JP2004127934A - Planar light emitting device - Google Patents

Planar light emitting device Download PDF

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JP2004127934A
JP2004127934A JP2003326196A JP2003326196A JP2004127934A JP 2004127934 A JP2004127934 A JP 2004127934A JP 2003326196 A JP2003326196 A JP 2003326196A JP 2003326196 A JP2003326196 A JP 2003326196A JP 2004127934 A JP2004127934 A JP 2004127934A
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light
emitting device
light emitting
guide plate
light guide
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JP4182848B2 (en
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Ryosuke Wakagi
若木 亮輔
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Nichia Chemical Industries Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a planar light emitting device having high and uniform luminance. <P>SOLUTION: This planar light emitting device has light sources; and a light guide plate for making light of the light sources incident from a side surface to emit the light from the upper surface. The planar light emitting device is so structured that at least one of the side surfaces of the light guide plate has an uneven part; the incident surface of the light guide plate has a plurality of stepped surfaces continuing at predetermined steps from the upper surface to the bottom surface; the stepped surfaces on the upper surface side are formed so as to project in the direction of the light sources with respect to the continuing bottom surface side; and the light sources are so disposed on the respective stepped surfaces on the upper surface side and on the bottom surface side as to face the respective stepped surfaces. <P>COPYRIGHT: (C)2004,JPO

Description

 本発明は、液晶バックライト、パネルメータ、表示灯や面発光スイッチ等に用いられる面状発光装置に関する。 The present invention relates to a planar light emitting device used for a liquid crystal backlight, a panel meter, an indicator lamp, a surface light switch, and the like.

 従来、液晶バックライトなどの光源に、半導体発光素子、例えば発光ダイオード(以下、LEDという。)からの光を面状に発光させる面状発光装置が用いられている。その面状発光装置の構造の一例を図9に示す。面状発光装置100には、透光性の導光板101と、導光板101の一端面に設けられ導光板端面から光を入射させるLED102が設けられている。LED102からの光の多くは、導光板101の入射面105より導光板101中へ導かれる。また、ロスした光もリフレクタ103により反射されて導光板101の入射面105に導かれる。また、導光板101の出射面106及びLEDが対向配置されている端面を除いて反射板104が設けられており、LEDからの入射光は反射板104に反射されて出射面106から出射する。また、出射面方向へ出射する光の割合を増加させてバックライトの輝度を向上させるため、導光板と別体のプリズムシート(不図示)を出射面の上に配置したもの(例えば、特許文献1)も提案されている。
特開2002−107515号公報
Conventionally, as a light source such as a liquid crystal backlight, a planar light emitting device that emits light from a semiconductor light emitting element, for example, a light emitting diode (hereinafter, referred to as an LED) in a planar manner has been used. FIG. 9 shows an example of the structure of the planar light emitting device. The planar light-emitting device 100 includes a light-transmitting light guide plate 101 and an LED 102 provided on one end surface of the light guide plate 101 and allowing light to enter from the end surface of the light guide plate. Most of the light from the LED 102 is guided into the light guide plate 101 from the incident surface 105 of the light guide plate 101. Further, the lost light is also reflected by the reflector 103 and guided to the incident surface 105 of the light guide plate 101. In addition, a reflection plate 104 is provided except for an emission surface 106 of the light guide plate 101 and an end surface where the LEDs are arranged to face each other, and incident light from the LEDs is reflected by the reflection plate 104 and emitted from the emission surface 106. Further, a prism sheet (not shown) separate from the light guide plate is disposed on the light-exiting surface in order to increase the ratio of light emitted in the direction of the light-exiting surface to improve the brightness of the backlight (for example, see Patent Document 1). 1) has also been proposed.
JP-A-2002-107515

 しかしながら、面状発光装置の発光面積を大きくしたり、より高輝度に面発光させるため、光源であるLEDの輝度を一層向上させようとすると、以下のような問題があった。すなわち、LEDからの光は、ある一定の指向角を持ち放射状に発光する指向特性を持つ。そのため、LED近傍での発光強度が強く、LEDから離れるにしたがって発光強度が弱くなり、輝度むらが発生し易い傾向がある。特に、LED間や出射面側から見た隅部は暗くなる傾向が大きい。さらに、発光強度が数千mcdまで向上した高輝度のLEDをフルに発光させた場合、LEDチップの数を減少させ小型化できるという利点がある反面、光源となるLEDの近傍では極めて強い発光の強度分布が生じる。これに対し、導光板の出射面に対向する底面に反射パターンを設けて、入射光を導光板内で散乱・反射させて輝度を均一化する方法が考えられる。しかし、この方法だけでは、LEDの近傍での発光の強度分布を解消するのは困難である。
 また、プリズムシートを用いると、発光装置を薄型化するのが困難であり、また、部品数の増加により製造工程が複雑化するという問題もあった。
 そこで、本発明は、高輝度で輝度の均一な面状発光装置を提供することを目的とした。
However, in order to increase the light emitting area of the surface light emitting device or to perform surface light emission with higher luminance, there is a problem as described below when further increasing the luminance of the LED as a light source. That is, the light from the LED has a directional characteristic of emitting light radially at a certain directional angle. For this reason, the light emission intensity near the LED is strong, and the light emission intensity becomes weaker as the distance from the LED increases, which tends to cause uneven brightness. In particular, corners viewed between the LEDs and from the emission surface side tend to be dark. Furthermore, when a high-brightness LED whose light emission intensity has been improved to several thousand mcd is made to emit light fully, there is an advantage that the number of LED chips can be reduced and the size can be reduced. An intensity distribution results. On the other hand, a method is considered in which a reflection pattern is provided on the bottom surface of the light guide plate opposite to the emission surface, and incident light is scattered and reflected in the light guide plate to make luminance uniform. However, it is difficult to eliminate the intensity distribution of light emission in the vicinity of the LED using only this method.
In addition, when the prism sheet is used, it is difficult to reduce the thickness of the light emitting device, and there is a problem that the manufacturing process is complicated due to an increase in the number of components.
Therefore, an object of the present invention is to provide a planar light emitting device having high luminance and uniform luminance.

