JP2004119658A - Film thickness measuring device, etching device and film thickness measuring method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To measure the thickness of a film for a substrate in a real time in an etching device employing treating solution. <P>SOLUTION: In the etching device wherein the treating solution 95 is reserved in a vessel 21 to apply etching on the substrate 9 by dipping the substrate 9 into the treating solution 95, a light source unit 34 for emitting illumination light, a measuring head 31 for emitting the illumination light against the substrate 9 and inputting reflection light from the substrate 9, a spectroscope 35 for obtaining the spectral intensity of the reflection light, and a comparing unit 411 for obtaining the spectral reflection rate of the reflection light to compare the same with a reference spectral reflection rate, are provided. Upon measuring, the incidental unit 311 on the tip end of the measuring head 31 is brought into a condition that the same is contacted with the treating solution 95. According to this method, the reflection light from the substrate 9 can be stably obtained and the thickness of the film on the substrate 9 during treatment can be measured optimally whereby the strict management of various conditions of the treating solution 95 becomes unnecessary. <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a technique for measuring a film thickness on a substrate to be etched.
[0002]
[Prior art]
2. Description of the Related Art Conventionally, in order to form a film having a desired thickness on a surface of a semiconductor substrate (hereinafter, referred to as “substrate”), etching (also called “cleaning”) is performed on the substrate surface by supplying a processing liquid to the substrate. Is being done. At this time, the etching rate (so-called etching rate) is measured in advance, and a number of conditions relating to the etching are kept constant. Therefore, control is performed so as to have a desired thickness.
[0003]
A film thickness measurement device for measuring the film thickness of the substrate is provided outside or inside the etching device in the vicinity of the chamber where the etching is performed, and when the etching speed is measured in advance, the substrate is removed. It is taken out of the chamber and transported to a film thickness measuring device for measurement, and an etching rate is obtained based on the measurement result.
[0004]
As a method of obtaining a desired film thickness by polishing a substrate, a method of providing an opening in a polishing member and confirming the film thickness of the substrate in real time has been proposed as in Patent Document 1.
[0005]
[Patent Document 1]
JP-A-11-48133
[Problems to be solved by the invention]
As described above, in the conventional etching apparatus, since the film thickness is controlled by time based on the etching rate measured in advance, it is necessary to strictly control the etching conditions such as the temperature of the processing liquid and the contamination. As a result, the cost required for etching increases. Further, it is necessary to measure the etching rate in advance, and the time required for the processing is also increased as a whole.
[0007]
The present invention has been made in view of the above problems, and has as its object to reduce the cost required for etching and increase the accuracy of film thickness control by checking the film thickness of a substrate during etching in real time. .
[0008]
[Means for Solving the Problems]
An invention according to claim 1 is a film thickness measuring device for measuring a film thickness on a substrate to be etched, wherein a light source for emitting light irradiated to the substrate and light from the substrate are incident from an incident portion. A light-receiving unit; and a calculation unit for detecting a film thickness on the substrate based on an output from the light-receiving unit, wherein a space between the substrate and the incident unit is filled with a processing liquid.
[0009]
The invention according to claim 2 is the film thickness measuring apparatus according to claim 1, further comprising a container for storing a processing liquid in which the substrate is immersed, wherein the incident portion is in contact with the processing liquid in the container. .
[0010]
The invention according to claim 3 is the film thickness measuring apparatus according to claim 1, further comprising a supply unit that supplies a processing liquid between the incident unit and the substrate.
[0011]
The invention according to claim 4 is the film thickness measuring device according to claim 3, wherein the supply unit discharges the processing liquid toward the incident unit, and the processing liquid flows from the incident unit to the substrate. Be guided.
[0012]
The invention according to claim 5 is the film thickness measuring device according to claim 4, wherein the incident part is located above the substrate, and the processing liquid falls from the incident part to the substrate. Be guided.
[0013]
The invention according to claim 6 is the film thickness measuring apparatus according to claim 5, wherein the supply unit has at least one discharge port that discharges the processing liquid from a plurality of directions toward the incident unit. .
