JP2004133109A - Method for manufacturing substrate having thin film formed thereon, method for manufacturing electrooptical device, electrooptical device, and electronic appliance - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a substrate having a thin film which suppresses a display defect on a display surface of an electrooptical panel formed thereon, an electrooptical device and an electronic appliance. <P>SOLUTION: The method for manufacturing the substrate is provided with: a step to heat a substrate 101 (102) having a first surface 101a (102a) and a second surface 101b (102b) placed opposite to each other by maintaining a temperature difference between the first surface 101a (102a) and the second surface 101b (102b); and a step to deposit the thin film on the first surface 101a (102a) of the heated substrate 101 (102). <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a method for manufacturing a substrate on which a thin film is formed, a method for manufacturing an electro-optical device having the substrate on which the thin film is formed, an electro-optical device manufactured by the manufacturing method, and an electronic apparatus equipped with the electro-optical device. About.
[0002]
[Prior art]
A liquid crystal device as an electro-optical device includes a first substrate having a first electrode, a second substrate having a second electrode, a sealant for bonding the substrates which are opposed to each other, and a first substrate. And a liquid crystal as an electro-optical material sealed in a gap surrounded by the second substrate and the sealing material.
[0003]
Since the first electrode and the second electrode are formed from a transparent conductive material such as ITO (Indium Tin Oxide), they must be formed without affecting the display surface of the liquid crystal panel. Can be.
[0004]
[Problems to be solved by the invention]
However, since the ITO thin film sputtered as an electrode has a tensile stress on the substrate of the liquid crystal panel, the substrate surface side on which the ITO thin film is formed becomes convex, and the horizontal state cannot be maintained. For this reason, there is a problem that uniform display cannot be performed on the liquid crystal display surface, and display failure occurs.
[0005]
The present invention has been made in view of the above circumstances, and is directed to a method of manufacturing a substrate on which a thin film capable of suppressing display defects of a display surface of an electro-optical panel is formed, a method of manufacturing an electro-optical device, an electro-optical device, and The purpose is to provide electronic equipment.
[0006]
[Means for Solving the Problems]
The method of manufacturing a substrate on which a thin film is formed according to the present invention includes the steps of: heating the first surface and the second surface of the substrate having a first surface and a second surface that face each other with a temperature difference; Forming a thin film on the first surface of the formed substrate.
[0007]
According to such a configuration, heating is performed with a temperature difference between the first surface and the second surface of the substrate, for example, the surface temperature of the second surface is higher than the surface temperature of the first surface, and the second surface side of the substrate is heated. Deflected to be convex. In this bent state, a thin film of a material having a tensile stress is formed on the first surface, and bending of the substrate due to the tensile stress of the thin film is prevented, so that display defects on the display surface can be suppressed. On the other hand, in the case of a thin film of a material having a compressive stress, the surface temperature of the first surface is set higher than the surface temperature of the second surface, and the substrate is bent so that the first surface side of the substrate becomes convex. In this state, a thin film having a compressive stress is formed on the first surface, so that the substrate can be similarly prevented from bending, and display defects on the display surface can be suppressed.
[0008]
According to one embodiment of the present invention, the substrate includes glass.
[0009]
According to such a configuration, it is also applicable to a case where a thin film is formed on a glass substrate.
[0010]
According to one embodiment of the present invention, the thickness of the substrate is 0.3 mm to 1.1 mm.
[0011]
According to such a configuration, if the thickness of the substrate is smaller than 0.3 mm, the temperature can be sufficiently propagated and it is impossible to heat the substrate with a temperature difference. It is difficult to heat to form
[0012]
According to one aspect of the invention, the temperature difference is between 50 ° C and 100 ° C.
[0013]
According to such a configuration, if the temperature difference is smaller than 50 ° C., it is impossible to form a desired deflection, and if it is larger than 100 ° C., the temperature difference becomes too large to be balanced with the effect of the film. This causes a problem that the substrate does not become a flat plate.
[0014]
According to one embodiment of the present invention, the thickness of the thin film is 100 nm to 600 nm.
[0015]
According to such a configuration, if the thickness is less than 100 nm, the stress of the film is small, so that the deflection of the substrate does not often become a problem. If the thickness is more than 600 nm, the film is peeled off by the stress of the film, and it becomes difficult to form a pattern. There is a problem that can not be.
[0016]
According to one embodiment of the present invention, the first surface is heated to a lower temperature than the second surface, and the thin film includes an oxide of indium and tin.
