JP2004096033A - Semiconductor device and its manufacturing method - Google Patents

Semiconductor device and its manufacturing method Download PDF

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JP2004096033A
JP2004096033A JP2002258572A JP2002258572A JP2004096033A JP 2004096033 A JP2004096033 A JP 2004096033A JP 2002258572 A JP2002258572 A JP 2002258572A JP 2002258572 A JP2002258572 A JP 2002258572A JP 2004096033 A JP2004096033 A JP 2004096033A
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sensor
insulating member
cover
bonding
semiconductor substrate
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JP2004096033A5 (en
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Tokuo Nagasaki
長崎　徳雄
Hirobumi Ooashi
大芦　博文
Yukihiro Kin
金　幸宏
Kaname Oshida
大志田　要
Makoto Sato
佐藤　真
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Toshiba Corp
Japan Semiconductor Corp
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Toshiba Corp
Iwate Toshiba Electronics Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method that can reduce failures of a manufacturing machine and improve the production yield by preventing cut scraps and dust from sticking to a sensor. <P>SOLUTION: This device has a semiconductor substrate 32 having a sensor 34 on the upper surface, a cover fixing part 39 provided on this semiconductor substrate 32 and surrounding the whole sensor 34, a light transmissive cover 41 adhered to the cover fixing part 39 to cover the sensor 34 while leaving a hollow 40 above it before cutting, and a bonding electrode 36 of the sensor 34 provided outside the adhering position of the light transmissive cover 41. And this machine uses the lower surface of the semiconductor substrate 32 as the mounting surface 46. <P>COPYRIGHT: (C)2004,JPO

Description

【０００１】
【発明の属する技術分野】
本発明は、ＣＭＯＳセンサやＣＣＤ等の半導体装置に好適する半導体装置及びその製造方法に関する。
【０００２】
【従来の技術】
従来、ＣＭＯＳセンサやＣＣＤ等の画像センサを有する半導体装置は、センサ部上方に光透過性カバーを、間に中空部を設けるようにして構成されており、その製造工程及び実装基板への実装は以下の通りとなっている。
【０００３】
以下、従来の技術を、図９乃至図１３を参照して説明する。図９は第１の製造工程を示す断面図であり、図１０は第２の製造工程を示す断面図であり、図１１は第３の製造工程を示す断面図であり、図１２は第４の製造工程を示す断面図であり、図１３は半導体装置を実装基板に実装した状態を示す断面図である。
【０００４】
先ず、図９乃至図１２により製造工程を説明すると、図９に示す第１の製造工程において、上面に複数のセンサ部１と、個々のセンサ部１に対応する電極部２をシリコン半導体基板３に形成し、ウェハ状態のものとする。その後、半導体基板３を個々のセンサ部１とこれに対応する電極部２とが形成された部分毎にダイシングにより分離し、複数個の半導体チップ４を形成する。
【０００５】
次に、図１０に示す第２の製造工程において、直方体形状の半導体チップ４をセラミックス等でなるパッケージ５のチップ搭載部分６に接着剤７により固着する。パッケージ５は、上面中央部分にチップ搭載部分６が形成された方形平板状の第１のパッケージ部材８と、チップ搭載部分６を全周を囲むように第１のパッケージ部材８の上面上に気密に設けられた角枠状の第２のパッケージ部材９と、半導体チップ４の電極部２に対応するよう第２のパッケージ部材９の上面から側面、さらに第１のパッケージ部材８の側面、下面縁部にかけて設けられた接続導体部材１０と、接続導体部材１０の第２のパッケージ部材９上面側上端面１１を露出させるようにして第２のパッケージ部材９等の上に気密に設けられると共に、半導体チップ４及び次工程でボンディングされるボンディングワイヤ１２よりも高く上面のカバー固着面１３が位置するよう形成された角枠状の第３のパッケージ部材１４を備えて構成されている。
