JP2004293760A - Driving mechanism - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To lower the friction resistance in a sliding surface of a mechanism part to be heated at a high temperature in the vacuum condition or in the surroundings treated with an inert gas. <P>SOLUTION: This driving mechanism is operated by sliding the mechanism part heated at a high temperature in the vacuum condition or in the surroundings treated with the inert gas, and a solid lubricant of a bearing mechanism 97, which shows excellent heat resistance against the heating temperature, is provided to exist in the inner peripheral surface of a cylinder member 99 and the inner peripheral surface of a housing 98. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a drive mechanism that operates by sliding a mechanical component heated to a high temperature in a vacuum or an inert gas processing environment.
[0002]
[Prior art]
2. Description of the Related Art Conventionally, when manufacturing a precipitation plate, an object to be melted is heated and melted in a vacuum or an inert gas processing environment to form a molten metal, and a deposition substrate is transported and immersed in the molten metal by an immersion mechanism. Then, the operation of depositing the object to be dissolved on the substrate surface of the deposition substrate and then lifting the deposition substrate from the molten metal is repeated. At this time, the immersion mechanism is heated to a high temperature of 400 ° C. to 600 ° C. as a result of receiving a large amount of radiant heat from the molten metal by being located above the molten metal when the deposition substrate is immersed in the molten metal. Therefore, it is desired that the immersion mechanism be formed of a material having excellent heat resistance.
[0003]
[Problems to be solved by the invention]
By the way, carbon can be considered as a material having excellent heat resistance, but when this carbon is applied to a dipping mechanism that is heated to a high temperature in a vacuum or an inert gas processing environment, a mechanical component of the dipping mechanism is used. Large frictional resistance is generated on the sliding surface. As a result, abrasion of the sliding surface of the mechanical component progresses rapidly, resulting in a problem that updating the immersion mechanism in a short period of time causes a decrease in productivity and an increase in manufacturing cost. Furthermore, when the frictional resistance of the sliding surface increases, the operation of the immersion mechanism tends to be unstable due to torque fluctuation, and therefore, the quality of the deposition plate tends to vary due to the immersion of the deposition substrate in the unstable molten metal. There is also a problem.
[0004]
Such a problem is not limited to the case where the immersion mechanism is formed of carbon, but also occurs when the immersion mechanism is formed of another material such as ceramics. This occurs in all types of drive mechanisms that are heated.
[0005]
Accordingly, the present invention provides a drive mechanism capable of reducing the frictional resistance of the sliding surface of a mechanical component heated to a high temperature in a vacuum or an inert gas processing environment over a long period of time.
[0006]
[Means for Solving the Problems]
In order to solve the above problem, the invention according to claim 1 is a drive mechanism that operates by sliding a mechanical component heated to a high temperature in a vacuum or an inert gas processing environment, wherein the mechanical component is Wherein a solid lubricant exhibiting excellent heat resistance to the heating temperature is provided at least on the sliding surface of the mechanical component.
[0007]
According to the above configuration, since the solid lubricant exhibiting excellent heat resistance with respect to the heating temperature of the mechanical component exists on the sliding surface of the mechanical component, even if the mechanical component is operated while being heated to a high temperature, The frictional resistance of the sliding surface of the component is maintained for a long time by the solid lubricant. As a result, wear of the mechanical components can be suppressed for a long period of time, and smooth operation of the drive mechanism can be realized for a long period of time.
[0008]
The invention according to claim 2 is the drive mechanism according to claim 1, wherein the solid lubricant is molybdenum disulfide or tungsten disulfide. According to the above configuration, a solid lubricant can be obtained relatively inexpensively.
[0009]
The invention according to claim 3 is the drive mechanism according to claim 1 or 2, wherein the mechanical component is formed of carbon. According to the above configuration, the performance of the mechanical component itself can be maintained in a good state for a long period of time in a processing environment heated to a high temperature.
[0010]
The invention according to claim 4 is the drive mechanism according to claim 1 or 2, wherein the mechanical component is a ceramic bearing. According to the above configuration, the performance of the bearing can be maintained in a good state for a long period of time in a processing environment where the bearing is heated to a high temperature.
[0011]
According to a fifth aspect of the present invention, there is provided the driving mechanism according to any one of the first to fourth aspects, wherein the object to be dissolved is heated and melted in the processing environment to form a molten metal, and the deposition substrate is immersed in the molten metal. The apparatus is provided in a precipitation plate manufacturing apparatus for producing a precipitation plate of the object to be dissolved, and is provided in an immersion mechanism positioned above the molten metal at the time of producing the precipitation plate.
[0012]
According to the above configuration, the renewal period due to the wear of the drive mechanism can be extended, so that a precipitation plate of good quality can be manufactured with high productivity.
[0013]
BEST MODE FOR CARRYING OUT THE INVENTION
An embodiment of the present invention will be described below with reference to FIGS.
The drive mechanism according to the present embodiment is used in a semiconductor substrate manufacturing apparatus which is a precipitation plate manufacturing apparatus. As shown in FIG. 2, the semiconductor substrate manufacturing apparatus reciprocates the deposition substrate 14 on the molten metal 15 so that the transport paths do not intersect, thereby forming a sheet containing Si as a main component as shown in FIG. Is formed so as to produce the precipitation plate 2. In addition, the semiconductor substrate manufacturing apparatus 1 is a kind of a deposition plate manufacturing apparatus, and the deposition plate manufacturing apparatus heats and melts a melting object 101 such as a semiconductor material or a metal material to form a molten metal. Means an apparatus for producing a precipitation plate 2 in the shape of a circle. Further, as the object to be melted 101, besides a semiconductor material such as Si, a metal material such as iron or titanium can be used.
[0014]
The above-described semiconductor substrate manufacturing apparatus 1 includes a vacuum vessel 4 having a double wall structure capable of isolating the inside from the external environment in a sealed state. The vacuum chamber 4 forms the closed processing chamber 3. The processing chamber 3 includes a deposition mechanism housing space 3a, a substrate moving space 3b, and a molten metal housing space 3c in a vertical direction. The deposition mechanism housing space 3a is located at the uppermost position and is formed to house a deposition mechanism 10 described later. The substrate moving space 3b is located between the deposition mechanism accommodating space 3a and the molten metal accommodating space 3c. It is formed so that. The molten metal storage space 3c is located at the lowermost position, and is formed to store a crucible device 75 described later.
[0015]
A gas supply device (not shown) that supplies an inert gas such as Ar gas and a vacuum exhaust device (not shown) that exhausts air in the processing chamber 3 are connected to the vacuum container 4. These apparatuses supply an inert gas while reducing the pressure of the processing chamber 3 to a predetermined pressure, so that a processing environment different from the external environment, for example, filled with an inert gas, appears in the processing chamber 3. ing.
