JP2004244267A - Apparatus for manufacturing deposition plate - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an apparatus for manufacturing deposition plates, in which the treating environment is hardly contaminated with gas discharged from substrates 14 for deposition when the substrates are preheated. <P>SOLUTION: The apparatus for manufacturing the deposition plates has a treating chamber 3 in which treatments comprising heating and melting a substance 101 to be melted under a treating environment different from the external environment so as to form a molten metal 15 and then dipping the substrates 14 for deposition into the molten metal 15 and depositing the melted substance 101 on each substrate are performed, and a preheating chamber 61b which communicates with the treating chamber 3 so that the substrates 14 for deposition can be transported to the chamber 3 under such a condition that the flowage of the gas to the treating chamber 3 is interrupted by partition members 68, 69 and in which a treatment comprising preheating the substrate 14 for deposition is performed. <P>COPYRIGHT: (C)2004,JPO&NCIPI

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a deposition plate manufacturing apparatus that manufactures a deposition plate of an object to be dissolved in a processing environment different from an external environment.
[0002]
[Prior art]
2. Description of the Related Art Conventionally, a precipitation plate manufacturing apparatus that produces a precipitation plate from a melt of an object to be melted one by one has preliminarily heated the substrate surface of the deposition substrate in a predetermined processing environment, and then dipped the deposition substrate in the melt. As a result, an object to be dissolved is deposited on the substrate surface. Then, the deposition substrate after the deposition is pulled up from the molten metal, and a series of operations of peeling off the deposition plate from the deposition substrate is repeated, so that the deposition plate is manufactured one by one.
[0003]
According to the above configuration, by preheating the deposition substrate before immersion in the molten metal, the substrate can be immersed and deposited in the molten metal in a state where the characteristics of the deposition substrate are kept constant. (For example, thickness) can be reduced. Further, since the gas on the deposition substrate can be removed by preheating, it is possible to prevent a decrease in quality (for example, pinholes and smoothness) due to release of gas from the deposition substrate during immersion (for example, Patent Document 1).
[0004]
[Patent Document 1]
JP-A-2002-289544
[Problems to be solved by the invention]
However, in the above-described conventional configuration, when a gas is released from the deposition substrate by preheating, the gas contaminates the processing environment in the room where the molten metal exists. As a result, since the molten metal in the processing environment is also contaminated, even if morphologically good quality is obtained, the quality of the components of the deposited plate deteriorates during repeated production of the deposited plate. There is a problem that it is easy.
[0006]
Accordingly, the present invention provides a deposition plate manufacturing apparatus in which the processing environment is less likely to be contaminated by gas released from the deposition substrate during preheating.
[0007]
[Means for Solving the Problems]
In order to solve the above problem, the invention of claim 1 is to heat and melt a melting target under a processing environment different from an external environment to form a molten metal, and immerse a deposition substrate in the molten metal to melt the melting target. A processing chamber in which a deposition process is performed, and a preheating process in which a substrate for deposition is transferred to the processing chamber so as to be able to transport the deposition substrate while blocking the flow of gas to the processing chamber, and a process of preheating the deposition substrate is performed. And a room.
[0008]
According to the above configuration, when preheating the deposition substrate, even when a gas serving as an impurity is released from the deposition substrate, the flow of gas from the preheating chamber where preheating is performed to the processing chamber is blocked. Therefore, the processing chamber is less likely to be contaminated by the gas released from the deposition substrate. Thereby, since the precipitation treatment in the treatment chamber is performed in a high-purity treatment environment, a high-quality precipitation plate can be manufactured.
[0009]
The invention according to claim 2 is the apparatus for manufacturing a precipitation plate according to claim 1, wherein the deposition substrate is provided between the preheating chamber and the processing chamber, and temporarily stores the deposition substrate preheated in the preheating chamber. It is characterized by having a waiting room.
[0010]
According to the above configuration, the preheated deposition substrate can be temporarily stored in the standby chamber, so that it is not necessary to wait for the time required for the preheating and productivity can be improved.
[0011]
According to a third aspect of the present invention, there is provided the apparatus for manufacturing a deposition plate according to the first or second aspect, further comprising an exhaust system for exhausting a gas discharged from the deposition substrate from a room.
[0012]
According to the above configuration, the gas discharged from the deposition substrate into the chamber can be removed from the preheating chamber or the standby chamber by the exhaust system, thereby further preventing the gas from flowing from the preheating chamber or the standby chamber to the processing chamber. can do.
[0013]
According to a fourth aspect of the present invention, there is provided the apparatus for manufacturing a deposition plate according to the third aspect, wherein a process of preheating the deposition substrate is performed in the standby chamber.
[0014]
According to the above configuration, it is possible to finely adjust the preheating temperature of the deposition substrate during standby in the standby chamber and prevent the temperature from dropping.
[0015]
According to a fifth aspect of the present invention, there is provided the deposition plate manufacturing apparatus according to any one of the first to fourth aspects, wherein the preheating chamber is connected to the deposition substrate so that the deposition substrate can be transported, and the pressure is reduced to a vacuum state. It is characterized by having a control room.
[0016]
According to the above configuration, dust adhering to the deposition substrate can be sufficiently removed in the pressure adjustment chamber, so that it is possible to sufficiently prevent dust from flowing into the processing chamber.
[0017]
According to a sixth aspect of the present invention, there is provided the precipitation plate manufacturing apparatus according to any one of the first to fourth aspects, wherein the pressure of the preheating chamber is reduced to a vacuum state.
[0018]
According to the above configuration, since dust adhering to the deposition substrate can be sufficiently removed in the preheating chamber, it is possible to sufficiently prevent the dust from flowing into the processing chamber.
[0019]
BEST MODE FOR CARRYING OUT THE INVENTION
An embodiment of the present invention will be described below with reference to FIGS.
As shown in FIG. 1, the semiconductor substrate manufacturing apparatus, which is the apparatus for manufacturing a precipitation plate according to the present embodiment, reciprocates the deposition substrate 14 on the molten metal 15 so that the transport paths do not intersect with each other. As shown, it is configured to manufacture a sheet-shaped precipitation plate 2 containing Si as a main component. In addition, the semiconductor substrate manufacturing apparatus 1 is a kind of a deposition plate manufacturing apparatus, and the deposition plate manufacturing apparatus heats and melts a melting object 101 such as a semiconductor material or a metal material to form a molten metal. Means an apparatus for producing a precipitation plate 2 in the shape of a circle. Further, as the object to be melted 101, besides a semiconductor material such as Si, a metal material such as iron or titanium can be used.
