JP2004154827A - Solder foil containing flux and joining method of semiconductor element using the same - Google Patents

Solder foil containing flux and joining method of semiconductor element using the same Download PDF

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Publication number
JP2004154827A
JP2004154827A JP2002323375A JP2002323375A JP2004154827A JP 2004154827 A JP2004154827 A JP 2004154827A JP 2002323375 A JP2002323375 A JP 2002323375A JP 2002323375 A JP2002323375 A JP 2002323375A JP 2004154827 A JP2004154827 A JP 2004154827A
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Japan
Prior art keywords
flux
solder
solder foil
foil
reflow
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Pending
Application number
JP2002323375A
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Japanese (ja)
Inventor
Yasuhisa Tanaka
靖久 田中
Hideki Okada
秀樹 岡田
Tomomasa Yoshida
朋正 吉田
Masahiro Sugiura
正洋 杉浦
Shigeo Mizutani
滋男 水谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Taiho Kogyo Co Ltd
Solder Coat Co Ltd
Toyota Motor Corp
Original Assignee
Taiho Kogyo Co Ltd
Solder Coat Co Ltd
Toyota Motor Corp
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Priority to JP2002323375A priority Critical patent/JP2004154827A/en
Publication of JP2004154827A publication Critical patent/JP2004154827A/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/831Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
    • H01L2224/83101Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member

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Abstract

<P>PROBLEM TO BE SOLVED: To provide a solder foil containing flux which reduces occurrence of voids that is easily caused when a flux having high activity is frequently used in a Pb free solder foil containing flux for reducing a hard-to-reduce Sn oxide. <P>SOLUTION: The flux 2 is extended or dispersed in the lateral direction at the ratio of 1-30 % in a cross-section area of the solder foil 1, thus exposure time of the flux to reflow temperature is reduced and activity of the flux is decreased or amount to be used is decreased. <P>COPYRIGHT: (C)2004,JPO

