate such as alumina or sapphire to improve the quality of a crystal such as a gallium nitride-based compound semiconductor, a positive electrode and a negative electrode are formed on the same surface side, and electrical The conduction is established. Therefore, since at least two or more conductive wires are required, the effect of the present invention is particularly remarkable.

半導体に形成される電極は真空蒸着法や熱、光、放電エネルギーなどを利用した各種CVD法やスパッタリング法を用いて所望に形成させることができる。電極が形成された半導体ウエハーをダイヤモンド製の刃先を有するブレードが回転するダイシングソーにより直接フルカットするか、又は刃先幅よりも広い幅の溝を切り込んだ後(ハーフカット)、外力によって半導体ウエハーを割る。あるいは、先端のダイヤモンド針が往復直線運動するスクライバーにより半導体ウエハーに極めて細いスクライブライン(経線)を例えば碁盤目状に引いた後、外力によってウエハーを割り半導体ウエハーからチップ状にカットさせるなどしてLEDチップ102を形成させることができる。   The electrode formed on the semiconductor can be formed as desired by a vacuum evaporation method, various CVD methods utilizing heat, light, discharge energy, or the like, or a sputtering method. The semiconductor wafer on which the electrodes are formed is directly full-cut by a dicing saw in which a blade having a diamond blade is rotated, or a groove having a width larger than the blade width is cut (half cut), and the semiconductor wafer is cut by an external force. Divide. Alternatively, an extremely thin scribe line (meridian) is drawn on a semiconductor wafer, for example, in a grid pattern by a scriber in which a diamond needle at the tip reciprocates linearly, and then the wafer is cut by an external force to cut the semiconductor wafer into chips. A chip 102 can be formed.

(導電性ワイヤー103、203、303、403)
導電性ワイヤー103としては、LEDチップ102の電極及び外部電極105とのオーミック性、機械的接続性、電気伝導性及び熱伝導性がよいものが求められる。熱伝導度としては0.01cal/cm2/cm/℃以上が好ましく、より好ましくは0.5cal/cm2/cm/℃以上である。また、作業性などを考慮して導電性ワイヤー103の直径は、好ましくは、Φ10μm以上、Φ45μm以下である。このような導電性ワイヤー103として具体的には、金、銅、白金、アルミニウム等の金属及びそれらの合金を用いたものが好適に挙げられる。このような導電性ワイヤー103は、各LEDチップ102の電極と、外部電極105と、をワイヤーボンディング機器によって容易に接続させることができる。
(Conductive wires 103, 203, 303, 403)
The conductive wires 103 are required to have good ohmic properties, mechanical connectivity, electrical conductivity, and thermal conductivity with the electrodes of the LED chip 102 and the external electrodes 105. The thermal conductivity is preferably at least 0.01 cal / cm 2 / cm / ° C., more preferably at least 0.5 cal / cm 2 / cm / ° C. The diameter of the conductive wire 103 is preferably Φ10 μm or more and Φ45 μm or less in consideration of workability and the like. Specific examples of such a conductive wire 103 preferably include those using metals such as gold, copper, platinum, and aluminum and alloys thereof. Such a conductive wire 103 can easily connect the electrode of each LED chip 102 and the external electrode 105 with a wire bonding device.

(透光性接着剤104、204、304、404)
本願発明に用いられる透光性接着剤104とは、透光性支持体101と発光素子であるLEDチップ102とを固定すると共にLEDチップ102からの発光波長の少なくとも一部或いはLEDチップ102からの光を利用した発光波長に対して実質的に透光性を有するものである。したがって、透光性支持体101或いは外部電極205と密着性が良く所望の光の透過率が高いことが求められる。
(Translucent adhesive 104, 204, 304, 404)
The translucent adhesive 104 used in the present invention fixes the translucent support 101 and the LED chip 102 which is a light emitting element, and at least a part of the emission wavelength from the LED chip 102 or the light from the LED chip 102. It has substantially translucency with respect to an emission wavelength using light. Therefore, it is required that the transparent substrate 101 or the external electrode 205 has good adhesion and high transmittance of desired light.

また、半導体を介して電極が対向して配置されたLEDチップにおいては、電極を介して光を放出させる必要がある。そのため、透光性支持体201上に設けられた外部電極205の少なくとも一部をSnO2、In23、ZnOやITOなどの透光性金属酸化物や金属薄膜とさせる。外部電極205上に積置されたLEDチップ202の電極を、透光性を有する電気伝導性部材を含有させた透光性接着剤204により固定と共に電気的接続を行うこともできる。 In an LED chip in which electrodes are arranged to face each other via a semiconductor, it is necessary to emit light through the electrodes. Therefore, at least a part of the external electrode 205 provided on the light-transmitting support 201 is formed of a light-transmitting metal oxide such as SnO 2 , In 2 O 3 , ZnO, or ITO, or a metal thin film. The electrodes of the LED chip 202 mounted on the external electrodes 205 can be fixed and electrically connected together with a light-transmitting adhesive 204 containing a light-transmitting electrically conductive member.

さらに、透光性接着剤は、発光素子からの放熱をパッケージ電極へと伝導させるために熱伝導性がよいことが好ましい。熱伝導性を高めると共にLEDチップの一方の電極を透光性接着剤を介して電気的に接続させても良い。このような透光性接着剤としては、透光性導電性部材を含有させた樹脂バインダーが好ましい。上記要件を満たす具体的な導電性部材としてSnO2、In23、ZnOやITOなどが挙げられる。また、バインダーとしてエポキシ樹脂など種々のものが挙げられる。透光性接着剤104中には蛍光物質及び/又は着色物質を含有させることもできる。蛍光物質を含有させることにより蛍光物質からの光又は蛍光物質とLEDチップからの光を所望に応じて発光させることができる。また、着色染料や着色顔料などの着色物質を含有させることによってLEDチップからの発光波長を所望に調節させるフィルター効果を持たせることもできる。 Further, it is preferable that the translucent adhesive has good thermal conductivity in order to conduct heat radiation from the light emitting element to the package electrode. The heat conductivity may be increased and one electrode of the LED chip may be electrically connected via a translucent adhesive. As such a translucent adhesive, a resin binder containing a translucent conductive member is preferable. Specific conductive members satisfying the above requirements include SnO 2 , In 2 O 3 , ZnO and ITO. In addition, various binders such as an epoxy resin may be used as the binder. The light-transmitting adhesive 104 may contain a fluorescent substance and / or a coloring substance. By including a fluorescent substance, light from the fluorescent substance or light from the fluorescent substance and the LED chip can be emitted as desired. Further, by containing a coloring substance such as a coloring dye or a coloring pigment, it is possible to have a filter effect of adjusting the emission wavelength from the LED chip as desired.

