JP2003142621A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JP2003142621A JP2003142621A JP2001338343A JP2001338343A JP2003142621A JP 2003142621 A JP2003142621 A JP 2003142621A JP 2001338343 A JP2001338343 A JP 2001338343A JP 2001338343 A JP2001338343 A JP 2001338343A JP 2003142621 A JP2003142621 A JP 2003142621A
- Authority
- JP
- Japan
- Prior art keywords
- resin layer
- lid
- base
- semiconductor device
- cover
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
Abstract
Description
【発明の詳細な説明】
【０００１】
【発明の属する技術分野】本発明は、ＩＣ，ＬＳＩ等の
半導体集積回路素子、半導体レーザ（ＬＤ），フォトダ
イオード（ＰＤ），ＣＣＤ（Charge Coupled Devic
e），ＥＰＲＯＭ（Erasable and Programmable ＲＯ
Ｍ）等の光半導体素子などの半導体素子を半導体素子収
納用パッケージ内に気密封止して収納して成る半導体装
置に関する。
【０００２】
【従来の技術】従来の半導体装置は、図６に示すよう
に、半導体素子収納用パッケージ（以下、半導体パッケ
ージという）１１を構成するとともにセラミックス等の
絶縁材料から成る基体１６を具備しており、基体１６上
面の凹部１６ａの底面に半導体素子１７を載置し、半導
体素子１７の電極を基体１６内部に形成したメタライズ
配線層にボンディングワイヤ１８を介して電気的に接続
し、基体１６上面の凹部１６ａの周囲の略全周に設けら
れた樹脂層１２を介して蓋体１５を接着して構成されて
いる。
【０００３】従来、図６のように内部に半導体素子１７
を収納する半導体パッケージ１１を樹脂層１２で接着さ
れた蓋体１５によって気密封止する場合、図７に示すよ
うに、樹脂層１２の平面視形状は、内外を連通する隙間
１４が一部に形成された直線状の枠状の塗布パターンと
されていた。このような形状の樹脂層１２とすることに
より、蓋体１５を樹脂層１２を介して基体１６上面に載
置し上方より加圧することで、基体１６と蓋体１５とか
ら成る容器より内部ガスを一部外部へ放出し、容器内部
のガス圧力が外部より高くならないように調整すること
ができる。また、このとき樹脂層１２は基体１６上面の
凹部１６ａの周囲と蓋体１５下面の外周端との間で適度
に広がり、それに伴って樹脂層１２の隙間１４が広がっ
た樹脂層１２で埋まることで閉じられて、半導体装置の
良好な気密封止が可能となる。
【０００４】
【発明が解決しようとする課題】しかしながら、上記従
来の半導体装置においては、基体１６と蓋体１５との間
に樹脂層１２を図７の塗布パターンで形成するに際し
て、蓋体１５下面の外周端の位置に当接するように樹脂
層１２を形成すると、樹脂層１２は基体１６上面および
蓋体１５下面の外周端で接着されることとなるため、蓋
体１５にその主面の面方向に略平行な外力が加わった際
等には蓋体１５が基体１６から剥離する場合があった。
即ち、蓋体１５の接着強度が不十分であり外力や機械的
衝撃に弱いという問題点があった。
【０００５】そこで、上記のような蓋体１５の接着強度
の不足を解消するために、樹脂層１２が蓋体１５の側面
に廻り込むように樹脂層１２の塗布パターンの幅を大き
くして形成することが考えられる。しかし、この場合に
は、蓋体１５を基体１６上面に載置し加圧した際、樹脂
層１２が蓋体１５の側面を這い上がり蓋体１５の上面に
まで付着し、蓋体１５の上面で樹脂の突起物が多数形成
されることになる。そのため、例えばＣＣＤ等の撮像素
子等を収納した光半導体装置においては、蓋体１５上面
を基準面として蓋体１５上方にレンズ等の光学部品を組
み込む際の位置決めができないといった問題点があっ
た。
【０００６】従って、本発明は上記問題点に鑑みて完成
されたものであり、その目的は、蓋体を基体に接着する
ための樹脂層の接着強度を向上させるとともに、その樹
脂層が蓋体の側面から上面に這い上がって上面に付着す
ることを防止して蓋体上面がレンズ等の光学部品を組み
込む際の良好な基準面として使用できる半導体装置を提
供することにある。
【０００７】
【課題を解決するための手段】本発明の半導体装置は、
上面に凹部が形成された基体と、前記凹部の底面に載置
された半導体素子と、前記基体の上面の前記凹部の周囲
の略全周に設けられた樹脂層と、該樹脂層の上部で接着
されて前記半導体素子を封止する蓋体とを具備した半導
体装置において、前記樹脂層は、幅広部と幅狭部とが交
互に形成された形状であり、かつ前記幅広部で前記蓋体
の下面の外周端および側面に接着されていることを特徴
とする。