[0016]
Further, as shown in FIG. 2, a loading mechanism 60a of the substrate loading / unloading mechanism 60 is disposed on the upstream side (left side in the drawing) of the vacuum vessel 4 in the transport direction. On the other hand, an unloading mechanism 60c of the substrate unloading and unloading mechanism 60 is arranged on the downstream side (the right side in the drawing) in the transport direction with respect to the vacuum container 4. The carry-in mechanism 60a and carry-out mechanism 60c and the above-described intermediate mechanism 60b are linearly and horizontally arranged. The loading mechanism unit 60a is provided in the partition wall 62a, the partition walls 62a, 62b, and 62c each having a rectangular longitudinal section, a plurality of viewing windows 67 that allow the operator to view the inside of the partition wall 62a, and mounts the deposition substrate 14 thereon. And a transfer roller 59 shown in FIG.
[0017]
The inside of the partition walls 62a, 62b, and 62c is partitioned into a pressure adjustment chamber 61a, a preheating chamber 61b, and a standby chamber 61c. These chambers 61a, 61b, and 61c are provided in this order from the upstream side in the transport direction. The pressure adjustment chamber 61a is set to a size that can accommodate six deposition substrates 14 in series. In addition, one end of the pressure adjustment chamber 61a is communicated with the outside of the apparatus at atmospheric pressure, and the other end is communicated with the preheating chamber 61b.
[0018]
A first shielding plate 63 and a second shielding plate 64 are provided at one end and the other end of the pressure adjustment chamber 61a, respectively. Each of these shielding plates 63 and 64 can be moved up and down by a cylinder device (not shown), and the raising and lowering operation is controlled by a control device (not shown). Specifically, the first shielding plate 63 is raised when the deposition substrate 14 is loaded into the pressure adjustment chamber 61a, and is lowered after the loading so as to seal one end of the pressure adjustment chamber 61a in an airtight state. On the other hand, the second shielding plate 64 is raised so as to open the other end of the second shielding plate 64 when transferring the deposition substrate 14 from the pressure adjustment chamber 61a to the preheating chamber 61b. Further, an exhaust system 66 is connected to the pressure adjustment chamber 61a via an electromagnetic valve 65. The exhaust system 66 can reduce the pressure in the pressure adjustment chamber 61a to a vacuum state. The electromagnetic valve 65 is closed when the deposition substrate 14 is loaded into the pressure adjustment chamber 61a, and is opened after the deposition substrate 14 is loaded so as to reduce the pressure in the pressure adjustment chamber 61a.
[0019]
The preheating chamber 61b communicated with the pressure adjustment chamber 61a via the second shielding plate 64 is set to a size capable of housing six deposition substrates 14 in series, similarly to the pressure adjustment chamber 61a. ing. The preheating chamber 61b is surrounded by a partition wall 62b having a double wall structure, like the vacuum vessel 4. The preheating chamber 61b has one end openable and closable by the above-described second shielding plate 64, and the other end partitioned by a first partition member 68. As shown in FIG. 3, the first partition member 68 is provided so as to form a gap large enough to pass the deposition substrate 14 transported by the transport roller 59.
[0020]
A first preheating heater 82 is provided in the preheating chamber 61b. The first preheater 82 is disposed so as to face the deposition substrate 14 located at the upstream end in the transport direction. The first preheater 82 heats the deposition substrate 14 and raises the temperature to a predetermined temperature when the deposition substrate 14 is opposed, thereby reducing the temperature difference between the molten metal 15 and the deposition substrate 14. It is designed to be constant. Note that the first preheater 82 may be a method of heating by heating a heating wire by energization, or a method of heating using electromagnetic induction. Further, as shown in FIG. 2, an exhaust system 66 is connected to the preheating chamber 61b so as to suck the impurity gas radiated from the deposition substrate 14 during preheating. The suction port of the exhaust system 66 is close to the first preheater 82 so as to efficiently suck the impurity gas.
[0021]
The preheating chamber 61b communicates with the standby chamber 61c via the first partition member 68. The standby chamber 61c is surrounded by a partition wall 62c having a double wall structure, like the vacuum container 4. Further, one end and the other end of the standby chamber 61c are partitioned by a first partition member 68 and a second partition member 69, respectively. The second partition member 69 is formed and provided so as to pass through the deposition substrate 14 and a substrate feed mechanism 70 described later. Further, the standby chamber 61c is provided with a second preheater 83 similar to the first preheater 82 described above.
[0022]
The second preheater 83 is arranged so as to face the deposition substrate 14 in a standby state. The second preheater 83 heats and raises the temperature of the deposition substrate 14 preheated by the first preheater 82 when the deposition substrate 14 is opposed to the molten metal 15 and the deposition substrate 14. And the temperature difference is kept constant in a reduced state. Note that the second preheater 83 may be used for fine adjustment of the preheating temperature of the deposition substrate 14 or used for preventing an excessive temperature drop of the deposition substrate 14 during the standby period. Is also good. Further, an exhaust system 66 is connected to the standby chamber 61c so as to suck the impurity gas diffused from the deposition substrate 14 during preheating. The suction port of the exhaust system 66 is close to the second preheater 83 so as to efficiently suck the impurity gas.
[0023]
The standby chamber 61c is communicated with the processing chamber 3 via the second partition member 69. The processing chamber 3 houses an intermediate mechanism 60 b of the substrate carrying-in / out mechanism 60. As shown in FIG. 3, the intermediate mechanism unit 60b includes a first transfer table 84 and a second transfer table 85 on which the deposition substrate 14 is movably mounted. One end of the first transfer table 84 is advanced to the standby chamber 61c so as to approach the end of the transfer roller 59. The first transfer table 84 and the second transfer table 85 are arranged in series at predetermined intervals on the upstream side (left side in the figure) and downstream side (right side in the figure) of the processing chamber 3. The gap between the two transfer tables 84 and 85 is set as an attachment / detachment position A for transferring the deposition substrate 14 between the substrate carrying-in / out mechanism 60 and the deposition mechanism 10.
[0024]
As shown in FIG. 2, a substrate feed mechanism 70 is provided on the side of the first transfer table 84. The substrate feeding mechanism 70 includes a plurality of claw members 71, a claw support member 72 that cantileverly supports these claw members 71 on a free end side, and a claw rotation that rotatably supports a base end of the claw support member 72. A mechanism 73 and a claw advancing / retracting mechanism 74 for moving the claw support member 72 and the claw member 71 in the transport direction together with the claw turning mechanism 73 are provided. The above-mentioned claw members 71 are arranged at intervals so as to sandwich both measurement surfaces of the deposition substrate 14 and have a predetermined width so as to enlarge a gap between the adjacent deposition substrates 14 to a predetermined width. It is set to the thickness of. The claw turning mechanism 73 is composed of a motor with a clutch or the like, and is configured to be capable of rotating the claw member 71 so as to be positioned above and beside the deposition substrate 14 by rotating in the forward and reverse directions. . The claw advancing / retracting mechanism 74 is made of an air cylinder or the like, and the moving distance per operation is set to the length of the deposition substrate 14.