また、透光性支持体101の凹部形状を凸レンズや凹レンズ形状とさせると共に透光性支持体101とは屈折率の異なる透光性接着剤104を注入させることにより所望の光学特性を持たせることもできる。このような透光性接着剤104として具体的にはエポシキ樹脂、シリコン樹脂や水ガラスなど種々のものが挙げられる。   The concave shape of the translucent support 101 is made to be a convex lens or a concave lens shape, and desired optical characteristics are obtained by injecting a translucent adhesive 104 having a different refractive index from the translucent support 101. You can also. Specific examples of such a translucent adhesive 104 include various materials such as epoxy resin, silicone resin, and water glass.

(外部電極105、205、305、405)
本願発明に用いられる外部電極105とは、透光性支持体101に設けられたLEDチップ102に外部から電力を供給させるために用いられるためのものである。外部電極105は、電気伝導性、放熱性や発光素子などの特性などから種々の大きさや形状に形成させることができる。外部電極105は、金属板を透光性支持体101内に挿入させたものでも良いし、透光性支持体101上に種々の方法で形成させたものでも良い。
(External electrodes 105, 205, 305, 405)
The external electrode 105 used in the present invention is to be used to supply power from the outside to the LED chip 102 provided on the translucent support 101. The external electrode 105 can be formed in various sizes and shapes from the viewpoint of electrical conductivity, heat dissipation, characteristics of a light emitting element, and the like. The external electrode 105 may be a metal plate inserted into the translucent support 101 or may be formed on the translucent support 101 by various methods.

外部電極105は、透光性支持体101の形成時に金属板を入れることにより一体形成させることができる。また、透光性支持体301形成後に金属を蒸着、メッキやスパッタリングにより形成させることもできる。また、SnO2、In23、ZnOやITOなどの透光性金属酸化物などを外部電極105として利用することもできる。 The external electrode 105 can be integrally formed by inserting a metal plate when forming the translucent support 101. Further, after the light-transmitting support 301 is formed, a metal can be formed by vapor deposition, plating, or sputtering. Alternatively, a light-transmitting metal oxide such as SnO 2 , In 2 O 3 , ZnO, or ITO can be used as the external electrode 105.

また、透光性支持体301上に複数のLEDチップ302を配置する場合は、LEDチップから放出された熱を外部に放熱させるため熱伝導性がよいことが好ましい。また、外部電極105の一部を利用して反射部材を形成させることにより光利用効率を高めることもできる。この場合、透光性支持体101上に設けられた外部電極105は、LEDチップが放出した光に対して反射率が高いことが好ましい。このような外部電極105としては、銅や青銅板表面に銀或いは金などの貴金属メッキを施したものが好適に用いられる。   In the case where a plurality of LED chips 302 are arranged on the translucent support 301, it is preferable that the LED chips 302 have good thermal conductivity in order to radiate heat emitted from the LED chips to the outside. Further, by using a part of the external electrode 105 to form a reflection member, the light use efficiency can be improved. In this case, it is preferable that the external electrode 105 provided on the translucent support 101 has a high reflectance with respect to light emitted from the LED chip. As such an external electrode 105, a copper or bronze plate whose surface is plated with a noble metal such as silver or gold is preferably used.

(保護部材106、406)
本願発明に用いられる保護部材106は、発光素子であるLEDチップ102やその電気的接続のための導電性ワイヤー103等を外部力、塵芥や水分などから保護するために設けられることが好ましい。したがって、保護部材106とLEDチップ102などとが密着して形成されていてもよいし、放熱性や応力緩和のため発光素子などと密着していなくとも良い。保護部材106とLEDチップ102や導電性ワイヤー103などが密着している場合は、導電性ワイヤーが内部応力などによって断線などしないように弾力性のある樹脂を用いることが望ましい。また、弾力性の少ない樹脂を用いる場合は薄く形成させることが望ましい。保護部材106としての具体的材料は、エポキシ樹脂、ユリア樹脂、シリコン樹脂、フッ素樹脂、ポリカーボネート樹脂などの耐候性に優れた樹脂が好適に用いられる。このような保護部材106は、LEDチップ102などを被覆するように透光性支持体の凹部にノズルから樹脂を注入させることなどによって簡単に形成させることができる。
(Protection members 106 and 406)
The protection member 106 used in the present invention is preferably provided to protect the LED chip 102 as a light emitting element, the conductive wire 103 for electrical connection thereof, and the like from external force, dust, moisture, and the like. Therefore, the protection member 106 and the LED chip 102 and the like may be formed in close contact with each other, or may not be in close contact with the light emitting element and the like for heat dissipation and stress relaxation. When the protection member 106 is in close contact with the LED chip 102, the conductive wire 103, or the like, it is preferable to use an elastic resin so that the conductive wire does not break due to internal stress or the like. Further, when a resin having low elasticity is used, it is desirable to form the resin thinly. As a specific material for the protective member 106, a resin having excellent weather resistance such as an epoxy resin, a urea resin, a silicon resin, a fluorine resin, and a polycarbonate resin is suitably used. Such a protective member 106 can be easily formed by injecting a resin from a nozzle into a concave portion of the translucent support so as to cover the LED chip 102 and the like.

