KR102629894B1 - Light emitting device package and lighting apparatus having thereof - Google Patents

Abstract

A light emitting device package disclosed in an embodiment of the invention includes a substrate including first and second frames; a light emitting device including a first bonding part facing the first frame and a second bonding part facing the second frame; A phosphor layer on the light emitting device; a first resin disposed on the upper surface of the substrate and around the light emitting device; a second resin between the first resin and a side surface of the light emitting device; and an adhesive layer between the phosphor layer and the light emitting device, wherein the adhesive layer has a thickness smaller than that of the phosphor layer, and the first resin includes a reflective resin material and is disposed on a side of the phosphor layer. , the second resin includes a transparent resin material, and the outer surface of the second resin facing the first resin may include a curved surface.

Description

Light emitting device package and lighting device equipped with the same {LIGHT EMITTING DEVICE PACKAGE AND LIGHTING APPARATUS HAVING THEREOF}

Embodiments of the invention relate to a light emitting device package and a lighting device including the same.

Embodiments of the invention relate to a method of manufacturing a light emitting device package.

Light emitting devices, such as light emitting diodes, are a type of semiconductor device that converts electrical energy into light, and are attracting attention as a next-generation light source, replacing existing fluorescent and incandescent lamps.

Light-emitting diodes generate light using semiconductor elements, so they consume very low power compared to incandescent lamps, which generate light by heating tungsten, or fluorescent lamps, which generate light by colliding ultraviolet rays generated through high-pressure discharge with phosphors. .

In addition, since light emitting diodes generate light using the potential gap of a semiconductor device, they have a longer lifespan, faster response characteristics, and are environmentally friendly compared to existing light sources.

Accordingly, much research is being conducted to replace existing light sources with light-emitting diodes, and light-emitting diodes are used in lighting devices such as various lamps, liquid crystal displays, electronic signs, street lights, tail lights, interior lights, and headlamps used indoors and outdoors. Their use as a light source is increasing.

An embodiment of the invention provides a light emitting device package in which a second resin is disposed between a light emitting device and a first resin.

An embodiment of the invention provides a light emitting device package in which a second resin made of a light-transmitting material is disposed between the side of the light emitting device and a first resin made of a reflective material, and a method of manufacturing the same.

An embodiment of the invention provides a light emitting device package in which a second resin of a light-transmitting material and a first resin of a reflective material are disposed between a substrate and a phosphor layer, and a method of manufacturing the same.

An embodiment of the invention provides a light emitting device package in which side light extraction efficiency is improved by sealing the side of the light emitting device with a transparent resin.

An embodiment of the invention provides a light-emitting device package in which a phosphor layer is disposed on a light-emitting device, and a first resin is disposed on a side of the phosphor layer and a second resin is disposed on the bottom.

An embodiment of the invention provides a light emitting device package in which an optical lens having a convex lens portion is disposed on a light emitting device.

An embodiment of the invention provides a light emitting device package including a light emitting device disposed on a ceramic substrate, a phosphor layer and an optical lens disposed on first and second resins, and a lighting device having the same.

Embodiments of the invention can provide a light emitting device package with improved light uniformity and light efficiency characteristics.

A light emitting device package according to an embodiment of the invention includes a substrate including first and second frames; a light emitting device including a first bonding part facing the first frame and a second bonding part facing the second frame; A phosphor layer on the light emitting device; a first resin disposed on the upper surface of the substrate and around the light emitting device; a second resin between the first resin and a side surface of the light emitting device; and an adhesive layer between the phosphor layer and the light-emitting device, wherein an outer portion of the phosphor layer protrudes further outward than a side surface of the light-emitting device, and the adhesive layer has a thickness smaller than that of the phosphor layer. The first resin includes a reflective resin material and is disposed on a side of the phosphor layer, the second resin includes a transparent resin material, and the second resin may include a curved outer surface facing the first resin. there is.

According to an embodiment of the invention, the first resin extends between the lower surface of the light emitting device and the substrate, the second resin overlaps the outer lower surface of the phosphor layer in a vertical direction, and the second resin is the adhesive layer. can be connected to

According to an embodiment of the invention, the first and second frames include a plurality of recesses disposed along the outer side of each corner of the light emitting device, and the plurality of recesses are arranged in a direction perpendicular to the first and second resins. May overlap.

According to an embodiment of the invention, the thickness of the second resin may be greater than the thickness of the light emitting device and may be smaller than the thickness of the first resin.

According to an embodiment of the invention, the outer surface of the second resin includes a convex curved surface in the direction of the first resin, and the convex curved surface of the first resin may overlap each side of the light emitting device in the horizontal direction.

According to an embodiment of the invention, the center of the circle having the convex curved surface in the second resin may be disposed on an area that overlaps the light emitting device in a vertical direction.

According to an embodiment of the invention, the outer surface of the second resin includes a concave curved surface, and the center of the circle having the concave curved surface in the second resin may be disposed on an area that overlaps the second resin in a vertical direction. there is.

According to an embodiment of the invention, the substrate includes a body made of a ceramic material, the substrate includes a third frame surrounding the first and second frames on the outer periphery of the first and second frames, and a plurality of lower frames on the lower surface of the substrate. , and a plurality of connecting members that penetrate the body and are connected to the first and second frames, and a gap between the plurality of connecting members may be greater than the length of one side of the light emitting device.

According to an embodiment of the invention, an optical lens is disposed on the substrate, the phosphor layer, and the first resin, the optical lens is attached to the first and second frames and the upper surface of the body of the substrate, and the optical lens is attached to the first and second frames and the upper surface of the body of the substrate. The outer side may be disposed on the same vertical plane as the side of the substrate.

According to an embodiment of the invention, a transparent third resin is included between the first resin and the second resin, and the third resin can be in contact with the side of the phosphor layer.

A light emitting device package according to an embodiment of the invention includes a light emitting device including first and second electrodes, a light emitting structure on the first and second electrodes, and a transparent substrate on the light emitting structure; A phosphor layer disposed on the light transmitting substrate; and a first resin disposed around the light emitting device and the phosphor layer and made of a reflective material, wherein the phosphor layer includes a concave recess toward the upper surface of the phosphor layer, and is a portion of the transparent substrate of the light emitting device. is disposed in the recess, and the first resin includes an outer region in contact with a side surface of the phosphor layer, and the horizontal width of the outer region of the first resin may be in the range of 30㎛ to 500㎛.

According to an embodiment of the invention, the first resin includes a first region disposed on a side of the phosphor layer in a vertical direction and a second region disposed on a side of the light emitting device, and the thickness of the first region is It may be smaller than the thickness of the second region.

According to an embodiment of the invention, a step portion may be disposed between the first area and the second area.

According to an embodiment of the invention, the thickness of the first region may be in the range of 1:0.3 to 1:0.75 compared to the thickness of the second region.

According to an embodiment of the invention, the inner surface of the first resin facing the side of the light emitting device may include a curvature.

According to an embodiment of the invention, a transparent second resin is disposed between the first resin and the light emitting element, the outer surface of the second resin is in contact with the inner surface of the first resin, and the curvature of the first resin is It may have a curvature corresponding to .

According to an embodiment of the invention, the first resin is disposed on a portion of the lower surface of the light emitting device, and the first resin may be disposed on the same plane as the lower surfaces of the first electrode and the second electrode.

According to an embodiment of the invention, the phosphor layer includes a center region overlapping in a vertical direction with the recess and an outer region overlapping in a vertical direction with the second resin, and the lower surface of the outer region is the upper surface of the light emitting device. It is disposed lower, and the thickness of the recess may be in the range of 0.1 to 0.5 compared to the thickness of the phosphor layer.

Embodiments of the invention can improve the extraction efficiency of light emitted through the side of the light emitting device.

Embodiments of the invention can reduce light loss on the side of the light emitting device.

An embodiment of the invention covers the second resin made of a light-transmitting material attached to the light-emitting device with the first resin, thereby extracting light from the side of the light-emitting device and guiding light reflection toward the top.

Embodiments of the invention can improve the luminous flux of the light emitting device package.

The light emitting device package according to an embodiment of the invention can improve light extraction efficiency by disposing the first and second resins around the light emitting device.

Embodiments of the invention can improve the light beam angle by providing a light emitting device package having a lens.

Embodiments of the invention can improve light uniformity and light efficiency characteristics in a light emitting device package.

Embodiments of the invention can improve the light efficiency characteristics and moisture resistance of a light emitting device package.

The reliability of a light emitting device package according to an embodiment of the invention may be improved.

1 is a plan view of a light emitting device package according to a first embodiment of the invention.
FIG. 2 is a cross-sectional view along AA side of the light emitting device package of FIG. 1.
FIG. 3 is an example of arranging a light emitting device on a substrate of the light emitting device package of FIG. 1.
Figure 4 is a partial enlarged view showing the first and second resins in the light emitting device package of Figure 2.
Figure 5 is another example of the light emitting device package of Figure 4.
Figure 6 is a first modified example of the light emitting device package of Figure 2.
Figure 7 is a partial enlarged view of the light emitting device package of Figure 6.
Figure 8 is a second modified example of the light emitting device package of Figure 2.
Figure 9 is a third modified example of the light emitting device package of Figure 2.
10 to 13 are diagrams explaining the manufacturing process of a light emitting device package according to an embodiment of the invention.
Figure 14 is a plan view showing another example of a light emitting device package according to the first embodiment of the invention.
Figure 15 is a perspective view of a light emitting device package according to a second embodiment of the invention.
FIG. 16 is a cross-sectional view of the light emitting device package of FIG. 15 along the BB side.
FIG. 17 is a detailed view of the light emitting device package of FIG. 16.
Figure 18 is a first modified example of the light emitting device package of Figure 17.
Figures 19 to 23 are diagrams for explaining the manufacturing process of the light emitting device package of Figure 16.
FIG. 24 is an example of a lighting device having the light emitting device package of FIG. 16.
Figure 25 is a diagram showing an example of a light-emitting device in a light-emitting device package according to an embodiment of the invention.
Figure 26 is another example of a light-emitting device in a light-emitting device package according to an embodiment of the invention.
Figure 27 is a box plot comparing the luminous flux according to the comparative example and the first embodiment.

Hereinafter, preferred embodiments of the invention will be described in detail with reference to the attached drawings.

The technical idea of the present invention is not limited to some of the described embodiments, but can be implemented in various different forms, and one or more of the components between the embodiments can be selectively combined as long as it is within the scope of the technical idea of the present invention. , can be used as a replacement. In addition, terms (including technical and scientific terms) used in the embodiments of the present invention, unless specifically defined and described, are generally understood by those skilled in the art to which the present invention pertains. It can be interpreted as meaning, and the meaning of commonly used terms, such as terms defined in a dictionary, can be interpreted by considering the contextual meaning of the related technology. Additionally, the terms used in the embodiments of the present invention are for describing the embodiments and are not intended to limit the present invention. In this specification, the singular may also include the plural unless specifically stated in the phrase, and when described as "at least one (or more than one) of A and B and C", it is combined with A, B, and C. It can contain one or more of all possible combinations. Additionally, when describing the components of an embodiment of the present invention, terms such as first, second, A, B, (a), and (b) may be used. These terms are only used to distinguish the component from other components, and the essence, order, or order of the component is not determined by the term. And, when a component is described as being 'connected', 'coupled' or 'connected' to another component, the component is not only directly connected, coupled or connected to the other component, but also is connected to the other component. It may also include cases where other components are 'connected', 'coupled', or 'connected' by another component between them. Additionally, when described as being formed or disposed "above" or "below" each component, "above" or "below" refers not only to cases where two components are in direct contact with each other, but also to one This also includes cases where another component described above is formed or placed between two components. In addition, when expressed as "top (above) or bottom (bottom)", it can include not only the upward direction but also the downward direction based on one component.