Description

【0001】
【発明が属する技術分野】
本発明は、パワーモジュールのチップ部品をシート状基板に直接接合するに適したはんだ及び半導体素子の接合方法に関するものである。
【0002】
【従来の技術】
先ず、Sn−Pb系はんだ箔の従来技術を挙げる。
特開昭63−61973号公報に開示された半導体チップの接合方法によると、例えばSn−Pbはんだ箔内にCu,Ni,Fe,Agなどの熱伝導性が優れ、かつはんだとの親和性に優れた金属粒子を包含させることにより、破壊耐量や最大電流値の増大を図ることが提案されている。
特開平10−270612号公報に開示された放熱板接合用基板によると、三層構造の放熱板接合用基板と放熱板20の間をはんだ箔により接合している。このはんだ箔はPb−Snはんだであり、フラックスを含有していない。はんだ付けを行う加熱炉はH−N混合ガスが満たされたトンネルタイプのものである。
【0003】
次に、Pbフリーはんだ箔の従来技術を挙げる。
特開2001−35978号公報では、Sn−Zn系はんだは強いフラックスが必要があるので、弱いフラックスで十分なSn−Sb, Sn−Ag−Cu−In−Bi系はんだ箔を使用して不活性窒素雰囲気中ではんだ付けを行っている。
【0004】
続いて、種類を限定していない一般的はんだ箔の従来技術を挙げる。
特開2001−35978号公報は、フラックス入りクリームはんだとノンフラックスはんだ箔を上下に積層し,はんだ接合部のボイドを少なくすることを開示している。すなわち、フラックス入りクリームはんだだけではなく、ノンフラックスはんだ箔も使用しているので、ボイドが少なくなると説明されている。
【0005】
以上の従来技術から分かるように、Pb−Sn系はんだはフラックスを使用しない場合はリフローは還元性雰囲気で行うことが必要である。PbフリーのSn系はんだは、Snの酸化物が難還元性であるために、不活性雰囲気中でリフローを行なう場合はフラックスを使用することが必要である。
【0006】
【発明が解決しようとする課題】
上述のように難還元性Sn酸化物を還元するためには活性度が高いフラックスを多量に使用することが好ましいが、活性度が高いフラックスを多量に使用することはボイドを発生し易くする。
本発明者らは、フラックスの使用方式について従来の塗布方式と対比して、種々の方式についてボイド発生状況の実験し、前掲特開2001−35978号公報の方法もPbフリーSn系はんだに適用して追試したが、フラックス塗布方法よりも、ボイドを効果的に少なくすることができなかった。
【0007】
【課題を解決するための手段】
本発明者らは鋭意検討した結果、フラックス入りPbフリーはんだ箔が、パワーモジュールのチップ部品をはんだ付けするに際してボイドを少なくできることを見出した。同様に、フラックス入りはんだは従来のPb−Sn系はんだとして具体化しても同様にパワーモジュールのチップ部品のはんだ付けに際してボイドを少なくすることができる。
したがって、本発明は、はんだ合金を箔状に成形したはんだ箔において、箔の断面積比率で1〜30%のフラックスを、横方向に延在もしくは分散していることを特徴とするフラックス入りはんだ箔を提供するものである。
以下、本発明を詳しく説明する。
【0008】
本発明において、Pb フリーSn系はんだは、Sn−Ag系, Sn−Ag−Cu系, Sn−Ag−Bi系, Sn−Zn系, Sn−Cu系などの各種はんだ合金である。これらの組成例については、「鉛フリーはんだ実装の基礎と技術」2001金属学会セミナーテキスト、第43〜46頁(「国内外における鉛フリーはんだ標準化の動向」などに紹介されている。
【0009】
はんだ箔は、一般に厚さが0.01mm〜2mmであり、好ましくは0.05mm〜0.5mmであり、幅はチップ部品の幅により決定されるが、一般には5mm〜400mmの範囲である。
【0010】
フラックスは、リフロー時に加熱されるとはんだ合金の接合表面に流動して酸化膜を取り除くものである。フラックスとしては、ロジン類等の基剤、活性剤、溶剤などの添加剤が主な成分である。クリームはんだに使用されるフラックスに較らべ、溶剤の量は極端に低く、常温では固形または固形に近いものが好ましい。
【0011】
本発明に係るはんだ箔は、やに入りはんだ線を素材として圧延することにより製造することができる。図1に圧延後のフラックス入はんだ箔の概略図を示す。
図1に示された本発明に係る箔の模式図において、箔の圧延方向(L)に直交する断面1aの面積に対して、フラックス2の面積比率で1%未満であると活性力が不足してはんだ付性を損なう。一方30%を超えるとボイドが発生しやすい。フラックス面積比率は好ましくは2〜20%である。さらにフラックスの幅(d)は箔の幅(D)に対してd/D(%)=10〜80%が好ましく、より好ましくは20〜70%である。
【0012】
【作用】
一般に、PbフリーSn系はんだはPb−Sn系はんだに比べてリフロー温度が高いために、フラックスの成分であるロジンや活性剤に含まれる有機カルボン酸などが劣化して活性力を失い易い。
本発明によりフラックスを箔内に充填すると、リフローの際に生成する温度勾配は箔の外側で高く内側で低いから、フラックスがリフロー温度にさらされる時間が少なくなる。これに比較して塗布されたフラックスやクリームはんだ内のフラックスはリフロー温度にさらされる比較的に時間が長くなる。
また、はんだ箔内に板状に充填されたフラックスが接合面全体に流動・移動する距離と、平面配列されたフラックス入り糸はんだのフラックスが接合面全体に流動・移動する距離とを比較すると、後者の方が前者より横広がりする分だけ距離が長くなる。距離が長い分だけリフロー温度長時間さらされることになり、ロジンや活性剤に含まれる有機カルボン酸などの劣化が起こり易い。
したがって、本発明法は、フラックスの劣化を抑えることができ、その結果同じフラックス量でも活性力が高くなるので、リフローを還元性雰囲気中行なう必要がなくなり、あるいは同じ活性力を達成するためのフラックス量が少なくなるから、ボイドの発生を少なくすることができる。
【0013】
本発明のはんだ箔をPb−Sn系はんだに使用した場合は上記の効果は顕著ではないが、やはりボイドの発生を少なくすることができる。従来のPb−Sn系はんだはリフロー時に水素還元するために、表面の酸化膜厚さを10nm以下にする厳密な管理が要請されていたが、本発明によると酸化膜厚さの管理精度が緩和される。
【0014】
パワーモジュールを基板に接合する際には図2に示すように、シート状基板5、はんだ箔1及びパワーモジュール4用チップ部品を積層してリフローを行なう。
【0015】
【実施例】
Sn−3.5%Ag系はんだを用いてはんだ付け実験を行った。
【0016】
【表1】

