JP2004202604A - Package structure and manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a structure of a micromachine package strong against external electric noise and reducing the size and cost, and a manufacturing method. <P>SOLUTION: This package structure of a micromachine has a base board 1, a device 8 for forming a movable part on the base board 1 or deformed by a signal imparted from an external part, wiring 3 and a cap 4 composed of metal or a semiconductor, and is formed by arranging the device 8 in a space 2 composed of the base board 1 and the cap 4. A base board side joining part 6 and a cap side joining part 5 in a joining part of the base board 1 and the cap 4 are formed of metal. <P>COPYRIGHT: (C)2004,JPO&NCIPI

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a configuration and a manufacturing method of a micromachine package having a substrate, a micromechanical device having a movable portion formed on the substrate, and a cap for covering the device, which is manufactured using a micromachining technique.
[0002]
[Prior art]
Conventionally, a ceramic package or the like having a space in the package has been used for a package of a substrate of a micromechanical device having a movable portion.
[0003]
As an improved technique, for example, there is a package used as an accelerometer having a structure in which a device is hermetically sealed in a cavity having a predetermined size by a combination of a semiconductor substrate wafer, a cap wafer, and frit glass. The disclosed configuration is a semiconductor wafer level package that encapsulates devices manufactured on a semiconductor substrate wafer before dicing the semiconductor substrate wafer into individual chips. The cap wafer, which is part of the semiconductor wafer level package, and a predetermined pattern of frit glass used as a bonding material are bonded to the semiconductor substrate wafer so that the device is hermetically sealed in the cavity. The electrodes that extend through the frit glass seal and connect to the device are configured to allow electrical connection by holes in the cap wafer. (For example, see Patent Document 1)
Another method is disclosed for packaging a surface structure before dicing a substrate wafer on which a surface structure including wirings and elements is arranged. In this refinement, a cap wafer is formed by a glass wafer with a structural element comprising at least one micromechanical surface texture structured on a silicon substrate and one cap covering the at least one surface texture. The structure that is formed is described. (For example, see Patent Document 2)
[0004]
[Patent Document 1]
Patent No. 3303146
[0005]
[Patent Document 2]
JP-T-2002-500961
[0006]
[Problems to be solved by the invention]
However, the above-mentioned known techniques have the following problems. The use of the above ceramic package makes it difficult to reduce the size.If a separate circuit is required, a dedicated package or a separate circuit is required, which leads to an increase in the size and cost of a system having the above devices. I was copying.
[0007]
Furthermore, in order to arrange the above device and seal it in a ceramic package, it is necessary to cut out and handle the substrate wafer in a state where the device is exposed, and it may cause electrical leakage due to chips, mechanical malfunction, handling error. The yield was reduced due to damage.
[0008]
The bonding strength between the low melting point frit glass, which is the bonding material of Patent Document 1, and the semiconductor substrate wafer and the cap wafer is weak. Therefore, in order to secure sufficient bonding strength to hermetically seal the device, it is necessary to use a relatively high bonding strength. A large joint area is required.
[0009]
In order to apply the frit glass to the cap wafer, the cap wafer, the frit glass, and the semiconductor substrate wafer are heated and fused. However, since the frit glass is formed by printing, the surface has irregularities. In addition, since the frit glass has a high viscosity at the bonding temperature, the bonding area must be increased, and in these bondings, the cap wafer and the semiconductor substrate wafer are heat-fused in a pressurized state. There must be. As a result, there is a disadvantage that a specific amount of the low-melting glass is inevitably extruded and spread between the semiconductor substrate wafer and the cap wafer.
[0010]
In order to avoid the device being affected by this extruded low melting glass, it is necessary to ensure a relatively large bonding area between the semiconductor substrate wafer and the cap wafer, so that the device is correspondingly It gets bigger.
