JP2004117876A5 - - Google Patents

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Publication number
JP2004117876A5
JP2004117876A5 JP2002281425A JP2002281425A JP2004117876A5 JP 2004117876 A5 JP2004117876 A5 JP 2004117876A5 JP 2002281425 A JP2002281425 A JP 2002281425A JP 2002281425 A JP2002281425 A JP 2002281425A JP 2004117876 A5 JP2004117876 A5 JP 2004117876A5
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Japan
Prior art keywords
group
hydrogen atom
alkyl group
acid
general formula
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Pending
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JP2002281425A
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Japanese (ja)
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JP2004117876A (en
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Priority to JP2002281425A priority Critical patent/JP2004117876A/en
Priority claimed from JP2002281425A external-priority patent/JP2004117876A/en
Publication of JP2004117876A publication Critical patent/JP2004117876A/en
Publication of JP2004117876A5 publication Critical patent/JP2004117876A5/ja
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Claims (4)

(A)アルカリ可溶性ポリマー、
(B)一般式(II)〜(IV)で表される化合物、及びアルコキシメチル化メラミン化合物から選ばれる少なくとも一つである、酸により架橋する架橋剤、
及び、
(C)活性光線又は放射線の照射により酸を発生する、下記一般式(I)で表される酸発生剤
を含有することを特徴とするネガ型レジスト組成物。
Figure 2004117876
一般式(II)中、
5は、各々独立に、水素原子、アルキル基又はアシル基を表す。
6〜R9は、各々独立に、水素原子、水酸基、アルキル基又はアルコキシル基を表す。
Xは、単結合、メチレン基又は酸素原子を表す。
一般式(III)及び(IV)中、
5は、各々独立に、水素原子、アルキル基又はアシル基を表す。
Figure 2004117876
一般式(I)中、
11〜R51は、同じでも異なっていてもよく、水素原子、ニトロ基、ハロゲン原子、アルキル基、アルコキシ基、アルキルオキシカルボニル基、アリール基若しくはアシルアミノ基を表し、R11〜R51のうち少なくとも2つが結合して環構造を形成してもよい。
61及びR71は、同じでも異なっていてもよく、水素原子、シアノ基、アルキル基若しくはアリール基を表す。
1及びY2は、同じでも異なっていてもよく、アルキル基又はアルケニル基を表す。但し、Y1及びY2は、両方がアルキル基である場合に、Y1及びY2の少なくとも一方のアルキル基が水酸基、エーテル連結基若しくはスルフィド連結基を有しているか、或いはY1及びY2の両方のアルキル基が炭素数2以上である。
1又はY2は結合してS+とともに環を形成してもよい。
11〜R51の少なくとも1つとY1又はY2の少なくとも一つが結合して環を形成してもよい。
11〜R51の少なくとも1つとR61又はR71の少なくとも1つが結合して環を形成してもよい。
また、R11〜R71のいずれか又はY1若しくはY2のいずれかの位置で、連結基を介して結合し、式(I)の構造を2つ以上有していてもよい。
-は、非求核性アニオンを表す。
(A) an alkali-soluble polymer,
(B) a crosslinking agent that crosslinks with an acid, which is at least one selected from compounds represented by general formulas (II) to (IV) and alkoxymethylated melamine compounds;
as well as,
(C) A negative resist composition comprising an acid generator represented by the following general formula (I) that generates an acid upon irradiation with an actinic ray or radiation.
Figure 2004117876
In general formula (II),
R 5 each independently represents a hydrogen atom, an alkyl group or an acyl group.
R 6 to R 9 each independently represents a hydrogen atom, a hydroxyl group, an alkyl group or an alkoxyl group.
X represents a single bond, a methylene group or an oxygen atom.
In general formulas (III) and (IV),
R 5 each independently represents a hydrogen atom, an alkyl group or an acyl group.
Figure 2004117876
In general formula (I),
R 11 to R 51 may be the same or different and each represents a hydrogen atom, a nitro group, a halogen atom, an alkyl group, an alkoxy group, an alkyloxycarbonyl group, an aryl group, or an acylamino group, and R 11 to R 51 At least two of them may combine to form a ring structure.
R 61 and R 71 may be the same or different and each represents a hydrogen atom, a cyano group, an alkyl group or an aryl group.
Y 1 and Y 2 may be the same or different and each represents an alkyl group or an alkenyl group. However, Y 1 and Y 2, when both are alkyl groups, at least one alkyl group of Y 1 and Y 2 has a hydroxyl group, an ether linkage group or a sulfide linkage group, or Y 1 and Y 2 of both alkyl groups is 2 or more carbon atoms.
Y 1 or Y 2 may be bonded to form a ring together with S + .
At least one of R 11 to R 51 may be bonded to at least one of Y 1 or Y 2 to form a ring.
At least one of R 11 to R 51 may be bonded to at least one of R 61 or R 71 to form a ring.
Further, it may be bonded via a linking group at any position of R 11 to R 71 or at any position of Y 1 or Y 2 to have two or more structures of the formula (I).
X represents a non-nucleophilic anion.
更に(D)含窒素塩基性化合物を含有することを特徴とする請求項1に記載のネガ型レジスト組成物。  The negative resist composition according to claim 1, further comprising (D) a nitrogen-containing basic compound. 更に(E)一般式(I)で表される酸発生剤以外の活性光線又は放射線の照射により酸を発生する酸発生剤を含有することを特徴とする請求項1又は2に記載のネガ型レジスト組成物。  Furthermore, (E) The negative type | mold of Claim 1 or 2 containing the acid generator which generate | occur | produces an acid by irradiation of actinic rays or radiation other than the acid generator represented by general formula (I) Resist composition. 請求項1〜3のいずれかに記載のネガ型レジスト組成物によりレジスト膜を形成し、当該レジスト膜を露光、現像することを特徴とするパターン形成方法。  A pattern forming method, comprising: forming a resist film from the negative resist composition according to claim 1; and exposing and developing the resist film.
JP2002281425A 2002-09-26 2002-09-26 Negative resist composition Pending JP2004117876A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002281425A JP2004117876A (en) 2002-09-26 2002-09-26 Negative resist composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002281425A JP2004117876A (en) 2002-09-26 2002-09-26 Negative resist composition

Publications (2)

Publication Number Publication Date
JP2004117876A JP2004117876A (en) 2004-04-15
JP2004117876A5 true JP2004117876A5 (en) 2005-09-29

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JP2002281425A Pending JP2004117876A (en) 2002-09-26 2002-09-26 Negative resist composition

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Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4121388B2 (en) * 2003-01-30 2008-07-23 富士フイルム株式会社 Positive resist composition and compound that generates acid upon irradiation with actinic rays
JP4880523B2 (en) * 2006-07-24 2012-02-22 信越化学工業株式会社 Negative resist material and pattern forming method using the same
JP4990344B2 (en) * 2009-12-04 2012-08-01 富士フイルム株式会社 Negative resist composition and pattern forming method using the same
JP5835600B2 (en) * 2012-02-01 2015-12-24 エルジー・ケム・リミテッド Novel compound, photosensitive composition containing the same, and photosensitive material
WO2023127692A1 (en) * 2021-12-28 2023-07-06 東京応化工業株式会社 Resist composition and method for forming resist pattern

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