JP2004169139A - Production method for high-purity titanium - Google Patents

Production method for high-purity titanium Download PDF

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Publication number
JP2004169139A
JP2004169139A JP2002337547A JP2002337547A JP2004169139A JP 2004169139 A JP2004169139 A JP 2004169139A JP 2002337547 A JP2002337547 A JP 2002337547A JP 2002337547 A JP2002337547 A JP 2002337547A JP 2004169139 A JP2004169139 A JP 2004169139A
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Prior art keywords
titanium
sponge
acid
granular
purity
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JP2002337547A
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Japanese (ja)
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JP3893101B2 (en
Inventor
Shunichiro Yamaguchi
俊一郎 山口
Junzo Hino
順三 日野
Bunji Akimoto
文二 秋元
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Toho Titanium Co Ltd
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Toho Titanium Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for producing high-purity titanium suitable for a sputtering target by efficiently separating impurities from sponge titanium. <P>SOLUTION: The production method comprises the step of forming massive sponge titanium by reducing titanium tetrachloride with metallic magnesium, the step of disintegrating the massive sponge titanium into granular sponge titanium with an average granule size of 2-50 mm, and the step of treating the granular sponge titanium with an acid. <P>COPYRIGHT: (C)2004,JPO

Description

【0001】
【発明の属する技術分野】
本発明は、スポンジチタン中の不純物の分離を効率よく行い、ニッケル、鉄、または酸素等の不純物が極めて少ない高純度でありかつ品質の安定したチタンを得るための高純度チタンの製造方法に関する。
【0002】
【従来の技術】
金属チタンは、耐食性などの優位性から幅広い用途において用いられている材料である。特に航空機用の材料に用いられる金属チタンは、安全性の面で高品質でかつ安定した品質が求められる。また、近年のVLSIに代表される半導体工業の急速な進歩のなかで、例えば、16〜64MビットDRAM等のSiMOS(Metal Oxide Semiconductor)メモリー等の半導体素子やバリヤ材などの形成に用いられるスパッタリング用チタンターゲットやチタンシリサイドターゲットには、特に極めて高い純度のものが要求されている。具体的には、チタンターゲット等の半導体用の金属チタンは、4N5〜6N(99.995%〜99.9999%)レベルの高純度品が要求され、更に、酸素濃度は200ppm以下、Fe、Cr、Ni等の重金属濃度は数ppm以下、好ましくは1ppm以下であることが要求されている。
【0003】
近年、これらスパッタリング用チタンターゲットに用いる高純度チタン材を高純度化する種々の技術が開示されている。特許文献1の特公平7−103432号公報には、スパッタリングターゲット用高純度チタン材が開示されており、具体的にはクロール法などで製造したチタン原料を溶融塩電解法またはアイオダイド法により粗チタン粒とし、これを塩酸とフッ酸の混酸により酸処理して表面の不純物を除去して製造する方法が開示されている。また特許文献2の特開2000−87271号公報には、溶融塩電解法で得られたチタン材をフッ酸および硝酸の混酸に浸漬させ、その後酸を順次水に置換してチタン材を洗浄する方法が開示されている。
【0004】
上記の従来技術によるチタン材は高純度であり、品質的にはスパッタリング用チタンターゲット用に適している。しかしながら、クロール法などで得られたチタン原料を、さらに溶融塩電解法やアイオダイド法によりチタンを精製するため、製造コストがかかり、最終的に得られる高純度チタン材の価格は極めて高く、工業的にスパッタリング用チタンターゲットとして用いられていない。
【0005】
そこで、スパッタリング用チタンターゲットに用いる高純度チタンを安価に製造するため、種々の試みがなされている。例えば、特許文献3の特開平9−104931号公報には、クラッド鋼で構成された反応容器を用いて製造されたスポンジチタンの円筒状塊の底部から厚さが塊高さの25%以上の部分と頂部から厚さが塊高さの10%以上の部分とを切断除去し、かつ円筒状塊の円周部から厚さが塊直径の18%以上の円周部分を切断除去してのち、前記の円筒状塊重量の30%未満に相当する中心部分のスポンジチタンを採取し、切断プレスで粒径10〜 300mmに切断したのち溶解原料とする高純度チタン材の製造方法が開示されている。クロール法では、スポンジチタンを反応容器内で還元反応して生成する際、反応容器の金属成分が溶出してスポンジチタンを汚染する。特開平9−104931号公報では、反応容器に起因する不純物成分は円筒状スポンジチタン塊の外周部に堆積するとの分析から、不純物成分の比較的少ない中心部を採取し、高純度チタン材を得るというものである。この結果反応容器からの不純物は低減され、安価なスパッタリング用チタンターゲット用高純度チタンを得ることができる。
