JP2004111889A - Crystal oscillator lid and method for manufacturing the same - Google Patents

Crystal oscillator lid and method for manufacturing the same Download PDF

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Publication number
JP2004111889A
JP2004111889A JP2002312389A JP2002312389A JP2004111889A JP 2004111889 A JP2004111889 A JP 2004111889A JP 2002312389 A JP2002312389 A JP 2002312389A JP 2002312389 A JP2002312389 A JP 2002312389A JP 2004111889 A JP2004111889 A JP 2004111889A
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Prior art keywords
lid
weight
case
crystal resonator
layer
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JP2002312389A
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Japanese (ja)
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Keishin Kan
漢 奎辰
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KOSTECSYS CO Ltd
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KOSTECSYS CO Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/1615Shape
    • H01L2924/16195Flat cap [not enclosing an internal cavity]

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  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Oscillators With Electromechanical Resonators (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a crystal oscillator lid capable of extremely easily connecting a lid to the case of a crystal oscillator without any failure, and improving productivity while preventing the production of any poisonous gas, and thinning the case, and to provide a method for manufacturing the crystal oscillator lid. <P>SOLUTION: This lid 20 of a crystal oscillator 1 tightly seals a ceramic case 10 in which a crystal oscillating piece 30 is housed. The lid is provided with a metallic thin board of the substrate of the lid 20, an Ni plated layer 20b formed only on one surface of the case outside face side of the metallic thin board, and a joint layer 21 formed on the case sealing face side of the metallic thin board. The Ni plated layer 20b is formed only on one side so that any case failure or gas generation in sealing can be prevented, and convenient and efficient junction can be executed. <P>COPYRIGHT: (C)2004,JPO

Description

【0001】
【発明の属する技術分野】
本発明は,セラミックケースに組み立てられる水晶振動子に係り,セラミックケースを密閉する水晶振動子リッド及び水晶振動子リッドの製造方法に関するものである。
【0002】
【従来の技術】
一般に水晶振動子は薄い片の水晶振動板の両面に導体電極を連結し,電気的信号が印加され,圧電効果により振動しながら安定した周波数を供給するもので,発振器やフィルタなどに用いられる。
【0003】
従来,水晶振動子1は,図4に示すように,セラミック絶縁体11の間に電極回路12が多層に配列されたケース10の内部に,水晶振動片30が収納されて,電線31で電極に連結されている。ケース10の開口部には,コバルト(Co)とニッケル(Ni)の合金であるKovar(コバール)からなるリッド20が接合され,内部を封入している。
【0004】
しかし,前述した形態の水晶振動子1は,セラミックのケース10開口部に,セラミックとは異質な金属のリッド20を接合させる必要があるので,相応な問題が発生した。
【0005】
