JP2004259962A - Package for optical semiconductor element and optical semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To solve the problem in a package for an optical semiconductor element that since the wiring conductor and the metal terminal of an insulating substrate are bonded perpendicularly, high frequency signals of 10 GHz or above interfere and increase the reflection loss extremely thus causing significant deterioration of the optical semiconductor element due to the transmission length. <P>SOLUTION: The package for an optical semiconductor element comprises a metal substrate 1 having a mounting part 1a of the optical semiconductor element S in the center of the upper surface and two through holes 1b formed from the upper surface to the lower surface in the vicinity of the mounting part 1a, two metal terminals 3 inserted into respective through holes 1b and secured through a sealing material 2 such that the end part on the lower surface side projects from the through hole 1b and the electrode of the optical semiconductor element S is connected electrically with the end part on the upper surface side, and a square planar insulating substrate 5 having two linear wiring conductors 4 fixed in parallel to the opposite major surfaces from one side to the opposite side and bonded in parallel to the part of two metallic terminals 3 projecting to the lower surface side such that the opposite major surfaces are held between. <P>COPYRIGHT: (C)2004,JPO&NCIPI

Description

【００５４】
表１より、本発明の光半導体装置は、光半導体素子単体の伝送距離に対して、光半導体素子をパッケージに搭載した場合、平均で約９０％の距離を伝送可能であることが分かった。一方、比較例の光半導体装置では、平均で約８１％の距離しか伝送できないことがわかった。
【００５５】
【発明の効果】
本発明の半導体素子収納用パッケージおよび光半導体装置によれば、両主面にその一辺から対向する辺にかけて、互いに平行になるように被着された２つの直線状の配線導体を有し、２本の金属製端子の下面側に突出した部位に両主面を挟むように２つの配線導体をそれぞれ平行に接合した四角平板状の絶縁基板を具備することから、金属製端子をＬ字状に９０度折曲げて配線導体と接合する必要がなく、その結果、１０ＧＨｚ以上の高周波信号と高い場合においても、信号が全反射することはなく、信号同士が干渉して反射損失が大きくなることはない。
【００５６】
また、２本の金属製端子を絶縁基板に対しそれぞれ平行にして実装した場合においても、金属製端子の長さを等しくできるので、金属製端子の違いによってその内部の反射損失が大きくなることもない。
【００５７】
さらに、２本の金属製端子間に絶縁基板が位置することから、金属製端子間の距離が十分なものとなり金属製端子間で信号同士が干渉することもない。
【００５８】
そしてこのように反射損失が大きくなることはないので、１０ＧＨｚ以上の高周波信号の伝送損失を小さくして円滑に伝送することが可能となるとともに、光半導体素子を光半導体素子収納用パッケージに収納して光半導体装置としたとしても、光半導体素子の信号の伝送距離が光半導体素子本来の信号の伝送距離に対して大幅に短くなることはない。
【図面の簡単な説明】
【図１】（ａ）は、本発明の光半導体素子収納用パッケージに光半導体素子を実装して成る光半導体装置の実施の形態の一例の断面図であり、（ｂ）および（ｃ）は、（ａ）の蓋体を外した状態での上面図および下面図である。また、（ｄ）は、（ａ）の要部拡大側面図である。
【図２】（ａ）は、従来の光半導体装置の断面図であり、（ｂ）および（ｃ）は、（ａ）の蓋体を外した状態での上面図および下面図である。
【符号の説明】
１・・・・・・・金属基板
１ａ・・・・・・搭載部
１ｂ・・・・・・貫通孔
２・・・・・・・封止材
３・・・・・・・金属製端子
４・・・・・・・配線導体
５・・・・・・・絶縁基板
６・・・・・・・電気的接続部材
７・・・・・・・蓋体
７ａ・・・・・・第１の蓋体
７ｂ・・・・・・第２の蓋体
８・・・・・・・光ファイバ
Ｓ・・・・・・・光半導体素子[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to an optical semiconductor element storage package used for an optical semiconductor device and an optical semiconductor device using the same.
