JP4932788B2 - Semiconductor device, module for optical device, and method for manufacturing semiconductor device - Google Patents

Description

  The present invention relates to a semiconductor device including a cover that covers a part of a main surface of a semiconductor element. The present invention also relates to an optical device module including such a semiconductor device and a method for manufacturing such a semiconductor device.

  Conventionally, a solid-state imaging device that converts an optical signal into an electrical signal, such as a CCD image sensor or a CMOS image sensor, has been widely used.

  The configuration of the solid-state imaging device 100c described in Patent Document 1 is shown in FIG. FIG. 6A is a top view of the solid-state imaging device 100c, and FIG. 6B is a cross-sectional view taken along the line BB of the solid-state imaging device 100c.

  As shown in FIG. 6B, the solid-state imaging device 100c includes a solid-state imaging device 101, a cover 102, and an adhesive 103. As shown in FIG. 6A, an effective pixel region 104 is formed at the center of the main surface of the solid-state image sensor 101, and the outer peripheral portion of the main surface of the solid-state image sensor 101 has a plurality of bondings. A pad 105 is formed.

The cover 102 is bonded to the main surface of the solid-state image sensor 101 via the bonding section 103 so as to cover the effective pixel region 104. The bonding portion 103 is formed in a rectangular ring shape so as to surround the effective pixel region 104, and there is a gap between the effective pixel region 104 and the cover portion 102.
JP 2005-322809 A (publication date: November 17, 2005)

  However, the conventional solid-state imaging device 100c has the following problems.

  That is, when the size of the effective pixel region 104 is enlarged as shown in FIG. 6C, or when the size of the solid-state imaging device 101 is reduced as shown in FIG. The interval between the bonding pad 104 and the bonding pad 105 is narrowed. In addition, there may be a case where the effective pixel region 104 and the bonding pad 105 cannot be sufficiently spaced for design reasons.

  In such a case, a sufficient bonding area between the bonding portion 103 and the solid-state imaging device 101 cannot be ensured. This is because in the conventional solid-state imaging device 100 c, the bonding portion 103 is disposed between the effective pixel region 104 and the bonding pad 105. For this reason, as shown in FIG. 6C and FIG. 6D, when forming the bonding portion 103, a part 106 of the bonding portion 103 is peeled off from the main surface of the solid-state imaging device 101 or the bonding portion. There is a possibility that a part 107 of 103 is lifted from the main surface of the solid-state image sensor 101. Further, if the height of the bonding portion 103 is higher than the bonding area, the bonding portion 103 may fall down.

  Such a problem is not limited to a semiconductor device (that is, a solid-state imaging device) including a semiconductor element (that is, a solid-state imaging device) in which an effective pixel region is formed, but a semiconductor having a cover portion bonded via an adhesive portion. This is a problem that can occur in general devices.

  The present invention has been made in view of such a problem, and an object of the present invention is to provide a semiconductor device in which an adhesive portion does not peel off, float, or fall down from a semiconductor element.

In order to solve the above-described problem, a semiconductor device according to the present invention is a cover that covers a part of a main surface of a semiconductor element and the semiconductor element, and is bonded to the main surface of the semiconductor element via an adhesive portion. An annular portion surrounding the effective pixel region of the semiconductor element, wherein the bonding portion is formed inside the covering region covered by the covering portion. end of the effective pixel region side is characterized and the annular portion which is formed in a linear shape, and a SakoIzuru portion from the annular portion has issued Sako toward the outside of the covered area, the .

  According to said structure, since the said adhesion part has protruded to the exterior (namely, area | region which is not covered with the said cover part) of the said covering area | region, adhesion | attachment surface-contact between the said adhesion part and the said semiconductor element is fully carried out. Can be secured. For this reason, the said adhesion part and the said semiconductor element can be adhere | attached more firmly.

  Thereby, there exists an effect of preventing that the said adhesion part peels off from the main surface of the said semiconductor element, or floats. Moreover, there exists an effect of preventing the said adhesion part falling down. Moreover, there exists an effect that the material of the said cover part can be selected more flexibly. This is because a material having a low adhesive strength can be selected by sufficiently securing the adhesive interview.