リッド20の材質は鉄5%,Ni29%,Co17%を含有したペルニコ系の合金であるコバールを主に使用する。コバールは,引張係数,収縮係数,熱膨張係数がセラミックと類似しているため,セラミックとの接合時に多く用いられる。しかしこの時,リッド20をケース10に接合させるためには約800℃の熱を加える必要があり,この際の高熱が,ケース10に収納された水晶振動片30を変形させるため,リッド20をケース10に直接接合させることはできなかった。
【0006】
そのため,ケース10の開口部に銀(Ag)メッキされたリングを置き,200〜400℃の熱を加えてリングのメッキ膜を溶融させてセラミックに接合させる低温溶接方法が使用されている。しかし,このように銀メッキされたリングを使用する場合には,水晶振動子の組み立てに用いられる部品と作業工程の数が増えることになり,また高価な銀メッキリングを使用するため,製造原価が上昇する。また,水晶振動子の封入ケース全体の厚みが厚くなり,小型化及びスリム化の妨げとなっていた。
【0007】
従って,高価なリングを使用せずに,図4に示すように,リッド20の封入面に低温で溶融する接合層21を形成し,リッド20をセラミックのケース10に直接接合させる技術が,例えば特許文献1〜3に提案されていた。
【0008】
【特許文献1】
特許出願第2001−0072177号
【特許文献2】
特許出願第2002−0023302号
【特許文献3】
特許出願第2002−0034279号
【0009】
【発明が解決しようとする課題】
しかし,上記の方法では,リッド20の外部にNiメッキ層20aが形成され,結局リッド20と接合層21との間にNiメッキ層20aが位置することになるので,接合層21を電気溶接すると,電流がNiメッキ層20aを流れ,この時に発生する過大電流によりセラミックのケース10に亀裂が発生し,不良率が高くなる問題があった。
【0010】
また,Niメッキ層20aは電気溶接時の溶融反応により多量のリン(P)含有ガスを発生させる。ガスがケース10の内部に流入すると,水晶振動片30に致命的な影響を与え,ガスが外部に流出すると,リッド20の接着力が弱化するとともに,作業者の健康を害するという問題点があった。
【0011】
本発明は,従来の水晶振動子リッド及び水晶振動子リッドの製造方法が有する上記問題点に鑑みてなされたものであり,本発明の目的は,水晶振動子のケースにリッドを極めて簡便に不良なく接合させることができ,生産性を高めることができると同時に有毒なガスを発生することなく,またケースの薄型化が可能な,新規かつ改良された水晶振動子リッド及び水晶振動子リッドの製造方法を提供することにある。
【0012】
【課題を解決するための手段】
上記課題を解決するため,本発明によれば,水晶振動片が収納されるセラミックケースを密閉する水晶振動子リッドにおいて;リッドの母材となる金属薄板と,金属薄板のケース外部面側の片面だけに形成されたNiメッキ層と,金属薄板の前記ケース封入面側に形成された接合層とを含んでいることを特徴とする水晶振動子リッドが提供される。
【0013】
また,上記水晶振動子リッドを得るために,リッドの母材となる金属薄板の片面にNiメッキ層を形成する工程と,Niメッキ層を外側にして,金属薄板と接合層とをアイドルローラを用いて1体化する工程と,1体化した金属薄板をヒータが接続された一対の接合ローラを用いて高温で加圧して金属薄板と接合層とを接合する工程と,接合した金属薄板を一対の加圧ローラを用いて厚みを一定にする工程と,厚みが一定となった金属薄板をプレスを用いてリッドの形状に打ち抜く工程とを含む水晶振動子リッドの製造方法が提供される。この時,ヒータが接続された一対の接合ローラは,接合層の融点より低い温度に設定することが好ましい。
【0014】
こうして得られた水晶振動子リッドを用いて水晶振動片をセラミックケースに封入する際には,リッドの封入面にNiメッキ層はなく,接合層のみが形成されているので,リッドを電気溶接する際,金属合金の接合層に直接電気的作用を加えることができ,簡便で,効率的な溶接を行うことができる。さらに,電流がNiメッキ層を流れる際に,セラミックケースに亀裂が発生する問題点や,Niメッキ層が溶融した際に発生するガスで水晶振動片に悪影響を与える問題点や,ガスによりリッドの接着力が弱化したり,作業者の健康を害するなどの問題点も解消することができる。
【0015】
ここで,金属薄板の材質は,熱膨張係数や熱収縮係数がケースのセラミックと類似したコバール合金であることが好ましい。また,接合層は,ケースへのリッド接合時に内部の水晶振動片に影響を及ぼさない温度で接合できる,低温の熱に溶融する金属合金からなることが好ましい。低温の熱に溶融する金属合金として,例えば,Sn78〜82重量%と,Zn9〜11重量%と,Ag9〜11重量%とから構成された合金を用いることができる。
【0016】
また,接合層としては溶接特性の優れた,例えば,Ag68〜72重量%と,Cu24〜25重量%と,Bi2〜4重量%と,Sn2〜3重量%と,Ge0.02〜0.4重量%とから構成された合金を用いることもできる。
【0017】
【発明の実施の形態】
以下に添付図面を参照しながら,本実施形態にかかる水晶振動子リッド及び水晶振動子リッドの製造方法について詳細に説明する。なお,本明細書,及び図面において,実質的に同一の機能構成を有する構成要素については,同一の符号を付することにより重複説明を省略する。
【0018】
図1は,本実施の形態による水晶振動子1のリッドと封入する水晶振動片が組み込まれたセラミックケースとを示す分解斜視図であり,図2(a)は封入前の断面図,図2(b)は封入後の断面図である。図1〜図2に示すように,ケース10にはセラミック絶縁体11の間に電極回路12が多層に配列され,その内部には収納空間が形成されている。前記ケース10の内部底に備えられた電極回路12には水晶振動片30が固定されており,この水晶振動片30は両側電極回路12と電線31に連結されている。
【0019】