<First embodiment>

Figure 1 is a plan view of a light emitting device package according to the first embodiment of the invention, Figure 2 is a cross-sectional view from the side A-A of the light emitting device package of Figure 1, and Figure 3 is a light emitting device disposed on a substrate of the light emitting device package of Figure 1. As an example, Figure 4 is a partial enlarged view showing the first and second resins in the light emitting device package of Figure 2.

1 to 4, the light emitting device package 100 includes a substrate 201, a light emitting device 120 disposed on the substrate 201, and an optical lens 260 on the light emitting device 120. Includes. The light emitting device package 100 may include a phosphor layer 180 disposed on the light emitting device 120. The light emitting device package 100 includes a first resin 250 disposed around the light emitting device 120, and a second resin 240 disposed between the first resin 250 and the light emitting device 120. may include.

The substrate 201 includes a body 210 and a plurality of frames 221 and 223 disposed on the upper surface of the body 210. The plurality of frames 221 and 223 may be electrically connected to the light emitting device 120. The substrate 201 may include a third frame 225 outside the upper surface of the body 210.

The body 210 includes an insulating material or a thermally conductive material. The body 210 includes, for example, a ceramic material. The ceramic material includes co-fired low temperature co-fired ceramic (LTCC) or high temperature co-fired ceramic (HTCC). The material of the body 210 may be a metal compound such as Al ₂ O ₃ or AlN, preferably aluminum nitride (AlN) or alumina (Al ₂ O ₃ ), or may have a thermal conductivity of 140. It may contain metal oxides having a W/mK or higher.

As another example, the body 210 may be formed of a resin-based insulating material, such as polyphthalamide (PPA). The body 210 may be made of a thermosetting resin including silicone, epoxy resin, or plastic material, or a material with high heat resistance and high light resistance. As another example, acid anhydrides, antioxidants, release materials, light reflectors, inorganic fillers, curing catalysts, light stabilizers, lubricants, and titanium dioxide may be selectively added to the body 210. It contains. The body 210 may be molded from at least one selected from the group consisting of epoxy resin, modified epoxy resin, silicone resin, modified silicone resin, acrylic resin, and urethane resin. For example, epoxy resins made of triglycidyl isocyanurate, hydrogenated bisphenol A diglycidyl ether, etc., and acids made of hexahydrophthalic anhydride, 3-methylhexahydrophthalic anhydride, 4-methylhexahydrophthalic anhydride, etc. The anhydride was added to the epoxy resin with DBU (1,8-Diazabicyclo(5,4,0)undecene-7) as a curing accelerator, ethylene glycol, titanium oxide pigment, and glass fiber as cocatalysts, and partially heated. A solid epoxy resin composition that has been B-staged through a curing reaction can be used, but is not limited thereto.

The thickness of the body 210 may be 1 mm or less, for example, in the range of 0.45 mm to 0.55 mm. If it is thinner than the above range, there is a problem of reduced heat dissipation efficiency and unsupportability, and if it is thicker than the above range, heat dissipation efficiency is improved. This problem is small and causes the thickness of the substrate 201 to increase.

The width of the substrate 201 in the first direction (X) may be the same as or different from the length in the second direction (Y). The width or length of the substrate 201 may be 1.5 mm or more, for example, in the range of 2 mm to 4 mm. If the width or length is smaller than the above range, the heat dissipation efficiency of the large-area light emitting device 120 may be reduced, Light efficiency may also decrease, and if it is greater than the above range, it may result in waste of materials. Here, the size of the light emitting device 120 may be 1 mm or more on one side. The width or length of the substrate 201 may vary depending on the size of the light emitting device 120.

The light emitting device 120 may have a top view shape of a polygon, for example, a square or rectangular shape. The length of one side of the light emitting device 120 may be 40% or more, for example, 40% to 80% of the length of one side of the substrate 201. By arranging the light emitting device 120 with a larger area compared to the top surface area of the substrate 201, light extraction efficiency by the large area light emitting device 120 can be improved.

1 and 2, the first frame 221 of the substrate 201 may be electrically separated from the second frame 223. The first frame 221 and the second frame 223 are electrically separated from the third frame 225. The first gap area 214 is an area where the first frame 221 and the second frame 223 are removed, and can separate the first frame 221 and the second frame 223. The third frame 225 may be disposed on the outer periphery of the first frame 221 and the second frame 223. The third frame 225 may have a continuously connected ring shape or a discontinuous ring shape. The second gap area 215 may physically separate the first frame 221, the second frame 223, and the third frame 225. The first gap area 214 and the second gap area 215 may be connected to each other.

The first frame 221 may function as a terminal of the first polarity, and the second frame 223 may function as a terminal of the second polarity. The first and second polarities may be electrically different from each other. For example, if the first polarity is a cathode, the second polarity may be an anode, and conversely, if the first polarity is an anode, the first polarity may be a cathode. Here, as another example, the third frame 225 may be connected to any one of the first frame 221 and the second frame 223. The third frame 225 may include a mark portion M1 for indicating or distinguishing the polarity of the first frame 221. The third frame 225 may be spaced apart from the side surfaces S1, S2, S3, and S4 of the body 210. The outer periphery of the upper surface of the body 210 may include an open area 217 in which the upper surface of the body is exposed. The upper surface of the body 210 may be exposed in the open area 217 and the first and second gap areas 214 and 215. The lower part of the optical lens 260 can be attached to the upper surface of the body 210 through the open area 217, thereby suppressing the infiltration of moisture from the outside.

The first frame 221 and the second frame 223 may be disposed on both sides of the center on the body 210 of the substrate 201. Each of the first frame 221 and the second frame 223 may be arranged on the upper surface of the body 210 to be larger than the size of the light emitting device 120. The light emitting device 120 may be disposed on at least one of the first frame 221 and the second frame 223. For example, the light emitting device 120 may be disposed on the first frame 221 and the second frame 223. The light emitting device 120 may overlap the first frame 221 and the second frame 223 in the vertical direction.

The top surface area of the first frame 221 and the top surface area of the second frame 223 may be the same or have an area difference of 20% or less. It is electrically connected to the light-emitting device 120 through the first frame 221 and the second frame 223, and heat generated from the light-emitting device 120 can be conducted or dissipated through the body 210. Additionally, by minimizing the difference in area between the first and second frames 221 and 223, thermal collision problems due to differences in heat dissipation can be prevented.

As shown in FIG. 2 , the substrate 201 may include connecting members 239 and 249 and lower frames 281, 283, and 285. The connecting members 239 and 249 and the lower frames 281, 283, and 285 may be disposed on the lower surface of the body 210. The lower frame may include a first lower frame 281, second lower frames 283, and third lower frames 283 and 285. The first lower frame 281 may function as a heat dissipation plate on the lower surface of the body 210 and may overlap the light emitting device 120 in a vertical direction. The first lower frame 281 may be separated from the second and third lower frames 283 and 285.

The second and third lower frames 283 and 285 may function as terminals that supply power. The second lower frame 283 is connected to the first frame 221 through a first connection member 239, and the third lower frame 285 is connected to the second frame through a second connection member 249. It can be connected to (223). The first connection member 239 may penetrate the upper and lower surfaces of the body 210 and connect the first frame 221 and the second lower frame 283. The second connection member 249 may penetrate the upper and lower surfaces of the body 210 and connect the second frame 223 and the third lower frame 285. The first lower frame 281 overlaps the first frame 221 and the second frame 223 in a vertical direction, and the second lower frame 283 is perpendicular to a portion of the first frame 221. The third lower frame 285 may overlap a portion of the second frame 223 in a vertical direction.

The first, second, and third frames 221,223,225 and the first, second, and third lower frames 281,283,285 are made of titanium (Ti), copper (Cu), nickel (Ni), gold (Au), and chromium. It may contain a plurality of metals among (Cr), tantalum (Ta), platinum (Pt), tin (Sn), silver (Ag), and phosphorus (P), and may be formed in multiple layers. Silver (Ag) or aluminum (Ag) is formed on the surfaces of the first frame 221 and the second frame 223, which can improve the reflection efficiency of incident light. A gold (Au) layer is formed on the surfaces of the first, second, and third lower frames 281, 283, and 285, thereby preventing corrosion due to moisture and improving electrical reliability.

Each of the first, second, and third frames (221,223,225) and the first, second, and third lower frames (281,283,285) may be formed to have a thickness in the range of 85 ± 20㎛, and if it is outside the range, the electrical characteristics and Heat conduction characteristics may deteriorate.

Each of the first and second connecting members 239 and 249 may be disposed in one or multiple pieces within the body 210 . The first and second connecting members 239 and 249 may be made of a conductive material, for example, a metal material.

As shown in FIG. 1, the gap between the first and second connecting members 239 and 249 is disposed to be larger than the length or width of the light emitting element 120, thereby reducing interference between them and improving electrical transfer and heat dissipation efficiency. there is.

The light emitting device 120 may include a first bonding part 121, a second bonding part 122, and a light emitting structure 123. The light emitting device 120 may include a transparent substrate 124 on the light emitting structure 123. The light emitting device 120 may emit light through a plurality of side surfaces and a top surface.

The light emitting structure 123 may include a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer. The light emitting structure 123 may emit at least one or two of UV, blue, green, red, and white lights. The light emitting structure 123 may emit, for example, blue light.

According to an embodiment of the invention, the light emitting structure 123 may be provided as a compound semiconductor. For example, the light emitting structure 123 may be provided as a Group 2-6 or Group 3-5 compound semiconductor. As an example, the light emitting structure 123 includes at least two elements selected from aluminum (Al), gallium (Ga), indium (In), phosphorus (P), arsenic (As), and nitrogen (N). It can be.

The light emitting structure 123 may include a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer. The first and second conductivity type semiconductor layers may be implemented with at least one of group 3-5 or group 2-6 compound semiconductors. The first and second conductive semiconductor layers are, for example, a semiconductor material having a composition formula of In _x Al _y Ga _{1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x+y≤1) It can be formed as For example, the first and second conductive semiconductor layers may include at least one selected from the group including GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, etc. . The first conductive semiconductor layer may be an n-type semiconductor layer doped with an n-type dopant such as Si, Ge, Sn, Se, or Te. The second conductive semiconductor layer may be a p-type semiconductor layer doped with a p-type dopant such as Mg, Zn, Ca, Sr, or Ba.