(反射部材107、407)
反射部材107とは、LEDチップ102から放出された光などを効率よく透光性支持体側に向かわせるために設けることが好ましい。反射部材107は、保護部材106上に形成させることもできるし、反射部材と保護部材とを兼用構造とさせることもできる。さらに、反射部材107のみを形成させることもできる。反射部材107は樹脂やガラス中などに酸化チタン、チタン酸バリウムなどの高反射率を有する部材を含有させることにより形成させることができる。また、金属を保護部材上に設け反射部材とさせても良い。
(Reflecting members 107 and 407)
The reflecting member 107 is preferably provided to efficiently direct light emitted from the LED chip 102 toward the light-transmitting support. The reflection member 107 can be formed on the protection member 106, or can have a structure that serves both as the reflection member and the protection member. Further, only the reflection member 107 can be formed. The reflecting member 107 can be formed by including a member having high reflectance, such as titanium oxide or barium titanate, in a resin or glass. Further, a metal may be provided on the protection member to serve as a reflection member.

反射部材107に用いられる材料は保護部材106と同じ部材としてもよい。また、反射部材107に用いられると、保護部材106に用いられる材料と、を応力、放熱性や屈折率の異なる部材などで形成させてもよい。   The material used for the reflection member 107 may be the same member as the protection member 106. In addition, when used for the reflective member 107, the material used for the protective member 106 may be formed of a member having different stress, heat dissipation, and refractive index.

(バックライト)
本願発明を用いて図2の如く液晶装置などに利用できるバックライト光源を構成することができる。図2には、本願発明の透光性支持体201をバックライト光源の導光板などと兼用することができるものを記載してある。ポリカーボネートで作成した導光板の主面及びLEDチップ202が積置された端面を除いて反射層210を形成させた。このような反射層210は、酸化チタンが含有されたエポキシ樹脂板などを張り合わせてある。反射層210を設けることによって、LEDチップ202から放出された光を効率よく導光板の主面から放出させることができる。
(Backlight)
A backlight light source that can be used for a liquid crystal device or the like as shown in FIG. 2 can be configured by using the present invention. FIG. 2 shows a structure in which the translucent support 201 of the present invention can be used also as a light guide plate of a backlight light source. The reflection layer 210 was formed except for the main surface of the light guide plate made of polycarbonate and the end surface on which the LED chips 202 were mounted. Such a reflective layer 210 is attached with an epoxy resin plate or the like containing titanium oxide. By providing the reflective layer 210, the light emitted from the LED chip 202 can be efficiently emitted from the main surface of the light guide plate.

ここで、発光素子としてSiC基板上に窒化ガリウム系化合物半導体を形成させたLEDチップ202を用いた。LEDチップ202はSiC基板面側及び半導体発光層を介してSiC基板に対向する半導体面側にはそれぞれスパッタリング法によりアルミニウムの正極及び負極の電極を形成させてある。SiC基板面側に設けられた電極は発光層で発光した光が透過できるよう薄く形成させてある。   Here, an LED chip 202 having a gallium nitride-based compound semiconductor formed on a SiC substrate was used as a light emitting element. The LED chip 202 has aluminum positive and negative electrodes formed on the SiC substrate surface side and the semiconductor surface side facing the SiC substrate via the semiconductor light emitting layer by a sputtering method, respectively. The electrode provided on the SiC substrate side is formed thin so that light emitted from the light emitting layer can be transmitted.

導光板のLEDチップ202が積置される端面には外部電極205として透光性を有するITOとその上に形成されたAl膜をそれぞれ所望の形状にスッパタリング法により形成させてある。LEDチップ202の電極が形成されたSiC基板面側と、少なくともLEDチップ下が透光性を有する外部電極205と、をSnO2が含有された透光性接着剤204で固着すると共に電気的に導通をとる。これによりLEDチップ202が積置された部位以外の外部電極205は、ITO上にAlを積層してあり反射層として働くと共に導電性を向上させることができる。LEDチップ202の半導体面側に設けられた他方の電極は、導電性ワイヤー203を用いて導光板に設けられた別の外部電極とワイヤーボンディングしてある。こうして形成されたバックライト上に不示図の液晶装置を配置することによって液晶表示装置を形成させることができる。 On the end surface of the light guide plate on which the LED chips 202 are mounted, ITO having translucency as an external electrode 205 and an Al film formed thereon are formed in a desired shape by a sputtering method. The SiC substrate surface side on which the electrodes of the LED chip 202 are formed and the external electrode 205 having a light-transmitting property at least under the LED chip are fixed with a light-transmitting adhesive 204 containing SnO 2 and electrically. Conduct continuity. As a result, the external electrodes 205 other than the portion where the LED chip 202 is mounted are formed by stacking Al on ITO, functioning as a reflective layer, and improving the conductivity. The other electrode provided on the semiconductor surface side of the LED chip 202 is wire-bonded to another external electrode provided on the light guide plate using a conductive wire 203. A liquid crystal display device can be formed by disposing a liquid crystal device (not shown) on the backlight thus formed.

(書き込み/読み込み光源)
本願発明を用いて図3及び図4の如く光プリンターヘッドやイメージスキャナーの光源などを構成することができる。本願発明の発光装置を図3の如き光プリンターヘッドなどの書き込み光源用に利用したものを示す。透光性支持体301としては、長尺のガラスを用いた。LEDチップ302にはサファイア基板上に窒化ガリウム系化合物半導体を形成させたものを用いてある。LEDチップ302上には半導体の同一平面側にP型電極及びN型電極が形成されている。ガラス上に遮光部材310としてCu膜を蒸着により形成させた。遮光部材310には、少なくとも一箇所の開口部が設けられておりアパーチャーとしての役割を果たす。また、透光性支持体301を介して遮光部材310が設けられた面と対向する面側には外部電極305としてCuの導電性パターンが形成されてある。
(Write / read light source)
The light source of an optical printer head, an image scanner, and the like can be configured as shown in FIGS. 3 and 4 using the present invention. FIG. 4 shows a light-emitting device of the present invention which is used for a writing light source such as an optical printer head as shown in FIG. As the translucent support 301, long glass was used. As the LED chip 302, a gallium nitride-based compound semiconductor formed on a sapphire substrate is used. On the LED chip 302, a P-type electrode and an N-type electrode are formed on the same plane side of the semiconductor. A Cu film was formed as a light shielding member 310 on glass by vapor deposition. The light-blocking member 310 is provided with at least one opening, and functions as an aperture. Further, a conductive pattern of Cu is formed as an external electrode 305 on the surface side opposite to the surface on which the light shielding member 310 is provided via the light transmitting support 301.

