JP2004135163A - Method of manufacturing saw device - Google Patents

Method of manufacturing saw device Download PDF

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Publication number
JP2004135163A
JP2004135163A JP2002299259A JP2002299259A JP2004135163A JP 2004135163 A JP2004135163 A JP 2004135163A JP 2002299259 A JP2002299259 A JP 2002299259A JP 2002299259 A JP2002299259 A JP 2002299259A JP 2004135163 A JP2004135163 A JP 2004135163A
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Prior art keywords
metal layer
electrode
layer
pad
saw
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JP2002299259A
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Japanese (ja)
Inventor
Shinichi Hakamata
袴田　新一
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Oki Electric Industry Co Ltd
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Oki Electric Industry Co Ltd
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Priority to JP2002299259A priority Critical patent/JP2004135163A/en
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a SAW (Surface Acoustic Wave) device by which deposition of metal onto an insulating film and deformation of a pointing pad and a SAW electrode are hardly caused. <P>SOLUTION: An electrode metal layer consisting of at least two layers is formed on a piezoelectric substrate and its upper layer is made into a Cr or Ti layer. A pad metal layer is formed on the electrode metal layer, the pad metal layer is selectively removed and a bonding pad is formed. <P>COPYRIGHT: (C)2004,JPO

Description

【０００１】
【発明の属する技術分野】
この発明は、表面弾性波デバイス（以下ＳＡＷデバイス）の製造方法に関するものである。
【０００２】
【従来の技術】
従来のＳＡＷデバイスの製造方法について説明する。まず、圧電基板上に、ＳＡＷ電極と、ＳＡＷ電極の一部を露出させるようにＳＡＷ電極を覆う絶縁膜を形成する。そして、ＳＡＷ電極の露出している部分に、ボンディングパッドを形成する。このボンディングパッドの形成は、次のように行う。まず、ＳＡＷ電極の露出部周辺を開口したレジストを塗布し、さらにその上から金属膜を形成する。その後、リフトオフを行う。つまり、レジストを、その上に形成された金属膜と共に溶剤で洗い流す。すると、レジストの開口部に残存した金属膜が、ボンディングパッドになる。
【０００３】
また、従来のＳＡＷデバイスの製造方法として、リフトオフ法を使わない別の方法もある。これは、特開２００１−１６８６６７に記載されている方法である。この方法では、まず、圧電基板上に、ＳＡＷ電極と、ＳＡＷ電極の一部を露出させるようにＳＡＷ電極を覆う絶縁膜を形成する。ここまでは、リフトオフ法を使用する方法と同じである。
【０００４】
次に、ＳＡＷ電極の露出部も含めて、絶縁膜上に金属膜を形成する。そして、この金属膜をＳＡＷ電極の露出部を残して選択的にエッチング除去することによって、金属膜をボンディングパッドとする。
【０００５】
【発明が解決しようとする課題】