【0006】
【特許文献1】
特公平7−103432号公報(特許請求の範囲、第4頁第7欄、実施例)
【特許文献2】
特開2000−87271号公報(特許請求の範囲、実施例)
【特許文献3】
特開平9−104931号公報(特許請求の範囲)
【0007】
【発明が解決しようとする課題】
しかしながら、従来のクロール法で得られるスポンジチタンを溶融して製造される高純度チタン材は、スパッタリング用チタンターゲットとして用いるには未だ十分に高純度化されているとは言えないものである。特に、ニッケルなどの不純物がチタン材に残留することがあり、チタン薄膜形成に重大な欠陥を招来する恐れがあった。すなわち従来の方法ではニッケルなどの不純物成分の低減には限界があり、クロール法においてさらなるチタンの高純度化が望まれていた。
【0008】
従って、本発明の解決しようとする課題は、塊状スポンジチタンに残留するニッケルなどの不純物を効率よく除去し、高純度で且つ安定した品質の高純度チタンを製造する方法を提供することにある。
【0009】
【課題を解決するための手段】
かかる実情において、本発明者らは鋭意検討を行なった結果、(1)クロール法において、汚染の原因は反応容器からの溶出のみではなく、還元反応時に用いられる金属マグネシウムおよび副生される塩化マグネシウムも汚染の原因となること、(2)クロール法によるスポンジチタンの製造工程は、四塩化チタンと金属マグネシウムを高温で反応させ、先ず粉状の金属チタンが生成される。この粉状金属チタンは反応容器内で沈降し堆積するが、高温雰囲気のため焼結し、細孔を有するスポンジ状の塊となる。このとき溶融した金属マグネシウムおよび溶融した塩化マグネシウムが細孔内に閉じ込められしまう。このようなスポンジチタンをそのまま溶解原料とすると、金属マグネシウム中のニッケル成分がそのまま金属チタンに混入したり、また塩化マグネシウムが空気や水分と接触して結果的にチタン中の酸素含有量が増加すること、(3)さらに、生成したスポンジチタンを従来行なわれている再度減圧下で加熱処理することにより、金属マグネシウムや塩化マグネシウムを除去しても、結果として微量のニッケルなどの不純物成分はスポンジチタンの細孔に残留してしまうこと、(4)これら塊状スポンジチタンの細孔に残留したニッケルなどの不純物は、その後解砕して特定の粒径の顆粒状スポンジチタンとし、これを酸処理すれば、塊状スポンジチタンに残留するニッケルなどの不純物を効率よく除去でき、高純度で且つ安定した品質の高純度チタンを得ることができること等を見出し、本発明を完成するに至った。
【0010】
すなわち、本発明は、四塩化チタンを金属マグネシウムで還元して塊状スポンジチタンを生成させる塊状スポンジチタン生成工程と、該塊状スポンジチタンを解砕して平均粒径2〜50mmの顆粒状スポンジチタンに調整する解砕工程と、該顆粒状スポンジチタンを酸で処理する酸処理工程を有する高純度チタンの製造方法を提供するものである。
【0011】
【発明の実施の形態】
本発明において、塊状スポンジチタン生成工程は、四塩化チタンを金属マグネシウムで還元して塊状スポンジチタンを生成させる工程である。すなわち、塊状スポンジチタンは、加熱炉内に設置された反応容器にマグネシウムを入れ、不活性ガスを導入しながら、900℃前後の温度に加熱し、そこに四塩化チタンを滴下し、溶融金属マグネシウムで還元する所謂クロール法により生成させる。バッチサイズは、設備規模、操作性等を考慮して、通常3トン/バッチ以上、好ましくは3〜10トン/バッチである。
【0012】
反応容器内で塊状スポンジチタンを生成させた後、副生する塩化マグネシウム及び未反応の金属マグネシウムを反応容器から抜出す未反応物等除去工程を実施する。この塩化マグネシウムは還元反応中、生成量が多くなると金属チタン生成反応を阻害するため、反応中に随時抜出す。また、四塩化チタンの滴下が終了し還元反応が終了した後、残りの溶融塩化マグネシウムを抜出す。この抜出し方法は通常、反応容器内の底部に溜まっている溶融塩化マグネシウムを加圧下で押出すことで行なわれる。
【0013】
還元反応が終了し、且つ未反応物等除去工程を行なった後、塊状スポンジチタンを抜出すが、該抜出しに先立ち、反応容器内を減圧、加熱し、生成塊状スポンジチタン表面および細孔中の塩化マグネシウム等を蒸発させ、分離除去する工程を実施することが、残りの塩化マグネシウムを薬液を使用することなく、可能な限り除去できる点で有用である。この分離除去工程の条件としては、真空度1.3〜1.3×10−2Pa(10−2〜10−4Torr)、加熱温度1000〜1100℃、加熱時間10〜100時間である。また、この分離除去工程は、例えば反応容器と連結管を介して連通する反応容器と同等もしくは類似の容器である凝縮器と、該凝縮器内を減圧する減圧手段と、該凝縮器の外面を冷却する水冷手段を設けた装置で行なうことができる。この装置を用いることにより、反応容器から抜出された塩化マグネシウム蒸気等は水冷された凝縮器内の内壁に凝固する。
【0014】
分離除去工程後、塊状スポンジチタンを常温まで冷却し、反応容器底部から挿入したパンチにより突き上げ、反応容器上端から取り出し、解砕工程を実施する。解砕工程は、例えば上記方法で取り出した塊状スポンジチタンを作業盤上で解砕することによって、塊状スポンジチタンを微細化し、平均粒径2〜50mm、好ましくは4〜19mm、粒径範囲0.1〜100mm、好ましくは1〜50mmの顆粒に調整する工程である。
【0015】
塊状スポンジチタンを解砕する方法としては、特に制限されず、通常塊状スポンジチタンを大型プレス切断機である程度の大きさの塊状物に切断し、次いでこの塊状物をジョークラッシャーあるいはダブルロールクラッシャー等の破砕機または破砕整粒機により最終的に上記平均粒径の範囲に調整する。
【0016】
解砕工程は大気中または除湿下で行なう。このうち、除湿下で行なうことが、大気中の水分がスポンジチタン、スポンジチタン中に残存する微量の塩化マグネシウムあるいは未反応のマグネシウムと接触し、スポンジチタンを汚染し、スポンジチタン中の酸素含有量を増加することを防止する点で好ましい。除湿条件は、例えば雰囲気中の絶対湿度を10g−H0/m以下にすればよく、この条件は例えばエアーコンディショナー、除湿機または乾燥空気の供給等で制御することができる。