 上記課題を解決するため、本発明の面状発光装置は、光源と、該光源からの光を側面から入射させ反射により上面から出射させる導光板と、を有する面状発光装置であって、上記導光板の少なくとも1つの側面は、凹凸部を有し、上記導光板の入射面は、導光板の上面から底面に所定の段差で連続する複数の段面を有し、上面側の段面は連続する底面側の段面に対し上記光源の方向に突出するように形成されており、上面側の段面と底面側の段面のそれぞれに、各段面に対向するように光源を配置して成ることを特徴とする面状発光装置である。ここで、上記入射面の長手方向に沿って、上面側の段面と底面側の段面に交互に上記光源を配置することが好ましい。これにより、側面からの光の透過が抑制される。 In order to solve the above problems, a planar light emitting device of the present invention is a planar light emitting device having a light source, and a light guide plate that causes light from the light source to enter from a side surface and emit from a top surface by reflection, and At least one side surface of the light guide plate has an uneven portion, and the incident surface of the light guide plate has a plurality of step surfaces continuous from the upper surface to the bottom surface of the light guide plate at a predetermined step. A light source is arranged so as to protrude in the direction of the light source with respect to a continuous bottom surface side surface, and to each of the top surface side surface surface and the bottom surface side surface surface so as to face each step surface. This is a planar light emitting device characterized by comprising: Here, it is preferable that the light sources are alternately arranged on the step surface on the top surface and the step surface on the bottom surface along the longitudinal direction of the incident surface. Thereby, transmission of light from the side surface is suppressed.

 また、本発明の面状発光装置は、凹凸部として、連続した三角形状の断面を有する多数の突条から成るプリズム列を用いることができる。また、導光板の上面にも、凹凸部を設けることもできる。 In addition, the planar light emitting device of the present invention can use, as the concavo-convex portion, a prism row composed of a number of protrusions having a continuous triangular cross section. Also, an uneven portion can be provided on the upper surface of the light guide plate.

 また、本発明の面状発光装置は、光源が上記導光板の入射面に対向するように配置されており、入射面に、凹凸部を設けることもできる。 In addition, in the planar light emitting device of the present invention, the light source is disposed so as to face the light incident surface of the light guide plate, and the light incident surface may be provided with an uneven portion.

 本発明の面状発光装置は、導光板の少なくとも1つの側面に、凹凸部を設けるようにしたので、光源からの光が凹凸部に反射して、側面への光の透過を防止できる。これにより、反射板の数を少なくして、光の取出し効率を向上させることができる。さらに、出射面に凹凸部を設けることにより、出射方向を調整して、出射面に垂直に出射する光の割合を増やすことができるので、発光輝度を高めることができる。 In the planar light emitting device of the present invention, since the uneven portion is provided on at least one side surface of the light guide plate, light from the light source is reflected on the uneven portion, and transmission of light to the side surface can be prevented. This makes it possible to reduce the number of reflectors and improve the light extraction efficiency. Further, by providing the projections and depressions on the emission surface, the emission direction can be adjusted and the proportion of light emitted perpendicular to the emission surface can be increased, so that the emission luminance can be increased.

 以下、図面を参照して本発明の実施の形態について説明する。
(実施の形態1)
 図1は、本実施の形態に係る面状発光装置Cの構造を示す模式的な平面図、図2は側面図、そして図3は斜視図である。面状発光装置Cは、2つの光源列を側面に設けた2つの段面に配置している。
 面状発光装置Cは、透光性の導光板5と、2つの光源列1,2を有している。導光板5の入射面5cは、上面5aから底面5bに所定の段差で連続する第1の段面51cと、第2の段面52cと、を有しており、第1の段面51cは第2の段面52cに対し光源の方向に突出するように形成されている。第1の光源列1は第1の段面51cに対向するように配置され、第2の光源列2は第2の段面52cに対向するように配置されている。ここで、第1の光源列1と第2の光源列2は、それぞれ、入射面の長手方向に直線状に配置された複数のLED1aとLED2aから成り、LED1aとLED2aは、入射面の長手方向に沿って、第1の段面51cと第2の段面52cに交互に配置されている。
Hereinafter, embodiments of the present invention will be described with reference to the drawings.
(Embodiment 1)
FIG. 1 is a schematic plan view showing the structure of the planar light emitting device C according to the present embodiment, FIG. 2 is a side view, and FIG. 3 is a perspective view. The planar light emitting device C has two light source arrays arranged on two step surfaces provided on the side surfaces.
The planar light-emitting device C has a light-transmitting light guide plate 5 and two light source arrays 1 and 2. The incident surface 5c of the light guide plate 5 has a first step surface 51c and a second step surface 52c that are continuous from the upper surface 5a to the bottom surface 5b with a predetermined step, and the first step surface 51c is It is formed so as to protrude in the direction of the light source with respect to the second step surface 52c. The first light source array 1 is arranged to face the first step surface 51c, and the second light source array 2 is arranged to face the second step surface 52c. Here, the first light source row 1 and the second light source row 2 are respectively composed of a plurality of LEDs 1a and 2a arranged linearly in the longitudinal direction of the incident surface, and the LED 1a and the LED 2a are arranged in the longitudinal direction of the incident surface. Are alternately arranged on the first step surface 51c and the second step surface 52c.