しかしながら、従来技術のうち前者の方法では、リフトオフ法を用いてボンディングパッドを形成しているため、ボンディングパッドの形状が安定しないという問題があった。また、金属膜は、レジスト層を洗い流すための溶剤に溶解しないので、リフトオフ時に金属膜の一部がボンディングパッドや絶縁膜に付着してしまう問題もあった。
【０００６】
一方、ＳＡＷ電極上の絶縁膜は、ＳＡＷフィルタの特性を維持するために、極めて薄く形成されている。そのため、従来技術のうち後者の方法では、金属膜をエッチング除去するとき、エッチング液がボンディングパッドと絶縁膜の境界から侵入して、絶縁膜下のＳＡＷ電極をエッチングしてしまう可能性がある。ＳＡＷ電極をエッチングされてしまうと、当然、ＳＡＷ電極の形状が変化するので、ＳＡＷ電極に設計どおりの特性を持たせることができない。
【０００７】
【課題を解決するための手段】
この課題を解決するために本発明では、２つの層のうち、上層がＣｒまたはＴｉからなる電極メタル層を、圧電基板上に形成し、その電極メタル層上に、パッドメタル層を形成し、そのパッドメタル層を選択的に除去し、さらに電極メタル層を選択的に除去し、残存したパッドメタル層及び残存した電極メタル層を覆うように絶縁膜を形成し、絶縁膜を選択的に除去して、パッドメタル層の一部を露出させる工程とを有する。
【０００８】
【発明の実施の形態】
図１は、本発明の実施例であるＳＡＷデバイスの製造方法を示す平面図及び断面図である。図１（Ａ）、（Ｃ）、（Ｅ）、（Ｇ）、（Ｉ）、（Ｋ）は平面図である。また、図１（Ｂ）、（Ｄ）、（Ｆ）、（Ｈ）、（Ｊ）、（Ｌ）は、それぞれ平面図である図１（Ａ）、（Ｃ）、（Ｅ）、（Ｇ）、（Ｉ）、（Ｋ）を点線ＸＹにて切断した場合の断面を示している。以下、図１を用いて、本発明の実施例を説明する。
【０００９】
まず、図１（Ａ）及び図１（Ｂ）に示すように、タンタル酸リチウム（以下ＬｉＴａＯ３）からなる圧電基板１１上に、厚さ４００ｎｍの電極メタル層１３Ａを、蒸着装置またはスパッタ装置を用いて形成する。この電極メタル層１３Ａは、図２に示すように３層からなり、上層１３ＡＡはＣｒまたはＴｉ　、中層１３ＡＢはアルミニウムと銅の合金（以下Ａｌ−Ｃｕ）、下層１３ＡＣはＣｒの層である。なお、上層１３ＡＡ及び下層１３ＡＣの厚さはそれぞれ１０ｎｍ　ほどであるため、電極メタル層１３Ａは、そのほとんどがＡｌ−Ｃｕから形成されることになる。
【００１０】
次に、図１（Ｃ）及び図１（Ｄ）に示すように、電極メタル層１３Ａ上に、Ａｕからなる厚さ９００ｎｍのパッドメタル層１２Ａを、蒸着装置またはスパッタ装置を用いて形成する。このとき、圧電基板１１を大気中に開放せず、電極メタル層１３Ａを形成した蒸着装置内またはスパッタ装置内において、パッドメタル層１２Ａを連続形成する。
【００１１】
続いて、図１（Ｅ）及び図１（Ｆ）に示すように、パッドメタル層１２Ａを、体積比がＫＩ：ＫＣｌ：Ｉ：Ｈ２Ｏ＝１０：５：１：４４となるエッチング液にてエッチングすることによって、パッドメタル層１２Ａを選択的にエッチング除去し、パッドメタル層１２Ａをボンディングパッド１２とする。この時、ＣｒまたはＴｉからなる電極メタル層１３Ａの上層１３ＡＡが、電極メタル層１３Ａをウエットエッチングから保護する。
【００１２】
さらに、図１（Ｇ）図１（Ｈ）に示すように、ホトリソ及びエッチング技術を用いて、電極メタル層１３Ａを選択的にエッチングすることによって、電極メタル層１３Ａを櫛型のＳＡＷ電極１３とする。このときのエッチングにはドライエッチング法を用い、そのエッチングガスとしてはＢＣｌ３とＣｌ２の混合ガスを用いる。この工程は、電極メタル層１３Ａの上層１３ＡＡ、中層１３ＡＢ、下層１３ＡＣを一度にエッチングできる。
【００１３】
なお、電極メタル層１３Ａのエッチングは、電極メタル層１３Ａ上に形成した図示しないレジストパターンをマスクとして行うが、このレジストパターンを形成するときに、現像液を用いる。レジストパターンは、電極メタル層１３Ａの表面に形成するため、レジストパターン形成時に、現像液が電極メタル層１３Ａに触れる。ＣｒまたはＴｉの層である電極メタル層１３Ａの上層１３ＡＡは、この現像液から電極メタル層１３Ａの特に中層１３ＡＢを保護する。また、電極メタル層１３Ａの上層１３ＡＡは、ＳＡＷデバイスの耐電力性を向上させる効果もある。
【００１４】
また、Ｃｒ層である電極メタル層１３Ａの下層１３ＡＣは、電極メタル層１３Ａのエッチングストッパとして働く。即ち、Ａｌ−Ｃｕ層である中層１３ＡＢよりも、Ｃｒ層である下層１３ＡＣはエッチングされにくいので、電極メタル層１３Ａのエッチングを進めていき、下層１３ＡＣが露出したら、エッチングのスピードを緩める。このようにすることで、電極メタル層１３Ａの下の圧電基板１１へのダメージを最小限にすることができる。
【００１５】
そして、図１（Ｉ）図１（Ｊ）に示すように、ＳＡＷ電極１３を保護するために酸化膜１４を、スパッタ装置を用いて全面に形成する。
【００１６】
最後に、図１（Ｋ）図１（Ｌ）に示すように、ホトリソ及びエッチング技術を用いて、ボンディングパッド１２の一部が露出されるように、酸化膜１４を開口する。
【００１７】