[0017]
According to such a configuration, the first surface is heated at a lower temperature than the second surface, so that the second surface side of the substrate is bent in a convex shape, and in this state, indium and tin having tensile stress are applied. Since the oxide thin film is formed on the first surface side, the substrate after film formation can be kept horizontal.
[0018]
According to one aspect of the invention, the first surface is heated to a higher temperature than the second surface, and the thin film has chromium.
[0019]
According to such a configuration, the second surface is heated at a lower temperature than the first surface, so that the first surface side of the substrate is bent in a convex shape, and a chromium thin film having a compressive stress in this state. Is formed on the first surface side, the substrate after film formation can be kept in a horizontal state.
[0020]
In the method of manufacturing an electro-optical device having a substrate according to the present invention, the first and second surfaces of the substrate having the opposing first and second surfaces of the electro-optical device are heated by setting a temperature difference between the first and second surfaces. And forming a thin film on the first surface of the heated substrate.
[0021]
According to such a configuration, heating is performed with a temperature difference between the first surface and the second surface of the substrate, for example, the surface temperature of the second surface is higher than the surface temperature of the first surface, and the second surface side of the substrate is heated. Deflected to be convex. In this bent state, a thin film of a material having a tensile stress is formed on the first surface, and bending of the substrate due to the tensile stress of the thin film is prevented, so that an electro-optical device that suppresses display defects on the display surface is manufactured. Can be. On the other hand, in the case of a thin film of a material having a compressive stress, the surface temperature of the first surface is set higher than the surface temperature of the second surface, and the substrate is bent so that the first surface side of the substrate becomes convex. Since a thin film having a compressive stress is formed on the first surface in this state, it is possible to manufacture an electro-optical device in which the substrate is similarly prevented from bending and display defects on the display surface are suppressed.
[0022]
The electro-optical device of the present invention includes a first substrate on which a thin film is formed on one surface in a state of being heated with a temperature difference between the front and back, and one of the first substrates in a state of being heated with a temperature difference between the front and back. A second substrate on which a thin film is formed on a surface, a sealing material for bonding the first substrate and the second substrate arranged such that the surfaces on which the thin films are formed face each other; And an electro-optical material sealed in a region surrounded by the first substrate, the second substrate, and the sealant.
[0023]
According to such a configuration, the temperature difference between the front and back surfaces of the substrate during film formation is adjusted according to the characteristics of the thin films formed on the first substrate and the second substrate, respectively. In addition, the substrate after film formation can be kept horizontal for both the second substrate and the second substrate. For example, the surface temperature of the back surface of the substrate is made higher than the surface temperature of the front surface, the back surface of the substrate is bent so as to be convex, and a thin film of a material having a tensile stress is formed on the surface in the bent state. Thus, the substrate after film formation can be held in a horizontal state. On the other hand, the surface temperature of the front surface of the substrate is made higher than the surface temperature of the back surface, and the substrate is bent so that the front surface side becomes convex, and a thin film of a material having a compressive stress is formed on the back surface in the bent state. Thus, the substrate after film formation can be held in a horizontal state. Therefore, in such an electro-optical device in which two substrates in a horizontal state are used, the gap between the two substrates on the display surface can be made uniform in thickness, so that there is no display unevenness. High display quality.
[0024]
An electronic apparatus according to another aspect of the invention includes the electro-optical device described above.
[0025]
According to such a configuration, since such an electro-optical device is mounted, an electronic apparatus in which display defects are suppressed is provided.
[0026]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the drawings.
[0027]
<First embodiment>
First, a first embodiment in which the present invention is applied to a liquid crystal device as an electro-optical device will be described.
[0028]
(Liquid crystal device)
Hereinafter, a passive matrix type liquid crystal device employing a COG (Chip On Glass) method will be described as an example of an electro-optical device according to the present invention with reference to FIGS.
[0029]
FIG. 1 is a perspective view schematically showing the appearance of the liquid crystal device of the present embodiment. FIG. 2 is a perspective view schematically showing an exploded state of the liquid crystal device. FIG. 3 is a sectional view showing a part of the liquid crystal device.
[0030]
As shown in FIGS. 1, 2, and 3, in the liquid crystal device 100, a second substrate 102 formed of glass or the like and a first substrate 101 similarly formed of glass or the like form a sealing material 30. It is adhesively fixed with a predetermined gap therebetween. The sealing material 30 has a cut-off portion as a liquid crystal injection port 30a when injecting liquid crystal, and the liquid crystal injection port 30a is sealed with a sealing material 30b made of an ultraviolet curable resin. On the second substrate 102 and the first substrate 101, a driving segment electrode 112 and a common electrode 111 are formed in a stripe shape by a transparent ITO film or the like in directions orthogonal to each other.