[0020]
The above-described semiconductor substrate manufacturing apparatus 1 includes a vacuum vessel 4 having a double wall structure capable of isolating the inside from the external environment in a sealed state. The vacuum chamber 4 forms the closed processing chamber 3. The processing chamber 3 includes a deposition mechanism housing space 3a, a substrate moving space 3b, and a molten metal housing space 3c in a vertical direction. The deposition mechanism housing space 3a is located at the uppermost position and is formed to house a deposition mechanism 10 described later. The substrate moving space 3b is located between the deposition mechanism housing space 3a and the molten metal housing space 3c, and houses an intermediate mechanism part 60b of two below-described substrate loading / unloading mechanisms 60 provided vertically in FIG. It is formed so that. The molten metal storage space 3c is located at the lowermost position, and is formed to store a crucible device 75 described later.
[0021]
A gas supply device (not shown) that supplies an inert gas such as Ar gas and a vacuum exhaust device (not shown) that exhausts air in the processing chamber 3 are connected to the vacuum container 4. These devices supply an inert gas while reducing the pressure of the processing chamber 3 to a predetermined pressure, so that a processing environment different from the external environment appears in the processing chamber 3.
[0022]
Further, as shown in FIG. 1, a loading mechanism 60 a of the substrate loading / unloading mechanism 60 is arranged on the upstream side (left side in the drawing) of the vacuum vessel 4 in the transport direction. On the other hand, an unloading mechanism 60c of the substrate unloading and unloading mechanism 60 is arranged on the downstream side (the right side in the drawing) in the transport direction with respect to the vacuum container 4. The carry-in mechanism 60a and carry-out mechanism 60c and the above-described intermediate mechanism 60b are linearly and horizontally arranged. The loading mechanism unit 60a is provided in the partition wall 62a, the partition walls 62a, 62b, and 62c each having a rectangular vertical section, a plurality of viewing windows 67 that allow the operator to view the inside of the partition wall 62a, and mounts the deposition substrate 14 thereon. And a transfer roller 59 shown in FIG.
[0023]
The inside of the partition walls 62a, 62b, and 62c is partitioned into a pressure adjustment chamber 61a, a preheating chamber 61b, and a standby chamber 61c. These chambers 61a, 61b, and 61c are provided in this order from the upstream side in the transport direction. The pressure adjustment chamber 61a is set to a size that can accommodate six deposition substrates 14 in series. In addition, one end of the pressure adjustment chamber 61a is communicated with the outside of the apparatus at atmospheric pressure, and the other end is communicated with the preheating chamber 61b.
[0024]
A first shielding plate 63 and a second shielding plate 64 are provided at one end and the other end of the pressure adjustment chamber 61a, respectively. Each of these shielding plates 63 and 64 can be moved up and down by a cylinder device (not shown), and the raising and lowering operation is controlled by a control device (not shown). Specifically, the first shielding plate 63 is raised when the deposition substrate 14 is loaded into the pressure adjustment chamber 61a, and is lowered after the loading so as to seal one end of the pressure adjustment chamber 61a in an airtight state. On the other hand, the second shielding plate 64 is raised so as to open the other end of the second shielding plate 64 when transferring the deposition substrate 14 from the pressure adjustment chamber 61a to the preheating chamber 61b. Further, an exhaust system 66 is connected to the pressure adjustment chamber 61a via an electromagnetic valve 65. The exhaust system 66 can reduce the pressure in the pressure adjustment chamber 61a to a vacuum state. The electromagnetic valve 65 is closed when the deposition substrate 14 is loaded into the pressure adjustment chamber 61a, and is opened after the deposition substrate 14 is loaded so as to reduce the pressure in the pressure adjustment chamber 61a.
[0025]
The preheating chamber 61b communicated with the pressure adjustment chamber 61a via the second shielding plate 64 is set to a size capable of housing six deposition substrates 14 in series, similarly to the pressure adjustment chamber 61a. ing. The preheating chamber 61b is surrounded by a partition wall 62b having a double wall structure, like the vacuum vessel 4. The preheating chamber 61b has one end openable and closable by the above-described second shielding plate 64, and the other end partitioned by a first partition member 68. As shown in FIG. 2, the first partition member 68 is provided so as to form a gap large enough to allow the deposition substrate 14 transported by the transport roller 59 to pass therethrough.
[0026]
A first preheating heater 82 is provided in the preheating chamber 61b. The first preheater 82 is disposed so as to face the deposition substrate 14 located at the upstream end in the transport direction. The first preheater 82 heats the deposition substrate 14 and raises the temperature to a predetermined temperature when the deposition substrate 14 is opposed, thereby reducing the temperature difference between the molten metal 15 and the deposition substrate 14. It is designed to be constant. Note that the first preheater 82 may be a method of heating by heating a heating wire by energization, or a method of heating using electromagnetic induction. Further, as shown in FIG. 1, an exhaust system 66 is connected to the preheating chamber 61b so as to suck the impurity gas radiated from the deposition substrate 14 during preheating. The suction port of the exhaust system 66 is close to the first preheater 82 so as to efficiently suck the impurity gas.
[0027]
The preheating chamber 61b communicates with the standby chamber 61c via the first partition member 68. The standby chamber 61c is surrounded by a partition wall 62c having a double wall structure, like the vacuum container 4. Further, one end and the other end of the standby chamber 61c are partitioned by a first partition member 68 and a second partition member 69, respectively. The second partition member 69 is formed and provided so as to pass through the deposition substrate 14 and a substrate feed mechanism 70 described later. Further, the standby chamber 61c is provided with a second preheater 83 similar to the first preheater 82 described above.
[0028]
The second preheater 83 is arranged so as to face the deposition substrate 14 in a standby state. The second preheater 83 heats and raises the temperature of the deposition substrate 14 preheated by the first preheater 82 when the deposition substrate 14 is opposed to the molten metal 15 and the deposition substrate 14. And the temperature difference is kept constant in a reduced state. Note that the second preheater 83 may be used for fine adjustment of the preheating temperature of the deposition substrate 14 or used for preventing an excessive temperature drop of the deposition substrate 14 during the standby period. Is also good. Further, an exhaust system 66 is connected to the standby chamber 61c so as to suck the impurity gas diffused from the deposition substrate 14 during preheating. The suction port of the exhaust system 66 is close to the second preheater 83 so as to efficiently suck the impurity gas.