【0017】
塊状スポンジチタンをより微細化したほうが、後の酸処理で不純物は除去し易いが、平均粒径を2mm未満とすると、逆に空気中の窒素、水分あるいは酸素と接触しスポンジチタンが窒素、水分あるいは酸素で汚染されてしまう。他方、平均粒径が50mmを超えると、後の酸処理での不純物除去が困難となり、また必要に応じて減圧下での加熱処理を行う場合、スポンジチタンが焼結凝集してしまい、加熱処理を行なった容器からスポンジチタンを抜出すことが困難となる。4〜19mmに整寸すると、操業性が安定し、一層効果的である。すなわち、解砕工程で上記平均粒径の範囲に制御することにより、窒素、水分および酸素による汚染を最低限に抑えると共に、酸処理した際、スポンジチタンの細孔に効率的に酸が浸透し、不純物を効率的に除去できるという効果が得られる。
【0018】
次いで粒径を調整した顆粒状スポンジチタンを酸で処理する酸処理工程を行なう。スポンジチタンは前述したように粉状チタンが焼結して生成したものであり、その内部には通常直径30〜40μm、細孔容積0.18〜0.22ml/gのような多くの細孔を有する。上記のように塊状スポンジチタンは分離除去工程において精製されるが、金属マグネシウム中にニッケル成分が含有されている場合、この分離除去工程での分離操作によってマグネシウム成分は除去されるが、ニッケル成分についてはスポンジチタンの表面および細孔内部に残存してしまい、結果として高純度のものは得られない。本発明はこの点に着目し、上記のようにスポンジチタンを平均粒径が特定範囲にある顆粒状にし、酸処理を行い、スポンジチタン中の不純物、特に細孔中に残存するニッケルなどの不純物を除去するようにしたものである。
【0019】
酸処理工程としては、例えば(1)酸水溶液に該顆粒状スポンジチタンを浸漬させる方法、(2)酸水溶液に該顆粒状スポンジチタンを浸漬させ、超音波振動する方法、(3)酸水溶液に該顆粒状スポンジチタンを浸漬させ、これを減圧処理する方法、(4)酸水溶液に該顆粒状スポンジチタンを浸漬させ、これを減圧処理下で超音波振動するか、または減圧処理した後、超音波振動する方法および(5)減圧下で該顆粒状スポンジチタンに酸水溶液または酸の蒸気を供給する方法が挙げられる。この中、(2)〜(5)の方法が好ましい。通常、酸の水溶液中にスポンジチタンを浸漬させただけでは、スポンジチタンの細孔中には酸が浸透しにくいが、上記(2)〜(5)の方法であれば、酸水溶液または酸の蒸気を細孔内部にくまなく浸透させることができ、細孔中に残存する極々微量のニッケル等の不純物を除去することができる。また、特に(4)の方法とすれば、細孔中の空気を抜きつつまたは抜いた後に超音波振動を与えることができ、一層確実に細孔に酸を浸透させることができる。上記(2)〜(5)の方法を実施する装置としては、超音波発信装置を具備した容器を用いるか、減圧手段を具備した減圧容器を用いるか、あるいは超音波発信装置を具備すると共に、減圧手段を具備した容器を用いればよい。超音波振動条件あるいは減圧条件としては、特に制限されず、超音波発信出力、減圧度、処理時間など適宜の条件を決定すればよい。
【0020】
本酸処理工程において用いられる酸としては、硝酸、塩酸、硫酸およびフッ酸などの鉱酸;硝酸と塩酸、硝酸とフッ酸、硝酸と硫酸および塩酸とフッ酸などの混酸が挙げられる。これらの中、ニッケルなどの不純物金属のみを溶解し、金属チタンを溶解しない酸が好ましく、特に好ましい酸は硝酸である。また、これらの酸は水溶液、または加熱し蒸気にして用いられる。酸の濃度としては、特に制限されないが、水溶液の場合、好ましくは0.3〜7.5N、特に好ましくは0.7〜3.0Nである。また処理温度は水溶液の場合、0〜100℃、好ましくは10〜50℃である。
【0021】
酸処理工程を経た顆粒状スポンジチタンは必要に応じて水洗する。また水洗の後、あるいは水洗を行うことなしに上記酸処理工程を経た顆粒状スポンジチタンを、減圧下で加熱処理する乾燥工程を行なうことが好ましい。減圧下で加熱処理を行うことにより、スポンジチタンの細孔内部に残留している塩化マグネシウムや未反応のマグネシウムを更に除去することができ、一層不純物の少ない高純度チタンを得ることができる。乾燥工程は別途の加熱処理容器において行なうことができる。顆粒状のスポンジチタンを、減圧下で加熱処理する条件としては、特に制限されないが、例えば真空度1.3〜1.3×10−2Pa、通常1.3×10−2Pa、加熱温度600〜1100℃、好ましくは900〜1050℃、加熱時間10〜100時間である。
【0022】
上記のように減圧下で加熱処理する前に、顆粒状スポンジチタンを加熱処理容器に投入するが、投入後、容器内をアルゴンガスで置換をすることが、空気中の酸素および窒素でスポンジチタンが汚染されることを防止することができる点で好ましい。さらに、スポンジチタンおよび加熱処理容器中の水分を除去するため、上記加熱処理の前に300〜500℃程度の低温で予備処理することも好ましい態様の一つである。
【0023】
また、本発明の高純度チタンの製造方法は、前記酸処理工程または前記乾燥工程を経た顆粒状スポンジチタンを、真空アーク溶解または電子ビーム溶解により溶解させる溶解工程を行うものである。該工程を経て高純度チタンのインゴットを得る。溶解工程のうち電子ビーム溶解は、最終的な高純度チタン中の酸素含有量を低減できる点で有利である。
【0024】
さらに、上記のようにして得られた高純度チタン(インゴット)を、熱間鍛造または冷間鍛造により任意の形状に加工する。スパッタリングターゲットは、スパッタリングを行う際、スパッタ粒子が散乱しないようなものが好ましい。そのためにはターゲットを形成した際のチタンの結晶粒子が均一で微細であることが要求され、さらに結晶方位含有率のばらつきが少ないことが望ましい。具体的なスパッタリングターゲットの加工方法としては、高純度チタンを700℃程度の温度で熱間鍛造し、結晶粒度を均一化し、その後400〜500℃でさらに鍛造した後、最後に700℃付近で熱処理を施す。
【0025】
以上のように本発明の方法で得られた高純度チタンは不純物成分の含有量が極めて少ない。具体的には、ニッケル成分が1ppm以下、好ましくは0.5ppm以下、鉄成分が6ppm以下、好ましくは4ppm以下、酸素の含有量が300ppm以下、好ましくは200ppm以下である。このため、スパッタリングターゲット用として適している。