 導光板5は、上面である出射面5aと、出射面5aに対向する底面5bと、側面として、LEDからの光が入射する入射面5cと、入射面5cに対向する側面5dと、入射面5cに隣接し対向する一対の側面5e,5fを有している。さらに、LEDの取付け面5g及び5g′を除く導光板5の表面全面に、図3に示すプリズム列からなる凹凸部が形成されている。 The light guide plate 5 includes an emission surface 5a as an upper surface, a bottom surface 5b facing the emission surface 5a, an incidence surface 5c on which light from the LED is incident, a side surface 5d facing the incidence surface 5c, and an incidence surface. It has a pair of side surfaces 5e and 5f which are adjacent to and opposed to 5c. Further, an uneven portion composed of a prism array shown in FIG. 3 is formed on the entire surface of the light guide plate 5 except for the LED mounting surfaces 5g and 5g '.

 本実施の形態は、側面に2つの光源を有し高輝度であるため、光源を構成するLEDの近傍では極めて強い発光の強度分布が生じる。しかし、2つの光源から導光板に入射した光は、導光板内部で反射され、一部が入射面に戻り、入射面で反射されて出射面から出射する。そのため、LED近傍の輝度ムラが解消されて、輝度の均一性を向上させることができる。特に、LED1aとLED2aを、入射面の長手方向に沿って交互に配置することにより、LEDの近傍での発光の強度分布がより均一化される結果、LED近傍の輝度ムラをより効果的に解消することができる。 In this embodiment, since two light sources are provided on the side surface and the brightness is high, an extremely strong light emission intensity distribution is generated in the vicinity of the LED constituting the light source. However, light that has entered the light guide plate from the two light sources is reflected inside the light guide plate, partly returns to the incident surface, is reflected by the incident surface, and exits from the exit surface. Therefore, the uneven brightness near the LED is eliminated, and the uniformity of the brightness can be improved. In particular, by arranging the LEDs 1a and the LEDs 2a alternately along the longitudinal direction of the incident surface, the intensity distribution of light emission in the vicinity of the LED is made more uniform, so that uneven brightness in the vicinity of the LED is more effectively eliminated. can do.

 また、側面に設けた2つの段面のそれぞれに1個以上のLEDから成る光源列を配置したので、導光板を大きくすることなく多くの光源を入射面に配置することができ、省スペースな発光装置を提供することができる。 In addition, since the light source row composed of one or more LEDs is arranged on each of the two step surfaces provided on the side surfaces, many light sources can be arranged on the incident surface without increasing the size of the light guide plate, thereby saving space. A light emitting device can be provided.

 また、第1の光源列の光源は第2の光源列の光源に比べ長い光路を有しているため、第2の光源列の光源と比べ、輝度は低くなるが、指向性が弱まり、LED間の混色性が高くなる。これに対し、第2の光源列の光源は光路が短いため、導光板の内部で反射散乱されにくくなり高輝度となる。したがって、本実施の形態の発光装置によれば、高輝度と混色性を両立させることが可能となる。
 なお、本実施の形態では、段面が2つの場合を示したが、段面を3以上にしても本実施の形態と同様の効果を得ることができる。
Further, the light source of the first light source row has a longer optical path than the light source of the second light source row, so that the brightness is lower than the light source of the second light source row, but the directivity is weakened, and The color mixing between them becomes high. On the other hand, since the light sources of the second light source row have a short optical path, they are less likely to be reflected and scattered inside the light guide plate, resulting in high brightness. Therefore, according to the light emitting device of the present embodiment, it is possible to achieve both high luminance and color mixing.
Note that, in the present embodiment, the case where there are two step surfaces is shown. However, even when the number of step surfaces is three or more, the same effect as that of the present embodiment can be obtained.

 本実施の形態によれば、側面は、反射板を用いることなく、側面への光の透過を防止できるので、光の取出し効率を向上させることができる。さらに、出射面に設けたプリズム列は出射方向を調整して、出射面に垂直に出射する光の割合が多くなるように作用する。これらにより、発光装置の輝度を向上させることができる。また、高輝度のLEDをフルに発光させた場合、光源となるLEDの近傍では極めて強い発光の強度分布が生じるが、入射面にプリズム列を設けることにより、入射面からの光の透過を防止し、LED近傍の暗部に光を導入することができるので、輝度を均一化することもできる。 According to the present embodiment, since the side surface can prevent the transmission of light to the side surface without using a reflector, the light extraction efficiency can be improved. Further, the prism array provided on the exit surface adjusts the exit direction so as to increase the proportion of light exiting perpendicular to the exit surface. Thus, the luminance of the light emitting device can be improved. In addition, when a high-brightness LED emits full light, an extremely strong emission intensity distribution is generated in the vicinity of the LED serving as a light source. By providing a prism array on the incident surface, transmission of light from the incident surface is prevented. However, since light can be introduced into a dark portion near the LED, the luminance can be made uniform.

 また、従来、反射板には、ポリエチレンテレフタレート、ポリカーボネート、そしてポリプロピレン等の樹脂に白色顔料や散乱材を含有させて成型されたシート状物が用いられているが、本実施の形態によれば、反射板の数を少なくすることができるので、発光装置をより安価に製造することも可能となる。 Further, conventionally, for the reflection plate, polyethylene terephthalate, polycarbonate, and a sheet-like material molded by containing a white pigment or a scattering material in a resin such as polypropylene is used, according to the present embodiment, Since the number of reflectors can be reduced, the light emitting device can be manufactured at lower cost.