[0025]
The substrate feeding mechanism 70 configured as described above performs an operation of gripping the deposition substrate 14 with the claw member 71 at a predetermined interval, an operation of moving the claw member 71 in the transport direction, and By repeating the operation of opening the claw member 71 and the operation of moving the claw member 71 in the direction opposite to the transport direction, the deposition substrate 14 carried into the standby chamber 61c from the preheating chamber 61b is moved to the second preheating heater 83. , And are sequentially sent to the pre-heating position and the attachment / detachment position A, and are sent from the attachment / detachment position A to the unloading mechanism 60c.
[0026]
The substrate carrying-in / out mechanisms 60 including the above-described respective mechanical units 60a to 60c are arranged side by side symmetrically with respect to the crucible device 75. As a result, the attachment / detachment position A existing in the path of the substrate carrying-in / out mechanism 60 is located at a position deviated from above the molten metal 15 in the crucible device 75. As shown in FIG. 3, the crucible device 75 supports a crucible 76 for accommodating the molten metal 15, an induction heating coil 77 disposed around a side wall of the crucible 76, and supports the crucible 76 and the induction heating coil 77. And a crucible support 78. A high-frequency power supply is connected to the induction heating coil 77 via a power cable (not shown). Thereby, the induction heating coil 77 generates an alternating magnetic field around the crucible 76 when high-frequency AC power is supplied from the high-frequency power supply, so that the surface of the crucible 76 is mainly induction-heated. I have.
[0027]
As shown in FIG. 2, the crucible 76 is formed in a circular shape in a plan view. Note that the crucible 76 may be formed in a rectangular shape or an elliptical shape in plan view so that the traveling direction of the deposition substrate 14 is long. In this case, it is possible to prevent the side wall of the crucible 76 from becoming an obstacle when the deposition substrate 14 is immersed while minimizing the capacity of the molten metal 15. Further, the bottom wall of the crucible 76 is set to have a sufficiently large thickness so that a large amount of heat is transmitted from two directions, the side surface side and the bottom surface side. On the other hand, the side wall of the crucible 76 is set to a thickness less than the penetration depth of the electromagnetic induction, and a phenomenon in which falling objects such as dust become nuclei and solidify the center of the surface of the molten metal 15 by convection of the molten metal 15. Has been prevented.
[0028]
A supply mechanism 90 for supplying the object to be melted 101 is provided diagonally above the crucible device 75. The supply mechanism 90 is provided on a wall surface of the vacuum container 4 on the downstream side in the transport direction. The supply mechanism 90 includes a housing partition 91 having one end opened into the processing chamber 3, and a shield capable of sealingly separating the housing partition 91 into a supply chamber 93 on the processing chamber 3 side and a preparation chamber 94 on the atmosphere side. It has a mechanism 92, a lid member 95 capable of opening and closing the preparation chamber 94 to the atmosphere side, and a raw material transfer mechanism 96 for transferring the object to be melted 101 from the preparation chamber 94 to above the crucible 76.
[0029]
A first viewing window 4 a of the vacuum container 4 is arranged on a side of the supply mechanism 90. The first viewing window 4a is provided with a first image pickup device 8a such as a CCD camera. The first imaging device 8a is set so as to capture an image of the molten metal 15 together with the crucible 76, and is capable of detecting the surface level of the molten metal 15 based on an imaging signal. A second viewing window 4b is disposed on the downstream side wall surface of the vacuum container 4 in the transport direction. The second viewing window 4b is provided with a second imaging device 8b such as a CCD camera. The second imaging device 8b is set so as to capture an area viewed from the opposite direction that cannot be captured by the first imaging device 8a.
[0030]
The operations of the imaging devices 8a and 8b and the supply mechanism 90 are controlled by a control device (not shown). The control device includes an arithmetic unit, a storage unit, an input / output unit, and the like, and has various functions for controlling each mechanism of the semiconductor substrate manufacturing apparatus 1 individually and in conjunction with each other. Specifically, the function of detecting the level of the molten metal 15 based on the brightness of the image signal from the first imaging device 8a or the supply of the molten metal 15 so that the detected level is a predetermined reference level is provided. The mechanism 90 has a function of controlling the supply timing and supply amount of the dissolving object 101 in the mechanism 90 and the like.
[0031]
Further, a deposition mechanism 10 is provided above the crucible device 75, as shown in FIG. The deposition mechanism 10 moves the substrate gripping mechanism 51 (described later) between the attachment / detachment position A and the molten metal 15 of the crucible device 75 in a direction orthogonal to the carrying-in / out direction (transport direction). The mounted deposition substrate 14 is immersed in a molten metal 15 and pulled up. More specifically, the deposition mechanism 10 holds the other surface of the deposition substrate 14 (the opposite surface to the substrate surface 14a) at the attachment / detachment position A via the substrate holding mechanism 51 so as to be attachable / detachable from below. In the immersion position, the tip holding the deposition substrate 14 in a posture inclined with respect to the turning radial direction is turned around the turning axis so that the other surface of the deposition substrate 14 is positioned above, The deposition substrate 14 is moved in the cross direction together with the substrate gripping mechanism 51. The turning radius direction is the longitudinal direction of the turning member 50 that turns around the turning shaft 49 in FIG.
[0032]
The deposition mechanism 10 includes a horizontal movement mechanism 13, a vertical movement mechanism 11 horizontally movable by the horizontal movement mechanism 13, a rotating mechanism 12 vertically movable by the vertical movement mechanism 11, and a substrate gripping mechanism 51. have. The horizontal moving mechanism 13 is provided on the upper surface of the partition wall 62c surrounding the standby chamber 61c. As shown in FIG. 4, the horizontal moving mechanism 13 includes a horizontal transport unit 16 orthogonal to the transport direction, and a horizontal drive unit 17 that drives the horizontal transport unit 16. The horizontal transfer section 16 is disposed in the horizontal direction, and one end is disposed outside the vacuum vessel 4 and the other end is disposed in the processing chamber 3 in the vacuum vessel 4.