【0026】
【実施例】
次に、実施例を挙げて本発明を更に具体的に説明するが、これは単に例示であって、本発明を制限するものではない。
実施例1
還元反応容器内において四塩化チタンと溶融金属マグネシウムを還元反応し、塊状スポンジチタンを生成させた(塊状スポンジチタン生成工程)。この後、溶融塩化マグネシウムおよび未反応の溶融金属マグネシウムを抜き出し(未反応物等除去工程)、1.3×10−1Paの減圧下、1055℃で80時間加熱処理を行い不純物を分離した(分離除去工程)。塊状スポンジチタンを還元反応容器から抜き出し、切断機にて塊状に切断および解砕した。その後、ジョークラッシャーにて解砕して、平均粒径10mm、粒径範囲4〜19mmの顆粒に調整した(解砕工程)。次いで、顆粒状スポンジチタンを、超音波発信装置(UE−1200Z26S−4A型、最高出力1.2KW;超音波工業社製)を具備した容器内に充填し、これに硝酸水溶液0.6Nをスポンジチタンが浸漬されるまで充填し、180分、超音波振動により処理を行った(酸処理工程)。その後純水にてスポンジチタンを十分に洗浄して、300℃で10時間加熱して乾燥し最終製品とした。得られた最終製品の不純物成分、Ni、Feおよび酸素の含有量を測定した。その結果を表1に示す。
【0027】
実施例2
実施例1で得た最終製品である高純度スポンジチタンを還元反応容器に充填した。その後還元反応容器内をアルゴンガスで置換し、次いで真空度1.3×10−1Paの減圧下で400℃まで加熱し、50時間経過後再度アルゴンガスを装入した。その後、還元反応容器内及び冷却凝縮装置内を真空度1.3×10−1Paの減圧にし、700℃で2時間、800℃で2時間、900℃で2時間、最後に1000℃に昇温し、40時間減圧下での加熱処理を行った(乾燥工程)。乾燥工程終了後、常温まで冷却した後、容器内のスポンジチタンを抜き出し解砕してスポンジチタンの最終製品とした。得られた最終製品の不純物成分、Ni、Feおよび酸素の含有量を測定した。その結果を表1に示す。
【0028】
実施例3
実施例1記載の酸処理工程に代えて、顆粒状スポンジチタンを超音波発信装置を具備した容器内に充填し、これに硝酸水溶液0.6Nをスポンジチタンが浸漬されるまで充填した後、容器内を真空度1Paの減圧にして3時間脱気し、その後、減圧状態を維持しつつ180分、超音波振動により処理を行う酸処理工程を行なった以外は、実施例1と同様の方法で行なった。得られた最終製品の不純物成分、Ni、Feおよび酸素の含有量を測定した。その結果を表1に示す。
【0029】
実施例4
超音波振動を施さなかった以外は,実施例1と同様の方法で行い、顆粒状スポンジチタンを得た。すなわち、実施例4の酸処理方法は、硝酸水溶液0.6Nに顆粒状スポンジチタンを180分間浸漬処理したものである。得られた最終製品の不純物成分、Ni、Feおよび酸素の含有量を測定した。その結果を表1に示す。
【0030】
比較例1
酸処理工程以降の処理を行わなかった以外は、実施例1と同様の方法で行い、顆粒状スポンジチタンを得た。得られた最終製品の不純物成分、Ni、Feおよび酸素の含有量を測定した。その結果を表1に示す。
【0031】
【表1】

Figure 2004169139
【0032】
【発明の効果】
以上のように、本発明では、四塩化チタンと金属マグネシウムを還元するクロール法による塊状スポンジチタンの製造方法において、塊状スポンジチタンを解砕して、平均粒径2〜50mmの顆粒状に調整した後、酸で処理することにより、不純物が効率的に除去でき、結果としてニッケルなどの不純物の少ない極めて高純度のチタンが効率よく製造でき、スパッタリングターゲットの材料として有用である。[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a method for producing high-purity titanium for efficiently separating impurities in titanium sponge and obtaining high-purity titanium with high purity and stable quality, which has very few impurities such as nickel, iron or oxygen.
[0002]
[Prior art]
Metal titanium is a material used in a wide range of applications because of its superiority such as corrosion resistance. Particularly, metal titanium used for aircraft materials is required to have high quality and stable quality in terms of safety. Further, in the rapid progress of the semiconductor industry represented by VLSI in recent years, for example, a sputtering device used for forming a semiconductor element such as a SiMOS (Metal Oxide Semiconductor) memory such as a 16-64 Mbit DRAM or a barrier material. Titanium targets and titanium silicide targets are particularly required to have extremely high purity. Specifically, metal titanium for a semiconductor such as a titanium target is required to be a high-purity 4N5-6N (99.995% -99.9999%) level, and further, the oxygen concentration is 200 ppm or less, Fe, Cr , Ni and the like are required to have a concentration of several ppm or less, preferably 1 ppm or less.