[0002]
[Prior art]
FIG. 2 (a) shows an optical semiconductor device for accommodating optical semiconductor elements such as LD (laser diode), PD (photodiode), VCSEL (surface emitting element) used in the conventional optical communication field. ), (B) and (c). 2A is a cross-sectional view of the optical semiconductor device, and FIGS. 2B and 2C are a top view and a lower surface of the optical semiconductor device of FIG. 2A with the lid removed. FIG. In FIG. 2B, only one optical semiconductor element S is shown in order to avoid complicating the drawing.
[0003]
The conventional optical semiconductor device has a mounting portion 11a for the optical semiconductor element S 'in the center of the upper surface and a through hole 11b having a diameter of 0.5 to 2 mm formed from the upper surface to the lower surface in the vicinity of the mounting portion 11a. A disc-shaped metal substrate 11 made of a metal such as an iron (Fe) -nickel (Ni) -cobalt (Co) alloy or an iron (Fe) -nickel (Ni) alloy; Is fixed via the sealing material 12 so that the end of the ferroelectric element protrudes from the through-hole 11b, and the upper end is electrically connected to the electrode of the optical semiconductor element S ′. A metal terminal 13 made of a metal such as Ni) -cobalt (Co) alloy or iron (Fe) -nickel (Ni) alloy; and an electrode mounted on the mounting portion 11a and having an electrode on the upper surface side of the metal terminal 13. Electrical parts and bonding wires An optical semiconductor element S ′ connected via the connecting means 16 and a linear wiring conductor 14 a attached to the main surface from one side to the opposite side thereof, and this wiring conductor 14 a is connected to the metal terminal 13. A rectangular flat insulating substrate 15 attached to the metal substrate 11 in parallel with a portion projecting to the lower surface side.
[0004]
When there are two metal terminals 13, one of the metal terminals 13 is usually bent at a right angle as shown in the cross-sectional view of FIG. Through a low melting point brazing material 19 with the wiring conductor 14b attached to the other main surface of the insulating substrate 15.
[0005]
Insulating glass such as soda glass or borosilicate glass is used for the sealing material 12 for fixing the metal terminals 13 to the through holes 11b of the metal substrate 11, and the metal substrate 11 and the metal terminals 13 It is electrically insulated by the sealing material 12. Further, the optical semiconductor element S ′ is brazed and fixed to the metal substrate 11 with a low melting point brazing material such as gold (Au) -tin (Sn) having a melting point of 200 to 400 ° C. via a mounting base or the like. ing.
[0006]
Further, on the upper surface of the metal substrate 11, a first lid 17a made of an Fe-Ni-Co alloy or the like is provided on the outer peripheral portion within 1 mm from the outer peripheral edge for the purpose of protecting the optical semiconductor element S '. It is fixed by welding, seam welding, brazing, or the like, and the first lid 17a is welded and joined to the upper surface of the metal substrate 11 by, for example, a YAG laser, and an optical fiber is placed at a portion facing the optical semiconductor element S '. By joining the second lid 17b to which the 18 is fixed, an optical semiconductor device as a product is obtained.
[0007]
In this optical semiconductor device, the optical semiconductor element S ′ is optically excited by a drive signal supplied from an external electric circuit (not shown), and the excited light is transmitted through an optical isolator (not shown) for preventing return light. It is used for large-capacity optical communication and the like by transmitting and receiving the data to and from the fiber 18. The adaptation range is frequently used in a transmission distance of 40 km or less and a transmission speed of 2.5 Gbps (Giga bit per second) or less.
[0008]
In recent years, demand for high-speed communication over a transmission distance of 40 km or less has been rapidly increasing, and research and development on high-speed and large-capacity transmission have been promoted. In particular, an optical semiconductor device that emits an optical signal in an optical communication device has attracted attention, and high output and high speed of an optical signal have been issues for improving transmission capacity.