[0029]
The standby chamber 61c is communicated with the processing chamber 3 via the second partition member 69. The processing chamber 3 houses an intermediate mechanism 60 b of the substrate carrying-in / out mechanism 60. As shown in FIG. 2, the intermediate mechanism section 60b includes a first transfer table 84 and a second transfer table 85 on which the deposition substrate 14 is movably mounted. One end of the first transfer table 84 is advanced to the standby chamber 61c so as to approach the end of the transfer roller 59. The first transfer table 84 and the second transfer table 85 are arranged in series at predetermined intervals on the upstream side (left side in the figure) and downstream side (right side in the figure) of the processing chamber 3. The gap between the two transfer tables 84 and 85 is set as an attachment / detachment position A for transferring the deposition substrate 14 between the substrate carrying-in / out mechanism 60 and the deposition mechanism 10.
[0030]
As shown in FIG. 1, a substrate feed mechanism 70 is disposed on the side of the first transfer table 84. The substrate feeding mechanism 70 includes a plurality of claw members 71, a claw support member 72 that cantileverly supports these claw members 71 on a free end side, and a claw rotation that rotatably supports a base end of the claw support member 72. A mechanism 73 and a claw advancing / retracting mechanism 74 for moving the claw support member 72 and the claw member 71 in the transport direction together with the claw turning mechanism 73 are provided. The above-mentioned claw members 71 are arranged at intervals so as to sandwich both measurement surfaces of the deposition substrate 14 and have a predetermined width so as to enlarge a gap between the adjacent deposition substrates 14 to a predetermined width. It is set to the thickness of. The claw turning mechanism 73 is composed of a motor with a clutch or the like, and is configured to be capable of rotating the claw member 71 so as to be positioned above and beside the deposition substrate 14 by rotating in the forward and reverse directions. . The claw advancing / retracting mechanism 74 is made of an air cylinder or the like, and the moving distance per operation is set to the length of the deposition substrate 14.
[0031]
The substrate feeding mechanism 70 configured as described above performs an operation of gripping the deposition substrate 14 with the claw member 71 at a predetermined interval, an operation of moving the claw member 71 in the transport direction, and By repeating the operation of opening the claw member 71 and the operation of moving the claw member 71 in the direction opposite to the transport direction, the deposition substrate 14 carried into the standby chamber 61c from the preheating chamber 61b is moved to the second preheating heater 83. , And are sequentially sent to the pre-heating position and the attachment / detachment position A, and are sent from the attachment / detachment position A to the unloading mechanism 60c.
[0032]
The substrate carrying-in / out mechanisms 60 including the above-described respective mechanical units 60a to 60c are arranged side by side symmetrically with respect to the crucible device 75. As a result, the attachment / detachment position A existing in the path of the substrate carrying-in / out mechanism 60 is located at a position deviated from above the molten metal 15 in the crucible device 75. As shown in FIG. 2, the crucible device 75 supports a crucible 76 for accommodating the molten metal 15, an induction heating coil 77 disposed around a side wall of the crucible 76, and supports the crucible 76 and the induction heating coil 77. And a crucible support 78. A high-frequency power supply is connected to the induction heating coil 77 via a power cable (not shown). Thereby, the induction heating coil 77 generates an alternating magnetic field around the crucible 76 when high-frequency AC power is supplied from the high-frequency power supply, so that the surface of the crucible 76 is mainly induction-heated. I have.
[0033]
The crucible 76 is formed in a circular shape in plan view as shown in FIG. Note that the crucible 76 may be formed in a rectangular shape or an elliptical shape in plan view so that the traveling direction of the deposition substrate 14 is long. In this case, it is possible to prevent the side wall of the crucible 76 from becoming an obstacle when the deposition substrate 14 is immersed while minimizing the capacity of the molten metal 15. Further, the bottom wall of the crucible 76 is set to have a sufficiently large thickness so that a large amount of heat is transmitted from two directions, the side surface side and the bottom surface side. On the other hand, the side wall of the crucible 76 is set to a thickness less than the penetration depth of the electromagnetic induction, and a phenomenon in which falling objects such as dust become nuclei and solidify the center of the surface of the molten metal 15 by convection of the molten metal 15. Has been prevented.
[0034]
A supply mechanism 90 for supplying the object to be melted 101 is provided diagonally above the crucible device 75. The supply mechanism 90 is provided on a wall surface of the vacuum container 4 on the downstream side in the transport direction. The supply mechanism 90 includes a housing partition 91 having one end opened into the processing chamber 3, and a shield capable of sealingly separating the housing partition 91 into a supply chamber 93 on the processing chamber 3 side and a preparation chamber 94 on the atmosphere side. It has a mechanism 92, a lid member 95 capable of opening and closing the preparation chamber 94 to the atmosphere side, and a raw material transfer mechanism 96 for transferring the object to be melted 101 from the preparation chamber 94 to above the crucible 76.
[0035]
A first viewing window 4 a of the vacuum container 4 is arranged on a side of the supply mechanism 90. The first viewing window 4a is provided with a first image pickup device 8a such as a CCD camera. The first imaging device 8a is set so as to capture an image of the molten metal 15 together with the crucible 76, and is capable of detecting the surface level of the molten metal 15 based on an imaging signal. A second viewing window 4b is disposed on the downstream side wall surface of the vacuum container 4 in the transport direction. The second viewing window 4b is provided with a second imaging device 8b such as a CCD camera. The second imaging device 8b is set so as to capture an area viewed from the opposite direction that cannot be captured by the first imaging device 8a.
[0036]
The operations of the imaging devices 8a and 8b and the supply mechanism 90 are controlled by a control device (not shown). The control device includes an arithmetic unit, a storage unit, an input / output unit, and the like, and has various functions for controlling each mechanism of the semiconductor substrate manufacturing apparatus 1 individually and in conjunction with each other. Specifically, the function of detecting the level of the molten metal 15 based on the brightness of the image signal from the first imaging device 8a or the supply of the molten metal 15 so that the detected level is a predetermined reference level is provided. The mechanism 90 has a function of controlling the supply timing and supply amount of the dissolving object 101 in the mechanism 90 and the like.
[0037]
Further, above the crucible device 75, a deposition mechanism 10 is provided as shown in FIG. The deposition mechanism 10 moves the substrate gripping mechanism 51 (described later) between the attachment / detachment position A and the molten metal 15 of the crucible device 75 in a direction orthogonal to the carrying-in / out direction (transport direction). The mounted deposition substrate 14 is immersed in a molten metal 15 and pulled up. More specifically, the deposition mechanism 10 holds the other surface of the deposition substrate 14 (the opposite surface to the substrate surface 14a) at the attachment / detachment position A via the substrate holding mechanism 51 so as to be attachable / detachable from below. In the immersion position, the tip holding the deposition substrate 14 in a posture inclined with respect to the turning radial direction is turned around the turning axis so that the other surface of the deposition substrate 14 is positioned above, The deposition substrate 14 is moved in the cross direction together with the substrate gripping mechanism 51. Note that the turning radius direction is a longitudinal direction of the turning member 50 that turns around the turning shaft 49 in FIG.