[0031]
In addition, alignment films 104 and 103 are formed on the surfaces of the second substrate 102 and the first substrate 101, and various liquid crystals such as STN (Super Twisted Nematic) can be used as the liquid crystal 109 of the electro-optical material.
[0032]
The pixel is constituted by a liquid crystal 109 to which a voltage is applied at the intersection of the common electrode 111 and the segment electrode 112. The driving IC 7 outputs an address signal to the common electrode 111 and a display signal to the segment electrode 112. Further, a retardation plate 105 and a polarizing plate 107 are attached to the outer surface of the first substrate 101, and a retardation plate 106 and a polarizing plate 108 are attached to the outer surface of the second substrate 102.
[0033]
In the liquid crystal device 100 of the present embodiment, since the first substrate 101 is larger than the second substrate 102, a part of the first substrate 101 projects from the edge of the second substrate 102. A flexible wiring board connection region 80 is formed along the edge of the first substrate 101 in the protruding portion 110 of the first substrate 101, and a flexible wiring board connection region is formed inside the flexible wiring board connection region 80. An IC mounting area 70 is formed in parallel with the connection area 80. The IC mounting area 70 is an area for mounting the driving IC 7, and the flexible wiring board connection area 80 is the area where the flexible wiring board 8 that supplies power and display data to the driving IC 7 from the outside is mounted on the first substrate 101. This is an area for connection. The driving IC 7 outputs a driving signal such as an address signal or a display signal to each of the common electrode 111 and the segment electrode 112 in order to drive each pixel of the liquid crystal device. In a chip state, the chip is mounted by a COG method with the active surface facing the substrate.
[0034]
Note that when the second substrate 102 and the first substrate 101 are bonded to each other with the sealant 30, the segment electrodes 112 formed on the second substrate 102 An end of the wiring 94 extending from both ends is electrically connected via an inter-substrate conductive material included in the sealant 30.
[0035]
(Deposition equipment)
FIG. 4 is a schematic plan view of a sputtering apparatus 300 formed from five chambers 301 to 305 including a sputtering chamber 303.
[0036]
In the sputtering apparatus 300, the two substrates 101 and 102 are heated and bent by applying a temperature difference between the front and back surfaces thereof, and have a tensile stress in the sputter chamber 303a on the bent substrates 101 and 102. This is a device that sputters a film material such as ITO and then returns the substrates 101 and 102 to a horizontal state by cooling. A detailed description of the sputtering apparatus 300 will be described later.
[0037]
(Method of manufacturing liquid crystal device)
FIG. 5 is a manufacturing process diagram for the method for manufacturing the liquid crystal device according to the present embodiment.
[0038]
A method for manufacturing a liquid crystal device according to the present embodiment will be described with reference to FIGS.
[0039]
First, the first surface 101a and the second surface 101b of the first substrate 101 facing each other and the first surface 102a and the second surface 102b of the second substrate 102 are heated with a temperature difference between them (step). 501). In other words, the first substrate 101 and the second substrate 102 are heated with a temperature difference between the front and back. Hereinafter, step 501 will be described in detail.
[0040]
As shown in FIG. 4, the two glass substrates 101 and 102 open and close the vacuum door 311 and are transferred to the vacuum heating chamber 301 by a transfer unit (not shown). The pressure in the vacuum heating chamber 301 is 0.01 Pa to atmospheric pressure. The two substrates 101 and 102 are heated by a heater 301b to form second surfaces 101b and 102b of the two substrates 101 and 102, which are surfaces on which ITO as a transparent electrode is not sputtered (hereinafter, referred to as non-sputtered surfaces). Heat to ~ 350 ° C. Further, the first surfaces 101a and 102a, which are the surfaces on which the ITO as the transparent electrodes of the two substrates 101 and 102 are sputtered (hereinafter referred to as sputtered surfaces), are heated by the heaters 301a and 301c to 50 to 50 times more than the heater 301b. The heating is performed so as to be 100 ° C. lower to 150 ° C. to 300 ° C. The two substrates 101 and 102 are conveyed from room temperature to the vacuum heating chamber 301, and may be cracked when the temperature rises rapidly from room temperature. Here, heating is performed to evaporate moisture on the surfaces of the two substrates 101 and 102.