【０００６】
次に、図１１に示す第３の製造工程において、接続導体部材１０の露出上端面１１と半導体チップ４の電極部２の対応するもの同士を、ボンディングワイヤ１２をボンディングすることによって接続する。
【０００７】
次に、図１２に示す第４の製造工程において、第３のパッケージ部材１４のカバー固着面１３に、センサ部１の上方を間に中空部１５を設けて覆うよう板状の光透過性カバー１６を接着剤１７により気密に固着し、半導体装置１８が形成される。
【０００８】
また、上記のようにして形成された半導体装置１８の実装基板１９への実装は、図１３に示すように、実装基板１９の上面上の実装位置に配置されたパッド２０に、第１のパッケージ部材８の下面縁部に設けた接続導体部材１０の下端面２１を、半田付け２２することによって行なわれる。
【０００９】
しかしながら上記の従来技術においては、ウェハ状態の半導体基板３を個々の半導体チップ４にダイシングによって切り分け、その後に、パッケージ５のチップ搭載部分６に固着し、さらに光透過性カバー１６を気密に固着して封止を行なっていた。そして、上記のダイシング時の切削くずや、半導体チップ４をパッケージ５に固着する際のクリーンルーム中に浮遊するごみ、また各部材から発した塵等がセンサ部１に付着して、半導体装置１８の黒きず不良等の原因となり、製品歩留を低いものとしていた。このため、センサ部１への切削くずやごみ等の付着を少なくし、装置不良の低減と、これに伴う製品歩留の向上が強く求められている。
【００１０】
【発明が解決しようとする課題】
上記のような状況に鑑みて本発明はなされたもので、その目的とするところはセンサ部への切削くずやごみ等の付着が少なく、これによって装置不良の低減と、製品歩留の向上が行なうことができる半導体装置及びその製造方法を提供することにある。
【００１１】
【課題を解決するための手段】
本発明の半導体装置及びその製造方法は、センサ部を上面に設けてなる半導体基板と、この半導体基板上に前記センサ部の全周を囲むよう設けられたカバー固着部と、このカバー固着部に、前記センサ部の上方を間に中空部を形成して覆うよう固着された光透過性カバーと、前記センサ部に対応して前記光透過性カバーの固着部分より外方位置に設けられたボンディング電極を備えると共に、前記半導体基板の下面を実装面としてなることを特徴とするものであり、
さらに、実装時に、前記半導体基板下面の実装面を実装基板上に固着し、前記ボンディング電極を前記実装基板のボンディングパッドにボンディングワイヤによって接続することを特徴とするものであり、
また、半導体基板表面にセンサ部とこれに対応する電極部を形成し、前記電極部上にバンプを固着する工程と、前記バンプを埋め込むように絶縁部材を塗布した後、前記絶縁部材を、その厚さが所定厚となるよう切除する工程と、所定厚となった前記絶縁部材上に光透過性カバーを前記センサ部との間に中空部を形成するようにして固着する工程と、前記電極部上の前記光透過性カバー、絶縁部材、バンプを、前記バンプにボンディング面が形成されるよう切除する工程を備えていることを特徴とする方法であり、
また、半導体基板表面にセンサ部とこれに対応する電極部とを複数組形成し、個々の前記電極部上にバンプを固着する工程と、前記バンプを埋め込むように絶縁部材を塗布した後、前記半導体基板全面の前記絶縁部材を、その厚さが所定厚となるよう切除する工程と、所定厚となった前記絶縁部材上に光透過性カバーを前記センサ部との間に中空部を形成するようにして前記半導体基板全面にわたり固着する工程と、前記電極部上の前記光透過性カバー、絶縁部材、バンプを、前記バンプにボンディング面が形成されるよう切除する工程と、前記バンプにボンディング面を形成した後、前記センサ部を有する個々の装置に分離する工程を備えていることを特徴とする方法であり、
さらに、絶縁部材の塗布が、転写によって行なわれることを特徴とする方法である。
【００１２】
【発明の実施の形態】
以下本発明の一実施形態であるＣＭＯＳセンサやＣＣＤ等の画像センサを有する半導体装置及びその製造方法を、図１乃至図８を参照して説明する。図１は半導体装置の断面図であり、図２は第１の製造工程を示す断面図であり、図３は第２の製造工程を示す断面図であり、図４は第３の製造工程を示す断面図であり、図５は第４の製造工程を示す断面図であり、図６は第５の製造工程を示す断面図であり、図７は半導体装置を実装基板の実装位置に固着した状態を示す断面図であり、図８は半導体装置を実装基板に実装した状態を示す断面図である。
【００１３】
図１において、半導体装置３１は、シリコン半導体基板３２の方形状の上面中央部分に、センシング面３３を上方に向けるようにしてセンサ部３４が設けられている。またセンサ部３４より外方の半導体基板３２上部の周囲部分に、センサ部３４に対応する複数の電極部３５が設けられ、また各電極部３５上には、電極部３５に導通するボンディング電極３６が設けられている。さらに、各電極部３５が設けられている半導体基板３２の周囲部分の上面には、絶縁材料によって形成された角枠部３７が、ボンディング電極３６をボンディング面３８が露出するような状態に埋め込むと共に、センサ部３４を全周にわたって囲むように設けられている。
【００１４】
また、角枠部３７は、ボンディング電極３６のボンディング面３８が露出する上面内方部分に、内側縁に沿って堤状をなすようにカバー固着部３９が上方に突出して設けられている。そして、カバー固着部３９上には、センサ部３４の上方を間に中空部４０を設けて覆うよう平板状の光透過性カバー４１が気密に固着されている。