[0009]
The optical output of the conventional optical semiconductor device is about 0.2 to 0.5 mW, and the driving power of the optical semiconductor element is about 5 mW. However, in a higher output optical semiconductor device, the optical output has been improved to a level of 1 mW, and the optical semiconductor element also requires a driving power of 10 mW or more. Furthermore, the transmission speed of high-frequency signals used in conventional optical semiconductor devices was about 2.4 Gbps, but has been increased to about 10 Gbps, and longer output distances and higher distances due to higher output and higher speed are required. Finally, there is a need for an optical semiconductor device package and an optical semiconductor device in which the transmission loss of a high-frequency signal of 10 GHz or more is reduced to reduce deterioration due to the length of the transmission distance of the optical semiconductor device.
[0010]
[Patent Document 1]
JP-A-8-130266
[Problems to be solved by the invention]
However, the conventional package for housing an optical semiconductor element or an optical semiconductor device using the same has not been premised on transmitting a high-frequency signal of 10 GHz or more with a driving power of 10 mW or more. For this reason, when an optical semiconductor device having an optical output of about 1 mW equipped with an optical semiconductor element driven by a driving power of 10 mW or more and a high-frequency signal of 10 GHz or more is manufactured. As described above, since one of the metal terminals 13 is used by being bent at 90 degrees in an L shape, when the frequency of the signal becomes higher, a portion bent at a right angle in the signal propagation, that is, the metal terminal 13 There has been a problem that signals are interfered with each other due to total reflection of the signal at a portion bent at a right angle and at a position where the metal terminal 13 and the wiring conductor 14b are joined, resulting in an extremely large reflection loss.
[0012]
Further, in the case where a large number of metal terminals 13 are to be mounted in parallel with the insulating substrate 15, the metal terminals 13 located at a position distant from the insulating substrate 15 are arranged at positions close to the insulating substrate 15. Since the length of the metal terminal 13 is longer than that of the metal terminal 13, there is a problem that the reflection loss of a signal in the metal terminal 13 located at a position distant from the insulating substrate 15 increases.
[0013]
Further, if the metal terminals 13 located at a position away from the insulating substrate 15 are to be inserted and joined to the same insulating substrate surface 15 as the metal terminals 13 located near the insulating substrate 15, the mounting space becomes narrow. There is a problem in that the signals interfere with each other and the reflection loss of the signal becomes extremely large.
[0014]
When the reflection loss becomes extremely large, it becomes difficult to reduce the transmission loss of a high-frequency signal of 10 GHz or more to smoothly transmit the signal. There has been a problem that the signal transmission distance of the optical semiconductor element S 'when mounted on the element storage package is greatly reduced.
[0015]
The present invention has been completed in view of the above-mentioned conventional problems, and an object of the present invention is to reduce transmission loss of a high-frequency signal of 10 GHz or more and reduce deterioration due to the length of a transmission distance of an optical semiconductor element. An optical semiconductor element package and an optical semiconductor device are provided.
[0016]
[Means for Solving the Problems]
The optical semiconductor element housing package of the present invention has a metal substrate having an optical semiconductor element mounting portion in the center of the upper surface and having two through holes formed from the upper surface to the lower surface in the vicinity of the mounting portion. The electrodes of the optical semiconductor element are electrically inserted into the upper end, respectively, which are inserted into the through holes, and are fixed via a sealing material such that the lower end is protruded from the through hole. Two metal terminals to be connected, and two linear wiring conductors attached to both main surfaces from one side to the opposite side so as to be parallel to each other, and the two metal terminals A rectangular flat plate-shaped insulating substrate in which the two wiring conductors are joined in parallel so as to sandwich the two main surfaces at a portion protruding from the lower surface side of the terminal.
[0017]
Further, an optical semiconductor device of the present invention includes an optical semiconductor element housing package having the above-described configuration, and an optical element mounted on the mounting section, the electrode of which is electrically connected to an end of the metal terminal on the upper surface side. And a semiconductor element.