The active layer may be implemented as a compound semiconductor. For example, the active layer may be implemented with at least one of group 3-5 compound semiconductors or group 2-6 compound semiconductors. When the active layer is implemented as a multi-well structure, the active layer may include a plurality of well layers and a plurality of barrier layers arranged alternately, In _x Al _y Ga _{1 -x- y} N (0≤x≤1 , 0≤y≤1, 0≤x+y≤1). For example, the active layer is selected from the group including InGaN/GaN, GaN/AlGaN, AlGaN/AlGaN, InGaN/AlGaN, InGaN/InGaN, AlGaAs/GaAs, InGaAs/GaAs, InGaP/GaP, AlInGaP/InGaP, InP/GaAs. It can contain at least one.

The first conductive semiconductor layer may be disposed between the transparent substrate 124 and the active layer. The second conductive semiconductor layer may be disposed between the active layer and the bonding portions 121 and 122.

The first bonding part 121 may be electrically connected to the first conductive semiconductor layer. The second bonding part 122 may be electrically connected to the second conductive semiconductor layer.

The transparent substrate 124 is a light-transmitting layer and may be made of an insulating material or a semiconductor material. For example, the transparent substrate 124 may be selected from the group including sapphire substrate (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, and Ge. For example, the transparent substrate 124 may have a concavo-convex pattern formed on its surface.

The light emitting device 120 may be disposed on the first frame 221 and the second frame 223. The light emitting device 120 may be disposed on the body 210 .

The first bonding part 121 and the second bonding part 122 may be arranged to be spaced apart from each other based on the direction in which the body 210 is arranged on the lower surface of the light emitting device 120. The first bonding part 121 may be disposed on the first frame 221. The second bonding part 122 may be disposed on the second frame 223. The first bonding part 121 may face the first frame 221. The second bonding part 122 may face the second frame 223.

In the light emitting device package 100 according to an embodiment of the invention, power is connected to the first bonding part 121 of the light emitting device 120 through the first frame 221, and the second frame 223 is connected to the light emitting device package 100. Power may be connected to the second bonding part 122 of the light emitting device 120 through the. The first bonding part 121 and the second bonding part 122 may be electrodes or pads. Accordingly, the light emitting device 120 can be driven by the driving power supplied through the first bonding part 121 and the second bonding part 122. And, the light emitted from the light emitting device 120 can be provided toward the upper part of the body 210.

The first bonding part 121 may be disposed between the light emitting structure 123 and the first frame 211. The second bonding part 122 may be disposed between the light emitting structure 123 and the second frame 213. The first bonding part 121 and the second bonding part 122 may be made of a metal material. The first bonding part 121 and the second bonding part 122 are Cu, Ti, Al, In, Ir, Ta, Pd, Co, Cr, Mg, Zn, Ni, Si, Ge, Ag, Ag alloy, A monolayer using one or more materials or alloys selected from the group including Au, Hf, Pt, Ru, Rh, ZnO, IrOx, RuOx, NiO, RuOx/ITO, Ni/IrOx/Au, Ni/IrOx/Au/ITO Alternatively, it may be formed in multiple layers.

The light emitting device 120 may include one or more light emitting cells therein. The light emitting cell may include at least one of an n-p junction, a p-n junction, an n-p-n junction, and a p-n-p junction. The plurality of light emitting cells may be connected to each other in series within one light emitting device. Accordingly, the light-emitting device may have one or a plurality of light-emitting cells, and when n light-emitting cells are disposed in one light-emitting device, it can be driven with a driving voltage that is n times higher. For example, when the driving voltage of one light-emitting cell is 3V and two light-emitting cells are disposed in one light-emitting device, each light-emitting device can be driven with a driving voltage of 6V. Alternatively, when the driving voltage of one light-emitting cell is 3V and three light-emitting cells are arranged in one light-emitting device, each light-emitting device can be driven with a driving voltage of 9V. The number of light emitting cells disposed in the light emitting device may be 1 or 2 to 5.

The first bonding part 121 may be connected to the first frame 221 through a conductive part or may be bonded to each other. The second bonding portion 122 may be connected to the second frame 223 through a conductive portion or may be bonded to each other. The conductive part may be bonded to the first bonding part 121 and the second bonding part 122 on the upper surfaces of the first frame 221 and the second frame 223. The conductive part may include one material selected from the group including Ag, Au, Pt, Sn, Cu, etc., or an alloy thereof. The materials constituting the first frame 221 and the second frame 223 and at least one of the bonding portions 121 and 122 may be combined with a material of the conductive portion to be combined by an intermetallic compound layer. The intermetallic compound may include at least one of Cu _x Sn _y , Ag _x Sn _y , and Au _x Sn _y , where x satisfies the conditions of 0<x<1, y=1-x, x>y. You can. The conductive part may be formed using a conductive paste. The conductive paste may include solder paste, silver paste, etc., and may be composed of multiple layers made of different materials or a single layer or a single layer made of alloy. As an example, the conductive part may include a SAC (Sn-Ag-Cu) material.

The light emitting device 120 is a light source and selectively emits light in the wavelength range from ultraviolet rays to visible rays. The light emitting device 120 includes a UV LED chip, a green LED chip, a block LED chip, and a red LED chip. The light emitting device 120 may have a thickness of 30㎛ or more, for example, in the range of 50㎛ to 180㎛. These light emitting devices 120 may be arranged in a flip chip form. The light emitting device 120 may be arranged as a horizontal chip or a vertical chip.

A protective element 105 may be disposed above or below any one of the first and second frames 221 and 223, and the protective element 105 is disposed on the first frame 221 and the second frame. It can be connected to (223) and wire (107). The protection element 105 may be implemented as a thyristor, Zener diode, or transient voltage suppression (TVS), and the protection chip 105 protects the light emitting element 120 from electro static discharge (ESD). do.

Referring to FIG. 3, the first frame 221 and the second frame 223 may include recesses (Ma, Mb, Mc) corresponding to the edge areas of the light emitting device 120. The recesses (Ma, Mb, Mc) may be areas where the first frame 221 and the second frame 223 are etched and removed. As shown in FIG. 2, the recesses (Ma, Mb, Mc) may pass through the first frame 221 and the second frame 223 and expose the upper surface of the body 210. The first recess (Ma) of the first frame 221 is formed along the first side and both edges of the light emitting device 120, and the second and third recesses (Ma) of the second frame 223 ( Mb, Mc) may be formed under both corners of the second side opposite to the first side of the light emitting device 120. The size of the area connecting the first, second, and third recesses (Ma, Mb, Mc) may be larger than the size of the lower surface of the light emitting device 120. The first, second, and third recesses (Ma, Mb, Mc) may be spaced apart from each other and disposed along the lower edge of the light emitting device 120. The first, second and third recesses (Ma, Mb, Mc) may function as grooves or marks that guide the mounting of the light emitting device 120, and the conductive portion is exposed to the outside of the light emitting device 120. It can have the function of accommodating the conductive part to prevent it from happening. The first, second and third recesses (Ma, Mb, Mc) may be combined with at least one of the first resin 250 and the second resin 240. For example, the first resin 250 may be disposed in the first, second, and third recesses (Ma, Mb, Mc) to support the first resin 250 or to support the light emitting device 120. It can prevent drift or tilt.

Referring to Figures 1 and 2, the phosphor layer 180 may be disposed on the top surface of the light emitting device 120. The phosphor layer 180 may be disposed on the transparent substrate 124 of the light emitting device 120. The phosphor layer 180 may be equal to the top surface area of the light emitting device 120 or may be larger than the top surface area of the light emitting device 120. The outer portion of the phosphor layer 180 may protrude outward from the side of the light emitting device 120.

As shown in Figure 4, the outer portion of the phosphor layer 180 may protrude a predetermined distance b1 from the side of the light emitting device 120. The distance b1 may include a range of 80 micrometers or more, for example, 80 to 120 micrometers. If the distance b1 is smaller than the above range, light emitted from the light emitting device 120 may be emitted through the outside of the phosphor layer 180 and wavelength conversion efficiency may be reduced. If the distance b1 is greater than the above range, the improvement in wavelength conversion efficiency may be minimal. The phosphor layer 180 may protrude further outward than the front side of the light emitting device 120 at the distance b1, thereby converting the wavelength of some light emitted upward through the light emitting device 120. there is. The length of one side of the phosphor layer 180 may be 160 micrometers or more than the length of one side of the light emitting device 120, for example, in the range of 160 to 240 micrometers.

The phosphor layer 180 absorbs some of the light emitted from the light emitting device 120 and converts it into light of a different wavelength. The phosphor layer 180 is a phosphor added to a light-transmitting resin material such as UV (ultra violet) resin, silicone, or epoxy, and the phosphor includes at least one of yellow phosphor, green phosphor, blue phosphor, and red phosphor. For example, nitride-based phosphors, oxynitride-based phosphors, and cylon-based phosphors that are mainly activated by lanthanoid elements such as Eu and Ce, lanthanoids such as Eu, and transition metal elements such as Mn. Mainly activated by alkaline earth halogen apatite phosphor, alkaline earth metal boric acid halogen phosphor, alkaline earth metal aluminate phosphor, alkaline earth silicate, alkaline earth sulfide, alkaline earth thiogalate, alkaline earth silicon nitride, germanate, or Ce. It may be at least one selected from rare earth aluminates and rare earth silicates that are mainly activated by lanthanoid elements such as Eu, or organic and organic complexes that are mainly activated by lanthanoid elements such as Eu. As a specific example, the above-mentioned phosphor can be used, but it is not limited to this.

Light emitted from the phosphor layer 180 and light emitted from the light emitting device 120 may be mixed into white light. The white light may have a color temperature of at least one of warm white, cool white, or neutral white.

The phosphor layer 180 may have a thickness different from that of the light emitting device 120. The phosphor layer 180 may be provided in the form of a film. The phosphor layer 180 may have a horizontal upper and lower surface.

The light emitting device package 100 according to the first embodiment of the invention may include a first resin 250 and a second resin 240. The first resin 250 may be disposed around the light emitting device 120. The first resin 250 may be disposed on the upper surfaces of the first frame 221 and the second frame 223. The first resin 250 is disposed along the outer circumference of the light emitting device 120 and may be in contact with the upper surfaces of the first frame 221 and the second frame 223. A portion of the first resin 250 may be disposed in the first gap area 214. As shown in FIG. 4, a portion of the first resin 250 may be disposed in the first recess (Ma).

The first resin 250 may include a reflective material. The first resin 250 may be a reflective member or a reflective resin member. The first resin 250 may include metal oxide in the resin material. The resin material includes silicon or epoxy, and the metal oxide is a material with a higher refractive index than the resin material, and includes, for example, at least one of Al ₂ O ₃ , TIO ₂ or SiO ₂ . The metal oxide is formed in the first resin 250 in an amount of 5 wt% or more, for example, in the range of 5 to 30 wt%. The first resin 250 may have a reflectivity of 90% or more for the light emitted from the light emitting device 120. The first resin 250 may be made of white resin.

The first resin 250 may be disposed around the phosphor layer 180. The first resin 250 may be in contact with the side surface of the phosphor layer 180. The first resin 250 may be in contact with the lower surface of the phosphor layer 180. The first resin 250 may have a gradually thinner width as it approaches the top surface or top edge of the phosphor layer 180.