【００１５】
また、このような半導体装置３１の製造工程は、以下の通りとなっている。
【００１６】
先ず、図２に示す第１の製造工程において、ウェハ状のシリコン半導体基板３２を、２点鎖線で示す切断線Ａで区画位置を示すように、略方形状の各チップ形成領域４２に画成し、各チップ形成領域４２の上面中央部分に、上面のセンシング面３３を上方に向けるようにしてセンサ部３４を形成する。また各チップ形成領域４３のセンサ部３４より外方の半導体基板３２上部の周囲部分に、センサ部３４に対応するアルミニウムで形成された複数の電極部３５が設ける。続いて、各電極部３５上に、高さが所定の高さ以上の金製バンプ４３を固着する。
【００１７】
次に、図３に示す第２の製造工程において、各バンプ４３を埋め込むと共にセンサ部３４の全周を囲うように、例えば特定の紫外線により破壊する接着剤でなる絶縁部材４４を転写により、所定の高さ以上となるよう塗布する。この時、絶縁部材４４によってセンサ部３４を覆うことなく、バンプ４３のみを覆う。
【００１８】
次に、図４に示す第３の製造工程において、各チップ形成領域４２の全ての絶縁部材４４の高さが、所定の高さとなるように、バンプ４３の上端部分の加工も含めて加工し、絶縁部材４４の上面を平坦化する。そして、加工後の絶縁部材４４の平坦な上面上に、各チップ形成領域４２の全てにわたって、平板状の光透過性カバー４１を気密に固着する。これにより、センサ部３４は、上方を間に中空部４０を設けるようにして光透過性カバー４１によって覆われ、封止がなされる。
【００１９】
次に、図５に示す第４の製造工程において、バンプ４３の上方のセンサ部３４より外方となる周囲部分の光透過性カバー４１、その下側のバンプ４３、絶縁部材４４を削設する。この削設により、各チップ形成領域４２のセンサ部３４を囲う角枠部３７が形成され、角枠部３７の上面外方部分に、バンプ４３によりなるボンディング電極３６のボンディング面３８が露出し、また上面内方部分に、光透過性カバー４１を固着したカバー固着部３９が内側縁に沿って上方に突出するよう設けられる。
【００２０】
次に、図６に示す第５の製造工程において、半導体基板３２及びその上面に絶縁部材４４を削設して設けられた角枠部３７を、図示しないダイヤモンドソーによるダイシングにより、切断線Ａに沿って各チップ形成領域４２毎に切断、分離して、個々の半導体装置３１とする。
【００２１】
また、上記の製造工程を経て形成された半導体装置３１の実装は、以下のように行なわれる。すなわち、先ず、図７に示すように、半導体装置３１を、その下面の実装面４６を実装基板４５の実装位置に接着剤４７を用いて固着する。なお、４８は実装基板４５の半導体装置３１の実装位置近傍に、半導体装置３１の電極部３５に対応して設けられたボンディングパッドである。
【００２２】
そして、図８に示すように、実装基板４５に固着された半導体装置３１の各ボンディング電極３６のボンディング面３８と、これらに対応する実装基板４５の各ボンディングパッド４８の上面とに、ボンディングワイヤ４９の両端部をボンディングし、半導体装置３１の実装基板４５への実装を終了する。
【００２３】
以上の通り、上記の半導体装置３１は、光透過性カバー４１を気密に固着して封止を行なった後に、光透過性カバー４１やバンプ４３、絶縁部材４４の削設を行ない、またダイシングによって個々の装置に切断、分離するため、削設時やダイシング時の切削くずや、その後の工程でのクリーンルーム中に浮遊するごみ等のセンサ部３４への付着がなくなり、半導体装置３１の黒きず不良等が減少し、装置不良が低減して製品歩留が向上する。
【００２４】
【発明の効果】
以上の説明から明らかなように、本発明によれば、センサ部に切削くずやごみ等が付着する虞が少なくなり、装置不良が低減し、製品歩留の向上する等の効果を奏する。
【図面の簡単な説明】
【図１】本発明の一実施形態である半導体装置の断面図である。
【図２】本発明の一実施形態の第１の製造工程を示す断面図である。
【図３】本発明の一実施形態の第２の製造工程を示す断面図である。
【図４】本発明の一実施形態の第３の製造工程を示す断面図である。
【図５】本発明の一実施形態の第４の製造工程を示す断面図である。
【図６】本発明の一実施形態の第５の製造工程を示す断面図である。
【図７】本発明の一実施形態の半導体装置を実装基板の実装位置に固着した状態を示す断面図である。
【図８】本発明の一実施形態の半導体装置を実装基板に実装した状態を示す断面図である。
【図９】従来技術における第１の製造工程を示す断面図である。
【図１０】従来技術における第２の製造工程を示す断面図である。
【図１１】従来技術における第３の製造工程を示す断面図である。
【図１２】従来技術における第４の製造工程を示す断面図である。
【図１３】従来技術における半導体装置を実装基板に実装した状態を示す断面図である。
【符号の説明】
３２…半導体基板
３４…センサ部
３５…電極部
３６…ボンディング電極
３８…ボンディング面
３９…カバー固着部
４０…中空部
４１…光透過性カバー
４３…バンプ
４４…絶縁部材
４５…実装基板
４６…実装面
４８…ボンディングパッド
４９…ボンディングワイヤ[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a semiconductor device suitable for a semiconductor device such as a CMOS sensor or a CCD and a method for manufacturing the same.
[0002]
[Prior art]
