JP2004090637A - Manufacturing method for silicon device, manufacturing method for liquid jet head, and liquid jet head - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for making a silicon device and a method for making a liquid jet head unerringly preventing a breakage of a piezoelectric device during manufacturing. <P>SOLUTION: The silicon device is manufactured by forming a first steam permeation prevention pattern 130 by forming a first moisture permeation prevention layer 96 that is the same layer as a first conducting layer 96 and continuous as if to surround the entire thin film pattern of the silicon wafer 100 on a silicon wafer 100, forming a second moisture permeation prevention layer 114 that is the same layer as an insulating layer 110 and narrower than the first moisture permeation prevention layer 96 on the first moisture permeation prevention layer 96 and forming a third moisture permeation prevention layer 121 that is the same layer as a second conducting layer 120 and as if to cover the second moisture permeation prevention layer 114 on the second moisture permeation prevention layer 114, and subsequently, joining a sealing substrate to the silicon wafer 100 through the moisture permeation prevention pattern 130 and a recess by etching from the other side of the silicon wafer 100 when the thin film pattern is formed on one side of the silicon wafer 100. <P>COPYRIGHT: (C)2004,JPO

Description

The present invention relates to a method for manufacturing a silicon device having a thin film pattern on a silicon substrate, and in particular, a part of a pressure generating chamber communicating with a nozzle opening for discharging ink droplets is constituted by a diaphragm, and the surface of the diaphragm is The present invention is suitable for a liquid ejecting head that forms a piezoelectric element and ejects ink droplets by displacement of a piezoelectric layer, and a method for manufacturing the same.

As the liquid ejecting apparatus, for example, a plurality of pressure generating chambers that generate pressure for ejecting ink droplets by a piezoelectric element or a heating element, a common reservoir that supplies ink to each pressure generating chamber, and a plurality of pressure generating chambers. There is an ink jet recording apparatus including an ink jet recording head having a nozzle opening communicating therewith. In this ink jet recording apparatus, ejection energy is applied to ink in a pressure generating chamber communicating with a nozzle corresponding to a print signal. Ink droplets are ejected from the nozzle openings.

A part of the pressure generating chamber communicating with the nozzle opening for discharging the ink droplet is constituted by a vibrating plate, and the vibrating plate is deformed by a piezoelectric element to pressurize the ink in the pressure generating chamber to discharge the ink droplet from the nozzle opening. Two types of ink jet recording heads have been put into practical use, one using a longitudinal vibration mode piezoelectric actuator that expands and contracts in the axial direction of a piezoelectric element, and the other using a flexural vibration mode piezoelectric actuator.

In the former, the volume of the pressure generating chamber can be changed by bringing the end face of the piezoelectric element into contact with the vibration plate, and a head suitable for high-density printing can be manufactured. There is a problem in that a difficult process of cutting the piezoelectric element into a comb shape in accordance with the pitch and an operation of positioning and fixing the cut piezoelectric element in the pressure generating chamber are required, and the manufacturing process is complicated.

On the other hand, in the latter, a piezoelectric element can be formed on a diaphragm by a relatively simple process of sticking a green sheet of a piezoelectric material in accordance with the shape of the pressure generating chamber and firing the green sheet. However, there is a problem that a certain amount of area is required due to the use of, and that high-density arrangement is difficult.

On the other hand, in order to eliminate the latter disadvantage of the recording head, a uniform piezoelectric material layer is formed by a film forming technique over the entire surface of the diaphragm, and the piezoelectric material layer is formed by lithography to have a shape corresponding to the pressure generating chamber. There has been proposed a device in which a piezoelectric element is formed so as to be independent for each pressure generating chamber (for example, see Patent Document 1).

According to this, the work of attaching the piezoelectric element to the diaphragm is not required, and not only can the piezoelectric element be formed at a high density by a precise and simple method called lithography, but also the thickness of the piezoelectric element can be reduced. There is an advantage that it can be made thin and can be driven at high speed.

As a method of manufacturing such an ink jet recording head, first, a vibration plate and a piezoelectric element are formed on one surface of a silicon wafer serving as a flow path forming substrate, and then the movement of the piezoelectric element is inhibited on the piezoelectric element side of the silicon wafer. A sealing substrate provided with a piezoelectric element holding portion having a space not to be bonded is joined. Thereafter, the pressure generating chamber is formed by etching the silicon wafer from the other surface side, and then the silicon wafer is divided into a plurality of pieces (see, for example, Patent Document 2).

However, when the sealing substrate is bonded to the silicon wafer, the height of the thin film pattern formed on the silicon wafer in contact with the sealing substrate is not uniform due to the lamination state of the thin film patterns. A region to be formed occurs.

(4) As a result, there is a problem that an etching solution such as an alkaline solution used when etching a silicon wafer intrudes into the piezoelectric element holding portion via an adhesive, and the piezoelectric element is destroyed.