[0041]
Next, the two glass substrates 101 and 102 heated in the vacuum heating chamber 301 open and close the vacuum door 312 and are transported to the vacuum heating chamber 302 by transport means (not shown). The pressure in the vacuum heating chamber 302 is 0.0001 Pa to 1 Pa. The two substrates 101 and 102 heat the second surfaces 101b and 102b, which are the sputtering surfaces of the ITO of the two substrates 101 and 102, to a temperature of 200 to 350 ° C. by the heater 302b. The first surfaces 101a and 102a, which are the sputtering surfaces of the ITO of the two substrates 101 and 102, are heated by the heaters 302a and 302c to 150 to 300 ° C., which is 50 to 100 ° C. lower than the heater 302b. I do. In the vacuum heating chamber 302, the substrates 101 and 102 are bent such that the first surfaces 101a and 102a are convex by providing a temperature difference between the first surface and the second surface of each substrate. . These substrates 101 and 102 have a thickness of 0.3 mm to 1.1 mm. In other words, if the thickness is less than 0.3 mm, the temperature can be propagated so well that it is impossible to heat with a temperature difference, and if the thickness is more than 1.1 mm, heating is performed so as to form a desired deflection. Is difficult. When the temperature difference between the heaters 302a and 302c and the heater 302b in the vacuum heating chamber 302 is smaller than 50 degrees, it is impossible to form a desired bending. Therefore, it is difficult to balance with the effect of the film, and a problem that the substrate does not become a flat plate occurs. Therefore, it is preferable to set the temperature difference to 50 to 100 degrees.
[0042]
Next, ITO, which is a material of a transparent electrode, is applied to each of the two substrates 101 and 102 by a sputtering method, and patterned by photolithography to form a stripe with a predetermined width (step 502). Hereinafter, step 502 will be described in detail.
[0043]
The two substrates 101 and 102 bent in step 101 open and close the vacuum door 313, and are transferred from the vacuum heating chamber 302 to the sputtering chamber 303 by a transfer unit (not shown). The pressure in the sputtering chamber 303 is 0.0001 Pa to 1 Pa.
[0044]
A thin film of ITO is formed on the surfaces of the first surfaces 101a and 102a of the two substrates 101 and 102 in a bent state by a sputtering chamber 303 so as to have a thickness of 100 nm to 600 nm. When the thin film of ITO is thinner than 100 nm, the stress of the film is small, so that the bending of the substrate does not often become a problem. When it is thicker than 600 nm, the thin film is peeled off by the stress of the film, or it becomes difficult to form a pattern and cannot be put to practical use. Since there is a problem, the thickness is set to 100 nm to 600 nm.
[0045]
Next, the two glass substrates 101 and 102 on which ITO has been sputtered while being bent in the sputtering chamber 303 are opened and closed by the vacuum door 314 and transferred to the vacuum heating chamber 304 by a transfer unit (not shown). The pressure in the vacuum heating chamber 304 is 0.0001 Pa to 1 Pa. The two substrates 101 and 102 heat the non-sputtered second surfaces 101b and 102b of the two substrates 101 and 102 to 200 ° C. to 350 ° C. by the heater 304b. The first surfaces 101a and 102a, which are sputter surfaces, are heated by heaters 304a and 304c to a temperature of 150 to 300C.
[0046]
Further, the vacuum door 315 is opened and closed from the vacuum heating chamber 304, and is conveyed to the vacuum heating chamber 305 by conveyance means (not shown). The pressure in the vacuum heating chamber 305 is 0.0001 Pa to atmospheric pressure. Here, the temperature of the heater 305a and the heater 305c is set to 100 ° C. to 150 ° C., and the temperature of the heater 305b is set to 100 ° C. to 150 ° C., and the temperature is adjusted so that the substrate is gradually cooled and returned to room temperature to be in a horizontal state. .
[0047]
That is, the substrates 101 and 102 are bent in the vacuum heating chambers 301 and 302 by applying a temperature difference between the front and back surfaces of the substrates, and an ITO film having a tensile stress is sputtered in the sputtering chamber 303, and the vacuum heating chambers 304 and 305 Return the substrate to a horizontal state.
[0048]
After that, the vacuum door 316 is opened and closed from the vacuum heating chamber 305, and is conveyed to a device (hereinafter, referred to as a photolithography device) for performing a photolithography method (not illustrated) by a conveyance unit (not illustrated) to form an ITO film pattern.