2. Description of the Related Art Conventionally, a semiconductor device having an image sensor such as a CMOS sensor or a CCD is configured such that a light-transmitting cover is provided above a sensor unit and a hollow portion is provided between the sensor unit and the manufacturing process and mounting on a mounting board. It is as follows.
[0003]
Hereinafter, the related art will be described with reference to FIGS. 9 is a cross-sectional view showing a first manufacturing step, FIG. 10 is a cross-sectional view showing a second manufacturing step, FIG. 11 is a cross-sectional view showing a third manufacturing step, and FIG. 13 is a cross-sectional view showing a state in which the semiconductor device is mounted on a mounting board.
[0004]
First, the manufacturing process will be described with reference to FIGS. 9 to 12. In a first manufacturing process shown in FIG. 9, a plurality of sensor portions 1 and an electrode portion 2 corresponding to each sensor portion 1 are formed on a silicon semiconductor substrate 3 on an upper surface. To form a wafer. Thereafter, the semiconductor substrate 3 is separated by dicing into portions where the individual sensor portions 1 and the corresponding electrode portions 2 are formed, thereby forming a plurality of semiconductor chips 4.
[0005]
Next, in a second manufacturing process shown in FIG. 10, the semiconductor chip 4 having a rectangular parallelepiped shape is fixed to the chip mounting portion 6 of the package 5 made of ceramics or the like with an adhesive 7. The package 5 has a rectangular flat plate-shaped first package member 8 in which a chip mounting portion 6 is formed at the center of the upper surface, and hermetically seals the upper surface of the first package member 8 so as to surround the entire periphery of the chip mounting portion 6. And a side surface from the upper surface of the second package member 9 corresponding to the electrode portion 2 of the semiconductor chip 4, and further, a side surface and a lower surface edge of the first package member 8. The connecting conductor member 10 provided over the portion and the upper end surface 11 on the upper surface side of the second package member 9 of the connecting conductor member 10 are hermetically provided on the second package member 9 and the like so as to expose the semiconductor. A chip 4 and a third rectangular frame-shaped package member 14 formed so that the cover fixing surface 13 on the upper surface thereof is higher than the bonding wires 12 to be bonded in the next step. It is.