[0018]
According to the semiconductor element housing package and the optical semiconductor device of the present invention, two linear wiring conductors are attached to both main surfaces so as to be parallel to each other from one side to the opposite side, Since the metal terminal is provided with a rectangular flat plate-shaped insulating substrate in which two wiring conductors are joined in parallel so as to sandwich both main surfaces at a portion protruding from the lower surface side of the metal terminal, the metal terminal is formed into an L-shape. It is not necessary to bend 90 degrees and join with the wiring conductor. As a result, even when a high frequency signal of 10 GHz or more is high, the signal is not totally reflected, and the signal does not interfere with each other to increase the reflection loss. Absent.
[0019]
Also, even when two metal terminals are mounted in parallel with the insulating substrate, the length of the metal terminals can be equalized, so that the internal reflection loss may increase due to the difference between the metal terminals. Absent.
[0020]
Further, since the insulating substrate is located between the two metal terminals, the distance between the metal terminals is sufficient, and the signals do not interfere with each other between the metal terminals.
[0021]
Since the reflection loss does not increase in this way, the transmission loss of the high-frequency signal of 10 GHz or more can be reduced and transmitted smoothly, and the optical semiconductor element can be stored in the optical semiconductor element storage package. Even when the optical semiconductor device is used, the signal transmission distance of the optical semiconductor element does not become much shorter than the signal transmission distance of the optical semiconductor element.
[0022]
BEST MODE FOR CARRYING OUT THE INVENTION
Next, an optical semiconductor element storage package and an optical semiconductor device of the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1A is a cross-sectional view showing an example of an embodiment of an optical semiconductor device in which an optical semiconductor element S is mounted on an optical semiconductor element housing package of the present invention, and FIG. 1B and FIG. 3C is a top view and a bottom view of the optical semiconductor device shown in FIG. 1A with the lid removed. FIG. 1D is an enlarged side view of a main part of FIG. 1A. In FIG. 1B, only one optical semiconductor element S is shown to avoid complicating the drawing.
[0023]
In these figures, 1 is a metal substrate, 2 is a sealing material, 3 is a metal terminal, 4a and 4b are wiring conductors, and 5 is an insulating substrate. These are mainly used for the package for housing an optical semiconductor element of the present invention. The optical semiconductor device of the present invention is mainly composed of the optical semiconductor element housing package and the optical semiconductor element S.
[0024]
The metal substrate 1 has a function of mounting the optical semiconductor element S and dissipating heat generated by the mounted optical semiconductor element S, and has a circular, circular, semicircular, semicircular, quadrangular, or quadrangular shape. And the like, a flat plate having a thickness of 0.5 to 2 mm, having a mounting portion 1a for mounting the optical semiconductor element S on the upper surface thereof, and having a diameter of 0.1 mm formed from the upper surface to the lower surface in the vicinity of the mounting portion 1a. It has two through holes 1b of 5 to 2 mm.
[0025]
Such a metal substrate 1 is made of an iron (Fe) -nickel (Ni) -cobalt (Co) alloy, an iron (Fe) -nickel (Ni) alloy, an SPC material, a copper (Cu) -tungsten (W) alloy, or the like. When the metal substrate 1 is made of, for example, an iron-nickel-cobalt alloy, the ingot is made into a predetermined shape by applying a conventionally known metal working method such as rolling or punching.
[0026]
A nickel layer having a thickness of 0.5 to 9 μm and a gold layer having a thickness of 0.5 to 5 μm having excellent corrosion resistance and excellent wettability with a brazing material are sequentially coated on the surface of the metal substrate 1 by plating. When the metal substrate 1 is attached, it is possible to effectively prevent the metal substrate 1 from being oxidized and corroded, and it is possible to satisfactorily braze the components to the metal substrate 1.