[0033]
As shown in FIG. 3, the horizontal transport section 16 includes a screw shaft member 18 having a thread groove formed on the entire peripheral surface, a block member 19 screwed to the screw shaft member 18, and a lower surface of the block member 19. And a connecting member 21 provided on the upper surface of the block member 19 and connected to the vertical moving mechanism 11. Further, as shown in FIG. 4, the horizontal transport section 16 has a connection shaft member 24 connected to one end of the screw shaft member 18 and extending outside the vacuum vessel 4. The horizontal drive unit 17 is connected to one end of the connection shaft member 24. The horizontal drive unit 17 has a horizontal drive device 23 such as a servomotor that can rotate forward and backward at an arbitrary rotation speed and can stop at a predetermined holding force. The horizontal driving device 23 enables the vertical movement mechanism 11 to move to an arbitrary position in the horizontal direction by rotating the screw shaft member 18 forward and reverse via the connection shaft member 24.
[0034]
As shown in FIG. 3, the vertical moving mechanism 11 horizontally moved by the horizontal moving mechanism 13 includes a vertical transport unit 30 disposed in a vertical direction and a vertical driving unit provided at an upper end of the vertical transport unit 30. 31. The vertical transport unit 30 includes a screw shaft member (not shown) having a screw groove formed on the entire peripheral surface, a block member 33 screwed to the screw shaft member, and a front surface (right side in the drawing) to which the turning mechanism 12 is connected. And a rail member 34 that supports the back surface (left surface in the figure) of the block member 33 so as to be able to move up and down.
[0035]
A vertical drive unit 31 is connected to an upper end of the vertical transport unit 30. The vertical drive unit 31 has a vertical drive device 35 such as a servomotor that can rotate forward and reverse at an arbitrary rotation speed and can be stopped at a predetermined holding force, and a cooling device 36 that cools the vertical drive device 35. ing. The vertical drive device 35 is connected to the upper end of the screw shaft member, and moves the turning mechanism 12 to an arbitrary vertical position via the block member 33 and the like by rotating the screw shaft member forward and backward. Making it possible.
[0036]
The cooling device 36 houses the vertical driving device 35 so as to be isolated from the processing environment of the processing chamber 3, and stores the storage container 25 in which a cooling gas such as an inert gas of nitrogen gas or air is sealed. And a cooling pipe (not shown) that allows a cooling medium such as cooling water to flow along the wall surface of the storage container 25 by being joined to the wall surface of the storage container 25. The cooling device 36 is configured to maintain the storage environment in the storage container 25 at a predetermined temperature or less by exchanging heat with the cooling medium such as cooling water flowing through the cooling pipe. Note that the cooling device 36 may be configured to supply and discharge the cooling gas from outside the vacuum vessel 3 to the inside of the storage vessel 25 and circulate the same.
[0037]
The vertical moving mechanism 11 supports the turning mechanism 12 so as to be able to move up and down. The turning mechanism 12 includes a connection support 38 having one end surface connected to the block member 33, a turning drive unit 39 connected to the upper surface of the connection support 38, and an immersion mechanism unit 37 that is turned by the turning drive unit 39. And The turning drive unit 39 includes a turning drive device 40 such as a servomotor that can rotate at an arbitrary rotation speed and can be stopped with a predetermined holding force, and a cooling device 41 that cools the turning drive device 40. .
[0038]
The cooling device 41 is configured to exhibit the same cooling function by the same members as those of the above-described cooling device 36 having the storage container 25 and the like, similarly to the vertical drive unit 31. The turning drive device 40 in the cooling device 41 has a turning drive shaft 40 a arranged horizontally and a tip end of the turning drive shaft 40 a facing the block member 33. A drive sprocket 42a is provided on the turning drive shaft 40a. Below the driving sprocket 42a, an intermediate sprocket 42b and a turning sprocket 42c are arranged in this order. The driving sprocket 42a is connected to the intermediate sprocket 42b via the first chain 43a, and the intermediate sprocket 42b is connected to the turning sprocket 42c via the second chain 43b.
[0039]
The turning sprocket 42 c is provided on the rotating shaft member 44. The rotation shaft member 44 is supported by the first support member 45 so as to be rotatable in the horizontal direction. The first support member 45 rotatably supports the intermediate sprocket 42b. As shown in FIG. 4, the first support member 45 is hung down from the connecting support body 38 and is provided to protect the intermediate sprocket 42b and the chains 43a and 43b from the radiant heat of the molten metal 15.
[0040]
One end of the rotary shaft member 44 supported by the first support member 45 is connected to a rotary encoder 46. The rotary encoder 46 can detect the turning angle of the immersion mechanism 37 by detecting the rotation angle of the rotation shaft member 44. A cover member 47 is provided around the rotary encoder 46. The cover member 47 has a function as a heat shield plate for blocking radiant heat from the molten metal 15 and a function as a dustproof cover for dust floating from the molten metal 15 and adhering to the rotary encoder 46.
[0041]
On the other hand, the other end of the rotating shaft member 44 is connected to the immersion mechanism 37. As shown in FIG. 1, the immersion mechanism 37 includes second support members 48 that hang down from the lower surface of the connection support 38, and a swivel that is rotatably supported in the horizontal direction by the second support members 48. It has a shaft 49 and a pair of turning members 50 provided on the turning shaft 49. The rotating shaft member 44 and the second support members 48 are rotatably connected via a bearing mechanism 97 made of carbon. The bearing mechanism 97 has a housing 98 fitted into the lower end of each second support member 48, and a cylindrical member 99 inserted outside the rotary shaft member 44. The cylindrical member 99 is slidably inserted in the housing 98. The bearing mechanism 97 rotates the rotary shaft member 44 smoothly by sliding the outer peripheral surface (sliding surface) of the cylindrical member 99 against the inner wall surface (sliding surface) of the housing 98. .
[0042]
A solid lubricant exhibiting excellent heat resistance to the heating temperature of the bearing mechanism 97 is provided between the outer peripheral surface of the cylindrical member 99 and the inner peripheral surface of the housing 98. The solid lubricant is made of powdery molybdenum disulfide (MoS ² ) or tungsten disulfide (WS ² ), and is provided, for example, by rubbing the outer peripheral surface of the cylindrical member 99 or the inner peripheral surface of the housing 98. I have. The solid lubricant exists between the outer peripheral surface of the cylindrical member 99 and the inner peripheral surface of the housing 98 even when the immersion mechanism 37 is heated to a high temperature of, for example, 400 ° C. to 600 ° C. By reducing the frictional resistance on the moving surface over a long period of time, abrasion of the cylindrical member 99 and the housing 98 is suppressed.
[0043]
A substrate gripping mechanism 51, which will be described later, is provided at the tip of the turning members 50, 50 that are turned via the bearing mechanism 97. The substrate gripping mechanism 51 holds the deposition substrate 14 in a posture inclined at an angle with respect to the turning radial direction, thereby detachably holding the deposition substrate 14 in a horizontal state at the attaching / detaching position A from below. In B, the surface holding the deposition substrate 14 is positioned on the upper side. In addition, each turning member 50 may be formed of a metal material such as stainless steel having excellent mechanical strength, or may be formed of carbon having excellent heat resistance.