[0006]
Next, in a third manufacturing step shown in FIG. 11, the exposed upper end surface 11 of the connection conductor member 10 and the corresponding one of the electrode portions 2 of the semiconductor chip 4 are connected by bonding a bonding wire 12.
[0007]
Next, in a fourth manufacturing process shown in FIG. 12, a plate-shaped light-transmitting cover is provided on the cover fixing surface 13 of the third package member 14 so as to cover the sensor unit 1 with a hollow portion 15 provided therebetween. The semiconductor device 18 is formed by hermetically fixing 16 with an adhesive 17.
[0008]
Further, the semiconductor device 18 formed as described above is mounted on a mounting board 19 by mounting a first package on a pad 20 disposed at a mounting position on the upper surface of the mounting board 19 as shown in FIG. This is performed by soldering 22 the lower end surface 21 of the connection conductor member 10 provided on the lower surface edge of the member 8.
[0009]
However, in the above-described conventional technique, the semiconductor substrate 3 in a wafer state is cut into individual semiconductor chips 4 by dicing, and thereafter, the semiconductor substrate 3 is fixed to the chip mounting portion 6 of the package 5, and the light-transmitting cover 16 is further hermetically fixed. Sealing. Then, the above-mentioned cutting waste at the time of dicing, dust floating in a clean room when the semiconductor chip 4 is fixed to the package 5, dust generated from each member, and the like adhere to the sensor unit 1, and the semiconductor device 18 This may cause defects such as black defects and reduce the product yield. For this reason, there is a strong demand for reducing the attachment of cutting waste and dust to the sensor unit 1, reducing the device failure, and improving the product yield associated therewith.
[0010]
[Problems to be solved by the invention]
The present invention has been made in view of the above situation, and its purpose is to reduce the adhesion of cutting waste and dust to the sensor portion, thereby reducing device defects and improving product yield. It is an object of the present invention to provide a semiconductor device and a method for manufacturing the same.
[0011]
[Means for Solving the Problems]
The present invention provides a semiconductor device and a method of manufacturing the same, comprising: a semiconductor substrate having a sensor portion provided on an upper surface thereof; a cover fixing portion provided on the semiconductor substrate so as to surround the entire periphery of the sensor portion; A light-transmitting cover fixed so as to cover and form a hollow portion above the sensor portion, and bonding provided corresponding to the sensor portion at a position outside the fixed portion of the light-transmitting cover. With an electrode, characterized in that the lower surface of the semiconductor substrate is used as a mounting surface,
Further, at the time of mounting, the mounting surface of the lower surface of the semiconductor substrate is fixed on a mounting substrate, and the bonding electrode is connected to a bonding pad of the mounting substrate by a bonding wire,
Also, forming a sensor portion and an electrode portion corresponding to the sensor portion on the surface of the semiconductor substrate, fixing a bump on the electrode portion, and applying an insulating member so as to embed the bump, the insulating member, Cutting off to a predetermined thickness, fixing a light-transmitting cover on the insulating member having the predetermined thickness so as to form a hollow portion between the sensor portion and the electrode, Cutting the light transmissive cover, insulating member, and bumps on a portion so that a bonding surface is formed on the bumps.
Further, after forming a plurality of sets of sensor portions and corresponding electrode portions on the surface of the semiconductor substrate, fixing a bump on each of the electrode portions, and applying an insulating member so as to embed the bumps, A step of cutting off the insulating member on the entire surface of the semiconductor substrate so as to have a predetermined thickness, and forming a hollow portion between the sensor unit and a light-transmitting cover on the insulating member having the predetermined thickness. Fixing the light-transmitting cover, the insulating member, and the bump on the electrode portion so that a bonding surface is formed on the bump; and bonding the bonding surface to the bump. After forming, the method comprises the step of separating into individual devices having the sensor unit,
Further, the method is characterized in that the application of the insulating member is performed by transfer.
