JP2004134741A5 - - Google Patents

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JP2004134741A5
JP2004134741A5 JP2003171797A JP2003171797A JP2004134741A5 JP 2004134741 A5 JP2004134741 A5 JP 2004134741A5 JP 2003171797 A JP2003171797 A JP 2003171797A JP 2003171797 A JP2003171797 A JP 2003171797A JP 2004134741 A5 JP2004134741 A5 JP 2004134741A5
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Japan
Prior art keywords
solid
precursor
mixture
heat
precursors
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JP2003171797A
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Japanese (ja)
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JP4486794B2 (en
JP2004134741A (en
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【特許請求の範囲】
【請求項1】
基板を処理するための固体先駆物質から蒸気を生成する方法であって、
固体の先駆物質群を容器内に入れるステップと、
熱伝導材料に先駆物質群を散在させ、熱伝導材料と固体の先駆物質群の両方に熱エネルギーを加えることによって蒸気を形成するステップと、
前記容器から反応チャンバに蒸気を通すステップと
を含む方法。
【請求項2】
前記蒸気を反応させて前記基板上に層を堆積するステップをさらに含む、請求項1に記載の方法。
【請求項3】
前記熱伝導材料に前記固体の先駆物質群を散在させるステップが、混合物中に前記熱伝導材料を約10体積%〜80体積%有する固体混合物を形成することを含む、請求項1に記載の方法。
【請求項4】
前記熱伝導材料に前記固体の先駆物質群を散在させるステップが、混合物中に前記熱伝導材料を約30体積%〜60体積%有する固体混合物を形成することを含む、請求項1に記載の方法。
【請求項5】
先駆物質に熱を分布させることによって固体先駆物質から蒸気を形成するための基板処理システムであって、
固体の先駆物質群を保持するように構成された容器と、
前記固体の先駆物質群を散在させた複数の熱伝導要素とを含み
前記熱伝導要素は、前記容器内に挿入された複数のロッドであり、前記各ロッドがロッドの主軸に沿って熱を伝達するように構成されている、システム。
【請求項6】
前記容器が熱伝導容器である、請求項5に記載のシステム。
【請求項7】
前記容器に流体連結された反応チャンバをさらに含み、当該チャンバが、基板上に層を堆積するため容器から生じる蒸気の反応に適した環境を提供するように構成されている、請求項5に記載のシステム。
【請求項8】
前記反応チャンバが化学気相成長チャンバ(CVD)である、請求項7に記載のシステム。
【請求項9】
前記反応チャンバが原子層堆積チャンバ(ALD)である、請求項7に記載のシステム。
【請求項10】
前記固体の先駆物質群が粉末形態である、請求項5に記載のシステム。
【請求項11】
前記熱伝導要素が、前記容器内の反応に対して実質的に不活性な物質から形成される、請求項5に記載のシステム。
【請求項12】
前記熱伝導要素が、前記容器内の反応に対して実質的に不活性な被覆を有する、請求項5に記載のシステム。
【請求項13】
前記容器を取り囲む真空チャンバをさらに含む、請求項5に記載のシステム。
【請求項14
前記ロッドが、前記容器に挿入されるように構成されたベースプレートに取付けられた、請求項に記載のシステム。
【請求項15
前記熱伝導要素が金属炭化物を含む、請求項に記載のシステム。
【請求項16
前記熱伝導要素が炭化ケイ素(SiC)を含む、請求項に記載のシステム。
【請求項17
前記熱伝導要素の熱伝導率が、室温で少なくとも約50W/m・Kである、請求項5に記載のシステム。
【請求項18】
前記熱伝導要素と前記先駆物質の両方に熱エネルギーを伝達するように構成されているヒータをさらに含む、請求項5に記載のシステム。
【請求項19
固体先駆物質から蒸気を形成するための基板処理システムであって、
固体の先駆物質群を保持するように構成された容器と、
前記容器に隣接したマイクロ波発振器であって、マイクロ波エネルギーの形をとる熱エネルギーを伝達して前記先駆物質の加熱を行うように構成された発振器と
を含むシステム。
【請求項20
基板処理に使用される蒸気を生成するための混合物であって、
基板処理蒸気を生成するためのバッチ処理分の先駆物質と、
バッチ処理分の先駆物質に散在させた複数の熱伝達固体物であって、これらが一括して前記バッチ処理分の先駆物質の熱伝導率を増大させる熱伝達固体物とを含み、
前記複数の熱伝達固体物が、粉末、球体、およびファイバからなる群から選択される、混合物。
【請求項21
前記複数の熱伝達固体物が、スクリーン、ふるい、コイル、およびプレートからなる群から選択される、請求項20に記載の混合物。
【請求項22
前記複数の熱伝達固体物が、金属炭化物、遷移金属炭化物、炭化ホウ素、および炭化ケイ素からなる群から選択された材料から形成される、請求項20に記載の混合物。
【請求項23
前記複数の熱伝達固体物が、前記基板処理で使用される所望の反応に対して実質的に不活性である、請求項20に記載の混合物。
【請求項24
前記複数の熱伝達固体物が、前記基板処理で使用される所望の反応に対して実質的に不活性な材料で被覆される、請求項20に記載の混合物。
【請求項25
前記複数の熱伝達固体物が、前記先駆物質バッチ処理分の縁部に近接した前記先駆物質から前記先駆物質バッチ処理分の実質上中央に位置する先駆物質に、熱を伝導するように構成された、請求項20に記載の混合物。