[0003]
In recent years, various techniques for highly purifying a high-purity titanium material used for the titanium target for sputtering have been disclosed. Japanese Patent Publication No. Hei 7-103432 of Patent Document 1 discloses a high-purity titanium material for a sputtering target. Specifically, a titanium raw material produced by a crawl method or the like is treated with a molten titanium electrolytic method or an iodide method. There is disclosed a method of producing granules by treating the granules with a mixed acid of hydrochloric acid and hydrofluoric acid to remove impurities on the surface. Japanese Patent Application Laid-Open No. 2000-87271 discloses that a titanium material obtained by a molten salt electrolysis method is immersed in a mixed acid of hydrofluoric acid and nitric acid, and then the acid is sequentially replaced with water to wash the titanium material. A method is disclosed.
[0004]
The above-mentioned conventional titanium material has high purity and is suitable for a titanium target for sputtering in terms of quality. However, since the titanium raw material obtained by the Kroll method and the like is further purified by the molten salt electrolysis method and the iodide method, the production cost is high, and the price of the high-purity titanium material finally obtained is extremely high. Not used as a titanium target for sputtering.
[0005]
Therefore, various attempts have been made to inexpensively produce high-purity titanium used for a titanium target for sputtering. For example, Japanese Patent Application Laid-Open No. Hei 9-104931 of Patent Document 3 discloses that a thickness of a sponge titanium tube having a thickness of 25% or more from the bottom of a cylindrical lump manufactured using a reaction vessel made of clad steel is used. After cutting and removing from the portion and the top a portion having a thickness of 10% or more of the lump height, and cutting and removing a circumferential portion having a thickness of 18% or more of the lump diameter from the circumference of the cylindrical lump, A method for producing a high-purity titanium material which is obtained by collecting sponge titanium at a central portion corresponding to less than 30% of the weight of the cylindrical mass, cutting the same into a particle size of 10 to 300 mm by a cutting press, and then using it as a raw material for melting. I have. In the Kroll method, when titanium sponge is produced by a reduction reaction in a reaction vessel, metal components in the reaction vessel elute and contaminate the titanium sponge. In Japanese Patent Application Laid-Open No. 9-104931, an analysis is made on the fact that impurity components originating in a reaction vessel are deposited on the outer peripheral portion of a cylindrical titanium sponge mass. That is. As a result, impurities from the reaction vessel are reduced, and inexpensive high-purity titanium for a sputtering titanium target can be obtained.
[0006]
[Patent Document 1]
Japanese Patent Publication No. 7-103432 (Claims, page 4, column 7, examples)
[Patent Document 2]
Japanese Patent Application Laid-Open No. 2000-87271 (Claims, Examples)
[Patent Document 3]
JP-A-9-104931 (Claims)
[0007]
[Problems to be solved by the invention]
However, a high-purity titanium material produced by melting sponge titanium obtained by a conventional crawl method has not yet been sufficiently purified to be used as a titanium target for sputtering. In particular, impurities such as nickel may remain in the titanium material, which may cause serious defects in forming the titanium thin film. That is, there is a limit to the reduction of impurity components such as nickel in the conventional method, and further higher purity of titanium has been desired in the Kroll method.
[0008]
Accordingly, an object of the present invention is to provide a method for efficiently removing impurities such as nickel remaining in massive titanium sponge and producing high-purity titanium with high purity and stable quality.
[0009]
[Means for Solving the Problems]
Under such circumstances, the present inventors have conducted intensive studies. As a result, in the (1) Kroll method, the cause of contamination is not only elution from the reaction vessel, but also metal magnesium used during the reduction reaction and magnesium chloride produced as a by-product. (2) In the production process of titanium sponge by the Kroll method, titanium tetrachloride and magnesium metal are reacted at a high temperature, and powdery metal titanium is first produced. This powdery metallic titanium settles and accumulates in the reaction vessel, but sinters due to the high temperature atmosphere to form a sponge-like mass having pores. At this time, the molten metal magnesium and the molten magnesium chloride are confined in the pores. If such sponge titanium is used as a raw material for dissolution as it is, the nickel component in the metal magnesium is directly mixed into the metal titanium, or magnesium chloride comes into contact with air or moisture, resulting in an increase in the oxygen content in the titanium. (3) Furthermore, even if metallic magnesium or magnesium chloride is removed by subjecting the generated sponge titanium to a heat treatment again under reduced pressure, which has been conventionally performed, as a result, a small amount of impurity components such as nickel are reduced to sponge titanium. (4) The impurities such as nickel remaining in the pores of the massive titanium sponge are then crushed into granular titanium sponge having a specific particle size, which is then subjected to acid treatment. In this way, it is possible to efficiently remove impurities such as nickel remaining in massive titanium sponge, and to obtain high-purity and stable quality. It found such that it is possible to obtain a degree of titanium, and have completed the present invention.
[0010]
In other words, the present invention provides a bulk titanium sponge producing step of reducing titanium tetrachloride with metallic magnesium to produce a massive titanium sponge, and crushing the massive titanium sponge to a granular titanium sponge having an average particle diameter of 2 to 50 mm. An object of the present invention is to provide a method for producing high-purity titanium, comprising a crushing step of adjusting and an acid treatment step of treating the granular sponge titanium with an acid.
[0011]
BEST MODE FOR CARRYING OUT THE INVENTION
In the present invention, the massive titanium sponge producing step is a step of producing massive titanium sponge by reducing titanium tetrachloride with metallic magnesium. That is, massive titanium sponge is prepared by putting magnesium in a reaction vessel installed in a heating furnace, heating the mixture to a temperature of about 900 ° C. while introducing an inert gas, dropping titanium tetrachloride there, and adding molten metal magnesium. By the so-called Kroll method. The batch size is usually 3 tons / batch or more, preferably 3 to 10 tons / batch in consideration of equipment scale, operability and the like.
