JP2004128216A - Bonding wire - Google Patents

Bonding wire Download PDF

Info

Publication number
JP2004128216A
JP2004128216A JP2002290227A JP2002290227A JP2004128216A JP 2004128216 A JP2004128216 A JP 2004128216A JP 2002290227 A JP2002290227 A JP 2002290227A JP 2002290227 A JP2002290227 A JP 2002290227A JP 2004128216 A JP2004128216 A JP 2004128216A
Authority
JP
Japan
Prior art keywords
wire
bonding wire
bonding
gold
diameter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2002290227A
Other languages
Japanese (ja)
Other versions
JP3891282B2 (en
Inventor
Jun Meya
女屋　　純
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Metal Mining Co Ltd
Original Assignee
Sumitomo Metal Mining Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Metal Mining Co Ltd filed Critical Sumitomo Metal Mining Co Ltd
Priority to JP2002290227A priority Critical patent/JP3891282B2/en
Publication of JP2004128216A publication Critical patent/JP2004128216A/en
Application granted granted Critical
Publication of JP3891282B2 publication Critical patent/JP3891282B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/432—Mechanical processes
    • H01L2224/4321—Pulling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/435—Modification of a pre-existing material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/438—Post-treatment of the connector
    • H01L2224/4383—Reworking
    • H01L2224/43847—Reworking with a mechanical process, e.g. with flattening of the connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/438—Post-treatment of the connector
    • H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45013—Cross-sectional shape being non uniform along the connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45016—Cross-sectional shape being elliptic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01027—Cobalt [Co]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/012—Semiconductor purity grades
    • H01L2924/01204—4N purity grades, i.e. 99.99%
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20754—Diameter ranges larger or equal to 40 microns less than 50 microns

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a bonding wire which can maintain the workability of bonding even when the gold content is reduced, and is hard to be deformed by a sealing resin. <P>SOLUTION: This bonding wire is made of two extremely fine gold wires having a prescribed diameter bonded in parallel, or made of an extremely fine gold wire and an extremely fine gold alloy wire having a prescribed diameter bonded in parallel, or the bonding wire has an elliptical shape in its cross section having the longest diameter of 50 μm or less. When the bonding wire is used, the direction of the longest diameter 1 is made to meet with the flow-in direction of a resin for sealing with the resin, thereby reducing the needed amount of gold while maintaining the strength of the bonding wire. Hence, resource saving and cost reduction are made possible. <P>COPYRIGHT: (C)2004,JPO