[0014]
According to a seventh aspect of the present invention, in the film thickness measuring apparatus according to any one of the first to sixth aspects, the arithmetic unit calculates a reference spectral reflectance of a substrate on which a film having a predetermined thickness is formed. A storage unit for storing; and a comparing unit for comparing the spectral reflectance of the substrate derived from the output from the light receiving unit with the reference spectral reflectance.
[0015]
The invention according to claim 8 is the film thickness measuring apparatus according to any one of claims 1 to 7, further comprising a rotation mechanism that rotates the substrate while keeping the normal direction of the main surface constant.
[0016]
According to a ninth aspect of the present invention, there is provided an etching apparatus comprising the film thickness measuring apparatus according to any one of the first to eighth aspects, a processing unit for etching a substrate, and a processing unit for the processing unit. And a control unit that stops etching in the processing unit based on a signal from the film thickness measurement device.
[0017]
The invention according to claim 10 is a film thickness measuring method for measuring a film thickness on a substrate to be etched, wherein a step of filling a space between an incident portion on which light from the substrate is incident and the substrate with a processing liquid; Irradiating the substrate with light, receiving light from the substrate via the incident portion, obtaining a spectral intensity of the light, and detecting a film thickness on the substrate based on the spectral intensity And a process.
[0018]
The invention according to claim 11 is the film thickness measuring method according to claim 10, wherein the step of filling with the processing liquid includes the step of immersing the substrate in the processing liquid, and the step of: Contacting.
[0019]
According to a twelfth aspect of the present invention, in the film thickness measuring method according to the tenth aspect, the processing liquid is supplied between the substrate and the incident part in the step of filling with the processing liquid.
[0020]
A thirteenth aspect of the present invention is the film thickness measuring method according to any one of the tenth to twelfth aspects, wherein the normal direction of the main surface is kept constant before the step of obtaining the spectral intensity. The method further includes the step of rotating the substrate.
[0021]
BEST MODE FOR CARRYING OUT THE INVENTION
FIG. 1 is a plan view showing an etching apparatus 1 according to the first embodiment of the present invention. The etching apparatus 1 includes an indexer 11 on which a plurality of cassettes 91 accommodating the substrates 9 are placed, a first transport robot 12 that accesses the indexers 11, and a second transport that transfers the substrates 9 to and from the first transport robot 12. It has a robot 13 and a plurality of chambers 14 for etching the substrate 9.
[0022]
The first transfer robot 12 has upper and lower two-stage arms 121, and the second transfer robot 13 also has upper and lower two-stage arms 131. When the processing is performed in the etching apparatus 1, one arm 121 of the first transfer robot 12 takes out the substrate 9 from the indexer 11 and transfers the substrate 9 to one arm 131 of the second transfer robot 13. The plurality of chambers 14 are arranged on both sides of the transfer path of the second transfer robot 13, and the second transfer robot 13 transfers the substrate 9 to one of the chambers 14.
[0023]
The substrate 9 that has been etched in the chamber 14 is taken out by the other arm 131 of the second transfer robot 13, passed to the other arm 121 of the first transfer robot 12, and sent to the indexer 11 by the first transfer robot 12. Will be returned. In the etching apparatus 1, the above operations on the plurality of substrates 9 are performed substantially in parallel (that is, the operations on one substrate 9 and the operations on the other substrates 9 are performed partially in parallel), and a plurality of operations are performed. The etching of the substrate 9 is efficiently performed using the chamber 14.
[0024]
FIG. 2 is a diagram showing the configuration of the chamber 14, and the mechanical configuration is shown from the front. The chamber 14 includes a container 21 (also shown in FIG. 1) for storing a processing liquid 95 such as dilute hydrofluoric acid used for etching, a support member 22 for supporting the substrate 9 in the container 21, and a support member via a shaft. When the substrate 9 is carried into the chamber 14 by the arm 131 of the second transfer robot 13, the support member 22 rises to receive the substrate 9, and after the arm 131 is evacuated. The substrate 9 is immersed in the processing liquid 95 by lowering the support member 22.
[0025]
The etching device 1 is a measuring device for detecting a film thickness on the substrate 9, a measuring head 31 (also shown in FIG. 1) located above the container 21, a rotating arm 32 supporting the measuring head 31, and a rotating arm 32. , A light source unit having a light source for emitting light to be introduced into the measurement head 31, and a spectroscope 35 for dispersing light incident on the measurement head 31 from the substrate 9. Having.