[0038]
The deposition mechanism 10 includes a horizontal movement mechanism 13, a vertical movement mechanism 11 horizontally movable by the horizontal movement mechanism 13, a rotating mechanism 12 vertically movable by the vertical movement mechanism 11, and a substrate gripping mechanism 51. have. The horizontal moving mechanism 13 is provided on the upper surface of the partition wall 62c surrounding the standby chamber 61c. As shown in FIG. 3, the horizontal moving mechanism 13 includes a horizontal transport unit 16 that is orthogonal to the transport direction, and a horizontal drive unit 17 that drives the horizontal transport unit 16. The horizontal transfer section 16 is disposed in the horizontal direction, and one end is disposed outside the vacuum vessel 4 and the other end is disposed in the processing chamber 3 in the vacuum vessel 4.
[0039]
As shown in FIG. 2, the horizontal transport section 16 includes a screw shaft member 18 having a thread groove formed on the entire peripheral surface, a block member 19 screwed to the screw shaft member 18, and a lower surface of the block member 19. And a connecting member 21 provided on the upper surface of the block member 19 and connected to the vertical moving mechanism 11. Further, as shown in FIG. 3, the horizontal transport section 16 has a connection shaft member 24 connected to one end of the screw shaft member 18 and extending outside the vacuum vessel 4. The horizontal drive unit 17 is connected to one end of the connection shaft member 24. The horizontal drive unit 17 has a horizontal drive device 23 such as a servomotor that can rotate forward and backward at an arbitrary rotation speed and can stop at a predetermined holding force. The horizontal driving device 23 enables the vertical movement mechanism 11 to move to an arbitrary position in the horizontal direction by rotating the screw shaft member 18 forward and reverse via the connection shaft member 24.
[0040]
As shown in FIG. 2, the vertical movement mechanism 11 horizontally moved by the horizontal movement mechanism 13 includes a vertical transport unit 30 arranged in a vertical direction, and a vertical drive unit provided at an upper end of the vertical transport unit 30. 31. The vertical transport unit 30 includes a screw shaft member (not shown) having a screw groove formed on the entire peripheral surface, a block member 33 screwed to the screw shaft member, and a front surface (right side in the drawing) to which the turning mechanism 12 is connected. And a rail member 34 that supports the back surface (left surface in the figure) of the block member 33 so as to be able to move up and down.
[0041]
A vertical drive unit 31 is connected to an upper end of the vertical transport unit 30. The vertical drive unit 31 has a vertical drive device 35 such as a servomotor that can rotate forward and reverse at an arbitrary rotation speed and can be stopped at a predetermined holding force, and a cooling device 36 that cools the vertical drive device 35. ing. The vertical drive device 35 is connected to the upper end of the screw shaft member, and moves the turning mechanism 12 to an arbitrary vertical position via the block member 33 and the like by rotating the screw shaft member forward and backward. Making it possible.
[0042]
The cooling device 36 houses the vertical driving device 35 so as to be isolated from the processing environment of the processing chamber 3, and stores the storage container 25 in which a cooling gas such as an inert gas of nitrogen gas or air is sealed. And a cooling pipe (not shown) that allows a cooling medium such as cooling water to flow along the wall surface of the storage container 25 by being joined to the wall surface of the storage container 25. The cooling device 36 is configured to maintain the storage environment in the storage container 25 at a predetermined temperature or less by exchanging heat with the cooling medium such as cooling water flowing through the cooling pipe. Note that the cooling device 36 may be configured to supply and discharge the cooling gas from outside the vacuum vessel 3 to the inside of the storage vessel 25 and circulate the same.
[0043]
The vertical moving mechanism 11 supports the turning mechanism 12 so as to be able to move up and down. The turning mechanism 12 includes a connection support 38 having one end surface connected to the block member 33, a turning drive unit 39 connected to the upper surface of the connection support 38, and an immersion mechanism unit 37 that is turned by the turning drive unit 39. And The turning drive unit 39 includes a turning drive device 40 such as a servomotor that can rotate at an arbitrary rotation speed and can be stopped with a predetermined holding force, and a cooling device 41 that cools the turning drive device 40. .
[0044]
The cooling device 41 is configured to exhibit the same cooling function by the same members as those of the above-described cooling device 36 having the storage container 25 and the like, similarly to the vertical drive unit 31. The turning drive device 40 in the cooling device 41 has a turning drive shaft 40 a arranged horizontally and a tip end of the turning drive shaft 40 a facing the block member 33. A drive sprocket 42a is provided on the turning drive shaft 40a. Below the driving sprocket 42a, an intermediate sprocket 42b and a turning sprocket 42c are arranged in this order. The driving sprocket 42a is connected to the intermediate sprocket 42b via the first chain 43a, and the intermediate sprocket 42b is connected to the turning sprocket 42c via the second chain 43b.
[0045]
The turning sprocket 42 c is provided on the rotating shaft member 44. The rotation shaft member 44 is supported by the first support member 45 so as to be rotatable in the horizontal direction. The first support member 45 rotatably supports the intermediate sprocket 42b. As shown in FIG. 3, the first support member 45 is hung down from the connecting support body 38 and is provided so as to protect the intermediate sprocket 42b and the chains 43a and 43b from the radiant heat of the molten metal 15.
[0046]
One end of the rotary shaft member 44 supported by the first support member 45 is connected to a rotary encoder 46. The rotary encoder 46 can detect the turning angle of the immersion mechanism 37 by detecting the rotation angle of the rotation shaft member 44. A cover member 47 is provided around the rotary encoder 46. The cover member 47 has a function as a heat shield plate for blocking radiant heat from the molten metal 15 and a function as a dustproof cover for dust floating from the molten metal 15 and adhering to the rotary encoder 46.
[0047]
On the other hand, the other end of the rotating shaft member 44 is connected to the immersion mechanism 37. The immersion mechanism 37 is provided on a second support member 48 suspended from the lower surface of the connection support 38, a turning shaft 49 rotatably supported by the second supporting member 48 in a horizontal direction, and the turning shaft 49. It has a pair of turning members 50. Substrate gripping mechanisms 51, which will be described later, are provided at the distal ends of these turning members 50. The substrate gripping mechanism 51 holds the deposition substrate 14 in a posture inclined at an angle with respect to the turning radial direction, thereby detachably holding the deposition substrate 14 in a horizontal state at the attaching / detaching position A from below. In B, the surface holding the deposition substrate 14 is positioned on the upper side. In addition, each turning member 50 may be formed of a metal material such as stainless steel having excellent mechanical strength, or may be formed of carbon having excellent heat resistance.