Description

【０００１】
【発明の属する技術分野】
本発明は半導体装置の組立に用いられるボンディングワイヤーに関する。
【０００２】
【従来の技術】
半導体装置を組み立てるに際してリードフレーム等のダイ部にＩＣチップを搭載し、ＩＣチップの電極とリードフレーム等の電極とをボンディングワイヤーにより結線し、樹脂封止している。用いられるボンディングワイヤーは、電気特性、加工性などから純度９９．９９％の金を所望径になるまで伸線加工して作成されている。
【０００３】
近年、経済環境や環境問題から省資源化が強く要求されている。また、半導体装置の実装密度の高密度化に伴い線径の細いボンディングワイヤーが求められ、検討されている。線径を細くするとボンディングワイヤーの強度が低下する。このため、ＩＣチップとリードフレーム等とを結線した後の封止工程で、流し込まれる封止樹脂でボンディングワイヤーが封止樹脂の流れ方向に流されて隣に張られた金線と接触することが起きる。こうした不良をショート不良率というが、細線化が進めば進むほどショート不良率が高くなる（特許文献１　段落０００３　上から６〜８行目参照）。
【０００４】
こうした問題を解消するために、ボンディングワイヤー材料である金に不純物を添加し、得られるボンディングワイヤーの強度や硬度を高くすることが行われている（特許文献１　段落０００６〜０００７参照）。
【０００５】
しかし、強度や硬度が高くなると、ボンディング作業性の低下、ボンディングワイヤーの電気特性が使用目的の限界に近づくと行った問題が起きる。
【０００６】
【特許文献１】
特開平８−２９３５１４
【０００７】
【発明が解決しようとする課題】
本発明はこうした問題を回避しうる細線化されたボンディングワイヤーの提供を目的とする。
【０００８】
【課題を解決するための手段】
上記課題を解決する本第一の発明は、所望径の金極細線を二本並列して接合させたことを特徴とするボンディングワイヤーであり、その最長径が５０μｍ以下のものである。
【０００９】
また、本第二の発明は、所望径の金極細線と金合金極細線とを並列して接合させたことを特徴とするボンディングワイヤーであり、その最長径が５０μｍ以下のものである。
【００１０】
そして、本第三の発明はその断面が楕円形であり、その最長径が５０μｍ以下のものである。
【００１１】
【発明の実施の形態】
本発明では、図１に示したようにボンディングワイヤーの断面形状を二連球、あるいは楕円とし、最長径１の方向と樹脂封止時の樹脂の流入方向２とを一致させることによりボンディングワイヤーの強度を維持しつつ、必要とされる金量を削減する。持って、省資源化、低コスト化を可能とする。
【００１２】
上記細線化に伴う問題点は断面が円形のボンディングワイヤーの場合、その直径が３０μｍを切ると顕著化する。直径が３０μｍの極細線を二本並列して接合させた場合、その最長径は６０μｍとなる。よって、その最長径が５０μｍ以下のボンディングワイヤー、すなわち一本のボンディングワイヤーの直径が２５μｍ以下のものを二本並列して接合したものに対して本発明は好適である。
【００１３】
本第一および第二の発明は、所望径の金極細線を二本、あるいは金極細線と金合金極細線とを並列して相互に接合させたものである。そして、得られたボンディングワイヤーの最長径を５０μｍ以下とする。こうした略二連玉型の断面を有するボンディングワイヤーを用いるに際して、最長径の方向と封止樹脂の流れ込み方向とを略一致させることにより、ボンディングワイヤーが流入する封止樹脂により受ける圧力に対抗する力を、最長径を直径とする断面が円形のボンディングワイヤーの２倍程度に高めることが可能である。
