JP2004165613A - 電子デバイスの製造 - Google Patents
電子デバイスの製造 Download PDFInfo
- Publication number
- JP2004165613A JP2004165613A JP2003157876A JP2003157876A JP2004165613A JP 2004165613 A JP2004165613 A JP 2004165613A JP 2003157876 A JP2003157876 A JP 2003157876A JP 2003157876 A JP2003157876 A JP 2003157876A JP 2004165613 A JP2004165613 A JP 2004165613A
- Authority
- JP
- Japan
- Prior art keywords
- cap layer
- dielectric
- organic polysilica
- layer
- coating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/69—Inorganic materials
- H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
- H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
- H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/14—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6326—Deposition processes
- H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
- H10P14/665—Porous materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
- H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
- H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
- H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H10P14/6686—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/249921—Web or sheet containing structurally defined element or component
- Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
- Y10T428/249987—With nonvoid component of specified composition
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Formation Of Insulating Films (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US38536902P | 2002-06-03 | 2002-06-03 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2004165613A true JP2004165613A (ja) | 2004-06-10 |
| JP2004165613A5 JP2004165613A5 (https=) | 2006-07-06 |
Family
ID=29550196
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003157876A Withdrawn JP2004165613A (ja) | 2002-06-03 | 2003-06-03 | 電子デバイスの製造 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US7018678B2 (https=) |
| EP (1) | EP1369908A2 (https=) |
| JP (1) | JP2004165613A (https=) |
| KR (1) | KR20030094099A (https=) |
| CN (1) | CN1510723A (https=) |
| TW (1) | TW200401816A (https=) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016021648A1 (ja) * | 2014-08-08 | 2016-02-11 | 三井化学株式会社 | シール組成物、及び半導体装置の製造方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4659329B2 (ja) * | 2000-06-26 | 2011-03-30 | ルネサスエレクトロニクス株式会社 | 半導体装置及びその製造方法 |
| JP2004161876A (ja) * | 2002-11-13 | 2004-06-10 | Shin Etsu Chem Co Ltd | 多孔質膜形成用組成物、多孔質膜とその製造方法、層間絶縁膜及び半導体装置 |
| KR20050084283A (ko) * | 2002-12-02 | 2005-08-26 | 토쿄오오카코교 가부시기가이샤 | 래더형 실리콘 공중합체 |
| KR101112482B1 (ko) * | 2003-03-03 | 2012-02-24 | 롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨. | Si-폴리머 및 이를 포함하는 포토레지스트 |
| JP2005133060A (ja) * | 2003-10-29 | 2005-05-26 | Rohm & Haas Electronic Materials Llc | 多孔性材料 |
| US20050196974A1 (en) * | 2004-03-02 | 2005-09-08 | Weigel Scott J. | Compositions for preparing low dielectric materials containing solvents |
| US20050196535A1 (en) * | 2004-03-02 | 2005-09-08 | Weigel Scott J. | Solvents and methods using same for removing silicon-containing residues from a substrate |
| US20080171140A1 (en) * | 2004-03-03 | 2008-07-17 | Gerhard Hirmer | Thin Film Ferroelectric Composites and Method of Making and Using the Same |
| JP4379596B2 (ja) * | 2004-06-10 | 2009-12-09 | 信越化学工業株式会社 | 犠牲膜形成用組成物、パターン形成方法、犠牲膜及びその除去方法 |
| US20060128163A1 (en) * | 2004-12-14 | 2006-06-15 | International Business Machines Corporation | Surface treatment of post-rie-damaged p-osg and other damaged materials |
| US8084765B2 (en) * | 2007-05-07 | 2011-12-27 | Xerox Corporation | Electronic device having a dielectric layer |
| KR101563914B1 (ko) * | 2009-03-04 | 2015-10-28 | 제록스 코포레이션 | 구조화 유기 필름 |
| US9567425B2 (en) | 2010-06-15 | 2017-02-14 | Xerox Corporation | Periodic structured organic films |
| US8257889B2 (en) | 2010-07-28 | 2012-09-04 | Xerox Corporation | Imaging members comprising capped structured organic film compositions |
| US8697322B2 (en) | 2010-07-28 | 2014-04-15 | Xerox Corporation | Imaging members comprising structured organic films |
| US8318892B2 (en) | 2010-07-28 | 2012-11-27 | Xerox Corporation | Capped structured organic film compositions |
| US8119314B1 (en) | 2010-08-12 | 2012-02-21 | Xerox Corporation | Imaging devices comprising structured organic films |
| US8119315B1 (en) | 2010-08-12 | 2012-02-21 | Xerox Corporation | Imaging members for ink-based digital printing comprising structured organic films |