LEDチップ302のサファイア基板は、透光性支持体301の外部電極305が設けられた面側に透光性接着剤304であるエポキシ樹脂を用いて接着させた。図3では、透光性支持体301上に2個のLEDチップ302が配置されており、一方のLEDチップ302のP型半導体に設けられた電極と、外部電極と、をAuワイヤー303を用いてワイヤーボンディングにより接続されている。同様に、他方の隣接するLEDチップのN型半導体に設けられた電極と、別の外部電極と、をそれぞれワイヤーボンディングしてある。   The sapphire substrate of the LED chip 302 was bonded to the surface of the translucent support 301 on which the external electrodes 305 were provided, using an epoxy resin as a translucent adhesive 304. In FIG. 3, two LED chips 302 are arranged on a light-transmitting support 301, and an electrode provided on a P-type semiconductor of one LED chip 302 and an external electrode are formed using Au wires 303. Connected by wire bonding. Similarly, an electrode provided on the N-type semiconductor of the other adjacent LED chip is wire-bonded to another external electrode.

LEDチップ302間は、直列接続させるために一方のLEDチップのN型半導体上に設けられた電極と、他方のLEDチップのP型半導体上に設けられた電極と、を直接ワイヤーボンディングし直列接続とさせてある。こうして直列接続されたLEDチップに電力を供給させるとLEDチップ302から透光性接着剤304、アパーチャーが設けられた透光性支持体301を介して点発光される。これにより光取り出し部と、ワイヤーが重なり陰になることもなくなり、また、感光紙などに密着露光させることもできる。   Between the LED chips 302, an electrode provided on the N-type semiconductor of one LED chip and an electrode provided on the P-type semiconductor of the other LED chip are connected in series by direct wire bonding in order to connect them in series. It has been made. When power is supplied to the LED chips connected in series in this manner, point emission is performed from the LED chip 302 via the light-transmitting adhesive 304 and the light-transmitting support 301 provided with the aperture. As a result, the light extraction portion and the wire do not overlap each other, and the wire is not shaded, and the photosensitive paper or the like can be exposed in close contact.

また、本願発明の発光装置を図4の如きフルカラー光プリンターヘッドとして利用する場合、RGB各発光波長を同一の窒化ガリウム系化合物半導体などを利用したLEDチップ402によってそれぞれ形成させることができる。即ち、窒化ガリウム系化合物半導体の組成を代えることによって、青色系及び緑色系がそれぞれ発光可能なLEDチップを形成する。レンズが形成されRGBごとに光学的に分離された透光性支持体401の凹部にエポキシ樹脂などの透光性接着剤404によってLEDチップ402を固定させてある。赤色系発光部に相当する透光性支持体の凹部には、LEDチップからの光によって励起され赤色系が発光可能な蛍光物質をエポキシ樹脂中に含有させた透光性接着剤411を用いてLEDチップのサファイヤ基板側で接着させてある。透光性支持体401の裏面側には、各LEDチップを駆動させるための外部電極405が形成されている。各外部電極405とLEDチップの電極とは、導電性ワイヤー403である金線などでワイヤーボンドさせてある。同様に、青色系及び緑色系は透光性接着剤に蛍光物質を含有させない以外は同様に構成してある。LEDチップ上の背面側には使用状況に応じて保護部材406としての封止樹脂やリフレクターである反射部材407を設けてもよい。   When the light emitting device of the present invention is used as a full-color optical printer head as shown in FIG. 4, each of the RGB emission wavelengths can be formed by an LED chip 402 using the same gallium nitride compound semiconductor or the like. That is, by changing the composition of the gallium nitride-based compound semiconductor, an LED chip capable of emitting blue light and green light can be formed. An LED chip 402 is fixed to a concave portion of a light-transmitting support body 401 in which a lens is formed and which is optically separated for each of RGB by a light-transmitting adhesive 404 such as an epoxy resin. In the concave portion of the translucent support corresponding to the red light emitting portion, a translucent adhesive 411 containing a fluorescent substance which is excited by light from the LED chip and emits red light in an epoxy resin is used. The LED chip is bonded on the sapphire substrate side. External electrodes 405 for driving each LED chip are formed on the rear surface side of the translucent support 401. Each external electrode 405 and the electrode of the LED chip are wire-bonded with a conductive wire 403 such as a gold wire. Similarly, the blue type and the green type have the same configuration except that the fluorescent material is not contained in the translucent adhesive. A sealing resin as a protection member 406 or a reflection member 407 which is a reflector may be provided on the rear surface side of the LED chip according to a use situation.

透光性支持体の凹部中に蛍光物質が含有された樹脂などの透光性接着剤411を含有させることによって、接着剤量や厚み等を制御することができるため歩留まりが向上するという利点がある。特に、蛍光物質を含有させたときは含有量、分布厚みなどを凹部形状などによって制御しやすい。   By including the light-transmitting adhesive 411 such as a resin containing a fluorescent substance in the concave portion of the light-transmitting support, the amount and thickness of the adhesive can be controlled, so that the yield is improved. is there. In particular, when a fluorescent substance is contained, the content, the distribution thickness, and the like can be easily controlled by the shape of the concave portion.