【００１４】
本第一及び第二の発明のボンディングワイヤーを製造するに際して、まず所望径の１／２径の金極細線や金合金極細線を伸線加工により得る。この伸線加工では、通常ダイヤモンドダイスを連続的に通すことにより行う。その後、得られた所望の極細線を二本接触させた状態で熱処理炉を通す。こうすることにより二本の極細線は容易に接合し本発明のボンディングワイヤーとなる。
【００１５】
なお、熱処理温度は通常の選択基準で選択すれば良く、特に接合させるために温度を選定する必要はない。
【００１６】
本第三の発明はその断面が楕円形であり、その最長径が５０μｍ以下のものである。こうしたボンディングワイヤーを得るには、用いるダイスの開口部形状を楕円とすれば良い。こうした楕円の断面を有するボンディングワイヤーを用いるに際して、最長径の方向と封止樹脂の流れ込み方向とを略一致させることにより、ボンディングワイヤーが流入する封止樹脂により受ける圧力に対抗する力を、最長径を直径とする断面が円形の従来のボンディングワイヤーより大きく高めることが可能である。なお、本第三の発明は、金極細線、あるいは金合金極細線の双方に適用できる。
【００１７】
【実施例】
次に実施例を用いて本発明をさらに説明する。
（実施例１）
純度９９．９９％の金を溶解して棒状のインゴットを作成した。このインゴットを伸線加工して線径２０μｍの金極細線を得た。次に、この金極細線を二本並べて接触させつつ４５０℃の熱処理炉内を線速度５０ｍ／ｍｉｎで通過させて熱処理した。このようにして本発明の二連玉型の断面を有する本第一の発明のボンディングワイヤーを得た。なお、本ボンディングワイヤーの最長径は４０μｍとなっていた。
【００１８】
次に、４００ピンのリードフレームのダイ部にＩＣチップを半田付けして搭載し、リードフレームのリード部電極部とＩＣチップ表面電極部とを上記ボンディングワイヤーを用いて接続した。この際、ボンディングワイヤーの最長径の方向と後工程の樹脂封止時に樹脂が流れ込む方向とが一致するようにボンディングした。
【００１９】
次いで、ＩＣチップ及びボンディング部を覆う型を取り付け、内部に封止樹脂（住友ベークライト社製　商品名　ＥＭＥ−７７５２Ａ）を流し込み、封止した。その後、得られた１００個の半導体装置それぞれのワイヤーボンディング部にＸ線を当てて透過写真を撮り、ワイヤーの流れ状況を観察した。更に、導通試験を行いショート欠陥の有無を求めた。
【００２０】
本例ではいずれの半導体装置のワイヤー湾曲部においても、僅かに封止樹脂の圧力で流された部分が確認できたものの、ショート欠陥は検出されなかった。
【００２１】
（実施例２）
純度９９．９９％の金と下記組成の金合金とを、それぞれ溶解して棒状のインゴットを作成した。このインゴットを伸線加工して線径２０μｍの金極細線と金合金極細線とを得た。次に、金極細線と金合金極細線とを二本並べて接触させつつ４５０℃の熱処理炉内を線速度５０ｍ／ｍｉｎで通過させて熱処理した。このようにして本第二の発明の二連玉型断面を有するボンディングワイヤーを得た。なお、本ボンディングワイヤーの最長径は４０μｍとなっていた。
【００２２】