[0012]
BEST MODE FOR CARRYING OUT THE INVENTION
A semiconductor device having an image sensor such as a CMOS sensor or a CCD and a method of manufacturing the same according to an embodiment of the present invention will be described below with reference to FIGS. 1 is a sectional view of a semiconductor device, FIG. 2 is a sectional view showing a first manufacturing step, FIG. 3 is a sectional view showing a second manufacturing step, and FIG. 4 is a sectional view showing a third manufacturing step. FIG. 5 is a cross-sectional view showing a fourth manufacturing step, FIG. 6 is a cross-sectional view showing a fifth manufacturing step, and FIG. 7 shows a semiconductor device fixed to a mounting position of a mounting substrate. FIG. 8 is a cross-sectional view illustrating a state in which the semiconductor device is mounted on a mounting board.
[0013]
In FIG. 1, a semiconductor device 31 has a sensor section 34 provided at a center portion of a square upper surface of a silicon semiconductor substrate 32 so that a sensing surface 33 faces upward. A plurality of electrode portions 35 corresponding to the sensor portion 34 are provided in a peripheral portion of the upper portion of the semiconductor substrate 32 outside the sensor portion 34, and a bonding electrode 36 electrically connected to the electrode portion 35 is provided on each electrode portion 35. Is provided. Further, a rectangular frame portion 37 made of an insulating material embeds the bonding electrode 36 in a state where the bonding surface 38 is exposed on the upper surface of the peripheral portion of the semiconductor substrate 32 on which the electrode portions 35 are provided. , Is provided so as to surround the sensor section 34 over the entire circumference.
[0014]
Further, the corner frame 37 is provided with a cover fixing portion 39 projecting upward so as to form a bank along the inner edge at an inner portion of the upper surface where the bonding surface 38 of the bonding electrode 36 is exposed. On the cover fixing portion 39, a flat light-transmitting cover 41 is hermetically fixed so as to cover the sensor portion 34 with a hollow portion 40 provided therebetween.
[0015]
The manufacturing process of such a semiconductor device 31 is as follows.
[0016]
First, in the first manufacturing process shown in FIG. 2, the wafer-shaped silicon semiconductor substrate 32 is defined in each of the substantially square chip forming regions 42 so as to indicate the division position by a cutting line A shown by a two-dot chain line. Then, the sensor section 34 is formed at the center of the upper surface of each chip forming region 42 so that the sensing surface 33 on the upper surface faces upward. Further, a plurality of electrode portions 35 made of aluminum corresponding to the sensor portions 34 are provided in a peripheral portion of the upper part of the semiconductor substrate 32 outside the sensor portions 34 in each chip formation region 43. Subsequently, a gold bump 43 having a height equal to or higher than a predetermined height is fixed on each electrode portion 35.
[0017]
Next, in a second manufacturing process shown in FIG. 3, an insulating member 44 made of, for example, an adhesive that is broken by a specific ultraviolet ray is transferred by a predetermined process so as to embed each bump 43 and surround the entire periphery of the sensor unit 34. Is applied so that the height is not less than the height. At this time, only the bump 43 is covered without covering the sensor section 34 with the insulating member 44.
[0018]
Next, in the third manufacturing process shown in FIG. 4, the processing including the processing of the upper end portion of the bump 43 is performed so that the height of all the insulating members 44 in each chip forming region 42 becomes a predetermined height. Then, the upper surface of the insulating member 44 is flattened. Then, on the flat upper surface of the processed insulating member 44, the flat light-transmitting cover 41 is airtightly fixed over the entire chip forming region 42. Thereby, the sensor section 34 is covered with the light transmissive cover 41 so that the hollow section 40 is provided therebetween, and the sensor section 34 is sealed.
[0019]
Next, in a fourth manufacturing process shown in FIG. 5, the light transmissive cover 41 in the peripheral portion outside the sensor section 34 above the bump 43, the bump 43 below the bump 43, and the insulating member 44 are cut out. . As a result of this removal, a square frame portion 37 surrounding the sensor portion 34 in each chip forming region 42 is formed, and the bonding surface 38 of the bonding electrode 36 formed by the bump 43 is exposed on the outer surface of the upper surface of the square frame portion 37, A cover fixing portion 39 to which the light transmissive cover 41 is fixed is provided on the inner portion of the upper surface so as to protrude upward along the inner edge.
[0020]
Next, in a fifth manufacturing process shown in FIG. 6, the semiconductor substrate 32 and the square frame portion 37 provided by cutting the insulating member 44 on the upper surface thereof are cut into the cutting line A by dicing with a diamond saw (not shown). The semiconductor device 31 is cut and separated along the chip forming regions 42 along the individual lines.