また、赤色系が発光可能な蛍光物質として具体的にはaMgO・bLi2O・Sb23:cMn、eMgO・fTiO2:gMn、pMgO・qMgF2・GeO2:rMnなどが好適に挙げられる(但し、2≦a≦6、2≦b≦4、0.001≦c≦0.05、1≦e≦3、1≦f≦2、0.001≦g≦0.05、2.5≦p≦4.0、0≦q≦1、0.003≦r≦0.05である。)。このような蛍光物質に加えてセリウム付活イットリウム・アルミニウム・ガーネットなどの他の蛍光物質を混合させることもできる。また他の色は、セリウム付活イットリウム・アルミニウム・ガーネットである(RE1-xSmx3(Al1-yGay512:Ce蛍光物質(但し、0≦x<1、0≦y≦1、REは、Y、Gd、Laからなる群から選択される少なくとも一種の元素である。)など他の蛍光物質のみで構成させることもできる。 Furthermore, specific examples of the fluorescent substance capable of emitting light is red aMgO · bLi 2 O · Sb 2 O 3: cMn, eMgO · fTiO 2: gMn, pMgO · qMgF 2 · GeO 2: rMn and the like suitably (However, 2 ≦ a ≦ 6, 2 ≦ b ≦ 4, 0.001 ≦ c ≦ 0.05, 1 ≦ e ≦ 3, 1 ≦ f ≦ 2, 0.001 ≦ g ≦ 0.05, 2.5 ≦ p ≦ 4.0, 0 ≦ q ≦ 1, 0.003 ≦ r ≦ 0.05.) In addition to such a fluorescent substance, other fluorescent substances such as cerium-activated yttrium / aluminum / garnet can also be mixed. The other colors are cerium-activated yttrium aluminum garnet (RE 1-x Sm x) 3 (Al 1-y Ga y) 5 O 12: Ce phosphor (where, 0 ≦ x <1, 0 .Ltoreq.y.ltoreq.1, RE is at least one element selected from the group consisting of Y, Gd, and La.).

また、センサー用光源として利用する場合は、RGBを光学的に分離することなくRGBに相当する各LEDチップを近接し白色系が発光可能なように配置することができる。各LEDチップから放出された光は、文字、写真や図などが記載された紙などの媒体に照射される。媒体で反射された光をそれぞれRGBに対応したカラフィルターを介して単結晶や非単結晶シリコンなどで構成された光センサー中に入るよう光学的に構成させてある。長尺光センサーなどに入射された光はRGBそれぞれの光に対応した電気信号として読みとることができる。   When used as a sensor light source, each LED chip corresponding to RGB can be arranged close to and capable of emitting white light without optically separating RGB. Light emitted from each LED chip is applied to a medium such as paper on which characters, photographs, figures, and the like are described. The light reflected by the medium is optically configured to enter a light sensor made of single crystal, non-single-crystal silicon, or the like through color filters corresponding to RGB. Light incident on a long light sensor or the like can be read as an electric signal corresponding to each of RGB light.

読み込み光源であるセンサー用光源などは、光源自身を発光させていなくとも待機時間中に生ずる予熱などにより光源の温度が昇温する場合がある。各LEDチップを構成する半導体が異なった材質から形成させていると、発光出力や発光波長などの温度特性が異なる。そのため一定温度時に白色光に調整させたとしても、温度変化によって色調がずれ正確な情報を読みとることができない場合がある。同一系材料を用いた半導体発光素子を利用して多色発光させることもできるために温度依存性が極めて少ない発光装置とすることができる利点がある。以下、本願発明の具体的実施例について詳述するが本願発明はこの具体的実施例のみに限定されるものでないことは言うまでもない。   Even if the light source for a sensor, which is a reading light source, does not emit light, the temperature of the light source may rise due to preheating that occurs during the standby time. If the semiconductor constituting each LED chip is formed from a different material, temperature characteristics such as light emission output and light emission wavelength will be different. For this reason, even when white light is adjusted at a constant temperature, the color tone may shift due to a temperature change, and accurate information may not be read. Since multicolor light emission can be performed using a semiconductor light emitting element using the same material, there is an advantage that a light emitting device having extremely low temperature dependence can be obtained. Hereinafter, specific embodiments of the present invention will be described in detail, but it goes without saying that the present invention is not limited to only the specific embodiments.

(実施例1)
発光装置としてチップタイプLEDを形成させた。チップタイプLEDには発光ピークが450nmのIn0.05Ga0.95N半導体を利用したLEDチップを用いた。LEDチップは、洗浄させたサファイヤ基板上にTMG(トリメチルガリウム)ガス、TMI(トリメチルインジュウム)ガス、窒素ガス及びドーパントガスをキャリアガスと共に流し、MOCVD法で窒化ガリウム系化合物半導体を成膜させることにより形成させた。
(Example 1)
A chip type LED was formed as a light emitting device. As the chip type LED, an LED chip using an In 0.05 Ga 0.95 N semiconductor having an emission peak of 450 nm was used. For the LED chip, a TMG (trimethyl gallium) gas, a TMI (trimethyl indium) gas, a nitrogen gas and a dopant gas are flowed together with a carrier gas on a cleaned sapphire substrate, and a gallium nitride-based compound semiconductor is formed by MOCVD. Formed.

ドーパントガスとしてSiH4とCp2Mgと、を切り替えることによって所望の導電型を形成させてある。N型導電性を有する窒化ガリウム半導体であるコンタクト層、クラッド層と、P型導電性を有する窒化ガリウム半導体であるクラッド層、コンタクト層との間にInGaNの活性層を形成しPN接合を形成させた。(なお、サファイヤ基板上には低温で窒化ガリウム半導体を形成させバッファ層とさせてある。また、P型半導体は、成膜後400℃以上でアニールさせてある。) A desired conductivity type is formed by switching between SiH 4 and Cp 2 Mg as the dopant gas. An active layer of InGaN is formed between the contact layer and the cladding layer, which is a gallium nitride semiconductor having N-type conductivity, and the cladding layer, which is a gallium nitride semiconductor having P-type conductivity, to form a PN junction. Was. (A gallium nitride semiconductor is formed at a low temperature on a sapphire substrate to serve as a buffer layer. The P-type semiconductor is annealed at 400 ° C. or higher after film formation.)