[0049]
In this photolithography apparatus, first, a solid resist film is formed on an ITO film. Next, the resist film is patterned by exposing and developing the resist film via a mask. Thereafter, the ITO film is etched and patterned into a stripe shape using the resist film as a mask.
[0050]
Next, a polyimide film is formed on the first surfaces 101a and 102a of the two substrates 101 and 102 on which the transparent electrodes are respectively formed, and rubbing is performed to form alignment films 103 and 104. The manufacture of each of the substrates 101 and 102 is completed (ST503). As a result, the flatness of the surfaces of the alignment films 103 and 104 on the liquid crystal 109 side is ensured, the variation of the cell gap can be eliminated, and the image quality of the screen can be improved.
[0051]
Next, a gap material (not shown) is sprayed on the first surface of either one of the substrates by dry spraying or the like, and the first substrate 101 and the second substrate 102 are separated via the seal material 30. Pasting (ST504).
[0052]
Thereafter, liquid crystal is injected from the liquid crystal injection port 30a of the sealing material 30, and the liquid crystal injection port 30a of the sealing material 30 is sealed with a sealing material 30b such as an ultraviolet curable resin (ST505).
[0053]
Further, retardation plates 105 and 106 and polarizing plates 107 and 108 are attached to the outer surfaces of first substrate 101 and second substrate 102 by a method such as bonding (ST506).
[0054]
Finally, necessary wiring, a lighting device, a case body, and the like are attached to complete the liquid crystal device 100 as shown in FIGS.
[0055]
Hereinafter, the difference between the substrate manufactured by the conventional manufacturing method and the substrate manufactured by the manufacturing method of the present invention will be described.
[0056]
FIG. 6 is a diagram showing a change in a substrate before and after sputtering in a conventional manufacturing method, that is, when a material having a tensile stress such as ITO is formed on a substrate without a temperature difference between the front and back sides. FIG. 7 is a diagram showing a change before and after sputtering of a substrate in a case where a material having a tensile stress such as ITO is formed on a substrate with a temperature difference between the front and back sides, that is, the manufacturing method of the present invention.
[0057]
FIG. 6A shows a substrate 101 ′ in which a first surface 101 ′ a, which is a sputtered surface of ITO, is placed above and a second surface 101 ′ b, which is a non-sputtered surface, is placed below. FIG. 6B is a diagram in which a thin film 111 ′ of ITO is formed on the first surface 101′a of the substrate 101 ′. Since ITO has a tensile stress, it tends to spread in the direction of the arrow shown in the figure. As a result, as shown in FIG. 6C, there has been a problem that the substrate 101 'on which the ITO thin film 111' is formed is bent such that the first surface 101'a side becomes convex. The deflection h1 here is 1 mm to 10 mm. Due to the occurrence of such a deflection h1, the display surface does not become horizontal when assembled as a liquid crystal device, causing a problem that a display defect occurs.
[0058]
FIG. 7A shows a substrate 101 in which a first surface 101a, which is a sputtered surface of ITO, is on the top, and a second surface 101b, which is a non-sputtered surface, is on the bottom. FIG. 7B shows that, when the thin film 111 of ITO is formed in advance, the substrate on which the thin film manufactured by the conventional manufacturing method is formed is bent in a direction opposite to the bending direction, that is, the bending h2. The bending h2 here is performed by a method of heating the first surface 101a and the second surface 101b with a temperature difference. The bending h2 here is 1 mm to 10 mm, which is substantially the same as the conventional bending h1 as shown in FIG. FIG. 7C is a diagram in which a thin film 111 of ITO is formed on the first surface 101a of the substrate 101 that has been bent as shown in FIG. 7B. As described above, ITO has a tensile stress and tends to spread in the direction of the arrow shown in the figure, in the direction opposite to the bending here. As a result, as shown in FIG. 7D, the substrate 101 on which the ITO thin film 111 is formed becomes horizontal, so that display failure does not occur when assembled as a liquid crystal device.
[0059]
Thus, in the manufacturing method according to the present embodiment, the first surface 101a (102a) and the first surface 101a (102a) of the substrate 101 (102) having the opposing first surface 101a (102a) and second surface 101b (102b) are provided. A step of heating the second surface 101b (102b) with a temperature difference; and a step of forming a thin film on the first surface 101a (102a) of the heated substrate 101 (102). By doing so, bending of the substrate 101 (102) can be prevented, and display defects on the display surface can be suppressed.