 導光板を構成する材料としては、光透過性、成形に優れた材料、例えばポリカーボネート樹脂、アクリル樹脂、非晶性ポリオレフィン樹脂、ポリスチレン樹脂などが挙げられる。 As a material constituting the light guide plate, a material excellent in light transmittance and molding, for example, a polycarbonate resin, an acrylic resin, an amorphous polyolefin resin, a polystyrene resin and the like can be mentioned.

 所望の凹凸部を有する導光板を作製するには、例えば、射出成型法により、所望の凹凸パターンを有する金型を用いて作製することができる。凹凸部にプリズム列を用いる場合、プリズムピッチは30〜100μmが好ましい。プリズムピッチが30μmよりも小さいと、プリズム間のV字状溝の深さが浅くなり、出射面に垂直に出射する光の割合が減り、輝度が低下するからである。また、100μmよりも大きいと、反射光の割合が減り、輝度が低下するからである。
 また、第1プリズム列32のプリズムの頂角は80〜120度が好ましい。全反射を起こして反射光を増加させ、導光板の内部に光を閉じ込めることにより、出射面に垂直に出射する光の割合を多くすることができるからである。
In order to manufacture a light guide plate having a desired uneven portion, the light guide plate can be manufactured by, for example, an injection molding method using a mold having a desired uneven pattern. When a prism row is used for the uneven portion, the prism pitch is preferably 30 to 100 μm. If the prism pitch is smaller than 30 μm, the depth of the V-shaped groove between the prisms becomes shallow, the proportion of light emitted perpendicular to the exit surface decreases, and the luminance decreases. On the other hand, if it is larger than 100 μm, the ratio of the reflected light decreases, and the luminance decreases.
Further, the apex angle of the prisms of the first prism row 32 is preferably 80 to 120 degrees. This is because, by causing total reflection and increasing the reflected light and confining the light inside the light guide plate, it is possible to increase the proportion of light emitted perpendicularly to the exit surface.

 また、導光板には拡散剤を含有させてさらに均一発光とさせることもできるし、着色剤を含有させて所望の発光色が発光可能な構成としても良い。導光板中に拡散剤や着色顔料を均一分散させても良いし、傾斜分布させても良い。拡散剤の材料には、アクリル樹脂、ポリカーボネート樹脂、非晶性ポリオレフィン樹脂、ポリメチレンペンテン樹脂などが挙げられる。着色剤には、種々の顔料や染料を用いることができる。また、蛍光染料や蛍光顔料を用いることもできる。 Further, the light guide plate may contain a diffusing agent for more uniform light emission, or may contain a coloring agent to emit light of a desired emission color. A diffusing agent or a coloring pigment may be uniformly dispersed in the light guide plate, or may be inclinedly distributed. Examples of the material of the diffusing agent include an acrylic resin, a polycarbonate resin, an amorphous polyolefin resin, and a polymethylenepentene resin. Various pigments and dyes can be used as the colorant. Further, a fluorescent dye or a fluorescent pigment can also be used.

 また、Al,Ag,Cu等の反射率の高い金属膜を導光板の底面上にスパッタリングや真空蒸着法により形成することもできる。これにより、底面の反射率を高めて、光の取出し効率をさらに向上させることができる。 金属 Alternatively, a metal film having high reflectivity such as Al, Ag, and Cu can be formed on the bottom surface of the light guide plate by sputtering or vacuum evaporation. Thereby, the reflectance of the bottom surface can be increased, and the light extraction efficiency can be further improved.

 本発明においては光源として、電球、蛍光灯、レーザダイオード等、他のいかなる発光体を使用することができる。本発明の光源として用いることができる発光ダイオードは、導光板に光を効率良く導入可能な物であれば種々利用することができる。発光ダイオードはSMD(表面発光型)発光ダイオードでも、砲弾型発光ダイオードでも良い。また、発光素子であるLEDチップそのものでも良い。 に お い て In the present invention, any other light emitter such as a light bulb, a fluorescent lamp, a laser diode, etc. can be used as the light source. Various light emitting diodes that can be used as the light source of the present invention can be used as long as light can be efficiently introduced into the light guide plate. The light emitting diode may be an SMD (surface emitting type) light emitting diode or a shell type light emitting diode. Further, the LED chip itself, which is a light emitting element, may be used.

 また、発光素子の材料として、BN、SiC、ZnSe、GaN、InGaN、InAlGaN、AlGaN、BAlGaN、BInAlGaNなど種々の半導体を挙げることができる。同様に、これらの元素に不純物元素としてSiやZnなどを含有させ発光中心とすることもできる。半導体の構造としては、MIS接合、PIN接合やpn接合などを有するホモ構造、ヘテロ構造あるいはダブルへテロ構造のものを好適に挙げることができる。半導体層の材料やその混晶比によって発光波長を種々選択することができる。また、半導体層を量子効果が生じる薄膜に形成させた単一量子井戸構造や多重量子井戸構造とすることでより出力を向上させることもできる。 Further, as a material of the light emitting element, various semiconductors such as BN, SiC, ZnSe, GaN, InGaN, InAlGaN, AlGaN, BAlGaN, and BInAlGaN can be given. Similarly, these elements may contain Si, Zn, or the like as an impurity element to serve as a light emission center. As the semiconductor structure, a homo structure, a hetero structure, or a double hetero structure having a MIS junction, a PIN junction, a pn junction, or the like can be preferably exemplified. Various emission wavelengths can be selected depending on the material of the semiconductor layer and its mixed crystal ratio. The output can be further improved by using a single quantum well structure or a multiple quantum well structure in which the semiconductor layer is formed as a thin film in which a quantum effect occurs.

