JP2004119731A - Fuse circuit in hybrid integrated circuit device - Google Patents

Fuse circuit in hybrid integrated circuit device Download PDF

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Publication number
JP2004119731A
JP2004119731A JP2002281890A JP2002281890A JP2004119731A JP 2004119731 A JP2004119731 A JP 2004119731A JP 2002281890 A JP2002281890 A JP 2002281890A JP 2002281890 A JP2002281890 A JP 2002281890A JP 2004119731 A JP2004119731 A JP 2004119731A
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Japan
Prior art keywords
conductive pattern
bare chip
bonding pad
thin metal
wire
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JP2002281890A
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JP4093835B2 (en
Inventor
Hiroshi Tamura
田村　寛
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Sanyo Electric Co Ltd
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Sanyo Electric Co Ltd
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Publication of JP2004119731A publication Critical patent/JP2004119731A/en
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Publication of JP4093835B2 publication Critical patent/JP4093835B2/en
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a fuse function without installing a special fuse circuit. <P>SOLUTION: This fuse circuit in a hybrid integrated circuit device comprises a bare chip 40 mounted on a die bonding pad 33A, thin metal wires 42A for connecting electrodes 41A of the bare chip 40 to wire bonding pads 31A and an auxiliary conductive pattern 37 arranged between a conductive pattern to be an earth terminal 42F and the earth, and the conductive pattern to be the earth terminal and the auxiliary conductive pattern are connected to each other with a thinner metal wire 43 which blows with a fusing current smaller than that in the thin metal wire used for connecting the bare chip to the conductive pattern. <P>COPYRIGHT: (C)2004,JPO

Description

【０００１】
【発明の属する技術分野】
本発明は回路素子と電極となる導電パターンを接続する金属細線を用いてヒューズ回路を構成した混成集積回路のヒューズ回路に関する。
【０００２】
【従来の技術】