In the semiconductor device according to the present invention, a plurality of electrode pads are formed outside the covering region on the main surface of the semiconductor element, and the protruding portion protrudes between the electrode pads. It is preferable.

  According to said structure, since the said adhesion part protrudes between the said electrode pads, even if it is a case where the said electrode pad is formed in the main surface of the said semiconductor element, the said adhesion part and the said semiconductor A sufficient adhesion area with the element can be secured. For this reason, even if it is a case where the said electrode pad is formed in the main surface of the said semiconductor element, there exists the further effect that the said adhesion part and the said semiconductor element can be adhere | attached more firmly.

In the semiconductor device according to the present invention, the upper Kikutsugae portion has a light-transmitting property, it is preferable.

  According to said structure, the said cover part permeate | transmits the light which injects into the said effective pixel area | region from the outside. That is, the light incident from the outside enters the effective pixel region without being shielded by the cover. Therefore, the light receiving efficiency of the effective pixel region is not deteriorated by providing the cover. For this reason, the semiconductor device suitable for use as a solid-state imaging device such as a CCD image sensor and a CMOS image sensor can be realized.

  In the semiconductor device according to the present invention, it is preferable that the bonding portion includes a photosensitive adhesive.

  According to said structure, there exists the further effect that the shape of the said adhesion part can be formed accurately by applying a well-known photolithography technique. In addition, there is a further effect that a large number of such adhesive portions with high pattern accuracy can be formed at one time.

  Note that an optical device module including the semiconductor device including the semiconductor element in which the effective pixel region is formed is also included in the scope of the present invention.

In order to solve the above problems, a method for manufacturing a semiconductor device according to the present invention includes a first step of forming an adhesive portion on a semiconductor element, and a cover that covers a part of a main surface of the semiconductor element. And a second step of bonding to the main surface of the element via the bonding portion. In the method of manufacturing a semiconductor device , the semiconductor element is formed inside a region covered with the cover portion. An annular portion surrounding the effective pixel region, wherein the end on the effective pixel region side is formed in a straight line , and protrudes from the annular portion toward the outside of the covering region . It is provided with the urging part .

  According to said structure, since the said adhesion part has protruded to the exterior of the said coating | coated area | region, the adhesion surface-contact between the said adhesion part and the said semiconductor element can fully be ensured. For this reason, the said adhesion part and the said semiconductor element can be adhere | attached more firmly.

As a result, it is possible to manufacture a semiconductor device in which the bonding portion is not likely to be peeled off or floated from the main surface of the semiconductor element, and the bonding portion is not likely to fall down. Moreover, there exists an effect that the material of the said cover part can be selected more flexibly. This is because a material having a low adhesive strength can be selected by sufficiently securing the adhesive interview.
In the semiconductor device according to the reference example of the invention, it is preferable that the bonding portion is formed outside the effective pixel region in the main surface of the semiconductor device.
According to said structure, the said adhesion part does not interrupt | block the optical path between the said cover part and the said effective pixel area. That is, the light incident from the outside enters the effective pixel region without being blocked by the adhesive portion. Therefore, the light receiving efficiency of the effective pixel region is not deteriorated by providing the bonding portion. For this reason, the semiconductor device suitable for use as a solid-state imaging device such as a CCD image sensor and a CMOS image sensor can be realized.

  In the semiconductor device according to the present invention, since the bonding portion protrudes outside the covering region (the region covered by the cover portion), the bonding portion and the semiconductor element can be bonded more firmly. Therefore, it can prevent that an adhesion part peels off, floats, or falls.

  An embodiment of the present invention will be described below with reference to the drawings. In the present embodiment, a semiconductor device (solid-state imaging device) including a semiconductor element (solid-state imaging device) in which an effective pixel area is formed will be described, but the present invention is not limited to this. That is, the present invention can be applied to general semiconductor devices including semiconductor elements regardless of whether or not an effective pixel region is formed.