[0048]
As described above, the precipitation mechanism 10 including the mechanisms 11 to 13 performs the horizontal movement by the horizontal movement mechanism 13, the vertical movement by the vertical movement mechanism 11, and the turning movement by the turning mechanism 12, as shown in FIG. By combining them, the substrate holding mechanism 51 can be positioned between the attachment / detachment position A and the deposition position B, and the deposition substrate 14 is immersed in the molten metal 15 at a predetermined immersion locus. The immersion trajectory is determined by lowering the deposition substrate 14 obliquely from the upstream side in the swirling direction (the direction of the arrow) and immersing it in the molten metal 15, and then raising the substrate 14 obliquely downstream in the swirling direction. It is set so as to generate a precipitate plate 2 which is a precipitate formed by solidification and growth of the molten metal 15 in the immersed portion by pulling up.
[0049]
As shown in FIGS. 4A and 4B and FIG. 5, the deposition substrate 14 is formed of carbon in a rectangular shape in plan view. Note that the deposition substrate 14 may be formed in a circular shape, an elliptical shape, a triangular shape, a trapezoidal shape, or a polygonal shape such as a pentagon or more. The deposition substrate 14 has a substrate surface 14a (lower surface) on which the deposition plate 2 is deposited, an inverted trapezoidal grip 14b formed on the upper surface (anti-deposition surface) of the deposition substrate 14, and both side surfaces in the transport direction. And a projection 14c formed at the bottom. The above-mentioned protrusions 14c are arranged in a pair at the left and right ends of each side surface so as to reduce blurring between the protrusions 14c when the deposition substrates 14 abut against each other.
[0050]
Further, the protrusions 14c are arranged on the side surface of the grip portion 14b away from the substrate surface 14a so as not to be immersed in the molten metal 15. Further, the length of each protrusion 14c in the transport direction is set to a value larger than the protrusion length of the lateral precipitate 5 deposited on the side surface of the deposition substrate 14. These projections 14c prevent the corners of the deposition substrate 14 from being damaged by forming a gap between the adjacent deposition substrates 14 and prevent the deposition by the substrate feeding mechanism 70 in FIG. The separation work of the deposition substrate 14 is facilitated, and further, the contact between the lateral precipitates 5 deposited on the side surfaces of the deposition substrate 14 is prevented.
[0051]
Further, the gripping portion 14b having the protrusions 14c formed on the side surface is attached to and detached from the engaging portions 52a of the substrate gripping mechanism 51 described later by moving in the transporting direction. Are formed in parallel. Further, the width of the gripping portion 14b in the region from the center portion to the front of both ends is set to such a width that the gripping portion 14b comes into contact with the engaging portions 52a. Then, in a region from the both ends of the grip portion 14b to the both ends, the width is set so as to gradually decrease from the both ends to the both ends. Accordingly, when the deposition substrate 14 is transported, even if there is some deviation or error in the width direction with respect to the transport direction, the gripping portion 14b can be reliably inserted between the engaging portions 52a. It is possible.
[0052]
The projection 14c of the deposition substrate 14 may be formed on at least one side in the transport direction. The deposition substrate 14 may be inclined from the substrate surface 14a to the upper surface so that both ends of the substrate surface 14a are located inside both ends of the upper surface.
[0053]
The deposition substrate 14 is detachably held by a substrate gripping mechanism 51 provided in the immersion mechanism 37 in FIG. As shown in FIG. 5, the substrate gripping mechanism 51 integrally includes chuck portions 52 and 52 symmetrically in the left-right direction. Each of the chuck portions 52 has an engaging portion 52a formed on the lower surface so as to engage with the grip portion 14b, an annular groove portion 52b formed to receive a falling object such as dust, and a peripheral portion around the annular groove portion 52b. And a suspending portion 52c surrounded by. The engaging portions 52a are arranged symmetrically so as to insert the holding portions 14b of the deposition substrate 14. Thereby, when the deposition substrate 14 is moved in the transport direction (the carrying-in / out direction), the substrate gripping mechanism 51 inserts the gripping portion 14b of the deposition substrate 14 between the engaging portions 52a. The deposition substrate 14 can be held vertically.
[0054]
On the other hand, on the upper surface of the suspension portion 52c, two protruding portions 52d and 52d are arranged to face each other. Pin insertion holes 52e, 52e are formed in the central portions of the two projecting portions 52d, 52d. The swiveling members 50 of the immersion mechanism 37 described above are fitted between the protruding portions 52d. A carbon pin member 53 is removably inserted into the pin insertion holes 52e. The pin member 53 connects the turning members 50 to the chuck portions 52. It is made to let.
[0055]
The pin member 53 is formed so as to be shorter than the projected area of the chuck portion 52 on the deposition side so as to avoid direct radiation of radiant heat from the molten metal 15. A hardened layer 54 is formed on the surface of the pin member 53, and the mechanical strength of the surface of the pin member 53 is increased by the hardened layer 54. Wear when attaching and detaching is reduced. On the other hand, in the chuck portion 52, a hardened layer 54 is formed in the pin insertion hole 52e that contacts the pin member 53, the engaging portion 52a that contacts the deposition substrate 14, and the lower surface. Further, the mechanical strength of the contact surface of the chuck portion 52 is enhanced by the hardened layer 54, so that the abrasion at the time of attaching and detaching the pin member 53 and at the time of gripping the deposition substrate 14 is reduced.
[0056]
As a method for forming the hardened layer 54, a hardening treatment for coating the SiC film by a surface treatment method such as plasma CVD or ion plating can be mentioned. The cured layer 54 may be formed on the entire surface of the substrate gripping mechanism 51. In this case, the mechanical strength of the entire substrate gripping mechanism 51 can be increased. Can be hardly damaged even when subjected to an impact during transportation.
[0057]
The operation of the semiconductor substrate manufacturing apparatus 1 in the above configuration will be described.
[0058]
(Preparation and maintenance process)
The preparation / maintenance process is performed when the semiconductor substrate manufacturing apparatus 1 is brought into a state suitable for production before and after production of the precipitation plate 2 is started. That is, as shown in FIG. 2, inspection of the crucible device 75, replacement of the crucible 76, and inspection of each mechanism in the vacuum vessel 4 are performed. In addition, during the inspection of the crucible device 75, the remaining amount of the object to be melted 101 stored in the storage box 72 of the supply mechanism 71 is confirmed, and replenishment is performed so as to be an appropriate amount. When the inspection or replacement of each device is completed, the vacuum vessel 4 is sealed. After the air is evacuated by operating a vacuum evacuation device (not shown), an inert gas such as Ar gas is supplied, so that a processing environment different from the external environment is formed in the processing chamber 3.