最近特に、携帯用のコンピュータあるいはプリンター等の電子機器に使用される半導体回路装置は小型化、薄型化及び軽量化が一段と求められている。そのため半導体回路装置として、半導体基板に半導体素子を取付け、その半導体基板を絶縁樹脂でモールドしたパッケージ型半導体装置がある。
【０００３】
図４は従来のパッケージ型半導体装置である。パッケージ型半導体装置は基板１上に形成したダイボンディングパッド２にＬＳＩ等のベアチップ３を取付け、そのベアチップ３の電極４、４とリード端子５、５を金属細線６、６で接続する。さらにリード端子５、５をプリント基板７に印刷したプリント配線８、８にハンダ付して取付ける。
【０００４】
そして基板１及びベアチップ３の周囲を絶縁性樹脂層９で被覆している。このパッケージ型半導体装置は、リード端子５、５が絶縁性樹脂層９から外部に露出されているため、全体のサイズが大きく、小型化、薄型化および軽量化に難点がある。
【０００５】
図５及び図６は前述したパッケージ型半導体装置を改良した混成集積回路装置の一部分の平面図及び断面図である。
【０００６】
ＩＣあるいはＬＳＩの回路素子のベアチップ１０を導電パターン１１上に形成したダイボンディングパッド１１Ａに取付ける。ＬＳＩ等のベアチップ１０の電極１３Ａ１、１３Ａ２、１３Ａ３・・・１３Ａ７・・・は導電パターン１４Ａ１、１４Ａ７・・・に設けられたワイヤーボンデイングパッド１５Ａ１・・・１５Ａ７・・・にボンディングされた金属細線１６Ａ１、１６２Ａ２・・・１６Ａ７・・・でもって接続されている。
【０００７】
図６（Ａ）に示すように、前述の状態では導電パターン１１、１４Ａ１・・・１４Ａ７・・・は分離溝１８Ａ、１８Ｂ・・・で上部は電気的に分離されているが、下部はまだ連続されている。
【０００８】
導電パターン１１と導電パターン１４Ａ１・・・１４Ａ７・・・、導電パターン１１に取付けられたベアチップ１０および金属細線１６Ａ１・・・１６Ａ７・・・を絶縁性樹脂２０でモールドし全体を被覆すると共に一体に固定する。然る後導電パターン１１と導電パターン１４Ａ１・・・１４Ａ７・・・の下部の連続する部分を絶縁性樹脂２０と共に点線で示すように切断し、導電パターン１１と導電パターン１４Ａ１・・・１４Ａ７・・・を完全に電気的に分離する。
【０００９】
図６（Ｂ）のごとく、導電パターン１１、１４Ａ１・・・１４Ａ７・・・の下面に於いては、絶縁性樹脂２０から露出する形になる。導電パターン１１、１４Ａ１、１４Ａ２・・・の露出部分は外部との電気的・熱的な接続を行うために、半田等を設けて外部電極２１Ａ・・・２１Ａ７・・・及び電極２２が形成される。さらに、導電パターン１１、１４Ａ１・・・１４Ａ７・・・の外部電極を設けない個所は、導電パターンの保護等を目的としてレジスト２３により被覆し、混成集積回路装置を形成している。
【００１０】
前述のようにして形成した混成集積回路は外部電極２１Ａ・・・２１Ａ７・・・、２２を印刷基板に必要な配線を施された印刷配線に直接接合し、モータ回路等を構成する。
【００１１】
【特許文献１】
特開平０４−１６２６９１
【００１２】
【発明が解決しようとする課題】
一般にモータ回路等の大きな電流が流れる混成集積回路では回路ではヒューズを設ける。
【００１３】
しかし前述したように、上部は分離しているが下部は連続する導電パターンにＩＣあるいはＬＳＩ等のベアチップおよびチップ抵抗及びチップコンデンサ等を取付け、且つボンディングされた金属細線でベアチップの電極と導電パターンに設けたワイヤーボンディングパッドを接続する。然る後絶縁性樹脂でモールドした後前記導電パターンの下部連続する部分を切断し、基板を用いることなく作成した混成集積回路においては、薄型化、小型化及び安価が要求されるため、前述したヒューズ回路を設けることは不適当である。
【００１４】
【課題を解決するための手段】
本発明は特別なヒューズ回路を設けることなくヒューズ機能を持たせた混成集積装置で、分離溝で分離され、ベアチップが載置されるダイボンディングパッド及びワイヤーボンディングパッドが設けられた複数の導電パターンと、前記ダイボンディングパッドに載置されたベアチップと、前記ベアチップの電極とワイヤーボンディングパッドとを接続する金属細線と、アース端子となる前記一の導電パターンとアース間に設けられた補助導電パターンとよりなり、前記アース端子となる導電パターンと補助導電パターン間をベアチップと導電パターンを接続する金属細線より小電流で溶断する金属細線で接続した混成集積装置のヒューズ回路を提供する。
【００１５】
また分離溝で分離され、ベアチップが載置されるダイボンディングパッド及びワイヤーボンディングパッドが設けられた複数の導電パターンと、前記ダイボンディングパッドに載置されたベアチップと、前記ベアチップの電極とワイヤーボンディングパッドとを接続する金属細線と、電源端子となる一の導電パターンと電源間に設けられた補助導電パターンとよりなり、前記電源端子となる導電パターンと補助導電パターン間をベアチップと導電パターンを接続する金属細線より小電流で溶断する金属細線で接続した混成集積装置のヒューズ回路を提供する。