ケース10の開口部には,例えば母材の金属薄板として,鉄(Fe),Ni,Coの合金であるコバールを用いて加工したリッド20が接合され,ケース10内部を密閉する。ただし本実施の形態におけるリッド20では,ケース10の封入面と反対側のケース外部面にのみメッキ層を形成し,封入面にはメッキ層を形成せず,封入面に接合層21を形成して,電気溶接時に発生する電流の衝撃を最小化し,また,低温の熱によってリッド20をケース10上部に直接接合させることを可能にしている。
【0020】
即ち,前記リッド20は,金属合金からなる金属薄板のケース外部面にNiメッキ層20bが形成されており,メッキ層が形成されていないリッド20の封入面には一定の厚みの接合層21が形成されている。勿論,Niメッキ層20bはリッド20の一面にのみメッキ膜を形成するための特殊メッキ方法を採用する。
【0021】
接合層21は,低温の熱(200〜400℃)によりケース10の開口部に直接熱融着が可能な金属合金であることが望ましい。こうしてNiメッキ層20bが形成されていないリッド20の封入面に接合層21が形成されているため,リッド20を電気溶接した際,電流が直接金属合金接合層21に電気的作用を加えて溶接されるので,極めて効率的な溶接が行われる。
【0022】
従って,電流がNiメッキ層20aを通過する際に発生する,ケース10に亀裂が発生する問題点と,Niメッキ層20aが溶融反応を起こしてP含有ガスを発生させるため,水晶振動片30に致命的な影響を与える問題点と,ガスが外部に流出して,リッド20の接着力が弱化し,作業者の健康を害するなどの問題点とが解消され,生産性の高い水晶振動子を得ることができる。
【0023】
また,金属合金の接合層21によってリッド20が直接ケース10に接合されるので,従来のように銀メッキされたリングを使用することなく,リッド20をケース10上に置き,低温(200〜400℃)の熱を加えるだけで,接合層21が溶融しながらケース10開口部の周縁に強固に接着される。そのため,リッド20の接合作業が極めて簡便でありながらも,全体的な厚みが薄くなって水晶振動子の小型化及びスリム化を実現することができ,高価な銀メッキリングも使用しないので,製造原価を安価にすることができる。
【0024】
一方,接合層21に用いられる金属合金は多様に構成することができる。例えば,スズ(Sn)78〜82重量%,亜鉛(Zn)9〜11重量%,Ag9〜11重量%を主成分とする合金から構成されることが好ましい。
【0025】
このようにSnを主成分とし,ZnとAgが適正量添加された接合層21は,約200〜400℃の低温でも容易に溶融し,溶接特性が優れているのみならず,融点,湿潤性などを始めとして,機械的特性,電気的特性,熱的特性なども優れており,有毒性も殆どないので環境汚染を引き起こすおそれもない。こうして,ケース10開口部にリッド20を強固に接合させることができるとともに,接合作業が極めて簡便で,高品質の水晶振動子1を提供することができる。
【0026】
従って,銀メッキされたリングを使用することなく,リッド20をケース10上に置き,コンベヤを介して移動させながら,電極ローラを用いてリッド20を押さえると,電極ローラを介して接合層21に直接電流が印加され,接触抵抗により,接合層21が加熱及び溶融しながら溶接される。または,レーザ光線を利用して接合層21を溶接すると,接合層21が溶融しながらケース10開口部の周縁に強固に接着するので,リッド20の接合作業が簡便でありながらも,封入ケースの厚みが薄くなって,水晶振動子の小型化及びスリム化を実現することができる。
【0027】
一方,接合層21の金属合金は他の方法で形成することもできる。例えば,Ag68〜72重量%,銅(Cu)24〜25重量%,ビスマス(Bi)2〜4重量%,Sn2〜3重量%,ゲルマニウム(Ge)0.02〜0.4重量%を主成分とする合金から構成することもできる。
【0028】
このようにAgとCuを主成分とする接合層21は760℃〜800℃の高温で溶融するが,溶接特性が優れているのみならず,接合強度が極めて優秀であり,疲労寿命が長く,湿潤性が向上して酸化を防止することができ,ケース10上部にリッド20を強固に接合させることができる利点がある。
【0029】
一方,接合層21をリッド20に形成する方法を説明する。図3の説明図に示すように,例えば母材としてコバールを用いたリッド20の片面にNiメッキ層20bを形成した金属薄板をNiメッキ層20bがリールの外側になるようにリール40aに巻き,薄い板状の合金からなる接合層21をリール40bに巻いた後,Niメッキ層20bを形成したリッド20と接合層21をアイドルローラ41を通過させて一つになるようにする。
【0030】
次に,ヒータ付きの一対の接合ローラ42の間を通過させながら高温で加圧し,リッド20のメッキ層20bが形成されていない面に接合層21を熱間圧延で接合させた後,一対の加圧ローラ43の間を通過させて一定の厚みを維持できるようした後,プレス44でパンチしてその封入面に接合層21が形成された一定の大きさのリッド20を製造する。
【0031】
接合ローラ42などに装着されたヒータの温度は自動調節され,その温度は接合層21の融点より若干低い温度とする。このように接合ローラ42の間を通過するリッド20と接合層21を高温で加圧させる熱間圧延方式を用いることにより,接合層21の接合作業が極めて簡便でありながら,生産性を高めることができる。
【0032】
以上,添付図面を参照しながら本実施の形態にかかる水晶振動子リッド及び水晶振動子リッドの製造方法の好適な実施形態について説明したが,本発明はかかる例に限定されない。当業者であれば,特許請求の範囲に記載された技術的思想の範疇内において各種の変更例または修正例に想到し得ることは明らかであり,それらについても当然に本発明の技術的範囲に属するものと了解される。
【0033】
【発明の効果】
以上説明したように本発明によれば,リッドの封入面にNiメッキ層は形成せずに接合層のみが形成されているので,リッドを電気溶接する際,金属合金の接合層に直接電気的作用を加えることができ,極めて簡便で,効率的な溶接を行うことができる。従って,電流がNiメッキ層を流れる際に,セラミックケースに亀裂が発生する問題点や,Niメッキ層が溶融した際に発生するガスで水晶振動片に悪影響を与える問題点や,ガスによりリッドの接着力が弱化したり,作業者の健康を害するなどの問題点も解消でき,安価で信頼性の高い水晶振動子を提供することができる。