The top of the first resin 250 may be the same as the top of the phosphor layer 180 or may have a height lower than the top of the phosphor layer 180. The first resin 250 reflects light emitted through the side of the light emitting device 120. The first resin 250 reflects light emitted from the side of the phosphor layer 180.

When the first resin 250 is dispensed around the light emitting device 120, it may extend to the side of the phosphor layer 180 by capillary action. Accordingly, a gap may not be formed in the area between the first resin 250, the second resin 240, and the phosphor layer 180, so that the first resin 250 and the second resin 240 It can strengthen the adhesion to the area between and the phosphor layer 180.

As shown in FIGS. 1, 3, and 4, the first resin 250 is disposed on an outer circumference further than the top edge of the phosphor layer 180, supports the side surface of the light emitting element 120, and extends to the surface. The incident light is reflected. The surface of the first resin 250 may be an inclined surface or may include a concave curved surface. The first resin 250 is formed on the upper surfaces of the first frame 221 and the second frame 223, the inside of the first gap region 214, and the first, second, and third recesses (Ma, It may be in contact with the upper surface of the body 210 exposed to Mb, Mc).

The second resin 240 may be disposed between the side of the light emitting device 120 and the first resin 250. The second resin 240 may be in contact with the side surface of the light emitting device 120, the inner surface of the second resin 240, and the lower surface of the phosphor layer 180.

As shown in Figure 4, the second resin 240 may be disposed around the light emitting device 120. The second resin 240 may be disposed on each side of the light emitting device 120. The second resin 240 may be in contact with all sides of the light emitting device 120. The thickness of the second resin 240 may be the same as or thicker than the thickness of the light emitting device 120. The second resin 240 may be in contact with the interface between the phosphor layer 180 and the light emitting device 120. The thickness of the second resin 240 may be thinner than the thickness of the first resin 250. The thickness of the second resin 240 may be 100 micrometers or more, for example, in the range of 100 to 200 micrometers. The thickness of the second resin 240 may vary depending on the thickness of the light emitting device 120.

The second resin 240 may be a transparent material. The second resin 240 may be a transparent member or a light-transmitting resin member. The refractive index of the second resin 240 may be 1.8 or less, for example, in the range of 1.1 to 1.8 or 1.4 to 1.6. The second resin 240 may be formed of a transparent resin material. The second resin 240 may include, for example, UV (Ultra violet) resin, or a silicone-based or epoxy-based material. The second resin 240 may include a methyl-phenyl type. The second resin 240 may include a resin material with higher transmittance and adhesion than the first resin.

The upper surface (Sa) of the second resin 240 may be in contact with the lower surface of the phosphor layer 180. The outer surface (Sb) of the second resin 240 may be in contact with the inner surface of the first resin 250. At this time, the first resin 250 is a reflective material and is provided as a concave curved surface or reflective structure surrounding the outside of the second resin 240, so the inner area of the first resin 250 can be provided as a cavity area. .

The inner surface (Sc) of the second resin 240 may be in contact with the side surface of the light emitting device 120. The second resin 240 may overlap the outer portion of the phosphor layer 180 in a vertical direction. The width b2 of the upper surface Sa of the second resin 240 may be equal to or smaller than the distance b1 of the outer portion of the phosphor layer 180. The width b2 may be 100 micrometers or less, for example, in the range of 50 to 100 micrometers. If the width b2 of the upper surface Sa of the second resin 240 is smaller than the above range, light extraction efficiency may be reduced, and if it is larger than the above range, light loss may occur. The second resin 240 may have a gradually thinner width toward the bottom.

The outer surface Sb of the second resin 240 may include a curved surface that is convex in an outward or diagonal direction between the lower surface of the phosphor layer 180 and the side surface of the light emitting device 120. The entire outer surface Sb of the second resin 240 may be provided as a convex curved surface. The outer surface (Sb) of the second resin 240 may be formed into a curved shape by surface tension after the resin liquid pressurized through the interface between the phosphor layer 180 and the light emitting device 120 is diffused. there is.

The outer surface (Sb) of the second resin 240 may have a predetermined curvature, and the center p1 of the circle of the radius of curvature of the outer surface (Sb) overlaps the light emitting device 120 in the vertical direction. It can be placed on the area. Since the inner surface of the first resin 250 is in contact with the outer surface Sb of the second resin 240, it may include a concave curved surface. When the inner surface of the first resin 250 is formed as a concave curved surface, the inner surface of the first resin 250 reflects light incident through the first resin 250 toward the phosphor layer 180. I can give it.

The second resin 240 may overlap the transparent substrate 124 and the light emitting structure 123 of the light emitting device 120 in the horizontal direction. Accordingly, the light emitted through the side of the transparent substrate 124 and the light emitting structure 123 is guided through the second resin 240 and reflected by the first resin 250, or the phosphor layer 180 ) can be entered into the bottom of the.

The second resin 240 is disposed between the phosphor layer 180 and the substrate 210 in a vertical direction, or between the phosphor layer 180 and the first frame 221 and the second frame 223. can be placed in A portion of the second resin 240 may be disposed between the phosphor layer 180 and the first, second, and third recesses (Ma, Mb, Mc) of the substrate 210 in a vertical direction.

The inner portion of the first resin 250 may be disposed in the first, second, and third recesses Ma, Mb, and Mc, or may extend to the lower surface of the light emitting device 120. The inner portion of the first resin 250 may penetrate into the area between the light emitting device 120 and the substrate 201 by capillary action. Accordingly, the second resin 240 may be disposed between the phosphor layer 180 and the first resin 250 in a vertical direction. The gap between the lower surface of the light emitting device 120 and the upper surface of the substrate 201 may be 100 micrometers or less, for example, in the range of 30 to 100 micrometers.

The second resin 240 may be spaced apart from the upper surface of the body 210 and the upper surfaces of the first frame 221 and the second frame 223. The second resin 240 may not be in contact with the upper surface of the substrate 201. The second resin 240 may not be in contact with the first bonding part 121 and the second bonding part 122 of the light emitting device 120. As another example, when the amount of resin dispensed is greater, the second resin 240 may contact the upper surface of the substrate 201 or the first bonding part 121 and the second bonding part 122. there is.

The outer surface Sb of the second resin 240 may have a radius of curvature on each side of the light emitting device 120 that is the same or different from each other. This means that if the amount of resin dispensed is deviated to one side or is insufficient, the radius of curvature of the outer surface Sb of the second resin 240 on each side of the light emitting device 120 may become larger or smaller. The arc length of the outer surface (Sb) of the second resin 240 may be the same or different on each side of the light emitting device 120.

As shown in FIGS. 2 and 4 , the light emitting device package 100 may include an adhesive layer 242 . The adhesive layer 242 may be disposed between the phosphor layer 180 and the light emitting device 120. The adhesive layer 242 may be adhered to the lower surface of the phosphor layer 180 and the upper surface of the light emitting device 120. The adhesive layer 242 may be adhered to the upper surface of the transparent substrate 124 of the light emitting device 120. The thickness of the adhesive layer 242 may be thinner than the thickness of the phosphor layer 180. The thickness of the adhesive layer 242 may be 50 micrometers or less, for example, in the range of 0.01 to 50 micrometers. If the thickness of the adhesive layer 242 is thicker than the above range, a problem may occur in which the outer surface shape of the second resin 240 does not have a curved surface, and if the thickness is greater than the above range, the adhesive strength may be reduced. The adhesive layer 242 may be connected to the second resin 240. The adhesive layer 242 may be formed of the same material as the second resin 240. The adhesive layer 242 may be connected to the second resin 240 disposed on each side of the light emitting device 120.

In an embodiment of the invention, the second resin 240 made of a light-transmitting material is disposed between the light emitting device 120 and the first resin 250 made of a reflective material, so the light traveling through the second resin 240 is transmitted through the phosphor layer. It can be reflected in the (180) direction. Accordingly, the loss of light emitted through the side of the light emitting device 120 can be reduced, thereby improving the luminous flux of the package. Additionally, when the light reflected by the phosphor layer 180 is incident on the second resin 240, it is re-reflected, thereby suppressing light loss and improving the luminous flux.

The light emitting device package 100 according to an embodiment of the invention may include an optical lens 260. The optical lens 260 is disposed on the substrate 201 and can seal the light emitting device 120. The optical lens 260 may be disposed on the top and side surfaces of the light emitting device 120. The optical lens 260 may extend to the top surface of the first, second, and third frames 221, 223, and 225 disposed around the light emitting device 120 and the top surface of the body 210.

The optical lens 260 may be made of a transparent resin material such as silicone or epoxy. As another example, the optical lens 260 may be made of glass or transparent plastic.

The optical lens 260 includes a lens unit 261 and a buffer unit 265, and the lens unit 261 protrudes in a hemispherical shape on the light emitting device 120. The center of the lens unit 261 protrudes convexly upward. The height of the lens unit 261 may be 2 mm or less, for example, in the range of 1.2 mm to 2 mm. If the height of the lens unit 261 is outside the above range, the thickness of the light emitting device package 100 may increase, and the If it is smaller than the range, light extraction efficiency may decrease.

The buffer unit 265 of the optical lens 260 is disposed around the light emitting device 120 and may have a concave curved surface or a flat upper surface. The buffer portion 265 of the optical lens 260 may extend around the light emitting device 120 to the outside of the first, second, and third frames 221, 223, and 225. The buffer unit 265 may contact the upper surface of the body 210 in areas where the first, second, and third frames 221, 223, and 225 of the body 210 are not formed. The outer side of the buffer unit 265 may be arranged in the same vertical plane as the side surfaces S1, S2, S3, and S4 of the body 210, but is not limited thereto. The buffer portion 265 may be formed along the outer edge of the body 210 to prevent moisture infiltration. The thickness of the buffer portion 265 can be provided to prevent moisture infiltration.

Figure 5 is another example of the light emitting device package of Figure 4. In the description of FIG. 5, the same configuration as the description disclosed above will be selectively applied with reference to the description above.

Referring to FIG. 5, the phosphor layer 180 has an inner portion (Pa) that overlaps the light-emitting device 120 in a vertical direction, and is formed around the inner portion (Pa) further outward than the side of the light-emitting device 120. It may include a protruding outer portion (Pb).

The outer portion (Pb) of the phosphor layer 180 may be lower than the inner portion (Pa). In this case, the upper surface of the outer portion (Pb) may be disposed lower than the upper surface of the inner portion (Pa). The lower surface of the outer portion (Pb) may be disposed lower than the lower surface of the inner portion (Pa). The upper surface of the outer portion (Pb) may extend in a stepped manner from the upper surface of the inner portion (Pa). The outer portion (Pb) may overlap the adhesive layer 242 and/or the top of the light emitting device 120 in the horizontal direction. Accordingly, since the outer portion (Pb) of the phosphor layer 180 is adhered to the first resin 250 and the second resin 240, the problem of separation of the outer portion (Pb) can be prevented.

FIG. 6 is a first modified example of the light emitting device package of FIG. 2, and FIG. 7 is a partial enlarged view of FIG. 6. In the description of FIGS. 6 and 7, the same configuration as the description disclosed above will be selectively applied with reference to the description above.