【０００８】本発明は、上記の構成により、樹脂層に幅
広部と幅狭部とが設けられていることにより、その塗布
面積が増大するとともに幅広部で蓋体の下面の外周端お
よび側面に接着されるため、蓋体の接着強度が大幅に向
上する。また、蓋体を基体上面に載置し加圧した際に幅
広部の樹脂層は蓋体の側面に廻り込むが、隣接する両側
に幅狭部があるため幅広部の樹脂層は蓋体側面の横方向
へと広がり易くなっており、その結果蓋体の上面へ這い
上がることがなくなる。従って、蓋体上面に樹脂層が付
着しないため、半導体装置の蓋体上方にレンズ等の光学
部品を組み込む際に蓋体上面を良好な基準面として使用
できる。
【０００９】
【発明の実施の形態】本発明の半導体装置について以下
に詳細に説明する。図１は、本発明の半導体装置につい
て実施の形態の一例を示す平面図、図２は図１のＡ−
Ａ'線における断面図、図３は図１のＢ−Ｂ'線における
断面図である。これらの図に示すように、本発明の半導
体装置は、上面に凹部６ａが形成された基体６と、凹部
６ａの底面に載置され接着された半導体素子７と、基体
６の上面の凹部６ａの周囲の略全周に設けられた樹脂層
２と、樹脂層２の上部で接着されて半導体素子７を封止
する蓋体５とを具備しており、樹脂層２は、幅広部２ａ
と幅狭部２ｂとが交互に形成された形状であり、かつ幅
広部２ａで蓋体５の下面の外周端および側面に接着され
ている。従って、樹脂層２は、幅広部２ａでは基体６上
面と蓋体５下面の外周端とが接着されるうえ、幅広部２
ａに蓋体５の側面を覆うようにメニスカス３が形成され
ており、幅狭部２ｂでは基体６上面と蓋体５下面の外周
端とが接着される。
【００１０】本発明の基体６はセラミックス，樹脂等の
絶縁材料からなり、基体６は底板部と底板部の上面の外
周部に接合された別体の枠状の側壁部とから構成されて
いる。また、基体６は底板部と側壁部とが一体的に形成
された略直方体のものであってもよい。この基体６の凹
部６ａの底面の外周部には電極パッドが設けられてお
り、半導体素子７の電極がその電極パッドにＡｕ、Ａｌ
等からなるボンディングワイヤ８によって電気的に接続
されている。
【００１１】本発明の基体６は、セラミックスから成る
場合、アルミナ（Ａｌ2Ｏ3）セラミックス、窒化アルミ
ニウム（ＡｌＮ）セラミックス、炭化珪素（ＳｉＣ）セ
ラミックス、窒化珪素（Ｓｉ3Ｎ4）セラミックス、ガラ
スセラミックス等のセラミックスから成る。この基体６
は、外部回路基板等に実装される際の熱で膨張し、半導
体素子７にストレスを与える場合があることから、熱膨
張係数が５×１０-6〜１０×１０-6／℃程度と小さいア
ルミナを主成分としたセラミックスが好ましい。
【００１２】また、本発明の蓋体５は、半導体素子７が
ＣＣＤ等の外光を受光する光半導体素子である場合、ガ
ラス，石英，サファイヤ（単結晶アルミナ），透明樹脂
等からなる透光性のものがよい。この蓋体５は、その外
形寸法が基体６上面の外形寸法より小さいものがよく、
この場合樹脂層２の幅広部２ａに蓋体５の側面を覆うよ
うにメニスカス３が形成され易くなる。勿論、蓋体５の
外形寸法は基体６の凹部６ａよりは大きい。
【００１３】半導体素子７は、ＩＣ，ＬＳＩ等の半導体
集積回路素子、またはＬＤ，ＰＤ，ラインセンサ，イメ
ージセンサ，ＣＣＤ（Charge Coupled Device），ＥＰ
ＲＯＭ（Erasable and Programmable ＲＯＭ）等の受光
用の光半導体素子、またはこれらの受光部を有する光半
導体素子である。
【００１４】図４は、本発明の樹脂層２を示し、基体６
と蓋体５との間で広がった樹脂層２の部分平面図であ
る。また図５は、ディスペンサ装置を用いて断続的に略
円状に塗布された複数の樹脂層２の塗布パターンを示す
ものであり、半導体装置の基体上面の平面図である。図
５のように、樹脂層２の硬化前の粘度や塗布面積によっ
ては、蓋体５の接着前に樹脂層２を独立した略円状とし
て塗布することもできる。この場合、個々の樹脂層２間
には隙間４が設けられる。
【００１５】図５のように樹脂層２を独立した略円状の
塗布パターンで塗布した後、樹脂層２上に蓋体５を載置
し、蓋体５を上方より加圧することで、各樹脂層２間の
隙間４から内部ガスを一部外部に放出させるとともに各
樹脂層２が繋がり、樹脂層２が幅広部２ａと幅狭部２ｂ
とが交互に形成された形状となり、半導体パッケージ１
内部が気密封止される。
【００１６】また図５において、樹脂層２の塗布パター
ンについて、樹脂層２の塗布幅の１／８〜１／２程度が
蓋体５外周端より外に出るような塗布パターンとするの
がよい。その場合、蓋体５を基体６上面に載置加圧した
際に、塗布幅の１／４程度の樹脂層２によってメニスカ
ス３が形成できることになる。蓋体５外周端より外に出
る樹脂層２が塗布幅の１／８未満ではメニスカス３の形
成が困難であり、１／２を超えると樹脂層２が蓋体５の
上面に達し易くなる。
【００１７】そして、各樹脂層２間の隙間４は結果的に
樹脂層２の幅狭部２ｂとなり、蓋体５下面の外周端付近
まで広がる。樹脂層２の幅狭部２ｂは幅方向に広がっ
て、凹部６ａ側においても結果的に幅広部２ａに比べて
１／４程度幅が小さくなっている。従って、幅狭部２ｂ