【００１６】
本発明は前記金属細線は金線であり、ベアチップの電極とワイヤーボンディングパッドとを直径３８μｍの金線で接続し、前記電源端子用の導電パターンと補助導電パターン間を直径２３μｍの金線で接続した混成集積装置のヒューズ回路を提供する。
【００１７】
【発明の実施の形態】
本発明の混成集積装置のヒューズ回路を図１〜図３に従って説明する。
【００１８】
図１及び図２は本発明の混成集積装置のヒューズ回路の平面図及び断面図である。
【００１９】
ワイヤーボンディングパッド３１Ａ・・３１Ｆ・・を上部に形成した多くの導電パターン３２Ａ・・３２Ｆ・・とダイボンディングパッド３３Ａ等を形成した導電パターン３４Ａ及びワイヤーボンディングパッド３５Ａを形成したアース端子となる導電パターン３５さらにワイヤーボンディングパッド３７Ａを形成した補助導電パターン３７を有する。導電パターン３２Ａ・・３２Ｆ・・とアース端子となる導電パターン３５さらに補助導電パターン３７とは図２（Ａ）に示すように上部は分離溝３６、３６で電気的に分離されているが、下部は連続されている。
【００２０】
導電パターン３４Ａに形成されたダイボンディングパッド３３Ａにはモータ回路のコントロールを行うＬＳＩのベアチップ４０が取付けられている。ベアチップ４０の各電極４１Ａ、４１Ｂ・・４１Ｆ・・・等と導電パターン３２Ａ・・・３２Ｆ・・・に形成されたワイヤーボンディングパッド３１Ａ、３１Ｂ・・・３１Ｆ・・・はワイヤーボンディングされた金属細線４２Ａ、４２Ｂ・・・４２Ｆ・・・で接続される。
【００２１】
ベアチップ４０の電極４１Ａと金属細線４２Ａで接続されたワイヤーボンディングパッド３１Ａはアース端子となる導電パターン３５に形成されたワイヤーボンディングパッド３５Ａとワイヤーボンディングされた金属細線４２Ｔで接続されている。
【００２２】
さらに導電パターン３５のワイヤーボンディングパッド３５Ａは補助導電パターン３７に設けられたワイヤーボンディングパッド３７Ａと金属細線４２Ａ、４２Ｂ・・・４２Ｆ・・・より径を小さくし溶断電流を小さくしたヒューズとなる金属細線４３で接続されている。本実施例では金属細線４２Ａ、４２Ｂ・・・４２Ｆ・・・４２Ｔ・・・は直径３８μｍの金線が使用され、ヒューズとなる金属細線４３は直径２３μｍの金線が使用さている。
【００２３】
モータ制御用のＩＣのベアチップ４４は同じく他のダイボンディングパッドに取り付けられ、各電極４５Ａ・・・は金属細線４２Ｇ・・・でワイヤーボンディングパッド３１Ｇ・・・に接続されている。同様に入力トランジスタのベアチップ４６はダイボンディングパッドに取り付けられ、電極４７Ａ・・・は金属細線４２Ｒ・・・で各ワイヤーボンディングパッド３１Ｒ・に接続されている。さらにチップ抵抗４８Ａ、４８Ｂ・・・の電極がダイボンディングパッド３３Ｂ、３３Ｃ・・・に直接取付けられている。
【００２４】
ダイボンディングパッド３３ＡにＬＳＩのベアチップ４０を取付け、ベアチップ４０の各電極３１Ａ、３１Ｂ・・・３１Ｆ・・・と導電パターン３２Ａ・・・３２Ｆ等を金属細線４２Ａ、４２Ｂ・・・４２Ｆ・・・で接続する等して、各回路素子を取付けると共に電気的接続した後、これら回路素子、導電パターン及び金属細線を絶縁性樹脂５０でモールドし固定する。
【００２５】
回路素子、導電パターン及び金属細線を絶縁性樹脂２０でモールドし固定した後、図２（Ａ）に示す点線で導電パターン３２Ａ、３２Ｆ、３５、３７・・・を絶縁性樹脂５０と共に切断する。図２（Ｂ）のごとく、この状態では導電パターン３２Ａ、３２Ｆ、３５、３７・・・の下端は外部に露出されているので、露出されている部分に半田でもって外部電極４９Ａ、４９Ｂ、４９Ｃ・・・４９Ｅを形成する。そして導電パターン３２Ａ、３２Ｆ、３５、３７・・・の残りの露出部分をレジスト５０・・で被覆することにより混成集積装置５１が完成する。
【００２６】
前述のようにして形成された混成集積装置５１はプリンタ−等のモータ回路を完成させるために所定の印刷配線が施された印刷基板に載置される。すると補助導電端子３７の外部電極４９Ｅが印刷基板のアース印刷配線に接触する。
【００２７】
金属細線４２Ａ、４２Ｂ・・・等は直径３８μｍの金線で形成されており１．９Ａの直流電流まで溶断することなく流せるが、ヒューズとなる金属細線４３は直径２３μｍの金線で形成されている。そのため１．０Ａ以上の直流電流が流れると溶断する。従ってモータ回路に１．０Ａ以上の過大電流が流れた時、ヒューズとなる金属細線４３が切断され、ＬＳＩ等のベアチップには過大電流が流れるのを防止し、これら回路素子が破壊されるのを防止する。