Referring to Figures 6 and 7, the second resin 241 may be disposed on the side of the light emitting device 120 and the outer lower surface of the phosphor layer 180. The second resin 241 may be connected to the adhesive layer 242. The second resin 241 may be disposed between the first resin 250 and the light emitting device 120.

The upper surface (Sa) of the second resin 241 may be in contact with the lower surface of the phosphor layer 180. The outer surface (Sb) of the second resin 241 may be in contact with the inner surface of the first resin 250. The inner surface (Sc) of the second resin 241 may be in contact with the side surface of the light emitting device 120. The second resin 241 may overlap the outer portion of the phosphor layer 180 in a vertical direction. The width b2 of the upper surface Sa of the second resin 241 may be equal to or smaller than the distance b1 of the outer portion of the phosphor layer 180. The width b2 may be 100 micrometers or less, for example, in the range of 50 to 100 micrometers. If the width b2 of the upper surface Sa of the second resin 241 is smaller than the above range, light extraction efficiency may be reduced, and if it is larger than the above range, light loss may occur.

The outer surface Sb of the second resin 241 may include a curved surface that is concave in an inward or diagonal direction between the lower surface of the phosphor layer 180 and the side surface of the light emitting device 120. The entire outer surface (Sb) of the second resin 241 may be provided as a concave curved surface. The outer surface (Sb) of the second resin 241 may have a predetermined curvature, and the center p2 of the circle of the radius of curvature of the outer surface (Sb) overlaps the first resin 250 in the vertical direction. It can be placed on a designated area. Since the inner surface of the first resin 250 is in contact with the outer surface Sb of the second resin 241, it may include a convex curved surface. When the inner surface of the first resin 250 is formed as a convex curved surface, the inner surface of the first resin 250 directs light incident through the first resin 250 toward the outer side of the phosphor layer 180. It can be reflected. The area of the inner surface of the first resin 250 or the surface facing the side of the light emitting device 120 can be increased, so that light reflection efficiency can be increased.

The second resin 241 may overlap the transparent substrate 124 and the light emitting structure 123 of the light emitting device 120 in the horizontal direction. The second resin 241 may have a gradually thinner width toward the bottom. Accordingly, the light emitted through the side of the transparent substrate 124 and the light emitting structure 123 is guided through the second resin 241 and reflected by the first resin 250, or the phosphor layer 180 ) can be incident on the outer lower surface of the.

Figure 8 is a second modified example of the light emitting device package of Figure 2. In the description of FIG. 8, the same configuration as the description disclosed above will be selectively applied with reference to the description above.

Referring to FIG. 8, the light emitting device package includes a light emitting device 120 on a substrate 201, a first resin 250 and a second resin 240 around the light emitting device 120, and the light emitting device 120. ) may include a phosphor layer 180 on the phosphor layer 180, and a resin layer 185 on the phosphor layer 180.

The resin layer 185 may be the same as or different from the top surface area of the phosphor layer 180. The resin layer 185 may be made of a transparent resin material, such as UV (Ultra violet) resin, silicone, or epoxy. The resin layer 185 may be made of a transparent resin material, such as UV (Ultra violet) resin, epoxy, or silicone. The refractive index of the resin layer 185 may be 1.8 or less, for example, in the range of 1.1 to 1.8 or 1.4 to 1.6, and may be lower than the refractive index of the diffusion agent. For example, the UV resin may use a resin (oligomer type) whose main material is urethane acrylate oligomer. For example, urethane acrylate oligomer, a synthetic oligomer, can be used.

The resin layer 185 may be free of impurities or may contain impurities such as phosphors or diffusion agents. That is, the resin layer 185 may be provided without impurities to improve luminous flux, or may further include other phosphors to improve color purity.

A third resin 245 may be included between the first resin 250 and the second resin 240. The third resin 245 is disposed outside the second resin 240 and may be in contact with the side of the phosphor layer 180. The third resin 245 may be provided in a form that surrounds the outside of the second resin 240 and may be in contact with the outer bottom and side surfaces of the phosphor layer 180. The first resin 250 may be disposed outside the third resin 245. The third resin 245 may provide a curved surface that is convex in the outward direction.

The third resin 245 may be made of the same material as the second resin 240 or may be made of a transparent material different from the second resin 240. The third resin 245 may be connected to an adhesive layer (not shown) disposed between the phosphor layer 180 and the resin layer 185.

The resin layer 185 can be removed as shown in FIG. 9. When the resin layer 185 is removed on the phosphor layer 180 as shown in FIG. 9, the third resin 245 is disposed between the first resin 250 and the second resin 240, or the phosphor layer 180 is removed. It may be adhered to the side and outer bottom of layer 180. This third resin 245 can guide the light emitted laterally through the light emitting device 120 in a direction further outward than the area of the second resin 240.

10 to 13 are diagrams explaining the manufacturing process of a light emitting device package according to an embodiment of the invention.

10 and 11, the first bonding part 121 and the second bonding part 122 of the light emitting device 120 are bonded on the first frame 221 and the second frame 223 of the substrate 201. I do it. As shown in FIG. 11, each corner of the light emitting device 120 is positioned along the first, second and third recesses (Ma, Mb, Mc) of the first frame 221 and the second frame 223. It may be located within the area of the first, second and third recesses (Ma, Mb, Mc).

When the light emitting device 120 is mounted, liquid resin 240a is dispensed on the upper surface of the light emitting device 120. At this time, the liquid resin 240a may be dispensed once or twice or more so that it can be uniformly distributed over the entire area of the light emitting device 120.

Afterwards, a phosphor layer 180 is placed on the light emitting device 120. At this time, the phosphor layer 180 may be provided in the form of a pre-manufactured film. The phosphor layer 180 is attached by pressing in the direction of the light emitting device 120. The phosphor layer 180 may be attached to the light emitting device 120 using the liquid resin 240a. At this time, most of the liquid resin 240a may be spread by pressure on the light emitting device 120 and extend to the side of the light emitting device 120. The liquid resin extending to the side of the light emitting device 120 may be hardened to become a second resin. At this time, the outer surface of the second resin may be formed as a curved surface with a predetermined curvature and a surface tension between the phosphor layer and the side of the light emitting device.

As shown in Figure 12, the liquid resin is hardened into the second resin 240, and the liquid resin may have a convex outer surface depending on the amount dispensed and the degree of pressurization of the phosphor layer 180. Additionally, the liquid resin may be in contact with the outer lower surface of the phosphor layer 180 and the side surface of the light emitting device 120.

The second resin 240 is provided as a transparent layer on the side of the light emitting device 120 and under the outer portion of the phosphor layer 180 to guide light.

As shown in FIG. 13, the first resin 250 may be dispensed around the light emitting device 120. The first resin 240 may be dispensed along the first frame 221 and the second frame 223 of the substrate 201 outside the light emitting device 120. The first resin 250 can move to the side of the phosphor layer 180 along the second resin 240. The first resin 250 may extend to the area between the lower surface of the light emitting device 120 and the substrate 201 by capillary action.

Afterwards, the process of forming the optical lens is carried out and cut into unit package sizes.

FIG. 14 is another example of the light emitting device package of FIG. 1, showing a substrate image without an optical lens.

Referring to FIG. 14, the light emitting device 120A may be a vertical LED chip. The light emitting device 120A may be placed on the second frame 223, and the upper first bonding portion 121A may be connected to the first frame 221 and the wire 103. The lower part of the light emitting device 120A may be electrically connected to the second frame 223.

A phosphor layer 180 may be disposed on the light emitting device 120A. At this time, the phosphor layer 180 may be disposed on an area excluding the electrode area Ps where the first bonding part 121A of the light emitting device 120 is exposed.

The second resin 240 may be disposed around the light emitting device 120A. At this time, the second resin 240 may be disposed along the outer lower surface of the phosphor layer 180. A portion of the second resin 240 may be exposed to the outside of the phosphor layer 180 and may be disposed on the electrode area Ps.

The first resin 250 may cover a portion of the first frame 221 and the second frame 223 and may cover a perimeter of the second resin 240 on the outside of the light emitting device 120A.

The first gap area 214 may be provided in the shape of a groove bent one or more times between the first frame 221 and the second frame 223. The third frame on the substrate can be removed.

<Second Embodiment>

FIG. 15 is a perspective view of a light emitting device package according to a second embodiment of the invention, FIG. 16 is a cross-sectional view along the B-B side of the light emitting device package of FIG. 15, and FIG. 17 is a detailed view of the light emitting device package of FIG. 16.

15 to 17, the light emitting device package 200 according to the second embodiment may include a light emitting device 30, a first resin 20, a second resin 40, and a phosphor layer 20. You can.

The light emitting device 30 may be a semiconductor device, for example, an LED chip. As another example, the semiconductor device may include an electronic device such as a light receiving device, and the light emitting device may be a device that emits UV light or a device that emits blue light. The light emitting device 30 may be a flip-chip type device. The flip chip type device can emit light in six directions.

With reference to FIG. 25, an example of a light emitting device will be described. As shown in FIG. 25, the light emitting device 30 may include a transparent substrate 624, a light emitting structure 623, a first electrode 37, and a second electrode 38. A transparent substrate 624 may be disposed under the light emitting structure 33. The transparent substrate 624 may be selected from a group including sapphire substrate (Al2O3), SiC, GaAs, GaN, ZnO, Si, GaP, InP, and Ge.

The light emitting structure 623 is disposed between the first conductive semiconductor layer 623a, the second conductive semiconductor layer 623c, and the first conductive semiconductor layer 623a and the second conductive semiconductor layer 623c. It may include an active layer 623b. The light emitting structure 623 may be provided as a compound semiconductor. The light emitting structure 623 may be provided as, for example, a Group 2-6 or Group 3-5 compound semiconductor. For example, the light emitting structure 33 includes at least two elements selected from aluminum (Al), gallium (Ga), indium (In), phosphorus (P), arsenic (As), and nitrogen (N). It can be. The first and second conductive semiconductor layers 623a and 633c may be implemented with at least one of group 3-5 or group 2-6 compound semiconductors. The first and second conductive semiconductor layers are, for example, a semiconductor material having a composition formula of In _x Al _y Ga _{1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x+y≤1) It can be formed as For example, the first and second conductive semiconductor layers 623a and 623c are at least one selected from the group including GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, etc. may include.

The first conductive semiconductor layer 623a may be an n-type semiconductor layer doped with an n-type dopant such as Si, Ge, Sn, Se, or Te. The second conductive semiconductor layer 623c may be a p-type semiconductor layer doped with a p-type dopant such as Mg, Zn, Ca, Sr, or Ba. For example, the active layer 623b may be implemented with at least one of group 3-5 compound semiconductors or group 2-6 compound semiconductors. When the active layer 623b is implemented as a multi-well structure, the active layer 623b may include a plurality of well layers and a plurality of barrier layers arranged alternately, In _x Al _y Ga _{1 -x- y} N It may be disposed as a semiconductor material having a composition formula of (0≤x≤1, 0≤y≤1, 0≤x+y≤1). For example, the active layer 33b includes InGaN/GaN, GaN/AlGaN, AlGaN/AlGaN, InGaN/AlGaN, InGaN/InGaN, AlGaAs/GaAs, InGaAs/GaAs, InGaP/GaP, AlInGaP/InGaP, InP/GaAs. It may include at least one selected from the group.