[0059]
Thereafter, high-frequency AC power is supplied to the induction heating coil 77, and a high-frequency magnetic field is generated around the crucible 76. As a result, when a strong magnetic field is applied to the surface side of the side wall of the crucible 76, mainly the surface side of the side wall is heated by induction heating, and the amount of heat on the surface side is conducted inward. Will be. A large amount of heat is transmitted from the two sides of the crucible 76, the side surface and the bottom surface, and the object to be melted 101 is evenly heated by this amount of heat. After the molten metal 15 is formed, the side and lower surfaces of the molten metal 15 are continuously heated with a large amount of heat, so that the entire molten metal 15 is maintained at a uniform temperature.
[0060]
When the molten metal 15 is formed, the temperature of the storage chambers 6 and 7 in the vacuum vessel 4 becomes high, and high-temperature radiant heat is released from the molten metal 15. At this time, a part of the radiant heat proceeds toward the precipitation mechanism 10, but the radiant heat that proceeds to the turning drive unit 39 of the precipitation mechanism 10 causes the connection support 38 to function as a heat shielding plate. Thus, the turning drive unit 39 is not directly irradiated. Further, the radiant heat that proceeds to the driving force transmission mechanism such as the first chain 43a of the deposition mechanism 10 does not directly radiate the driving force transmission mechanism because the first support member 45 functions as a heat shielding plate. Further, the radiant heat which proceeds to the rotary encoder 46 of the deposition mechanism 10 does not directly radiate the rotary encoder 46 because the cover member 47 functions as a heat shielding plate. As a result, the internal equipment of the deposition mechanism 10 is prevented from being thermally degraded due to direct radiation of radiant heat.
[0061]
Further, the vertical driving unit 31 and the turning driving unit 39 accommodate the vertical driving device 35 and the turning driving device 40 in the storage containers 25 and 25 of the cooling devices 36 and 41, respectively, so that the processing chamber 3 can be operated under a high temperature environment. Driving is avoided. Therefore, in these driving units 31 and 39, occurrence of a failure due to heat is sufficiently prevented. The cooling devices 36 and 41 maintain the storage environment in the storage container 25 at a predetermined temperature or less by exchanging heat with a cooling medium such as cooling water flowing through a cooling pipe. Therefore, even if the cooling gas leaks due to breakage of the storage container 25 or the like while the melting target is being heated and melted, the cooling water does not contact the molten metal 15 to cause a serious failure.
[0062]
(Substrate transfer process)
When the preparation for the production is completed by forming the molten metal 15 in the desired processing environment as described above, as shown in FIG. 1, the substrate loading / unloading mechanism arranged vertically symmetrically with the crucible device 75 as the center. At 60, a transport operation of the deposition substrate 14 is performed. In the following description, the transfer operation of one substrate carrying-in / out mechanism 60 will be described for convenience of description.
[0063]
Specifically, first, at a substrate setting position (not shown) arranged on the upstream side of the substrate loading / unloading mechanism 60, a plurality of deposition substrates 14 such as six are set in series with the substrate surface 14a facing upward. . Thereafter, the evacuation operation of the pressure adjustment chamber 61a is stopped by closing the electromagnetic valve 65, and the one end of the pressure adjustment chamber 61a is opened by raising the first shielding plate 63. Then, the deposition substrate 14 is loaded into the pressure adjustment chamber 61a in a serial state by a transport device such as a transport roller (not shown).
[0064]
When the above-mentioned deposition substrates 14 are set or carried in, an impact may be applied to each deposition substrate 14 due to contact or collision between the adjacent deposition substrates 14. At this time, since a pair of projections 14c are formed on the front and rear side surfaces of the deposition substrate 14 in the transport direction, contact or collision during setting or transport does not affect the projections 14c 14c of the deposition substrates 14 It will happen together. Thereby, breakage such as chipping of a corner portion due to impact applied to a corner portion of the deposition substrate 14 can be prevented. As a result, since the substrate surface 14a of the deposition substrate 14 maintains the original shape, a deposition plate having a predetermined shape can be reliably obtained.
[0065]
When all the deposition substrates 14 are carried into the pressure adjustment chamber 61a, the first shielding plate 63 is lowered, and both ends of the pressure adjustment chamber 61a are closed. Thereafter, the electromagnetic valve 65 is opened, and the pressure adjustment chamber 61a is evacuated by the exhaust system 66. Thus, dust adhering to the deposition substrate 14 is removed. The other end of the pressure adjustment chamber 61a is opened by the rise of the second shielding plate 64, so that the pressure adjustment chamber 61a and the preheating chamber 61b communicate with each other.
[0066]
Thereafter, when the deposition substrates 14 in the pressure adjustment chamber 61a are transported to the pressure adjustment chamber 61a and all of them are carried into the pressure adjustment chamber 61a, the second shielding plate 64 is lowered, and the pressure adjustment chamber 61a and the preheating chamber 61b are moved. Is isolated. In the pressure adjustment chamber 61a, the loading operation of the deposition substrate 14 from the substrate setting position described above is performed.
[0067]
In the preheating chamber 61b, the deposition substrate 14 located at the head (most upstream side) in the transport direction is opposed to the first preheating heater 82. As a result, when the power for preheating is supplied to the preheating heater 82, the leading deposition substrate 14 is heated by the preheating heater 82 to a predetermined preheating temperature. Further, when the deposition substrate 14 is heated, dust may be scattered from the deposition substrate 14 or a gas in the deposition substrate 14 may be released. , And acts as a pollutant in the processing environment of the processing chamber 3. However, most of these dusts and gases are sucked by the exhaust system 66 and discharged to the outside of the apparatus, and the remaining part flows to the processing chamber 3 by the first partition member 68 and the second partition of the standby chamber 61c. Blocked by member 69. As a result, the processing environment of the processing chamber 3 is hardly contaminated with dust or gas on the deposition substrate 14.
[0068]
Thereafter, the substrate feeding mechanism 70 is operated, and the preheated first deposition substrate 14 is conveyed by a distance substantially corresponding to the length dimension of the deposition substrate 14 while being sandwiched between the claw members 71. It is carried into the chamber 61c. The deposition substrate 14 carried into the standby chamber 61c is further preheated by the second preheater 83. Then, the temperature is finely adjusted to a desired preheating temperature or the temperature is prevented from lowering. Thereafter, the transport operation by the substrate feed mechanism 70 is repeatedly performed, so that the deposition substrate 14 in the preheating chamber 61b is sequentially transported while the deposition substrate 14 in the standby chamber 61c is sequentially transported in the direction of the attachment / detachment position A. It is transported to the waiting room 61c.