【００２８】
上述の実施例ではヒューズとなる金属細線４３をアース端子となる導電パターンと補助導電パターン間に接続したが、ヒューズとなる金属細線４３を電源端子となる導電パターンを設け、電源端子となる導電パターンと補助導電パターン間に接続してもよい。
【００２９】
図３は前述した混成集積回路５１を用いたプリンターのモータ回路である。混成集積回路５１にはＣＰＵ５２、モータ５３、電源５４及びコンデンサ５５等が外付けされている。
【００３０】
混成集積回路５１はベアチップ４０で形成したコントロール部５６、ＩＣのベアチップ４４で形成した制御回路５７及びベアチップ４６よりなる入力トランジスタ部５８よりなる。
【００３１】
ＣＰＵ５２から入力信号ＩＮ１が入力されると、トランジスタＴＲ１で増幅されコントロール回路５６に加わる。すると端子Ｓからハイレベルの信号を発生し、トランジスタＴＲ３をオンする。それによりトランジスタＴＲ４、ＴＲ５はオンする。このときトランジスタＴＲ６はオフされているので、端子ＴはローレベルであるためトランジスタＴＲ７、ＴＲ８はオフされている。
【００３２】
従って電源５４から端子ＶＣＣに加わった直流電圧ＶＤＤはトランジスタＴＲ４を経て端子ＯＵＴ１よりモータ５３に加わり、再び端子ＯＵＴ２からトランジスタＴＲ５を経て端子３５Ａに加わり、ヒューズとなる金属細線４３を経て印刷基板のアース印刷配線（図示せず）に流れ、モータ５３を回転させる。
【００３３】
次にＣＰＵ５２から入力信号ＩＮ２が入力されると、トランジスタＴＲ２で増幅されコントロール回路５６に加わる。今度は端子Ｔからハイレベルの信号を発生し、トランジスタＴＲ６をオンする。それによりトランジスタＴＲ７、ＴＲ８はオンする。このときトランジスタＴＲ３はオフされているので、トランジスタＴＲ４、ＴＲ５はオフされている。
【００３４】
そのため電源５４から端子ＶＣＣに加わった直流電圧ＶＤＤはトランジスタＴＲ７を経て端子ＯＵＴ２よりモータ５３に加わり、再び端子ＯＵＴ１からトランジスタＴＲ８を経て端子３５Ａに加わり、ヒューズとなる金属細線４３を経て印刷基板のアース印刷配線（図示せず）に流れ、モータ５３を回転させるが、前述とモータ５３に流れる電流の向き逆となるので、モータ５３は前述と逆に回転する。
【００３５】
何らかの原因で制御回路５７に過大電流が流れる。すると各ベアチップ４０、４４、４６とワイヤーボンディングパッド３１Ａ、３１Ｆ・・・等を接続する金属細線４２Ａ、４２Ｂ・・・よりヒューズとなる金属細線４３の径が細くされ溶断され易くしているので、金属細線４３が溶断し、回路素子が過大電流で破壊されるのを防止する。
【００３６】
前述においてヒューズとなる金属細線をアース導電端子と補助導電端子間に接続したが、ヒューズとなる金属細線を電源導電端子と補助導電端子間に接続してもよい。
【００３７】
【発明の効果】
本発明の混成集積装置のアース回路はアース端子又は電源端子となる導電パターンと補助導電パターン間をベアチップと導電パターンを接続する金属細線より小電流で溶断するヒューズ用の金属細線で接続したので、特別なヒューズ回路を設けることなくヒューズ効果を得ることができる。従って安価で且つ小型化されるので、基板を用いず各導電端子及びチップ部品をモールドし一体化して形成する混成集積回路として好適である。
【図面の簡単な説明】
【図１】本発明の混成集積装置のヒューズ回路の平面図である。
【図２】本発明の混成集積装置のヒューズ回路の断面図で、図２（Ａ）は製造過程を示す断面図、図２（Ｂ）は完成した断面図である。
【図３】本発明の混成集積装置のヒューズ回路の回路図である。
【図４】従来のパッケージ型半導体装置の断面図である。
【図５】従来の混成集積装置の平面図である。
【図６】従来の混成集積装置の断面図で、図６（Ａ）は製造過程を示す断面図、図６（Ｂ）は完成した断面図である。
【符号の説明】
３１Ａ、３１Ｆ　　　　ワイヤーボンディングパッド
３２Ａ、３２Ｆ　　　　導電パターン
３５　　　　　　　　　アース端子となる導電パターン
３７　　　　　　　　　補助導電パターン
４０　　　　　　　　　ベアチップ
４１Ａ、４１Ｂ　　　　電極
４２Ａ、４２Ｆ　　　　金属細線
４３　　　　　　　　　ヒューズ用の金属細線[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a fuse circuit of a hybrid integrated circuit in which a fuse circuit is formed using a thin metal wire connecting a circuit element and a conductive pattern serving as an electrode.