 また、発光素子は、2個以上用いることができるし2種類以上利用することもできる。2種類以上利用する場合、発光色の混色により種々の発光色を得ることができる。発光素子をRGB(赤、緑、青)あるいは、BY(青、黄)とし全て発光させ混色することにより白色発光させることができる。 In addition, two or more light emitting elements can be used, and two or more light emitting elements can be used. When two or more types are used, various emission colors can be obtained by mixing the emission colors. White light can be emitted by mixing all the light emitting elements with RGB (red, green, blue) or BY (blue, yellow).

 また、蛍光体と組合せて白色発光可能な発光素子としては、青色発光可能な窒化物系半導体(InAlGa1−x−yN、0≦X、0≦Y、X+Y≦1)を用いた発光素子を好適に用いることができ、この場合、蛍光体にはYAG:Ce蛍光体やぺリレン系誘導体を用いることが好ましい。また、紫外線を発光する発光素子の場合、少なくともMn及び/又はClを含むEuで付活されたアルカリ土類金属ハロゲンアパタイト蛍光体等を挙げることができる。 As the white light emitting capable emitting element in combination with a phosphor, a blue light emission can be a nitride-based semiconductor (In x Al y Ga 1- x-y N, 0 ≦ X, 0 ≦ Y, X + Y ≦ 1) The used light emitting element can be suitably used. In this case, it is preferable to use a YAG: Ce phosphor or a perylene derivative as the phosphor. In the case of a light-emitting element that emits ultraviolet light, an alkaline earth metal halogen apatite phosphor activated with Eu containing at least Mn and / or Cl can be used.

 窒化物半導体を使用した場合、半導体基板にはサファイヤ、スピネル、SiC、Si、ZnO、GaAs、GaN等を好適に用いることができる。結晶性の良い窒化物半導体を量産性良く形成するためには、サファイヤ基板を用いることが好ましい。このサファイヤ基板上に、HVPE法やMOCVD法などを用いて窒化物半導体を形成させることができる。サファイヤ基板上に、低温成長により非単結晶となるGaN、AlN、GaAlN等のバッファ層を形成し、その上にpn接合を有する窒化物半導体を形成させる。 場合 When a nitride semiconductor is used, sapphire, spinel, SiC, Si, ZnO, GaAs, GaN, or the like can be suitably used for the semiconductor substrate. In order to form a nitride semiconductor with good crystallinity with high productivity, it is preferable to use a sapphire substrate. A nitride semiconductor can be formed on the sapphire substrate by using the HVPE method, the MOCVD method, or the like. On a sapphire substrate, a buffer layer made of non-single crystal such as GaN, AlN, and GaAlN is formed by low-temperature growth, and a nitride semiconductor having a pn junction is formed thereon.

 窒化物半導体を使用したpn接合を有する紫外領域を効率良く発光可能な発光素子の例として、バッファ層上に、サファイヤ基板のオリフラ面と概ね垂直にSiOをストライプ状に形成する。ストライプ上にHVPE法を用いてGaNをELOG(Epitaxial Lateral Over Growth)成長させる。続いて、MOCVD法により、n型窒化ガリウムで形成した第1のコンタクト層、n型窒化アルミニウム・ガリウムで形成させた第1のクラッド層、窒化インジウム・アルミニウム・ガリウムの井戸層と窒化アルミニウム・ガリウムの障壁層を複数積層させた多重量子井戸構造とされる活性層、p型窒化ガリウムで形成した第2のコンタクト層を順に積層させたダブルへテロ構造などの構造を挙げることができる。 As an example of a light emitting element that can efficiently emit light in an ultraviolet region having a pn junction using a nitride semiconductor, SiO 2 is formed on a buffer layer in a stripe shape substantially perpendicular to the orientation flat surface of a sapphire substrate. GaN is grown on the stripe by ELOG (Epitaxial Lateral Over Growth) using HVPE. Subsequently, a first contact layer formed of n-type gallium nitride, a first cladding layer formed of n-type aluminum gallium nitride, a well layer of indium aluminum gallium nitride and aluminum gallium nitride are formed by MOCVD. , An active layer having a multiple quantum well structure in which a plurality of barrier layers are stacked, and a double hetero structure in which a second contact layer formed of p-type gallium nitride is sequentially stacked.

 窒化物半導体は、不純物をドープしない状態でn型導電性を示す。発光効率を向上させるなど所望のn型窒化物半導体を形成させる場合は、n型ドーパントとして、Si、Ge、Se、Te、C等を適宜導入することが好ましい。一方、p型窒化物半導体を形成する場合、p型ドーパントであるZn、Mg、Be、Ca、Sr、Ba等をドープすることが好ましい。窒化物半導体は、p型ドーパントをドープしただけではp型化しにくいため、p型ドーパント導入後に、炉による加熱やプラズマ照射等により低抵抗化することが好ましい。第1のコンタクト層の表面までp型側からエッチングして各コンタクト層を露出させる。各コンタクト層上にそれぞれ電極形成後、半導体ウェハからチップ状にカットさせることで窒化物半導体からなる発光素子を作製することができる。 Nitride semiconductor shows n-type conductivity without doping impurities. When a desired n-type nitride semiconductor is formed, for example, to improve luminous efficiency, it is preferable to appropriately introduce Si, Ge, Se, Te, C, or the like as an n-type dopant. On the other hand, when forming a p-type nitride semiconductor, it is preferable to dope a p-type dopant such as Zn, Mg, Be, Ca, Sr, and Ba. Since it is difficult to make a nitride semiconductor p-type only by doping it with a p-type dopant, it is preferable to lower the resistance by introducing a p-type dopant by heating in a furnace or irradiating plasma. Each contact layer is exposed by etching from the p-type side up to the surface of the first contact layer. After the electrodes are formed on the respective contact layers, the semiconductor wafer is cut into chips to form a light emitting element made of a nitride semiconductor.