[0060]
In the above-described embodiment, the passive matrix system is adopted, but the present invention can be applied to an active matrix system using switching elements.
[0061]
<Second embodiment>
A second embodiment of the present invention will be described. In the present embodiment, a color filter substrate used for displaying a liquid crystal device in color will be described as an example. The color filter substrate is, for example, a light-shielding film made of chromium on the substrate, a colored layer formed on the light-shielded film, an overcoat layer formed on the colored layer, and an electrode formed on the overcoat layer. Having. The light-shielding film is formed in a grid shape for partitioning each pixel, and is further formed in a frame shape so as to surround the grid, and the coloring layer is formed so as to fill the partitioned area. Chromium, which is a light shielding film material, is a material having a compressive stress as opposed to ITO having a tensile stress in the first embodiment. Hereinafter, a method of manufacturing a color filter substrate as a substrate on which a thin film is formed, particularly a method of forming a light-shielding film, will be mainly described.
[0062]
FIG. 8 is a schematic plan view of the sputtering apparatus.
[0063]
(Method of manufacturing color filter substrate)
A method for manufacturing a color filter substrate according to this embodiment will be described with reference to FIG.
[0064]
First, the opposing first surface 201a and second surface 201b of the first substrate 201 are heated with a temperature difference. In other words, the first substrate 201 is heated with a temperature difference between the front and back. The details will be described below.
[0065]
As shown in FIG. 8, the first substrate 201 is opened and closed by the vacuum door 311 and is transferred to the vacuum heating chamber 301 by a transfer unit (not shown). The first substrate 201 is heated by a heater 301b so that the second surface 201b of the second substrate 202 on which the light-shielding film is not formed is heated to 100 ° C. to 200 ° C. Further, the first surface 201a of the first substrate 201 on which the light-shielding film is formed is heated by the heater 301a to 150 to 300 ° C., which is 50 to 100 ° C. higher than the heater 301 b. The first substrate 201 is conveyed from the room temperature to the vacuum heating chamber 301, and may be cracked when the temperature rises sharply from the room temperature.
[0066]
Next, the first substrate 201 heated in the vacuum heating chamber 301 opens and closes the vacuum door 312 and is transported to the vacuum heating chamber 302 by a transport unit (not shown). The pressure in the vacuum heating chamber 302 is 0.0001 Pa to 1 Pa. The first substrate 201 is heated by a heater 302b so that the second surface 201b of the first substrate 201, which is a non-sputtered surface of Cr, is heated to 100 ° C. to 200 ° C. Further, the first surface 201a of the first substrate 201, which is a sputtering surface of Cr, is heated by the heater 302a to 150 to 300 ° C., which is higher by 50 to 100 ° C. than the heater 302b. In the vacuum heating chamber 302, the first surface 201a and the second surface 201b of the substrate are bent so that the first surface 201a side of the first substrate 201 becomes concave by providing a temperature difference between the first surface 201a and the second surface 201b.
[0067]
Next, Cr is deposited on the first substrate 201 by a sputtering method and patterned by a photolithography method to form a stripe with a predetermined width. The details will be described below.
[0068]
The first substrate 201 bent in step 501 is opened and closed by the vacuum door 313, and is transferred from the vacuum heating chamber 302 to the sputtering chamber 303 by a transfer unit (not shown).
[0069]
On the surface of the first surface 201a of the bent first substrate 201, a thin film of Cr is formed by a sputtering chamber 303 so as to have a thickness of 100 nm to 600 nm.
[0070]
Next, the first substrate 201, on which Cr has been sputtered in a bent state in the sputtering chamber 303, opens and closes the vacuum door 314, and is transferred to the vacuum heating chamber 304 by transfer means (not shown). The first substrate 201 heats the second surface 201b of the first substrate 201, which is the non-sputtered surface of Cr, to 100 ° C. to 200 ° C. by the heater 304b, and the first surface, which is the sputtered surface of Cr, The heater 201a is heated by the heater 304a so that the temperature of the heater 201a becomes 150 ° C. to 300 ° C.
[0071]
Further, the vacuum door 315 is opened and closed from the vacuum heating chamber 304, and is conveyed to the vacuum heating chamber 305 by conveyance means (not shown). Here, the temperature of the heater 305a is set to 100 ° C. to 150 ° C., and the temperature of the heater 305b is set to 100 ° C. to 150 ° C., and the substrate is cooled down gradually to room temperature, so that the substrate is in a horizontal state.