[0026]
The distal end of the measuring head 31 is an incident part 311 for emitting illumination light toward the substrate 9 and receiving reflected light from the substrate 9. Light from the light source unit 34 is transmitted to the half mirror 312 in the measuring head 31. The light from the substrate 9 passes through the half mirror 312 from the incidence unit 311 and is guided to the spectroscope 35. Then, the light from the substrate 9 is received by the spectroscope 35, and the spectral intensity is obtained. As shown in FIG. 1, the measuring head 31 can be moved back and forth between the upper position and the side position of the substrate 9 by the turning operation of the turning / elevating mechanism 33. As shown in FIG. 2, the substrate 9 can be moved up and down with respect to the substrate 9 in the processing liquid 95.
[0027]
The spectral intensity of the reflected light from the substrate 9, which is the output from the spectroscope 35, is input to the control unit 4 that performs various calculations, and is processed by the calculation unit 41 of the control unit 4. The calculation unit 41 includes a comparison unit 411 that performs a comparison calculation described later, and a memory 412 that stores various data related to the substrate 9 and stores a calculation result of the calculation unit 41 and the like.
[0028]
FIG. 3 is a diagram showing a flow of the operation of the etching apparatus 1. In the etching apparatus 1, data (hereinafter, referred to as “reference spectral data”) indicating the relationship between the thickness of the film formed on the substrate 9 and the spectral reflectance before the etching process is stored in the memory 412 and prepared. Is performed (step S11).
[0029]
The reference spectral data may be acquired by the etching apparatus 1 or may be separately prepared. When the reference spectral data is acquired by the etching apparatus 1, various conditions such as the temperature of the processing liquid in the container 21 are temporarily controlled to be constant, and the substrate 9 having a known film state is immersed in the processing liquid. While performing etching, the spectral intensity of the reflected light from the substrate 9 is obtained, and the spectral reflectance of the substrate 9 is repeatedly obtained. Then, the etching rate is specified from various conditions of the processing liquid, and the relationship between the thickness of the film on the substrate 9 (more precisely, the film to be etched) and the spectral reflectance is obtained.
[0030]
When reference spectral data is separately prepared, in addition to the above-described method, etching is performed while measuring the spectral intensity of the reflected light, and the etching is stopped halfway, and the measurement is performed by another measuring apparatus outside the processing liquid. The measurement of the film thickness may be performed. In this case, the relationship between the film thickness and the spectral reflectance can be obtained without strict temperature control.
[0031]
FIG. 4 is a diagram showing a state of a change in the spectral reflectance obtained by the incident unit 311 in contact with the processing liquid when the substrate 9 on which the pattern is formed is etched. As the etching progresses, the spectral reflectance changes sequentially from a graph 601 to a graph 606 in FIG. As described above, the film thickness (which can be associated with the etching amount) and the spectral reflectance have a relationship corresponding to each other. Since the spectral reflectance is derived from the spectral intensity of the reflected light and the spectral intensity of the light source, the film thickness and the spectral intensity of the reflected light (that is, the output from the spectroscope 35) substantially correspond to each other. ing.
[0032]
FIG. 5 is a diagram illustrating a result of measuring a spectral reflectance in a state where the incident part 311 is in contact with the processing liquid when a single-layer oxide film is formed on the substrate 9. FIG. 5 shows the result of performing a plurality of measurements when the film on the substrate 9 has a predetermined thickness, and the graph obtained by the plurality of measurements substantially overlaps as a curve indicated by reference numeral 611. . FIG. 5 shows that the relationship between the measurement result and the film thickness is stable. Although not shown in FIG. 5, the peak position in the graph 611 changes as the film thickness changes, so that the film thickness and the spectral reflectance correspond to each other.
[0033]
In addition, if the incident portion 311 is separated from the processing liquid and the reflected light of the substrate 9 on which the single-layer oxide film is formed is measured, as shown in the graphs 691 to 694 in FIG. The graph fluctuates irrespective of the film thickness, and stable measurement cannot be performed. This is considered to be due to the complex reflection of the illumination light on the liquid surface. That is, in the film thickness measuring device of the etching device 1, a stable spectral reflectance can be obtained by filling the space between the substrate 9 and the incident part 311 with the processing liquid.