Figure 2004128216
次に、４００ピンのリードフレームのダイ部にＩＣチップを半田付けして搭載し、リードフレームのリード部電極部とＩＣチップ表面電極部とを上記ボンディングワイヤーを用いて接続した。この際、ボンディングワイヤーの最長径の方向と後工程の樹脂封止時に樹脂が流れ込む方向とが一致するようにボンディングした。
【００２３】
次いで、ＩＣチップ及びボンディング部を覆う型を取り付け、内部に封止樹脂（住友ベークライト社製　商品名　ＥＭＥ−７７５２Ａ）を流し込み、封止した。その後、得られた１００個の半導体装置それぞれのワイヤーボンディング部にＸ線を当てて透過写真を撮り、ワイヤーの流れ状況を観察した。更に、導通試験を行いショート欠陥の有無を求めた。
【００２４】
本例では、いずれの半導体装置でもワイヤー湾曲部のワイヤー流れも無視でき、ショート欠陥も検出されなかった。
【００２５】
（実施例３）
純度９９．９９％の金を溶解して棒状のインゴットを作成した。このインゴットを伸線加工して最長径４０μｍの金極細線を得た。この際、長径／短径＝２の楕円形開口部を有するダイヤモンドダイスを用いて伸線を行った。次に、この金極細線を４５０℃の熱処理炉内を線速度５０ｍ／ｍｉｎで通過させて熱処理した。このようにして本第三の発明の楕円型断面を有するボンディングワイヤーを得た。
【００２６】
次に、４００ピンのリードフレームのダイ部にＩＣチップを半田付けして搭載し、リードフレームのリード部電極部とＩＣチップ表面電極部とを上記ボンディングワイヤーを用いて接続した。この際、ボンディングワイヤーの最長径の方向と後工程の樹脂封止時に樹脂が流れ込む方向とが一致するようにボンディングした。
【００２７】
次いで、ＩＣチップ及びボンディング部を覆う型を取り付け、内部に封止樹脂（住友ベークライト社製　商品名　ＥＭＥ−７７５２Ａ）を流し込み、封止した。その後、得られた１００個の半導体装置それぞれのワイヤーボンディング部にＸ線を当てて透過写真を撮り、ワイヤーの流れ状況を観察した。更に、導通試験を行いショート欠陥の有無を求めた。
【００２８】
本例ではいずれの半導体装置のワイヤー湾曲部においても僅かに封止樹脂の圧力で流された部分が見られたものの、ショート欠陥は検出されなかった。
【００２９】
（実施例４）
純度９９．９９％の金を溶解して棒状のインゴットを作成した。このインゴットを伸線加工して線径２１μｍの断面が円形の金極細線を得た（実施例１，２のボンディングワイヤーと同断面積のものです）。次に、この金極細線を二本並べて接触させつつ４５０℃の熱処理炉内を線速度５０ｍ／ｍｉｎで通過させて熱処理した。このようにして本第二の発明の二連玉型断面を有するボンディングワイヤーを得た。
【００３０】
次に、４００ピンのリードフレームのダイ部にＩＣチップを半田付けして搭載し、リードフレームのリード部電極部とＩＣチップ表面電極部とを上記ボンディングワイヤーを用いて接続した。この際、ボンディングワイヤーの最長径の方向と後工程の樹脂封止時に樹脂が流れ込む方向とが一致するようにボンディングした。
【００３１】
次いで、ＩＣチップ及びボンディング部を覆う型を取り付け、内部に封止樹脂（住友ベークライト社製　商品名　ＥＭＥ−７７５２Ａ）を流し込み、封止した。その後、得られた１００個の半導体装置それぞれのワイヤーボンディング部にＸ線を当てて透過写真を撮り、ワイヤーの流れ状況を観察した。更に、導通試験を行いショート欠陥の有無を求めた。
【００３２】
本例ではいずれの半導体装置でもワイヤー湾曲部においても僅かに封止樹脂の圧力で流された部分が見られたものの、ショート欠陥は見られなかった。
【００３３】
（比較例１）
純度９９．９９％の金を溶解して棒状のインゴットを作成した。このインゴットを伸線加工して線径３０μｍの断面が円形の金極細線を得た。次に、この伸線を４５０℃の熱処理炉内を線速度５０ｍ／ｍｉｎで通過させて熱処理した。このようにして従来のボンディングワイヤーを得た。
【００３４】
次に、４００ピンのリードフレームのダイ部にＩＣチップを半田付けして搭載し、リードフレームのリード部電極部とＩＣチップ表面電極部とを上記ボンディングワイヤーを用いて接続した。
【００３５】
次いで、ＩＣチップ及びボンディング部を覆う型を取り付け、内部に封止樹脂（住友ベークライト社製　商品名　ＥＭＥ−７７５２Ａ）を流し込み、封止した。その後、得られた１００個の半導体装置それぞれのワイヤーボンディング部にＸ線を当てて透過写真を撮り、ワイヤーの流れ状況を観察した。更に、導通試験を行いショート欠陥の有無を求めた。
【００３６】
本例ではいずれの半導体装置でもワイヤー湾曲部がかなり流れ、ショート欠陥は８個検出された。
【００３７】
【発明の効果】
本第一および第二の発明は、１／２の径の金極細線を二本、あるいは金極細線と金合金極細線とを並列して相互に接合させて、所望最長径の略二連玉型の断面を有するボンディングワイヤーである。これを用いるに際して、最長径の方向と封止樹脂の流れ込み方向とを略一致させることにより、流入する封止樹脂に対抗する力を、最長径を直径とし、断面形状が円形のボンディングワイヤーより大きく高めることができる。
【００３８】
本第三の発明は、その断面が楕円形のものである。こうしたボンディングワイヤーを用いるに際して、最長径の方向と封止樹脂の流れ込み方向とを略一致させることにより、流入する封止樹脂に対抗する力を、最長径を直径とし、断面形状が円形のボンディングワイヤーより大きく高めることができる。
【００３９】
以上のことから分かるとおり、本発明では、ボンディングワイヤーの断面形状を二連球、あるいは楕円とし、最長径の方向と樹脂封止時の樹脂の流入方向とを一致させることにより封止樹脂の流入圧力に対抗する強度を維持しつつ、必要とされる金量の削減を可能とする。即ち、省資源化、低コスト化を可能とする。
【図面の簡単な説明】
【図１】本発明のボンディングワイヤーの断面図と封止樹脂の流れとを示した図である。
【符号の説明】
１――――最長径
２――――樹脂の流入方向[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a bonding wire used for assembling a semiconductor device.
[0002]
[Prior art]
When assembling a semiconductor device, an IC chip is mounted on a die portion such as a lead frame, and an electrode of the IC chip and an electrode such as a lead frame are connected by a bonding wire and sealed with resin. The bonding wire used is made by drawing a 99.99% pure gold wire to a desired diameter in view of electrical characteristics and workability.
[0003]
In recent years, there has been a strong demand for resource saving from the economic environment and environmental problems. In addition, as the mounting density of semiconductor devices is increased, a bonding wire having a thin wire diameter is required and studied. If the wire diameter is reduced, the strength of the bonding wire is reduced. For this reason, in the sealing process after connecting the IC chip and the lead frame, etc., the bonding wire is made to flow in the flow direction of the sealing resin with the poured sealing resin and comes into contact with the adjacent gold wire Happens. Such a defect is referred to as a short-circuit defect rate, and the short-circuit defect rate becomes higher as the thinning progresses (see paragraphs 6 to 8 on the top of Patent Document 1, paragraph 0003).
[0004]
In order to solve such a problem, an impurity is added to gold, which is a bonding wire material, to increase the strength and hardness of the resulting bonding wire (see paragraphs 0006 to 0007 of Patent Document 1).
[0005]
However, when the strength and hardness are increased, the bonding workability is deteriorated, and the problems caused when the electric characteristics of the bonding wire approach the limit of the intended use occur.
[0006]
[Patent Document 1]
JP-A-8-293514
[0007]
[Problems to be solved by the invention]