[0002]
[Prior art]
In recent years, semiconductor circuit devices used in electronic devices such as portable computers and printers are particularly required to be further reduced in size, thickness and weight. Therefore, as a semiconductor circuit device, there is a package type semiconductor device in which a semiconductor element is mounted on a semiconductor substrate and the semiconductor substrate is molded with an insulating resin.
[0003]
FIG. 4 shows a conventional package type semiconductor device. In the package type semiconductor device, a bare chip 3 such as an LSI is attached to a die bonding pad 2 formed on a substrate 1, and electrodes 4, 4 of the bare chip 3 are connected to lead terminals 5, 5 with thin metal wires 6, 6. Further, the lead terminals 5, 5 are attached to the printed wirings 8, 8 printed on the printed circuit board 7 by soldering.
[0004]
The periphery of the substrate 1 and the bare chip 3 is covered with an insulating resin layer 9. Since the package type semiconductor device has the lead terminals 5 and 5 exposed to the outside from the insulating resin layer 9, the overall size is large and there is a problem in miniaturization, thinning and weight reduction.
[0005]
5 and 6 are a plan view and a cross-sectional view, respectively, of a part of a hybrid integrated circuit device obtained by improving the above-described package type semiconductor device.
[0006]
A bare chip 10 of an IC or LSI circuit element is attached to a die bonding pad 11A formed on a conductive pattern 11. The electrodes 13A1, 13A2, 13A3... 13A7... Of the bare chip 10 such as an LSI are thin metal wires 16A1 bonded to wire bonding pads 15A1. , 162A2... 16A7.
[0007]
As shown in FIG. 6A, in the above-mentioned state, the upper portions of the conductive patterns 11, 14A1... 14A7... Are electrically separated by the separation grooves 18A, 18B. It has been continuous.
[0008]
The conductive pattern 11 and the conductive patterns 14A1... 14A7..., The bare chip 10 attached to the conductive pattern 11 and the fine metal wires 16A1. Fix it. Then, a continuous portion below the conductive pattern 11 and the conductive patterns 14A1... 14A7... Is cut along with the insulating resin 20 as shown by a dotted line, and the conductive pattern 11 and the conductive patterns 14A1.・ Isolate completely electrically.
[0009]
As shown in FIG. 6B, the lower surfaces of the conductive patterns 11, 14A1... 14A7. The exposed portions of the conductive patterns 11, 14A1, 14A2,... Are provided with external electrodes 21A... 21A7. You. Further, portions of the conductive patterns 11, 14A1... 14A7... Where no external electrodes are provided are covered with a resist 23 for the purpose of protecting the conductive patterns and the like to form a hybrid integrated circuit device.
[0010]
In the hybrid integrated circuit formed as described above, the external electrodes 21A... 21A7..., 22 are directly joined to the printed wiring provided with the necessary wiring on the printed board to constitute a motor circuit and the like.
[0011]
[Patent Document 1]
JP-A-04-162691
[0012]
[Problems to be solved by the invention]
Generally, in a hybrid integrated circuit in which a large current flows, such as a motor circuit, a fuse is provided in the circuit.
[0013]
However, as described above, the upper part is separated, but the lower part is a continuous conductive pattern, where a bare chip such as IC or LSI, a chip resistor, a chip capacitor, etc. are attached, and a bare metal wire is used to connect the bare chip electrode and conductive pattern. The provided wire bonding pads are connected. Then, after molding with an insulating resin, the lower continuous portion of the conductive pattern is cut, and the hybrid integrated circuit made without using a substrate is required to be thin, small, and inexpensive. Providing a fuse circuit is inappropriate.
[0014]
[Means for Solving the Problems]
The present invention is a hybrid integrated device having a fuse function without providing a special fuse circuit, a plurality of conductive patterns provided with a die bonding pad and a wire bonding pad which are separated by a separation groove and on which a bare chip is mounted. A bare chip mounted on the die bonding pad, a thin metal wire connecting an electrode of the bare chip and a wire bonding pad, and an auxiliary conductive pattern provided between the one conductive pattern serving as a ground terminal and ground. The present invention provides a fuse circuit of a hybrid integrated device in which the conductive pattern serving as the ground terminal and the auxiliary conductive pattern are connected by a thin metal wire that blows with a smaller current than a thin metal wire connecting the bare chip and the conductive pattern.