(Solid-state imaging device)
The configuration of the solid-state imaging device 100 according to the present embodiment will be described with reference to FIG. FIG. 1A is a top view of the solid-state imaging device 100, and FIG. 1B is a cross-sectional view of the solid-state imaging device 100. As illustrated in FIG. 1B, the solid-state imaging device 100 includes a solid-state imaging device 101, a cover 102, and an adhesive 103.

  The solid-state imaging device 101 is a semiconductor substrate (for example, a silicon single crystal substrate) on which a semiconductor circuit is formed, and the shape thereof is a rectangular parallelepiped. As shown in FIG. 1A, a rectangular effective pixel region 104 is formed at the center of the main surface of the solid-state image sensor 101, and the outer peripheral portion (outer surface of the main surface) of the main surface of the solid-state image sensor 101. A plurality of bonding pads 105 (electrode pads) are formed between the end and the effective pixel region 104. The effective pixel region 104 is configured to convert incident light into an electrical signal and input the electrical signal to a semiconductor circuit. The bonding pad 105 is used to electrically connect the semiconductor circuit and an external circuit (not shown). It is a configuration.

  The cover 102 is a plate-like member made of a translucent material (for example, glass), and has a rectangular shape. As shown in FIG. 1B, the cover 102 is bonded to the main surface of the solid-state image sensor 101 via the bonding portion 103 so as to cover the effective pixel region 104, and the main surface of the solid-state image sensor 101. There is a gap between the cover 102 and the cover 102. Further, as shown in FIG. 1A, the effective pixel region 104 is inside the covering region covered by the cover portion 102, and the bonding pad 105 is outside the covering region covered by the cover portion 102. Thereby, the effective pixel region 104 can be protected without obstructing the connection between the solid-state imaging device 101 and the external circuit.

  The bonding portion 103 has an annular portion 109 formed inside the covering region covered by the covering portion 102 and a protruding portion 108 protruding outside the covering region covered by the covering portion 102. . The annular portion 109 is formed in a rectangular annular shape so as to surround the effective pixel region 104. On the other hand, the protruding portion 108 extends between the bonding pad 105 and the annular portion 109 toward the outer peripheral end of the main surface. That is, it protrudes between the bonding pads 105.

  In the solid-state imaging device 101 shown in FIG. 1, the effective pixel region 104 is enlarged as in the solid-state imaging device 100c shown in FIG. For this reason, the interval between the effective pixel region 104 and the bonding pad 105 is narrow, and there is no room for widening the annular portion 109. However, as shown in FIG. 1, by providing the protruding portion 108 that protrudes between the bonding pads 105, the bonding area between the bonding portion 103 and the solid-state imaging device 101 can be increased without widening the annular portion 109. Can be spread. That is, the bonding portion 103 can be bonded to the solid-state imaging device 101 more firmly. For this reason, as shown in FIG.6 (c), it can prevent beforehand that the adhesion part 103 peels off or floats.

  Note that in the case where the effective pixel region 104 is formed inside the covering region covered by the cover portion 102, it is preferable that the cover portion 102 be formed of a light-transmitting material as described above. This is because light incident from the outside can pass through the cover 102 and enter the effective pixel region 104. Thereby, the solid-state imaging device 100 can generate an image by receiving light from the outside transmitted through the cover 102 by the light receiving element that forms the effective pixel region 104. Further, it is preferable that a space is formed between the cover 102 and the effective pixel region 104 as shown in FIG. Thereby, light from the outside transmitted through the cover 102 is incident on the effective pixel region 104 as it is, so that no optical loss occurs in the optical path between the cover 102 and the effective pixel region 104.

  Further, when the effective pixel region 104 is formed inside the covering region covered by the cover 102, it is preferable to form the adhesive portion 103 so as to surround the effective pixel region 104 as described above. This is because forming the bonding portion 103 outside the effective pixel region 104 does not cause light loss due to the bonding portion 103 in the optical path between the cover portion 102 and the effective pixel region 104.