の幅は幅広部２ａの１／２程度の幅となる。
【００１８】幅広部２ａの幅の１／４程度の樹脂層２
が、基体６の上面と蓋体５の側面に蓋体５上面に達しな
いメニスカス３を形成するのに好適である。これによ
り、基体６の上面において樹脂層２の幅広部２ａが基体
６の側壁の内外側面から溢れない程度に広がり、蓋体５
の側面へ幅広部２ａの幅の１／４程度の樹脂層２が蓋体
５の厚さ以下で廻り込むことになる。メニスカス３の形
状は、蓋体５の側面の上部より基体６の上面に向かって
広がった裾広がり状となる。
【００１９】またメニスカス３を上面から見た寸法関係
は、図４に示すように、幅狭部２ｂ間の間隔（幅広部２
ａ間の間隔に略等しい）Ｌ２は、幅広部２ａの１／４程
度の幅（幅広部２ａの蓋体５端からの突出幅）Ｌ１の
２．５〜３．５倍になるのがよい。２．５倍未満の場
合、幅狭部２ｂに流れ込む樹脂層２が少ないため、幅狭
部２ｂの幅が極端に狭くなり、気密封止が困難になる。
３．５倍を超えると、樹脂層２が蓋体５の側面にて繋が
り、また蓋体５の上面に這い上がり易くなる。
【００２０】間隔Ｌ２は０．６〜１．８ｍｍ程度がよ
く、０．６ｍｍ未満では、蓋体５の端から突出する樹脂
層２の量が少なくなるため、蓋体５の側面にメニスカス
３が形成されにくくなる。１．８ｍｍを超えると、蓋体
５の端から突出する樹脂層２の量が多くなるため、樹脂
層２が蓋体５の側面を這い上がり蓋体５の上面に這い上
がり易くなる。
【００２１】図５の樹脂層２の塗布パターンは、略円形
でも良いし、四角形等の略方形でも良い。樹脂層２の形
状はディスペンスニードルの形状を変更することにより
容易に変更することができる。
【００２２】上記のように樹脂層２が蓋体５の側面にま
で廻り込んでメニスカス３を形成することによって、蓋
体５が基体６に強固に接着された半導体装置が得られ
る。
【００２３】また図５において、塗布された樹脂層２の
厚みは蓋体５の厚み以下がよく、隙間４は蓋体５の厚み
の１／２〜２／３程度が好ましい。隙間４を蓋体の厚み
の１／２未満にすると、蓋体５を基体６上面に載置し加
圧した際に凹部６ａ内部のガスを放出する前に樹脂層２
同士が繋がり、半導体装置を作製した後に凹部６ａ内部
のガスが膨張して蓋体５が剥離する場合があり、良好な
封止構造が得られないことがある。また、隙間４が蓋体
５の厚みの２／３より大きくなると、蓋体５を基体６上
面に載置し加圧した際に隣接する樹脂層２が繋がらず、
気密封止できない場合があり、良好な封止構造が得られ
ないことがある。
【００２４】本発明において、樹脂層２の幅狭部２ｂの
幅は幅広部２ａよりも小さくかつ１／２以上となるよう
にその粘度や塗布量を調整して塗布するのが良い。
【００２５】具体的には、蓋体５の厚さは０．４〜０．
７ｍｍ程度、樹脂層２の幅広部２ａの幅は０．８〜１．
６ｍｍ程度、幅狭部２ｂの幅は０．４〜０．８ｍｍ程度
である。
【００２６】樹脂層２は、アクリル系樹脂，エポキシ系
樹脂，シリコーン系樹脂，ポリエーテルアミド系樹脂等
から成る。また樹脂層２は、余計な外光の入射を遮断す
るために、黒色，茶色，暗緑色，濃青色等の暗色系の染
料、カーボン，酸化鉄等の顔料を混入させても良い。こ
の樹脂層２はトルエンやアセトン等の有機溶剤で希釈
し、ディスペンサ装置を用いて塗布して塗布パターンを
形成するものであり、ディスペンサ装置によって塗布パ
ターンや厚みを容易に制御できる。
【００２７】蓋体５を接着する際には、基体６上面に樹
脂層２を塗布し、蓋体５を１９６００〜２９４００Ｐａ
程度の加重で加圧することで、凹部６ａ内の空気が一部
外部へ流出し、樹脂層２の広がりによって隙間４が塞が
る。その後、紫外線（ＵＶ）照射装置を用いて約６Ｊ／
ｃｍ2のエネルギーで樹脂層２にＵＶ照射を行い硬化さ
せることにより、蓋体５の上方への引張強度試験で約
９．８Ｎの強度が得られる。
【００２８】また、図５のように樹脂層２を独立した略
円形の塗布パターンとすることにより、蓋体５の外周端
付近に塗布されていても、樹脂層２は蓋体５の上面に這
い上がることがなく、蓋体５の側面に図２，図３が示す
ようなメニスカス３がある部分とメニスカス３がない部
分が連続的に形成される。メニスカス３はその厚みが蓋
体５よりも小さく、基体６の上面に蓋体５の厚み程度の
幅で広がって形成されるので、蓋体５の側面への横方向
からの衝撃等の外力に対する強度が向上し、機械的強度
に優れた半導体装置が得られる。
【００２９】なお、樹脂層２の塗布パターンは、図５の
形状に限らず、幅広部２ａと幅狭部２ｂとが交互に形成
された形状であってもよい。
【００３０】
【実施例】本発明の実施例について以下に説明する。
【００３１】（実施例）まず、ＣＣＤから成る半導体素
子７を収容したアルミナセラミックスからなる基体６の
上面に、図５のように、略円形の各樹脂層２が約２００
μｇの質量であるエポキシ樹脂から成る樹脂層２の塗布
パターンを形成した。その後、基体６の上面に、外形寸
法が基体６上面よりも小さく凹部６ａよりも大きいガラ
スから成る蓋体５を載置し、２４５００Ｐａの加重で蓋
体５を上方より加圧し、約６Ｊ／ｃｍ2のエネルギーで
波長３６５ｎｍの紫外線を照射することにより樹脂層２