[0044]
As described above, the precipitation mechanism 10 including the mechanisms 11 to 13 performs the horizontal movement by the horizontal movement mechanism 13, the vertical movement by the vertical movement mechanism 11, and the turning movement by the turning mechanism 12, as shown in FIG. By combining them, the substrate holding mechanism 51 can be positioned between the attachment / detachment position A and the deposition position B, and the deposition substrate 14 is immersed in the molten metal 15 at a predetermined immersion locus. The immersion trajectory is determined by lowering the deposition substrate 14 obliquely from the upstream side in the swirling direction (the direction of the arrow) and immersing it in the molten metal 15, and then raising the substrate 14 obliquely downstream in the swirling direction. It is set so as to generate a precipitate plate 2 which is a precipitate formed by solidification and growth of the molten metal 15 in the immersed portion by pulling up.
[0045]
As shown in FIGS. 5A and 5B and FIG. 6, the deposition substrate 14 is formed of carbon in a rectangular shape in plan view. Note that the deposition substrate 14 may be formed in a circular shape, an elliptical shape, a triangular shape, a trapezoidal shape, or a polygonal shape such as a pentagon or more. The deposition substrate 14 has a substrate surface 14a (lower surface) on which the deposition plate 2 is deposited, an inverted trapezoidal grip 14b formed on the upper surface (anti-deposition surface) of the deposition substrate 14, and both side surfaces in the transport direction. And a projection 14c formed at the bottom. The above-mentioned protrusions 14c are arranged in a pair at the left and right ends of each side surface so as to reduce blurring between the protrusions 14c when the deposition substrates 14 abut against each other.
[0046]
Further, the protrusions 14c are arranged on the side surface of the grip portion 14b away from the substrate surface 14a so as not to be immersed in the molten metal 15. Further, the length of each protrusion 14c in the transport direction is set to a value larger than the protrusion length of the lateral precipitate 5 deposited on the side surface of the deposition substrate 14. These projections 14c prevent the corners of the deposition substrate 14 from being damaged by forming a gap between the adjacent deposition substrates 14 and prevent the deposition by the substrate feeding mechanism 70 in FIG. The separation work of the deposition substrate 14 is facilitated, and further, the contact between the lateral precipitates 5 deposited on the side surfaces of the deposition substrate 14 is prevented.
[0047]
Further, the gripping portion 14b having the protrusions 14c formed on the side surface is attached to and detached from the engaging portions 52a of the substrate gripping mechanism 51 described later by moving in the transporting direction. Are formed in parallel. Further, the width of the gripping portion 14b in the region from the center portion to the front of both ends is set to such a width that the gripping portion 14b comes into contact with the engaging portions 52a. Then, in a region from the both ends of the grip portion 14b to the both ends, the width is set so as to gradually decrease from the both ends to the both ends. Accordingly, when the deposition substrate 14 is transported, even if there is some deviation or error in the width direction with respect to the transport direction, the gripping portion 14b can be reliably inserted between the engaging portions 52a. It is possible.
[0048]
The projection 14c of the deposition substrate 14 may be formed on at least one side in the transport direction. The deposition substrate 14 may be inclined from the substrate surface 14a to the upper surface so that both ends of the substrate surface 14a are located inside both ends of the upper surface.
[0049]
The above-mentioned deposition substrate 14 is detachably held by a substrate gripping mechanism 51 provided in the immersion mechanism section 37 in FIG. As shown in FIG. 6, the substrate gripping mechanism 51 integrally includes chuck portions 52 and 52 symmetrically in the left-right direction. Each of the chuck portions 52 has an engaging portion 52a formed on the lower surface so as to engage with the grip portion 14b, an annular groove portion 52b formed to receive a falling object such as dust, and a peripheral portion around the annular groove portion 52b. And a suspending portion 52c surrounded by. The engaging portions 52a are arranged symmetrically so as to insert the holding portions 14b of the deposition substrate 14. Thereby, when the deposition substrate 14 is moved in the transport direction (the carrying-in / out direction), the substrate gripping mechanism 51 inserts the gripping portion 14b of the deposition substrate 14 between the engaging portions 52a. The deposition substrate 14 can be held vertically.
[0050]
On the other hand, on the upper surface of the suspension portion 52c, two protruding portions 52d and 52d are arranged to face each other. Pin insertion holes 52e, 52e are formed in the central portions of the two projecting portions 52d, 52d. The swiveling members 50 of the immersion mechanism 37 described above are fitted between the protruding portions 52d. A carbon pin member 53 is removably inserted into the pin insertion holes 52e. The pin member 53 connects the turning members 50 to the chuck portions 52. It is made to let.
[0051]
The pin member 53 is formed so as to be shorter than the projected area of the chuck portion 52 on the deposition side so as to avoid direct radiation of radiant heat from the molten metal 15. A hardened layer 54 is formed on the surface of the pin member 53, and the mechanical strength of the surface of the pin member 53 is increased by the hardened layer 54. Wear when attaching and detaching is reduced. On the other hand, in the chuck portion 52, a hardened layer 54 is formed in the pin insertion hole 52e that contacts the pin member 53, the engaging portion 52a that contacts the deposition substrate 14, and the lower surface. Further, the mechanical strength of the contact surface of the chuck portion 52 is enhanced by the hardened layer 54, so that the abrasion at the time of attaching and detaching the pin member 53 and at the time of gripping the deposition substrate 14 is reduced.
[0052]
As a method for forming the hardened layer 54, a hardening treatment for coating the SiC film by a surface treatment method such as plasma CVD or ion plating can be mentioned. The cured layer 54 may be formed on the entire surface of the substrate gripping mechanism 51. In this case, the mechanical strength of the entire substrate gripping mechanism 51 can be increased. Can be hardly damaged even when subjected to an impact during transportation.
[0053]
The operation of the semiconductor substrate manufacturing apparatus 1 in the above configuration will be described.
[0054]
(Preparation and maintenance process)
The preparation / maintenance process is performed when the semiconductor substrate manufacturing apparatus 1 is brought into a state suitable for production before and after production of the precipitation plate 2 is started. That is, as shown in FIG. 3, inspection of the crucible device 75, replacement of the crucible 76, and inspection of each mechanism in the vacuum vessel 4 are performed. In addition, during the inspection of the crucible device 75, the remaining amount of the object to be melted 101 stored in the storage box 72 of the supply mechanism 71 is confirmed, and replenishment is performed so as to be an appropriate amount. When the inspection or replacement of each device is completed, the vacuum vessel 4 is sealed. After the air is evacuated by operating a vacuum evacuation device (not shown), an inert gas such as Ar gas is supplied, so that a processing environment different from the external environment is formed in the processing chamber 3.
