JP2003121999A5 - - Google Patents

Download PDF

Info

Publication number
JP2003121999A5
JP2003121999A5 JP2001315287A JP2001315287A JP2003121999A5 JP 2003121999 A5 JP2003121999 A5 JP 2003121999A5 JP 2001315287 A JP2001315287 A JP 2001315287A JP 2001315287 A JP2001315287 A JP 2001315287A JP 2003121999 A5 JP2003121999 A5 JP 2003121999A5
Authority
JP
Japan
Prior art keywords
group
fluorine atom
acid
branched
substituted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001315287A
Other languages
Japanese (ja)
Other versions
JP3856290B2 (en
JP2003121999A (en
Filing date
Publication date
Application filed filed Critical
Priority to JP2001315287A priority Critical patent/JP3856290B2/en
Priority claimed from JP2001315287A external-priority patent/JP3856290B2/en
Publication of JP2003121999A publication Critical patent/JP2003121999A/en
Publication of JP2003121999A5 publication Critical patent/JP2003121999A5/ja
Application granted granted Critical
Publication of JP3856290B2 publication Critical patent/JP3856290B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Claims (6)

（Ａ１）下記一般式（１）で表される構造を有する、活性光線又は放射線の照射により酸を発生する化合物
（Ｂ）アルカリ可溶性樹脂
（Ｃ）酸により架橋する架橋剤
を含有することを特徴とするネガ型レジスト組成物。
Figure 2003121999
式中、Ｗは、−ＣＨ2−、−ＣＹＨ−、−ＮＨ−を表す。Ｙは、置換又は無置換の、アリール基、直鎖、分岐鎖、あるいは環状アルキル基を表す。
Ｒ1a〜Ｒ8aは、各々独立に、水素原子、ハロゲン原子、水酸基、チオール基、ニトロ基、シアノ基、カルボキシル基、１級アミノ基、直鎖、分岐鎖２級又は３級アミノ基、アルキル基、又はアルコキシル基より選択された基である。(A1) A compound having a structure represented by the following general formula (1), which generates an acid upon irradiation with actinic rays or radiation (B), an alkali-soluble resin (C), and a crosslinking agent that crosslinks with an acid. A negative resist composition.
Figure 2003121999
 In the formula, W represents —CH 2 —, —CYH—, or —NH—. Y represents a substituted or unsubstituted aryl group, straight chain, branched chain, or cyclic alkyl group.
R 1a to R 8a are each independently a hydrogen atom, a halogen atom, a hydroxyl group, a thiol group, a nitro group, a cyano group, a carboxyl group, a primary amino group, a straight chain, a branched secondary or tertiary amino group, an alkyl Or a group selected from an alkoxyl group. 更に、（Ａ２）下記一般式（Ｉ）〜一般式（III）で表される構造を有する、活性光線又は放射線の照射により酸を発生する化合物を含有することを特徴とする請求項１に記載のネガ型レジスト組成物。
Figure 2003121999
一般式（Ｉ）〜（III）において、Ｒ1〜Ｒ37は、同一又は異なって、水素原子、直鎖状、分岐状あるいは環状アルキル基、直鎖状、分岐状あるいは環状アルコキシ基、ヒドロキシル基、ハロゲン原子、又は−Ｓ−Ｒ38基を表す。Ｒ38は、直鎖状、分岐状あるいは環状アルキル基又はアリール基を表す。
Ｘ-は、
少なくとも１個のフッ素原子、
少なくとも１個のフッ素原子で置換された直鎖状、分岐状あるいは環状アルキル基、
少なくとも１個のフッ素原子で置換された直鎖状、分岐状あるいは環状アルコキシ基、
少なくとも１個のフッ素原子で置換されたアシル基、
少なくとも１個のフッ素原子で置換されたアシロキシ基、
少なくとも１個のフッ素原子で置換されたスルホニル基、
少なくとも１個のフッ素原子で置換されたスルホニルオキシ基、
少なくとも１個のフッ素原子で置換されたスルホニルアミノ基、
少なくとも１個のフッ素原子で置換されたアリール基、
少なくとも１個のフッ素原子で置換されたアラルキル基、及び
少なくとも１個のフッ素原子で置換されたアルコキシカルボニル基、
から選択された少なくとも１種を有するベンゼンスルホン酸、ナフタレンスルホン酸、又はアントラセンスルホン酸のアニオンを示す。Furthermore, (A2) the compound which generate | occur | produces an acid by irradiation of actinic light or a radiation which has a structure represented by the following general formula (I)-general formula (III) is contained. Negative resist composition.
Figure 2003121999