以上のように本発明の上記の実施例は、ＳＡＷ電極１３となる電極メタル層１３Ａの上層１３ＡＡが、ＣｒまたはＴｉの層となっている。したがって、パッドメタル層１２Ａをエッチングしてボンディングパッド１２とする時に、電極メタル層１３Ａを保護することができるので、ＳＡＷ電極１３をエッチングしてしまうことがない。そのため、ＳＡＷ電極１３の形状が変化してしまうこともない。ゆえに、より特性に優れたＳＡＷデバイスの提供が可能になる。また、ＳＡＷ電極１３となる電極メタル層１３Ａとボンディングパッド１２となるパッドメタル層１２Ａが連続形成されているため、ＳＡＷ電極１３とボンディングパッド１２の密着性が向上するという効果も期待できる。
【００１８】
【発明の効果】
以上説明したように本発明では、ボンディングパッドの形成にリフトオフ法を用いていないので、ボンディングパッドの形状が安定する。また、同様の理由により、パッドメタル層の一部がボンディングパッドや酸化膜に付着してしまうこともない。したがって、精密なボンディングパッドを形成することができる。さらに、ＳＡＷ電極を複数の層とし、特にＳＡＷ電極の上層をウェットエッチングに強いＣｒまたはＴｉの層にしたため、パッドメタル層をエッチングしてボンディングパッドを形成する時に、ＳＡＷ電極の形状が変化してしまうこともない。ゆえに、より特性に優れたＳＡＷデバイスの提供が可能になる。
【図面の簡単な説明】
【図１】第１の実施例におけるＳＡＷデバイスの製造方法を示す断面図及び平面図である。
【図２】第１の実施例における、電極メタル層の構造を示す断面図である。
【符号の説明】
１１　基板
１２　パッドメタル層
１２Ａ　ボンディングパッド
１３　電極メタル層
１３Ａ　ＳＡＷ電極
１４　酸化膜[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a method for manufacturing a surface acoustic wave device (hereinafter, SAW device).
[0002]
[Prior art]
A conventional SAW device manufacturing method will be described. First, a SAW electrode and an insulating film covering the SAW electrode are formed on the piezoelectric substrate so as to expose a part of the SAW electrode. Then, a bonding pad is formed on the exposed portion of the SAW electrode. This bonding pad is formed as follows. First, a resist having an opening around the exposed portion of the SAW electrode is applied, and a metal film is formed thereon. Thereafter, lift-off is performed. That is, the resist is washed away with the solvent together with the metal film formed thereon. Then, the metal film remaining in the opening of the resist becomes a bonding pad.
[0003]
Another conventional method for manufacturing a SAW device does not use a lift-off method. This is a method described in JP-A-2001-168667. In this method, first, a SAW electrode and an insulating film covering the SAW electrode are formed on the piezoelectric substrate so as to expose a part of the SAW electrode. Up to this point, the method is the same as the method using the lift-off method.
[0004]
Next, a metal film is formed on the insulating film including the exposed portion of the SAW electrode. Then, the metal film is selectively removed by etching while leaving the exposed portion of the SAW electrode, so that the metal film is used as a bonding pad.