| US8759473B2 (en) | 2011-03-08 | 2014-06-24 | Xerox Corporation | High mobility periodic structured organic films |
| US8353574B1 (en) | 2011-06-30 | 2013-01-15 | Xerox Corporation | Ink jet faceplate coatings comprising structured organic films |
| US8247142B1 (en) | 2011-06-30 | 2012-08-21 | Xerox Corporation | Fluorinated structured organic film compositions |
| US8410016B2 (en) | 2011-07-13 | 2013-04-02 | Xerox Corporation | Application of porous structured organic films for gas storage |
| US8377999B2 (en) | 2011-07-13 | 2013-02-19 | Xerox Corporation | Porous structured organic film compositions |
| US8313560B1 (en) | 2011-07-13 | 2012-11-20 | Xerox Corporation | Application of porous structured organic films for gas separation |
| US8460844B2 (en) | 2011-09-27 | 2013-06-11 | Xerox Corporation | Robust photoreceptor surface layer |
| US8372566B1 (en) | 2011-09-27 | 2013-02-12 | Xerox Corporation | Fluorinated structured organic film photoreceptor layers |
| KR20130042867A (ko) * | 2011-10-19 | 2013-04-29 | 삼성디스플레이 주식회사 | 보호막 용액 조성물, 박막 트랜지스터 표시판 및 박막 트랜지스터 표시판 제조 방법 |
| US8529997B2 (en) | 2012-01-17 | 2013-09-10 | Xerox Corporation | Methods for preparing structured organic film micro-features by inkjet printing |
| US8871425B2 (en) * | 2012-02-09 | 2014-10-28 | Az Electronic Materials (Luxembourg) S.A.R.L. | Low dielectric photoimageable compositions and electronic devices made therefrom |
| US9354748B2 (en) | 2012-02-13 | 2016-05-31 | Microsoft Technology Licensing, Llc | Optical stylus interaction |
| US9075566B2 (en) | 2012-03-02 | 2015-07-07 | Microsoft Technoogy Licensing, LLC | Flexible hinge spine |
| US9064654B2 (en) | 2012-03-02 | 2015-06-23 | Microsoft Technology Licensing, Llc | Method of manufacturing an input device |
| US9870066B2 (en) | 2012-03-02 | 2018-01-16 | Microsoft Technology Licensing, Llc | Method of manufacturing an input device |
| US9426905B2 (en) | 2012-03-02 | 2016-08-23 | Microsoft Technology Licensing, Llc | Connection device for computing devices |
| US9134807B2 (en) | 2012-03-02 | 2015-09-15 | Microsoft Technology Licensing, Llc | Pressure sensitive key normalization |
| US8873227B2 (en) | 2012-03-02 | 2014-10-28 | Microsoft Corporation | Flexible hinge support layer |
| USRE48963E1 (en) | 2012-03-02 | 2022-03-08 | Microsoft Technology Licensing, Llc | Connection device for computing devices |
| US8935774B2 (en) | 2012-03-02 | 2015-01-13 | Microsoft Corporation | Accessory device authentication |
| US20130300590A1 (en) | 2012-05-14 | 2013-11-14 | Paul Henry Dietz | Audio Feedback |
| US8765340B2 (en) | 2012-08-10 | 2014-07-01 | Xerox Corporation | Fluorinated structured organic film photoreceptor layers containing fluorinated secondary components |
| US8964379B2 (en) | 2012-08-20 | 2015-02-24 | Microsoft Corporation | Switchable magnetic lock |
| US8795774B2 (en) * | 2012-09-23 | 2014-08-05 | Rohm And Haas Electronic Materials Llc | Hardmask |
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| US8906462B2 (en) | 2013-03-14 | 2014-12-09 | Xerox Corporation | Melt formulation process for preparing structured organic films |
| KR20150086158A (ko) * | 2014-01-17 | 2015-07-27 | 주식회사 엘지화학 | 배리어 필름 및 그 제조 방법 |
| US9759854B2 (en) | 2014-02-17 | 2017-09-12 | Microsoft Technology Licensing, Llc | Input device outer layer and backlighting |
| US10120420B2 (en) | 2014-03-21 | 2018-11-06 | Microsoft Technology Licensing, Llc | Lockable display and techniques enabling use of lockable displays |
| US10324733B2 (en) | 2014-07-30 | 2019-06-18 | Microsoft Technology Licensing, Llc | Shutdown notifications |
| US10643858B2 (en) | 2017-10-11 | 2020-05-05 | Samsung Electronics Co., Ltd. | Method of etching substrate |
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| JP3499032B2 (ja) * | 1995-02-02 | 2004-02-23 | ダウ コーニング アジア株式会社 | 放射線硬化性組成物、その硬化方法及びパターン形成方法 |
| US5895263A (en) * | 1996-12-19 | 1999-04-20 | International Business Machines Corporation | Process for manufacture of integrated circuit device |
| US6300465B1 (en) * | 1997-01-30 | 2001-10-09 | Jsr Corporation | Process for producing phenylene-containing polymer and film-forming material |
| FR2761629B1 (fr) * | 1997-04-07 | 1999-06-18 | Hoechst France | Nouveau procede de polissage mecano-chimique de couches de materiaux semi-conducteurs a base de polysilicium ou d'oxyde de silicium dope |