[0021]
The mounting of the semiconductor device 31 formed through the above-described manufacturing process is performed as follows. That is, first, as shown in FIG. 7, the semiconductor device 31 is fixed to the mounting position of the mounting substrate 45 with the adhesive 47 at the mounting surface 46 on the lower surface thereof. Reference numeral 48 denotes a bonding pad provided near the mounting position of the semiconductor device 31 on the mounting board 45, corresponding to the electrode portion 35 of the semiconductor device 31.
[0022]
Then, as shown in FIG. 8, a bonding wire 49 is attached to the bonding surface 38 of each bonding electrode 36 of the semiconductor device 31 fixed to the mounting substrate 45 and the upper surface of each bonding pad 48 of the mounting substrate 45 corresponding thereto. Are bonded, and the mounting of the semiconductor device 31 on the mounting board 45 is completed.
[0023]
As described above, in the above-described semiconductor device 31, after the light transmissive cover 41 is hermetically fixed and sealed, the light transmissive cover 41, the bumps 43, and the insulating members 44 are cut out, and the dicing is performed. Since the individual devices are cut and separated, there is no sticking to the sensor unit 34 of cutting debris at the time of cutting or dicing or dust floating in a clean room in a subsequent process, and the black defect of the semiconductor device 31 is reduced. And the like, the number of device defects is reduced, and the product yield is improved.
[0024]
【The invention's effect】
As is clear from the above description, according to the present invention, there is less danger that cutting debris, dust and the like will adhere to the sensor portion, and there are effects such as reduction of device defects and improvement of product yield.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view of a semiconductor device according to an embodiment of the present invention.
FIG. 2 is a cross-sectional view showing a first manufacturing step of one embodiment of the present invention.
FIG. 3 is a cross-sectional view showing a second manufacturing step of one embodiment of the present invention.
FIG. 4 is a cross-sectional view showing a third manufacturing step of the embodiment of the present invention.
FIG. 5 is a sectional view showing a fourth manufacturing step of the embodiment of the present invention.
FIG. 6 is a cross-sectional view showing a fifth manufacturing step of one embodiment of the present invention.
FIG. 7 is a cross-sectional view showing a state where the semiconductor device according to the embodiment of the present invention is fixed to a mounting position of a mounting substrate.
FIG. 8 is a cross-sectional view showing a state where the semiconductor device according to one embodiment of the present invention is mounted on a mounting board.
FIG. 9 is a cross-sectional view showing a first manufacturing step in the related art.
FIG. 10 is a cross-sectional view showing a second manufacturing step in the related art.
FIG. 11 is a sectional view showing a third manufacturing step in the conventional technique.
FIG. 12 is a sectional view showing a fourth manufacturing step in the conventional technique.
FIG. 13 is a cross-sectional view showing a state in which a semiconductor device according to a conventional technique is mounted on a mounting board.
[Explanation of symbols]
32 semiconductor substrate 34 sensor part 35 electrode part 36 bonding electrode 38 bonding surface 39 cover fixing part 40 hollow part 41 light transmitting cover 43 bump 44 insulating member 45 mounting substrate 46 mounting surface 48 bonding pad 49 bonding wire

Claims (5)