[0005]
[Problems to be solved by the invention]
However, in the former method of the prior art, since the bonding pads are formed using the lift-off method, there is a problem that the shape of the bonding pads is not stable. In addition, since the metal film does not dissolve in the solvent for washing away the resist layer, there is a problem that a part of the metal film adheres to the bonding pad or the insulating film at the time of lift-off.
[0006]
On the other hand, the insulating film on the SAW electrode is formed extremely thin in order to maintain the characteristics of the SAW filter. Therefore, in the latter method of the prior art, when the metal film is removed by etching, there is a possibility that the etchant may enter the boundary between the bonding pad and the insulating film and etch the SAW electrode under the insulating film. If the SAW electrode is etched, the shape of the SAW electrode naturally changes, so that the SAW electrode cannot have the designed characteristics.
[0007]
[Means for Solving the Problems]
In order to solve this problem, in the present invention, an electrode metal layer whose upper layer is made of Cr or Ti is formed on a piezoelectric substrate, and a pad metal layer is formed on the electrode metal layer. The pad metal layer is selectively removed, the electrode metal layer is further selectively removed, an insulating film is formed so as to cover the remaining pad metal layer and the remaining electrode metal layer, and the insulating film is selectively removed. And exposing a part of the pad metal layer.
[0008]
BEST MODE FOR CARRYING OUT THE INVENTION
FIG. 1 is a plan view and a cross-sectional view illustrating a method for manufacturing a SAW device according to an embodiment of the present invention. 1A, 1C, 1E, 1G, 1I, and 1K are plan views. 1 (B), (D), (F), (H), (J) and (L) are plan views of FIGS. 1 (A), (C), (E) and (G), respectively. ), (I), and (K) are cut along a dotted line XY. Hereinafter, an embodiment of the present invention will be described with reference to FIG.
[0009]
First, as shown in FIGS. 1A and 1B, a 400 nm-thick electrode metal layer 13A is formed on a piezoelectric substrate 11 made of lithium tantalate (hereinafter, LiTaO 3 ) by using a vapor deposition apparatus or a sputtering apparatus. It is formed by using. As shown in FIG. 2, the electrode metal layer 13A is composed of three layers, the upper layer 13AA is Cr or Ti, the middle layer 13AB is an alloy of aluminum and copper (hereinafter Al-Cu), and the lower layer 13AC is a layer of Cr. Since the thickness of each of the upper layer 13AA and the lower layer 13AC is about 10 nm, most of the electrode metal layer 13A is formed of Al-Cu.
[0010]
Next, as shown in FIGS. 1C and 1D, a 900 nm-thick pad metal layer 12A made of Au is formed on the electrode metal layer 13A by using a vapor deposition apparatus or a sputtering apparatus. At this time, the pad metal layer 12A is continuously formed in the vapor deposition device or the sputtering device in which the electrode metal layer 13A is formed without exposing the piezoelectric substrate 11 to the atmosphere.
[0011]
Subsequently, as shown in FIGS. 1E and 1F, the pad metal layer 12A is converted into an etching solution having a volume ratio of KI: KCl: I: H 2 O = 10: 5: 1: 44. Then, the pad metal layer 12A is selectively etched and removed, and the pad metal layer 12A is used as the bonding pad 12. At this time, the upper layer 13AA of the electrode metal layer 13A made of Cr or Ti protects the electrode metal layer 13A from wet etching.
[0012]
Further, as shown in FIG. 1 (G) and FIG. 1 (H), the electrode metal layer 13A is selectively etched by using photolithography and an etching technique, so that the electrode metal layer 13A is connected to the comb-shaped SAW electrode 13. I do. At this time, a dry etching method is used for the etching, and a mixed gas of BCl 3 and Cl 2 is used as the etching gas. In this step, the upper layer 13AA, the middle layer 13AB, and the lower layer 13AC of the electrode metal layer 13A can be etched at one time.
