JP2004157527A5 - - Google Patents
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- JP2004157527A5 JP2004157527A5 JP2003352342A JP2003352342A JP2004157527A5 JP 2004157527 A5 JP2004157527 A5 JP 2004157527A5 JP 2003352342 A JP2003352342 A JP 2003352342A JP 2003352342 A JP2003352342 A JP 2003352342A JP 2004157527 A5 JP2004157527 A5 JP 2004157527A5
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- thin film
- flexible thin
- displacement gradient
- conductive electrode
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Claims (5)
- 反射面と導電性電極とを備え、枠部材に周囲を支持された可撓性薄膜の前記導電性電極と、これに対向する複数の分割電極間に、静電気力を作用させて前記反射面の形状を変化させる可変形状反射鏡において、
前記複数の分割電極は、この複数の分割電極が形成された下部基板上の領域の中央部を中心とする円周方向に分割されているとともに、半径方向にも分割されており、 その外周部における円周方向の分割数が中央部における円周方向の分割数よりも多いことを特徴とする可変形状反射鏡。 - 前記可撓性薄膜の外周部近傍に、可撓性薄膜の他の領域よりも剛性の低い部位を設けたことを特徴とする請求項１に記載の可変形状反射鏡。
- 前記剛性の低い部位は、前記可撓性薄膜、前記反射面、又は前記導電性電極の少なくとも一つに離散的に設けられた開口であることを特徴とする請求項２に記載の可変形状反射鏡。
- 前記可撓性薄膜は、変形時における外周部近傍での、平坦時の前記反射面に対する鉛直方向の変位勾配が部位によって異なっており、
変位勾配が大きい部位における前記剛性の低い部位の占める割合が、変位勾配が小さい部位における前記剛性の低い部位の占める割合よりも大きいことを特徴とする請求項２に記載の可変形状反射鏡。 - 前記可撓性薄膜は、変形時における外周部近傍での、平坦時の前記反射面に対する鉛直方向の変位勾配が部位によって異なっており、
変位勾配が大きい部位における前記開口の占める割合が、変位勾配が小さい部位における前記開口の占める割合よりも大きいことを特徴とする請求項３に記載の可変形状反射鏡。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003352342A JP4347654B2 (ja) | 2002-10-16 | 2003-10-10 | 可変形状反射鏡及びその製造方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002301995 | 2002-10-16 | ||
| JP2003352342A JP4347654B2 (ja) | 2002-10-16 | 2003-10-10 | 可変形状反射鏡及びその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004157527A JP2004157527A (ja) | 2004-06-03 |
| JP2004157527A5 true JP2004157527A5 (ja) | 2006-10-26 |
| JP4347654B2 JP4347654B2 (ja) | 2009-10-21 |
Family
ID=32827931
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003352342A Expired - Fee Related JP4347654B2 (ja) | 2002-10-16 | 2003-10-10 | 可変形状反射鏡及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4347654B2 (ja) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7684104B2 (en) | 2004-09-27 | 2010-03-23 | Idc, Llc | MEMS using filler material and method |
| US7711239B2 (en) | 2006-04-19 | 2010-05-04 | Qualcomm Mems Technologies, Inc. | Microelectromechanical device and method utilizing nanoparticles |
| US7719752B2 (en) | 2007-05-11 | 2010-05-18 | Qualcomm Mems Technologies, Inc. | MEMS structures, methods of fabricating MEMS components on separate substrates and assembly of same |
| US8068268B2 (en) | 2007-07-03 | 2011-11-29 | Qualcomm Mems Technologies, Inc. | MEMS devices having improved uniformity and methods for making them |
Families Citing this family (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999052006A2 (en) | 1998-04-08 | 1999-10-14 | Etalon, Inc. | Interferometric modulation of radiation |
| US8928967B2 (en) | 1998-04-08 | 2015-01-06 | Qualcomm Mems Technologies, Inc. | Method and device for modulating light |
| WO2003007049A1 (en) | 1999-10-05 | 2003-01-23 | Iridigm Display Corporation | Photonic mems and structures |
| JP2006023684A (ja) * | 2004-07-09 | 2006-01-26 | Topcon Corp | 可変形状ミラー、眼底観察装置 |
| JP4602722B2 (ja) * | 2004-09-10 | 2010-12-22 | オリンパス株式会社 | 可変形状鏡 |
| US7372613B2 (en) | 2004-09-27 | 2008-05-13 | Idc, Llc | Method and device for multistate interferometric light modulation |
| US7944599B2 (en) | 2004-09-27 | 2011-05-17 | Qualcomm Mems Technologies, Inc. | Electromechanical device with optical function separated from mechanical and electrical function |
| US7893919B2 (en) | 2004-09-27 | 2011-02-22 | Qualcomm Mems Technologies, Inc. | Display region architectures |
