JP2004197117A5

JP2004197117A5 -

Info

Publication number: JP2004197117A5
Application number: JP2002363648A
Authority: JP
Filing date: 2002-12-16
Publication date: 2005-04-07
Anticipated expiration: 2022-12-16

Description

（実施例１）
第１スパッタ室１のターゲット１ｂとして、Ａｇを主成分とし、０．９４ａｔ％(１．７ｗｔ％)のＡｕおよび１．８４ａｔ％(２．０ｗｔ％)のＳｎを添加したターゲット、第２スパッタ室２のターゲット２ｂとして、Ａｇを主成分とし、０．５５ａｔ％(１．０ｗｔ％)のＡｕおよび１．１０ａｔ％(１．２ｗｔ％)のＳｎを添加したターゲット、第３スパッタ室３のターゲット３ｂとして、Ａｇを主成分とし、０．２８ａｔ％(０．５ｗｔ％)のＡｕおよび０．４６ａｔ％(０．５ｗｔ％)のＳｎを添加したターゲットをそれぞれ各スパッタ室内にセットした。 Example 1
As a target 1 b of the first sputtering chamber 1, a target containing Ag as a main component, 0.94 at% (1.7 wt%) of Au and 1.84 at% (2.0 wt%) of Sn added, Second As a target 2 b of the sputtering chamber 2, a target containing Ag as a main component and to which 0.55 at% (1.0 wt%) of Au and 1.10 at% (1.2 wt%) of Sn are added, third sputtering chamber Targets 3b of 3 containing Ag as the main component, 0.28 at% (0.5 wt%) of Au and 0.46 at% (0.5 wt%) of Sn added thereto are respectively set in the respective sputtering chambers did.

（表１）

(Table 1)

（表２）

(注)成膜初期だけ酸素を導入した場合であり、その際の初期層の膜厚は３００Å以下であった。 (Table 2)

(Note) In the case where oxygen was introduced only at the initial stage of film formation, the film thickness of the initial layer at that time was 300 Å or less.

（実施例４）
図１の第１スパッタ室１および第３スパッタ室３のそれぞれのターゲット１ｂ、３ｂとしてＩＴＯ（Ｉｎ_２Ｏ_３＋１０ｗｔ％ＳｎＯ_２）ターゲットを、また、第２スパッタ室２のターゲット２ｂとしてＡｇを主成分とし０．２８ａｔ％（０．５ｗｔ％）のＡｕおよび０．４６ａｔ％（０．５ｗｔ％）のＳｎを添加したＡｇ合金ターゲットをそれぞれセットした。実施例１記載の方法に準じて、但し、添加ガスは使用せずに、ガラス基板７上にＩＴＯ膜（１５ｎｍ）／Ａｇ合金膜１−３（１５０ｎｍ）／ＩＴＯ膜（１５ｎｍ）の積層構造膜を作製した。得られた積層構造膜について反射率を実施例１と同様に測定した。得られた反射膜の反射率は２３５％（Ｓｉリファレンス）であり、Ａｇ合金膜単独の場合と同様に高反射率であった。密着性、耐食性も実施例１の場合と同様に良好であった。また、得られた膜の表面平滑性をＡＦＭで調べたところ、Ｒｍａｘ＝７．０ｎｍ、Ｒａ＝０．７ｎｍと優れていた。本実施例で得られた反射膜は有機ＬＥＤのアノード電極として用いる場合に特に有効である。 (Example 4)
An ITO (In ₂ O ₃ +10 wt% SnO ₂ ) target is used as the targets 1 b and 3 b of the first sputtering chamber 1 and the third sputtering chamber 3 in FIG. 1, and Ag is mainly used as the target 2 b of the second sputtering chamber 2. Ag alloy targets to which 0.28 at% (0.5 wt%) of Au and 0.46 at% (0.5 wt%) of Sn were added as components were respectively set. According to the method described in Example 1, except that no additive gas is used, a laminated structure film of ITO film (15 nm) / Ag alloy film 1-3 (150 nm) / ITO film (15 nm) on the glass substrate 7 Was produced. The reflectance of the obtained laminated structure film was measured in the same manner as in Example 1. The reflectance of the obtained reflective film was 235% (Si reference), and was high as in the case of the Ag alloy film alone. The adhesion and corrosion resistance were also good as in the case of Example 1. Moreover, when the surface smoothness of the obtained film | membrane was investigated by AFM, it was excellent with Rmax = 7.0 nm and Ra = 0.7 nm. The reflective film obtained in this example is particularly effective when used as an anode electrode of an organic LED.