 本発明の面状発光装置は、発光素子からの光をそのまま面状に発光させる他に、色変換部材により発光素子からの光を種々の色に変換させて面状に発光させることもできる。色変換部材は、種々の形態をとることができ、例えば、導光板の入射面に蛍光体を含む塗膜を形成しても良く、また、蛍光体を保持したシートを導光板の出射面上に配置することもできる。具体的な色変換部材としては、発光素子からの光に対して光透過率が70%以上のシート状ベースフィルムに蛍光体を含有させた樹脂をロールコータ等を用いて塗布することにより形成することができる。このようなベースフィルムとしては、透光性や耐熱性の高いポリカーボネートフィルムやポリエステルフィルムが好適に挙げられる。ベースフィルムは、より発光均一性を向上させるため、屈折性の微粒子樹脂ビーズや透光性無機微
粒子をコーティングしたもの、さらには上記のフィルムをエンボス加工したものを好適に用いることができる。また、蛍光体とともに白色顔料を含有させてより均一な白色表示を得ることもできる。
The planar light emitting device of the present invention can emit light from a light emitting element into various colors by a color conversion member, and emit light in a planar manner, in addition to emitting light from the light emitting element in a planar state. The color conversion member can take various forms, for example, a coating film containing a phosphor may be formed on the light incident surface of the light guide plate, and a sheet holding the phosphor may be formed on the light exit surface of the light guide plate. Can also be placed. A specific color conversion member is formed by applying a resin containing a phosphor to a sheet-like base film having a light transmittance of 70% or more with respect to light from the light emitting element using a roll coater or the like. be able to. As such a base film, a polycarbonate film or a polyester film having high translucency and heat resistance are preferably exemplified. As the base film, in order to further improve the uniformity of light emission, a film coated with refractive fine resin beads or translucent inorganic fine particles, and a film obtained by embossing the above film can be suitably used. Further, a more uniform white display can be obtained by containing a white pigment together with the phosphor.

 色変換部材に含有させる蛍光体には、前述の蛍光体を用いることができる。すなわち、青色発光可能な窒化物系半導体(InAlGa1−x−yN、0≦X、0≦Y、X+Y≦1)を用いた発光素子の場合、蛍光体にはYAG:Ce蛍光体やぺリレン系誘導体を用いることが好ましい。また、紫外線を発光する発光素子の場合、少なくともMn及び/又はClを含むEuで付活されたアルカリ土類金属ハロゲンアパタイト蛍光体等を用いることが好ましい。 The above-described phosphor can be used as the phosphor contained in the color conversion member. That is, in the case of the light emitting device using a blue light emitting capable nitride semiconductor (In x Al y Ga 1- x-y N, 0 ≦ X, 0 ≦ Y, X + Y ≦ 1), YAG is the phosphor: Ce It is preferable to use a phosphor or a perylene derivative. In the case of a light-emitting element that emits ultraviolet light, it is preferable to use an alkaline earth metal halogen apatite phosphor activated with Eu containing at least Mn and / or Cl.

 なお、上述した実施の形態1では、LEDの取付け面面5g及び5g′に対して凹凸部を形成することはなかったが、LEDの取付け面面5g及び5g′に対して他の面と同様に凹凸部を形成しても構わない。このようにLEDの取付け面5g及び5g′に対して凹凸部を形成することによって、LEDの近傍での発光の強度分布を効果的に解消することが可能である。 In the above-described first embodiment, no irregularities were formed on the LED mounting surface surfaces 5g and 5g '. However, the LED mounting surface surfaces 5g and 5g' were the same as the other surfaces. An uneven portion may be formed on the surface. By forming the concave and convex portions on the mounting surfaces 5g and 5g 'of the LED as described above, it is possible to effectively eliminate the intensity distribution of light emission in the vicinity of the LED.

 また、実施の形態では、図3に示した形状のプリズム列を用いているが、本発明に用いる凹凸部は、図3に示す形状のプリズム列に限定されない。例えば、以下に示すような変形例が可能である。 Also, in the embodiment, the prism rows having the shape shown in FIG. 3 are used, but the uneven portions used in the present invention are not limited to the prism rows having the shape shown in FIG. For example, the following modifications are possible.

(変形例1)
 図4は、本変形例の凹凸部の形状を示す模式図であり、実施の形態1の面状発光装置に適用した例を示している。本変形例の凹凸部はプリズム列であって、所定のプリズムピッチで形成された第1プリズム列32と、第1プリズム列の互いに隣接する2つのプリズムの間に形成された1以上のプリズムからなる第2プリズム列33とを有し、第2プリズム列33のプリズムの断面積が第1プリズム列32のプリズムの断面積よりも小さくなるように形成されている。
(Modification 1)
FIG. 4 is a schematic diagram showing the shape of the uneven portion according to this modification, and shows an example in which the present invention is applied to the planar light emitting device of the first embodiment. The concavo-convex portion of the present modified example is a prism row, and includes a first prism row 32 formed at a predetermined prism pitch and one or more prisms formed between two adjacent prisms of the first prism row. And the second prism row 33 is formed such that the cross-sectional area of the prisms of the second prism row 33 is smaller than the cross-sectional area of the prisms of the first prism row 32.