[0034]
When the reference spectral data is prepared in the memory 412, the processing liquid is injected into the container 21 (may be injected in advance) (FIG. 3: Step S12). The substrate 9 is transferred from the indexer 11 to the chamber 14 via the first transfer robot 12 and the second transfer robot 13, and the support member 22 receives the substrate 9 from the second transfer robot 13 and descends, so that the substrate 9 It is immersed in the processing liquid stored in 21 (step S13). Thereby, the etching of the substrate 9 is started. At this time, the evacuated measurement head 31 moves above the substrate 9 and further descends, and the incident part 311 at the tip comes into contact with the processing liquid (that is, is partially immersed in the processing liquid) (step). S14). A sapphire lens or the like that can withstand the processing liquid is used at the tip of the entrance 311.
[0035]
Here, the light source unit 34 is turned on (it may be turned on in advance), the substrate 9 is irradiated with illumination light, and the reflected light from the substrate 9 is guided to the spectroscope 35 via the incident part 311. The spectroscope 35 acquires the spectral intensity of the reflected light and outputs it to the control unit 4 (Step S15). The calculation unit 41 of the control unit 4 obtains the spectral reflectance of the substrate 9 from the spectral intensity of the reflected light and the spectral intensity of the illumination light. On the other hand, the comparison unit 411 of the calculation unit 41 acquires the spectral reflectance when the film of the substrate 9 has a predetermined thickness from the reference spectral data as the reference spectral reflectance. Then, by comparing the spectral reflectance of the reflected light with the reference spectral reflectance, it is confirmed whether or not the difference (for example, the area of the difference between the graphs of the two spectral reflectances) is equal to or smaller than a predetermined value (step S16). .
[0036]
When the difference between the spectral reflectance of the reflected light and the reference spectral reflectance becomes equal to or less than a predetermined value, the measuring head 31 is retracted from the container 21, the substrate 9 is removed from the processing liquid, and the etching process is substantially stopped ( Step S17). The substrate 9 is stored in the cassette 91 of the indexer 11 by the second transfer robot 13 and the first transfer robot 12. If there is a substrate 9 to be etched next, steps S13 to S17 are repeated (step S18).
[0037]
As described above, the etching apparatus 1 can detect in real time whether or not the film thickness on the substrate 9 has reached the predetermined value while immersed in the processing liquid. As a result, there is no need to strictly control the temperature and dirt (or deterioration) of the processing liquid as in the related art, and the manufacturing cost of the substrate 9 can be reduced. Further, since the film thickness is not affected by the film thickness at the start of etching, highly accurate film thickness control can be performed. Furthermore, it is sufficient to acquire the reference spectral data only once for the same type of substrate 9, and it is possible to prevent the time required for etching from substantially increasing substantially.
[0038]
FIG. 7 is a front view showing the structure of the chamber 14 of the etching apparatus 1 according to the second embodiment. Except for the structure inside the chamber 14 of the etching apparatus 1, it is the same as the first embodiment. In FIG. 7, the illustration of the light source unit 34, the spectroscope 35, and the control unit 4 shown in FIG. 2 is omitted.
[0039]
The chamber 14 has a cup 21a, and has a support member 22a that holds the substrate 9 by suction at the center of the cup 21a. The support member 22a is connected to the rotating / elevating mechanism 23a via a shaft. The rotating / elevating mechanism 23a raises and lowers the substrate 9 together with the support member 22a when loading and unloading the substrate 9, and when etching the substrate 9, moves the substrate 9 together with the support member 22a at a high speed while keeping the normal direction of the main surface constant. Rotate to.
[0040]
As in the first embodiment, a film thickness determining device is disposed in the chamber 14, and a measuring head 31 having an incident part 311 facing the substrate 9 is located above the substrate 9. The measuring head 31 can be moved up and down with respect to the main surface of the substrate 9 by the rotating arm 32 and the rotating / elevating mechanism 33, and can be moved between the upper position and the side position of the substrate 9. . The structure of the measuring head 31 is the same as that of the first embodiment. The measuring head 31 emits the illumination light from the light source unit 34 toward the substrate 9 and guides the reflected light from the substrate 9 from the incident part 311 to the spectroscope 35. .