（比較例１）
図１の第１スパッタ室１のターゲット１ｂとして、Ａｇを主成分とし、０．９４ａｔ％(１．７ｗｔ％)のＡｕを添加したターゲット、第２スパッタ室２のターゲット２ｂとして、Ａｇを主成分とし、０．５５ａｔ％(１．０ｗｔ％)のＡｕを添加したターゲット、第３スパッタ室３のターゲット３ｂとして、Ａｇを主成分とし、０．２８ａｔ％(０．５ｗｔ％)のＡｕを添加したターゲットをそれぞれセットし、実施例１と同様な条件で成膜を行い、Ａｇ合金膜１５００Åをガラス基板上へ作製した。但し、酸素ガスの導入量については、０Ｐａ、２．６７×１０^−３Ｐａ、６．６５×１０^−２Ｐａと変えて成膜を行った。
得られた各Ａｇ合金膜の特性を実施例１と同様に調べたところ、反射率、耐食性、エッチング特性は良好であったが、密着性については表３に示すように酸素導入量を増加しても不十分であった。 (Comparative example 1)
As a target 1b of the first sputtering chamber 1 in FIG. 1, a target containing Ag as a main component and to which 0.94 at% (1.7 wt%) of Au is added, and as a target 2b of the second sputtering chamber 2 mainly Ag. The target is a target to which 0.55 at% (1.0 wt%) of Au is added, and the target 3 b of the third sputtering chamber 3 is a main component of Ag, 0.28 at% (0.5 wt%) of Au The targets to which H was added were respectively set, film formation was performed under the same conditions as in Example 1, and an Ag alloy film 1500 Å was formed on a glass substrate. However, the amount of oxygen gas introduced was changed to 0 Pa, 2.67 × 10 ⁻³ Pa, and 6.65 × 10 ⁻² Pa, and film formation was performed.
The characteristics of each of the obtained Ag alloy films were examined in the same manner as in Example 1. As a result, although the reflectance, the corrosion resistance and the etching characteristics were good, the oxygen introduction amount was increased as shown in Table 3 for adhesion. But it was not enough.

（表３）

(Table 3)

（比較例２）
図１の第１スパッタ室１のターゲット１ｂとして、Ａｇを主成分とし、１．８４ａｔ％(２．０ｗｔ％)のＳｎを添加したターゲット、第２スパッタ室２のターゲット２ｂとして、Ａｇを主成分とし、１．１０ａｔ％(１．２ｗｔ％)のＳｎを添加したターゲット、第３スパッタ室３のターゲット３ｂとして、Ａｇを主成分とし、０．４６ａｔ％(０．５ｗｔ％)のＳｎを添加したターゲットをそれぞれセットし、実施例１と同様な条件で成膜を行い、Ａｇ合金膜１５００Åをガラス基板上へ作製した。但し、酸素ガスの導入量については、０Ｐａ、２．６７×１０^−３Ｐａ、６．６５×１０^−２Ｐａと変えて成膜を行った。
得られた各Ａｇ合金膜の特性を実施例１と同様に調べたところ、反射率、密着性、エッチング特性は良好であったが、耐食性については表４に示すように不十分であった。 (Comparative example 2)
As a target 1b of the first sputtering chamber 1 in FIG. 1, a target containing Ag as a main component and to which 1.84 at% (2.0 wt%) of Sn is added, and as a target 2b of the second sputtering chamber 2 mainly Ag As a target, a target to which 1.10 at% (1.2 wt%) of Sn is added, and as a target 3 b of the third sputtering chamber 3, Ag is a main component and 0.46 at% (0.5 wt%) of Sn The targets to which H was added were respectively set, film formation was performed under the same conditions as in Example 1, and an Ag alloy film 1500 Å was formed on a glass substrate. However, the amount of oxygen gas introduced was changed to 0 Pa, 2.67 × 10 ⁻³ Pa, and 6.65 × 10 ⁻² Pa, and film formation was performed.
The characteristics of each of the obtained Ag alloy films were examined in the same manner as in Example 1. As a result, although the reflectance, adhesion and etching characteristics were good, the corrosion resistance was insufficient as shown in Table 4.

（表４）

(Table 4)