[0027]
Such a metal substrate 1 preferably has a thickness of 0.5 mm or more, and when the thickness is less than 0.5 mm, a first lid 7 a or a second lid 7 b described later is attached to the metal base 1. At the time of welding, the metal substrate 1 tends to bend and be easily deformed depending on welding conditions (temperature, etc.). If it exceeds 2 mm, the thickness of the package for storing semiconductor elements and the semiconductor device becomes unnecessarily thick, resulting in a small size. Tends to be difficult to achieve. Therefore, the thickness of the metal base 1 is preferably 0.5 to 2 mm.
[0028]
Metal terminals 3 are fixed to the two through holes 1 b formed in the metal substrate 1 via the sealing material 2, respectively. The metal terminal 3 has a function of transmitting an electric signal transmitted and received by the optical semiconductor element S to an external electric circuit (not shown). The metal terminal 3 is fixed via the sealing material 2 so that at least an end on the lower surface side of the metal substrate 1 protrudes from the through hole 1b by about 1 to 20 mm. It is electrically connected to the formed wiring conductor 4. Further, the upper end side of the metal terminal 3 is connected to the optical semiconductor element S via an electrical connection means 6 such as a bonding wire.
[0029]
It is preferable that such metal terminals 3 are arranged so as to be in parallel, and the interval between the metal terminals 3 is in the range of 0.2 to 5 mm. As described above, the metal terminals 3 are parallel to each other, and the interval between the metal terminals 3 is set to a sufficient distance of 0.2 to 5 mm, so that signals do not interfere with each other between the metal terminals 3.
[0030]
If the distance between the metal terminals 3 is less than 0.2 mm, there is a risk that signals may interfere with each other between the metal terminals 3 and the reflection loss may increase. The distance becomes unnecessarily long and the metal substrate 1 becomes large, and it tends to be difficult to reduce the size of the optical semiconductor element housing package and the optical semiconductor device.
[0031]
Such a metal terminal 3 is made of a metal such as an iron (Fe) -nickel (Ni) -cobalt (Co) alloy or an iron (Fe) -nickel (Ni) alloy. In the case of a cobalt alloy, a pin having a length of 1.5 to 22 mm and a diameter of 0.1 to 1 mm is obtained by subjecting the ingot to a conventionally known metal working method such as rolling or punching. It is manufactured in a shape.
[0032]
If the length of the portion of the metal terminal 3 protruding from the lower surface of the metal substrate 1 is less than 1 mm, it tends to be difficult to firmly join the wiring conductors 4a and 4b, which will be described later, using a brazing material or the like. When the thickness exceeds 20 mm, the length of the insulating substrate 5 becomes unnecessarily long, and it tends to be difficult to reduce the size of the package for storing the optical semiconductor element or the optical semiconductor device. Therefore, it is preferable that the metal terminal 3 is fixed via the sealing material 2 so that at least the end on the lower surface side of the metal substrate 1 protrudes from the through hole 1b by about 1 to 20 mm.
[0033]
In addition, the sealing material 2 has a function of securing an insulating interval between the metal substrate 1 and the metal terminal 3 and fixing the metal terminal 3 to the through hole 1b of the metal substrate 1. Inorganic materials such as borosilicate glass and ceramics are used.
[0034]
The metal terminal 3 has, for example, a thickness substantially equal to the thickness of the metal substrate 1, an outer diameter smaller than the diameter of the through hole 1b, and an inner diameter larger than the outer diameter of the metal terminal 3 through a glass ring. 1b, the metal terminal 3 is inserted into the ring, and then the glass is heated and melted at a predetermined temperature, whereby the outer peripheral surface of the metal terminal 3 is air-tightly fixed to the inner surface of the through hole 1b. .
[0035]
On the lower surface of the metal substrate 1, a square plate-shaped insulating substrate having two linear wiring conductors 4a and 4b attached to both main surfaces so as to be parallel to each other from one side to the opposite side. 5, two wiring conductors 4a and 4b are joined in parallel so that both main surfaces are sandwiched between portions projecting from the lower surfaces of the two metal terminals 3.