センサ部を上面に設けてなる半導体基板と、この半導体基板上に前記センサ部の全周を囲むよう設けられたカバー固着部と、このカバー固着部に、前記センサ部の上方を間に中空部を形成して覆うよう固着された光透過性カバーと、前記センサ部に対応して前記光透過性カバーの固着部分より外方位置に設けられたボンディング電極を備えると共に、前記半導体基板の下面を実装面としてなることを特徴とする半導体装置。A semiconductor substrate having a sensor portion provided on an upper surface thereof, a cover fixing portion provided on the semiconductor substrate so as to surround the entire periphery of the sensor portion, and a hollow portion between the sensor fixing portion and the cover fixing portion. A light-transmitting cover fixed so as to cover the light-transmitting cover, and a bonding electrode provided outside the fixed portion of the light-transmitting cover corresponding to the sensor portion. A semiconductor device, which is used as a mounting surface. 実装時に、前記半導体基板下面の実装面を実装基板上に固着し、前記ボンディング電極を前記実装基板のボンディングパッドにボンディングワイヤによって接続することを特徴とする請求項１記載の半導体装置。2. The semiconductor device according to claim 1, wherein at the time of mounting, a mounting surface of the lower surface of the semiconductor substrate is fixed on a mounting substrate, and the bonding electrode is connected to a bonding pad of the mounting substrate by a bonding wire. 半導体基板表面にセンサ部とこれに対応する電極部を形成し、前記電極部上にバンプを固着する工程と、前記バンプを埋め込むように絶縁部材を塗布した後、前記絶縁部材を、その厚さが所定厚となるよう切除する工程と、所定厚となった前記絶縁部材上に光透過性カバーを前記センサ部との間に中空部を形成するようにして固着する工程と、前記電極部上の前記光透過性カバー、絶縁部材、バンプを、前記バンプにボンディング面が形成されるよう切除する工程を備えていることを特徴とする半導体装置の製造方法。Forming a sensor portion and a corresponding electrode portion on the surface of the semiconductor substrate, fixing a bump on the electrode portion, and applying an insulating member so as to embed the bump; Cutting off so as to have a predetermined thickness, fixing a light-transmitting cover on the insulating member having a predetermined thickness so as to form a hollow portion between the sensor and the sensor, Removing the light-transmitting cover, the insulating member, and the bumps so that a bonding surface is formed on the bumps. 半導体基板表面にセンサ部とこれに対応する電極部とを複数組形成し、個々の前記電極部上にバンプを固着する工程と、前記バンプを埋め込むように絶縁部材を塗布した後、前記半導体基板全面の前記絶縁部材を、その厚さが所定厚となるよう切除する工程と、所定厚となった前記絶縁部材上に光透過性カバーを前記センサ部との間に中空部を形成するようにして前記半導体基板全面にわたり固着する工程と、前記電極部上の前記光透過性カバー、絶縁部材、バンプを、前記バンプにボンディング面が形成されるよう切除する工程と、前記バンプにボンディング面を形成した後、前記センサ部を有する個々の装置に分離する工程を備えていることを特徴とする半導体装置の製造方法。Forming a plurality of pairs of sensor portions and corresponding electrode portions on the surface of the semiconductor substrate, fixing bumps on the individual electrode portions, and applying an insulating member so as to embed the bumps; A step of cutting off the entire surface of the insulating member so as to have a predetermined thickness, and forming a hollow portion between the sensor portion and a light-transmitting cover on the predetermined thickness of the insulating member. Fixing the light-transmitting cover, insulating member, and bump on the electrode portion so that a bonding surface is formed on the bump; and forming a bonding surface on the bump. And then separating the individual devices having the sensor unit into individual devices. 絶縁部材の塗布が、転写によって行なわれることを特徴とする請求項３または請求項４記載の半導体装置の製造方法。5. The method for manufacturing a semiconductor device according to claim 3, wherein the application of the insulating member is performed by transfer.
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Cited By (4)

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JP2007173483A (en) * 2005-12-21 2007-07-05 Sanyo Electric Co Ltd Semiconductor device, its manufacturing method, and camera module
KR101004574B1 (en) * 2006-09-06 2010-12-30 히타치 긴조쿠 가부시키가이샤 Semiconductor sensor device and method for manufacturing same
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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007173483A (en) * 2005-12-21 2007-07-05 Sanyo Electric Co Ltd Semiconductor device, its manufacturing method, and camera module
KR101004574B1 (en) * 2006-09-06 2010-12-30 히타치 긴조쿠 가부시키가이샤 Semiconductor sensor device and method for manufacturing same
US8022433B2 (en) 2006-09-06 2011-09-20 Hitachi Metals, Ltd. Semiconductor sensor device and method for manufacturing same
CN102365744A (en) * 2009-02-11 2012-02-29 米辑电子 Image and light sensor chip packages
JP2012517716A (en) * 2009-02-11 2012-08-02 メギカ・コーポレイション Image and light sensor chip package
JP2014168079A (en) * 2009-02-11 2014-09-11 Megit Acquisition Corp Image and light sensor chip packages
US8853754B2 (en) 2009-02-11 2014-10-07 Qualcomm Incorporated Image and light sensor chip packages
CN104944363A (en) * 2014-03-26 2015-09-30 中芯国际集成电路制造(上海)有限公司 Method for manufacturing MEMS (Micro-Electro-Mechanical System) device structure

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