エッチングによりPN各半導体表面を露出させた後、スパッタリングにより各電極をそれぞれ形成させた。こうして出来上がった半導体ウエハーをスクライブラインを引いた後、外力により分割させ発光素子としてLEDチップを形成させた。   After exposing the surface of each PN semiconductor by etching, each electrode was formed by sputtering. After a scribe line was drawn on the semiconductor wafer thus completed, the wafer was divided by an external force to form an LED chip as a light emitting element.

一方、ポリカーボネートを用いトランスファー成形により図1Aの如くレンズ部を有する透光性支持体を形成させた。形成した透光性支持体には外部電極がインサートされている。この透光性支持体の凹部内にLEDチップのサファイア基板面がレンズ部に向くように光軸を合わせエポキシ樹脂でダイボンディングさせ150℃2時間で硬化させた。その後、透光性支持体の外部電極と、LEDチップの各電極と、をAuワイヤーを用いてそれぞれワイヤーボンディングさせた。透光性支持体の凹部内のLEDチップ、Auワイヤーなどを保護するためにシリコン樹脂で封止し保護部材を形成させた。保護部材上にはチタン酸バリウムを含有させたシリコン樹脂を塗布硬化し反射部材を設けることにより発光装置を形成させた。なお、レンズ部の頂点とLEDチップ表面からの距離dが3mm(指向角60°)、6mm(指向角30°)、9mm(指向角15°)とさせた以外は全く同様の発光装置を100個ずつ形成させた。   On the other hand, a translucent support having a lens portion was formed by transfer molding using polycarbonate as shown in FIG. 1A. External electrodes are inserted into the formed translucent support. The optical axis was aligned so that the sapphire substrate surface of the LED chip faced the lens portion in the concave portion of the translucent support, and was die-bonded with an epoxy resin and cured at 150 ° C. for 2 hours. Thereafter, the external electrodes of the translucent support and the respective electrodes of the LED chip were wire-bonded using Au wires. In order to protect the LED chips, Au wires, and the like in the concave portions of the translucent support, they were sealed with a silicone resin to form a protective member. A light emitting device was formed by applying and curing a silicon resin containing barium titanate on the protective member and providing a reflective member. The same light-emitting device was used except that the distance d between the vertex of the lens portion and the LED chip surface was 3 mm (directivity angle 60 °), 6 mm (directivity angle 30 °), and 9 mm (directivity angle 15 °). Each was formed.

こうして形成された発光装置を100個形成し、平均軸上光度を測定した。また、5min以内に−40℃30min、100℃30minとした熱衝撃を1000サイクル繰り返し気相熱衝撃試験を行った。   100 light-emitting devices thus formed were formed, and the average on-axis luminous intensity was measured. Further, a thermal shock at -40 ° C. for 30 min and 100 ° C. for 30 min was repeated 1,000 cycles within 5 min to conduct a gas phase thermal shock test.

(比較例1)
図5の如く外部電極を延長した上にLEDチップを積置させ電気的接続を行ったものに樹脂を一体成形させ、それ以外は実施例1と同様にしてレンズ部の頂点とLEDチップ表面からの距離dが3mm(指向角60°)、6mm(指向角30°)、9mm(指向角15°)の発光装置をそれぞれ100個ずつ形成させた。実施例1と同様にして平均軸上光度を測定し、実施例1と共に表1に示した。また、気相熱衝撃試験を行い導電性ワイヤーの断線した発光装置の個数を調べ実施例1と共に表2に示した。
(Comparative Example 1)
As shown in FIG. 5, the resin is integrally molded with the external electrode extended and the LED chip mounted thereon and electrically connected, and otherwise the same as in Example 1 from the vertex of the lens portion and the LED chip surface. 100 light emitting devices each having a distance d of 3 mm (directivity angle 60 °), 6 mm (directivity angle 30 °), and 9 mm (directivity angle 15 °) were formed. The average on-axis luminous intensity was measured in the same manner as in Example 1. The results are shown in Table 1 together with Example 1. In addition, a vapor phase thermal shock test was performed to determine the number of light emitting devices in which the conductive wires were broken, and the results are shown in Table 2 together with Example 1.

上述の如く本願発明の構成とすることによって、光取り出し部と導電性ワイヤーを用いた電気的接続部とを別体に形成することができるため発光素子を比較的容易に信頼性を高く形成させることができる。特に、光取り出し部である透光性支持体の形成などに伴う圧力や内部応力による電気的接続部材の断線などを防いだ発光装置とすることができる。また、光取り出し部を気泡の混入などが極めて少なく集光力に優れた発光装置とさせることもできる。   With the configuration of the present invention as described above, the light extraction portion and the electrical connection portion using the conductive wire can be formed separately, so that the light emitting element can be relatively easily formed with high reliability. be able to. In particular, a light-emitting device in which disconnection of an electrical connection member due to pressure or internal stress due to formation of a light-transmitting support serving as a light extraction portion can be prevented. In addition, the light extraction unit can be a light emitting device that is extremely low in the inclusion of air bubbles and has excellent light-gathering power.

本願発明の構成とすることによって、より簡便で信頼性の高い高輝度発光装置とすることができる。   With the structure of the present invention, a simpler and more reliable high-luminance light-emitting device can be obtained.

本願発明の構成とすることによって、外部環境下からの影響を少なくし信頼性を高めると共により光取りだし効率の高い発光素子とすることができる。   With the structure of the present invention, a light-emitting element with reduced influence from an external environment, improved reliability, and higher light extraction efficiency can be obtained.

本願発明の構成とすることによって、LEDチップから放出された光を波長変換させることができる。凹部内に蛍光物質を含有させると共に接着させるため所望の蛍光物質含有量とさせることができ発光波長のバラツキの少ない発光装置とすることができる。特に発光面側に均一に一定量の蛍光物質を含有させることができるため発光面における色むらが少ない発光装置とすることができる。   With the configuration of the present invention, the wavelength of light emitted from the LED chip can be converted. Since the fluorescent substance is contained in the concave portion and adhered thereto, a desired fluorescent substance content can be obtained, and a light emitting device with less variation in emission wavelength can be obtained. In particular, since a certain amount of fluorescent substance can be uniformly contained on the light emitting surface side, a light emitting device with less color unevenness on the light emitting surface can be obtained.