[0041]
In the chamber 14 according to the second embodiment, a discharge nozzle 51 for discharging a processing liquid is attached to the measuring head 31, and the discharge nozzle 51 is connected to a processing liquid supply unit 52 via a supply pipe. FIG. 8 is a sectional view showing the discharge nozzle 51. The discharge nozzle 51 has a ring shape centered on the optical axis of the incident portion 311 (that is, the axis perpendicular to the substrate 9), and is attached to the main body of the measuring head 31 via a fixing member 55. A flow path 511 is formed inside the discharge nozzle 51, and a ring-shaped and slit-shaped discharge port 512 is formed along the flow path 511.
[0042]
Therefore, when the processing liquid is supplied from the processing liquid supply unit 52 to the flow path 511, the processing liquid is discharged from the discharge port 512 toward the entire periphery of the incident unit 311. The treatment liquid is guided so as to fall from the tip of the incident part 311 to the upper surface of the substrate 9 by gravity. As a result, the space between the substrate 9 and the incident part 311 can be easily filled with the processing liquid 95 without using air by utilizing gravity. The distance between the incident part 311 and the substrate 9 is, for example, 5 to 6 mm.
[0043]
FIG. 9 is a diagram showing a flow of the operation of the etching apparatus 1 according to the second embodiment. First, similarly to the first embodiment, reference spectral data indicating the relationship between the thickness of the film on the substrate 9 and the spectral reflectance is prepared in the memory 412 of the control unit 4 (step S21). The reference spectral data may be acquired by the etching apparatus 1 while temporarily managing conditions such as temperature, or may be separately obtained. Thereafter, the substrate 9 is transferred from the indexer 11 to the chamber 14 by the first transfer robot 12 and the second transfer robot 13.
[0044]
In the chamber 14, the support member 22a is raised by the rotating / elevating mechanism 23a, receives the substrate 9 from the second transport robot 13, descends and carries the substrate 9 into the cup 21a (step S22). The measuring head 31 moves to a position close to the upper surface of the substrate 9 (Step S23), and the substrate 9 is further rotated by the rotating / elevating mechanism 23a (Step S24). In this state, the processing liquid supply unit 52 is activated, the processing liquid is supplied from the discharge nozzle 51 to the gap between the incident unit 311 and the substrate 9, and the gap is filled with the processing liquid (step S25).
[0045]
Thereafter, similarly to the first embodiment, illumination light is emitted from the light source unit 34 toward the substrate 9 via the incident part 311, and the reflected light is received by the spectroscope 35 via the incident part 311 to be spectrally separated. The intensity is obtained (Step S26). At this time, the reflected light is stably acquired by propagating in the processing liquid interposed between the incident part 311 and the substrate 9. The arithmetic unit 41 of the control unit 4 calculates the spectral reflectance of the substrate 9 from the spectral intensity of the reflected light, and the comparing unit 411 determines whether the difference between the spectral reflectance of the reflected light and the reference spectral reflectance is equal to or less than a predetermined value. It is confirmed (step S27).
[0046]
The calculation of the spectral reflectance of the reflected light and the comparison with the reference spectral reflectance are repeated, and when the difference between the spectral reflectance of the reflected light and the reference spectral reflectance is equal to or less than a predetermined value, the thickness of the substrate 9 becomes a predetermined thickness. When it is determined that the process has been completed, the discharge of the processing liquid is stopped under the control of the control unit 4, and the rotation of the substrate 9 is also stopped, whereby the etching is stopped. The measurement head 31 is retracted from the substrate 9 and the substrate 9 is lifted, and the substrate 9 is returned to the indexer 11 by the second transfer robot 13 and the first transfer robot 12 (Step S28). If there is a substrate 9 to be processed next, steps S22 to S28 are repeated for that substrate 9 (step S29).