[0012]
After generating massive titanium sponge in the reaction vessel, a step of removing unreacted substances such as magnesium chloride produced as a byproduct and unreacted metallic magnesium is extracted from the reaction vessel. During the reduction reaction, if the amount of the generated magnesium chloride is increased, the magnesium chloride inhibits the metal titanium formation reaction. After the dropping of titanium tetrachloride is completed and the reduction reaction is completed, the remaining molten magnesium chloride is extracted. This withdrawal method is usually performed by extruding molten magnesium chloride stored at the bottom of the reaction vessel under pressure.
[0013]
After the reduction reaction is completed, and after performing a step of removing unreacted materials, etc., the massive titanium sponge is extracted.Before the extraction, the inside of the reaction vessel is depressurized and heated, and the produced massive titanium sponge surface and pores are removed. It is useful to carry out a step of evaporating magnesium chloride and the like to separate and remove the remaining magnesium chloride as much as possible without using a chemical solution. The conditions for this separation and removal step are a degree of vacuum of 1.3 to 1.3 × 10 −2 Pa (10 −2 to 10 −4 Torr), a heating temperature of 1000 to 1100 ° C., and a heating time of 10 to 100 hours. Further, the separation and removal step includes, for example, a condenser which is a container equivalent or similar to a reaction vessel communicating with the reaction vessel via a connection pipe, a decompression means for depressurizing the inside of the condenser, and an outer surface of the condenser. It can be performed by an apparatus provided with a water cooling means for cooling. By using this apparatus, the magnesium chloride vapor extracted from the reaction vessel solidifies on the inner wall of the water-cooled condenser.
[0014]
After the separation and removal step, the massive titanium sponge is cooled to room temperature, pushed up by a punch inserted from the bottom of the reaction vessel, taken out from the upper end of the reaction vessel, and subjected to a crushing step. In the crushing step, for example, the lumpy sponge titanium taken out by the above method is crushed on a work board to make the lumpy sponge titanium fine, and the average particle size is 2 to 50 mm, preferably 4 to 19 mm, and the particle size range is 0. This is a step of adjusting the particle size to 1 to 100 mm, preferably 1 to 50 mm.
[0015]
The method for crushing the massive sponge titanium is not particularly limited, and usually, the massive sponge titanium is cut into a large-sized mass by a large press cutting machine, and then the mass is jaw crusher or double roll crusher or the like. It is finally adjusted to the above average particle size range by a crusher or a crusher / sizing machine.
[0016]
The crushing step is performed in the air or under dehumidification. Of these, when performed under dehumidification, the moisture in the atmosphere comes into contact with titanium sponge, a small amount of magnesium chloride or unreacted magnesium remaining in titanium sponge, contaminates titanium sponge, and oxygen content in titanium sponge. Is preferable in that the increase in The dehumidification condition may be, for example, an absolute humidity in the atmosphere of 10 g-H 2 0 / m 3 or less, and this condition can be controlled by, for example, an air conditioner, a dehumidifier, or supply of dry air.
[0017]
It is easier to remove impurities in the subsequent acid treatment by making the massive sponge titanium finer, but when the average particle diameter is less than 2 mm, the sponge titanium comes into contact with nitrogen, moisture or oxygen in the air, and the sponge titanium becomes nitrogen and moisture. Or it is contaminated with oxygen. On the other hand, if the average particle size exceeds 50 mm, it becomes difficult to remove impurities in the subsequent acid treatment, and if necessary, if heat treatment is performed under reduced pressure, sponge titanium will be sintered and aggregated, and heat treatment will be performed. It is difficult to extract the sponge titanium from the container in which the process was performed. When the size is set to 4 to 19 mm, the operability is stable and more effective. That is, by controlling the average particle diameter in the range of the above-mentioned crushing step, the contamination by nitrogen, moisture and oxygen is minimized, and when the acid treatment is performed, the acid efficiently penetrates into the pores of the titanium sponge. This has the effect that impurities can be efficiently removed.
[0018]
Next, an acid treatment step of treating the granular titanium sponge with the adjusted particle size with an acid is performed. As described above, sponge titanium is formed by sintering powdered titanium, and usually contains many pores having a diameter of 30 to 40 μm and a pore volume of 0.18 to 0.22 ml / g. Having. As described above, the massive titanium sponge is purified in the separation and removal step, but when the nickel component is contained in the metallic magnesium, the magnesium component is removed by the separation operation in this separation and removal step, but the nickel component is removed. Remains on the surface of the titanium sponge and inside the pores, and as a result, high-purity titanium cannot be obtained. The present invention pays attention to this point, and makes the sponge titanium into a granule having an average particle size in a specific range as described above, performs an acid treatment, impurities in the sponge titanium, particularly impurities such as nickel remaining in pores. Is to be removed.
[0019]
As the acid treatment step, for example, (1) a method in which the granular sponge titanium is immersed in an aqueous acid solution, (2) a method in which the granular sponge titanium is immersed in an aqueous acid solution, and ultrasonic vibration, (4) a method of immersing the granular sponge titanium and treating it under reduced pressure; (4) immersing the granular sponge titanium in an aqueous acid solution and subjecting the granular sponge titanium to ultrasonic vibration or reduced pressure treatment, A method of sonic vibration and (5) a method of supplying an aqueous acid solution or an acid vapor to the granular sponge titanium under reduced pressure. Among them, the methods (2) to (5) are preferable. Usually, it is difficult for the acid to penetrate into the pores of the titanium sponge simply by immersing the titanium sponge in the aqueous solution of an acid. However, according to the above methods (2) to (5), the acid aqueous solution or the acid Vapors can be thoroughly penetrated into the pores, and extremely small amounts of impurities such as nickel remaining in the pores can be removed. In particular, in the case of the method (4), ultrasonic vibration can be given while or after the air in the pores is removed, so that the acid can be more reliably penetrated into the pores. As a device for carrying out the above methods (2) to (5), a container equipped with an ultrasonic transmitting device, a reduced pressure container equipped with a decompression means, or an ultrasonic transmitting device is used, What is necessary is just to use the container provided with the decompression means. The ultrasonic vibration condition or the decompression condition is not particularly limited, and appropriate conditions such as an ultrasonic transmission output, a degree of decompression, and a processing time may be determined.