を硬化させて、本発明の半導体装置Ａを５個作製した。
【００３２】このとき、蓋体５の厚さは０．５５ｍｍ、
塗布された樹脂層２の厚みは０．５ｍｍ、隙間４は０．
３ｍｍであった。また、作製後の半導体装置Ａにおける
樹脂層２について、樹脂層２の幅広部２ａの幅は１．２
ｍｍ、幅狭部２ｂの幅は０．６ｍｍであり、幅狭部２ｂ
の間隔Ｌ２はＬ２＝０．９ｍｍであり、幅広部２ａの１
／４の幅であるＬ１はＬ１＝０．３ｍｍであり、Ｌ２＝
３Ｌ１であった。
【００３３】また、図７に示すように、ＣＣＤから成る
半導体素子１７を収容したアルミナセラミックスからな
る基体１６の上面に、１つの隙間１４のある枠状の塗布
パターンとされたエポキシ樹脂から成るの樹脂層１２を
塗布した。次に、基体１６上面にガラス製の蓋体１５を
載置し、２４５００Ｐａの加重で蓋体１５を上方より加
圧し、約６Ｊ／ｃｍ2のエネルギーで波長３６５ｎｍの
紫外線を照射することにより樹脂層１２を硬化させて、
従来構成の半導体装置Ｂを５個作製した。
【００３４】そして、半導体装置Ａ，Ｂについて蓋体
５，１５の接着強度を測定するために、半導体装置Ａ，
Ｂを固定した状態で蓋体５，１５を上方に引っ張る引張
り強度試験を行った。この評価結果を下記表１に示す。
【００３５】
【表１】【００３６】表１より、本発明の半導体装置Ａは従来の
半導体装置Ｂに比べて引張り強度が平均値で２７％向上
したことが判った。
【００３７】なお、本発明の上記実施の形態および実施
例に限定されず、本発明の要旨を逸脱しない範囲で種々
の変更を施すことは何ら差し支えない。
【００３８】
【発明の効果】本発明は、上面に凹部が形成された基体
と、凹部の底面に載置された半導体素子と、基体の上面
の凹部の周囲の略全周に設けられた樹脂層と、樹脂層の
上部で接着されて半導体素子を封止する蓋体とを具備し
ており、樹脂層は、幅広部と幅狭部とが交互に形成され
た形状であり、かつ幅広部で蓋体の下面の外周端および
側面に接着されていることにより、樹脂層の塗布面積が
増大するとともに幅広部で蓋体の下面の外周端および側
面に接着されるため、蓋体の接着強度が大幅に向上す
る。また、蓋体を基体上面に載置し加圧した際に幅広部
の樹脂層は蓋体の側面に廻り込むが、隣接する両側に幅
狭部があるため幅広部の樹脂層は蓋体側面の横方向へと
広がり易くなっており、その結果蓋体の上面へ這い上が
ることがなくなる。従って、蓋体上面に樹脂層が付着し
ないため、半導体装置の蓋体上方にレンズ等の光学部品
を組み込む際に蓋体上面を良好な基準面として使用でき
る。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor integrated circuit device such as an IC and an LSI, a semiconductor laser (LD), a photodiode (PD), and a CCD (Charge Coupled Device).
e), EPROM (Erasable and Programmable RO)
The present invention relates to a semiconductor device in which a semiconductor element such as an optical semiconductor element such as M) is hermetically sealed and housed in a semiconductor element housing package. 2. Description of the Related Art As shown in FIG. 6, a conventional semiconductor device comprises a package 11 for housing a semiconductor element (hereinafter, referred to as a semiconductor package) and a base 16 made of an insulating material such as ceramics. The semiconductor element 17 is placed on the bottom surface of the concave portion 16 a on the upper surface of the base 16, and the electrodes of the semiconductor element 17 are electrically connected to the metallized wiring layer formed inside the base 16 via bonding wires 18. The cover 15 is adhered to the cover 15 via a resin layer 12 provided substantially all around the recess 16a on the upper surface. Conventionally, as shown in FIG.