[0015]
A plurality of conductive patterns separated by separation grooves and provided with a die bonding pad and a wire bonding pad on which a bare chip is mounted; a bare chip mounted on the die bonding pad; an electrode of the bare chip and a wire bonding pad; And a conductive pattern provided as a power supply terminal and an auxiliary conductive pattern provided between a power supply. The bare chip and the conductive pattern are connected between the conductive pattern serving as the power supply terminal and the auxiliary conductive pattern. Provided is a fuse circuit of a hybrid integrated device connected by a thin metal wire that blows with a smaller current than a thin metal wire.
[0016]
In the present invention, the thin metal wire is a gold wire, the bare chip electrode and the wire bonding pad are connected by a gold wire having a diameter of 38 μm, and the conductive pattern for the power terminal and the auxiliary conductive pattern are connected by a gold wire having a diameter of 23 μm. And a fuse circuit for the hybrid integrated device.
[0017]
BEST MODE FOR CARRYING OUT THE INVENTION
The fuse circuit of the hybrid integrated device according to the present invention will be described with reference to FIGS.
[0018]
1 and 2 are a plan view and a sectional view, respectively, of a fuse circuit of a hybrid integrated device according to the present invention.
[0019]
A conductive pattern 34A formed with a number of conductive patterns 32A, 32F,... Formed with wire bonding pads 31A, 31F,. 35, an auxiliary conductive pattern 37 on which a wire bonding pad 37A is formed. The conductive patterns 32A,... 32F,... And the conductive pattern 35 serving as a ground terminal and the auxiliary conductive pattern 37 are electrically separated from each other by separation grooves 36, 36 as shown in FIG. Are continuous.
[0020]
A bare chip 40 of an LSI for controlling a motor circuit is attached to the die bonding pad 33A formed on the conductive pattern 34A. , Etc. of the bare chip 40 and the wire bonding pads 31A, 31B, 31F,... Formed on the conductive patterns 32A, 32F,. 42A, 42B... 42F.
[0021]
The wire bonding pad 31A connected to the electrode 41A of the bare chip 40 by the thin metal wire 42A is connected to the wire bonding pad 35A formed on the conductive pattern 35 serving as the ground terminal by the thin metal wire 42T wire-bonded.
[0022]
Further, the wire bonding pad 35A of the conductive pattern 35 has a smaller diameter than the wire bonding pad 37A provided on the auxiliary conductive pattern 37 and the fine metal wires 42A, 42B... 42F. 43 is connected. In the present embodiment, a gold wire having a diameter of 38 μm is used for the thin metal wires 42A, 42B... 42F.
[0023]
The bare chip 44 of the motor control IC is similarly attached to another die bonding pad, and each electrode 45A is connected to the wire bonding pad 31G by a thin metal wire 42G. Similarly, the bare chip 46 of the input transistor is attached to a die bonding pad, and the electrodes 47A are connected to the respective wire bonding pads 31R by thin metal wires 42R. Further, the electrodes of the chip resistors 48A, 48B,... Are directly attached to the die bonding pads 33B, 33C,.
[0024]
The bare chip 40 of the LSI is attached to the die bonding pad 33A, and the electrodes 31A, 31B... 31F... And the conductive patterns 32A. After each circuit element is attached and electrically connected by connecting or the like, these circuit elements, conductive patterns, and fine metal wires are molded and fixed with the insulating resin 50.
[0025]
After the circuit elements, the conductive patterns, and the fine metal wires are molded and fixed with the insulating resin 20, the conductive patterns 32 A, 32 F, 35, 37... Are cut along with the insulating resin 50 along dotted lines shown in FIG. As shown in FIG. 2B, in this state, the lower ends of the conductive patterns 32A, 32F, 35, 37,... Are exposed to the outside. ... Form 49E. Then, the remaining exposed portions of the conductive patterns 32A, 32F, 35, 37,... Are covered with the resist 50.
[0026]
The hybrid integrated device 51 formed as described above is mounted on a printed circuit board provided with predetermined printed wiring in order to complete a motor circuit such as a printer. Then, the external electrode 49E of the auxiliary conductive terminal 37 comes into contact with the ground printed wiring of the printed board.