[0013]
The etching of the electrode metal layer 13A is performed using a resist pattern (not shown) formed on the electrode metal layer 13A as a mask. When this resist pattern is formed, a developing solution is used. Since the resist pattern is formed on the surface of the electrode metal layer 13A, the developer contacts the electrode metal layer 13A when forming the resist pattern. The upper layer 13AA of the electrode metal layer 13A, which is a layer of Cr or Ti, protects the electrode metal layer 13A, especially the middle layer 13AB, from this developer. Further, the upper layer 13AA of the electrode metal layer 13A has an effect of improving the power durability of the SAW device.
[0014]
The lower layer 13AC of the electrode metal layer 13A, which is a Cr layer, functions as an etching stopper for the electrode metal layer 13A. That is, since the lower layer 13AC, which is a Cr layer, is less likely to be etched than the middle layer 13AB, which is an Al-Cu layer, the etching of the electrode metal layer 13A proceeds, and when the lower layer 13AC is exposed, the etching speed is reduced. By doing so, damage to the piezoelectric substrate 11 below the electrode metal layer 13A can be minimized.
[0015]
Then, as shown in FIG. 1 (I) and FIG. 1 (J), an oxide film 14 is formed on the entire surface by using a sputtering apparatus to protect the SAW electrode 13.
[0016]
Finally, as shown in FIGS. 1K and 1L, the oxide film 14 is opened by using photolithography and an etching technique so that a part of the bonding pad 12 is exposed.
[0017]
As described above, in the above embodiment of the present invention, the upper layer 13AA of the electrode metal layer 13A to be the SAW electrode 13 is a layer of Cr or Ti. Therefore, when the pad metal layer 12A is etched to form the bonding pad 12, the electrode metal layer 13A can be protected, so that the SAW electrode 13 is not etched. Therefore, the shape of the SAW electrode 13 does not change. Therefore, it is possible to provide a SAW device having more excellent characteristics. Further, since the electrode metal layer 13A serving as the SAW electrode 13 and the pad metal layer 12A serving as the bonding pad 12 are formed continuously, an effect of improving the adhesion between the SAW electrode 13 and the bonding pad 12 can be expected.
[0018]
【The invention's effect】
As described above, in the present invention, since the lift-off method is not used for forming the bonding pad, the shape of the bonding pad is stabilized. Further, for the same reason, a part of the pad metal layer does not adhere to the bonding pad or the oxide film. Therefore, a precise bonding pad can be formed. Furthermore, since the SAW electrode is formed of a plurality of layers, and especially the upper layer of the SAW electrode is formed of a Cr or Ti layer that is resistant to wet etching, the shape of the SAW electrode changes when the pad metal layer is etched to form a bonding pad. There is no end. Therefore, it is possible to provide a SAW device having more excellent characteristics.
[Brief description of the drawings]
1A and 1B are a cross-sectional view and a plan view illustrating a method for manufacturing a SAW device according to a first embodiment.
FIG. 2 is a sectional view showing a structure of an electrode metal layer in the first embodiment.
[Explanation of symbols]
11 Substrate 12 Pad metal layer 12A Bonding pad 13 Electrode metal layer 13A SAW electrode 14 Oxide film

Claims (6)

２つの層からなり、前記２つの層のうち、上層がＣｒまたはＴｉからなる電極メタル層を、圧電基板上に形成する工程と、
前記電極メタル層上に、パッドメタル層を形成する工程と、
前記パッドメタル層を選択的に除去する工程と、
前記パッドメタル層を選択的に除去した後、前記電極メタル層を選択的に除去する工程と、
前記電極メタル層を選択的に除去した後、残存した前記パッドメタル層及び残存した前記電極メタル層を覆うように、絶縁膜を形成する工程と、
前記絶縁膜を選択的に除去して、前記パッドメタル層の一部を露出させる工程とを有することを特徴とするＳＡＷデバイスの製造方法。Forming an electrode metal layer made of two layers, of which the upper layer is made of Cr or Ti, on the piezoelectric substrate;
Forming a pad metal layer on the electrode metal layer;