【図面の簡単な説明】
【図1】本実施の形態にかかる水晶振動子のリッドとセラミックケースの分解斜視図である。
【図2】本実施の形態にかかる水晶振動子のリッドとセラミックケースの接合過程を示す断面図であり,(a)は接合前の断面図,(b)は接合後の断面図である。
【図3】本実施の形態にかかる水晶振動子リッドの製造過程を示す概略的な装置の説明図である。
【図4】従来の水晶振動子のリッドとセラミックケースの接合前の過程を示す断面図である。
【符号の説明】
1    水晶振動子
10   ケース
11   セラミック絶縁体
12   電極回路
20   リッド
20b  Niメッキ層
21   接合層
30   水晶振動片
31   電線
[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a crystal resonator assembled in a ceramic case, and more particularly to a crystal resonator lid for sealing a ceramic case and a method for manufacturing the crystal resonator lid.
[0002]
[Prior art]
In general, a quartz resonator connects conductive electrodes to both surfaces of a thin piece of quartz diaphragm, applies an electric signal, and supplies a stable frequency while vibrating by a piezoelectric effect, and is used for an oscillator, a filter, and the like.
[0003]
Conventionally, as shown in FIG. 4, a crystal resonator 1 has a crystal resonator element 30 housed in a case 10 in which electrode circuits 12 are arranged in a multilayer between ceramic insulators 11, It is connected to. A lid 20 made of Kovar, which is an alloy of cobalt (Co) and nickel (Ni), is joined to the opening of the case 10 to seal the inside.
[0004]
However, in the quartz resonator 1 of the above-described embodiment, since a lid 20 made of a metal different from ceramic needs to be joined to the opening of the ceramic case 10, a corresponding problem has occurred.
[0005]
The material of the lid 20 is mainly Kovar, which is a pernico-based alloy containing 5% of iron, 29% of Ni, and 17% of Co. Kovar is often used when joining with ceramic because it has similar tensile, contraction, and thermal expansion coefficients to ceramic. However, at this time, in order to join the lid 20 to the case 10, it is necessary to apply heat of about 800 ° C. At this time, since the high heat deforms the crystal vibrating piece 30 stored in the case 10, the lid 20 is It could not be directly joined to the case 10.
[0006]
Therefore, a low-temperature welding method is used in which a ring plated with silver (Ag) is placed in the opening of the case 10 and heat is applied at 200 to 400 ° C. to melt the ring plating film and join the ring to the ceramic. However, when such a silver-plated ring is used, the number of parts and work steps used for assembling the crystal unit is increased, and the production cost is increased due to the use of an expensive silver-plated ring. Rises. In addition, the thickness of the entire enclosing case of the crystal unit is increased, which hinders miniaturization and slimming.