[0047]
As described above, in the etching apparatus 1 according to the second embodiment, the space between the incident portion 311 and the substrate 9 is filled with the processing liquid by the discharge from the discharge nozzle 51. Thus, similarly to the first embodiment, it is possible to detect in real time whether or not the film thickness on the substrate 9 has reached the predetermined value during the processing. As a result, it is not necessary to strictly control the temperature, dirt, and the like of the processing liquid as in the related art, so that the manufacturing cost of the substrate 9 can be reduced and the accuracy of film thickness control can be improved. Further, it is sufficient to acquire the reference spectral data only once for the same type of substrate 9, and it is possible to prevent the time required for etching from substantially increasing substantially.
[0048]
Furthermore, since the substrate 9 rotates during the measurement, the acquired spectral reflectance (corresponding to the spectral intensity of the reflected light) is equal to the average of the spectral reflectance (or spectral intensity) of the ring-shaped region on the substrate 9. Become. As a result, for example, even when a pattern is formed on the substrate 9, the measurement result is prevented from being varied due to local measurement, and stable film thickness measurement (that is, film thickness detection) is realized. Is done.
[0049]
FIG. 10 is a diagram showing another example of the discharge nozzle. The discharge nozzle 51a shown in FIG. 10 has one discharge port 512a for discharging the processing liquid between the incident part 311 and the substrate 9. The processing liquid spreads and is discharged from the discharge port 512 a, and a part of the processing liquid is directed toward the incident part 311 and drops from the incident part 311, so that the processing is performed without air between the incident part 311 and the substrate 9. Filled with liquid.
[0050]
FIG. 11 is a view showing still another example of the discharge nozzle. The discharge nozzle 51b shown in FIG. 11 has a ring shape that covers the periphery of the incident portion 311 and has a structure in which the discharge nozzle 51 shown in FIG. The processing liquid discharged downward from the discharge nozzle 51b falls from above toward the front end while covering the entire side surface of the incident portion 311. As a result, the processing liquid enters the gap between the tip of the incident part 311 and the substrate 9 from the surroundings, and the gap is filled with the processing liquid.
[0051]
As described above, various structures may be used as the discharge nozzle as long as the space between the tip of the incident portion 311 and the substrate 9 can be filled without intervening air. Note that the shape of the tip of the incident part 311 may be appropriately modified so that the processing liquid smoothly enters between the incident part 311 and the substrate 9. Further, the processing liquid may be discharged from the plurality of discharge ports toward the tip of the incident section 311. By discharging the processing liquid toward the incident part 311 from a plurality of directions, the space between the incident part 311 and the substrate 9 can be appropriately filled with the processing liquid.
[0052]
Although the embodiments of the present invention have been described above, the present invention is not limited to the above embodiments, and various modifications are possible.
[0053]
For example, in the first embodiment, one substrate 9 is etched, but a batch-type apparatus may be used. In this case, the detection of the film thickness of only one sheet may be performed. In the first embodiment, the substrate 9 may be rotated as in the second embodiment.
[0054]
In the above embodiment, the spectral reflectance of the substrate 9 is compared with the reference spectral reflectance, but the spectral intensity of the reflected light may be compared with the reference spectral intensity. That is, the spectral intensity can be treated equivalently to the spectral reflectance in the above embodiment. The spectral reflectance and the spectral intensity may be obtained only for some discrete wavelengths.
[0055]
The substrate 9 to be etched (or cleaned) is not limited to a semiconductor substrate, but is also a measuring method for detecting the above film thickness when etching a glass substrate used for a liquid crystal display device or other flat panel display devices. Can be used.
[0056]
【The invention's effect】
ADVANTAGE OF THE INVENTION According to this invention, it becomes unnecessary to strictly manage a processing liquid, and it can aim at reduction of the manufacturing cost of a board | substrate, and can raise the precision of film thickness control.
[0057]
According to the fifth aspect of the present invention, the space between the incident portion and the substrate can be easily filled with the processing liquid when the processing liquid is discharged.
[0058]
According to the invention of claim 6, when the processing liquid is discharged, the space between the incident part and the substrate can be appropriately filled with the processing liquid.
[Brief description of the drawings]
FIG. 1 is a plan view showing an etching apparatus according to a first embodiment.
FIG. 2 is a diagram showing a configuration of a chamber.
FIG. 3 is a diagram showing a flow of an operation of the etching apparatus.