[0055]
Thereafter, high-frequency AC power is supplied to the induction heating coil 77, and a high-frequency magnetic field is generated around the crucible 76. As a result, when a strong magnetic field is applied to the surface side of the side wall of the crucible 76, mainly the surface side of the side wall is heated by induction heating, and the amount of heat on the surface side is conducted inward. Will be. A large amount of heat is transmitted from the two sides of the crucible 76, the side surface and the bottom surface, and the object to be melted 101 is evenly heated by this amount of heat. After the molten metal 15 is formed, the side and lower surfaces of the molten metal 15 are continuously heated with a large amount of heat, so that the entire molten metal 15 is maintained at a uniform temperature.
[0056]
When the molten metal 15 is formed, high-temperature radiant heat is released from the molten metal 15. At this time, a part of the radiant heat proceeds toward the precipitation mechanism 10, but the radiant heat that proceeds to the turning drive unit 39 of the precipitation mechanism 10 causes the connection support 38 to function as a heat shielding plate. Thus, the turning drive unit 39 is not directly irradiated. Further, the radiant heat that proceeds to the driving force transmission mechanism such as the first chain 43a of the deposition mechanism 10 does not directly radiate the driving force transmission mechanism because the first support member 45 functions as a heat shielding plate. Further, the radiant heat which proceeds to the rotary encoder 46 of the deposition mechanism 10 does not directly radiate the rotary encoder 46 because the cover member 47 functions as a heat shielding plate. As a result, the internal equipment of the deposition mechanism 10 is prevented from being thermally degraded due to direct radiation of radiant heat.
[0057]
Further, the vertical driving unit 31 and the turning driving unit 39 accommodate the vertical driving device 35 and the turning driving device 40 in the storage containers 25 and 25 of the cooling devices 36 and 41, respectively, so that the processing chamber 3 can be operated under a high temperature environment. Driving is avoided. Therefore, in these driving units 31 and 39, occurrence of a failure due to heat is sufficiently prevented. The cooling devices 36 and 41 maintain the storage environment in the storage container 25 at a predetermined temperature or less by exchanging heat with a cooling medium such as cooling water flowing through a cooling pipe. Therefore, even if the cooling gas leaks due to breakage of the storage container 25 or the like while the melting target is being heated and melted, the cooling water does not contact the molten metal 15 to cause a serious failure.
[0058]
(Substrate transfer process)
When the preparation for the production is completed by forming the molten metal 15 in the desired processing environment as described above, as shown in FIG. 2, the substrate loading / unloading mechanism arranged vertically symmetrically with the crucible device 75 as the center. At 60, a transport operation of the deposition substrate 14 is performed. In the following description, the transfer operation of one substrate carrying-in / out mechanism 60 will be described for convenience of description.
[0059]
Specifically, first, at a substrate setting position (not shown) arranged on the upstream side of the substrate loading / unloading mechanism 60, a plurality of deposition substrates 14 such as six are set in series with the substrate surface 14a facing upward. . Thereafter, the evacuation operation of the pressure adjustment chamber 61a is stopped by closing the electromagnetic valve 65, and the one end of the pressure adjustment chamber 61a is opened by raising the first shielding plate 63. Then, the deposition substrate 14 is loaded into the pressure adjustment chamber 61a in a serial state by a transport device such as a transport roller (not shown).
[0060]
When the above-mentioned deposition substrates 14 are set or carried in, an impact may be applied to each deposition substrate 14 due to contact or collision between the adjacent deposition substrates 14. At this time, since a pair of projections 14c are formed on the front and rear side surfaces of the deposition substrate 14 in the transport direction, contact or collision during setting or transport does not affect the projections 14c 14c of the deposition substrates 14 It will happen together. Thereby, breakage such as chipping of a corner portion due to impact applied to a corner portion of the deposition substrate 14 can be prevented. As a result, since the substrate surface 14a of the deposition substrate 14 maintains the original shape, a deposition plate having a predetermined shape can be reliably obtained.
[0061]
When all the deposition substrates 14 are carried into the pressure adjustment chamber 61a, the first shielding plate 63 is lowered, and both ends of the pressure adjustment chamber 61a are closed. Thereafter, the electromagnetic valve 65 is opened, and the pressure adjustment chamber 61a is evacuated by the exhaust system 66. Thus, dust adhering to the deposition substrate 14 is removed. The other end of the pressure adjustment chamber 61a is opened by the rise of the second shielding plate 64, so that the pressure adjustment chamber 61a and the preheating chamber 61b communicate with each other.
[0062]
Thereafter, when the deposition substrates 14 in the pressure adjustment chamber 61a are transported to the pressure adjustment chamber 61a and all of them are carried into the pressure adjustment chamber 61a, the second shielding plate 64 is lowered, and the pressure adjustment chamber 61a and the preheating chamber 61b are moved. Is isolated. In the pressure adjustment chamber 61a, the loading operation of the deposition substrate 14 from the substrate setting position described above is performed.
[0063]
In the preheating chamber 61b, the deposition substrate 14 located at the head (most upstream side) in the transport direction is opposed to the first preheating heater 82. As a result, when the power for preheating is supplied to the preheating heater 82, the leading deposition substrate 14 is heated by the preheating heater 82 to a predetermined preheating temperature. Further, when the deposition substrate 14 is heated, dust may be scattered from the deposition substrate 14 or a gas in the deposition substrate 14 may be released. , And acts as a pollutant in the processing environment of the processing chamber 3. However, most of these dusts and gases are sucked by the exhaust system 66 and discharged to the outside of the apparatus, and the remaining part flows to the processing chamber 3 by the first partition member 68 and the second partition of the standby chamber 61c. Blocked by member 69. As a result, the processing environment of the processing chamber 3 is hardly contaminated with dust or gas on the deposition substrate 14.
[0064]
Thereafter, the substrate feeding mechanism 70 is operated, and the preheated first deposition substrate 14 is conveyed by a distance substantially corresponding to the length dimension of the deposition substrate 14 while being sandwiched between the claw members 71. It is carried into the chamber 61c. The deposition substrate 14 carried into the standby chamber 61c is further preheated by the second preheater 83. Then, the temperature is finely adjusted to a desired preheating temperature or the temperature is prevented from lowering. Thereafter, the transport operation by the substrate feed mechanism 70 is repeatedly performed, so that the deposition substrate 14 in the preheating chamber 61b is sequentially transported while the deposition substrate 14 in the standby chamber 61c is sequentially transported in the direction of the attachment / detachment position A. It is transported to the waiting room 61c.