[0036]
The insulating substrate 5 has a function of supporting the wiring conductors 4a and 4b, and is made of a thermosetting resin such as a polyimide resin or an epoxy resin, an aluminum oxide sintered body, an aluminum nitride sintered body, or a mullite sintered body. -It is made of an inorganic material such as a silicon carbide-based sintered body, a silicon nitride-based sintered body, or a glass-ceramic. For example, in the case of an aluminum oxide-based sintered body, aluminum oxide, silicon oxide, magnesium oxide, and calcium oxide are used. An appropriate organic binder, a solvent, a plasticizer, and a dispersant are added to a ceramic raw material powder such as to form a slurry, and this is formed into a sheet by employing a conventionally known doctor blade method. After obtaining ceramic green sheets, these ceramic green sheets are subjected to appropriate punching, laminating, and cutting processes. It is fabricated by with obtaining raw ceramic body rim substrate 5 firing the green ceramic body at a temperature of about 1600 ° C..
[0037]
The wiring conductors 4a and 4b have a function of transmitting an electric signal between the optical semiconductor element S and an external electric circuit, and are formed linearly on both main surfaces of the insulating substrate 5 from one side to the opposite side.
[0038]
Such wiring conductors 4a and 4b are generally formed by copper plating when the insulating substrate 5 is made of a thermosetting resin such as a polyimide resin or an epoxy resin, and the insulating substrate 5 is made of an inorganic material such as an aluminum oxide sintered body. Metal paste made of tungsten, molybdenum, manganese or the like. For example, when the insulating substrate 5 is made of an aluminum oxide sintered body, a metal paste obtained by adding and mixing an organic solvent and a solvent to tungsten powder Is applied in advance to a ceramic green sheet serving as a main surface in a predetermined pattern by a screen printing method, and the ceramic green sheet is baked to be formed on the main surface of the insulating substrate 5.
[0039]
The wiring conductor 4 has a nickel layer having a thickness of 0.5 to 9 μm on its surface to prevent oxidation and to firmly connect the electrical connection means 6 such as a bonding wire and the metal terminal 3. It is preferable that a metal layer such as a gold layer having a thickness of 0.5 to 5 μm is sequentially applied by a plating method.
[0040]
The insulating substrate 5 is formed by applying a solder or a low melting point brazing material such as gold (Au) -tin (Sn) having a melting point of 200 to 400 ° C. on the surfaces of the wiring conductors 4 a and 4 b by a conventionally known screen printing method. Then, the wiring conductors 4a, 4b and the portions of the metal terminals 3 protruding from the lower surface side of the metal substrate 1 are parallel and opposed to each other on the metal substrate 1 on which the metal terminals 3 are fixed. The metal substrate 1 is fixed between the metal terminals 3 of the metal substrate 1 by heating at a temperature of 200 to 400 ° C.
[0041]
In addition, the optical semiconductor device of the present invention has a low melting point brazing material of gold (Au) -tin (Sn) via the mounting base or the like on which the optical semiconductor element S is mounted on the mounting portion 1a of the package for storing the optical semiconductor element. Thereafter, the electrode is connected to the upper end of the metal terminal 3 via an electrical connection member 6 such as a bonding wire.
[0042]
Usually, on the upper surface of the metal substrate 1, a first lid 7 a made of an Fe—Ni—Co alloy or the like is provided on the outer peripheral portion within 1 mm width from the outer peripheral edge for the purpose of protecting the optical semiconductor element S. It is fixed by laser welding, seam welding, brazing, or the like, and the first lid 7a is welded and joined to the upper surface of the metal substrate 1 by, for example, a YAG laser. The second cover 7b in which the optical fiber 8 and the optical isolator (not shown) for preventing return light are bonded to each other with a resin adhesive is bonded to the second lid 7b by YAG laser welding or the like to obtain a product. It becomes an optical semiconductor device.