[0020]
Examples of the acid used in the acid treatment step include mineral acids such as nitric acid, hydrochloric acid, sulfuric acid and hydrofluoric acid; mixed acids such as nitric acid and hydrochloric acid, nitric acid and hydrofluoric acid, nitric acid and sulfuric acid, and hydrochloric acid and hydrofluoric acid. Among these, an acid that dissolves only an impurity metal such as nickel and does not dissolve metallic titanium is preferable, and a particularly preferable acid is nitric acid. These acids are used in the form of an aqueous solution or a heated vapor. The concentration of the acid is not particularly limited. In the case of an aqueous solution, the concentration is preferably 0.3 to 7.5 N, particularly preferably 0.7 to 3.0 N. In the case of an aqueous solution, the treatment temperature is 0 to 100 ° C, preferably 10 to 50 ° C.
[0021]
The granular sponge titanium that has undergone the acid treatment step is washed with water as necessary. Further, it is preferable to perform a drying step of heating the granular sponge titanium that has been subjected to the above-mentioned acid treatment step under reduced pressure after or without water washing. By performing the heat treatment under reduced pressure, magnesium chloride and unreacted magnesium remaining inside the pores of titanium sponge can be further removed, and high-purity titanium with less impurities can be obtained. The drying step can be performed in a separate heat treatment container. Granular titanium sponge, as the conditions for heat treatment under reduced pressure is not particularly limited, for example, a vacuum degree of 1.3~1.3 × 10 -2 Pa, typically 1.3 × 10 -2 Pa, the heating temperature The heating time is 600 to 1100 ° C, preferably 900 to 1050 ° C, and the heating time is 10 to 100 hours.
[0022]
Before the heat treatment under reduced pressure as described above, the granular titanium sponge is charged into the heat treatment container, and after the charge, the inside of the container can be replaced with argon gas, and the sponge titanium is replaced with oxygen and nitrogen in the air. Is preferred in that it can be prevented from being contaminated. Further, in order to remove water in the titanium sponge and the heat treatment container, it is also a preferable embodiment to perform a preliminary treatment at a low temperature of about 300 to 500 ° C. before the heat treatment.
[0023]
Further, the method for producing high-purity titanium of the present invention includes a step of dissolving the granular sponge titanium that has undergone the acid treatment step or the drying step by vacuum arc melting or electron beam melting. Through this step, an ingot of high-purity titanium is obtained. Among the melting steps, electron beam melting is advantageous in that the oxygen content in the final high-purity titanium can be reduced.
[0024]
Further, the high-purity titanium (ingot) obtained as described above is processed into an arbitrary shape by hot forging or cold forging. The sputtering target is preferably one that does not scatter sputtered particles during sputtering. For that purpose, it is required that the titanium crystal grains when forming the target are uniform and fine, and it is desirable that the variation in the crystal orientation content is small. As a specific sputtering target processing method, high-purity titanium is hot-forged at a temperature of about 700 ° C. to make the crystal grain size uniform, and then forged at 400 to 500 ° C., and finally heat-treated at about 700 ° C. Is applied.
[0025]
As described above, the high-purity titanium obtained by the method of the present invention has an extremely low content of impurity components. Specifically, the nickel component is 1 ppm or less, preferably 0.5 ppm or less, the iron component is 6 ppm or less, preferably 4 ppm or less, and the oxygen content is 300 ppm or less, preferably 200 ppm or less. Therefore, it is suitable for a sputtering target.
[0026]
【Example】
Next, the present invention will be described in more detail with reference to examples. However, this is merely an example and does not limit the present invention.
Example 1
The titanium tetrachloride and the molten metal magnesium were subjected to a reduction reaction in the reduction reaction vessel to produce a massive titanium sponge (a massive titanium sponge forming step). Thereafter, the molten magnesium chloride and unreacted molten metal magnesium were extracted (unreacted material removal step), and a heat treatment was performed at 1055 ° C. for 80 hours under a reduced pressure of 1.3 × 10 −1 Pa to separate impurities ( Separation and removal step). The massive titanium sponge was taken out of the reduction reaction vessel, cut and crushed by a cutter. Thereafter, the mixture was crushed with a jaw crusher to prepare granules having an average particle size of 10 mm and a particle size range of 4 to 19 mm (crushing step). Next, the granular sponge titanium is filled in a container equipped with an ultrasonic transmission device (UE-1200Z26S-4A type, maximum output 1.2 KW; manufactured by Ultrasonic Industry Co., Ltd.), and 0.6N nitric acid aqueous solution is sponge-filled therein. Titanium was filled until it was immersed, and treatment was performed by ultrasonic vibration for 180 minutes (acid treatment step). Thereafter, the sponge titanium was sufficiently washed with pure water, heated at 300 ° C. for 10 hours, and dried to obtain a final product. The content of the impurity components, Ni, Fe and oxygen in the obtained final product was measured. Table 1 shows the results.