[0065]
While the deposition substrate 14 is being conveyed by the substrate feed mechanism 70 as described above, at the attachment / detachment position A, as shown in FIG. 4, the substrate gripping mechanism 51 has the engagement portions 52a and 52a positioned above. Standing in posture. Therefore, when the deposition substrate 14 is transported to the attachment / detachment position A, the grip 14b of the deposition substrate 14 is inserted from the side between the engagement portions 52a of the substrate gripping mechanism 51 as shown in FIG. , And are held in a vertically engaged state. Note that even if there is blurring or an error in the width direction during this conveyance, the width of the end of the gripping portion 14b is smaller than the width between the engaging portions 52a. It is securely inserted between the joints 52a.
[0066]
As shown in FIG. 3, when the previous deposition substrate 14 was held by the substrate gripping mechanism 51 at the time of transport to the attachment / detachment position A, the current deposition substrate 14 Is extruded from the substrate holding mechanism 51 in the transport direction. Then, the extruded previous deposition substrate 14 is carried out of the vacuum vessel 4 via the second carrier 85, and the deposition plate 2 is separated from the deposition substrate 14 by a peeling mechanism (not shown). Thus, in the attachment / detachment position A, it is possible to simultaneously mount the deposition substrate 14 before deposition on the substrate gripping mechanism 51 and withdraw the deposition substrate 14 from the substrate gripping mechanism 51 after deposition. Has become.
[0067]
Further, when the deposition substrate 14 is attached and detached, the substrate surface 14a of the deposition substrate 14 immersed in the molten metal 15 is positioned on the upper side, so that the deposition substrate 14 is transported and detached in a horizontal posture. As a result, the deposition substrate 14 is attached and detached in a stable state. Further, as shown in FIG. 2, since the attachment / detachment position A is located at a position deviated from above the molten metal 15, the attachment / detachment may drop due to dust or chipping at the time of attachment / detachment, or the deposition substrate 14 may fall due to failure to attach / detach. Even in this case, these dusts and chips, and the deposition substrate 14 are difficult to enter the molten metal.
[0068]
Further, when the deposition substrate 14 after the deposition is withdrawn from the substrate holding mechanism 51 or when the deposition substrate 14 is carried out of the apparatus, as shown in FIG. The parts 14c abut on each other. Therefore, even when the lateral precipitates 5 are formed on the side surfaces of the deposition substrate 14 during the immersion, the lateral precipitates 5 do not come into contact with each other. As a result, even when an external force due to vibration or impact is generated between the deposition substrates 14 at the time of removal or removal, the external force does not directly act on the projection 14c. This makes it possible to prevent a situation in which the side plate 5 is peeled off by an external force, so that the precipitation plate is separated from the deposition substrate 14 together with the side precipitate 5.
[0069]
(Deposition process)
When the mounting of the deposition substrate 14 to the substrate holding mechanism 51 is completed in the two substrate carrying-in / out mechanisms 60 as described above, as shown in FIG. The substrate holding mechanism 51 is moved in a direction perpendicular to the transport direction with the orientation kept constant, and the deposition substrate 14 held by the substrate holding mechanism 51 is immersed in the molten metal 15.
[0070]
Specifically, the substrate holding mechanism 51 is raised by the vertical movement mechanism 11 while being horizontally moved toward the deposition position B by the horizontal movement mechanism 13. When the substrate holding mechanism 51 is located above the molten metal 15, the turning mechanism 12 is operated, so that the substrate holding mechanism 51 and the deposition substrate 14 are immersed in the immersion trajectory having the turning center of the turning member 50 as a radius. Turned. The immersion trajectory can draw an arbitrary curve by a combination of the operations of the mechanisms 11, 12, and 13.
[0071]
When the deposition substrate 14 is immersed in the molten metal 15 as described above, since the immersion mechanism 37 is located above the molten metal 15 as shown in FIG. The supporting bearing mechanism 97 is heated to a high temperature by radiant heat from the molten metal 15. At this time, a solid lubricant exhibiting excellent heat resistance is provided between the outer peripheral surface of the cylindrical member 99 slid when the pivot member 50 pivots and the inner peripheral surface of the housing 98. Therefore, even if the immersion mechanism 37 is operated while being heated to a high temperature, the frictional resistance when the outer peripheral surface of the cylindrical member 99 and the inner peripheral surface of the housing 98 slide is maintained for a long time by the solid lubricant. Maintain the reduced state. As a result, even if the carbon forming the housing 98 and the cylindrical member 99 has the property of increasing the frictional resistance at a high temperature, the wear of the housing 98 and the cylindrical member 99 can be suppressed for a long time. Can be. Therefore, it is possible to prevent the molten metal 15 from being contaminated by a large amount of carbon dust floating in the processing chamber 3 due to wear of the housing 98 and the cylindrical member 99.
[0072]
Further, as shown in FIG. 4, at the time of turning, the substrate gripping mechanism 51 turns in a state where the directions of the engaging portions 52a coincide with the transport direction. Accordingly, the projection 14 c of the deposition substrate 14 does not move in the transport direction within the engaging portions 52 a, so that the deposition substrate 14 does not fall off the substrate gripping mechanism 51. The deposition substrate 14 thus held by the substrate gripping mechanism 51 is immersed in the molten metal 15 at the deposition position B while being positioned below the substrate gripping mechanism 51 as shown by the two-dot chain line in FIG. The object 101 to be melted of the molten metal 15 is deposited on the substrate surface 14a of the use substrate 14. Then, after a certain period of time, the deposition substrate 14 is pulled up from the molten metal 15, so that the deposition plate 2 having a predetermined thickness is formed on the substrate surface 14 a of the deposition substrate 14.
[0073]
The turning operation of the turning member 50 is continued until the substrate holding mechanism 51 returns to the position before the turning. At this time, since the turning angle is detected by the rotary encoder 46 in FIG. 3, the positioning of the substrate holding mechanism 51 is performed with high accuracy. Thereafter, the rotation mechanism 12 is stopped, and the vertical movement mechanism 11 and the horizontal movement mechanism 13 are operated, so that the substrate gripping mechanism 51 is returned to the attachment / detachment position A. Thereafter, in the above-described substrate transport step, when the next deposition substrate 14 is transported to the attachment / detachment position A by the substrate feeding mechanism 70, the next deposition substrate 14 is sent out by the next deposition substrate 14.
[0074]
Further, as described above, the deposition operation is completed in one substrate loading / unloading mechanism 60 and the deposition operation in the other substrate loading / unloading mechanism 60 is continued until the next deposition substrate 14 is mounted on the substrate gripping mechanism 51. Is similarly implemented. Thus, the deposition plates 2 are sequentially manufactured by one crucible device 75 while the deposition substrates 14 transported by the two substrate loading / unloading mechanisms 60 are alternately used.