Further, there is also an ink jet recording head having a structure in which an insulating layer and a wiring connection layer are sequentially laminated on an electrode of a piezoelectric element or a lead electrode together with a piezoelectric element on a silicon wafer to prevent a voltage drop of a common electrode of each piezoelectric element. However, in such a structure, the thickness of the adhesive in a region where the silicon wafer and the sealing substrate are joined to each other increases, and in particular, an etching solution enters the piezoelectric element holding portion via the adhesive. There is a problem of doing.

Further, such a problem exists not only in a method of manufacturing an ink jet recording head that discharges ink, but also in a method of manufacturing a silicon device such as another liquid jet head that discharges liquid other than ink. I do.

JP-A-5-286131 (FIG. 3, paragraph [0013]) JP-A-2002-036547 (FIGS. 3-4, pages 6-7)

In view of such circumstances, an object of the present invention is to provide a method for manufacturing a silicon device, a method for manufacturing a liquid ejecting head, and a liquid ejecting head, which can surely prevent the destruction of a thin film pattern during manufacturing.

A first aspect of the present invention that solves the above problem has a thin film pattern formed by sequentially stacking at least a first conductive layer, an insulating layer, and a second conductive layer, and has a recess on the opposite side of the thin film pattern. In a method of manufacturing a silicon device in which a sealing substrate having a thin film pattern holding portion that defines a space for sealing the thin film pattern is bonded on a silicon substrate, the method includes forming the thin film pattern on one surface of a silicon wafer. Forming a continuous first moisture permeation prevention layer on the silicon wafer so as to surround the entire thin film pattern of the silicon wafer in the same layer as the first conductive layer, and forming the insulating film on the first moisture permeation prevention layer; Forming a second moisture barrier layer that is the same layer as the first layer and is narrower than the first moisture barrier layer, and is formed on the second moisture barrier layer in the same layer as the second conductive layer and the second moisture barrier layer. Covers moisture barrier The third moisture-permeable layer is formed as described above to form the moisture-permeable pattern, and then the sealing substrate is bonded onto the silicon wafer via the moisture-permeable pattern, and the other part of the silicon wafer is bonded. Forming the concave portion by etching from a direction.
In the first aspect, since the silicon wafer and the sealing substrate are joined via the moisture permeation prevention pattern, the adhesive on the moisture permeation prevention pattern is made relatively thin, and an etching solution for etching the silicon wafer is used. Can be prevented from entering the thin film pattern holding portion via the adhesive. In addition, since the second moisture barrier layer constituting the moisture barrier pattern is covered with the first moisture barrier layer and the third moisture barrier layer, the second moisture barrier layer is not dissolved by the etchant. In addition, it is possible to prevent the etchant from entering the thin film pattern holding portion via the second moisture permeation preventing layer, and it is possible to surely prevent the piezoelectric element from being broken. Furthermore, since the silicon wafer and the sealing substrate are joined via the moisture permeation preventing pattern, an adhesive having a desired thickness can be formed between the silicon wafer and the sealing substrate. Bonding with the substrate can be reliably performed.

A second aspect of the present invention is the method of manufacturing a silicon device according to the first aspect, wherein the moisture permeation preventing pattern is formed continuously along a peripheral portion of the silicon wafer.
In the second aspect, the thin film pattern can be prevented from being destroyed by the etchant by the moisture permeation preventing pattern formed continuously along the peripheral portion.

A third aspect of the present invention is the method for manufacturing a silicon device according to the first or second aspect, wherein the concave portion is formed by wet-etching the silicon wafer.
In the third aspect, the silicon wafer can be patterned with high accuracy by performing wet etching.

A fourth aspect of the present invention is the method for manufacturing a silicon device according to any one of the first to third aspects, wherein the second moisture permeation preventing layer is made of a photosensitive resin.
In the fourth aspect, the second moisture permeation preventing layer made of an insulating layer can be formed relatively easily and with high precision.

A fifth aspect of the present invention is the method for manufacturing a silicon device according to the fourth aspect, wherein the photosensitive resin is polyimide.
In the fifth aspect, by using a predetermined photosensitive resin, an insulating layer having high insulating properties can be formed relatively easily and with high accuracy.

According to a sixth aspect of the present invention, in any one of the first to third aspects, the second moisture permeation preventing layer comprises a fluororesin, a silicone resin, an epoxy resin, silicon oxide, silicon nitride, or tantalum oxide. A feature is a method for manufacturing a silicon device.
In the sixth aspect, by using a predetermined material, an insulating layer having high insulating properties can be formed relatively easily and with high accuracy.