[0069]
While the deposition substrate 14 is being conveyed by the substrate feed mechanism 70 as described above, at the attachment / detachment position A, as shown in FIG. 3, the substrate gripping mechanism 51 has the engagement portions 52a and 52a positioned above. Standing in posture. Therefore, when the deposition substrate 14 is transported to the attachment / detachment position A, as shown in FIG. 5, the holding portion 14b of the deposition substrate 14 is inserted between the engagement portions 52a of the substrate holding mechanism 51 from the side. , And are held in a vertically engaged state. Note that even if there is blurring or an error in the width direction during this conveyance, the width of the end of the gripping portion 14b is smaller than the width between the engaging portions 52a. It is securely inserted between the joints 52a.
[0070]
As shown in FIG. 2, when the previous deposition substrate 14 was held by the substrate gripping mechanism 51 at the time of transport to the attachment / detachment position A, the current deposition substrate 14 Is extruded from the substrate holding mechanism 51 in the transport direction. Then, the extruded previous deposition substrate 14 is carried out of the vacuum vessel 4 via the second carrier 85, and the deposition plate 2 is separated from the deposition substrate 14 by a peeling mechanism (not shown). Thus, in the attachment / detachment position A, it is possible to simultaneously mount the deposition substrate 14 before deposition on the substrate gripping mechanism 51 and withdraw the deposition substrate 14 from the substrate gripping mechanism 51 after deposition. Has become.
[0071]
Further, when the deposition substrate 14 is attached and detached, the substrate surface 14a of the deposition substrate 14 immersed in the molten metal 15 is positioned on the upper side, so that the deposition substrate 14 is transported and detached in a horizontal posture. As a result, the deposition substrate 14 is attached and detached in a stable state. Further, as shown in FIG. 1, since the attachment / detachment position A is located at a position deviated from above the molten metal 15, the attachment / detachment may drop due to dust or chipping at the time of attachment / detachment, or the deposition substrate 14 may fall due to failure to attach / detach. Even in this case, these dusts and chips, and the deposition substrate 14 are difficult to enter the molten metal.
[0072]
In addition, when the deposition substrate 14 after deposition is pulled out of the substrate holding mechanism 51 or when the deposition substrate 14 is carried out of the apparatus, as shown in FIG. The parts 14c abut on each other. Therefore, even when the lateral precipitates 5 are formed on the side surfaces of the deposition substrate 14 during the immersion, the lateral precipitates 5 do not come into contact with each other. As a result, even when an external force due to vibration or impact is generated between the deposition substrates 14 at the time of removal or removal, the external force does not directly act on the projection 14c. This makes it possible to prevent a situation in which the side plate 5 is peeled off by an external force, so that the precipitation plate is separated from the deposition substrate 14 together with the side precipitate 5.
[0073]
(Deposition process)
When the attachment of the deposition substrate 14 to the substrate holding mechanism 51 is completed in the two substrate carrying-in / out mechanisms 60 as described above, as shown in FIG. The substrate holding mechanism 51 is moved in a direction perpendicular to the transport direction with the orientation kept constant, and the deposition substrate 14 held by the substrate holding mechanism 51 is immersed in the molten metal 15.
[0074]
Specifically, the substrate holding mechanism 51 is raised by the vertical movement mechanism 11 while being horizontally moved toward the deposition position B by the horizontal movement mechanism 13. When the substrate holding mechanism 51 is located above the molten metal 15, the turning mechanism 12 is operated, so that the substrate holding mechanism 51 and the deposition substrate 14 are immersed in the immersion trajectory having the turning center of the turning member 50 as a radius. Turned. The immersion trajectory can draw an arbitrary curve by a combination of the operations of the mechanisms 11, 12, and 13.
[0075]
At the time of turning, the substrate gripping mechanism 51 turns in a state where the directions of the engaging portions 52a are matched with the transport direction. Accordingly, the projection 14 c of the deposition substrate 14 does not move in the transport direction within the engaging portions 52 a, so that the deposition substrate 14 does not fall off the substrate gripping mechanism 51. The deposition substrate 14 thus held by the substrate gripping mechanism 51 is immersed in the molten metal 15 at the deposition position B while being positioned below the substrate gripping mechanism 51 as shown by the two-dot chain line in FIG. The object 101 to be melted of the molten metal 15 is deposited on the substrate surface 14a of the use substrate 14. Then, after a certain period of time, the deposition substrate 14 is pulled up from the molten metal 15, so that the deposition plate 2 having a predetermined thickness is formed on the substrate surface 14 a of the deposition substrate 14.
[0076]
The turning operation of the turning member 50 is continued until the substrate holding mechanism 51 returns to the position before the turning. At this time, since the turning angle is detected by the rotary encoder 46 in FIG. 2, the positioning of the substrate holding mechanism 51 is performed with high accuracy. Thereafter, the rotation mechanism 12 is stopped, and the vertical movement mechanism 11 and the horizontal movement mechanism 13 are operated, so that the substrate gripping mechanism 51 is returned to the attachment / detachment position A. Thereafter, in the above-described substrate transport step, when the next deposition substrate 14 is transported to the attachment / detachment position A by the substrate feeding mechanism 70, the next deposition substrate 14 is sent out by the next deposition substrate 14.
[0077]
Further, as described above, the deposition operation is completed in one substrate loading / unloading mechanism 60 and the deposition operation in the other substrate loading / unloading mechanism 60 is continued until the next deposition substrate 14 is mounted on the substrate gripping mechanism 51. Is similarly implemented. Thus, the deposition plates 2 are sequentially manufactured by one crucible device 75 while the deposition substrates 14 transported by the two substrate loading / unloading mechanisms 60 are alternately used.
[0078]
As described above, the semiconductor substrate manufacturing apparatus 1 of the present embodiment, as shown in FIGS. A processing chamber 3 in which the deposition substrate 14 is immersed in the deposition chamber 15 to deposit the object to be dissolved 101, and deposition in the processing chamber 3 while partitioning members 68 and 69 block the flow of gas into the processing chamber 3. And a preheating chamber 61b in which processing for preheating (preheating) the deposition substrate 14 is performed.
[0079]
Accordingly, even when gas serving as an impurity is released from the deposition substrate 14 when the deposition substrate 14 is preheated, the flow of the gas from the preheating chamber 61b where the preheating is performed to the processing chamber 3 is blocked. Therefore, the processing chamber 3 is not easily contaminated by the gas released from the deposition substrate 14. As a result, the deposition process in the processing chamber 3 is performed in a high-purity processing environment, so that a high-quality deposition plate 2 can be manufactured.