  Moreover, it is preferable that the said adhesive part contains a photosensitive adhesive agent. This is because by including a photosensitive adhesive, the bonding portion 103 having the annular portion 109 and the protruding portion 108 can be formed with high accuracy using a known photolithography technique. In addition, it is possible to form a large number of adhesive portions 103 that require such high pattern accuracy at a time.

(Modification 1)
Next, the solid-state imaging device 100a having the reduced solid-state imaging element 101 will be described with reference to FIG.

  2A is a top view of the solid-state imaging device 100a including the reduced solid-state imaging device 101, and FIG. 2B is a cross-sectional view of the solid-state imaging device 100a. The configuration of the solid-state imaging device 100a shown in FIG. 2 is the same as that of the solid-state imaging device 100 shown in FIG.

  In the solid-state imaging device 100a shown in FIG. 2, the solid-state imaging device 101 is reduced as in the solid-state imaging device 100e shown in FIG. For this reason, the interval between the effective pixel region 104 and the bonding pad 105 is narrow, and there is no room for widening the annular portion 109. However, as shown in FIG. 2, by providing the protruding portion 108 that protrudes between the bonding pads 105, the bonding area between the bonding portion 103 and the solid-state imaging device 101 can be increased without widening the annular portion 109. Can be spread. That is, the bonding portion 103 can be bonded to the solid-state imaging device 101 more firmly. For this reason, as shown in FIG.6 (d), it can prevent beforehand that the adhesion part 103 peels off or floats.

(Modification 2)
Next, the solid-state imaging device 100b having the thick adhesive portion 103 will be described with reference to FIG.

  FIG. 3A is a top view of the solid-state imaging device 100b including the adhesive portion 103 having a large thickness, and FIG. 3B is a cross-sectional view of the solid-state imaging device 100b. The configuration of the solid-state imaging device 100b shown in FIG. 3 is the same as that of the solid-state imaging device 100 shown in FIG.

  When the thickness of the bonding portion 103 increases, the bonding portion 103 may fall down. However, as shown in FIG. 3, by providing the protruding portion 108 that protrudes between the bonding pads 105, the bonding area between the bonding portion 103 and the solid-state imaging device 101 can be increased without widening the annular portion 109. Can be spread. That is, the bonding portion 103 can be bonded to the solid-state imaging device 101 more firmly. For this reason, it can prevent beforehand that the adhesion part 103 falls down.

(Method for manufacturing solid-state imaging device)
Next, a method for manufacturing a solid-state imaging device according to the present invention will be described with reference to FIGS.

  As described below, the method for manufacturing a solid-state imaging device according to the present embodiment includes a cover forming step for forming a cover that covers an effective pixel region of the solid-state imaging device, and a plurality of solid-state imaging elements included in the semiconductor wafer. A plurality of solids included in the semiconductor wafer via the bonding portion formed in the bonding portion forming step, the bonding portion forming step for forming the bonding portion on each of the first and second covering portions formed in the bonding portion forming step. And a cover adhering step for adhering to each of the imaging elements.

  FIG. 5A shows a plate member 300 used for forming the cover portion 102, and FIG. 5B shows a plurality of cover portions 102 formed from the plate member 300. The plate material 300 is a plate material having a large area of translucency, for example, a glass plate.

  The cover 102 shown in FIG. 5B is obtained by dividing the plate member 300 shown in FIG. 5A with the dividing line 300a as a boundary. The dividing line 300a is appropriately adjusted so that the dimension of each region 300 divided by the dividing line 300a matches the dimension of the cover 102. The plate material 300 may be divided by, for example, dicing using a dicing saw.

  4A is a top view of the semiconductor wafer 200 after the bonding portion 103 is formed in the bonding portion forming step, and FIG. 4B is a cross-sectional view of the semiconductor wafer 200 taken along the line BB.