[0011]
In addition, since the low-melting glass is interposed at the joint between the semiconductor substrate wafer and the cap wafer, conduction between the semiconductor substrate wafer and the cap wafer cannot be established, and the potential of the cap wafer becomes unstable due to the influence of external electric noise. In a sensor in which a device handles a small signal, the device is affected by the unstable potential of the cap wafer, which causes a deterioration in sensor performance. Further, another manufacturing process is required to stabilize the potential of the cap wafer, which causes an increase in cost.
[0012]
In Patent Document 2, a micromechanical surface structure is formed in a polycrystalline silicon layer, and the surface of the silicon layer is bonded to a glass wafer by anodic oxidation. For this reason, it is required that the surface of the polycrystalline silicon layer be subjected to high-precision flattening treatment before the bonding to the glass wafer, and that dust such as particles be eliminated, resulting in a high production cost process. In addition, in the bonding by anodic oxidation, the strains of the silicon substrate and the glass wafer each cause a bonding failure, and lower the yield. Further, when a sensor element for handling a small signal is formed of a micromechanical surface texture, the glass wafer covering the surface texture is an insulator, so that the glass wafer is susceptible to external electric noise, which may degrade sensor performance.
[0013]
Therefore, the present invention has been made in view of the above problems, and has as its technical object to provide a structure and a manufacturing method of a micromachine package that is resistant to external electric noise and that can be reduced in size and cost. .
[0014]
[Means for Solving the Problems]
The technical measures taken to solve the above-mentioned problems include a substrate, a device in which a movable portion is formed on the substrate, or a device which is deformed by an externally applied signal, a first wiring, a metal, In a package structure including a semiconductor cap and a device disposed in a space formed by the substrate and the cap, the substrate-side joint formed on the substrate and the cap-side joint formed on the cap are formed of metal. That is.
[0015]
According to the above-described means, since the substrate-side joint and the cap-side joint are formed of a conductive metal, the device is less susceptible to external electrical noise. This is a preferable configuration in the case of a sensor that handles a small signal with a micromechanical device.
[0016]
Further, a technical measure taken in claim 2 is that the substrate-side joint and the cap-side joint are joined by crimping.
[0017]
According to the above-described means, the substrate-side joining portion and the cap-side joining portion formed of metal are joined by pressure bonding, so that the joining material is located between the substrate and the cap as compared with the conventional joining material made of low-melting glass. The amount of extrusion is significantly reduced, and the area of the joint can be reduced.
[0018]
A technical measure taken in claim 3 is that the substrate joint and the cap joint are joined by fusion using a brazing material.
[0019]
According to the above-described means, the joining strength is increased by joining the substrate joining portion and the cap joining portion with the brazing material. Further, if the brazing material has a thickness, it is possible to absorb the distortion of the substrate wafer and the cap wafer even at the wafer-level bonding, thereby improving the yield. This is an advantage in miniaturization.
[0020]
A technical measure taken in claim 4 is that the brazing material is an AuSn-based alloy.
[0021]
According to the above-described means, the AuSn-based alloy is melted at a relatively low temperature and has a temperature higher than the melting point of lead solder or lead-less solder, so that a soldering step after packaging becomes possible. Further, since the fusion temperature at the time of joining the substrate and the cap can be lowered, distortion caused by a difference in thermal expansion coefficient between the cap, the brazing material, and the substrate can also be reduced. In addition, the reaction between the metal of the substrate-side joint and the substrate can be suppressed. In addition, even when a plurality of types of metals have a laminated structure, it is possible to suppress a reaction between different types of metals, and it is possible to increase the selectivity of the metal at the substrate-side joint.
[0022]
The technical measure taken in claim 5 is that the outermost surface of the cap-side joint is made of an Au layer.
[0023]
According to the above-described means, the Au layer is extremely less deteriorated by the reaction with the outside air than other metals, and is easy to store and manage in manufacturing. Further, since it is inert to many chemicals such as acids, alkalis and organic solvents, the degree of freedom of chemical treatment of the substrate before bonding is increased. Further, since there is little deterioration due to the reaction with the outside air when the substrate and the cap are joined in the atmosphere of the melting temperature of the brazing material, the joining quality can be stabilized.