[0007]
Therefore, as shown in FIG. 4, a technique for forming a bonding layer 21 that melts at a low temperature on the sealing surface of the lid 20 and directly bonding the lid 20 to the ceramic case 10 without using an expensive ring is, for example, shown in FIG. It has been proposed in Patent Documents 1 to 3.
[0008]
[Patent Document 1]
Patent application No. 2001-0072177 [Patent document 2]
Patent application No. 2002-0023302 [Patent document 3]
Patent Application No. 2002-0034279
[Problems to be solved by the invention]
However, in the above method, the Ni plating layer 20a is formed outside the lid 20 and the Ni plating layer 20a is located between the lid 20 and the bonding layer 21. When the current flows through the Ni plating layer 20a, a crack occurs in the ceramic case 10 due to the excessive current generated at this time.
[0010]
In addition, the Ni plating layer 20a generates a large amount of a phosphorus (P) -containing gas by a melting reaction at the time of electric welding. When the gas flows into the case 10, it has a fatal effect on the crystal vibrating piece 30, and when the gas flows out, the adhesive strength of the lid 20 is weakened and the health of the worker is impaired. Was.
[0011]
SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems of the conventional crystal resonator lid and the method of manufacturing the crystal resonator lid, and an object of the present invention is to attach a lid to a crystal resonator case in a very simple manner. Of a new and improved crystal resonator lid and a crystal resonator lid that can be joined without any problems, increase productivity, generate no toxic gas, and reduce the thickness of the case It is to provide a method.
[0012]
[Means for Solving the Problems]
According to the present invention, there is provided a crystal resonator lid for sealing a ceramic case accommodating a crystal resonator element; a metal thin plate serving as a base material of the lid, and one surface of the metal thin plate on an outer surface side of the case. And a bonding layer formed on the case enclosing surface side of the thin metal plate.
[0013]
Further, in order to obtain the above-mentioned crystal resonator lid, a step of forming a Ni plating layer on one side of a thin metal plate serving as a base material of the lid, and an idle roller in which the Ni thin plate and the bonding layer are formed with the Ni plating layer outside. Using a pair of joining rollers to which a heater is connected to join the sheet metal and the joining layer by pressing at a high temperature, and joining the joined sheet metal. A method for manufacturing a crystal resonator lid includes a step of making a thickness constant using a pair of pressure rollers and a step of punching a metal sheet having a constant thickness into a lid shape using a press. At this time, it is preferable that the pair of joining rollers to which the heater is connected be set to a temperature lower than the melting point of the joining layer.
[0014]
When the crystal resonator element is sealed in the ceramic case using the crystal resonator lid thus obtained, the lid is electrically welded because there is no Ni plating layer on the sealing surface of the lid and only the bonding layer is formed. At this time, an electric action can be directly applied to the joining layer of the metal alloy, and simple and efficient welding can be performed. Furthermore, when current flows through the Ni plating layer, cracks occur in the ceramic case, gas generated when the Ni plating layer is melted has an adverse effect on the quartz vibrating piece, Problems such as weakening of adhesive strength and harm to worker's health can be solved.
[0015]
Here, the material of the metal sheet is preferably a Kovar alloy having a coefficient of thermal expansion and a coefficient of thermal contraction similar to that of the ceramic of the case. The joining layer is preferably made of a metal alloy that can be joined at a temperature that does not affect the internal quartz-crystal vibrating piece when the lid is joined to the case and that melts at low temperature. For example, an alloy composed of 78 to 82% by weight of Sn, 9 to 11% by weight of Zn, and 9 to 11% by weight of Ag can be used as the metal alloy that is melted by low-temperature heat.
[0016]
The bonding layer has excellent welding characteristics, for example, 68 to 72% by weight of Ag, 24 to 25% by weight of Cu, 2 to 4% by weight of Bi, 2 to 3% by weight of Sn, and 0.02 to 0.4% of Ge. % Can also be used.
[0017]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, a crystal resonator lid and a method of manufacturing the crystal resonator lid according to the present embodiment will be described in detail with reference to the accompanying drawings. In this specification and the drawings, components having substantially the same function and configuration are denoted by the same reference numerals, and redundant description is omitted.