[0027]
The thin metal wires 42A, 42B... Are formed of a gold wire having a diameter of 38 μm, and can flow up to a direct current of 1.9 A without fusing. However, the thin metal wire 43 serving as a fuse is formed of a gold wire having a diameter of 23 μm. I have. Therefore, when a direct current of 1.0 A or more flows, the fuse is blown. Therefore, when an excessive current of 1.0 A or more flows through the motor circuit, the thin metal wire 43 serving as a fuse is cut off, preventing an excessive current from flowing through a bare chip such as an LSI, and preventing the destruction of these circuit elements. To prevent.
[0028]
In the above embodiment, the thin metal wire 43 serving as a fuse is connected between the conductive pattern serving as a ground terminal and the auxiliary conductive pattern. However, the thin metal wire 43 serving as a fuse is provided with a conductive pattern serving as a power terminal, and the conductive pattern serving as a power terminal is provided. And an auxiliary conductive pattern.
[0029]
FIG. 3 shows a motor circuit of a printer using the hybrid integrated circuit 51 described above. A CPU 52, a motor 53, a power supply 54, a capacitor 55 and the like are externally attached to the hybrid integrated circuit 51.
[0030]
The hybrid integrated circuit 51 includes a control section 56 formed by the bare chip 40, a control circuit 57 formed by the bare chip 44 of the IC, and an input transistor section 58 formed by the bare chip 46.
[0031]
When the input signal IN1 is input from the CPU 52, the signal is amplified by the transistor TR1 and applied to the control circuit 56. Then, a high-level signal is generated from the terminal S, and the transistor TR3 is turned on. Thereby, the transistors TR4 and TR5 are turned on. At this time, since the transistor TR6 is turned off, the terminal T is at a low level, so that the transistors TR7 and TR8 are turned off.
[0032]
Therefore, the DC voltage VDD applied from the power source 54 to the terminal VCC is applied to the motor 53 from the terminal OUT1 via the transistor TR4, is applied to the terminal 35A again from the terminal OUT2 via the transistor TR5, and is grounded via the thin metal wire 43 serving as a fuse. It flows to the printed wiring (not shown) and rotates the motor 53.
[0033]
Next, when the input signal IN2 is input from the CPU 52, it is amplified by the transistor TR2 and applied to the control circuit 56. This time, a high level signal is generated from the terminal T to turn on the transistor TR6. Thereby, the transistors TR7 and TR8 are turned on. At this time, since the transistor TR3 is off, the transistors TR4 and TR5 are off.
[0034]
Therefore, the DC voltage VDD applied from the power supply 54 to the terminal VCC is applied to the motor 53 from the terminal OUT2 via the transistor TR7, is applied again to the terminal 35A from the terminal OUT1 via the transistor TR8, and is grounded via the thin metal wire 43 serving as a fuse. The current flows through a printed wiring (not shown) and rotates the motor 53. However, since the direction of the current flowing through the motor 53 is opposite to that described above, the motor 53 rotates in the opposite direction.
[0035]
An excessive current flows through the control circuit 57 for some reason. Then, the diameter of the metal thin wire 43 which becomes a fuse is made smaller than the metal thin wires 42A, 42B... Connecting the respective bare chips 40, 44, 46 and the wire bonding pads 31A, 31F. This prevents the thin metal wire 43 from being melted and the circuit element from being broken by an excessive current.
[0036]
In the above description, the thin metal wire serving as a fuse is connected between the ground conductive terminal and the auxiliary conductive terminal, but the thin metal wire serving as a fuse may be connected between the power supply conductive terminal and the auxiliary conductive terminal.
[0037]
【The invention's effect】
Since the ground circuit of the hybrid integrated device of the present invention is connected between the conductive pattern serving as the ground terminal or the power supply terminal and the auxiliary conductive pattern with a metal thin wire for a fuse that blows with a smaller current than the metal thin wire connecting the bare chip and the conductive pattern, The fuse effect can be obtained without providing a special fuse circuit. Therefore, since it is inexpensive and miniaturized, it is suitable as a hybrid integrated circuit in which each conductive terminal and chip component are molded and integrated without using a substrate.
[Brief description of the drawings]
FIG. 1 is a plan view of a fuse circuit of a hybrid integrated device according to the present invention.
2A and 2B are cross-sectional views of a fuse circuit of the hybrid integrated device of the present invention. FIG. 2A is a cross-sectional view showing a manufacturing process, and FIG. 2B is a completed cross-sectional view.
FIG. 3 is a circuit diagram of a fuse circuit of the hybrid integrated device of the present invention.
