JP2004168555A5 - - Google Patents

Download PDF

Info

Publication number
JP2004168555A5
JP2004168555A5 JP2002332781A JP2002332781A JP2004168555A5 JP 2004168555 A5 JP2004168555 A5 JP 2004168555A5 JP 2002332781 A JP2002332781 A JP 2002332781A JP 2002332781 A JP2002332781 A JP 2002332781A JP 2004168555 A5 JP2004168555 A5 JP 2004168555A5
Authority
JP
Japan
Prior art keywords
high pressure
pages
symposium
proceedings
japan
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2002332781A
Other languages
English (en)
Japanese (ja)
Other versions
JP3855029B2 (ja
JP2004168555A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2002332781A priority Critical patent/JP3855029B2/ja
Priority claimed from JP2002332781A external-priority patent/JP3855029B2/ja
Publication of JP2004168555A publication Critical patent/JP2004168555A/ja
Publication of JP2004168555A5 publication Critical patent/JP2004168555A5/ja
Application granted granted Critical
Publication of JP3855029B2 publication Critical patent/JP3855029B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP2002332781A 2002-11-15 2002-11-15 透光性超微粒ダイヤモンド焼結体の製造法 Expired - Lifetime JP3855029B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002332781A JP3855029B2 (ja) 2002-11-15 2002-11-15 透光性超微粒ダイヤモンド焼結体の製造法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002332781A JP3855029B2 (ja) 2002-11-15 2002-11-15 透光性超微粒ダイヤモンド焼結体の製造法

Publications (3)

Publication Number Publication Date
JP2004168555A JP2004168555A (ja) 2004-06-17
JP2004168555A5 true JP2004168555A5 (enExample) 2006-03-02
JP3855029B2 JP3855029B2 (ja) 2006-12-06

Family

ID=32697704

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002332781A Expired - Lifetime JP3855029B2 (ja) 2002-11-15 2002-11-15 透光性超微粒ダイヤモンド焼結体の製造法

Country Status (1)

Country Link
JP (1) JP3855029B2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9103172B1 (en) * 2005-08-24 2015-08-11 Us Synthetic Corporation Polycrystalline diamond compact including a pre-sintered polycrystalline diamond table including a nonmetallic catalyst that limits infiltration of a metallic-catalyst infiltrant therein and applications therefor
EP2239228B1 (en) 2008-02-06 2020-06-24 Sumitomo Electric Industries, Ltd. Polycrystalline diamond
JP5500508B2 (ja) * 2010-03-31 2014-05-21 三菱マテリアル株式会社 微粒多結晶ダイヤモンド焼結体の製造法
GB201311849D0 (en) * 2013-07-02 2013-08-14 Element Six Ltd Super-hard constructions and methods for making and processing same
CN106588018B (zh) * 2016-11-15 2019-05-07 上海交通大学 一种超高温碳化铪陶瓷纳米粉体的制备方法

Similar Documents

Publication Publication Date Title
JP2004168554A5 (enExample)
JP2004196595A5 (enExample)
Masri Silicon carbide and silicon carbide-based structures: The physics of epitaxy
CA2532773A1 (en) Novel cutting structures
DK1027189T3 (da) Lav-temperaturbinding til slibeværktøjer
AU2002354485A8 (en) Phosphor single crystal substrate and method for preparing the same, and nitride semiconductor component using the same
AU2003289013A1 (en) Silicon carbide based porous material and method for preparation thereof, and honeycomb structure
BR0314058A (pt) Composições para cuidados pessoais a base de álcool ramificado
TW200617151A (en) Polishing composition and polishing method using the same
JP2004168555A5 (enExample)
EP0921214A4 (en) MONOCRYSTALLINE SILICON CARBIDE AND PREPARATION METHOD THEREOF
EP1489188A4 (en) REACTION SOLUTION FOR CELL-FREE PROTEIN SYNTHESIS, METHOD FOR THE MANUFACTURE THEREOF AND PROTEIN SYNTHESIS PROCESS USING THEREOF
EP1502972A4 (en) SINGLE CRYSTAL SILICON PLATE AND EPITAXIAL PLATE, AND METHOD FOR PRODUCING A SINGLE SILICON CRYSTAL
JP2004168558A5 (enExample)
DK1444179T3 (da) Opslæmningscarbonhydridsyntese med væskehydroisomerisering i syntesereaktion
DK0871587T3 (da) Carbonnitrider med lav kompressibilitet
ATE205594T1 (de) Anordnung zur formschlüssigen aufnahme eines massstabs
AU2003209712A1 (en) Group iii nitride semiconductor crystal, production method thereof and group iii nitride semiconductor epitaxial wafer
DE59809935D1 (de) Versorgungssystem für chemikalien und dessen verwendung
MY141478A (en) Heat sensitive recording material
PL363944A1 (en) Silicon organic compound containing alkynol groups, material being subject to crosslinking and the form obtained through material crosslinking
EP1140161A4 (en) SYNTHETIC VIRUS-LIKE PARTICLES WITH HETEROLOGICAL EPITOPES.
ZA200505779B (en) Novel method for synthesising (2S,3AS,7AS)-perhydroin-dole-2-carboxylic acid and the sters thereof and the use thereof for perindopril synthesis
AU2003254919A1 (en) Plate-type silicon, method of producing the plate-type silicon, solar battery, and base plate for producing the plate-type silicon
Kim et al. Synthesis of 6, 7-dichloro-5, 8-phthalazinedione and its derivatives