JP2004104088A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2004104088A5 JP2004104088A5 JP2003184397A JP2003184397A JP2004104088A5 JP 2004104088 A5 JP2004104088 A5 JP 2004104088A5 JP 2003184397 A JP2003184397 A JP 2003184397A JP 2003184397 A JP2003184397 A JP 2003184397A JP 2004104088 A5 JP2004104088 A5 JP 2004104088A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- nitride semiconductor
- semiconductor device
- well
- barrier layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003184397A JP3951973B2 (ja) | 2003-06-27 | 2003-06-27 | 窒化物半導体素子 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003184397A JP3951973B2 (ja) | 2003-06-27 | 2003-06-27 | 窒化物半導体素子 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12981098A Division JP3857417B2 (ja) | 1998-05-13 | 1998-05-13 | 窒化物半導体素子 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2004104088A JP2004104088A (ja) | 2004-04-02 |
JP2004104088A5 true JP2004104088A5 (fr) | 2005-10-06 |
JP3951973B2 JP3951973B2 (ja) | 2007-08-01 |
Family
ID=32290611
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003184397A Expired - Fee Related JP3951973B2 (ja) | 2003-06-27 | 2003-06-27 | 窒化物半導体素子 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3951973B2 (fr) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5149093B2 (ja) * | 2003-06-26 | 2013-02-20 | 住友電気工業株式会社 | GaN基板及びその製造方法、並びに窒化物半導体素子及びその製造方法 |
KR100674862B1 (ko) * | 2005-08-25 | 2007-01-29 | 삼성전기주식회사 | 질화물 반도체 발광 소자 |
JP2010501117A (ja) * | 2006-08-16 | 2010-01-14 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | マグネシウムをドーピングされた(Al,In,Ga,B)N層の堆積方法 |
WO2008073385A1 (fr) | 2006-12-11 | 2008-06-19 | The Regents Of The University Of California | Croissance par dépôt chimique en phase vapeur organométallique de dispositifs optiques au nitrure iii non polaire haute performance |
JP2008244360A (ja) * | 2007-03-28 | 2008-10-09 | Furukawa Electric Co Ltd:The | 半導体発光素子 |
EP2045374A3 (fr) | 2007-10-05 | 2011-02-16 | Sumitomo Electric Industries, Ltd. | Procédé de fabrication de substrat de GaN et de plaquette pour épitaxie |
JP5181885B2 (ja) * | 2007-10-05 | 2013-04-10 | 住友電気工業株式会社 | GaN基板の製造方法、エピウエハの製造方法、半導体素子の製造方法およびエピウエハ |
JP4912386B2 (ja) * | 2008-11-26 | 2012-04-11 | シャープ株式会社 | InGaN層の製造方法 |
JP5504618B2 (ja) * | 2008-12-03 | 2014-05-28 | 豊田合成株式会社 | Iii族窒化物半導体発光素子及びその製造方法 |
JP5143076B2 (ja) * | 2009-04-09 | 2013-02-13 | シャープ株式会社 | 窒化物半導体発光素子の製造方法 |
US8218595B2 (en) * | 2010-05-28 | 2012-07-10 | Corning Incorporated | Enhanced planarity in GaN edge emitting lasers |
-
2003
- 2003-06-27 JP JP2003184397A patent/JP3951973B2/ja not_active Expired - Fee Related
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW451536B (en) | Nitride semiconductor device | |
JP2005507155A5 (fr) | ||
EP2259347A3 (fr) | Structures de diodes électroluminescentes à base de nitrure du groupe III avec puits quantique et réseau superposé, structures de puits quantique à base de nitrure du groupe III et structures de réseau superposé à base de nitrure du groupe III | |
TWI263387B (en) | Light emitting device structure provided with nitride bulk mono-crystal layers | |
TW587355B (en) | Nitride semiconductor device | |
JP2008526013A (ja) | 窒化物半導体発光素子及びその製造方法 | |
JP2009260397A5 (fr) | ||
EP1884999A4 (fr) | Dispositif semi-conducteur et son procede de fabrication | |
TW200625694A (en) | Group Ⅲ nitride compound semiconductor light emitting device | |
DE60234330D1 (de) | Halbleiterelement aus galliumnitridzusammensetzung | |
JP2004031770A5 (fr) | ||
US8872157B2 (en) | Nitride semiconductor structure and semiconductor light emitting device including the same | |
JP2004104088A5 (fr) | ||
WO2005038937A1 (fr) | Dispositif electroluminescent semi-conducteur au nitrure | |
EP1619729A4 (fr) | Dispositif électroluminescent à base de nitrure de gallium | |
WO2004004085A3 (fr) | Dispositif laser semi-conducteur a base de nitrures et procede d'amelioration de la capacite dudit dispositif | |
TW200507112A (en) | Nitride semiconductor device and method for manufacturing the same | |
TW200637036A (en) | Nitride semiconductor device | |
CN110828627B (zh) | 可协变应力AlN结构及其制备方法 | |
TW200512959A (en) | Nitride semiconductor device and the manufacturing method thereof | |
JP2014053639A5 (ja) | 半導体素子用エピタキシャル基板の作製方法、半導体素子用エピタキシャル基板、および半導体素子 | |
JP2010258313A (ja) | 電界効果トランジスタ及びその製造方法 | |
TW200515623A (en) | Light-emitting device and method for manufacturing the same | |
CN112713183B (zh) | 气体传感器的制备方法及气体传感器 | |
JP2006332125A (ja) | 半導体素子 |