An object of the present invention is to provide a thinned bonding wire that can avoid such problems.
[0008]
[Means for Solving the Problems]
The first invention for solving the above-mentioned problem is a bonding wire characterized in that two gold fine wires having a desired diameter are joined in parallel, and has a longest diameter of 50 μm or less.
[0009]
The second invention is a bonding wire characterized by bonding a gold fine wire having a desired diameter and a gold alloy fine wire in parallel, and has a longest diameter of 50 μm or less.
[0010]
The third aspect of the present invention has an elliptical cross section and a longest diameter of 50 μm or less.
[0011]
DETAILED DESCRIPTION OF THE INVENTION
In the present invention, as shown in FIG. 1, the cross-sectional shape of the bonding wire is a double ball or an ellipse, and the direction of the longest diameter 1 and the inflow direction 2 of the resin at the time of resin sealing are made to coincide with each other. Reduce the amount of gold needed while maintaining strength. Therefore, resource saving and cost reduction are possible.
[0012]
In the case of a bonding wire having a circular cross section, the problem associated with the above-mentioned thinning becomes noticeable when the diameter is less than 30 μm. When two ultrafine wires having a diameter of 30 μm are joined in parallel, the longest diameter is 60 μm. Therefore, the present invention is suitable for a bonding wire having a longest diameter of 50 μm or less, that is, one in which two bonding wires having a diameter of 25 μm or less are joined in parallel.
[0013]
In the first and second inventions, two gold fine wires having a desired diameter, or a gold fine wire and a gold alloy fine wire are connected in parallel to each other. And the longest diameter of the obtained bonding wire shall be 50 micrometers or less. When using such a bonding wire having a substantially double ball-shaped cross section, the force that opposes the pressure received by the sealing resin into which the bonding wire flows is obtained by making the direction of the longest diameter substantially coincide with the flow direction of the sealing resin. The cross section with the longest diameter as the diameter can be increased to about twice that of the circular bonding wire.
[0014]
In manufacturing the bonding wires of the first and second inventions, first, a gold ultrafine wire or a gold alloy ultrafine wire having a desired diameter of 1/2 is obtained by wire drawing. This wire drawing is usually performed by continuously passing a diamond die. Then, it passes through the heat treatment furnace in a state where two desired fine wires obtained are in contact with each other. By doing so, the two extra fine wires are easily joined to form the bonding wire of the present invention.
[0015]
Note that the heat treatment temperature may be selected according to a normal selection criterion, and it is not necessary to select a temperature particularly for bonding.
[0016]
The third invention has an elliptical cross section and a longest diameter of 50 μm or less. In order to obtain such a bonding wire, the shape of the opening of the die used may be an ellipse. When using a bonding wire having such an elliptical cross section, the longest diameter and the flow direction of the sealing resin are made to substantially coincide with each other. It is possible to increase the cross section with a diameter larger than that of a conventional bonding wire having a circular shape. The third invention can be applied to both the gold fine wire and the gold alloy fine wire.
[0017]
【Example】
Next, the present invention will be further described using examples.
Example 1
A bar-shaped ingot was prepared by dissolving gold having a purity of 99.99%. The ingot was drawn to obtain a gold fine wire having a wire diameter of 20 μm. Next, heat treatment was performed by passing the gold fine wires through a 450 ° C. heat treatment furnace at a linear velocity of 50 m / min while being in contact with each other. In this way, the bonding wire of the first invention having the cross section of the double ball shape of the present invention was obtained. The longest diameter of the bonding wire was 40 μm.
[0018]
Next, the IC chip was soldered and mounted on the die part of the 400-pin lead frame, and the lead part electrode part of the lead frame and the IC chip surface electrode part were connected using the bonding wire. At this time, the bonding was performed such that the direction of the longest diameter of the bonding wire coincided with the direction in which the resin flowed during resin sealing in a subsequent process.