The first electrode 37 and the second electrode 38 may be disposed on one side of the light emitting structure 623. The first electrode 37 and the second electrode 38 may be disposed at a distance from each other. The first electrode 37 may include a first pad electrode 622 and a first branch electrode 626. The first electrode 37 may be electrically connected to the first conductive semiconductor layer 623a. The second electrode 38 may include a second pad electrode 621 and a second branch electrode 625. The second electrode 38 may be electrically connected to the first conductive semiconductor layer 623c. The first electrode 37 and the second electrode 38 may be formed in a single-layer or multi-layer structure. For example, the first electrode 37 and the second electrode 38 may be ohmic electrodes. For example, the first electrode 37 and the second electrode 38 include ZnO, IrOx, RuOx, NiO, RuOx/ITO, Ni/IrOx/Au, and Ni/IrOx/Au/ITO, Ag, Ni , Cr, Ti, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, or an alloy of two or more of these materials.

A protective layer may be further provided on the light emitting structure 33. The protective layer may be provided on the upper surface of the light emitting structure 33. The protective layer may be provided on the side of the light emitting structure 33. The protective layer may be provided so that the first pad electrode 622 and the second pad electrode 621 are exposed. The protective layer may be selectively provided on the periphery and bottom of the transparent substrate 624. By way of example, the protective layer may be provided as an insulating material. For example, the protective layer may be formed of at least one material selected from the group including SixOy, SiOxNy, SixNy, and AlxOy.

In the light emitting device 30 according to the invention, light generated in the active layer 623b can be emitted in the six-sided direction of the light emitting device 30. Light generated in the active layer 623b may be emitted in six directions through the top, bottom, and four sides of the light emitting device 30.

Referring to FIG. 16, in the light emitting device package 200, the first resin 10 may be disposed on the side of the light emitting device 30. The first resin 10 may be a reflective member or a reflective resin member, and will be referred to the first embodiment. The first resin 10 reflects light from the side of the light emitting device 30, and the reflected light may flow back into the light emitting device 30 or be emitted from one side of the phosphor layer 20. The first resin 10 may include, but is not limited to, at least one of epoxy resin, polyimide resin, urea resin, and acrylic resin.

The first resin 10 may include a reflective material. For example, the reflective material may be TiO ₂ or SiO ₂ . The lower surface of the first resin 10 may be disposed on the same plane as the lower surfaces of the first electrode 37 and the second electrode 38 of the light emitting device 30. The first resin 10 may include a first side close to the side of the light emitting device 30 and a second side facing the first side. The first side or the second side may have a curvature (R) with respect to one side of the first resin 10. The first or second side on which the curvature R is formed may be formed continuously.

The first resin 10 may be disposed around and below the light emitting device 30 . Among the inner surfaces of the first resin 10, surfaces facing the side surfaces of the light emitting device 30 may be provided as curved surfaces with a curvature (R). The curved surface may include a convex curved surface in the side direction of the light emitting device 30. The inner curved surface or inner surface of the first resin 10 may be closest to the bottom circumference of the light-emitting device 30 and may be furthest away from the upper circumference of the light-emitting device 30. As the inner curved surface of the first resin 10 approaches the phosphor layer 20, the distance from the side of the light emitting device 30 may gradually increase. The inner curved surface of the first resin 10 may be connected between the lower side of the light emitting device 30 and the lower side of the phosphor layer 20.

Light emitted from the side of the light emitting device 30 is reflected in the direction of the phosphor layer 20 through the curvature R of the inner curved surface included in the first resin 10, and light extraction efficiency can be increased.

The lower part of the first resin 10 may be disposed lower than the side of the light emitting device 30. The first resin 10 may be in contact with the side surfaces of the first electrode 37 and the second electrode 38. The first resin 10 may be in contact with the lower surface of the light emitting device 30.

The top of the first resin 10 may be placed higher than the other or top surface of the light emitting device 30. The upper surface of the first resin 10 may be disposed in the same horizontal plane as the other or upper surface of the phosphor layer 20. The first resin 10 may be disposed around the light emitting device 10 and the phosphor layer 20.

The outer side of the first resin 10 may be provided as a vertical surface, or may be provided as an inclined or curved surface.

The second resin 40 may be disposed between the inner curved surface of the first resin 10 and the side surface of the light emitting device 30. The second resin 40 may include a light-transmitting material. The second resin 40 may include an outer curved surface that contacts the inner curved surface of the first resin 10. In the second resin 40, the distance between the side of the light emitting element 30 and the outer surface of the second resin 40 is the smallest at the bottom of the side of the light emitting element 30, and the light emitting element 30 ) may be the largest at the top of the side.

The curvature of the outer curved surface of the second resin 40 may include a curvature corresponding to the curvature (R). Through the curvature R, the path through which light incident from the light emitting device 30 is emitted is shortened, so the light extraction characteristics of the light emitting device package can be improved.

The second resin 40 may be disposed between the inner surface of the first resin 10 and the side surface of the light emitting device 30. The second resin 40 may be disposed between the first resin 10 and the light emitting device 30, and may be disposed to surround the light emitting device 30. The second resin 40 may be disposed to surround the entire side of the light emitting device 30. The second resin 40 may be disposed on four sides of the light emitting device 30.

As another example, the second resin 40 may be disposed on a partial area of the lower surface of the light emitting device 30. In the process of disposing the second resin 40 on the side of the light emitting device 30, the second resin 40 is used to cover the first electrode 37 and the second electrode 38 included in the light emitting device 30. It may be placed between the side and the light emitting structure 33. The second resin 40 and the first electrode 37, second electrode 38, and light emitting structure 33 in contact with the second resin 40 do not affect each other.

The second resin 40 may have a refractive index different from that of the light emitting device 30. The second resin 40 may have a refractive index lower than that of the light emitting structure. The refractive index of the second resin 40 is lower than or equal to the refractive index of the light emitting device 30, thereby improving the extraction efficiency of light emitted to the outside from the light emitting device package.

The second resin 40 may include, but is not limited to, at least one of epoxy resin, silicone resin, polyimide resin, urea resin, and acrylic resin.

Due to the refraction of light occurring at the interface between the light emitting device 30 and the second resin 40, the light incident from the light emitting device 30 to the second resin 40 diffuses within the second resin 40. This can improve the uniformity of light intensity on the emission surface of the light emitting device package.

The phosphor layer 20 may be disposed on the light emitting device 30. The phosphor layer 20 may be disposed on the upper surface of the light emitting device 30 and the upper surface of the second resin 40. When light incident from the light emitting device 30 to the phosphor layer 20 is emitted to the outside, the phosphor layer 20 may convert the wavelength of the light emitted to the outside.

The phosphor layer 20 may be composed of a polymer resin containing a wavelength conversion material. The polymer resin may include, but is not limited to, at least one of permeable epoxy resin, silicone resin, polyimide resin, urea resin, and acrylic resin. The wavelength conversion material may be a phosphor. The wavelength conversion material may include one or more of sulfide-based, oxide-based, or nitride-based compounds, but is not limited thereto. The phosphor can be selected in various ways to implement the color desired by the user.

For example, when the light emitting device 30 emits light in the ultraviolet wavelength range, green phosphor, blue phosphor, and red phosphor may be selected as the phosphor. When the light emitting device 30 emits light in the blue wavelength range, a yellow phosphor, a combination of red phosphor and green phosphor, or a combination of yellow phosphor, red phosphor, and green phosphor may be selected.

The phosphor layer 20 may have a circular top view shape or a polygonal shape. The center area of the phosphor layer 20 may overlap the light emitting device 30 in a vertical direction, thereby improving wavelength conversion efficiency. The outer area of the phosphor layer 20 may overlap the second resin 40 in a vertical direction, thereby converting the wavelength of light emitted through the side of the light emitting device 30. The lower surface of the outer area of the phosphor layer 20 may be disposed on the same plane as the upper surface of the light emitting device 30, or may be disposed lower.

With reference to FIG. 17, the phosphor layer 20 and the first resin 10 according to the present invention will be described in detail. The center area of the phosphor layer 20 disposed on the upper surface of the light emitting device 30 may be defined as the a-area, and the outer area disposed on the upper surface of the second resin 40 may be defined as the b-area. The area a can convert the wavelength of light incident on the upper surface of the light emitting device 30. The horizontal width W1 of the area a may be equal to the horizontal width of the light emitting device 30. The horizontal width W1 of the area a may range from 650 ㎛ to 2000 ㎛. The horizontal width W1 of the area a may be determined by the horizontal width of the light emitting device 30 within the range described above. The b area may be arranged to extend from the upper surface of the second resin 40 to the outer surface of the first resin 10. The b area can convert the wavelength of light incident from the side of the light emitting device 30.

The horizontal width W2 of the b area may be in the range of 1:1 to 1:1.1 compared to the horizontal width of the upper surface of the second resin 40. The horizontal width (W2) of the b region may be in the range of 200㎛ to 600㎛. When the horizontal width (W2) of the b area is 200㎛ or more, the light conversion efficiency of the light emitting device package can be secured. When the horizontal width (W2) of the b area is 600㎛ or less, the process yield of the light emitting device package can be secured.

The first resin 10 may be disposed to surround the side of the phosphor layer 20 and the side of the light emitting device 30. The first resin 10 may be disposed surrounding the sides of the phosphor layer 20 and the second resin 40. By arranging the first resin 10 to surround the side of the phosphor layer 20, the moisture resistance and color uniformity of the light emitting device package can be improved.

The first resin 10 may include a region in contact with the side of the phosphor layer 20. The horizontal width D1 of the area where the first resin 10 and the side surfaces of the phosphor layer 20 come into contact may be in the range of 30 ㎛ to 500 ㎛. When the horizontal width D1 of the area where the first resin 10 and the side of the phosphor layer 20 come into contact is 30㎛ or more, light leaking from the side of the phosphor layer 20 is blocked, thereby changing the color of the light emitting device package. Uniformity can be improved. When the horizontal width D1 of the area where the first resin 10 and the side of the phosphor layer 20 come into contact is 500 μm or less, the process yield of the light emitting device package can be secured.

The first resin 10 may include a first region disposed on a side of the phosphor layer 20 and a second region disposed on a side of the semiconductor device 30. Through the first region, the moisture resistance of the light emitting device package is improved, and light uniformity in the light output area of the light emitting device package can be improved. The thickness L1 of the first region may range from 30 ㎛ to 300 ㎛. When the thickness (L1) of the first region is 30㎛ or more, the reliability and color uniformity of the light emitting device package can be improved. When the thickness (L1) of the first region is 300㎛ or less, the process yield of the light emitting device package can be secured. The thickness L2 of the second region may range from 130 ㎛ to 400 ㎛. When the thickness L2 of the second region is 130㎛ or more, light conversion efficiency from the side of the light emitting device package can be secured. When the thickness (L2) of the second region is 400㎛ or less, the manufacturing yield of the light emitting device package can be secured.

