JP2004091821A5 - - Google Patents

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Publication number
JP2004091821A5
JP2004091821A5 JP2002251965A JP2002251965A JP2004091821A5 JP 2004091821 A5 JP2004091821 A5 JP 2004091821A5 JP 2002251965 A JP2002251965 A JP 2002251965A JP 2002251965 A JP2002251965 A JP 2002251965A JP 2004091821 A5 JP2004091821 A5 JP 2004091821A5
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JP
Japan
Prior art keywords
thin film
reaction chamber
heating element
introduction part
gas introduction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002251965A
Other languages
English (en)
Japanese (ja)
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JP2004091821A (ja
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Publication date
Application filed filed Critical
Priority to JP2002251965A priority Critical patent/JP2004091821A/ja
Priority claimed from JP2002251965A external-priority patent/JP2004091821A/ja
Publication of JP2004091821A publication Critical patent/JP2004091821A/ja
Publication of JP2004091821A5 publication Critical patent/JP2004091821A5/ja
Pending legal-status Critical Current

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JP2002251965A 2002-08-29 2002-08-29 薄膜デバイス用製造装置および薄膜デバイスの製造方法 Pending JP2004091821A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002251965A JP2004091821A (ja) 2002-08-29 2002-08-29 薄膜デバイス用製造装置および薄膜デバイスの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002251965A JP2004091821A (ja) 2002-08-29 2002-08-29 薄膜デバイス用製造装置および薄膜デバイスの製造方法

Publications (2)

Publication Number Publication Date
JP2004091821A JP2004091821A (ja) 2004-03-25
JP2004091821A5 true JP2004091821A5 (enExample) 2005-09-02

Family

ID=32058403

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002251965A Pending JP2004091821A (ja) 2002-08-29 2002-08-29 薄膜デバイス用製造装置および薄膜デバイスの製造方法

Country Status (1)

Country Link
JP (1) JP2004091821A (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5016810B2 (ja) * 2005-11-30 2012-09-05 株式会社アルバック 触媒線化学気相成長装置、この装置を用いた化学気相成長方法及びこの装置のセルフクリーニング方法
JP2008303078A (ja) * 2007-06-05 2008-12-18 Japan Atomic Energy Agency シリコン薄膜または同位体濃縮シリコン薄膜の製造方法
US8117987B2 (en) * 2009-09-18 2012-02-21 Applied Materials, Inc. Hot wire chemical vapor deposition (CVD) inline coating tool
DE102011018324A1 (de) * 2011-04-20 2012-10-25 Forschungszentrum Jülich GmbH Heißdrahtverfahren zur Abscheidung von Halbleiter-Material auf einem Substrat und Vorrichtung zur Durchführung des Verfahrens
US9401450B2 (en) * 2013-12-09 2016-07-26 Sunpower Corporation Solar cell emitter region fabrication using ion implantation
KR20170077188A (ko) * 2015-02-12 2017-07-05 신닛테츠스미킨 카부시키카이샤 탄화규소의 에피택셜 성장 방법
CN110331378B (zh) * 2019-07-18 2024-01-19 中国科学院金属研究所 金刚石薄膜连续制备使用的hfcvd设备及其镀膜方法

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