FIG. 4 is a diagram showing a state of a change in spectral reflectance of a substrate on which a pattern is formed.
FIG. 5 is a diagram showing the spectral reflectance of a substrate on which a single-layer oxide film is formed.
FIG. 6 is a diagram exemplifying a spectral reflectance of a substrate measured by separating an incident portion from a processing liquid.
FIG. 7 is a front view showing a structure of a chamber of an etching apparatus according to a second embodiment.
FIG. 8 is a sectional view showing a discharge nozzle.
FIG. 9 is a diagram showing a flow of the operation of the etching apparatus.
FIG. 10 is a diagram showing another example of a discharge nozzle.
FIG. 11 is a view showing still another example of a discharge nozzle.
[Explanation of symbols]
Reference Signs List 1 etching apparatus 4 control unit 9 substrate 13 second transfer robot 14 chamber 21 container 23a rotating / elevating mechanism 31 measuring head 34 light source unit 35 spectroscope 41 arithmetic unit 51 discharge nozzle 52 processing liquid supply unit 95 processing liquid 311 incident unit 411 comparison Unit 412 Memory 511 Discharge ports S13 to S16, S24 to S27 Step

Claims (13)

A film thickness measuring device for measuring a film thickness on a substrate to be etched,
A light source for emitting light emitted to the substrate,
A light-receiving part into which light from the substrate is incident from an incident part,
A calculating unit for detecting a film thickness on the substrate based on an output from the light receiving unit,
With
A film thickness measuring device, wherein a space between a substrate and said incident part is filled with a processing liquid. The film thickness measuring device according to claim 1,
Further comprising a container for storing a processing solution in which the substrate is immersed,
The film thickness measuring device, wherein the incident part is in contact with the processing liquid in the container. The film thickness measuring device according to claim 1,
A film thickness measuring apparatus further comprising a supply unit for supplying a processing liquid between the incident unit and the substrate. The film thickness measuring device according to claim 3,
The film thickness measuring device, wherein the supply unit discharges a processing liquid toward the incident unit, and the processing liquid is guided from the incident unit to the substrate. The film thickness measuring device according to claim 4,
The film thickness measuring device, wherein the incident part is located above the substrate, and the treatment liquid falls from the incident part and is guided to the substrate. The film thickness measuring device according to claim 5,
The film thickness measuring device, wherein the supply section has at least one discharge port for discharging the processing liquid from a plurality of directions toward the incident section. The film thickness measuring device according to any one of claims 1 to 6, wherein
The arithmetic unit is
A storage unit that stores a reference spectral reflectance of a substrate on which a film having a predetermined thickness is formed,
A comparing unit that compares the spectral reflectance of the substrate derived from the output from the light receiving unit and the reference spectral reflectance,
A film thickness measuring device comprising: The film thickness measuring device according to any one of claims 1 to 7,
A film thickness measuring apparatus further comprising a rotation mechanism for rotating a substrate while keeping a normal direction of a main surface constant. An etching apparatus,
A processing unit having the film thickness measuring device according to any one of claims 1 to 8 and performing etching on a substrate;
A transport mechanism for transporting the substrate to the processing unit,
A control unit that stops etching in the processing unit based on a signal from the film thickness measurement device,
An etching apparatus comprising: A film thickness measuring method for measuring a film thickness on a substrate to be etched,
A step of filling the processing liquid between the incident portion and the substrate where light from the substrate is incident,
Irradiating the substrate with light, receiving light from the substrate through the incident portion, and acquiring a spectral intensity of the light,
Detecting a film thickness on the substrate based on the spectral intensity,
A film thickness measuring method comprising: The film thickness measuring method according to claim 10, wherein
The step of filling with the treatment liquid,
Immersing the substrate in a processing solution,
Contacting the incident portion with the treatment liquid,
A film thickness measuring method comprising: The film thickness measuring method according to claim 10, wherein
A film thickness measuring method, wherein a processing liquid is supplied between the substrate and the incident part in the step of filling with the processing liquid. The film thickness measuring method according to any one of claims 10 to 12, wherein
A film thickness measuring method, further comprising, before the step of obtaining the spectral intensity, rotating the substrate while keeping the normal direction of the main surface constant.

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