When the semiconductor package 11 accommodating the resin is hermetically sealed with a lid 15 bonded with a resin layer 12, as shown in FIG. 7, the shape of the resin layer 12 in plan view is such that a gap 14 communicating the inside and the outside is partially formed. The formed linear frame-shaped coating pattern was used. With the resin layer 12 having such a shape, the lid 15 is placed on the upper surface of the base 16 via the resin layer 12 and pressurized from above. Is released to the outside and the gas pressure inside the container can be adjusted so as not to be higher than the outside. Further, at this time, the resin layer 12 is appropriately spread between the periphery of the concave portion 16a on the upper surface of the base 16 and the outer peripheral edge of the lower surface of the lid 15, and the gap 14 between the resin layers 12 is buried with the widened resin layer 12. The semiconductor device can be hermetically sealed. However, in the above-described conventional semiconductor device, when the resin layer 12 is formed between the base 16 and the lid 15 according to the application pattern shown in FIG. When the resin layer 12 is formed so as to be in contact with the position of the outer peripheral end of the cover 15, the resin layer 12 is bonded to the outer peripheral end of the upper surface of the base 16 and the lower surface of the lid 15, so that the surface of the main surface is attached to the lid 15. When an external force substantially parallel to the direction is applied, the lid 15 may be separated from the base 16 in some cases.
That is, there has been a problem that the adhesive strength of the lid 15 is insufficient and the lid 15 is weak against external force and mechanical impact. Therefore, in order to solve the above-mentioned shortage of the adhesive strength of the lid 15, the width of the application pattern of the resin layer 12 is increased so that the resin layer 12 goes around the side surface of the lid 15. It is possible to do. However, in this case, when the cover 15 is placed on the upper surface of the base 16 and pressed, the resin layer 12 climbs up the side surface of the cover 15 and adheres to the upper surface of the cover 15, and the upper surface of the cover 15 Thus, many resin protrusions are formed. For this reason, in an optical semiconductor device containing an image pickup device such as a CCD, for example, there is a problem that positioning cannot be performed when an optical component such as a lens is incorporated above the lid 15 with the upper surface of the lid 15 as a reference plane. Accordingly, the present invention has been completed in view of the above-mentioned problems, and an object of the present invention is to improve the adhesive strength of a resin layer for bonding a lid to a substrate, and to improve the resin layer on the lid. It is an object of the present invention to provide a semiconductor device in which the upper surface of the lid can be used as a good reference surface when incorporating an optical component such as a lens, by preventing the upper surface of the lid from being attached to the upper surface by crawling from the side surface. [0007] A semiconductor device according to the present invention comprises:
A base having a concave portion formed on the upper surface, a semiconductor element mounted on the bottom surface of the concave portion, a resin layer provided substantially all around the concave portion on the upper surface of the base, and an upper portion of the resin layer. In a semiconductor device having a lid that is bonded and seals the semiconductor element, the resin layer has a shape in which wide portions and narrow portions are alternately formed, and the lid portion is formed by the wide portion. Characterized in that it is adhered to the outer peripheral edge and the side surface of the lower surface of the. According to the present invention, the wide area and the narrow area are provided in the resin layer according to the above structure, so that the coating area is increased and the wide area is formed on the outer peripheral edge and the side surface of the lower surface of the lid. Since they are bonded, the bonding strength of the lid is greatly improved. Also, when the lid is placed on the upper surface of the base and pressed, the wide portion of the resin layer wraps around the side of the lid. Is easy to spread in the lateral direction, and as a result, it does not crawl up to the upper surface of the lid. Therefore, since the resin layer does not adhere to the upper surface of the lid, the upper surface of the lid can be used as a good reference surface when an optical component such as a lens is incorporated above the lid of the semiconductor device. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A semiconductor device according to the present invention will be described in detail below. FIG. 1 is a plan view showing an example of an embodiment of a semiconductor device of the present invention, and FIG.
FIG. 3 is a cross-sectional view taken along line BB ′ of FIG. 1. As shown in these figures, the semiconductor device of the present invention includes a base 6 having a concave portion 6a formed on the upper surface, a semiconductor element 7 mounted and bonded on the bottom surface of the concave portion 6a, and a concave portion 6a formed on the upper surface of the base 6. , And a lid 5 adhered on the upper portion of the resin layer 2 to seal the semiconductor element 7, and the resin layer 2 has a wide portion 2a.
And the narrow portion 2b are alternately formed, and are bonded to the outer peripheral edge and the side surface of the lower surface of the lid 5 at the wide portion 2a. Accordingly, the resin layer 2 is bonded to the upper surface of the base 6 and the outer peripheral edge of the lower surface of the lid 5 at the wide portion 2a,
The meniscus 3 is formed so as to cover the side surface of the lid 5 on a, and the upper surface of the base 6 and the outer peripheral edge of the lower surface of the lid 5 are bonded in the narrow portion 2b. The base 6 of the present invention is made of an insulating material such as ceramics or resin. The base 6 is composed of a bottom plate and a separate frame-shaped side wall joined to the outer periphery of the upper surface of the bottom plate. . The base 6 may be a substantially rectangular parallelepiped in which the bottom plate and the side wall are integrally formed. An electrode pad is provided on the outer peripheral portion of the bottom surface of the concave portion 6a of the base 6, and the electrodes of the semiconductor element 7 are made of Au, Al
And the like. When the substrate 6 of the present invention is made of ceramics, alumina (Al 2 O 3 ) ceramics, aluminum nitride (AlN) ceramics, silicon carbide (SiC) ceramics, silicon nitride (Si 3 N 4 ) ceramics, glass ceramics Etc. This base 6
Has a small coefficient of thermal expansion of about 5 × 10 −6 to 10 × 10 −6 / ° C., because it expands due to heat when mounted on an external circuit board or the like and may give stress to the semiconductor element 7. Ceramics containing alumina as a main component are preferred. When the semiconductor element 7 is an optical semiconductor element for receiving external light, such as a CCD, the lid 5 of the present invention is made of a light-transmitting material made of glass, quartz, sapphire (single-crystal alumina), transparent resin, or the like. Sex is good. The lid 5 preferably has an outer dimension smaller than the outer dimension of the upper surface of the base 6.