[0024]
The technical measures taken in claim 6 are that at least a part of the outermost surface of the cap other than the cap-side joint is an Au layer, and the outermost Au layer of the cap-side joint and the outermost layer other than the cap-side joint are. That is, at least a part of the Au layer on the surface is formed as a continuous surface.
[0025]
According to the above-described means, the brazing material extruded between the substrate and the cap is poorly compatible with the substrate and members other than the bonding portion on the substrate, and is well compatible with the Au layer on the outermost surface on the cap side. Therefore, the extent to which the device is absorbed by the Au layer on the cap side and affects the device can be extremely suppressed.
[0026]
A technical measure taken in claim 7 is that the brazing material is fixed by fusion or welding after forming the Au layer.
[0027]
According to the above-described means, in the alignment at the time of joining the substrate and the cap, the brazing material is fixed in advance by fusion or welding according to the shape of the joining portion, so that the accuracy of positioning can be improved.
[0028]
A technical measure taken in claim 8 is that the cap-side joint is formed by plating or printing an AuSn-based alloy.
[0029]
According to the above-described means, the accuracy of alignment at the time of joining can be improved, similarly to the technical means taken in claim 7.
[0030]
A technical measure taken in claim 9 is that the outermost surface of the substrate side joint is formed of an Au layer.
[0031]
According to the above-described means, the Au layer is extremely less deteriorated by the reaction with the outside air than other metals, and is easy to store and manage in manufacturing. Further, since it is inert to many chemicals such as acids, alkalis and organic solvents, the degree of freedom of chemical treatment of the substrate before bonding is increased. Further, since there is little deterioration due to the reaction with the outside air when the substrate and the cap are joined in the atmosphere of the melting temperature of the brazing material, the joining quality can be stabilized.
[0032]
According to a tenth aspect of the present invention, the Au layer on the outermost surface of the substrate-side junction is configured to be capable of externally applying a potential.
[0033]
According to the above-described means, the semiconductor or metal cap can be externally applied with an electric potential via the brazing material and the metal of the cap-side junction from the Au layer of the substrate-side junction, so that the conductive property is improved. The shielding effect against external electric noise of the micromechanical device in the portion constituted by the above is enhanced. This is a great advantage in the case where the micromechanical device is a sensor handling small signals.
[0034]
A technical measure taken in claim 11 is that the substrate is made of a conductor or a semiconductor, and the Au layer of the substrate-side junction is electrically connected to the substrate.
[0035]
According to the above-described means, since the space formed by the substrate and the cap is surrounded by the same potential, reduction of electrical noise can be expected. Further, in the device on the substrate, since the cap and the substrate are electrically connected, it is not necessary to intentionally apply a cap potential, which leads to cost reduction.
[0036]
According to a twelfth aspect of the present invention, there is provided a second wiring which is electrically insulated from the substrate, the cap, and the cap joint and electrically connects the inside and the outside of the space.
[0037]
According to the above-described means, the internal micromechanical device is driven by an electric signal from the outside by the second wiring sealed between the cap and the substrate and electrically connecting the inside and the outside of the space. Is possible. It is also possible to sense the displacement of the internal device as a change in capacitance, a change in resistance, a change in potential, or a change in current. This is advantageous for actuators and sensors that require displacement of the internal micromechanical device.
[0038]
14. The technical means according to claim 13, wherein the first wiring or an upper layer of a second wiring formed on a substrate made of a conductor or a semiconductor via a first insulating layer made of a single layer or a multilayer. And a second insulating layer composed of a single layer or a multilayer made of a material different from the outermost layer of the non-conductive substrate or the first insulating layer, and a substrate side joint is formed on the second insulating layer. That was done.
[0039]
According to the above-described means, usually, a micromechanical device is formed on a substrate via a layer to be etched which can be selectively etched with respect to a device such as SiO2, and the layer to be etched is formed at the end of a manufacturing process. Etching is removed to make the micromechanical device movable. In the above claim, since the second insulating layer is made of a material different from the outermost layer of the non-conductive substrate or the first insulating layer, the etching of the device, the non-conductive substrate or the first insulating layer is performed. The influence can be suppressed, and only the second insulating layer can be removed by etching. In addition, it is possible to form a combination of a plurality of electrically separated functions between the device, the wiring, and the substrate.