| US7420725B2 (en) | 2004-09-27 | 2008-09-02 | Idc, Llc | Device having a conductive light absorbing mask and method for fabricating same |
| US7936497B2 (en) | 2004-09-27 | 2011-05-03 | Qualcomm Mems Technologies, Inc. | MEMS device having deformable membrane characterized by mechanical persistence |
| US7289259B2 (en) | 2004-09-27 | 2007-10-30 | Idc, Llc | Conductive bus structure for interferometric modulator array |
| US7369296B2 (en) | 2004-09-27 | 2008-05-06 | Idc, Llc | Device and method for modifying actuation voltage thresholds of a deformable membrane in an interferometric modulator |
| US7719500B2 (en) | 2004-09-27 | 2010-05-18 | Qualcomm Mems Technologies, Inc. | Reflective display pixels arranged in non-rectangular arrays |
| US7417783B2 (en) | 2004-09-27 | 2008-08-26 | Idc, Llc | Mirror and mirror layer for optical modulator and method |
| US8008736B2 (en) | 2004-09-27 | 2011-08-30 | Qualcomm Mems Technologies, Inc. | Analog interferometric modulator device |
| US7630114B2 (en) | 2005-10-28 | 2009-12-08 | Idc, Llc | Diffusion barrier layer for MEMS devices |
| US7916980B2 (en) | 2006-01-13 | 2011-03-29 | Qualcomm Mems Technologies, Inc. | Interconnect structure for MEMS device |
| US7382515B2 (en) | 2006-01-18 | 2008-06-03 | Qualcomm Mems Technologies, Inc. | Silicon-rich silicon nitrides as etch stops in MEMS manufacture |
| US7649671B2 (en) | 2006-06-01 | 2010-01-19 | Qualcomm Mems Technologies, Inc. | Analog interferometric modulator device with electrostatic actuation and release |
| US7835061B2 (en) | 2006-06-28 | 2010-11-16 | Qualcomm Mems Technologies, Inc. | Support structures for free-standing electromechanical devices |
| US7527998B2 (en) | 2006-06-30 | 2009-05-05 | Qualcomm Mems Technologies, Inc. | Method of manufacturing MEMS devices providing air gap control |
| JP2008152016A (ja) | 2006-12-18 | 2008-07-03 | Toshiba Corp | 可変形状ミラー装置および眼底観察装置 |
| US7706042B2 (en) | 2006-12-20 | 2010-04-27 | Qualcomm Mems Technologies, Inc. | MEMS device and interconnects for same |
| JP2009042456A (ja) * | 2007-08-08 | 2009-02-26 | Toshiba Corp | 形状可変鏡装置およびこの形状可変鏡装置を用いた眼底観察装置 |
| US7863079B2 (en) | 2008-02-05 | 2011-01-04 | Qualcomm Mems Technologies, Inc. | Methods of reducing CD loss in a microelectromechanical device |
| US8963159B2 (en) | 2011-04-04 | 2015-02-24 | Qualcomm Mems Technologies, Inc. | Pixel via and methods of forming the same |
| US9134527B2 (en) | 2011-04-04 | 2015-09-15 | Qualcomm Mems Technologies, Inc. | Pixel via and methods of forming the same |
| US8659816B2 (en) | 2011-04-25 | 2014-02-25 | Qualcomm Mems Technologies, Inc. | Mechanical layer and methods of making the same |
| CN103576282B (zh) * | 2013-11-13 | 2016-01-20 | 苏州大学 | 一种静电拉伸薄膜反射镜的制备方法 |
-
2003
- 2003-10-10 JP JP2003352342A patent/JP4347654B2/ja not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7684104B2 (en) | 2004-09-27 | 2010-03-23 | Idc, Llc | MEMS using filler material and method |
| US7711239B2 (en) | 2006-04-19 | 2010-05-04 | Qualcomm Mems Technologies, Inc. | Microelectromechanical device and method utilizing nanoparticles |
| US7719752B2 (en) | 2007-05-11 | 2010-05-18 | Qualcomm Mems Technologies, Inc. | MEMS structures, methods of fabricating MEMS components on separate substrates and assembly of same |
| US8068268B2 (en) | 2007-07-03 | 2011-11-29 | Qualcomm Mems Technologies, Inc. | MEMS devices having improved uniformity and methods for making them |
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