 In the general formulas (I) to (III), R 1 to R 37 are the same or different and each represents a hydrogen atom, a linear, branched or cyclic alkyl group, a linear, branched or cyclic alkoxy group, or a hydroxyl group. , A halogen atom, or a —S—R 38 group. R38 represents a linear, branched or cyclic alkyl group or an aryl group.
X - is,
At least one fluorine atom,
A linear, branched or cyclic alkyl group substituted with at least one fluorine atom,
A linear, branched or cyclic alkoxy group substituted with at least one fluorine atom,
An acyl group substituted with at least one fluorine atom,
An acyloxy group substituted with at least one fluorine atom,
A sulfonyl group substituted with at least one fluorine atom,
A sulfonyloxy group substituted with at least one fluorine atom,
A sulfonylamino group substituted with at least one fluorine atom,
An aryl group substituted with at least one fluorine atom,
An aralkyl group substituted with at least one fluorine atom, and an alkoxycarbonyl group substituted with at least one fluorine atom;
An anion of benzenesulfonic acid, naphthalenesulfonic acid, or anthracenesulfonic acid having at least one selected from （Ｃ）酸により架橋する架橋剤が、一般式（２）〜（４）で表される化合物、及びアルコキシメチル化メラミン化合物から選ばれる少なくとも一つであることを特徴とする請求項１に記載のネガ型レジスト組成物。
Figure 2003121999
式（２）〜（４）におけるＲ5bは、各々独立に、水素原子、アルキル基又はアシル基を表す。
式（２）におけるＲ6b〜Ｒ9bは、各々独立に、水素原子、水酸基、アルキル基又はアルコキシル基を表す。
Ｘは、単結合、メチレン基又は酸素原子を表す。(C) The crosslinking agent which crosslinks with an acid is at least one selected from compounds represented by general formulas (2) to (4) and alkoxymethylated melamine compounds. Negative resist composition.
Figure 2003121999
 R 5b in formulas (2) to (4) each independently represents a hydrogen atom, an alkyl group or an acyl group.
R < 6b > -R < 9b > in Formula (2) represents a hydrogen atom, a hydroxyl group, an alkyl group, or an alkoxyl group each independently.
X represents a single bond, a methylene group or an oxygen atom. （Ｃ）酸により架橋する架橋剤が、分子内にベンゼン環を１〜６個有するフェノール誘導体であり、ヒドロキシメチル基及び／又はアルコキシメチル基を分子内全体で２個以上有し、これらの基をいずれかのベンゼン環原子団に結合している化合物であることを特徴とする請求項１又は２に記載のネガ型レジスト組成物。(C) The crosslinking agent that crosslinks with an acid is a phenol derivative having 1 to 6 benzene rings in the molecule, and has two or more hydroxymethyl groups and / or alkoxymethyl groups in the molecule, and these groups The negative resist composition according to claim 1, which is a compound in which is bonded to any benzene ring atomic group. 更に、（Ｄ）有機塩基性化合物を含有することを特徴とする請求項１〜４のいずれかに記載のネガ型レジスト組成物。The negative resist composition according to claim 1, further comprising (D) an organic basic compound. 請求項１〜５のいずれかに記載のネガ型レジスト組成物によりレジスト膜を形成し、当該レジスト膜を露光、現像することを特徴とするパターン形成方法。A pattern forming method comprising: forming a resist film from the negative resist composition according to claim 1; and exposing and developing the resist film.
JP2001315287A 2001-10-12 2001-10-12 Negative resist composition Expired - Fee Related JP3856290B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001315287A JP3856290B2 (en) 2001-10-12 2001-10-12 Negative resist composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001315287A JP3856290B2 (en) 2001-10-12 2001-10-12 Negative resist composition