Figure 2004154827
【0017】
表1において使用された塗布フラックスの組成は、約7%ロジン、約0.2%活性剤、残部ポリエチレングリコールであった。No.1,2のはんだ箔は厚さが0.1mm、幅が7mmであった。No.2のはんだ箔におけるフラックス面積率は7%であった。No.1の塗布方法ではNo.2と同じ量のフラックスを基板に塗布した。
また、No.3の糸はんだは直径が0.3mmであり、フラックス面積率は15%であった。このフラックス入り糸はんだを20本平面整列した。
No.4のクリームはんだははんだ合金粒子の平均径が40μmであり、はんだ合金粒子とフラックスを重量比で90:10に混合した。
リフローは270℃、60秒、窒素雰囲気の条件で行った。
【0018】
上記条件でリフロー試験を10回行い、X線CTスキャンして、ボイド面積率を測定して平均値を求めた結果を表2に示す。
【0019】
【表2】
Figure 2004154827
【0020】
表2に示すように、本発明実施例のNo.2は、ボイド面積率が低い。
【0021】
【発明の効果】
以上説明したように、本発明に係るはんだ箔は、特にPbフリーのSn系はんだについてボイドの発生を少なくすることができる(請求項1,2,3)。
さらに、リフローに際してフラックスの塗布を必要としないので、作業性が向上する(請求項4)。
さらにまた、水素を使用せずに窒素雰囲気でリフローをすることができるので、製造コストが低減する(請求項5)。
【図面の簡単な説明】
【図1】本発明に係るはんだ箔の模式図である。
【図2】パワーモジュールの接合法を図解する模式図である。
【符号の説明】
1 はんだ箔
2 フラックス
4 パワーモジュール用チップ部品
5 シート状基板[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a solder and semiconductor element joining method suitable for directly joining a chip component of a power module to a sheet-like substrate.
[0002]
[Prior art]
First, a conventional Sn-Pb-based solder foil will be described.
According to the bonding method of a semiconductor chip disclosed in Japanese Patent Application Laid-Open No. 63-61973, for example, the heat conductivity of Cu, Ni, Fe, Ag, etc. in Sn-Pb solder foil is excellent and the affinity with solder is improved. It has been proposed to increase the breakdown strength and the maximum current value by including excellent metal particles.
According to the heat sink joining substrate disclosed in Japanese Patent Application Laid-Open No. H10-270612, the heat sink 20 is joined between the heat sink 20 and the heat sink 20 having a three-layer structure. This solder foil is a Pb-Sn solder and contains no flux. The heating furnace for soldering is of a tunnel type filled with a mixed gas of H 2 -N 2 .
[0003]
Next, a conventional technique of a Pb-free solder foil will be described.
In Japanese Patent Application Laid-Open No. 2001-35978, since a Sn-Zn-based solder needs a strong flux, it is inactive by using a Sn-Sb, Sn-Ag-Cu-In-Bi-based solder foil sufficient with a weak flux. Soldering is performed in a nitrogen atmosphere.
[0004]
Next, a conventional technique of a general solder foil whose type is not limited will be described.
Japanese Patent Application Laid-Open No. 2001-35978 discloses that a flux-containing cream solder and a non-flux solder foil are vertically stacked to reduce voids in a solder joint. That is, it is described that voids are reduced because not only the flux-containing cream solder but also a non-flux solder foil is used.
[0005]
As can be seen from the above prior art, when the Pb-Sn solder does not use a flux, reflow must be performed in a reducing atmosphere. Pb-free Sn-based solder requires the use of a flux when reflow is performed in an inert atmosphere because Sn oxide is hardly reducible.
[0006]
[Problems to be solved by the invention]
As described above, in order to reduce the hardly reducible Sn oxide, it is preferable to use a large amount of the flux having high activity, but using a large amount of the flux having high activity tends to generate voids.
The present inventors conducted experiments on the generation of voids in various systems in comparison with the conventional coating system for the method of using the flux, and applied the method of JP 2001-35978 A to the Pb-free Sn-based solder. However, voids could not be reduced more effectively than the flux coating method.
[0007]
[Means for Solving the Problems]
As a result of intensive studies, the present inventors have found that a flux-containing Pb-free solder foil can reduce voids when soldering a chip component of a power module. Similarly, even when the flux-cored solder is embodied as a conventional Pb-Sn solder, voids can be similarly reduced when soldering chip components of the power module.
Therefore, the present invention provides a solder foil formed by molding a solder alloy into a foil shape, wherein a flux having a cross-sectional area ratio of 1 to 30% is extended or dispersed in a lateral direction in a flux-containing solder. Provide foil.
Hereinafter, the present invention will be described in detail.
[0008]
In the present invention, the Pb-free Sn-based solder is various solder alloys such as Sn-Ag-based, Sn-Ag-Cu-based, Sn-Ag-Bi-based, Sn-Zn-based, and Sn-Cu-based. Examples of these compositions are introduced in "Basics and Technology of Lead-Free Solder Mounting" 2001 Seminar Text of the Institute of Metals, pp. 43-46 ("Trends in Standardization of Lead-Free Solder in Japan and Overseas").
[0009]
The solder foil generally has a thickness of 0.01 mm to 2 mm, preferably 0.05 mm to 0.5 mm, and the width is determined by the width of the chip component, but generally ranges from 5 mm to 400 mm.
[0010]
The flux, when heated during reflow, flows to the joint surface of the solder alloy to remove the oxide film. The flux is mainly composed of a base such as rosin, an activator, and an additive such as a solvent. Compared with the flux used for the cream solder, the amount of the solvent is extremely low, and a solid or nearly solid at room temperature is preferable.