| US5883219A (en) * | 1997-05-29 | 1999-03-16 | International Business Machines Corporation | Integrated circuit device and process for its manufacture |
| US6177360B1 (en) * | 1997-11-06 | 2001-01-23 | International Business Machines Corporation | Process for manufacture of integrated circuit device |
| US6093636A (en) * | 1998-07-08 | 2000-07-25 | International Business Machines Corporation | Process for manufacture of integrated circuit device using a matrix comprising porous high temperature thermosets |
| US6303192B1 (en) * | 1998-07-22 | 2001-10-16 | Philips Semiconductor Inc. | Process to improve adhesion of PECVD cap layers in integrated circuits |
| US6126516A (en) * | 1999-05-10 | 2000-10-03 | United States Filter Corporation | Centrifugal blasting apparatus |
| US6329280B1 (en) * | 1999-05-13 | 2001-12-11 | International Business Machines Corporation | Interim oxidation of silsesquioxane dielectric for dual damascene process |
| US6225238B1 (en) * | 1999-06-07 | 2001-05-01 | Allied Signal Inc | Low dielectric constant polyorganosilicon coatings generated from polycarbosilanes |
| US6420441B1 (en) * | 1999-10-01 | 2002-07-16 | Shipley Company, L.L.C. | Porous materials |
| US6875687B1 (en) * | 1999-10-18 | 2005-04-05 | Applied Materials, Inc. | Capping layer for extreme low dielectric constant films |
| US6348736B1 (en) * | 1999-10-29 | 2002-02-19 | International Business Machines Corporation | In situ formation of protective layer on silsesquioxane dielectric for dual damascene process |
| TW572980B (en) * | 2000-01-12 | 2004-01-21 | Jsr Corp | Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing process |
| KR100677782B1 (ko) * | 2000-01-17 | 2007-02-05 | 제이에스알 가부시끼가이샤 | 절연막 형성용 재료의 제조 방법 |
| JP4195773B2 (ja) * | 2000-04-10 | 2008-12-10 | Jsr株式会社 | 層間絶縁膜形成用組成物、層間絶縁膜の形成方法およびシリカ系層間絶縁膜 |
| US6468589B2 (en) * | 2000-02-02 | 2002-10-22 | Jsr Corporation | Composition for film formation and insulating film |
| JP4368498B2 (ja) * | 2000-05-16 | 2009-11-18 | Necエレクトロニクス株式会社 | 半導体装置、半導体ウェーハおよびこれらの製造方法 |
| US6465368B2 (en) * | 2000-05-16 | 2002-10-15 | Jsr Corporation | Method of manufacturing insulating film-forming material, the insulating film-forming material, and insulating film |
| TW524883B (en) * | 2000-05-22 | 2003-03-21 | Jsr Corp | Composition for film formation, process for producing composition for film formation, method of film formation, and silica-based film |
| US6271273B1 (en) * | 2000-07-14 | 2001-08-07 | Shipley Company, L.L.C. | Porous materials |
| EP1323189A2 (en) * | 2000-09-13 | 2003-07-02 | Shipley Company LLC | Electronic device manufacture |
| TW588072B (en) * | 2000-10-10 | 2004-05-21 | Shipley Co Llc | Antireflective porogens |
| US6380106B1 (en) * | 2000-11-27 | 2002-04-30 | Chartered Semiconductor Manufacturing Inc. | Method for fabricating an air gap metallization scheme that reduces inter-metal capacitance of interconnect structures |
| US6685983B2 (en) * | 2001-03-14 | 2004-02-03 | International Business Machines Corporation | Defect-free dielectric coatings and preparation thereof using polymeric nitrogenous porogens |
-
2003
- 2003-06-03 US US10/453,337 patent/US7018678B2/en not_active Expired - Fee Related
- 2003-06-03 CN CNA031649491A patent/CN1510723A/zh active Pending
- 2003-06-03 KR KR10-2003-0035664A patent/KR20030094099A/ko not_active Withdrawn
- 2003-06-03 JP JP2003157876A patent/JP2004165613A/ja not_active Withdrawn
- 2003-06-03 EP EP03253482A patent/EP1369908A2/en not_active Withdrawn
- 2003-06-03 TW TW92114993A patent/TW200401816A/zh unknown
-
2006
- 2006-03-23 US US11/387,425 patent/US20060204742A1/en not_active Abandoned
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016021648A1 (ja) * | 2014-08-08 | 2016-02-11 | 三井化学株式会社 | シール組成物、及び半導体装置の製造方法 |
| JPWO2016021648A1 (ja) * | 2014-08-08 | 2017-04-27 | 三井化学株式会社 | シール組成物、及び半導体装置の製造方法 |
| US10580639B2 (en) | 2014-08-08 | 2020-03-03 | Mitsui Chemicals, Inc. | Sealing composition and method of manufacturing semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20030094099A (ko) | 2003-12-11 |
| US20040033700A1 (en) | 2004-02-19 |
| TW200401816A (en) | 2004-02-01 |
| US20060204742A1 (en) | 2006-09-14 |
| EP1369908A2 (en) | 2003-12-10 |
| US7018678B2 (en) | 2006-03-28 |
| CN1510723A (zh) | 2004-07-07 |
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