[Claims]
(1)
A method of producing vapor from a solid precursor for processing a substrate, comprising:
Placing the solid precursors in a container;
Interspersing the precursors in the heat conducting material and forming a vapor by applying thermal energy to both the heat conducting material and the solid precursors;
Passing steam from the vessel to the reaction chamber.
(2)
The method of claim 1, further comprising reacting the vapor to deposit a layer on the substrate.
(3)
The method of claim 1, wherein the step of interspersing the solid precursors with the thermally conductive material comprises forming a solid mixture having about 10% to 80% by volume of the thermally conductive material in the mixture. .
(4)
The method of claim 1, wherein the step of interspersing the solid precursors with the thermally conductive material comprises forming a solid mixture having about 30% to 60% by volume of the thermally conductive material in the mixture. .
(5)
A substrate processing system for forming a vapor from a solid precursor by distributing heat to the precursor, comprising:
A container configured to hold a group of solid precursors;
And a plurality of heat conductive elements interspersed the precursor group of the solid,
The system wherein the heat conducting element is a plurality of rods inserted into the container, wherein each of the rods is configured to transfer heat along a main axis of the rod .
6.
The system according to claim 5, wherein the container is a heat transfer container.
7.
6. The reaction chamber of claim 5, further comprising a reaction chamber fluidly connected to the vessel, the chamber configured to provide a suitable environment for the reaction of vapor emanating from the vessel to deposit a layer on a substrate. System.
8.
The system according to claim 7, wherein the reaction chamber is a chemical vapor deposition chamber (CVD).
9.
The system according to claim 7, wherein the reaction chamber is an atomic layer deposition chamber (ALD).
10.
6. The system of claim 5, wherein the solid precursors are in powder form.
11.
The system according to claim 5, wherein the heat conducting element is formed from a substance that is substantially inert to the reaction in the vessel.
12.
The system of claim 5, wherein the heat conducting element has a coating that is substantially inert to reactions in the vessel.
Claim 13
The system of claim 5, further comprising a vacuum chamber surrounding the container.
Claim 14
The system of claim 5 , wherein the rod is mounted on a base plate configured to be inserted into the container.
Claim 15
The system of claim 5 , wherein the heat conducting element comprises a metal carbide.
[Claim 16 ]
The system of claim 5 , wherein the heat conducting element comprises silicon carbide (SiC).
[Claim 17 ]
The system of claim 5, wherein the thermal conductivity of the heat conducting element is at least about 50 W / mK at room temperature.
18.
The system of claim 5, further comprising a heater configured to transfer thermal energy to both the heat conducting element and the precursor.
[Claim 19 ]
A substrate processing system for forming a vapor from a solid precursor, comprising:
A container configured to hold a group of solid precursors;
A microwave oscillator adjacent to the container, the oscillator configured to transfer heat energy in the form of microwave energy to effect heating of the precursor.
20.
A mixture for producing steam used in substrate processing,
Precursors for batch processing to generate substrate processing steam;
A plurality of heat transfer solids scattered over the batch of precursors, which collectively increase the thermal conductivity of the batch of precursors ;
A mixture wherein the plurality of heat transfer solids are selected from the group consisting of powders, spheres, and fibers .
21.
Wherein the plurality of heat transfer solid is cleans sieve is selected from the group consisting of coil, and plate, mixture of claim 20.
22.
21. The mixture of claim 20 , wherein the plurality of heat transfer solids are formed from a material selected from the group consisting of metal carbides, transition metal carbides, boron carbide, and silicon carbide.
23.
21. The mixture of claim 20 , wherein the plurality of heat transfer solids are substantially inert to a desired reaction used in the substrate processing.
[Claim 24 ]
21. The mixture of claim 20 , wherein the plurality of heat transfer solids are coated with a material that is substantially inert to a desired reaction used in the substrate processing.
25.
The plurality of heat transfer solids are configured to conduct heat from the precursor proximate an edge of the precursor batch to a precursor substantially centrally located in the precursor batch. A mixture according to claim 20 .

JP2003171797A 2002-06-17 2003-06-17 Method for generating vapor from solid precursor, substrate processing system and mixture Expired - Lifetime JP4486794B2 (en)

Applications Claiming Priority (1)

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US38952802P 2002-06-17 2002-06-17

Publications (3)

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JP2004134741A JP2004134741A (en) 2004-04-30
JP2004134741A5 true JP2004134741A5 (en) 2006-07-20
JP4486794B2 JP4486794B2 (en) 2010-06-23

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EP1866074A4 (en) * 2005-03-16 2017-01-04 Entegris Inc. System for delivery of reagents from solid sources thereof
SG171606A1 (en) 2006-04-26 2011-06-29 Advanced Tech Materials Cleaning of semiconductor processing systems
US7678458B2 (en) 2007-01-24 2010-03-16 Asml Holding N.V. Bonding silicon silicon carbide to glass ceramics
KR20110005683A (en) 2008-02-11 2011-01-18 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 Ion source cleaning in semiconductor processing systems
US8741062B2 (en) * 2008-04-22 2014-06-03 Picosun Oy Apparatus and methods for deposition reactors
US20160046408A1 (en) * 2015-10-27 2016-02-18 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Internally coated vessel for housing a metal halide
KR20190073788A (en) 2017-12-19 2019-06-27 주식회사 티씨케이 Manufacturing method for carbonized tantalum coating layer using chemical vapor deposition and property of carbonized tantalum using the same

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JPH0620051B2 (en) * 1987-08-27 1994-03-16 宇部興産株式会社 Method of filling cylinder of organometallic compound
JP2651530B2 (en) * 1988-04-15 1997-09-10 住友化学工業株式会社 Organometallic compound supply equipment for vapor phase growth
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