Publications (3)

Publication Number Publication Date
JP2003121999A JP2003121999A (en) 2003-04-23
JP2003121999A5 true JP2003121999A5 (en) 2005-04-07
JP3856290B2 JP3856290B2 (en) 2006-12-13

Family

ID=19133478

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001315287A Expired - Fee Related JP3856290B2 (en) 2001-10-12 2001-10-12 Negative resist composition

Country Status (1)

Country Link
JP (1) JP3856290B2 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4792299B2 (en) 2006-02-07 2011-10-12 富士フイルム株式会社 Novel sulfonium compound, photosensitive composition containing the compound, and pattern forming method using the photosensitive composition
JP4678383B2 (en) * 2007-03-29 2011-04-27 信越化学工業株式会社 Chemically amplified negative resist composition and pattern forming method
JP5459026B2 (en) * 2010-03-31 2014-04-02 Ｊｓｒ株式会社 Radiation sensitive resin composition
JP6088827B2 (en) * 2013-01-10 2017-03-01 富士フイルム株式会社 Negative resist composition, resist film and pattern forming method using the same, and mask blanks provided with the resist film
JP5812030B2 (en) * 2013-03-13 2015-11-11 信越化学工業株式会社 Sulfonium salt and polymer compound, resist material and pattern forming method
JP6313604B2 (en) * 2014-02-05 2018-04-18 富士フイルム株式会社 Actinic ray-sensitive or radiation-sensitive resin composition, actinic ray-sensitive or radiation-sensitive film, mask blank provided with actinic ray-sensitive or radiation-sensitive film, pattern formation method, and electronic device manufacturing method
JP6267982B2 (en) 2014-02-05 2018-01-24 富士フイルム株式会社 Actinic ray sensitive or radiation sensitive resin composition, actinic ray sensitive or radiation sensitive film, mask blanks with actinic ray sensitive or radiation sensitive film, pattern forming method, electronic device manufacturing method, novel compound, And method for producing novel compound
JP6286227B2 (en) 2014-02-21 2018-02-28 富士フイルム株式会社 Actinic ray-sensitive or radiation-sensitive resin composition, actinic ray-sensitive or radiation-sensitive film, mask blank provided with actinic ray-sensitive or radiation-sensitive film, pattern formation method, and electronic device manufacturing method
JP6209103B2 (en) * 2014-02-25 2017-10-04 富士フイルム株式会社 Actinic ray-sensitive or radiation-sensitive resin composition, resist film using the same, resist-coated mask blank, resist pattern forming method, and photomask

Similar Documents

Publication Publication Date Title
EP2360153B1 (en) Photoacid generators and photoresists comprising same
JP2001330947A5 (en)
JP2009258723A5 (en)
JP2004004834A5 (en)
JP2012108527A5 (en)
EP2413194A3 (en) Pattern forming method
TW200516344A (en) Photoacid generators
KR20080030082A (en) Sulphonium salt initiators
JP2004101706A5 (en)
JP2006276760A5 (en)
JP2002500255A5 (en)
JP2001183837A5 (en)
JP2003121999A5 (en)
JP2004310004A5 (en)
JP2001051417A5 (en)
JP2004271629A5 (en)
JP2002202608A5 (en)
JP2001249458A5 (en)
JP2000231194A5 (en)
JP2003316004A5 (en)
JP2004101642A5 (en)
JP2000187329A5 (en)
JP2004077810A5 (en)
JP2003295438A5 (en)
JP2005043819A5 (en)