JP2004153260A5 - - Google Patents

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Publication number
JP2004153260A5
JP2004153260A5 JP2003350431A JP2003350431A JP2004153260A5 JP 2004153260 A5 JP2004153260 A5 JP 2004153260A5 JP 2003350431 A JP2003350431 A JP 2003350431A JP 2003350431 A JP2003350431 A JP 2003350431A JP 2004153260 A5 JP2004153260 A5 JP 2004153260A5
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JP
Japan
Prior art keywords
via hole
forming
semiconductor
pad electrode
columnar terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2003350431A
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English (en)
Japanese (ja)
Other versions
JP4511148B2 (ja
JP2004153260A (ja
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Publication date
Application filed filed Critical
Priority to JP2003350431A priority Critical patent/JP4511148B2/ja
Priority claimed from JP2003350431A external-priority patent/JP4511148B2/ja
Publication of JP2004153260A publication Critical patent/JP2004153260A/ja
Publication of JP2004153260A5 publication Critical patent/JP2004153260A5/ja
Application granted granted Critical
Publication of JP4511148B2 publication Critical patent/JP4511148B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2003350431A 2002-10-11 2003-10-09 半導体装置の製造方法 Expired - Fee Related JP4511148B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003350431A JP4511148B2 (ja) 2002-10-11 2003-10-09 半導体装置の製造方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2002298888 2002-10-11
JP2002298890 2002-10-11
JP2002298889 2002-10-11
JP2003350431A JP4511148B2 (ja) 2002-10-11 2003-10-09 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2004153260A JP2004153260A (ja) 2004-05-27
JP2004153260A5 true JP2004153260A5 (cg-RX-API-DMAC7.html) 2006-11-16
JP4511148B2 JP4511148B2 (ja) 2010-07-28

Family

ID=32475624

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003350431A Expired - Fee Related JP4511148B2 (ja) 2002-10-11 2003-10-09 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JP4511148B2 (cg-RX-API-DMAC7.html)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005235860A (ja) 2004-02-17 2005-09-02 Sanyo Electric Co Ltd 半導体装置及びその製造方法
JP4376715B2 (ja) * 2004-07-16 2009-12-02 三洋電機株式会社 半導体装置の製造方法
KR20060087273A (ko) 2005-01-28 2006-08-02 삼성전기주식회사 반도체 패키지및 그 제조방법
KR100616670B1 (ko) 2005-02-01 2006-08-28 삼성전기주식회사 웨이퍼 레벨의 이미지 센서 모듈 및 그 제조방법
JP5361156B2 (ja) * 2007-08-06 2013-12-04 ラピスセミコンダクタ株式会社 半導体装置及びその製造方法
JP5258735B2 (ja) * 2009-11-13 2013-08-07 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 半導体装置
US8384225B2 (en) * 2010-11-12 2013-02-26 Xilinx, Inc. Through silicon via with improved reliability
JP5876893B2 (ja) * 2014-04-02 2016-03-02 ラピスセミコンダクタ株式会社 半導体装置及びその製造方法
CN110931460B (zh) * 2019-12-30 2024-12-27 江阴长电先进封装有限公司 一种芯片的封装结构及其封装方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3713418B2 (ja) * 2000-05-30 2005-11-09 光正 小柳 ３次元画像処理装置の製造方法
JP2001351997A (ja) * 2000-06-09 2001-12-21 Canon Inc 受光センサーの実装構造体およびその使用方法
JP2002094082A (ja) * 2000-07-11 2002-03-29 Seiko Epson Corp 光素子及びその製造方法並びに電子機器

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