[0011]
The solder foil according to the present invention can be manufactured by rolling the solder wire as a raw material. FIG. 1 shows a schematic view of a flux-containing solder foil after rolling.
In the schematic diagram of the foil according to the present invention shown in FIG. 1, if the area ratio of the flux 2 is less than 1% with respect to the area of the cross section 1a perpendicular to the rolling direction (L) of the foil, the activation force is insufficient. And impair solderability. On the other hand, if it exceeds 30%, voids are likely to occur. The flux area ratio is preferably 2 to 20%. Further, the width (d) of the flux is preferably d / D (%) = 10 to 80%, more preferably 20 to 70%, with respect to the width (D) of the foil.
[0012]
[Action]
In general, since the Pb-free Sn-based solder has a higher reflow temperature than the Pb-Sn-based solder, rosin which is a component of the flux, organic carboxylic acid contained in the activator, and the like are likely to be deteriorated and lose active power.
Filling the foil with the flux according to the present invention reduces the time the flux is exposed to the reflow temperature because the temperature gradient generated during reflow is high outside and low inside the foil. In comparison, the applied flux and the flux in the cream solder are exposed to the reflow temperature for a relatively long time.
Also, comparing the distance that the flux filled in a plate shape in the solder foil flows and moves over the entire joining surface, and the distance that the flux of the flux-filled thread solder arranged in a plane flows and moves over the entire joining surface, The latter is longer than the former by the extent that it spreads laterally. The longer the distance, the longer the reflow temperature is exposed, the more likely it is that rosin and the organic carboxylic acid contained in the activator will deteriorate.
Therefore, according to the method of the present invention, the deterioration of the flux can be suppressed, and as a result, the activity becomes higher even with the same flux amount, so that it is not necessary to perform the reflow in a reducing atmosphere, or the flux for achieving the same activity is obtained. Since the amount is reduced, the generation of voids can be reduced.
[0013]
When the solder foil of the present invention is used for a Pb-Sn-based solder, the above effects are not remarkable, but the occurrence of voids can be reduced. The conventional Pb-Sn-based solder requires strict control to reduce the oxide film thickness on the surface to 10 nm or less in order to reduce hydrogen during reflow. However, according to the present invention, the control accuracy of the oxide film thickness is reduced. Is done.
[0014]
When the power module is bonded to the substrate, as shown in FIG. 2, the sheet-like substrate 5, the solder foil 1, and the chip component for the power module 4 are stacked and reflowed.
[0015]
【Example】
A soldering experiment was performed using Sn-3.5% Ag-based solder.
[0016]
[Table 1]
Figure 2004154827
[0017]
The composition of the coating flux used in Table 1 was about 7% rosin, about 0.2% activator, the balance polyethylene glycol. No. Solder foils 1 and 2 had a thickness of 0.1 mm and a width of 7 mm. No. The flux area ratio in the solder foil No. 2 was 7%. No. In the application method of No. 1, The same amount of flux as 2 was applied to the substrate.
No. The thread solder No. 3 had a diameter of 0.3 mm and a flux area ratio of 15%. Twenty flux-filled thread solders were aligned on a plane.
No. The cream solder of No. 4 had an average diameter of the solder alloy particles of 40 μm, and the solder alloy particles and the flux were mixed at a weight ratio of 90:10.
The reflow was performed at 270 ° C. for 60 seconds in a nitrogen atmosphere.
[0018]
The reflow test was performed 10 times under the above conditions, X-ray CT scanning was performed, the void area ratio was measured, and the average value was obtained. Table 2 shows the results.
[0019]
[Table 2]
Figure 2004154827
[0020]
As shown in Table 2, in the example of the present invention, No. 2 has a low void area ratio.
[0021]
【The invention's effect】
As described above, the solder foil according to the present invention can reduce the occurrence of voids particularly in Pb-free Sn-based solder (claims 1, 2, and 3).
Further, since no flux application is required during reflow, workability is improved (claim 4).
Furthermore, since reflow can be performed in a nitrogen atmosphere without using hydrogen, the manufacturing cost is reduced (claim 5).
[Brief description of the drawings]
FIG. 1 is a schematic view of a solder foil according to the present invention.
FIG. 2 is a schematic view illustrating a joining method of a power module.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Solder foil 2 Flux 4 Chip part for power modules 5 Sheet substrate