本願発明の構成とすることによって、より小さな点光源とさせることができる。これにより隣接した発光装置の影響を極めて小さくさせた光プリンターヘッドなどに好適に用いることができる。したがって、発光装置を小型化することができると共に導電性ワイヤーによって発光部が導電性ワイヤーによって陰になることがなく光取り出し効率の高い発光装置とすることができる。   With the configuration of the present invention, a smaller point light source can be obtained. Accordingly, the present invention can be suitably used for an optical printer head or the like in which the influence of an adjacent light emitting device is extremely reduced. Therefore, the light emitting device can be reduced in size, and the light emitting portion can be made high in light extraction efficiency without the conductive wire being shaded by the conductive wire.

本願発明の構成とすることによって、より集光力の高い発光装置とすることができる。特に、光取り出し側に相当する透光性支持体にレンズ部を形成させることによって導電性ワイヤーの密着性とは関係なく集光力を向上させることができる。   With the configuration of the present invention, a light-emitting device with higher light-collecting power can be obtained. In particular, by forming the lens portion on the light-transmitting support corresponding to the light extraction side, the light-collecting power can be improved irrespective of the adhesion of the conductive wire.

本願発明の工程とすることによって、容易に信頼性の高く、光取り出し効率の高い小型化可能な発光装置を形成させることができる。   By adopting the process of the present invention, a small-sized light-emitting device with high reliability and high light extraction efficiency can be easily formed.

本発明に係るチップタイプLEDの概略断面図である。1 is a schematic sectional view of a chip type LED according to the present invention. 本発明に係る他のチップタイプLEDの概略断面図である。It is a schematic sectional drawing of other chip type LED which concerns on this invention. 本願発明の発光装置をバックライト光源として構成させた概略断面図である。FIG. 2 is a schematic sectional view in which the light emitting device of the present invention is configured as a backlight light source. 本願発明の発光装置を用いた光プリンターヘッドの模式的断面図である。FIG. 3 is a schematic sectional view of an optical printer head using the light emitting device of the present invention. 本願発明の別の発光装置を用いたフルカラー光プリンターヘッドの模式的断面図である。FIG. 9 is a schematic sectional view of a full-color optical printer head using another light emitting device of the present invention. 本願発明と比較のために示した発光素子の模式的断面図を示す。FIG. 2 shows a schematic cross-sectional view of a light emitting device shown for comparison with the present invention.

符号の説明Explanation of reference numerals

101、201、301、401・・・透光性支持体
102、202、302、402・・・LEDチップ
103、203、303、403・・・導電性ワイヤー
104、204、304、404・・・透光性接着剤
105、205、305、405・・・外部電極
106、406・・・保護部材
107、407・・・反射部材
210・・・反射層
310、410・・・遮光部材
411・・・蛍光物質が含有された透光性接着剤
501・・・レンズ部
502・・・LEDチップ
503・・・導電性ワイヤー
504・・・導電性接着剤
505・・・外部電極
101, 201, 301, 401 ... translucent supports 102, 202, 302, 402 ... LED chips 103, 203, 303, 403 ... conductive wires 104, 204, 304, 404 ... Translucent adhesives 105, 205, 305, 405 ... external electrodes 106, 406 ... protective members 107, 407 ... reflective members 210 ... reflective layers 310, 410 ... light shielding members 411 ... -Translucent adhesive 501 containing a fluorescent substance-Lens part 502-LED chip 503-Conductive wire 504-Conductive adhesive 505-External electrode

Claims (6)

凹部を備えた支持体上に透光性接着剤によって接着されたLEDチップを有する発光装置において、
前記支持体は透光性支持体であって、且つ前記透光性接着剤は蛍光物質を含有してなる発光装置。
In a light emitting device having an LED chip bonded by a translucent adhesive on a support having a concave portion,
The light-emitting device, wherein the support is a light-transmitting support, and the light-transmitting adhesive contains a fluorescent substance.
前記透光性支持体は、前記LEDチップを収納するための第1凹部を有し、その第1凹部の底部に前記凹部を有することを特徴とする請求項1記載の発光装置。   The light emitting device according to claim 1, wherein the translucent support has a first recess for accommodating the LED chip, and has the recess at the bottom of the first recess. 前記透光性支持体に設けられた外部電極と、前記透光性接着剤に接した面と対向する面側に前記LEDチップの電極を有し、前記外部電極と前記電極が導電性ワイヤーによって接続されている請求項1又は2に記載の発光装置。   An external electrode provided on the light-transmitting support, and an electrode of the LED chip on a surface side opposite to a surface in contact with the light-transmitting adhesive, wherein the external electrode and the electrode are formed of a conductive wire. The light emitting device according to claim 1, wherein the light emitting device is connected. 前記LEDチップと前記導電性ワイヤーを保護する保護部材が設けられている請求項3記載の発光装置。   The light emitting device according to claim 3, further comprising a protection member that protects the LED chip and the conductive wire. 前記凹部を複数有する透光性支持体と前記複数の凹部に前記透光性接着剤によってそれぞれ接着される複数の前記LEDチップを有し、前記複数の凹部のうちの少なくとも1つに配された前記透光性接着剤は、蛍光物質が含有されていることを特徴とする請求項1〜4のうちのいずれか1つに記載の発光装置。   A light-transmitting support having a plurality of recesses; and a plurality of the LED chips bonded to the plurality of recesses by the light-transmitting adhesive, respectively, and the plurality of LED chips are disposed in at least one of the plurality of recesses. The light emitting device according to any one of claims 1 to 4, wherein the translucent adhesive contains a fluorescent substance. 前記透光性支持体において、隣接するLEDチップの間には少なくとも1つの遮光部が形成されている請求項5記載の発光装置。
The light emitting device according to claim 5, wherein at least one light shielding portion is formed between adjacent LED chips in the translucent support.
JP2004278872A 2004-09-27 2004-09-27 Light emitting device and method for forming the same Expired - Fee Related JP3852462B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004278872A JP3852462B2 (en) 2004-09-27 2004-09-27 Light emitting device and method for forming the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004278872A JP3852462B2 (en) 2004-09-27 2004-09-27 Light emitting device and method for forming the same