Selectively removing the pad metal layer;
After selectively removing the pad metal layer, selectively removing the electrode metal layer;
After selectively removing the electrode metal layer, forming an insulating film so as to cover the remaining pad metal layer and the remaining electrode metal layer;
Selectively removing the insulating film to expose a part of the pad metal layer. 前記パッドメタル層の材質に、Ａｕを選択することを特徴とする請求項１記載のＳＡＷデバイスの製造方法。2. The method for manufacturing a SAW device according to claim 1, wherein Au is selected as a material of the pad metal layer. 前記電極メタル層の前記２つの層のうち、下層の材質に、Ａｌの合金またはＡｌを選択することを特徴とする請求項１記載のＳＡＷデバイスの製造方法。2. The method for manufacturing a SAW device according to claim 1, wherein an Al alloy or Al is selected as a material of a lower layer of the two layers of the electrode metal layer. 前記電極メタル層は、３つの層からなり、前記３つの層のうち、最下層がＣｒ層である構造のものを選択することを特徴とする請求項１記載のＳＡＷデバイスの製造方法。2. The method for manufacturing a SAW device according to claim 1, wherein the electrode metal layer includes three layers, and a layer having a structure in which a lowermost layer is a Cr layer is selected from the three layers. 前記絶縁膜に、酸化膜を選択することを特徴とする請求項１記載のＳＡＷデバイスの製造方法。2. The method according to claim 1, wherein an oxide film is selected as the insulating film. 前記電極メタル層と、前記パッドメタル層を同一チャンバ内にて連続形成することを特徴とする請求項１記載のＳＡＷデバイスの製造方法。2. The method according to claim 1, wherein the electrode metal layer and the pad metal layer are continuously formed in the same chamber.
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US7600303B1 (en) * 2006-05-25 2009-10-13 Maxim Integrated Products, Inc. BAW resonator bi-layer top electrode with zero etch undercut
US7612488B1 (en) 2007-01-16 2009-11-03 Maxim Integrated Products, Inc. Method to control BAW resonator top electrode edge during patterning
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US7737612B1 (en) 2005-05-25 2010-06-15 Maxim Integrated Products, Inc. BAW resonator bi-layer top electrode with zero etch undercut
US8201311B1 (en) 2005-05-25 2012-06-19 Triquint Semiconductor, Inc. Process of making a BAW resonator bi-layer top electrode
US7600303B1 (en) * 2006-05-25 2009-10-13 Maxim Integrated Products, Inc. BAW resonator bi-layer top electrode with zero etch undercut
US8522411B1 (en) 2007-01-16 2013-09-03 Triquint Semiconductor, Inc. Method to control BAW resonator top electrode edge during patterning
US7612488B1 (en) 2007-01-16 2009-11-03 Maxim Integrated Products, Inc. Method to control BAW resonator top electrode edge during patterning
US7944750B1 (en) 2008-10-22 2011-05-17 Maxim Integrated Products, Inc. Multi-programmable non-volatile memory cell
US8969958B1 (en) 2009-11-13 2015-03-03 Maxim Integrated Products, Inc. Integrated MOS power transistor with body extension region for poly field plate depletion assist
US8946851B1 (en) 2009-11-13 2015-02-03 Maxim Integrated Products, Inc. Integrated MOS power transistor with thin gate oxide and low gate charge
US8963241B1 (en) 2009-11-13 2015-02-24 Maxim Integrated Products, Inc. Integrated MOS power transistor with poly field plate extension for depletion assist
US8987818B1 (en) 2009-11-13 2015-03-24 Maxim Integrated Products, Inc. Integrated MOS power transistor with thin gate oxide and low gate charge
US8630137B1 (en) 2010-02-15 2014-01-14 Maxim Integrated Products, Inc. Dynamic trim method for non-volatile memory products
US9129710B1 (en) 2010-02-15 2015-09-08 Maxim Integrated Products, Inc. Dynamic trim method for non volatile memory products
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US9343426B1 (en) 2010-06-02 2016-05-17 Maxim Integrated Products, Inc. Use of device assembly for a generalization of three-dimensional metal interconnect technologies
US10672748B1 (en) 2010-06-02 2020-06-02 Maxim Integrated Products, Inc. Use of device assembly for a generalization of three-dimensional heterogeneous technologies integration
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