[0018]
FIG. 1 is an exploded perspective view showing a lid of a crystal resonator 1 according to the present embodiment and a ceramic case in which a crystal resonator element to be enclosed is incorporated. FIG. (B) is a sectional view after sealing. As shown in FIGS. 1 and 2, the case 10 has a multilayer structure in which electrode circuits 12 are arranged between ceramic insulators 11, and a housing space is formed therein. A crystal vibrating piece 30 is fixed to the electrode circuit 12 provided on the inner bottom of the case 10, and the crystal vibrating piece 30 is connected to the both-side electrode circuit 12 and the electric wire 31.
[0019]
To the opening of the case 10, for example, a lid 20 processed as a base metal thin plate using Kovar, which is an alloy of iron (Fe), Ni, and Co, is joined to seal the inside of the case 10. However, in the lid 20 according to the present embodiment, the plating layer is formed only on the outer surface of the case opposite to the sealing surface of the case 10, and the plating layer is not formed on the sealing surface, but the bonding layer 21 is formed on the sealing surface. Thus, the impact of current generated during electric welding is minimized, and the lid 20 can be directly joined to the upper portion of the case 10 by low-temperature heat.
[0020]
That is, in the lid 20, a Ni plating layer 20b is formed on the outer surface of the case of a thin metal plate made of a metal alloy, and a bonding layer 21 having a constant thickness is formed on the sealing surface of the lid 20 where no plating layer is formed. Is formed. Of course, the Ni plating layer 20b employs a special plating method for forming a plating film only on one surface of the lid 20.
[0021]
The bonding layer 21 is preferably a metal alloy that can be directly heat-sealed to the opening of the case 10 by low-temperature heat (200 to 400 ° C.). Since the bonding layer 21 is formed on the sealing surface of the lid 20 where the Ni plating layer 20b is not formed in this manner, when the lid 20 is electrically welded, a current directly applies an electric action to the metal alloy bonding layer 21 to perform welding. Therefore, extremely efficient welding is performed.
[0022]
Therefore, there is a problem that a crack is generated in the case 10 when an electric current passes through the Ni plating layer 20a, and a melting reaction occurs in the Ni plating layer 20a to generate a P-containing gas. The problem of causing a fatal effect and the problem that gas leaks out to weaken the adhesive force of the lid 20 and harm the health of workers are solved, and a crystal oscillator with high productivity is provided. Obtainable.
[0023]
Further, since the lid 20 is directly bonded to the case 10 by the bonding layer 21 made of a metal alloy, the lid 20 is placed on the case 10 without using a silver-plated ring as in the related art, and the low temperature (200 to 400 C), the bonding layer 21 is firmly adhered to the periphery of the opening of the case 10 while melting. Therefore, while the joining operation of the lid 20 is extremely simple, the overall thickness is reduced and the size and the slimness of the crystal unit can be reduced, and an expensive silver-plated ring is not used. Costs can be reduced.
[0024]
Meanwhile, the metal alloy used for the bonding layer 21 can be variously configured. For example, it is preferable to use an alloy containing 78 to 82% by weight of tin (Sn), 9 to 11% by weight of zinc (Zn), and 9 to 11% by weight of Ag.
[0025]
As described above, the bonding layer 21 containing Sn as a main component and having proper amounts of Zn and Ag added thereto easily melts even at a low temperature of about 200 to 400 ° C., and has excellent welding characteristics as well as melting point and wettability. It has excellent mechanical properties, electrical properties, thermal properties, etc., and has almost no toxicity, so there is no danger of causing environmental pollution. Thus, the lid 20 can be firmly joined to the opening of the case 10, and the joining operation is extremely simple, so that the high quality quartz crystal resonator 1 can be provided.
[0026]
Therefore, when the lid 20 is placed on the case 10 without using a silver-plated ring and is pressed by an electrode roller while being moved via a conveyor, the joining layer 21 is formed on the bonding layer 21 via the electrode roller. A direct current is applied, and the bonding layer 21 is welded while being heated and melted by the contact resistance. Alternatively, when the joining layer 21 is welded using a laser beam, the joining layer 21 is melted and adheres firmly to the periphery of the opening of the case 10, so that the joining operation of the lid 20 is simple, but the sealing case of the sealing case is Since the thickness is reduced, the size and slimness of the crystal unit can be reduced.