[0040]
A technical measure taken in claim 14 is that the substrate has a single-crystal, polycrystalline or amorphous semiconductor layer via at least one insulating layer, and a substrate-side junction is formed on the semiconductor layer. It is.
[0041]
According to the above-described means, for example, since the adhesion of the metal to the semiconductor layer is higher than the adhesion of the metal layer to the insulating layer of the Si oxide film and the Si nitride film, the substrate-side junction is formed on the semiconductor layer. This increases the bonding strength and improves the sealing reliability. Further, similarly to the thirteenth aspect, it is possible to form a combination of a plurality of electrically separated functions between the wiring and the substrate.
[0042]
A technical measure taken in claim 15 is that the metal layer at the substrate side joint is made of Au, Ni and Al from the surface layer.
[0043]
According to the above-described means, usually, the micromechanical device is formed on the substrate via the layer to be etched which can be selectively etched with respect to a surface structure such as SiO 2, and the layer to be etched is formed at the end of the manufacturing process. Is removed by etching to make the micromechanical device movable. In the present invention, when the SiO2 layer, which is the layer to be etched, is removed after forming the metal of the joining member and before the cap joining, the SiO2 layer is made of a metal layer having corrosion resistance to the etchant of SiO2. Sometimes, it is not necessary to take measures for protecting the metal layer, and the cost of the process can be reduced. Al has high reactivity and good adhesion to the substrate side, and Au has good compatibility with the AuSn alloy brazing material. However, it is known that Al and Au react at a low temperature and peel off from the reaction layer. In the present invention, a Ni layer is inserted as an anti-reaction film between Al and Au, so that a metal layer having good adhesion to both the substrate and the AuSn-based alloy brazing material and having high heat resistance can be formed.
[0044]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the drawings.
[0045]
An example of a package configuration 10 in which a device 8 to which the present invention is applied is disposed on a substrate 1 and the device 8 is included in a space 2 formed by joining the substrate 1 and a cap 4 made of metal or semiconductor. 1 and 2 are shown in FIGS. FIG. 1 shows a state in which a metal layer is formed on the outermost surfaces of the substrate-side joint portion 6 and the cap-side joint portion 5 and joined by crimping or thermocompression bonding. FIG. A metal layer is formed on the outermost surface and joined using the brazing material 7 as a joining material. 1 and 2, the cap 4 is made of a conductive material. Even if the cap 4 is made of a semiconductor, the potential of the cap 4 is made equal to the potential of the metal layer of the substrate-side bonding portion 6 through the ohmic contact. It is possible. On the other hand, an acceleration sensor, an angular velocity sensor, or an actuator which has a circuit for handling a small signal or a movable portion as the device 8 and detects displacement of the movable portion by detecting a capacitance change in conjunction with displacement of the movable portion has a signal level. In comparison, the electric disturbance is large, and the disturbance causes the performance to be impaired.
[0046]
In the present invention, as described above, the device 8 disposed on the substrate 1 is covered by the cap 4, and the cap 4 can be set at the same potential as the metal layer of the substrate-side joint 6, The metal layer of the substrate-side junction 6 can be set at a constant potential with respect to the reference potential of the device 8 via a wiring or the like. Therefore, it is possible to provide a shield effect against electric disturbance. Therefore, it is possible to provide a circuit or a sensing system in which the performance is hardly deteriorated due to the electric disturbance.
[0047]
1 and 2, the use of a conductor or a semiconductor for the substrate 1 makes it possible to control the substrate potential. By controlling the potential at a constant level with respect to the reference potential of the device 8 disposed on the substrate 1, an electric disturbance can be obtained. Can be expected to have a shielding effect. The acceleration sensor, the angular velocity sensor, and the actuator that detect the displacement of the movable part by detecting a change in capacitance that is linked to the displacement of the movable part by having a circuit that handles a small signal or a movable part as the device 8, degrade the performance due to electric disturbance. Thus, it is possible to provide a circuit or a sensing system with less noise.