[0080]
Further, the semiconductor substrate manufacturing apparatus 1 of the present embodiment further includes a standby chamber 61c provided between the preheating chamber 61b and the processing chamber 3 and temporarily storing the deposition substrate 14 preheated in the preheating chamber 61b. It has been configured.
[0081]
As a result, the preheated deposition substrate 14 can be temporarily stored in the standby chamber 61c, so that it is not necessary to wait for the time required for the preheating, and the productivity can be improved.
[0082]
Further, the semiconductor substrate manufacturing apparatus 1 of the present embodiment is configured to have an exhaust system 66 for exhausting the gas released from the deposition substrate 14 from the preheating chamber 61b and the standby chamber 61c. Thus, the gas discharged from the deposition substrate 14 into the chamber can be removed from the preheating chamber 61b and the standby chamber 61c by the exhaust system 66, and thus the gas flows from the preheating chamber 61b and the standby chamber 61c into the processing chamber 3. Can be further prevented.
[0083]
Further, the semiconductor substrate manufacturing apparatus 1 of the present embodiment is configured to perform a process of preheating the deposition substrate 14 by the second preheater 83 in the standby chamber 61c. This makes it possible to fine-tune the preheating temperature of the deposition substrate 14 during standby in the standby chamber 61c, and prevent the temperature from dropping.
[0084]
Further, the semiconductor substrate manufacturing apparatus 1 of the present embodiment has a configuration in which the preheating chamber 61b is connected to the deposition substrate 14 so as to be transportable, and has a pressure adjustment chamber 61a capable of reducing the pressure to a vacuum state. As a result, dust adhering to the deposition substrate 14 can be sufficiently removed in the pressure adjustment chamber 61a, so that it is possible to sufficiently prevent dust from flowing into the processing chamber 3.
[0085]
Note that the semiconductor substrate manufacturing apparatus 1 of the present embodiment separates a preheating chamber 61b for performing a process of preheating the deposition substrate 14 and a pressure adjustment chamber 61a for allowing the deposition substrate 14 to exist in a vacuum state under a reduced pressure environment. But it is not limited to this. That is, the preheating chamber 61b may have a function of preheating and a function of reducing the pressure to a vacuum state. In this case, since both functions of preheating and decompression in a vacuum state can be exhibited in the preheating chamber 61b, the pressure adjustment chamber 61a becomes unnecessary, and equipment costs can be reduced. Furthermore, in the present embodiment, the space between the preheating chamber 61b and the standby chamber 61c, and the space between the standby chamber 61c and the processing chamber 3 are partitioned by the partition members 68 and 69 in a state of being spatially communicated, but are not limited thereto. Instead, the partition may be opened and closed in an airtight state. In this case, the flow of the gas to the processing chamber 3 can be more reliably prevented.
[0086]
【The invention's effect】
As described above, according to the present invention, when preheating the deposition substrate, even when gas serving as an impurity is released from the deposition substrate, the gas is transferred from the preheating chamber where the preheating is performed to the processing chamber. Since the flow is blocked, the processing chamber is less likely to be contaminated by the gas released from the deposition substrate. Thereby, since the precipitation treatment in the treatment chamber is performed in a high-purity treatment environment, there is an effect that a high-quality precipitation plate can be manufactured.
[Brief description of the drawings]
FIG. 1 is a schematic configuration diagram when a semiconductor substrate manufacturing apparatus is viewed in a plan view.
FIG. 2 is a schematic configuration diagram when the semiconductor substrate manufacturing apparatus is viewed from the front.
FIG. 3 is a schematic configuration diagram when the semiconductor substrate manufacturing apparatus is viewed from the side.
4A and 4B are explanatory views showing a state of a deposition substrate after deposition, wherein FIG. 4A is a plan view and FIG. 4B is a front view.
FIG. 5 is a perspective view of a substrate holding mechanism holding a deposition substrate.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Semiconductor substrate manufacturing apparatus 2 Deposition plate 3 Processing chamber 3a Deposition mechanism accommodating space 3b Substrate moving space 3c Molten accommodating space 4 Vacuum container 5 Side deposit 10 Depositing mechanism 11 Vertical moving mechanism 12 Rotating mechanism 13 Horizontal moving mechanism 14 Deposition substrate 14a Substrate surface 14b Gripping part 14c Projecting part 15 Molten metal 16 Horizontal transport unit 17 Horizontal drive unit 23 Horizontal drive unit 24 Connecting shaft member 25 Storage container 30 Vertical transport unit 31 Vertical drive unit 33 Block member 35 Vertical drive unit 36 Cooling unit 37 Immersion Mechanism unit 38 Connection support unit 39 Swivel drive unit 40 Swivel drive device 41 Cooling device 46 Rotary encoder 47 Cover member 49 Swivel shaft 50 Swivel member 51 Substrate gripping mechanism 52 Chuck unit 52a Engaging unit 60 Substrate carry-in / out mechanism 60a Carry-in mechanism unit 60b Intermediate mechanism 60c Unloading mechanism 61a Pressure adjustment chamber 61b Preheating chamber 61 Standby chamber 63 First shield plate 64 Second shield plate 65 Electromagnetic valve 66 Exhaust system 67 Viewing window 68 First partition member 69 Second partition member 75 Crucible device 76 Crucible 82 First preheater 83 Second preheater 84 First transfer Table 85 Second transfer table 90 Supply mechanism 96 Raw material transfer mechanism 101 Object to be melted

Claims (6)

A processing chamber in which a process is performed in which a melting target is heated and melted under a processing environment different from the external environment to form a melt, and a process of depositing the melting target by immersing a deposition substrate in the melt is performed.
Having a preheating chamber in which the substrate for deposition is communicablely connected to the processing chamber while the flow of gas to the processing chamber is blocked, and a process for preheating the substrate for deposition is performed. Plate manufacturing equipment. The apparatus according to claim 1, further comprising a standby chamber provided between the preheating chamber and the processing chamber, for temporarily storing the deposition substrate preheated in the preheating chamber. The apparatus according to claim 1, further comprising an exhaust system configured to exhaust a gas released from the deposition substrate from a room. 4. The apparatus for manufacturing a deposition plate according to claim 3, wherein a treatment for preheating the deposition substrate is performed in the standby chamber. 5. The apparatus for producing a deposition plate according to any one of claims 1 to 4, wherein the preheating chamber has a pressure adjustment chamber that is communicably connected to the preheating chamber and is capable of reducing the pressure to a vacuum state. The apparatus for producing a precipitation plate according to any one of claims 1 to 4, wherein the pressure of the preheating chamber can be reduced to a vacuum state.

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