[0027]
Meanwhile, the metal alloy of the bonding layer 21 can be formed by another method. For example, the main components are 68 to 72% by weight of Ag, 24 to 25% by weight of copper (Cu), 2 to 4% by weight of bismuth (Bi), 2 to 3% by weight of Sn, and 0.02 to 0.4% by weight of germanium (Ge). It can also be comprised from the alloy mentioned.
[0028]
As described above, the bonding layer 21 containing Ag and Cu as main components melts at a high temperature of 760 ° C. to 800 ° C., but has not only excellent welding characteristics but also extremely excellent bonding strength, long fatigue life, There is an advantage that the wettability can be improved, oxidation can be prevented, and the lid 20 can be firmly joined to the upper portion of the case 10.
[0029]
On the other hand, a method of forming the bonding layer 21 on the lid 20 will be described. As shown in the explanatory view of FIG. 3, for example, a thin metal plate in which a Ni plating layer 20b is formed on one surface of a lid 20 using Kovar as a base material is wound around a reel 40a so that the Ni plating layer 20b is outside the reel. After the bonding layer 21 made of a thin plate-shaped alloy is wound on a reel 40b, the lid 20 on which the Ni plating layer 20b is formed and the bonding layer 21 are passed through an idle roller 41 to become one.
[0030]
Next, high pressure is applied while passing between the pair of joining rollers 42 with a heater, and the joining layer 21 is joined by hot rolling to the surface of the lid 20 where the plating layer 20b is not formed. After passing between the pressure rollers 43 so as to maintain a constant thickness, a punch 44 is punched by a press 44 to manufacture a lid 20 of a fixed size having a bonding layer 21 formed on its sealing surface.
[0031]
The temperature of the heater mounted on the joining roller 42 and the like is automatically adjusted, and the temperature is set to a temperature slightly lower than the melting point of the joining layer 21. By using the hot rolling method in which the lid 20 and the bonding layer 21 passing between the bonding rollers 42 are pressed at a high temperature in this manner, the productivity of the bonding layer 21 can be increased while the bonding operation of the bonding layer 21 is extremely simple. Can be.
[0032]
The preferred embodiments of the crystal resonator lid and the method of manufacturing the crystal resonator lid according to the present embodiment have been described with reference to the accompanying drawings, but the present invention is not limited to such examples. It is obvious that a person skilled in the art can conceive various changes or modifications within the scope of the technical idea described in the claims, and those changes naturally fall within the technical scope of the present invention. It is understood to belong.
[0033]
【The invention's effect】
As described above, according to the present invention, only the joining layer is formed without forming the Ni plating layer on the sealing surface of the lid. Therefore, when the lid is electrically welded, the electric connection is directly applied to the joining layer of the metal alloy. An effect can be added, and extremely simple and efficient welding can be performed. Therefore, when a current flows through the Ni plating layer, cracks are generated in the ceramic case, gas generated when the Ni plating layer is melted has an adverse effect on the quartz vibrating piece, Problems such as weakening of adhesive strength and harm to worker's health can be solved, and a low-cost and highly reliable quartz oscillator can be provided.
[Brief description of the drawings]
FIG. 1 is an exploded perspective view of a lid of a crystal unit and a ceramic case according to the present embodiment.
FIGS. 2A and 2B are cross-sectional views showing a joining process of a lid and a ceramic case of the crystal unit according to the present embodiment, wherein FIG. 2A is a sectional view before joining, and FIG.
FIG. 3 is an explanatory diagram of a schematic device showing a manufacturing process of the crystal resonator lid according to the embodiment.
FIG. 4 is a cross-sectional view showing a process before joining a lid of a conventional crystal unit and a ceramic case.