 断面積の異なるプリズムから成る2種のプリズム列を形成することにより、反射光を増加させて、出射面に垂直に出射する光の割合を多くすることができる。
 図7は、本変形例の凹凸部の模式拡大図である。前述のように、第1プリズム列のプリズムピッチは30〜100μmが好ましく、また、第1プリズム列32のプリズムの頂角は80〜120度が好ましい。
 また、第2プリズム列33のプリズムピッチは5〜20μm、ピッチ方向の幅は15〜60μmが好ましい。
 また、プリズムの頂角は80〜120度が好ましい。全反射を起こして反射光を増加させ、導光板の内部に光を閉じ込めることにより、出射面に垂直に出射する光の割合を多くすることができるからである。
By forming two types of prism rows each including a prism having a different cross-sectional area, it is possible to increase reflected light and increase the proportion of light emitted perpendicular to the exit surface.
FIG. 7 is a schematic enlarged view of the uneven portion according to the present modification. As described above, the prism pitch of the first prism row is preferably 30 to 100 μm, and the apex angle of the prisms of the first prism row 32 is preferably 80 to 120 degrees.
The prism pitch of the second prism row 33 is preferably 5 to 20 μm, and the width in the pitch direction is preferably 15 to 60 μm.
The vertex angle of the prism is preferably 80 to 120 degrees. This is because, by causing total reflection and increasing the reflected light and confining the light inside the light guide plate, it is possible to increase the proportion of light emitted perpendicularly to the exit surface.

(変形例2)
 図5は、本変形例の凹凸部の形状を示す模式図であり、実施の形態1の面状発光装置に適用した例を示している。本変形例の凹凸部はプリズム列であって、連続した三角形状の断面を有する多数の第2の突条34aから成るプリズム列を表面に有する第1の突条34が所定のピッチで連続して形成されている。
 第2の突条の表面に微細な第1の突条を形成することにより、反射光を増加させ、導光板の内部に光を閉じ込めることにより、出射面に垂直に出射する光の割合を多くすることができる。
(Modification 2)
FIG. 5 is a schematic diagram showing the shape of the uneven portion according to this modification, and shows an example in which the present invention is applied to the planar light emitting device of the first embodiment. The uneven portion of this modification is a prism row, and a first ridge 34 having a prism row composed of a large number of second ridges 34a having a continuous triangular cross section on the surface is continuous at a predetermined pitch. It is formed.
By forming a fine first ridge on the surface of the second ridge, reflected light is increased, and light is confined inside the light guide plate, thereby increasing the proportion of light emitted perpendicular to the emission surface. can do.

(変形例3)
 図6は、本変形例の凹凸部の形状を示す模式図であり、実施の形態1の面状発光装置に適用した例を示している。本変形例の凹凸部は、断面三角形状のプリズム列に代えて、ピラミッド形状部35が上下左右に連続して配置されている。
 プリズム列を用いた場合と同様に、光源からの光はピラミッド形状部に反射して反射光を増加させ、出射面に垂直に出射する光の割合を多くすることができる。
(Modification 3)
FIG. 6 is a schematic diagram showing the shape of the uneven portion according to this modification, and shows an example in which the present invention is applied to the planar light emitting device of the first embodiment. In the concavo-convex portion of the present modified example, a pyramid-shaped portion 35 is continuously arranged vertically and horizontally instead of a prism array having a triangular cross section.
As in the case of using the prism array, the light from the light source is reflected on the pyramid-shaped portion to increase the reflected light, and the proportion of the light emitted perpendicular to the emission surface can be increased.

 ここで、図8の模式拡大図に示すように、ピラミッド形状部35の底面は正方形状であって、1辺の長さは10〜100μmが好ましい。1辺の長さ10μmよりも小さいと、ピラミッド形状部間のV字状溝の深さが浅くなり、出射面に垂直に出射する光の割合が減り、輝度が低下するからである。また、100μmよりも大きいと、反射光の割合が減り、輝度が低下するからである。プリズム35の対向する傾斜面の交差する角度が80〜120度であることが好ましい。反射光を増加させて、出射面に垂直に出射する光の割合を多くすることができるからである。なお、ピラミッド形状部35は、導光板3の内部方向に凸でも、導光板3の外部方向に凸でも構わない。 Here, as shown in the schematic enlarged view of FIG. 8, the bottom surface of the pyramid-shaped portion 35 has a square shape, and the length of one side is preferably 10 to 100 μm. If the length of one side is smaller than 10 μm, the depth of the V-shaped groove between the pyramid-shaped portions becomes shallow, the proportion of light emitted perpendicular to the exit surface decreases, and the luminance decreases. On the other hand, if it is larger than 100 μm, the ratio of the reflected light decreases, and the luminance decreases. It is preferable that the angle at which the opposing inclined surfaces of the prism 35 intersect is 80 to 120 degrees. This is because reflected light can be increased to increase the proportion of light emitted perpendicular to the exit surface. Note that the pyramid-shaped portion 35 may be convex in the inner direction of the light guide plate 3 or convex in the outer direction of the light guide plate 3.