The thickness L1 of the first region may be smaller than the thickness L2 of the second region. The thickness L1 of the first region may range from 1:0.3 to 1:0.75 compared to the thickness L2 of the second region. When the thickness L1 of the first region is 1:0.3 or more compared to the thickness L2 of the second region, light conversion efficiency on the side of the light emitting device package can be improved. When the thickness (L1) of the first region is 1:0.75 or less compared to the thickness (L2) of the second region, the process yield of the light emitting device package can be improved.

The first resin 10 may have a step portion disposed between the first area and the second area. Since the first resin 10 is disposed surrounding the side of the phosphor layer 20 through the step portion, the efficiency of light emitted from the side of the light emitting device 30 can be improved.

Referring to Figures 18 and 20(b), the phosphor layer 20 including the recess S will be described. The phosphor layer 20 may be disposed on the light emitting device 30 . The phosphor layer 20 may be disposed on the upper surface of the light emitting device 30 and the upper surface of the second resin 40. When light incident from the light emitting device 30 to the phosphor layer 20 is emitted to the outside, the phosphor layer 20 may convert the wavelength of the light emitted to the outside. The phosphor layer 20 may include a recess S that is concave from the bottom to the top. The recess S may overlap the light emitting device 30 in a vertical direction. The recess S may be disposed concavely in the direction of the upper surface of the phosphor layer 20 with respect to the upper surface of the light emitting device 30. The depth of the recess S may be 50% or less of the thickness of the phosphor layer 20. The recess S may be located at the top of the transparent substrate. The lower surface area of the recess S may be the same as the upper surface area of the light emitting device 30 or may be arranged in a range of 100% to 120% of the upper surface area of the light emitting device 30. The phosphor layer 20 may include an area a (center area) where the top of the light emitting device 30 is disposed, and an area b (outer area) disposed on the upper surface of the second resin 40. The area a is an area where the recess S is disposed, and the area b is an area extending from the upper surface of the second resin 40 to the outer surface of the first resin 10. Referring to FIGS. 18 and 20 , the thickness (h2) of the recess (S) may range from 0.1 to 0.5 compared to the thickness (h1) of the phosphor layer 40. When the thickness h2 of the recess S is 0.1 or more compared to the thickness h1 of the phosphor layer 40, the reliability of the light emitting device package can be secured as the recess S is disposed. When the thickness (h2) of the recess (S) is 0.5 or less compared to the thickness (h1) of the phosphor layer 40, the thickness (h1) of the phosphor layer 40 disposed on the upper surface of the light emitting device 30 is secured. , the light conversion efficiency of the light emitting device package can be secured. A light emitting device 30 may be disposed within the recess S. A partial area of the transparent substrate included in the light emitting device 30 may be disposed in the recess S. As the light emitting device 30 is disposed in the recess S, the light emitting device 30 and the phosphor layer 20 are firmly disposed, thereby improving the reliability of the light emitting device package. As the recess S is disposed, the phosphor layer 20 can efficiently convert the side light of the light emitting device 30, thereby improving the light conversion efficiency of the light emitting device package.

Here, as shown in FIG. 18, the inner surfaces (Sc1, Sc2) of the second resin 40 disposed on the side of the light emitting device 30 face a curved surface having a curvature on the inner surface of the first resin 10, Light emitted laterally through the inner surfaces Sc1 and Sc2 of the second resin 40 may be reflected toward the phosphor layer 20 by the inner curved surface of the first resin 10. The upper surface of the second resin 40 may be disposed lower than the upper surface of the light emitting device 30. The outer lower portion 21 of the phosphor layer 20 may have a stepped structure from the upper surface of the light emitting device 30 and may protrude toward the lower surface of the first resin 30. The stepped structure of the outer lower part 21 may be stepped in a vertical plane, inclined, or stepped with a curvature.

A method of manufacturing a light emitting device package according to the second embodiment will be described with reference to FIGS. 19 to 23. In explaining the method of manufacturing a light emitting device package according to the invention, the content described with reference to FIGS. 16 to 18 and Detailed descriptions of overlapping configurations are omitted.

The light emitting device package manufacturing method according to the invention applies a chip scale package process. Referring to FIGS. 19 and 20, the phosphor layer 20 may be disposed. Although only one phosphor layer 20 is provided as an example, a plurality of phosphor layers 20 may be disposed.

One or more phosphor layers 20 may be disposed in a film form. The phosphor layer 20 may be composed of a polymer resin film containing a wavelength conversion material. The polymer resin may include, but is not limited to, at least one of permeable epoxy resin, silicone resin, polyimide resin, urea resin, and acrylic resin.

Referring to (a) of FIG. 20, the light emitting device 30 may be disposed on the phosphor layer 20. The light emitting device 30 may be attached to the phosphor layer 20 through a heat and pressure process. A light emitting device array may be manufactured by attaching each light emitting device 30 to a plurality of phosphor layers 20 . For example, the light emitting device 30 may be disposed on the phosphor layer 20 through a lamination process. The light emitting device 30 can be attached by heating and pressurizing the resin film through the lamination process.

The resin film constituting the phosphor layer 20 may be silicone consisting only of a coupler. The silicon consists only of a coupler, so it does not discolor or crack due to heat. By adjusting the temperature, pressing pressure, and pressing time, lamination progresses between the light emitting device 30 and the phosphor layer 20, so that they can be attached to each other. When the phosphor layer 20 is heated, its viscosity increases and it has flowability. After the light emitting element 30 is placed on the flowable phosphor layer 20 and hardened over time, it can be firmly attached.

As another example, referring to (b) of FIG. 20, the recess S may be disposed in the phosphor layer 20 overlapping the outer surface of the light emitting device 30 by adjusting the pressing time. After the light emitting device 30 is placed, if the pressing time is increased, the recess S is formed in the phosphor layer 20 by gravity caused by the light emitting device 30 and can be firmly placed. Since the light emitting device 30 is disposed within the recess S, the light emitting device 30 and the phosphor layer 20 can be placed more firmly.

Referring to FIG. 21, the second resin 40 may be disposed on the side of the light emitting device 30. The second resin 40 may be disposed on four sides of the light emitting device 30. The second resin 40 may be disposed on a partial area of the lower surface of the light emitting device 30. Through the process of disposing the second resin 40 on the side of the light emitting device 30, the second resin 40 is formed on the first electrode 37 and the second electrode 38 included in the light emitting device 30. It can be placed between the outer surface and the light emitting structure. The second resin 40, the first electrode 37, the second electrode 38, and the light emitting structure in contact with the second resin 40 do not affect each other. The second resin 40 may have a refractive index different from that of the light emitting device 30. For example, the refractive index of the second resin 40 may be less than or equal to the refractive index of the light emitting device 30. The second resin 40 may include, but is not limited to, at least one of epoxy resin, silicone resin, polyimide resin, urea resin, and acrylic resin.

The second resin 40 may be disposed through dispensing. The second resin 40 may be arranged with a vertical cross-section of the second resin 40 fixed in a triangular shape and with a curvature R formed by gravity in the direction in which the phosphor layer 20 is disposed. Through the curvature R, the path through which light incident from the light emitting device 30 is emitted is shortened, so the light extraction characteristics of the light emitting device package can be improved.

Referring to FIG. 22, the first resin 10 may be disposed around the light emitting device 30 on which the second resin 40 is disposed. The first resin 10 may include, but is not limited to, at least one of epoxy resin, polyimide resin, urea resin, and acrylic resin. The first resin 10 may include a reflective material. For example, the reflective material may be TiO ₂ or SiO ₂ , but is not limited thereto. The first resin 10 may include a curvature corresponding to the curvature R of the second resin 40.

Referring to FIG. 23, the first electrode 37 and the second electrode are arranged so that one surface of the first electrode 37 and the second electrode 38 and one surface of the first resin 10 are disposed on the same plane. The light emitting device can be packaged by polishing the first resin 10 disposed on the upper surface of (38).

Thereafter, the first resin 10 disposed on the upper surfaces of the first electrode 37 and the second electrode 38 is removed through a unit package size cutting process and an etching process, and the light emitting device package can be completed.

According to the light-emitting device package manufacturing method according to the second embodiment, the reliability of the light-emitting device package is improved, and the problem of resin discoloration and cracks occurring when the lamination process is applied can be solved. Additionally, the manufacturing yield of the light emitting device package can be improved through the light emitting device package manufacturing method according to the second embodiment.

As shown in FIG. 24, one or more light emitting device packages may be arranged on the substrate 201. The optical lens disclosed in the first embodiment may be disposed on the light emitting device package. The first and second electrodes of the light emitting device package may be electrically connected to the substrate as in the first embodiment. Since the first resin of the light emitting device package is pre-cured, it can be spaced apart from the upper surface of the substrate 201.

Figure 26 is a diagram showing an example of a light-emitting device in a light-emitting device package according to an embodiment of the invention.

Referring to FIG. 26, the light emitting device is, for example, an LED chip and can emit blue light. The light emitting device includes a transparent substrate 311 and a light emitting structure 310. The transparent substrate 311 is disposed on the light emitting structure 310, and the light emitting structure 310 includes first and second electrodes ( 337,339).

The transparent substrate 311 may be, for example, a light-transmitting, conductive, or insulating substrate. A plurality of protrusions (not shown) may be formed on the upper and/or lower surface of the transparent substrate 311, and each of the plurality of protrusions has a side cross section of at least one of a hemispherical shape, a polygonal shape, and an elliptical shape; , may be arranged in stripe form or matrix form. The protrusion can improve light extraction efficiency. Another semiconductor layer, such as a buffer layer (not shown), may be disposed between the transparent substrate 311 and the first conductive semiconductor layer 313, but is not limited thereto. The transparent substrate 311 may be removed, but is not limited to this.

The light emitting structure 310 includes a first conductive semiconductor layer 313, a second conductive semiconductor layer 315, and an active layer 314 between the first and second conductive semiconductor layers 313 and 315. Other semiconductor layers may be further disposed above and/or below the active layer 314, but are not limited thereto. For this light emitting structure 310, reference will be made to the description of the embodiment disclosed above.

The first and second electrodes 337 and 339 may be disposed below the light emitting structure 310. The first electrode 337 is in contact with the first conductive semiconductor layer 313 and is electrically connected, and the second electrode 339 is in contact with the second conductive semiconductor layer 315 and is electrically connected. You can. The first and second electrodes 337 and 339 may function as bonding parts.

The first electrode 337 and the second electrode 339 may be made of a non-transmissive metal having the characteristics of ohmic contact, adhesive layer, and bonding layer, but are not limited thereto. The first and second electrodes 337 and 339 may have a polygonal or circular bottom shape. The first electrode 337 may include a branch electrode. The second electrode 339 may include a branch electrode. The branch electrodes connected to the first and second electrodes 337 and 339 can spread the input current.

The light emitting device includes first and second electrode layers 331 and 332, a third electrode layer 333, and resin layers 334 and 335. Each of the first and second electrode layers 331 and 332 may be formed as a single layer or multiple layers and may function as a current diffusion layer. The first and second electrode layers 331 and 332 include a first electrode layer 331 disposed below the light emitting structure 310; And it may include a second electrode layer 332 disposed below the first electrode layer 331. The first electrode layer 331 spreads the current, and the second electrode layer 332 reflects the incident light. The recess 336 may expose a partial area of the light emitting structure 310 through the first and second electrode layers 331 and 332. Some areas of the light emitting structure 310 may be areas of the first conductive semiconductor layer 313.