In this case, the meniscus 3 is easily formed so as to cover the side surface of the lid 5 on the wide portion 2a of the resin layer 2. Of course, the outer dimensions of the lid 5 are larger than the recesses 6 a of the base 6. The semiconductor element 7 is a semiconductor integrated circuit element such as an IC or LSI, or an LD, PD, line sensor, image sensor, CCD (Charge Coupled Device), EP
It is an optical semiconductor device for light reception such as a ROM (Erasable and Programmable ROM) or an optical semiconductor device having these light receiving portions. FIG. 4 shows the resin layer 2 of the present invention,
FIG. 5 is a partial plan view of a resin layer 2 spread between the cover 5 and the cover 5. FIG. 5 shows a coating pattern of a plurality of resin layers 2 intermittently applied in a substantially circular shape using a dispenser device, and is a plan view of a top surface of a base of the semiconductor device. As shown in FIG. 5, the resin layer 2 may be applied as an independent substantially circular shape before the lid 5 is bonded, depending on the viscosity and application area of the resin layer 2 before curing. In this case, gaps 4 are provided between the individual resin layers 2. As shown in FIG. 5, after the resin layer 2 is applied in an independent substantially circular coating pattern, the lid 5 is placed on the resin layer 2 and the lid 5 is pressed from above, whereby Part of the internal gas is released to the outside from the gap 4 between the resin layers 2 and the respective resin layers 2 are connected to each other, so that the resin layer 2 has a wide portion 2a and a narrow portion 2b.
Are alternately formed, and the semiconductor package 1
The inside is hermetically sealed. In FIG. 5, the coating pattern of the resin layer 2 is preferably such that about ８ to の of the coating width of the resin layer 2 is outside the outer peripheral edge of the lid 5. . In this case, when the lid 5 is placed on the upper surface of the base 6 and pressed, the meniscus 3 can be formed by the resin layer 2 having a width of about 1/4 of the application width. If the thickness of the resin layer 2 protruding from the outer peripheral edge of the lid 5 is less than 1/8 of the application width, it is difficult to form the meniscus 3, and if it exceeds 1/2, the resin layer 2 tends to reach the upper surface of the lid 5. The gap 4 between the resin layers 2 eventually becomes the narrow portion 2b of the resin layer 2 and spreads to the vicinity of the outer peripheral edge of the lower surface of the lid 5. The narrow portion 2b of the resin layer 2 spreads in the width direction, and consequently also on the concave portion 6a side, the width is reduced by about 1/4 as compared with the wide portion 2a. Therefore, the narrow portion 2b
Is about half the width of the wide portion 2a. The resin layer 2 having a width of about 1/4 of the width of the wide portion 2a
Is suitable for forming the meniscus 3 that does not reach the upper surface of the lid 5 on the upper surface of the base 6 and the side surface of the lid 5. Thus, the wide portion 2a of the resin layer 2 spreads on the upper surface of the base 6 so as not to overflow from the inner and outer surfaces of the side wall of the base 6, and the lid 5
The resin layer 2 having a width of about 1/4 of the width of the wide portion 2a is wrapped around the side surface of the cover 5 below the thickness of the lid 5. The shape of the meniscus 3 is a hem-spread shape that extends from the upper portion of the side surface of the lid 5 toward the upper surface of the base 6. The dimensional relationship of the meniscus 3 as viewed from above is shown in FIG. 4 as the distance between the narrow portions 2b (the wide portions 2b).
L2 is approximately 2.5 times to 3.5 times the width L1 of the wide portion 2a (approximately equal to the interval between the wide portions 2a) (the width of the wide portion 2a protruding from the end of the lid 5). . In the case of less than 2.5 times, the resin layer 2 flowing into the narrow portion 2b is small, so that the width of the narrow portion 2b becomes extremely narrow, and it becomes difficult to hermetically seal.
When the ratio exceeds 3.5 times, the resin layer 2 is connected to the side surface of the lid 5, and easily crawls on the upper surface of the lid 5. The distance L2 is preferably about 0.6 to 1.8 mm. If the distance L2 is less than 0.6 mm, the amount of the resin layer 2 protruding from the end of the lid 5 is reduced. It is difficult to form. If it exceeds 1.8 mm, the amount of the resin layer 2 protruding from the end of the lid 5 increases, so that the resin layer 2 easily climbs up the side surface of the lid 5 and rises up to the upper surface of the lid 5. The application pattern of the resin layer 2 in FIG. 5 may be substantially circular or may be substantially square such as a square. The shape of the resin layer 2 can be easily changed by changing the shape of the dispense needle. By forming the meniscus 3 by the resin layer 2 wrapping around the side surface of the lid 5 as described above, a semiconductor device in which the lid 5 is firmly adhered to the base 6 can be obtained. In FIG. 5, the thickness of the applied resin layer 2 is preferably equal to or less than the thickness of the lid 5, and the gap 4 is preferably about ２〜 to ／ of the thickness of the lid 5. When the gap 4 is less than half the thickness of the lid, when the lid 5 is placed on the upper surface of the base 6 and pressurized, the resin layer 2 is released before the gas inside the recess 6a is released.
