JP2004091821A5 - - Google Patents
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- JP2004091821A5 JP2004091821A5 JP2002251965A JP2002251965A JP2004091821A5 JP 2004091821 A5 JP2004091821 A5 JP 2004091821A5 JP 2002251965 A JP2002251965 A JP 2002251965A JP 2002251965 A JP2002251965 A JP 2002251965A JP 2004091821 A5 JP2004091821 A5 JP 2004091821A5
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- JP
- Japan
- Prior art keywords
- thin film
- reaction chamber
- heating element
- introduction part
- gas introduction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Claims (3)
- ガス導入部と、このガス導入部より噴き出したガスが通過する発熱体とを備え、被成膜用基体上にホットワイヤーＣＶＤ法により第１薄膜を被着せしめるための第１反応室と、
ガス導入部と、このガス導入部より噴き出したガスが通過する発熱体とを備え、前記第１薄膜上にホットワイヤーＣＶＤ法により第２薄膜を被着せしめるための第２反応室と、
前記第１薄膜を被着した被成膜用基体を前記第１反応室から前記第２反応室へ搬送する搬送手段と、を備えた薄膜デバイス用製造装置。 - 前記第１反応室内の発熱体の成分と、前記第２反応室内の発熱体の成分とを、双方間にて違えたことを特徴とする請求項１に記載の薄膜デバイス用製造装置。
- 請求項１または請求項２に記載の薄膜デバイス用製造装置を用いて被成膜用基体上に第１薄膜と第２薄膜とを被着することを特徴とする薄膜デバイスの製造方法。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002251965A JP2004091821A (ja) | 2002-08-29 | 2002-08-29 | 薄膜デバイス用製造装置および薄膜デバイスの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002251965A JP2004091821A (ja) | 2002-08-29 | 2002-08-29 | 薄膜デバイス用製造装置および薄膜デバイスの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2004091821A JP2004091821A (ja) | 2004-03-25 |
| JP2004091821A5 true JP2004091821A5 (ja) | 2005-09-02 |
Family
ID=32058403
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002251965A Pending JP2004091821A (ja) | 2002-08-29 | 2002-08-29 | 薄膜デバイス用製造装置および薄膜デバイスの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2004091821A (ja) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5016810B2 (ja) * | 2005-11-30 | 2012-09-05 | 株式会社アルバック | 触媒線化学気相成長装置、この装置を用いた化学気相成長方法及びこの装置のセルフクリーニング方法 |
| JP2008303078A (ja) * | 2007-06-05 | 2008-12-18 | Japan Atomic Energy Agency | シリコン薄膜または同位体濃縮シリコン薄膜の製造方法 |
| US8117987B2 (en) * | 2009-09-18 | 2012-02-21 | Applied Materials, Inc. | Hot wire chemical vapor deposition (CVD) inline coating tool |
| DE102011018324A1 (de) * | 2011-04-20 | 2012-10-25 | Forschungszentrum Jülich GmbH | Heißdrahtverfahren zur Abscheidung von Halbleiter-Material auf einem Substrat und Vorrichtung zur Durchführung des Verfahrens |
| US9401450B2 (en) * | 2013-12-09 | 2016-07-26 | Sunpower Corporation | Solar cell emitter region fabrication using ion implantation |
| KR20170077188A (ko) * | 2015-02-12 | 2017-07-05 | 신닛테츠스미킨 카부시키카이샤 | 탄화규소의 에피택셜 성장 방법 |
| CN110331378B (zh) * | 2019-07-18 | 2024-01-19 | 中国科学院金属研究所 | 金刚石薄膜连续制备使用的hfcvd设备及其镀膜方法 |
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2002
- 2002-08-29 JP JP2002251965A patent/JP2004091821A/ja active Pending
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