Claims (5)

はんだ合金を箔状に成形したはんだ箔において、箔の断面積比率で1〜30%のフラックスを、横方向に延在もしくは分散していることを特徴とするフラックス入りはんだ箔。A flux-containing solder foil, wherein a flux having a cross-sectional area ratio of 1 to 30% is extended or dispersed in a lateral direction in a solder foil obtained by forming a solder alloy into a foil shape. 前記はんだ合金がPbフリーSn系はんだ合金である請求項1記載のフラックス入りはんだ箔。The flux-containing solder foil according to claim 1, wherein the solder alloy is a Pb-free Sn-based solder alloy. パワーモジュールのチップ部品をシート状基板に接合するはんだ付けに使用される請求項1又は2記載のフラックス入りはんだ箔。The flux-containing solder foil according to claim 1, which is used for soldering for joining a chip component of a power module to a sheet-like substrate. 請求項1又は2記載のフラックス入りはんだ箔を、フラックスを塗布せずにシート状基板とパワーモジュールのチップ部品との間に積層して、リフローを行うことを特徴とする半導体素子の接合方法。A method of bonding a semiconductor element, comprising: laminating the flux-containing solder foil according to claim 1 between a sheet-like substrate and a chip component of a power module without applying a flux, and performing reflow. 前記リフローを窒素雰囲気中で行うことを特徴とする請求項4記載の半導体素子の接合方法。5. The method according to claim 4, wherein the reflow is performed in a nitrogen atmosphere.
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014526807A (en) * 2011-09-26 2014-10-06 アルファ・メタルズ・インコーポレイテッド System and method for void suppression in solder joints
WO2017073313A1 (en) * 2015-10-29 2017-05-04 株式会社村田製作所 Joining member and joining member joining method
JP2018176180A (en) * 2017-04-05 2018-11-15 三菱電機株式会社 Welding wire, brazing member and brazing method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014526807A (en) * 2011-09-26 2014-10-06 アルファ・メタルズ・インコーポレイテッド System and method for void suppression in solder joints
WO2017073313A1 (en) * 2015-10-29 2017-05-04 株式会社村田製作所 Joining member and joining member joining method
JP2018176180A (en) * 2017-04-05 2018-11-15 三菱電機株式会社 Welding wire, brazing member and brazing method

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