本発明の実施の形態1に係る面状発光装置の構造を示す模式的な平面図である。FIG. 2 is a schematic plan view showing the structure of the planar light emitting device according to Embodiment 1 of the present invention. 本発明の実施の形態1に係る面状発光装置の構造を示す模式的な側面図である。FIG. 2 is a schematic side view showing the structure of the planar light emitting device according to Embodiment 1 of the present invention. 本発明の実施の形態1に係る面状発光装置の構造を示す模式図であり、一部拡大図を含む斜視図である。FIG. 2 is a schematic view showing a structure of the planar light emitting device according to Embodiment 1 of the present invention, and is a perspective view including a partially enlarged view. 本発明の変形例1に係る面状発光装置の構造を示す模式図であり、一部拡大図を含む斜視図である。It is a schematic diagram which shows the structure of the planar light-emitting device which concerns on the modification 1 of this invention, and is a perspective view including a partially enlarged view. 本発明の変形例2に係る面状発光装置の構造を示す模式図であり、一部拡大図を含む斜視図である。It is a schematic diagram which shows the structure of the planar light-emitting device which concerns on the modification 2 of this invention, and is a perspective view including a partially enlarged view. 本発明の変形例3に係る面状発光装置の構造を示す模式図であり、一部拡大図を含む斜視図である。It is a schematic diagram which shows the structure of the planar light-emitting device which concerns on the modification 3 of this invention, and is a perspective view including a partially enlarged view. 本発明の変形例1に係る面状発光装置の表面形状を示す模式的な拡大図である。It is a typical enlarged view showing the surface shape of the surface light emitting device concerning modification 1 of the present invention. 本発明の変形例3に係る面状発光装置の表面形状を示す模式的な拡大図である。It is a typical enlarged view showing the surface shape of the surface light emitting device concerning modification 3 of the present invention. 従来の面状発光装置の構造を示す模式断面図である。It is a schematic cross section which shows the structure of the conventional planar light emitting device.

符号の説明Explanation of reference numerals

 1,2      光源列、
 1a,2a    発光素子、
 5        導光板、
 5a       上面(出射面)、
 5b       底面、
 5c       側面(入射面)、
 5d,5e,5f 側面、
 5g,5g′   取付け面、
 32       第1プリズム列、
 33       第2プリズム列、
 34       第1の突条、
 34a      第2の突条、
 35       ピラミッド形状部、
 51c      第1の段面、
 52c      第2の段面、
 C        面状発光装置。


1, 2 light source rows,
1a, 2a light emitting element,
5 light guide plate,
5a top surface (emission surface),
5b bottom,
5c side surface (incident surface),
5d, 5e, 5f side,
5g, 5g 'mounting surface,
32 first prism row,
33 second prism row,
34 First ridge,
34a second ridge,
35 pyramid-shaped part,
51c first step surface,
52c second step surface,
C Planar light emitting device.


Claims (5)

 光源と、該光源からの光を側面から入射させ反射により上面から出射させる導光板と、を有する面状発光装置であって、
 上記導光板の少なくとも1つの側面は、凹凸部を有し、
 上記導光板の入射面は、導光板の上面から底面に所定の段差で連続する複数の段面を有し、上面側の段面は連続する底面側の段面に対し上記光源の方向に突出するように形成されており、上面側の段面と底面側の段面のそれぞれに、各段面に対向するように光源を配置して成ることを特徴とする面状発光装置。
A planar light emitting device having a light source and a light guide plate that causes light from the light source to enter the side surface and emit from the upper surface by reflection,
At least one side surface of the light guide plate has an uneven portion,
The incident surface of the light guide plate has a plurality of step surfaces that are continuous with a predetermined step from the top surface to the bottom surface of the light guide plate, and the step surface on the top surface projects in the direction of the light source with respect to the continuous step surface on the bottom surface. A planar light emitting device comprising: a light source disposed on each of a top surface side and a bottom surface side so as to face each step surface.
 上記入射面の長手方向に沿って、上面側の段面と底面側の段面に交互に上記光源を配置して成る請求項1記載の面状発光装置。 The planar light emitting device according to claim 1, wherein the light sources are alternately arranged on a step surface on the upper surface side and a step surface on the bottom surface side along the longitudinal direction of the incident surface.  上記凹凸部が、連続した三角形状の断面を有する多数の突条から成るプリズム列である請求項1又は2に記載の面状発光装置。 (3) The planar light emitting device according to (1) or (2), wherein the uneven portion is a prism row including a number of protrusions having a continuous triangular cross section.  上記導光板の上面に、上記凹凸部を設けて成る請求項1又は3に記載の面状発光装置。 4. The planar light emitting device according to claim 1, wherein the uneven portion is provided on an upper surface of the light guide plate.  上記光源は上記導光板の入射面に対向するように配置されており、上記入射面に、上記凹凸部を設けて成る請求項1から4のいずれか一つに記載の面状発光装置。


The planar light emitting device according to any one of claims 1 to 4, wherein the light source is disposed so as to face an incident surface of the light guide plate, and the uneven surface is provided on the incident surface.


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JP2006066399A (en) * 2004-08-27 2006-03-09 Osram Opto Semiconductors Gmbh Illuminating means and primary optical element
WO2008149566A1 (en) * 2007-06-06 2008-12-11 Sharp Kabushiki Kaisha Backlight unit and liquid crystal display
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WO2010004801A1 (en) * 2008-07-07 2010-01-14 シャープ株式会社 Lighting device and liquid crystal display device
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KR20130121430A (en) * 2012-04-27 2013-11-06 엘지전자 주식회사 Display module and mobile terminal having it
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JP2015050142A (en) * 2013-09-04 2015-03-16 久豊技研株式会社 Member for light emitting device, light emitting device and display device

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