JP2004311992A5 - - Google Patents
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- Publication number
- JP2004311992A5 JP2004311992A5 JP2004091212A JP2004091212A JP2004311992A5 JP 2004311992 A5 JP2004311992 A5 JP 2004311992A5 JP 2004091212 A JP2004091212 A JP 2004091212A JP 2004091212 A JP2004091212 A JP 2004091212A JP 2004311992 A5 JP2004311992 A5 JP 2004311992A5
- Authority
- JP
- Japan
- Prior art keywords
- energy beam
- semiconductor film
- evaluation method
- crystallinity
- visible light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 22
- 238000011156 evaluation Methods 0.000 claims 21
- 230000001678 irradiating effect Effects 0.000 claims 9
- 239000000758 substrate Substances 0.000 claims 6
- 238000003384 imaging method Methods 0.000 claims 5
- 238000002425 crystallisation Methods 0.000 claims 2
- 230000008025 crystallization Effects 0.000 claims 2
- 239000006185 dispersion Substances 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- 238000000034 method Methods 0.000 claims 2
- 229910052736 halogen Inorganic materials 0.000 claims 1
- 150000002367 halogens Chemical class 0.000 claims 1
- 229910001507 metal halide Inorganic materials 0.000 claims 1
- 150000005309 metal halides Chemical class 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
- 229910052724 xenon Inorganic materials 0.000 claims 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004091212A JP4463600B2 (ja) | 2003-03-26 | 2004-03-26 | 評価方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003085096 | 2003-03-26 | ||
| JP2004091212A JP4463600B2 (ja) | 2003-03-26 | 2004-03-26 | 評価方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004311992A JP2004311992A (ja) | 2004-11-04 |
| JP2004311992A5 true JP2004311992A5 (https=) | 2007-05-10 |
| JP4463600B2 JP4463600B2 (ja) | 2010-05-19 |
Family
ID=33478287
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004091212A Expired - Fee Related JP4463600B2 (ja) | 2003-03-26 | 2004-03-26 | 評価方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4463600B2 (https=) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4912138B2 (ja) * | 2005-12-28 | 2012-04-11 | 株式会社半導体エネルギー研究所 | 半導体装置の製造方法、半導体検査装置、及びプログラム |
| US7842520B2 (en) | 2005-12-28 | 2010-11-30 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device, semiconductor inspection device, and program including color imaging of metal silicide and calculations thereof |
| JP5498659B2 (ja) * | 2008-02-07 | 2014-05-21 | 株式会社半導体エネルギー研究所 | レーザ照射位置安定性評価方法及びレーザ照射装置 |
| JP5436499B2 (ja) * | 2011-07-09 | 2014-03-05 | スミックス株式会社 | 粒径検査方法 |
| KR102032961B1 (ko) * | 2012-10-31 | 2019-10-17 | 삼성디스플레이 주식회사 | 실리콘 기판 결정화 방법 |
| JP6353636B2 (ja) * | 2013-06-21 | 2018-07-04 | 東京エレクトロン株式会社 | 酸化チタン膜の除去方法および除去装置 |
| US9335276B2 (en) * | 2014-03-03 | 2016-05-10 | Coherent Lasersystems Gmbh & Co. Kg | Monitoring method and apparatus for control of excimer laser annealing |
| JP6096228B2 (ja) * | 2015-01-09 | 2017-03-15 | 株式会社日本製鋼所 | 半導体膜の表面ムラ検出装置、レーザアニール装置および半導体膜の表面ムラ検出方法 |
| KR101877274B1 (ko) * | 2015-05-29 | 2018-07-12 | 에이피시스템 주식회사 | 자외선 광원을 이용한 레이저 결정화 설비에 기인하는 무라 정량화 시스템 및 자외선 광원을 이용한 레이저 결정화 설비에 기인하는 무라 정량화 방법 |
| KR101939058B1 (ko) * | 2015-06-09 | 2019-01-17 | 에이피시스템 주식회사 | 레이저 결정화 설비에 기인하는 무라 정량화 시스템 및 레이저 결정화 설비에 기인하는 무라 정량화 방법 |
| JP7390214B2 (ja) * | 2020-02-28 | 2023-12-01 | 株式会社東京精密 | シリコンウエハ表面状態診断方法及び表面改質方法 |
| CN113808902B (zh) * | 2021-08-20 | 2024-09-27 | 深圳天狼芯半导体有限公司 | 一种干法刻蚀设备的腔体清理方法、装置、终端和介质 |
-
2004
- 2004-03-26 JP JP2004091212A patent/JP4463600B2/ja not_active Expired - Fee Related
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