[0072]
That is, the first substrate 201 is bent in the vacuum heating chambers 301 and 302 by applying a temperature difference between the front and back of the first substrate 201, and a Cr film having a compressive stress in the sputter chamber 303 in the bent state. Is sputtered on the first substrate 201, and the first substrate 201 is gradually cooled in the vacuum heating chambers 304 and 305, returned to room temperature, and returned to a horizontal state.
[0073]
Thereafter, the vacuum door 316 is opened and closed from the vacuum heating chamber 305, and is conveyed to a photolithography apparatus (not shown) by a conveyance unit (not shown) to form a pattern of a Cr film.
[0074]
In this photolithography apparatus, first, a solid resist film is formed on a Cr film. Next, the resist film is patterned by exposing and developing the resist film via a mask. Thereafter, using the resist film as a mask, the Cr film is etched and patterned into a lattice shape and a frame shape surrounding the lattice shape to form a light shielding film.
[0075]
Next, a coloring layer, an overcoat layer, and an alignment film are formed on the first substrate 201 on which the light-shielding film is formed, and a color filter substrate is completed.
[0076]
FIG. 9 is a diagram showing changes before and after sputtering of a substrate in a conventional manufacturing method, that is, when a material having a compressive stress such as Cr is deposited on a substrate without a temperature difference between the front and back sides. FIG. 10 is a diagram showing a change before and after sputtering of a substrate in a case where a material having a compressive stress such as Cr is formed on a substrate by giving a temperature difference between the front and back sides, that is, the manufacturing method of the present invention.
[0077]
FIG. 9A shows a first substrate 201 ′ in which a first surface 201 ′ a, which is a sputtered surface of Cr, is placed above and a second surface 201 ′ b, which is a non-sputtered surface, is placed below. . FIG. 9B is a diagram in which a Cr thin film 211 ′ is formed on the first surface 201′a of the first substrate 201 ′. Since Cr has a compressive stress, it tends to spread in the direction of the arrow shown in the figure. As a result, as shown in FIG. 9C, the first substrate 201 'on which the ITO thin film 211' has been formed has a problem that the first surface 201'a is bent so as to be convex. Was. The deflection h21 here is 1 mm to 10 mm. Due to the occurrence of such a deflection h21, there is a problem that the display surface does not become horizontal when assembled as a liquid crystal device, and a display defect occurs.
[0078]
FIG. 10A shows a first substrate 201 in which a first surface 201a, which is a sputtering surface of Cr, is placed above and a second surface 201b, which is a non-sputtering surface, is placed below. In FIG. 10B, when the thin film 211 of Cr is formed in advance, the substrate on which the thin film manufactured by the conventional manufacturing method is formed is bent in a direction opposite to the bending direction h22. The bending h22 here is performed by a method of heating the first surface 201a and the second surface 201b with a temperature difference. The bending h2 here is 1 mm to 10 mm, which is substantially the same as the conventional bending h1 as shown in FIG. FIG. 10C is a diagram in which a Cr thin film 211 is formed on the first surface 201a of the first substrate 201 that has been bent according to FIG. 10B. As described above, Cr has a compressive stress and tends to spread in the direction of the arrow shown in the figure, in the direction opposite to the bending here. As a result, the first substrate 201 on which the Cr thin film 211 is formed is horizontal as shown in FIG. 10D, so that display failure does not occur when the liquid crystal device 100 is assembled.
[0079]
As described above, although there is a difference between the tensile stress and the compressive stress in the manufacturing method according to the present embodiment, display defects on the display surface can be suppressed as in the first embodiment.
[0080]
<Electronic equipment>
Further, an example in which the liquid crystal device 100 of the present invention is mounted on an electronic device will be described below.
[0081]
(Mobile phone)
FIG. 11 shows a mobile phone 911 as another embodiment of the electronic apparatus according to the invention. The mobile phone 911 shown here has a liquid crystal device incorporated in an outer frame having an earpiece 911b and a mouthpiece 911c in addition to a plurality of operation buttons 911a. This liquid crystal device can be configured using, for example, the liquid crystal device 1 shown in the above-described embodiment.
[0082]
FIG. 12 is a schematic configuration diagram illustrating the overall configuration of the present embodiment. The electronic apparatus shown here has a liquid crystal device 200 similar to the above, and control means 1200 for controlling the same. Here, the liquid crystal device 200 is conceptually divided into a panel structure 200A and a driving circuit 200B including a driving IC and the like. The control means 1200 includes a display information output source 1210, a display information processing circuit 1220, a power supply circuit 1230, and a timing generator 1240.