The first and second electrode layers 331 and 332 may be formed of different materials. The first electrode layer 331 may be formed of a light-transmitting material, for example, metal oxide or metal nitride. The first electrode layer 331 is, for example, indium tin oxide (ITO), ITO nitride (ITON), indium zinc oxide (IZO), IZO nitride (IZON), indium zinc tin oxide (IZTO), and indium aluminum zinc oxide (IAZO). , it can be selectively formed from indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), and gallium zinc oxide (GZO). The second electrode layer 332 is in contact with the lower surface of the first electrode layer 331 and may function as a reflective electrode layer. The second electrode layer 332 includes metal, such as Ag, Au, or Al. The second electrode layer 332 may partially contact the lower surface of the second conductive semiconductor layer 315 when a portion of the first electrode layer 331 is removed.

As another example, the first and second electrode layers 331 and 332 may be stacked in an omni directional reflector layer (ODR) structure. The non-directional reflective structure may be formed as a stacked structure of a first electrode layer 331 having a low refractive index and a second electrode layer 332 made of a highly reflective metal in contact with the first electrode layer 331. The electrode layers 331 and 332 may be formed of, for example, a laminated structure of ITO/Ag. The omnidirectional reflection angle can be improved at the interface between the first electrode layer 331 and the second electrode layer 332.

As another example, the second electrode layer 332 may be removed and formed of a reflective layer made of another material. The reflection layer may be formed in a distributed Bragg reflector (DBR) structure, and the distributed Bragg reflection structure includes a structure in which two dielectric layers with different refractive indices are alternately arranged, for example, a SiO2 layer, It may each include a different one of a Si ₃ N ₄ layer, a TiO ₂ layer, an Al ₂ O ₃ layer, and an MgO layer. As another example, the electrode layers 331 and 332 may include both a distributed Bragg reflection structure and a non-directional reflection structure, and in this case, a light emitting device having a light reflectance of 98% or more can be provided. The light emitting device mounted in the flip manner emits light reflected from the second electrode layer 332 through the transparent substrate 311, and thus can emit most of the light in the vertical direction.

The third electrode layer 333 is disposed below the second electrode layer 332 and is electrically insulated from the first and second electrode layers 331 and 332. The third electrode layer 333 is made of metal, such as titanium (Ti), copper (Cu), nickel (Ni), gold (Au), chromium (Cr), tantalum (Ta), platinum (Pt), and tin (Sn). ), silver (Ag), and phosphorus (P). A first electrode 337 and a second electrode 339 are disposed below the third electrode layer 333.

The insulating layers 334 and 335 block unnecessary contact between the first and second electrode layers 331 and 332, the third electrode layer 333, the first and second electrodes 337 and 339, and the layers of the light emitting structure 310. The insulating layers 334 and 335 include first and second insulating layers 334 and 335. The first insulating layer 334 is disposed between the third electrode layer 333 and the second electrode layer 332. The second insulating layer 335 is disposed between the third electrode layer 333 and the first and second electrodes 337 and 339.

The third electrode layer 333 is connected to the first conductive semiconductor layer 313. The connection portion 333A of the third electrode layer 333 protrudes into the recess 336 of the first and second electrode layers 331 and 332 and the light emitting structure 310 and contacts the first conductive semiconductor layer 313. do. Here, the recess 336 may have a gradually narrower width as it approaches the substrate 311. The recess 336 may provide an inclined surface. A plurality of the recesses 336 may be arranged to be spaced apart from each other. The connection portion 333A may be disposed in each recess 336. A portion 334A of the first insulating layer 334 extends around the connection portion 333A of the third electrode layer 333 to form a third electrode layer 333, the first and second electrode layers 331 and 332, and the third electrode layer 333. The electrical connection between the two-conductivity semiconductor layer 315 and the active layer 314 is blocked. An insulating layer may be disposed on the side of the light emitting structure 310 to protect the side, but this is not limited.

The second electrode 339 is disposed below the second insulating layer 335 and passes through open areas of the first and second insulating layers 334 and 335 to form the first and second electrode layers 331 and 332. ) is contacted or connected to at least one of the The first electrode 337 is disposed below the second insulating layer 335 and is connected to the third electrode layer 333 through an open area of the second insulating layer 335. Accordingly, the protrusion 339A of the second electrode 339 is electrically connected to the second conductive semiconductor layer 315 through the first and second electrode layers 331 and 332, and the protrusion 337A of the first electrode 337 ) is electrically connected to the first conductive semiconductor layer 313 through the third electrode layer 333.

A plurality of connection parts 333A connected to the first electrode 337 can be arranged to improve current diffusion. The first and second electrodes 337 and 339 may be provided in a large area under the light emitting structure 310. The lower surfaces of the first and second electrodes 337 and 339 can be provided with a larger area on the same horizontal surface, so that the adhesion area with the bonding member can be improved. Accordingly, the bonding efficiency of the first and second electrodes 337 and 339 with the bonding member that is a conductive part can be improved.

Referring to FIG. 27, the light emitting device package according to the first embodiment of the invention may have improved luminous flux compared to the comparative example. The first embodiment is a configuration in which the second resin is disposed between the light emitting element and the first resin, as shown in FIG. 2, and the comparative example is a configuration without the second resin. It can be seen that the luminous flux of the package of the first embodiment is improved by more than 1.4% compared to the package of the comparative example.

The configurations of the first and second embodiments disclosed above may be mixed with each other. For example, the configuration of the first embodiment may be applied to the second embodiment, or the configuration of the second embodiment may be applied to the first embodiment. One or more light emitting device packages according to an embodiment of the invention may be placed on a circuit board and applied to a light source device. Additionally, the light source device may include a display device, a lighting device, a headlamp, etc. depending on the industrial field.

As an example of a light source device, a display device includes a bottom cover, a reflector disposed on the bottom cover, a light emitting module that emits light and includes a light emitting element, and a light emitting module disposed in front of the reflector and guiding the light emitted from the light emitting module forward. A light guide plate, an optical sheet including prism sheets disposed in front of the light guide plate, a display panel disposed in front of the optical sheet, an image signal output circuit connected to the display panel and supplying an image signal to the display panel, and the display panel It may include a color filter disposed in the front. Here, the bottom cover, reflector, light emitting module, light guide plate, and optical sheet may form a backlight unit. Additionally, the display device may not include a color filter and may have a structure in which light emitting elements that emit red, green, and blue light are respectively disposed.

Other examples of light source devices include headlamps, side lights, side mirror lights, fog lights, tail lights, brake lights, daytime running lights, vehicle interior lights, door scars, rear combination lamps, and backup lamps. A light emitting module including a light emitting device package disposed on a circuit board, a reflector that reflects light emitted from the light emitting module in a certain direction, for example, forward, a lens that refracts the light reflected by the reflector forward, and It may include a shade that blocks or reflects a portion of the light reflected by the reflector and directed to the lens to achieve a light distribution pattern desired by the designer.

A lighting device, which is another example of a light source device, may include a cover, a light source module, a heat sink, a power supply unit, an internal case, and a socket. Additionally, the light source device according to an embodiment of the invention may further include one or more of a member and a holder. The light source module may include a light emitting device package according to an embodiment of the invention.

The features, structures, effects, etc. described in the embodiments above are included in at least one embodiment of the invention and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, etc. illustrated in each embodiment can be combined or modified and implemented in other embodiments by a person with ordinary knowledge in the field to which the embodiments belong. Therefore, contents related to such combinations and modifications should be construed as being included in the scope of the invention.

In addition, although the above description focuses on the examples, this is only an example and does not limit the invention, and those skilled in the art will understand that the examples are not exemplified above without departing from the essential characteristics of the present embodiment. You will see that various variations and applications are possible. For example, each component specifically shown in the examples can be modified and implemented. And these variations and differences in application should be construed as being included in the scope of the invention as defined in the appended claims.

100: Light emitting device package
120,30: Light emitting device
180,20: Phosphor layer
201: substrate
210: body
221,223,225: Frame
239,249: Connection member
240,40: Second resin
245: Third resin
250,10: 1st resin
260: optical lens
281: first lower frame
283,285: 2nd and 3rd lower frames

Claims (18)

A substrate including first and second frames;
a light emitting device including a first bonding part facing the first frame and a second bonding part facing the second frame;
A phosphor layer on the light emitting device;
a first resin disposed on the upper surface of the substrate and around the light emitting device;
a second resin between the first resin and a side surface of the light emitting device; and
Comprising an adhesive layer between the phosphor layer and the light emitting device,
The outer portion of the phosphor layer protrudes further outward than the side surface of the light emitting device,
The adhesive layer has a thickness smaller than the thickness of the phosphor layer,
The first resin includes a reflective resin material and is disposed on a side of the phosphor layer,
The second resin includes a transparent resin material,
The second resin has an outer surface facing the first resin and has a curved surface,
The first and second frames include a plurality of recesses disposed along the outside of each corner of the light emitting device,
A light emitting device package wherein the plurality of recesses overlap the first and second resins and the light emitting device in a vertical direction. The method of claim 1, wherein the first resin extends between the bottom surface of the light emitting device and the substrate,
The second resin overlaps the outer lower surface of the phosphor layer in a vertical direction,
The second resin is a light emitting device package connected to the adhesive layer. delete The light emitting device package of claim 1, wherein a thickness of the second resin is greater than a thickness of the light emitting device and smaller than a thickness of the first resin. According to any one of paragraphs 1, 2, and 4,
The outer surface of the second resin includes a convex curved surface in the direction of the first resin,
A light emitting device package wherein the convex curved surface of the second resin overlaps each side of the light emitting device in a horizontal direction. The light emitting device package of claim 5, wherein the center of the circle having the convex curved surface in the second resin is disposed on an area that overlaps the light emitting device in a vertical direction. According to any one of paragraphs 1, 2, and 4,
The outer surface of the second resin includes a concave curved surface,
A light emitting device package in which the center of the circle having the concave curved surface in the second resin is disposed on an area that overlaps the second resin in a vertical direction. According to any one of paragraphs 1, 2, and 4,
The substrate includes a body made of ceramic material,
The substrate includes a third frame surrounding the first and second frames, a plurality of lower frames on the bottom of the substrate, and a third frame that penetrates the body and is connected to the first and second frames. Includes a plurality of connecting members,
A light emitting device package wherein the gap between the plurality of connecting members is greater than the length of one side of the light emitting device. According to any one of paragraphs 1, 2, and 4,
An optical lens is disposed on the substrate, the phosphor layer, and the first resin,
The optical lens is attached to the first and second frames and the upper surface of the body of the substrate,
A light emitting device package in which an outer side of the optical lens is disposed on the same vertical plane as a side of the substrate. According to any one of paragraphs 1, 2, and 4,
A transparent third resin is included between the first resin and the second resin,
The third resin is a light emitting device package in contact with a side of the phosphor layer.
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