[0027]
Example 2
A high-purity titanium sponge, which is the final product obtained in Example 1, was filled in a reduction reaction vessel. Thereafter, the inside of the reduction reaction vessel was replaced with argon gas, and then heated to 400 ° C. under a reduced pressure of 1.3 × 10 −1 Pa, and after 50 hours, argon gas was charged again. Thereafter, the inside of the reduction reaction vessel and the inside of the cooling condenser were evacuated to a degree of vacuum of 1.3 × 10 −1 Pa, and the temperature was raised to 700 ° C. for 2 hours, 800 ° C. for 2 hours, 900 ° C. for 2 hours, and finally to 1000 ° C. It was heated and subjected to a heat treatment under reduced pressure for 40 hours (drying step). After the drying step, the mixture was cooled to room temperature, and the titanium sponge in the container was extracted and disintegrated to obtain a final product of titanium sponge. The content of the impurity components, Ni, Fe and oxygen in the obtained final product was measured. Table 1 shows the results.
[0028]
Example 3
Instead of the acid treatment step described in Example 1, a granular sponge titanium was filled in a container equipped with an ultrasonic transmission device, and a 0.6N nitric acid aqueous solution was filled into the container until the sponge titanium was immersed in the container. The inside was degassed at a reduced pressure of 1 Pa and degassed for 3 hours, and thereafter, an acid treatment step of performing treatment by ultrasonic vibration for 180 minutes while maintaining the reduced pressure was performed in the same manner as in Example 1. Done. The content of the impurity components, Ni, Fe and oxygen in the obtained final product was measured. Table 1 shows the results.
[0029]
Example 4
Granular sponge titanium was obtained in the same manner as in Example 1, except that no ultrasonic vibration was applied. That is, in the acid treatment method of Example 4, the granular sponge titanium was immersed in 0.6 N nitric acid aqueous solution for 180 minutes. The content of the impurity components, Ni, Fe and oxygen in the obtained final product was measured. Table 1 shows the results.
[0030]
Comparative Example 1
A granular sponge titanium was obtained in the same manner as in Example 1 except that the treatment after the acid treatment step was not performed. The content of the impurity components, Ni, Fe and oxygen in the obtained final product was measured. Table 1 shows the results.
[0031]
[Table 1]
Figure 2004169139
[0032]
【The invention's effect】
As described above, in the present invention, in the method for producing massive titanium sponge by the Kroll method of reducing titanium tetrachloride and metallic magnesium, the massive titanium sponge was crushed and adjusted to granules having an average particle diameter of 2 to 50 mm. After that, by treating with an acid, impurities can be efficiently removed, and as a result, extremely high-purity titanium with little impurities such as nickel can be efficiently produced, which is useful as a material for a sputtering target.

Claims (8)

四塩化チタンを金属マグネシウムで還元して塊状スポンジチタンを生成させる塊状スポンジチタン生成工程と、該塊状スポンジチタンを解砕して平均粒径2〜50mmの顆粒状スポンジチタンに調整する解砕工程と、該顆粒状スポンジチタンを酸で処理する酸処理工程を有することを特徴とする高純度チタンの製造方法。A massive titanium sponge generating step of reducing titanium tetrachloride with metallic magnesium to produce a massive titanium sponge; A method for producing high-purity titanium, comprising an acid treatment step of treating the granular sponge titanium with an acid. 前記酸処理工程が、酸水溶液に該顆粒状スポンジチタンを浸漬させ、超音波振動することからなることを特徴とする請求項1に記載の高純度チタンの製造方法。The method for producing high-purity titanium according to claim 1, wherein the acid treatment step comprises immersing the granular sponge titanium in an aqueous acid solution and subjecting the granular sponge titanium to ultrasonic vibration. 前記酸処理工程が、酸水溶液に該顆粒状スポンジチタンを浸漬させ、これを減圧処理することを特徴とする請求項1に記載の高純度チタンの製造方法。The method for producing high-purity titanium according to claim 1, wherein in the acid treatment step, the granular titanium sponge is immersed in an aqueous acid solution, and the resultant is subjected to a reduced pressure treatment. 前記酸処理工程が、酸水溶液に該顆粒状スポンジチタンを浸漬させ、これを減圧処理下で超音波振動するか、または減圧処理した後、超音波振動することを特徴とする請求項1に記載の高純度チタンの製造方法。2. The acid treatment step according to claim 1, wherein the granular titanium sponge is immersed in an aqueous acid solution and subjected to ultrasonic vibration under reduced pressure treatment, or subjected to reduced pressure treatment and then subjected to ultrasonic vibration. Production method of high purity titanium. 前記酸処理工程が、減圧下で該顆粒状スポンジチタンに酸水溶液または酸の蒸気を供給することからなることを特徴とする請求項1記載の高純度チタンの製造方法。The method for producing high-purity titanium according to claim 1, wherein the acid treatment step comprises supplying an aqueous acid solution or an acid vapor to the granular sponge titanium under reduced pressure. 前記酸処理工程で使用する酸が硝酸であることを特徴とする請求項1記載の高純度チタンの製造方法。The method for producing high-purity titanium according to claim 1, wherein the acid used in the acid treatment step is nitric acid. 前記酸処理工程を経た顆粒状スポンジチタンを、減圧下で加熱処理する乾燥工程を更に有することを特徴とする請求項1記載の高純度チタンの製造方法。The method for producing high-purity titanium according to claim 1, further comprising a drying step of heat-treating the granular titanium sponge having undergone the acid treatment step under reduced pressure. 前記酸処理工程または前記乾燥工程を経た顆粒状スポンジチタンを、真空アーク溶解または電子ビーム溶解により溶解させる溶解工程を更に有することを特徴とする請求項1〜7のいずれか1項記載の高純度チタンの製造方法。The high purity according to any one of claims 1 to 7, further comprising a dissolving step of dissolving the granular sponge titanium after the acid treatment step or the drying step by vacuum arc melting or electron beam melting. Manufacturing method of titanium.
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