  In the bonding portion forming step, the bonding portion 103 is formed as follows, for example. That is, after an adhesive sheet having a uniform film thickness including an adhesive obtained by mixing a photosensitive adhesive and a thermosetting resin is attached to the surface of a semiconductor wafer 200 including a plurality of solid-state imaging elements 101, the annular portion 109 and The bonding portion 103 having the protruding portion 108 is formed by patterning using a known photolithography technique. Thus, production efficiency can be improved by simultaneously forming a large number of bonding portions 103 by using a photolithography technique.

  As shown in FIGS. 4A and 4B, the bonding portion 103 formed in the bonding portion forming step has a protruding portion 108 that protrudes between the bonding pads 105. Therefore, the bonding between the bonding portion 103 and the solid-state imaging element 101 is strong, and there is no possibility that the bonding portion 103 is peeled off, floats, or falls in the subsequent steps.

  FIG. 4C is a BB cross-sectional view of the semiconductor wafer 200 after the cover 102 is bonded in the cover bonding process.

  In the cover bonding process, the cover 102 is bonded to the solid-state image sensor 101 as follows, for example. That is, after positioning and placing the cover portion 102 on the bonding portion 103, the cover portion 102 and the bonding portion 103 are bonded by ultraviolet irradiation or thermosetting.

  As shown in FIG. 4C, the solid-state imaging device 101 and the cover 102 are bonded by an annular portion 109 that surrounds the effective pixel region 104. Therefore, there is no possibility that dust or water entering from the outside adheres to the effective pixel region 104 in the subsequent processes. In addition, there is no possibility of damage such as scratches in the effective pixel region 104.

  In this manner, a plurality of solid-state imaging devices 100 can be obtained by dicing the semiconductor wafer 200 with the cover 102 bonded to each solid-state imaging element 101 along the dividing line 200a.

(Module for optical devices)
The solid-state imaging device 100 described above can be mounted on an optical device module such as a camera module, for example. The configuration of the optical device module is not particularly limited. For example, Patent Document 1 includes a lens, a cylindrical body that holds the lens, and a solid-state imaging device that is disposed in the cylindrical body with a main surface facing the lens. Can be employed.

[Additional Notes]
The present invention is not limited to the above-described embodiments, and various modifications can be made within the scope shown in the claims. That is, embodiments obtained by combining technical means appropriately modified within the scope of the claims are also included in the technical scope of the present invention.

  The present invention can also be expressed as follows, for example.

  1. In a semiconductor device comprising a hollow portion between a semiconductor element and a cover covering the semiconductor element, wherein the cover includes a cover portion covering the semiconductor element and a resin portion that bonds the semiconductor element and the cover portion. A semiconductor device, wherein the resin portion has an adhesive portion and an adherend portion.

  2. 2. The semiconductor device according to 1, wherein at least one portion of the adherend portion has a resin portion extending between electrode pads.

  3. 2. The semiconductor according to 1, wherein the cover has a light-transmitting property, and the semiconductor element has a light-receiving element region in which a plurality of light-receiving elements that convert light transmitted through the cover into an electric signal are arranged. apparatus.

  4). 4. The semiconductor device according to 3, wherein at least one portion of the adherend portion has a resin portion extending between electrode pads.

  5. The cover has translucency, the semiconductor element has a light receiving element region in which a plurality of light receiving elements for converting light transmitted through the cover into an electric signal is arranged, and the adhesive portion is formed by the cover 2. The semiconductor device according to 1, wherein the semiconductor device is formed in a region that does not block an optical path between the light receiving element region.

  6). 6. The semiconductor device according to 5, wherein at least one portion of the adherend portion has a resin portion extending between electrode pads.

  7). The semiconductor device according to any one of 1 to 6, wherein the resin portion includes a photosensitive adhesive.

  8). A lens, a cylinder holding the lens, and the semiconductor device according to 3 are provided, and the cover of the semiconductor device is disposed inside the cylinder so as to face the lens. An optical device module.

  9. A lens, a cylinder that holds the lens, and the semiconductor device according to any one of 4 to 6, wherein the cover of the semiconductor device is disposed inside the cylinder so as to face the lens. A module for an optical device.