When the semiconductor device is manufactured, the gas inside the concave portion 6a may expand and the lid 5 may peel off after the semiconductor device is manufactured, and a good sealing structure may not be obtained. When the gap 4 is larger than ／ of the thickness of the lid 5, when the lid 5 is placed on the upper surface of the base 6 and pressed, the adjacent resin layers 2 are not connected, and
Hermetic sealing may not be possible, and a good sealing structure may not be obtained. In the present invention, it is preferable that the width and width of the narrow portion 2b of the resin layer 2 are adjusted to adjust the viscosity and the application amount so that the width of the narrow portion 2b is smaller than the wide portion 2a and becomes 1/2 or more. Specifically, the thickness of the lid 5 is 0.4 to 0.5.
The width of the wide portion 2a of the resin layer 2 is about 0.8 to 1 mm.
The width of the narrow portion 2b is about 0.4 mm to about 6 mm. The resin layer 2 is made of an acrylic resin, an epoxy resin, a silicone resin, a polyetheramide resin, or the like. Further, the resin layer 2 may be mixed with a black dye, a dark dye such as brown, dark green, or dark blue, or a pigment such as carbon or iron oxide in order to block the incidence of extraneous external light. The resin layer 2 is diluted with an organic solvent such as toluene or acetone, and is applied using a dispenser device to form an application pattern. The application pattern and thickness can be easily controlled by the dispenser device. When bonding the lid 5, the resin layer 2 is applied on the upper surface of the base 6, and the lid 5 is applied at 19600 to 29400 Pa
By applying pressure with a slight load, the air in the recess 6 a partially flows out to the outside, and the gap 4 is closed by the spread of the resin layer 2. Then, about 6 J /
By irradiating and curing the resin layer 2 by UV irradiation with an energy of cm 2, a strength of about 9.8 N is obtained in a tensile strength test above the lid 5. Further, by forming the resin layer 2 into an independent substantially circular coating pattern as shown in FIG. 5, even if the resin layer 2 is applied near the outer peripheral edge of the lid 5, the resin layer 2 2 and 3, a portion having the meniscus 3 and a portion having no meniscus 3 are continuously formed on the side surface of the lid 5 without crawling. Since the meniscus 3 has a thickness smaller than that of the lid 5 and is formed on the upper surface of the base 6 so as to extend with a width of about the thickness of the lid 5, the meniscus 3 is resistant to external force such as a lateral impact on the side surface of the lid 5. A semiconductor device having improved strength and excellent mechanical strength can be obtained. The application pattern of the resin layer 2 is not limited to the shape shown in FIG. 5, but may be a shape in which the wide portions 2a and the narrow portions 2b are alternately formed. An embodiment of the present invention will be described below. (Embodiment) First, on the upper surface of a substrate 6 made of alumina ceramics accommodating a semiconductor element 7 made of a CCD, as shown in FIG.
An application pattern of the resin layer 2 made of epoxy resin having a mass of μg was formed. Thereafter, the lid 5 made of glass whose outer dimensions are smaller than the upper surface of the substrate 6 and larger than the concave portion 6a is placed on the upper surface of the substrate 6, and the lid 5 is pressed from above with a load of 24500 Pa to about 6 J / cm 2. The resin layer 2 is irradiated with ultraviolet light having a wavelength of 365 nm at an energy of 2
Was cured to produce five semiconductor devices A of the present invention. At this time, the thickness of the lid 5 is 0.55 mm,
The thickness of the applied resin layer 2 is 0.5 mm, and the gap 4 is 0.1 mm.
3 mm. Further, with respect to the resin layer 2 in the semiconductor device A after fabrication, the width of the wide portion 2a of the resin layer 2 is 1.2.
mm, the width of the narrow portion 2b is 0.6 mm,
Is L2 = 0.9 mm, and 1 of the wide portion 2a
L1 having a width of / 4 is L1 = 0.3 mm, and L2 =
It was 3L1. As shown in FIG. 7, on the upper surface of a substrate 16 made of alumina ceramics, which contains a semiconductor element 17 made up of a CCD, an epoxy resin made of a frame-shaped coating pattern with one gap 14 is formed. The resin layer 12 was applied. Next, the lid 15 made of glass is placed on the upper surface of the base 16, the lid 15 is pressurized from above with a load of 24,500 Pa, and ultraviolet rays having a wavelength of 365 nm are irradiated with energy of about 6 J / cm 2. Harden 12,
Five semiconductor devices B having a conventional configuration were manufactured. In order to measure the adhesive strength of the lids 5 and 15 for the semiconductor devices A and B,
With B fixed, a tensile strength test was performed in which the lids 5 and 15 were pulled upward. The evaluation results are shown in Table 1 below. [Table 1] From Table 1, it was found that the semiconductor device A of the present invention had an average tensile strength improved by 27% as compared with the conventional semiconductor device B. It is to be noted that the present invention is not limited to the above-described embodiments and examples, and that various changes may be made without departing from the spirit of the present invention. According to the present invention, there are provided a substrate having a concave portion formed on the upper surface, a semiconductor element mounted on the bottom surface of the concave portion, and a resin provided substantially all around the concave portion on the upper surface of the substrate. And a lid body that is adhered on the upper portion of the resin layer to seal the semiconductor element. The resin layer has a shape in which wide portions and narrow portions are alternately formed, and Is bonded to the outer peripheral edge and the side surface of the lower surface of the lid, thereby increasing the application area of the resin layer and being bonded to the outer peripheral edge and the side surface of the lower surface of the lid at the wide portion, so that the adhesive strength of the lid is Is greatly improved. Also, when the lid is placed on the upper surface of the base and pressed, the wide portion of the resin layer wraps around the side of the lid. However, since there are narrow portions on both adjacent sides, the wide portion of the resin layer covers the side of the lid. Is spread easily in the lateral direction, and as a result, it does not crawl up to the upper surface of the lid. Therefore, since the resin layer does not adhere to the upper surface of the lid, the upper surface of the lid can be used as a good reference plane when an optical component such as a lens is incorporated above the lid of the semiconductor device.