[0048]
As shown in FIGS. 1 and 2, the inside and outside of a space 2 composed of a substrate 1 and a cap 4 are electrically connected to each other, and a wiring 3 electrically insulated from the substrate 1 and the cap 4 is provided. 2 and the signal generated in the space 2 can be detected. Forming a first insulating layer 11 on a conductor or semiconductor substrate 1 or forming a wiring layer on a non-conductive substrate, forming a second insulating layer 9 on a substrate including the wiring layer, The substrate-side junction 6 is formed on the second insulating layer 9 directly or via a single-crystal, polycrystalline, or amorphous semiconductor layer so as to surround the device 8 disposed thereon. In the above process, the second insulating layer 9 or the single-crystal, polycrystalline or amorphous semiconductor layer can be formed by film formation, photolithography and etching which are ordinary semiconductor processes. And take the electrode from the back. Alternatively, a through-electrode is provided on the cap 4 side, and only processing on the substrate surface is required as compared with a case in which an electrode is taken from the cap 4. Also, there is no problem of reliability of filling the hole when forming the through-electrode, and low cost and high yield are obtained. Becomes possible. This also applies to micromachine sensors, micromachine actuators, and electronic circuits using SOI substrates.
[0049]
By using an AuSn-based alloy as the brazing material 7 of the joint shown in FIG. 2, the joining can be performed at a low temperature, and the reaction between the multilayer film of the joint and the reaction between the multilayer film of the joint and the substrate 1 or the cap 4 can be suppressed, and the reliability can be improved. High joints can be expected. Further, since the melting point of the AuSn-based alloy is higher than the temperature of the soldering step, a special step by using the AuSn-based alloy is not required, so that an increase in cost can be suppressed.
[0050]
In the case where an AuSn-based alloy is used as the brazing material 7 of the joint shown in FIG. 2, the Au layer is used on the outermost surface of at least one of the cap-side joint 5 and the substrate-side joint 6 so that the joint and the AuSn are used. It improves compatibility with the base alloy and can be expected to have high bonding strength. In addition, a Si-based material such as Si, SiO2, SiN, or SiON is usually used for forming the device 8 having a movable portion using a semiconductor process. In the device 8 having Si as a movable portion, Si is placed on SiO2. In the state of being constrained to the substrate 1 through the intermediary, it is processed into a target shape, and finally SiO2 is removed to release the constrained state and make it movable. In addition, a movable part such as an acceleration sensor or a vibration type angular velocity sensor is held on the substrate 1 by a beam having one end connected to the substrate 1 and the other end connected to the movable part and serving as a spring, and is held by a beam such as an electrostatic motor. The movable part that cannot be formed is formed on the substrate 1 by forming a pin made of Si or the like at the center of rotation and held on the substrate 1.
[0051]
In addition, a photolithography process is required to form the metal layer at the bonding portion, and it is necessary to uniformly form a photosensitive resist film on the substrate 1. Is formed. As described above, the formation of the device 8 having the movable part using the semiconductor process usually requires a step of removing SiO 2, and the removal of SiO 2 often uses an etchant such as buffered hydrofluoric acid. It is necessary to take measures to prevent the corrosion of the upper metal layer. However, as shown in the present invention, since the outermost surface of the metal layer at the joint is an Au layer and the outermost surface of the metal layer on the substrate 1 other than the joint is an Au layer, the corrosion resistance to the etchant is reduced. This improves the degree of freedom of the process when removing SiO2.
[0052]
As shown in FIG. 3, by forming the brazing material 7 on the cap-side joint portion 5 by plating, printing, fusing, welding, or the like of an AuSn alloy, the number of components at the time of joining can be reduced. An improvement in alignment accuracy can be expected.
[0053]
In FIG. 5, the outermost surface of the cap-side joint 5 is an Au layer, and the outermost surface other than the cap-side joint 5 is at least partially formed of an Au layer. Is formed. With such a structure, in bonding the substrate 1 and the cap 4, the extruded AuSn-based alloy does not flow into the poorly-compatible Si-based substrate forming material, and the Au on the outermost surface other than the cap-side bonding portion 5 that is well-compatible. Since it is absorbed into the layer, the influence on the device 8 can be suppressed. For this reason, the distance between the device 8 and the junction can be reduced, and as a result, the size of the entire device 8 can be reduced.
[0054]
As shown in FIG. 6, by making the layer structure 12 of the metal layer of the bonding portion Al / Ni / Au from the substrate side, the adhesion strength between Al 61 and the substrate 1 is increased, and an Au layer 63 is formed on the outermost surface. By doing so, when the AuSn-based alloy is used for the brazing material 7, the brazing material 7 is well adapted to the brazing material 7 and the joining strength is increased. Further, by providing the Ni layer 62 between the Al layer 61 and the Au layer 63, the reaction between Al 61 and Au 63 can be suppressed, and the heat resistance can be improved. Further, in the removal of the SiO 2 layer necessary to release the device 8 having the movable portion from the restraint on the substrate 1 using a normal semiconductor process, the book “Photoetching and microfabrication” (Taruoka, Nihei, T. According to Electronic Publishing Co., the corrosion of the Al layer 61 can be suppressed by the SiO 2 layer hydrofluoric acid etchant, and the Au layer 63 and the Ni layer 62 have high corrosion resistance to the hydrofluoric acid etchant. In some cases, special protection of the substrate-side bonding portion 6 becomes unnecessary, and cost reduction and high yield can be expected due to simplification of the process.
[0055]
【The invention's effect】
According to the present invention, as described above, the structure and manufacturing method of a wafer-level package can be configured with a simple process and can reduce the cost of parts to be used.
[0056]
According to the above-described means, since the substrate-side junction and the cap-side junction are formed of metal, the device has conductivity, has a stable electric potential, and is hardly affected by external electric noise. This is a preferable configuration in the case of a sensor that handles a small signal with a micromechanical device. Also, since the board-side joint and the cap-side joint made of metal are joined by crimping, the amount of the joining material pushed out between the substrate and the cap is significantly higher than that of the conventional joining material made of low-melting glass. The joint area can be reduced. The joining strength between the substrate joining portion and the cap joining portion is increased by joining with the brazing material. Further, if the brazing material has a thickness, it is possible to absorb the distortion of the substrate wafer and the cap wafer even at the wafer-level bonding, thereby improving the yield. The AuSn-based alloy used for the brazing material is melted at a relatively low temperature and has a temperature higher than the melting point of lead solder or lead-less solder, so that a soldering step after packaging can be performed. Further, since the fusion temperature at the time of joining the substrate and the cap can be made lower than that of the prior art, the distortion caused by the difference in the coefficient of thermal expansion between the cap, the brazing material, and the substrate can also be reduced. In addition, the reaction between the metal of the substrate-side joint and the substrate can be suppressed.
[0057]
Further, since the structure is such that a potential can be externally applied to the semiconductor or metal cap via the brazing material and the metal of the cap side bonding part from the Au layer of the substrate side bonding part, the conductive layer is made of a conductive material. The shielding effect against external electric noise of the micromechanical device at the site is enhanced. This is a great advantage in the case where the micromechanical device is a sensor handling small signals.
[0058]
Usually, a micromechanical device is formed on a substrate via an etching target layer which can be selectively etched with respect to a surface structure such as SiO2. At the end of the manufacturing process, the above etching target layer is removed by etching to obtain a micromechanical device. Make the device movable. In the present invention, when the SiO2 layer, which is the layer to be etched, is removed after forming the metal of the joining member and before the cap joining, the SiO2 layer is made of a metal layer having corrosion resistance to the etchant of SiO2. Sometimes, it is not necessary to take measures for protecting the metal layer, and the cost of the process can be reduced. Al has high reactivity and good adhesion to the substrate side, and Au has good compatibility with the AuSn alloy brazing material. However, it is known that Al and Au react at a low temperature and peel off from the reaction layer. In the present invention, a Ni layer is inserted as an anti-reaction film between Al and Au, so that a metal layer having good adhesion to both the substrate and the AuSn-based alloy brazing material and having high heat resistance can be formed.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view showing a schematic configuration of a package according to an embodiment of the present invention.
FIG. 2 is a schematic cross-sectional view of a package according to another embodiment of the present invention.
3 is a schematic view of a package configuration according to an embodiment of the present invention, in which an AuSn-based alloy is formed as a brazing material on a cap-side joint portion by plating, printing, welding, welding, or the like, and before joining in FIG. 2; FIG.
FIG. 4 is a schematic cross-sectional view showing a state before joining of FIG. 2 when a preform brazing material is used in the embodiment of the present invention.
FIG. 5 is a schematic cross-sectional view when an Au layer is formed on a cap-side surface according to the embodiment of the present invention.
FIG. 6 is a cross-sectional view schematically showing a structure of a metal layer at a substrate-side joint according to an embodiment of the present invention.
[Explanation of symbols]
1: substrate
2: Space
3: Wiring
4: Cap
5: Cap side joint
6: Board side joint
7: brazing filler metal
8: Device
9: second insulating layer
10: Package structure in which a surface texture is arranged on a substrate and the surface texture is included in a space formed by joining the substrate and a metal or semiconductor cap.
11: first insulating layer
12: Structure of the metal layer at the substrate side joint
61: Al layer on the substrate side joint
62: Ni layer at the substrate side joint
63: Au layer at substrate-side junction

Claims (15)

A substrate, wherein a movable portion is formed on the substrate, or a device which is deformed by an externally applied signal, a first wiring, and a cap made of metal or semiconductor; and A package structure in which the device is arranged in a space formed by the substrate, wherein the substrate-side joint formed on the substrate and the cap-side joint formed on the cap are made of metal. . The package structure according to claim 1, wherein the substrate-side joint and the cap-side joint are joined by pressure bonding. The package structure according to claim 1, wherein the board-side joint and the cap-side joint are joined by fusion using a brazing material. The package structure according to claim 3, wherein the brazing material is an AuSn-based alloy. The package structure according to claim 1, wherein an Au layer is formed on an outermost surface of the cap-side joint. At least a part of the outermost surface of the cap other than the cap-side joint is an Au layer, and at least one of the outermost Au layer of the cap-side joint and the outermost Au layer other than the cap-side joint is provided. The package structure according to claim 5, wherein the portion is formed of a continuous surface. The package structure according to claim 5, wherein the brazing material is fixed by fusion or welding after forming the Au layer. The package structure according to claim 4, wherein the cap-side joint is formed by plating or printing an AuSn-based alloy. 5. The package structure according to claim 1, wherein the outermost surface of the substrate-side joint is made of an Au layer. The package structure according to claim 9, wherein the Au layer on the outermost surface of the substrate-side junction has a configuration to which a potential can be applied from the outside. The package structure according to claim 9, wherein the substrate is made of a conductor or a semiconductor, and the Au layer at the substrate-side junction is electrically connected to the substrate. The second wiring which is electrically insulated from the substrate, the cap and the cap joint, and electrically connects the inside and the outside of the space is arranged. Package structure. A non-conductive substrate or a non-conductive substrate is formed on the second wiring formed on the first wiring or the substrate made of a conductor or a semiconductor via a first insulating layer made of a single layer or a multilayer. A second insulating layer made of a single layer or a multilayer made of a material different from the outermost layer of the first insulating layer, and the substrate-side junction is formed on the second insulating layer. The package structure according to claim 12, wherein 13. The substrate according to claim 12, wherein the substrate has a single-crystal, polycrystalline or amorphous semiconductor layer via at least one insulating layer, and a substrate-side junction is formed on the semiconductor layer. Package structure described in 1. The package structure according to any one of claims 9 to 14, wherein the metal layer of the substrate-side junction is made of Au, Ni, and Al from the surface layer.

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