  10. In a method of manufacturing a semiconductor device having a semiconductor element and a cover that covers the semiconductor element and having a hollow portion between the semiconductor element and the cover, a step of forming a plurality of semiconductor elements on a semiconductor wafer And a step of forming resin on the plurality of semiconductor elements on the semiconductor wafer and a step of forming a bonding portion and a bonded portion corresponding to each of the plurality of semiconductor elements on the resin portion and a plate material. Forming a plurality of cover portions, bonding a step of bonding the cover portions to face each of the plurality of semiconductor elements, and attaching the plurality of semiconductor elements to which the cover portions are bonded to individual semiconductors. A method of manufacturing a semiconductor device, comprising: dividing the device into elements.

  11. 11. The method for manufacturing a semiconductor device according to 10, wherein the resin portion includes a photosensitive adhesive.

  The semiconductor device of the present invention can be suitably used as a solid-state imaging device mounted on an optical device such as a camera or a video recorder camera.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 illustrates an embodiment of the present invention, where (a) is a top view illustrating a configuration example of a solid-state imaging device, and (b) is a cross-sectional view thereof. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 illustrates an embodiment of the present invention, in which FIG. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 illustrates an embodiment of the present invention, in which FIG. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 shows an embodiment of the present invention, in which (a) is a top view showing a semiconductor wafer on which an adhesive portion is formed, (b) is a cross-sectional view taken along line BB, and (c) is a semiconductor wafer. It is sectional drawing of the semiconductor wafer 200 after adhering to. 1 shows an embodiment of the present invention, (a) shows a plate material before dicing, and (b) shows a cover obtained by dicing. FIG. 2 shows a conventional technique, in which (a) is a top view of a solid-state imaging device, (b) is a cross-sectional view thereof, (c) and (d) are peeling of an adhesive portion, and a solid-state imaging device when floating occurs. It is a top view.

Explanation of symbols

100 Solid-state imaging device (semiconductor device)
100a to 100e Solid-state imaging device (semiconductor device)
101 Solid-state imaging device (semiconductor device)
102 Cover 103 Bonding 104 Effective Pixel Area 105 Bonding Pad (Electrode Pad)
106 Resin peeling 107 Resin floating 108 Extending portion 109 Ring portion 200 Semiconductor wafer 200a Dividing line 300 Plate member 300a Dividing line

Claims (6)

In a semiconductor device comprising: a semiconductor element; and a cover that covers a part of the main surface of the semiconductor element, the cover being bonded to the main surface of the semiconductor element via an adhesive portion.
The bonding portion is an annular portion that is formed inside the covering region covered by the covering portion and surrounds the periphery of the effective pixel region of the semiconductor element, and an end portion on the effective pixel region side is linear. A semiconductor device comprising: an annular portion formed; and a protruding portion protruding from the annular portion toward the outside of the covering region. On the main surface of the semiconductor element, a plurality of electrode pads are formed outside the covering region,
The protruding portion protrudes between the electrode pads,
The semiconductor device according to claim 1. Upper Kikutsugae portion has a light-transmitting property,
The semiconductor device according to claim 1, wherein: The adhesive part includes a photosensitive adhesive,
The semiconductor device according to any one of claims 1 to 3, characterized in that. In an optical device module, characterized in that it comprises a semiconductor device according to any one of claims 1 to 4. A first step of forming an adhesive portion on the semiconductor element; and a second step of adhering a cover portion covering a part of the main surface of the semiconductor element to the main surface of the semiconductor element via the adhesive portion. In the manufacturing method of the semiconductor device,
The bonding portion is an annular portion that is formed inside the covering region covered by the covering portion and surrounds the periphery of the effective pixel region of the semiconductor element, and an end portion on the effective pixel region side is linear. A method of manufacturing a semiconductor device, comprising: an annular portion that is formed; and a protruding portion that protrudes from the annular portion toward the outside of the covering region.

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