【図面の簡単な説明】
【図１】本発明の半導体装置について実施の形態の例を
示す平面図である。
【図２】図１の半導体装置のＡ−Ａ'線における断面図
である。
【図３】図１の半導体装置のＢ−Ｂ'線における断面図
である。
【図４】図１の半導体装置における樹脂層の部分平面図
である。
【図５】図１の半導体装置における樹脂層の塗布パター
ンの一例を示す基体上面の平面図である。
【図６】従来の半導体装置の断面図である。
【図７】図６の半導体装置における気密封止後の樹脂層
のパターンを示す基体上面の平面図である。
【符号の説明】
１：半導体パッケージ
２：樹脂層
２ａ：幅広部
２ｂ：幅狭部
３：メニスカス
４：隙間
５：蓋体
６：基体
６ａ：凹部
７：半導体素子
８：ボンディングワイヤ
BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a plan view showing an example of an embodiment of a semiconductor device of the present invention. FIG. 2 is a cross-sectional view of the semiconductor device of FIG. 1 taken along line AA ′. FIG. 3 is a cross-sectional view of the semiconductor device of FIG. 1 taken along line BB ′. FIG. 4 is a partial plan view of a resin layer in the semiconductor device of FIG. 1; FIG. 5 is a plan view of an upper surface of a substrate showing an example of a coating pattern of a resin layer in the semiconductor device of FIG. 1; FIG. 6 is a sectional view of a conventional semiconductor device. 7 is a plan view of the upper surface of a substrate showing a pattern of a resin layer after hermetic sealing in the semiconductor device of FIG. 6; [Description of Signs] 1: Semiconductor package 2: Resin layer 2a: Wide section 2b: Narrow section 3: Meniscus 4: Gap 5: Lid 6: Base 6a: Concave section 7: Semiconductor element 8: Bonding wire
Claims (1)
部の底面に載置された半導体素子と、前記基体の上面の
前記凹部の周囲の略全周に設けられた樹脂層と、該樹脂
層の上部で接着されて前記半導体素子を封止する蓋体と
を具備した半導体装置において、前記樹脂層は、幅広部
と幅狭部とが交互に形成された形状であり、かつ前記幅
広部で前記蓋体の下面の外周端および側面に接着されて
いることを特徴とする半導体装置。Claims: 1. A base having a concave portion formed on an upper surface, a semiconductor element mounted on a bottom surface of the concave portion, and provided on substantially the entire periphery of the concave portion on the upper surface of the base. A semiconductor device having a resin layer and a lid bonded to an upper portion of the resin layer to seal the semiconductor element, wherein the resin layer has a shape in which wide portions and narrow portions are alternately formed. Wherein the wide portion is adhered to an outer peripheral edge and a side surface of a lower surface of the lid.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001338343A JP2003142621A (en) | 2001-11-02 | 2001-11-02 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001338343A JP2003142621A (en) | 2001-11-02 | 2001-11-02 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2003142621A true JP2003142621A (en) | 2003-05-16 |
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| Application Number | Title | Priority Date | Filing Date |
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| JP2001338343A Pending JP2003142621A (en) | 2001-11-02 | 2001-11-02 | Semiconductor device |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008140033A1 (en) * | 2007-05-11 | 2008-11-20 | Tanaka Kikinzoku Kogyo K.K. | Lid or case for sealing package and method for manufacturing the lid or the case |
| JP2009295885A (en) * | 2008-06-06 | 2009-12-17 | Sharp Corp | Semiconductor device, module for optical device, and method for manufacturing of semiconductor device |
| EP3754699A4 (en) * | 2018-02-13 | 2021-01-13 | Tanaka Kikinzoku Kogyo K.K. | Sealing lid formed from translucent material |
-
2001
- 2001-11-02 JP JP2001338343A patent/JP2003142621A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008140033A1 (en) * | 2007-05-11 | 2008-11-20 | Tanaka Kikinzoku Kogyo K.K. | Lid or case for sealing package and method for manufacturing the lid or the case |
| JPWO2008140033A1 (en) * | 2007-05-11 | 2010-08-05 | Ｔａｎａｋａホールディングス株式会社 | Lid or case for sealed package and manufacturing method thereof |
| JP2009295885A (en) * | 2008-06-06 | 2009-12-17 | Sharp Corp | Semiconductor device, module for optical device, and method for manufacturing of semiconductor device |
| EP3754699A4 (en) * | 2018-02-13 | 2021-01-13 | Tanaka Kikinzoku Kogyo K.K. | Sealing lid formed from translucent material |
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