[0019]
Next, a mold that covers the IC chip and the bonding part was attached, and a sealing resin (trade name EME-7752A manufactured by Sumitomo Bakelite Co., Ltd.) was poured into the mold and sealed. Thereafter, a transmission photograph was taken by applying X-rays to the wire bonding portions of each of the 100 obtained semiconductor devices, and the flow state of the wires was observed. Further, a continuity test was performed to determine the presence or absence of a short defect.
[0020]
In this example, in the wire bending portion of any of the semiconductor devices, although a portion that was slightly swept by the pressure of the sealing resin could be confirmed, no short-circuit defect was detected.
[0021]
(Example 2)
Gold having a purity of 99.99% and a gold alloy having the following composition were respectively melted to form a rod-shaped ingot. The ingot was drawn to obtain a gold fine wire and a gold alloy fine wire having a wire diameter of 20 μm. Next, heat treatment was carried out by passing through a 450 ° C. heat treatment furnace at a linear velocity of 50 m / min while two fine gold wires and two fine gold alloy wires were in contact with each other. In this way, a bonding wire having a double ball section of the second invention was obtained. The longest diameter of the bonding wire was 40 μm.
[0022]
Figure 2004128216
Next, the IC chip was soldered and mounted on the die part of the 400-pin lead frame, and the lead part electrode part of the lead frame and the IC chip surface electrode part were connected using the bonding wire. At this time, the bonding was performed such that the direction of the longest diameter of the bonding wire coincided with the direction in which the resin flowed during resin sealing in a subsequent process.
[0023]
Next, a mold that covers the IC chip and the bonding part was attached, and a sealing resin (trade name EME-7752A manufactured by Sumitomo Bakelite Co., Ltd.) was poured into the mold and sealed. Thereafter, a transmission photograph was taken by applying X-rays to the wire bonding portions of each of the 100 obtained semiconductor devices, and the flow state of the wires was observed. Further, a continuity test was performed to determine the presence or absence of a short defect.
[0024]
In this example, the wire flow of the wire bending portion was negligible in any semiconductor device, and no short defect was detected.
[0025]
Example 3
A bar-shaped ingot was prepared by dissolving gold having a purity of 99.99%. This ingot was drawn to obtain a gold fine wire having a longest diameter of 40 μm. At this time, wire drawing was performed using a diamond die having an elliptical opening portion of major axis / minor axis = 2. Next, this fine gold wire was heat-treated by passing it through a 450 ° C. heat treatment furnace at a linear velocity of 50 m / min. Thus, a bonding wire having an elliptical cross section according to the third invention was obtained.
[0026]
Next, the IC chip was soldered and mounted on the die part of the 400-pin lead frame, and the lead part electrode part of the lead frame and the IC chip surface electrode part were connected using the bonding wire. At this time, the bonding was performed such that the direction of the longest diameter of the bonding wire coincided with the direction in which the resin flowed during resin sealing in a subsequent process.
[0027]
Next, a mold that covers the IC chip and the bonding part was attached, and a sealing resin (trade name EME-7752A manufactured by Sumitomo Bakelite Co., Ltd.) was poured into the mold and sealed. Thereafter, a transmission photograph was taken by applying X-rays to the wire bonding portions of each of the 100 obtained semiconductor devices, and the flow state of the wires was observed. Further, a continuity test was performed to determine the presence or absence of a short defect.
[0028]
In this example, a short-circuit defect was not detected although a slight portion of the wire bending portion of the semiconductor device was swept by the pressure of the sealing resin.
[0029]
(Example 4)