FIG. 4 is a sectional view of a conventional package type semiconductor device.
FIG. 5 is a plan view of a conventional hybrid integrated device.
6A and 6B are cross-sectional views of a conventional hybrid integrated device. FIG. 6A is a cross-sectional view showing a manufacturing process, and FIG. 6B is a completed cross-sectional view.
[Explanation of symbols]
31A, 31F Wire bonding pads 32A, 32F Conductive pattern 35 Conductive pattern 37 serving as ground terminal Auxiliary conductive pattern 40 Bare chips 41A, 41B Electrodes 42A, 42F Fine metal wire 43 Fine metal wire for fuse

Claims (3)

分離溝で分離され、ベアチップが載置されるダイボンディングパッド及びワイヤーボンディングパッドが設けられた複数の導電パターンと、
前記ダイボンディングパッドに載置されたベアチップと、
前記ベアチップの電極とワイヤーボンディングパッドとを接続する金属細線と、
アース端子となる前記一の導電パターンとアース間に設けられた補助導電パターンとよりなり、
前記アース端子となる導電パターンと補助導電パターン間をベアチップと導電パターンを接続する金属細線より小電流で溶断する金属細線で接続したことを特徴とする混成集積装置のヒューズ回路。A plurality of conductive patterns provided with a die bonding pad and a wire bonding pad on which a bare chip is mounted, separated by a separation groove,
A bare chip mounted on the die bonding pad,
A thin metal wire connecting the bare chip electrode and a wire bonding pad,
It comprises an auxiliary conductive pattern provided between the one conductive pattern serving as a ground terminal and the ground,
A fuse circuit for a hybrid integrated device, wherein the conductive pattern serving as the ground terminal and the auxiliary conductive pattern are connected by a thin metal wire that blows with a smaller current than a thin metal wire connecting the bare chip and the conductive pattern. 分離溝で分離され、ベアチップが載置されるダイボンディングパッド及びワイヤーボンディングパッドが設けられた複数の導電パターンと、
前記ダイボンディングパッドに載置されたベアチップと、
前記ベアチップの電極とワイヤーボンディングパッドとを接続する金属細線と、
電源端子となる一の導電パターンと電源間に設けられた補助導電パターンとよりなり、
前記電源端子となる導電パターンと補助導電パターン間をベアチップと導電パターンを接続する金属細線より小電流で溶断する金属細線で接続したことを特徴とする混成集積装置のヒューズ回路。A plurality of conductive patterns provided with a die bonding pad and a wire bonding pad on which a bare chip is mounted, separated by a separation groove,
A bare chip mounted on the die bonding pad,
A thin metal wire connecting the bare chip electrode and a wire bonding pad,
It consists of one conductive pattern that becomes a power supply terminal and an auxiliary conductive pattern provided between the power supplies,
A fuse circuit for a hybrid integrated device, wherein the conductive pattern serving as the power supply terminal and the auxiliary conductive pattern are connected by a thin metal wire that blows with a smaller current than a thin metal wire connecting the bare chip and the conductive pattern. 前記金属細線は金線であり、ベアチップの電極とワイヤーボンディングパッドとを直径３８μｍの金線で接続し、前記電源端子用の導電パターンと補助導電パターン間を直径２３μｍの金線で接続したことを特徴とする請求項１または請求項２記載の混成集積装置のヒューズ回路。The thin metal wire is a gold wire, and the bare chip electrode and the wire bonding pad are connected by a gold wire having a diameter of 38 μm, and the conductive pattern for the power terminal and the auxiliary conductive pattern are connected by a gold wire having a diameter of 23 μm. 3. The fuse circuit according to claim 1, wherein the fuse circuit is a hybrid integrated device.
JP2002281890A 2002-09-26 2002-09-26 Motor driver fuse circuit incorporated in hybrid integrated circuit device Expired - Lifetime JP4093835B2 (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100401420C (en) * 2004-05-05 2008-07-09 台湾积体电路制造股份有限公司 Fuse circuit
US10707153B2 (en) 2016-04-29 2020-07-07 Stmicroelectronics S.R.L. Semiconductor device having die pad

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100401420C (en) * 2004-05-05 2008-07-09 台湾积体电路制造股份有限公司 Fuse circuit
US10707153B2 (en) 2016-04-29 2020-07-07 Stmicroelectronics S.R.L. Semiconductor device having die pad

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