[0075]
As described above, the bearing mechanism 97 (drive mechanism) of the present embodiment is operated by sliding the mechanism components heated to a high temperature under a vacuum or an inert gas processing environment, as shown in FIG. A solid lubricant exhibiting excellent heat resistance to the heating temperature of the bearing mechanism 97 is applied to the inner peripheral surface (sliding surface) of the cylindrical member 99 (mechanical component) and the housing 98 (mechanical component). It is configured to be provided on the inner peripheral surface (sliding surface). Then, the bearing mechanism 97 configured as described above heats and melts the object to be melted 101 into the molten metal 15 under the above processing environment, and immerses the deposition substrate 14 in the molten metal 15 to deposit the object to be melted 101. The immersion mechanism 37 (immersion mechanism) is provided in the semiconductor substrate manufacturing apparatus 1 (deposited plate manufacturing apparatus) for manufacturing the plate 2 and is located above the molten metal 15 at the time of manufacturing the deposited plate 2.
[0076]
According to the above configuration, since the solid lubricant exhibiting excellent heat resistance to the heating temperature of the bearing mechanism 97 is present on the outer peripheral surface and the inner peripheral surface of the cylindrical member 99 and the housing 98, the bearing is provided. Even when the mechanism 97 is operated while being heated to a high temperature, the frictional resistance of the sliding surface is maintained by the solid lubricant for a long period of time. Therefore, abrasion of the cylindrical member 99 and the housing 98 can be suppressed for a long time, and smooth operation of the bearing mechanism 97 can be realized for a long time. As a result, the renewal period due to wear of the bearing mechanism 97 can be extended, so that the precipitation plate 2 of good quality can be manufactured with high productivity.
[0077]
In the present embodiment, the solid lubricant is present only on the inner peripheral surface of the cylindrical member 99 and the inner peripheral surface of the housing 98 by a method of rubbing the solid lubricant. However, the present invention is not limited to this. Not something. That is, the solid lubricant may be present on one of the outer peripheral surface of the cylindrical member 99 and the inner peripheral surface of the housing 98. Further, the solid lubricant may be present at least on the inner peripheral surface or the outer peripheral surface thereof, and may be present on the entire cylindrical member 99 or the housing 98. For example, when forming the cylindrical member 99 and the housing 98 with carbon, a solid lubricant may be mixed in the carbon, and the solid lubricant inside may be exposed from the wall surface of the cylindrical member 99 and the housing 98.
[0078]
In the present embodiment, the powdery solid lubricant is present on the sliding surface by a method of rubbing, but the present invention is not limited to this. For example, a method may be adopted in which a solid lubricant is applied in the form of paste or grease to the sliding surface and then fired to leave only the solid lubricant.
[0079]
Further, in the present embodiment, the immersion mechanism 37 is formed of carbon, but is not limited thereto, and may be formed of ceramics. Further, the bearing mechanism 97 of the present embodiment is configured to be rotatably supported by the cylindrical member 99 and the housing 98. However, the present invention is not limited to this, and even if a ceramic bearing is used. good. Further, in the present embodiment, a case is described in which a solid lubricant is used for the bearing mechanism 97 of the semiconductor substrate manufacturing apparatus 1. However, the mechanical parts heated to a high temperature in a vacuum or an inert gas processing environment. The present invention can be applied to all types of drive mechanisms as long as the drive mechanism slides the.
[0080]
【The invention's effect】
As described above, according to the present invention, since the solid lubricant exhibiting excellent heat resistance to the heating temperature of the mechanical component is present on the sliding surface of the mechanical component, the mechanical component is operated while being heated to a high temperature. However, the frictional resistance of the sliding surface of the mechanical component is maintained for a long time by the solid lubricant. As a result, there is an effect that the wear of the mechanical components can be suppressed for a long period of time, and a smooth operation of the drive mechanism can be realized for a long period of time.
[Brief description of the drawings]
FIG. 1 is an explanatory diagram showing a schematic configuration of a bearing mechanism.
FIG. 2 is a schematic configuration diagram when the semiconductor substrate manufacturing apparatus is viewed in plan.
FIG. 3 is a schematic configuration diagram when the semiconductor substrate manufacturing apparatus is viewed from the front.
FIG. 4 is a schematic configuration diagram when the semiconductor substrate manufacturing apparatus is viewed from the side.
5A and 5B are explanatory diagrams showing a state of a deposition substrate after deposition, wherein FIG. 5A is a plan view and FIG. 5B is a front view.
FIG. 6 is a perspective view of a substrate holding mechanism holding a deposition substrate.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Semiconductor substrate manufacturing apparatus 2 Deposition plate 3 Processing chamber 3a Deposition mechanism accommodating space 3b Substrate moving space 3c Molten accommodating space 4 Vacuum container 5 Side deposit 10 Depositing mechanism 11 Vertical moving mechanism 12 Rotating mechanism 13 Horizontal moving mechanism 14 Deposition substrate 14a Substrate surface 14b Gripping part 14c Projecting part 15 Molten metal 16 Horizontal transport unit 17 Horizontal drive unit 23 Horizontal drive unit 24 Connecting shaft member 25 Storage container 30 Vertical transport unit 31 Vertical drive unit 33 Block member 35 Vertical drive unit 36 Cooling unit 37 Immersion Mechanism unit 38 Connection support unit 39 Swivel drive unit 40 Swivel drive device 41 Cooling device 46 Rotary encoder 47 Cover member 49 Swivel shaft 50 Swivel member 51 Substrate gripping mechanism 52 Chuck unit 52a Engaging unit 60 Substrate carry-in / out mechanism 60a Carry-in mechanism unit 60b Intermediate mechanism 60c Unloading mechanism 61a Pressure adjustment chamber 61b Preheating chamber 61 Standby chamber 63 First shield plate 64 Second shield plate 65 Electromagnetic valve 66 Exhaust system 67 Viewing window 68 First partition member 69 Second partition member 75 Crucible device 76 Crucible 82 First preheater 83 Second preheater 84 First transfer Table 85 Second transfer table 90 Supply mechanism 96 Raw material transfer mechanism 97 Bearing mechanism 98 Housing 99 Cylindrical member 101 Object to be melted

Claims (5)

A drive mechanism that operates by sliding a mechanism component heated to a high temperature under a vacuum or an inert gas processing environment,
A drive mechanism characterized in that a solid lubricant exhibiting excellent heat resistance to the heating temperature of the mechanism component is provided at least on a sliding surface of the mechanism component. The drive mechanism according to claim 1, wherein the solid lubricant is molybdenum disulfide or tungsten disulfide. The drive mechanism according to claim 1, wherein the mechanism component is formed of carbon. The drive mechanism according to claim 1, wherein the mechanical component is a ceramic bearing. Under the processing environment, the object to be dissolved is heated and melted to form a molten metal, and the substrate for deposition is immersed in the molten metal. The drive mechanism according to any one of claims 1 to 4, wherein the drive mechanism is provided in an immersion mechanism located above the molten metal.

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