A bar-shaped ingot was prepared by dissolving gold having a purity of 99.99%. The ingot was drawn to obtain a gold fine wire having a circular section of 21 μm in diameter (having the same cross-sectional area as the bonding wires of Examples 1 and 2). Next, heat treatment was performed by passing the gold fine wires through a 450 ° C. heat treatment furnace at a linear velocity of 50 m / min while being in contact with each other. In this way, a bonding wire having a double ball section of the second invention was obtained.
[0030]
Next, the IC chip was soldered and mounted on the die part of the 400-pin lead frame, and the lead part electrode part of the lead frame and the IC chip surface electrode part were connected using the bonding wire. At this time, the bonding was performed such that the direction of the longest diameter of the bonding wire coincided with the direction in which the resin flowed during resin sealing in a subsequent process.
[0031]
Next, a mold that covers the IC chip and the bonding part was attached, and a sealing resin (trade name EME-7752A manufactured by Sumitomo Bakelite Co., Ltd.) was poured into the mold and sealed. Thereafter, a transmission photograph was taken by applying X-rays to the wire bonding portions of each of the 100 obtained semiconductor devices, and the flow state of the wires was observed. Further, a continuity test was performed to determine the presence or absence of a short defect.
[0032]
In this example, in any of the semiconductor devices, although a portion of the curved portion of the wire that was flowed by the pressure of the sealing resin was slightly observed, no short-circuit defect was observed.
[0033]
(Comparative Example 1)
A bar-shaped ingot was prepared by dissolving gold having a purity of 99.99%. The ingot was drawn to obtain an ultrafine gold wire having a circular cross section with a wire diameter of 30 μm. Next, this wire drawing was heat-treated by passing through a 450 ° C. heat treatment furnace at a linear velocity of 50 m / min. In this way, a conventional bonding wire was obtained.
[0034]
Next, the IC chip was soldered and mounted on the die part of the 400-pin lead frame, and the lead part electrode part of the lead frame and the IC chip surface electrode part were connected using the bonding wire.
[0035]
Next, a mold that covers the IC chip and the bonding part was attached, and a sealing resin (trade name EME-7752A manufactured by Sumitomo Bakelite Co., Ltd.) was poured into the mold and sealed. Thereafter, a transmission photograph was taken by applying X-rays to the wire bonding portions of each of the 100 obtained semiconductor devices, and the flow state of the wires was observed. Further, a continuity test was performed to determine the presence or absence of a short defect.
[0036]
In this example, the wire bending portion flowed considerably in any semiconductor device, and eight short defects were detected.
[0037]
【The invention's effect】
In the first and second inventions, two fine gold wires having a diameter of 1/2, or a gold fine wire and a gold alloy fine wire are connected to each other in parallel to form a substantially double ball having a desired longest diameter. A bonding wire having a cross section of a mold. When using this, by making the direction of the longest diameter and the flow direction of the sealing resin substantially coincide, the force against the inflowing sealing resin is larger than the bonding wire having the longest diameter as the diameter and the cross-sectional shape being circular. Can be increased.
[0038]
The third invention has an elliptical cross section. When using such a bonding wire, the direction of the longest diameter and the flow direction of the sealing resin are made to substantially coincide with each other, so that the force that opposes the sealing resin flowing in is the diameter of the longest diameter and the cross-sectional shape is a circular bonding wire. Can be greatly increased.
[0039]
As can be seen from the above, in the present invention, in the bonding wire, the cross-sectional shape of the bonding wire is a double ball or an ellipse, and the inflow of the sealing resin by matching the direction of the longest diameter with the inflow direction of the resin at the time of resin sealing The required amount of gold can be reduced while maintaining the strength against pressure. That is, resource saving and cost reduction are possible.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view of a bonding wire of the present invention and a flow of a sealing resin.
[Explanation of symbols]
1 --- Longest diameter 2 --- Plastic flow