[Explanation of symbols]
REFERENCE SIGNS LIST 1 crystal resonator 10 case 11 ceramic insulator 12 electrode circuit 20 lid 20 b Ni plating layer 21 bonding layer 30 crystal resonator element 31 wire

Claims (10)

水晶振動片が収納されるセラミックケースを密閉する水晶振動子リッドにおいて;
前記リッドの母材となる,金属薄板と,
前記金属薄板の前記ケース外部面に形成されたNiメッキ層と,
前記金属薄板の前記ケース封入面に形成された接合層と,
を含んでいることを特徴とする水晶振動子リッド。
In a crystal resonator lid that seals a ceramic case in which a crystal resonator element is stored;
A metal sheet, which is a base material of the lid,
A Ni plating layer formed on the outer surface of the case of the metal thin plate;
A bonding layer formed on the case enclosing surface of the metal sheet;
A crystal resonator lid comprising:
前記金属薄板の材質は,コバール合金であることを特徴とする請求項1に記載の水晶振動子リッド。The crystal resonator lid according to claim 1, wherein the material of the thin metal plate is a Kovar alloy. 前記接合層は,低温の熱に溶融する金属合金からなることを特徴とする請求項1に記載の水晶振動子リッド。The crystal resonator lid according to claim 1, wherein the bonding layer is made of a metal alloy that melts at a low temperature. 前記接合層の材質は,Sn78〜82重量%と,Zn9〜11重量%と,Ag9〜11重量%とから構成された合金であることを特徴とする請求項1または3に記載の水晶振動子リッド。4. The crystal unit according to claim 1, wherein a material of the bonding layer is an alloy including 78 to 82% by weight of Sn, 9 to 11% by weight of Zn, and 9 to 11% by weight of Ag. Lid. 前記接合層の材質は,Ag68〜72重量%と,Cu24〜25重量%と,Bi2〜4重量%と,Sn2〜3重量%と,Ge0.02〜0.4重量%とから構成された合金であることを特徴とする請求項1に記載の水晶振動子リッド。The material of the bonding layer is an alloy composed of 68 to 72% by weight of Ag, 24 to 25% by weight of Cu, 2 to 4% by weight of Bi, 2 to 3% by weight of Sn, and 0.02 to 0.4% by weight of Ge. The crystal resonator lid according to claim 1, wherein: 水晶振動子リッドの製造方法において;
前記リッドの母材となる金属薄板の片面にNiメッキ層を形成する工程と,
前記Niメッキ層を外側にして,前記金属薄板と合金からなる接合層とをアイドルローラを用い,1体化する工程と,
1体化した前記金属薄板をヒータが接続された一対の接合ローラを用い,高温で加圧して前記金属薄板と前記接合層とを接合する工程と,
前記接合層が接合された前記金属薄板を一対の加圧ローラを用い,厚みを一定にする工程と,
厚みが一定となった前記金属薄板をプレスを用い,前記リッドに形成する工程と,
を含むことを特徴とする水晶振動子リッドの製造方法。
In a method for manufacturing a crystal resonator lid:
Forming a Ni plating layer on one side of a thin metal plate serving as a base material of the lid;
Using the idle roller to unite the thin metal plate and the joining layer made of an alloy with the Ni plating layer on the outside,
Using a pair of joining rollers to which a heater is connected, to press the high-temperature one-piece sheet metal to join the sheet metal and the joining layer;
A step of using the pair of pressure rollers to make the thickness of the thin metal sheet joined with the joining layer constant,
Forming the metal sheet having a constant thickness on the lid by using a press,
A method for manufacturing a crystal resonator lid, comprising:
前記金属薄板は,コバール合金を用いることを特徴とする請求項6に記載の水晶振動子リッドの製造方法。7. The method according to claim 6, wherein the metal sheet uses a Kovar alloy. 前記接合層は,Sn78〜82重量%と,Zn9〜11重量%と,Ag9〜11重量%とから構成される合金を用いることを特徴とする請求項6に記載の水晶振動子リッドの製造方法。7. The method according to claim 6, wherein the bonding layer is made of an alloy including 78 to 82% by weight of Sn, 9 to 11% by weight of Zn, and 9 to 11% by weight of Ag. . 前記接合層は,Ag68〜72重量%と,Cu24〜25重量%と,Bi2〜4重量%と,Sn2〜3重量%と,Ge0.02〜0.4重量%とから構成される合金を用いることを特徴とする請求項6に記載の水晶振動子リッドの製造方法。The bonding layer uses an alloy composed of 68 to 72% by weight of Ag, 24 to 25% by weight of Cu, 2 to 4% by weight of Bi, 2 to 3% by weight of Sn, and 0.02 to 0.4% by weight of Ge. The method for manufacturing a crystal resonator lid according to claim 6, wherein: 前記ヒータが接続された一対の接合ローラは,前記接合層の融点より低い温度に設定することを特徴とする請求項6に記載の水晶振動子リッドの製造方法。7. The method according to claim 6, wherein the pair of joining rollers connected to the heater are set at a temperature lower than a melting point of the joining layer.
JP2002312389A 2002-09-19 2002-10-28 Crystal oscillator lid and method for manufacturing the same Withdrawn JP2004111889A (en)

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