[0083]
The display information output source 1210 includes a memory such as a ROM (Read Only Memory) or a RAM (Random Access Memory), a storage unit such as a magnetic recording disk or an optical recording disk, and a tuning circuit for synchronizing and outputting a digital image signal. And is configured to supply display information to the display information processing circuit 1220 in the form of an image signal or the like in a predetermined format based on various clock signals generated by the timing generator 1240.
[0084]
The display information processing circuit 1220 includes various known circuits such as a serial-parallel conversion circuit, an amplification / inversion circuit, a rotation circuit, a gamma correction circuit, and a clamp circuit. Is supplied to the drive circuit 200B together with the clock signal CLK. The driving circuit 200B includes a scanning line driving circuit, a data line driving circuit, and an inspection circuit. The power supply circuit 1230 supplies a predetermined voltage to each of the above-described components.
[0085]
In addition to the above examples, the electronic apparatus according to the present invention includes a viewfinder type, a monitor direct-view type video tape recorder, a car navigation device, a pager, an electronic organizer, a word processor, a workstation, a videophone, and a POS terminal. And so on. Then, the liquid crystal device according to the present invention can be used as a display unit of these various electronic devices.
[Brief description of the drawings]
FIG. 1 is a perspective view schematically showing an appearance of a liquid crystal device according to a first embodiment of the present invention.
FIG. 2 is a perspective view schematically showing an exploded state of the liquid crystal device according to the first embodiment of the present invention.
FIG. 3 is a schematic cross-sectional view of a liquid crystal panel completed by the method for manufacturing a liquid crystal device according to the first embodiment of the present invention.
FIG. 4 is a schematic plan view of the sputtering apparatus according to the first embodiment of the present invention.
FIG. 5 is a manufacturing process diagram for a method for manufacturing the liquid crystal device according to the first embodiment of the present invention.
FIG. 6 is a diagram showing changes before and after sputtering a material having a tensile stress on a conventional substrate.
FIG. 7 is a diagram showing changes before and after sputtering a material having a tensile stress according to the first embodiment of the present invention.
FIG. 8 is a schematic plan view of a sputtering apparatus according to a second embodiment of the present invention.
FIG. 9 is a diagram showing changes before and after sputtering a material having a compressive stress on a conventional substrate.
FIG. 10 is a diagram showing changes before and after sputtering a material having a compressive stress according to a second embodiment of the present invention.
FIG. 11 is a diagram illustrating a mobile phone as an example of an electronic apparatus according to the invention.
FIG. 12 is a schematic configuration diagram illustrating an overall configuration of a mobile phone as an example of an electronic apparatus according to the invention.
[Explanation of symbols]
30 ... Seal material
100, 200: Liquid crystal device
101, 201: first substrate
102, 202: second substrate
101a, 102a, 201a, 202a ... first surface
101b, 102b, 201b, 102b ... second surface
109 ... LCD
111, 211 ... thin film
911… Mobile phone

Claims (10)

Heating the first surface and the second surface of the substrate having a first surface and a second surface facing each other with a temperature difference;
Forming a thin film on the first surface of the heated substrate. The method of claim 1, wherein the substrate comprises glass. 3. The method according to claim 1, wherein the thickness of the substrate is 0.3 mm to 1.1 mm. 4. The method according to claim 1, wherein the temperature difference is 50 ° C. to 100 ° C. 5. The method according to claim 1, wherein a thickness of the thin film is 100 nm to 600 nm. The thin film according to any one of claims 1 to 5, wherein the first surface is heated to a lower temperature than the second surface, and the thin film includes an oxide of indium and tin. Manufacturing method of the substrate. The method according to claim 1, wherein the first surface is heated to a temperature higher than that of the second surface, and the thin film includes chromium. Method. In a method for manufacturing an electro-optical device having a substrate,
Heating the first surface and the second surface of the substrate having the opposing first surface and second surface of the electro-optical device with a temperature difference;
Forming a thin film on the first surface of the heated substrate. A first substrate having a thin film formed on one surface while being heated with a temperature difference between the front and back;
A second substrate having a thin film formed on one surface while being heated with a temperature difference between the front and back,
A sealing material for bonding the first substrate and the second substrate arranged such that surfaces on which the thin films are formed face each other;
An electro-optical device, comprising: an electro-optical material sealed in a region surrounded by the first substrate, the second substrate, and the sealant. An electronic apparatus comprising the electro-optical device according to claim 9.

Images