Claims (3)

所望径の金極細線を二本並列して接合させたボンディングワイヤーであり、その最長径が５０μｍ以下であることを特徴とするボンディングワイヤー。A bonding wire obtained by bonding two gold fine wires having a desired diameter in parallel, and having a longest diameter of 50 μm or less. 所望径の金極細線と金合金極細線とを並列して接合させたボンディングワイヤーであり、その最長径が５０μｍ以下であることを特徴とするボンディングワイヤー。A bonding wire in which a gold fine wire having a desired diameter and a gold alloy fine wire are joined in parallel, and the longest diameter thereof is 50 μm or less. その断面が楕円形であり、その最長径が５０μｍ以下であることを特徴とするボンディングワイヤー。A bonding wire having an elliptical cross section and a longest diameter of 50 μm or less.
JP2002290227A 2002-10-02 2002-10-02 Bonding wire Expired - Fee Related JP3891282B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002290227A JP3891282B2 (en) 2002-10-02 2002-10-02 Bonding wire

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002290227A JP3891282B2 (en) 2002-10-02 2002-10-02 Bonding wire

Publications (2)

Publication Number Publication Date
JP2004128216A true JP2004128216A (en) 2004-04-22
JP3891282B2 JP3891282B2 (en) 2007-03-14

Family

ID=32282176

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002290227A Expired - Fee Related JP3891282B2 (en) 2002-10-02 2002-10-02 Bonding wire

Country Status (1)

Country Link
JP (1) JP3891282B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007324605A (en) * 2006-06-02 2007-12-13 Robert Bosch Gmbh Bonding wire for connection between contacting surfaces and bonding wire connection portion between contacting surfaces
WO2012022404A2 (en) * 2010-07-22 2012-02-23 W.C. Heraeus Gmbh & Co. Kg Core-sheath ribbon wire

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007324605A (en) * 2006-06-02 2007-12-13 Robert Bosch Gmbh Bonding wire for connection between contacting surfaces and bonding wire connection portion between contacting surfaces
WO2012022404A2 (en) * 2010-07-22 2012-02-23 W.C. Heraeus Gmbh & Co. Kg Core-sheath ribbon wire
WO2012022404A3 (en) * 2010-07-22 2012-06-28 W.C. Heraeus Gmbh & Co. Kg Core-sheath ribbon wire
JP2013531393A (en) * 2010-07-22 2013-08-01 ヘレウス マテリアルズ テクノロジー ゲーエムベーハー ウント カンパニー カーゲー Core jacket ribbon wire
US9236166B2 (en) 2010-07-22 2016-01-12 Heraeus Deutschland GmbH & Co. KG Core-jacket bonding wire
EP3425665A1 (en) * 2010-07-22 2019-01-09 Heraeus Deutschland GmbH & Co KG Method for the production of a bonding wire

Also Published As

Publication number Publication date
JP3891282B2 (en) 2007-03-14

Similar Documents

Publication Publication Date Title
TWI496900B (en) Copper alloy bonding wire for semiconductors
JP5159001B1 (en) Aluminum alloy bonding wire
JP2006324553A (en) Semiconductor device and method of manufacturing same
JPS6238414B2 (en)
TW200830511A (en) Methods and apparatus for a quad flat no-lead (QFN) package
WO2013018238A1 (en) Ball bonding wire
JP2004014884A (en) Bonding wire
TW200416915A (en) Wirebonding insulated wire
JP3527356B2 (en) Semiconductor device
JP5345162B2 (en) Bonding wire for semiconductor mounting
JP3891282B2 (en) Bonding wire
JPS58154241A (en) Electric apparatus and preparation thereof and bonding wire used thereto and preparation thereof
JPS6248373B2 (en)
JP2007019349A (en) Bonding wire
JPH1167811A (en) Gold and silver alloy thin wire for semiconductor device
JPH0332033A (en) Electronic device
JP2000150562A (en) Bonding gold alloy fine wire for semiconductor device
JP3356082B2 (en) Gold alloy wires for bonding semiconductor devices
JP3358295B2 (en) Bonding wire
WO2022163606A1 (en) Aluminum bonding wire for power semiconductor
JP4134261B1 (en) Gold alloy wire for ball bonding
JPH11274215A (en) Bonding wire for semiconductor element
JPH07122564A (en) Formation of bump
JPH10275821A (en) Gold alloy wire for bonding semiconductor device
JP4318533B2 (en) Ball bump forming ribbon

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20050304

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20060823

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20060829

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20061025

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20061115

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20061128

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

LAPS Cancellation because of no payment of annual fees