[0043]
According to the optical semiconductor element housing package and the optical semiconductor device of the present invention, as described above, the two linear surfaces attached to both main surfaces from one side to the opposite side so as to be parallel to each other. A rectangular plate-shaped insulating substrate having wiring conductors 4a and 4b and joining two wiring conductors 4a and 4b in parallel with each other so as to sandwich both main surfaces at a portion protruding from the lower surface side of the two metal terminals 3 5, it is not necessary to bend the metal terminal 3 in an L-shape by 90 degrees and join it to the wiring conductor. As a result, even when the signal is as high as 10 GHz or higher, the signal is totally reflected. In other words, the reflection loss does not increase due to interference between signals.
[0044]
Even when the two metal terminals 3 are mounted parallel to the insulating substrate 5, the lengths of the metal terminals 3 can be made equal. Does not grow.
[0045]
Furthermore, since the insulating substrate 5 is located between the two metal terminals 3, the distance between the metal terminals 3 is sufficient, and there is no interference between signals between the metal terminals 3.
[0046]
Since the reflection loss does not increase in this way, the transmission loss of the high-frequency signal of 10 GHz or more can be reduced and transmitted smoothly, and the optical semiconductor element S can be stored in the optical semiconductor element storage package. Thus, even if the optical semiconductor device is used, the signal transmission distance of the optical semiconductor element S does not become significantly shorter than the signal transmission distance of the optical semiconductor element S.
[0047]
Thus, according to the optical semiconductor element package and the optical semiconductor device of the present invention, it is possible to reduce the transmission loss of a high-frequency signal of 10 GHz or more and reduce the deterioration due to the length of the transmission distance of the optical semiconductor element.
[0048]
The present invention is not limited to the above-described embodiment, and various modifications are possible without departing from the gist of the present invention. For example, FIGS. 1A to 1C 2) shows an example in which two semiconductor elements S are mounted and two through holes 1b are formed. However, three or more semiconductor elements S are mounted, and three or more through holes 1b are formed. Is also good.
[0049]
【Example】
The optical semiconductor device of the present invention was evaluated by preparing a sample for evaluation described below and a sample for comparison.
The optical semiconductor device of the present invention is configured as follows. First, an insulating substrate 5 made of a polyimide resin having a thickness of 1.0 mm, a length of 30 mm and a width of 15 mm was prepared by plating Cu patterns on the upper and lower surfaces of the wiring conductors 4 a and 4 b and the ground conductor, respectively. At this time, a ground conductor having a thickness of 0.003 mm was formed 0.15 mm from the surface. The insulating substrate 5 had a relative dielectric constant of 4.1, the wiring conductor 4 had a width of 0.7 mm, a length of 18.8 mm, and a thickness of 0.003 mm.
[0050]
Next, a metal substrate 1 having a through-hole 1a was prepared, a metal terminal 3 was inserted into the through-hole 1a, and bonded with a sealing material 2 made of glass to hermetically seal. At this time, the distance between the metal terminals 3 was set to 0.2 mm at which no signal interference occurred. Thereafter, an LD (uncooled DFB (Distributed Feed Back) -LD), which is an optical semiconductor element S, is mounted on the mounting portion 1a of the metal substrate 1 by brazing with Au-Sn, and the optical semiconductor element S and the metal terminal 3 are mounted. Were electrically connected by bonding wires 6. Further, the insulating substrate 5 was sandwiched between the metal terminals 3, and the respective wiring conductors 4a and 4b were electrically connected to the respective metal terminals 3 by soldering.
[0051]
Then, the first lid 7a made of an Fe-Ni-Co alloy is joined to the outer peripheral portion of the upper surface of the metal substrate 1 by seam welding and hermetically sealed, and thereafter, the outer peripheral end of the first lid 7a. Then, a second lid 7b in which the optical fiber 8 and the optical isolator were bonded with a resin adhesive was joined by YAG laser welding to produce an optical semiconductor device for evaluation.