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP31160496A Division JP3992770B2 (en) 1996-11-22 1996-11-22 Light emitting device and method for forming the same

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2004343841A Division JP3852465B2 (en) 2004-11-29 2004-11-29 Light emitting device and method for forming the same
JP2006161363A Division JP2006237652A (en) 2006-06-09 2006-06-09 Translucent adhesive

Publications (2)

Publication Number Publication Date
JP2004363632A true JP2004363632A (en) 2004-12-24
JP3852462B2 JP3852462B2 (en) 2006-11-29

Family

ID=34056597

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004278872A Expired - Fee Related JP3852462B2 (en) 2004-09-27 2004-09-27 Light emitting device and method for forming the same

Country Status (1)

Country Link
JP (1) JP3852462B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006303347A (en) * 2005-04-25 2006-11-02 Kyocera Corp Light-emitting device and wiring board therefor
US8366295B2 (en) 2005-12-16 2013-02-05 Nichia Corporation Light emitting device
KR20130105312A (en) * 2010-05-31 2013-09-25 니치아 카가쿠 고교 가부시키가이샤 Light-emitting device and manufacturing method therefor
US8558446B2 (en) 2005-02-18 2013-10-15 Nichia Corporation Light emitting device provided with lens for controlling light distribution characteristic
CN112874168A (en) * 2021-01-13 2021-06-01 珠海奔图电子有限公司 Agent chip, consumable, and image forming apparatus

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101521260B1 (en) * 2008-11-25 2015-05-18 삼성전자주식회사 Light emitting diode package and manufacturing method thereof

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8836210B2 (en) 2005-02-18 2014-09-16 Nichia Corporation Light emitting device provided with lens for controlling light distribution characteristic
US9093619B2 (en) 2005-02-18 2015-07-28 Nichia Corporation Light emitting device provided with lens for controlling light distribution characteristic
US8558446B2 (en) 2005-02-18 2013-10-15 Nichia Corporation Light emitting device provided with lens for controlling light distribution characteristic
JP4671748B2 (en) * 2005-04-25 2011-04-20 京セラ株式会社 WIRING BOARD FOR LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE
JP2006303347A (en) * 2005-04-25 2006-11-02 Kyocera Corp Light-emitting device and wiring board therefor
US10801676B2 (en) 2005-12-16 2020-10-13 Nichia Corporation Light emitting device
US8366295B2 (en) 2005-12-16 2013-02-05 Nichia Corporation Light emitting device
US9491813B2 (en) 2005-12-16 2016-11-08 Nichia Corporation Light emitting device
US9491812B2 (en) 2005-12-16 2016-11-08 Nichia Corporation Light emitting device
US9752734B2 (en) 2005-12-16 2017-09-05 Nichia Corporation Light emitting device
US11692677B2 (en) 2005-12-16 2023-07-04 Nichia Corporation Light emitting device
US10180213B2 (en) 2005-12-16 2019-01-15 Nichia Corporation Light emitting device
US11421829B2 (en) 2005-12-16 2022-08-23 Nichia Corporation Light emitting device
US10598317B2 (en) 2005-12-16 2020-03-24 Nichia Corporation Light emitting device
US11187385B2 (en) 2005-12-16 2021-11-30 Nichia Corporation Light emitting device
KR20130105312A (en) * 2010-05-31 2013-09-25 니치아 카가쿠 고교 가부시키가이샤 Light-emitting device and manufacturing method therefor
US10658545B2 (en) 2010-05-31 2020-05-19 Nichia Corporation Light emitting device in which light emitting element and light transmissive member are directly bonded
KR101998885B1 (en) * 2010-05-31 2019-07-10 니치아 카가쿠 고교 가부시키가이샤 Light-emitting device and manufacturing method therefor
US10043948B2 (en) 2010-05-31 2018-08-07 Nichia Corporation Light emitting device in which light emitting element and light transmissive member are directly bonded
CN112874168A (en) * 2021-01-13 2021-06-01 珠海奔图电子有限公司 Agent chip, consumable, and image forming apparatus

Also Published As

Publication number Publication date
JP3852462B2 (en) 2006-11-29

Similar Documents

Publication Publication Date Title
JP3992770B2 (en) Light emitting device and method for forming the same
KR101997243B1 (en) Light emtting device and lighting system
KR100985452B1 (en) Light emitting device
US20190088824A1 (en) Light emitting package having phosphor layer over a transparent resin layer
JP6765804B2 (en) Light emitting element package
JP2003332634A (en) Semiconductor device and its manufacturing method
US11081626B2 (en) Light emitting diode packages
KR101813495B1 (en) Light Emitting Diode Package
EP2711994A2 (en) Light emitting diode
CN104396035A (en) Phosphor separated from LED by transparent spacer
EP2725630B1 (en) Light emitting device
JP3852465B2 (en) Light emitting device and method for forming the same
US11342486B2 (en) Light-emitting device package and lighting device having same
JP2000164939A (en) Light emitting device
KR101891620B1 (en) Light emitting device package and light unit having the same
JP3852462B2 (en) Light emitting device and method for forming the same
KR101916148B1 (en) Light emitting device, manufactured method of the light emitting device and lighting system
KR101873585B1 (en) Light emitting device package and lighting system having the same
JP4820133B2 (en) Light emitting device
KR101926531B1 (en) Light emitting device, manufactured method of the light emitting device and lighting system
JP4925346B2 (en) Light emitting device
KR102629894B1 (en) Light emitting device package and lighting apparatus having thereof
KR101831283B1 (en) Light Emitting Diode Package
JP2006237652A (en) Translucent adhesive
KR101831276B1 (en) Light Emitting Diode Package

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20040928

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20041027

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20060411

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060609

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20060609

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20060609

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20060701

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20060815

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20060828

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090915

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090915

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100915

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100915

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110915

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110915

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120915

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120915

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130915

Year of fee payment: 7

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees