JP4353118B2 - Signal extraction structure for semiconductor microelectromechanical devices - Google Patents

Description

  The present invention relates to a signal extraction structure of a semiconductor microelectromechanical device for extracting an electrical signal from the semiconductor microelectromechanical device.

  2. Description of the Related Art Conventionally, a semiconductor microelectromechanical device having a structure in which a substrate made of glass or the like and a substrate made of a semiconductor are joined and used for detecting pressure, acceleration, or the like has been used. For example, as disclosed in Patent Document 1, an acceleration sensor having a structure in which three semiconductor plates and two glass plates provided with through holes by blasting are alternately joined is known. A structure which is a movable electrode supported by a beam portion is formed on the semiconductor plate of the middle layer of the acceleration sensor, and fixed electrodes are provided on the glass plates on both sides of the structure so as to face the structure. Is provided. Each fixed electrode is electrically connected to the semiconductor plate in the outer layer portion through an electrode film provided through the through hole of the glass plate.

  When acceleration is applied to the acceleration sensor, the structure is displaced by the inertial force, and the distance between each fixed electrode and the structure is changed, so that the intermediate layer semiconductor plate and the outer layer semiconductor plate are separated from each other. The capacitance of each changes. This change in capacitance is taken out as a change in electrical signal, and an external circuit or the like detects the acceleration based on this signal. In this acceleration sensor, the electrode film provided through the through hole is also provided so as to extend on the surface of the glass plate to be joined to the semiconductor plate of the outer layer portion, and the electrode film is securely joined to the semiconductor plate of the outer layer portion. Like to do.

  FIGS. 6A, 6B, and 6C show an example of a signal extraction structure of a semiconductor microelectromechanical device different from the above-described acceleration sensor. This semiconductor microelectromechanical device is obtained by joining a glass plate 81 having a through hole 81a and a semiconductor plate 82 having an electrode pad 84 formed on the joining surface of the glass plate 81. A structure (not shown) such as a movable electrode of the acceleration sensor is formed. An electrode film 85 is formed on the inner surface of the through hole 81 a and the upper surface of the glass plate 81 so as to be electrically connected to the electrode pad 84. The electrode pad 84 is formed on the glass plate 81 and connected to a fixed electrode 86 that generates an electric signal in accordance with the displacement of the structure, and is insulated from the semiconductor plate 82 by providing an insulating film 87. . An electrical signal generated at the fixed electrode 86 is taken out from the electrode film 85 through the electrode pad 84.

As shown in FIG. 6A, the through hole 81a of this semiconductor microelectromechanical device is formed by forming a pattern 815 such as a photoresist on the upper surface of the glass plate 81 and blasting from the arrow direction in the figure. Is done. After forming the through hole 81a, the pattern 815 is removed, and as shown in FIG. 6B, a glass plate on which the fixed electrode 86 is formed and a semiconductor plate on which the electrode pad 84 and the insulating film 87 are formed. Be joined. An electrode film 85 is formed on the inner surface of the through hole 81 a and the upper surface of the glass plate 81, and a path for taking out an electric signal from the fixed electrode 86 is configured.
JP-A-7-128364

  However, in the signal extraction structure of the semiconductor microelectromechanical device such as the acceleration sensor as described above, when the through hole 81a is formed on the glass plate 81 by blasting, the edge of the through hole when penetrating the glass plate 81 There is a problem that chipping or the like occurs in the part. For example, as shown in FIG. 6B, when chipping 81b occurs in the inner surface of the through hole 81a due to the occurrence of chipping, the electrode film 85 from the upper surface of the glass plate 81 is shown in FIG. At the time of film formation, the electrode film 85 is not formed well in the chipped portion 81b and is interrupted, the electrode pad 84 and the electrode film 85 are in an insulating state, and the conduction between the fixed electrode 86 and the electrode film 85 cannot be secured, There is a possibility that a problem that the electric signal cannot be taken out may occur.

  Even if chipping occurs, if the electrode film 85 is formed so as to face both surfaces of the glass plate 81 as described in the above-mentioned Patent Document 1, the risk of occurrence of the above problems is reduced, but the manufacturing process is complicated. Therefore, there is a problem that the cost is increased, and the method is not applicable when the electrode film 85 is formed after the glass plate 81 and the semiconductor plate 82 are joined.

  The present invention has been made in view of the above problems, and by ensuring that the electrode film is formed while avoiding the chipped portion formed on the inner surface of the through-hole, the conduction between the electrode film and the electrode pad is ensured easily and reliably. Another object of the present invention is to provide a signal extraction structure for a semiconductor microelectromechanical device having high conductivity reliability.

In order to achieve the above object, according to the first aspect of the present invention, an electrical signal is taken out from a first substrate in which a through hole is formed from a main surface to a surface opposite to the main surface, and a surface bonded to the first substrate. A signal extraction structure of a semiconductor microelectromechanical device having a structure in which an electrode film electrically connected to the electrode pad is formed on the inner surface of the through hole is bonded to a second substrate on which an electrode pad is formed. The electrode pad has an area of the main surface side smaller than an area of the opposite surface, and a portion of the electrode pad on the main surface side is fitted into the through hole. The electrode film is formed on the main surface side of the first substrate and is formed so as to cover an inner surface of the through hole and an exposed portion of the electrode pad .

According to a second aspect of the present invention, a first substrate in which a through hole is formed from a main surface to a surface opposite to the main surface, and an electrode pad for taking out an electric signal are formed on a surface bonded to the first substrate. A signal extraction structure of a semiconductor microelectromechanical device having a structure in which an electrode film electrically connected to the electrode pad is formed on the inner surface of the through-hole, Conductive protrusions larger than the dimension of the second substrate bonding surface side edge of the inner surface of the through hole are formed, and the electrode film is formed on the first substrate. The film is formed on the main surface side, and is formed so as to cover the exposed portions of the conductive protrusion and the inner surface of the through hole .

According to a third aspect of the present invention, in the signal extraction structure of the semiconductor microelectromechanical device according to the first aspect, the first substrate and the second substrate are bonded by anodic bonding, and the electrode pad is anodic bonded. It consists of a low melting point material that softens or melts with the heat of time .

According to a fourth aspect of the present invention, in the signal extraction structure of the semiconductor microelectromechanical device according to the second aspect, the first substrate and the second substrate are bonded by anodic bonding, and the electrode pad and the conductive material are connected. The protrusion is made of a low-melting-point material that is softened or melted by heat during anodic bonding .

According to the first aspect of the present invention, since the portion on the main surface side of the electrode pad is formed so as to be fitted into the through hole, the position of the portion on the main surface side of the electrode pad is determined to be the through hole. It is located on the main surface side of the second substrate bonding surface side edge. As a result, even when there is a chipped portion on the edge of the second substrate bonding surface side of the inner surface of the through hole, avoid this chipped portion and ensure the conduction between the electrode film and the electrode pad easily and reliably. An electrode film can be formed, and the conductive reliability of the signal extraction structure is improved.

According to the invention of claim 2 , since the conductive protrusion larger than the edge of the second substrate bonding surface side edge of the through hole is formed on the electrode pad, the portion on the main surface side of the conductive protrusion Is positioned on the main surface side with respect to the second substrate bonding surface side edge portion of the through hole, and the conductive reliability of the signal extraction structure is improved as described above.

According to the invention of claim 3 or 4 , since the electrode pad and / or the conductive protrusion is softened by heat at the time of anodic bonding between the first substrate and the second substrate, the first at the time of anodic bonding. Due to the electrostatic force generated between the substrate and the second substrate, the portion of the electrode pad and / or the conductive protrusion on the main surface side of the first substrate approaches the main surface side of the first substrate. It deforms inside the through hole. Thereby, the portion of the electrode pad and / or the conductive protrusion on the main surface side of the first substrate is located on the main surface side with respect to the second substrate bonding surface side edge portion of the inner surface of the through hole, and Similarly, the conductive reliability of the signal extraction structure is improved.

  First, an example of a semiconductor microelectromechanical device which is a premise of the present invention will be described with reference to FIG. The semiconductor microelectromechanical device includes a first substrate 1, a second substrate 2 made of a semiconductor, a third substrate 3, an electrode pad 4 provided on the upper surface of the second substrate 2, and an upper surface of the first substrate 1. An electrode film 5 formed on the first substrate 1, a fixed electrode 6 formed on the lower surface of the first substrate 1, and an insulating film 7. This semiconductor microelectromechanical device has three layers in which a first substrate 1 and a third substrate 3 are respectively bonded to an upper surface and a lower surface of a second substrate 2 on which a movable structure is formed using a micromachining technique. Structure. This semiconductor microelectromechanical device is a so-called capacitance-type uniaxial acceleration sensor. When acceleration is applied, the structure of the second substrate 2 moves, and this structure is used as a movable electrode, and the fixed electrode 6 and the first electrode. The capacitance between the two substrates 2 changes. From this acceleration sensor, this change in capacitance is taken out as a change in electrical signal.

  On the second substrate 2, a weight portion 2a and a beam portion 2b that supports the weight portion 2a are formed as the movable structure. The beam portion 2b is provided around the weight portion 2a and is formed in a shape that is easily bent. A space 2c between the first substrate 1 and a space 2d with the third substrate 3 are provided above and below the weight portion 2a, and the weight portion 2a is movable in the direction of the arrow in FIG. It is configured as follows.

  The first substrate 1 and the third substrate 3 are made of an insulator such as glass. The first substrate 1 is formed by blasting from the upper surface to the lower surface, and is provided with a through hole 1a in which the size of the upper edge is larger than the size of the lower edge. The electrode pad 4 is for taking out an electric signal generated by the acceleration sensor, as will be described later, and is provided on the upper surface of the second substrate 2 at a position corresponding to the through hole 1a. The electrode film 5 made of, for example, an Al—Si type alloy is electrically connected to the upper surface of the substrate 1 and the inner surface of the through hole 1a. Thereby, a signal extraction structure is formed which conducts from the electrode pad 4 to the upper surface of the first substrate 1 through the through hole 1a and the electrode film 5. By connecting the electrode film 5 and an external circuit or the like by wire bonding or the like, an electric signal can be transmitted to the external circuit.

  The signal extraction structure constituted by the through-hole 1a, the electrode pad 4, and the electrode film 5 is a fixed that extracts an electric signal from the fixed electrode 6 provided on the lower surface of the first substrate 1 at a position facing the weight portion 2a. There are the one on the electrode 6 side and the one on the movable electrode side that takes out an electric signal from the weight portion 2a that becomes the movable electrode of the second substrate 2. FIG. 1 shows a signal extraction structure on the fixed electrode 6 side, in which the electrode pad 4 is electrically connected to the fixed substrate 6, and the second is formed by an insulating film 7 such as silica. It is insulated from the substrate 2. On the other hand, the signal extraction structure on the movable electrode side is not shown, but the electrode pad 4 is not connected to the fixed electrode 6 and is formed so as to be directly electrically connected to the upper surface of the second substrate 2. Otherwise, the configuration is the same as the signal extraction structure on the fixed electrode 6 side described above.

  In this acceleration sensor, an electrode pad is formed on a second substrate 2 on which a fixed electrode 6 is formed on a first substrate 1 provided with a through hole 1a, and a weight portion 2a and a beam portion 2b are formed using a micromachining technique. In the state where the insulating film 7 is formed, the first substrate 1 and the second substrate 2 are bonded by, for example, anodic bonding, and then film formation such as sputtering or vapor deposition is performed on the upper surface of the first substrate 1. The electrode film 5 is formed and manufactured by the method. The electrode film 5 is also formed on a portion of the electrode pad 4 exposed above the first substrate 1 and is electrically connected to the electrode pad 4. Similarly, the second substrate 2 and the third substrate 3 are bonded by, for example, anodic bonding.

  When acceleration is applied to this acceleration sensor, the weight 2a, which is a movable electrode, is displaced in the direction indicated by the arrow due to inertial force, and the distance between the weight 2a and the fixed electrode 6 changes. Thereby, the electrostatic capacitance between the weight part 2a and the fixed electrode 6 changes. The weight portion 2a is connected to the signal extraction structure on the movable electrode side, the fixed electrode 6 is connected to the signal extraction structure on the fixed electrode 6 side, and the change in capacitance is caused by the weight portion 2a and the fixed electrode 6 respectively. As a change in potential difference between the electrode films 5 connected to each other, it can be detected by an external circuit or the like. That is, the electrical signal generated by the acceleration sensor is extracted to the outside by this signal extraction structure.

  Next, the signal extraction structure of the semiconductor microelectromechanical device according to the first embodiment of the present invention will be described with reference to FIGS. 2 (a), 2 (b), and 2 (c). Hereinafter, the signal extraction structure of the semiconductor microelectromechanical device will be described with reference to the drawings of the above-described signal extraction structure on the movable electrode side. However, this signal extraction structure is not limited to the movable electrode side, but is on the fixed electrode 6 side. This also applies to In the present embodiment, the sealing material 10 is formed on the joint surface side edge with the second substrate 2 which is the lower edge of the inner surface of the through hole 1a, and the electrode film 5 includes the sealing material 10 and It is formed so as to cover the exposed portion of the inner surface of the through hole 1a.

  The sealing material 10 is made of a material that can be patterned, and is formed after the first substrate 1 and the second substrate 2 are bonded as shown in FIG. After the first substrate 1 and the second substrate 2 are bonded, the sealing material 10 is first formed on the entire exposed surface on the upper side of the first substrate 1 including the inner surface of the through hole 1 a and the electrode pad 4. Or applied. And the sealing material 10 is formed by patterning so that the sealing material 10 may be left in the lower end edge part of the through-hole 1a inner surface. Here, as shown in FIG. 2 (b), the lower end edge (the second substrate bonding surface side edge in the claims) of the inner surface of the through hole 1a is caused by chipping or the like generated during blasting. Although the formed chipped portion 1b exists, the sealing material 10 is formed so as to cover the chipped portion 1b. Then, after the sealing material 10 is formed, as shown in FIG. 2C, the electrode film 5 is formed on the entire exposed surface on the upper side of the first substrate 1, and the sealing material 10 and the through hole are formed. It is formed so as to cover the exposed portion of the inner surface of 1a.

  By forming the sealing material 10 in this manner, the electrode film 5 can be easily and reliably formed without interruption at the chipped portion 1b even when the chipped portion 1b is present at the lower edge of the inner surface of the through hole 1a. In addition, electrical conduction between the electrode film 5 and the electrode pad 4 can be secured, and the conductive reliability of the signal extraction structure of this semiconductor microelectromechanical device can be improved.

  Here, in the present embodiment, for example, spin-on glass (SOG) can be used as the sealing material 10. Spin-on-glass has been conventionally used for step reduction of an interlayer insulating film formed on a semiconductor wiring and filling a groove between wirings, and has high affinity with an existing manufacturing process, and forms a sealing material 10. Therefore, there is little need to change the manufacturing process greatly. And it is excellent in adhesiveness with the glass 1st board | substrate 1, and it is possible to adjust the viscosity easily. For this reason, even when there is a chipped portion 1b at the lower edge of the inner surface of the through hole 1a, the chipped portion 1b can be covered easily and reliably. As a result, the electrode film 5 can be formed without interruption, and the conductive reliability of the signal extraction structure of the semiconductor microelectromechanical device can be improved.

  In the present embodiment, for example, a photosensitive photoresist may be used as the sealing material 10. At this time, the process for forming the sealing material 10 includes only a process for forming a photosensitive photoresist, a patterning process, and a process for removing unnecessary portions, as in a normal photolithographic technique. Since it becomes possible to form the sealing material 10 in this way, it is possible to manufacture a semiconductor microelectromechanical device having high conductivity reliability without interruption of the electrode film 5 at a low cost by a simple manufacturing process. Become.

  FIGS. 3A, 3B, and 3C show a signal extraction structure of a semiconductor microelectromechanical device according to the second embodiment of the present invention. In this signal extraction structure, instead of the electrode pad 4 described above, the area of the upper surface (surface on the main surface side) 14a is larger than the area of the lower surface (surface on the opposite side) 14b, such as a conical shape with the tip cut off. The electrode pad 14 is provided so that the upper portion (the main surface side portion) can be fitted into the through hole 1a.

  4A, 4B, 4C, and 4D show a process of forming the electrode pad 14 on the second substrate 2 in the present embodiment. First, as shown in FIG. 4A, an electrode material 141, which is a material of the electrode pad 14, for example, an Al—Si alloy, is formed on the second substrate 2, and this electrode material 141 is formed. A resist mask 145 is formed on the upper surface of the film. As shown in the figure, the resist mask 145 is formed on the entire surface of the upper surface of the electrode material 141 excluding the part where the electrode pad 14 is to be formed and the vicinity of the part. Next, isotropic etching of the electrode material 141 is performed, and the electrode material 141 is divided into the electrode pad 14 and the unnecessary portion 142 as shown in FIG. At this time, since the electrode material 141 is etched at a constant speed in all directions only from the upper surface of the portion where the resist mask 145 is not provided, the electrode pad 14 has a conical shape with the tip of the upper surface 14a having a smaller area than the lower surface 14b. It becomes a shape.

  Thereafter, the resist mask 145 is removed, and the entire surface of the electrode material 141 is etched in a state where the electrode pad 14 is masked with the mask material 146 as shown in FIG. When the entire surface of the electrode material 141 is etched and the mask material 146 is removed, only the electrode pad 14 remains on the second substrate 2 and the electrode pad 14 is formed as shown in FIG.

  In the present embodiment, the first substrate 1 and the second substrate 2 are bonded together with the electrode pads 14 formed on the second substrate 2 as described above. At this time, since the upper portion of the electrode pad 14 is sized so that it can be fitted into the through hole 1a, the upper surface 14a of the electrode pad is formed on the through hole 1a as shown in FIG. It will be in the state located above a lower end edge part. And after the 1st board | substrate 1 and the 2nd board | substrate 2 were joined in this way, as FIG.3 (c) shows, the electrode film 5 is the whole exposed surface of the upper side of the 1st board | substrate 1. FIG. The film is formed so as to cover the inner surface of the through hole 1a and the exposed portion of the electrode pad 14. Here, as in the first embodiment, the chip 1b is present at the lower edge of the through hole 1a, but the upper surface 14a of the electrode pad 14 is above the chip 1b. 5 is electrically connected to the electrode pad 14 while avoiding the chipped portion 1b.

  Thus, since the upper surface 14a of the electrode pad 14 is formed so as to be positioned above the lower end edge of the through hole 1a, even when the chip 1b is present at the lower end edge of the through hole 1a, It is possible to form the electrode film 5 by easily and reliably securing the conduction between the electrode film 5 and the electrode pad 14 while avoiding the chipped portion 1b, and the conductive reliability of the signal extraction structure of the semiconductor microelectromechanical device can be improved. It becomes possible to improve.

  Here, in the present embodiment, the first substrate 1 and the second substrate 2 may be bonded by anodic bonding, and the electrode pad 14 may be formed of a low melting point material that is softened by heat during anodic bonding. Good. At the time of anodic bonding between the first substrate 1 and the second substrate 2, a high DC voltage is applied between the first substrate 1 and the second substrate 2 after the temperature is raised to several hundred degrees C. An attractive force is generated, and the first substrate 1 and the second substrate 2 are joined. When the electrode pad 14 is softened by the heat at this time, the upper portion of the electrode pad 14 is brought to the main surface side of the first substrate 1 due to electrostatic attraction between the first substrate 1 and the second substrate 2. It deforms inside the through hole 1a so as to approach. Due to this deformation, the electrode pad 14 has a shape in which the upper part is further away from the lower edge of the through hole 1a. As a result, even when there is a chipped portion 1b at the lower end edge of the inner surface of the through hole 1a, the electrode film 5 is secured by easily and reliably ensuring the conduction between the electrode film 5 and the electrode pad 14 by avoiding the chipped portion 1b. It is possible to form a film, and it is possible to improve the conductive reliability of the signal extraction structure of the semiconductor microelectromechanical device.

  FIGS. 5A, 5B, and 5C show a signal extraction structure of a semiconductor microelectromechanical device according to the third embodiment of the present invention. In the present embodiment, the conductive protrusion 20 is formed so as to be electrically connected to the electrode pad 4, and the electrode film 5 covers the exposed portions of the conductive protrusion 20 and the inner surface of the through hole 1a. It is formed to cover. In this semiconductor microelectromechanical device, a first substrate 1 and a second substrate 2 are bonded by anodic bonding.

  The conductive protrusion 20 is formed so that the size thereof is larger than the size of the lower edge portion of the through hole 1a, and is formed of a low melting point material that is softened by heat during anodic bonding. Yes. As shown in FIGS. 5A and 5B, when the first substrate 1 and the second substrate 2 are bonded, the heat at the time of anodic bonding is the same as that of the electrode pad 14 of the second embodiment described above. When the conductive protrusion 20 is softened, the upper portion of the conductive protrusion 20 is on the main surface side of the first substrate 1 due to electrostatic attraction between the first substrate 1 and the second substrate 2. So as to approach the electrode pad 4 while being electrically connected to the electrode pad 4 and deformed inside the through hole 1a. As a result of this deformation, the conductive protrusion 20 has a shape in which the upper part is separated upward from the lower edge end of the through hole 1a. Then, as shown in FIG. 5C, in this state, the electrode film 5 is formed on the exposed portions of the conductive protrusions 20 and the inner surfaces of the through holes 1a. As a result, even when there is a chipped portion 1b at the lower edge of the inner surface of the through hole 1a, the electrode film 5 can be easily and reliably secured to avoid the chipped portion 1b and the electrode film 5 can be secured. It is possible to form a film, and it is possible to improve the conductive reliability of the signal extraction structure of the semiconductor microelectromechanical device.

  At this time, like the conductive protrusions 20, the electrode pads 4 are also formed of a low melting point material, and are softened and deformed inside the through hole 1 a when the first substrate 1 and the second substrate 2 are joined. You may do it. Similarly to the above, it is possible to form the electrode film 5 by easily and reliably ensuring the conduction between the electrode film 5 and the electrode pad 4 while avoiding the chipped portion 1b, and the signal extraction of the semiconductor microelectromechanical device can be performed. It becomes possible to improve the conductive reliability of the structure.

  Here, in the present embodiment, the conductive protrusion 20 may be formed of a material that is not a low melting point material as described above. At this time, since the size of the conductive protrusion 20 is larger than that of the lower edge of the through hole 1a, the conductive protrusion 20 is formed on the electrode pad after the first substrate 1 and the second substrate 2 are joined. 4 is formed. At this time, the upper part of the conductive protrusion 20 is located above the lower edge of the inner surface of the through hole 1a, and in this state, the electrode film 5 is exposed on the inner surface of the conductive protrusion 20 and the through hole 1a. Formed. Thus, similarly to the above, even when there is a chipped portion 1b at the lower end edge portion of the inner surface of the through hole 1a, the chipped portion 1b is avoided and the conduction between the electrode film 5 and the electrode pad 4 is ensured easily and reliably. Thus, the electrode film 5 can be formed, and the conductive reliability of the signal extraction structure of the semiconductor microelectromechanical device can be improved.

  In addition, this invention is not limited to the structure of said each embodiment, A various deformation | transformation is suitably possible in the range which does not change the range of invention. For example, the semiconductor microelectromechanical device according to the present invention is not limited to the above-described uniaxial acceleration sensor, but may be, for example, a biaxial or triaxial acceleration sensor, or a thin film as a structure on the second substrate 2. It may be a formed pressure sensor. In any semiconductor microelectromechanical device, it is possible to improve the reliability of conduction by configuring the electrical signal extraction structure as described above.

1 is a cross-sectional view of a semiconductor microelectromechanical device as a premise of the present invention. (A) is sectional drawing which shows before joining the 1st board | substrate 1 and the 2nd board | substrate 2 of the signal extraction structure of the semiconductor microelectromechanical device which concerns on the 1st Embodiment of this invention, (b) is joining them. The sectional view when the sealing material 10 is formed, and (c) is the sectional view when the electrode film 5 is formed. (A) is sectional drawing which shows before joining of the 1st board | substrate 1 and the 2nd board | substrate 2 of the signal extraction structure of the semiconductor micro electro mechanical device which concerns on the 2nd Embodiment of this invention, (b) is bonding them. FIG. 6C is a cross-sectional view when the electrode film 5 is formed. (A) is a cross-sectional view when the electrode material 141 is formed on the second substrate 2 of the same device, (b) is a cross-sectional view when isotropically etched, (c) is a resist mask of (b) Sectional drawing when 145 is removed, (d) is a sectional view when the unnecessary part 142 of (c) is removed. (A) is sectional drawing which shows before joining the 1st board | substrate 1 and the 2nd board | substrate 2 of the signal extraction structure of the semiconductor microelectromechanical device concerning the 3rd Embodiment of this invention, (b) is joining them. FIG. 6C is a cross-sectional view when the electrode film 5 is formed. (A) is sectional drawing explaining the blasting of the 1st board | substrate 81 of the conventional semiconductor microelectromechanical device, (b) is joining of the 1st board | substrate 1 and the 2nd board | substrate 2 of the signal extraction structure of the device. Sectional drawing which shows the front, (c) is sectional drawing when joining them and forming the electrode film 5. FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 1st board | substrate 1a Through-hole 1b Chipping part (2nd board | substrate joining surface side edge part)
2 Second substrate 4, 14 Electrode pad 5 Electrode film 10 Sealing material 14 a Upper surface (surface on the main surface side)
14b Lower surface (opposite surface)
20 Conductive protrusion

Claims (4)

A first substrate having a through hole is formed from the major surface and the main surface to the opposite surface, a second substrate formed with an electrode pad for taking out an electric signal to the first substrate and the surface to be bonded is are joined, a signal extraction structure of a semiconductor microelectromechanical device of said electrode pad and electrically connected to the electrode film in the through-hole inner surface formed structure,
The electrode pad is smaller the area of the surface of the said main surface side than the area of the opposite surface, and, the main surface portion of the electrode pad has been fitted to the inside of the through hole ,
The semiconductor microelectromechanical device, wherein the electrode film is formed on the main surface side of the first substrate and covers an inner surface of the through hole and an exposed portion of the electrode pad. Signal extraction structure. A first substrate having a through hole is formed from the major surface and the main surface to the opposite surface, a second substrate formed with an electrode pad for taking out an electric signal to the first substrate and the surface to be bonded is are joined, a signal extraction structure of a semiconductor microelectromechanical device of said electrode pad and electrically connected to the electrode film in the through-hole inner surface formed structure,
Wherein on the electrode pads to be electrically connected, the larger conductive protrusions than the dimensions of the second substrate bonding surface side edge portion of the through hole inner surface is formed,
The electrode film, the deposited on the main surface side of the first substrate, a semiconductor microelectronic, characterized in that it is formed so as to cover the exposed portion of the inner surface of the conductive protrusions and the through-hole Mechanical device signal retrieval structure. The first substrate and the second substrate are bonded by anodic bonding,
2. The signal extraction structure of a semiconductor microelectromechanical device according to claim 1, wherein the electrode pad is made of a low melting point material that is softened or melted by heat during anodic bonding. The first substrate and the second substrate are bonded by anodic bonding,
The signal extraction structure for a semiconductor microelectromechanical device according to claim 2, wherein the electrode pad and the conductive protrusion are made of a low melting point material that is softened or melted by heat during anodic bonding .

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