[0052]
Next, a comparative sample was manufactured in a range other than the above-described evaluation sample. Specifically, a through hole having a size through which a metal terminal passes is formed in the insulating substrate and the wiring conductor, and one of the metal terminals is bent at a right angle and inserted through the through hole to insulate the metal terminal. Electrical connection was made by using solder at the place where the through hole was inserted into the wiring conductor of the board. The optical properties of the evaluation and comparison samples were measured using the optical fiber 8. Table 1 shows the results.
[0053]
[Table 1]

[0054]
From Table 1, it has been found that the optical semiconductor device of the present invention can transmit an average of about 90% of the transmission distance of the optical semiconductor element alone when the optical semiconductor element is mounted on the package. On the other hand, it was found that the optical semiconductor device of the comparative example can transmit only an average distance of about 81%.
[0055]
【The invention's effect】
According to the semiconductor element housing package and the optical semiconductor device of the present invention, two linear wiring conductors are attached to both main surfaces so as to be parallel to each other from one side to the opposite side, The metal terminal is formed into an L-shape because it has a rectangular flat plate-shaped insulating substrate in which two wiring conductors are joined in parallel so as to sandwich both main surfaces on a portion protruding from the lower surface side of the metal terminal. It is not necessary to bend 90 degrees and join with the wiring conductor. As a result, even when a high frequency signal of 10 GHz or more is high, the signal is not totally reflected, and the signal does not interfere with each other to increase the reflection loss. Absent.
[0056]
Also, even when two metal terminals are mounted in parallel with the insulating substrate, the length of the metal terminals can be equalized, so that the internal reflection loss may increase due to the difference between the metal terminals. Absent.
[0057]
Further, since the insulating substrate is located between the two metal terminals, the distance between the metal terminals is sufficient, and the signals do not interfere with each other between the metal terminals.
[0058]
Since the reflection loss does not increase in this way, the transmission loss of the high-frequency signal of 10 GHz or more can be reduced and transmitted smoothly, and the optical semiconductor element can be stored in the optical semiconductor element storage package. Even when the optical semiconductor device is used, the signal transmission distance of the optical semiconductor element does not become much shorter than the original signal transmission distance of the optical semiconductor element.
[Brief description of the drawings]
FIG. 1A is a cross-sectional view of an example of an embodiment of an optical semiconductor device in which an optical semiconductor element is mounted on an optical semiconductor element housing package of the present invention, and FIGS. (A) is a top view and a bottom view with the lid removed. (D) is an enlarged side view of the main part of (a).
FIG. 2A is a cross-sectional view of a conventional optical semiconductor device, and FIGS. 2B and 2C are a top view and a bottom view of the optical semiconductor device with the lid removed in FIG.
[Explanation of symbols]
1 Metal substrate 1a Mounting portion 1b Through hole 2 Sealing material 3 Metal terminal 4 Wiring conductor 5 Insulating substrate 6 Electrical connecting member 7 Lid 7a First lid 7b Second lid 8 Optical fiber S Optical semiconductor element

Claims (2)

A metal substrate having a mounting portion for the optical semiconductor element at the center of the upper surface and having two through holes formed from the upper surface to the lower surface in the vicinity of the mounting portion; Two metal terminals each of which is electrically connected to an electrode of the optical semiconductor element at an end on the upper surface side, the end of which is fixed via a sealing material so as to protrude from the through-hole, Two linear wiring conductors are attached to both main surfaces so as to be parallel to each other from one side thereof to the opposite side, and two metal terminals are provided at portions protruding on the lower surface side of the two metal terminals. An optical semiconductor element storage package, comprising: a rectangular flat plate-shaped insulating substrate in which two wiring conductors are joined in parallel so as to sandwich both main surfaces. 2. An optical semiconductor device housing package according to claim 1, further comprising: an optical semiconductor device mounted on the mounting portion and having an electrode electrically connected to an end of the metal terminal on the upper surface side. An optical semiconductor device characterized by the following.

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