According to a seventh aspect of the present invention, there is provided a flow path forming substrate in which a pressure generating chamber communicating with a nozzle opening is defined, and a pressure is applied to the pressure generating chamber by being provided on the flow path forming substrate via a diaphragm. A piezoelectric element to be applied, an extraction electrode extracted from an individual electrode of the piezoelectric element, and at least one of the extraction wirings in a region facing the vicinity of at least a longitudinal end of the piezoelectric element along a direction in which the piezoelectric elements are arranged. An insulating layer that is continuously provided so as to cover a part thereof and has a penetrating portion in a region facing a common electrode common to a plurality of piezoelectric elements, and continuously on the insulating layer in a direction in which the piezoelectric elements are juxtaposed. A connection wiring layer that is provided and is electrically connected to the common electrode through the through portion; and a bonding wire layer that is joined to a surface of the flow path forming substrate on the piezoelectric element side and does not hinder the movement of the piezoelectric element. Piezoelectric element to secure space A method of manufacturing a liquid ejecting head including a sealing substrate having a holding portion, a step of forming the vibration plate and the piezoelectric element on a silicon wafer, and a sealing substrate serving as the sealing substrate on the silicon wafer The extraction electrode is formed in a joining region where the forming material is joined, and a first moisture-proof layer formed on the silicon wafer in the same layer as the extraction electrode and electrically independent of the extraction electrode. The insulating layer is formed continuously so as to surround the entire piezoelectric element, the insulating layer is formed, and the second moisture preventing layer of the same layer as the insulating layer is formed on the first moisture preventing layer. The third wiring layer is formed to be narrower than the second wiring layer, and the third wiring layer is formed in the same layer as the connecting wiring layer and electrically independent of the connecting wiring layer. Above the second moisture barrier Forming a moisture-permeable pattern comprising the first moisture-permeable layer, the second moisture-permeable layer, and the third moisture-permeable layer; and forming the moisture-permeable pattern on the silicon wafer. Bonding the sealing substrate forming material via a prevention pattern, forming the pressure generating chamber by etching the silicon wafer, and setting the silicon wafer and the sealing substrate forming material to a predetermined size. And a method of manufacturing the liquid jet head.
In the seventh aspect, since the silicon wafer and the sealing substrate forming material are joined via the moisture permeation prevention pattern, the adhesive on the moisture permeation prevention pattern is made relatively thin, and the silicon wafer is etched. It is possible to prevent the etchant from entering the piezoelectric element holding portion via the adhesive. In addition, since the second moisture barrier layer constituting the moisture barrier pattern is covered with the first moisture barrier layer and the third moisture barrier layer, the second moisture barrier layer is not dissolved by the etchant. In addition, it is possible to prevent the etchant from entering the piezoelectric element holding portion via the second moisture permeation preventing layer, and to surely prevent the piezoelectric element from being broken. Further, since the silicon wafer and the sealing substrate forming material are joined via the moisture permeation preventing pattern, an adhesive having a desired thickness can be formed between the flow path forming substrate and the sealing substrate. The connection between the path forming substrate and the sealing substrate can be reliably performed.

An eighth aspect of the present invention is the method for manufacturing a liquid jet head according to the seventh aspect, wherein the moisture permeation preventing pattern is formed continuously along a peripheral portion of the silicon wafer.
According to the eighth aspect, the breakage of the piezoelectric element due to the etchant can be prevented by the moisture permeation preventing pattern formed continuously along the peripheral portion.

According to a ninth aspect of the present invention, in the manufacturing method of the liquid ejecting head according to the seventh or eighth aspect, the moisture permeation preventing pattern is formed continuously along an outer periphery of a region where the silicon wafer is divided. In the way.
In the ninth aspect, the breakage of the piezoelectric element due to the etchant can be prevented by the moisture permeation preventing pattern formed continuously along the outer periphery of the divided region.

A tenth aspect of the present invention is the liquid jet head according to any one of the seventh to ninth aspects, wherein the moisture permeation preventing pattern includes an individual moisture permeation preventing pattern surrounding each of the piezoelectric element holding portions. Manufacturing method.
In the tenth aspect, by providing the individual moisture permeation prevention patterns, it is possible to prevent moisture from permeating into the piezoelectric element holding portion from the outside via an adhesive when divided into liquid jet heads. In addition, destruction of the piezoelectric element due to the external environment can be reliably prevented.

An eleventh aspect of the present invention is the method for manufacturing a liquid jet head according to any one of the seventh to tenth aspects, wherein the pressure generating chamber is formed by wet-etching the silicon wafer. .
In the eleventh aspect, the pressure generation chamber can be formed in the silicon wafer with high density and high precision by performing wet etching.

A twelfth aspect of the present invention is the method for manufacturing a liquid jet head according to any one of the seventh to eleventh aspects, wherein the insulating layer is made of a photosensitive resin.
In the twelfth aspect, the second moisture barrier layer made of an insulating layer can be formed relatively easily and with high precision.

A thirteenth aspect of the present invention is the method for manufacturing a liquid jet head according to the twelfth aspect, wherein the photosensitive resin is polyimide.
In the thirteenth aspect, by using a predetermined photosensitive resin, an insulating layer having high insulating properties can be formed relatively easily and with high accuracy.

A fourteenth aspect of the present invention is the liquid according to any one of the seventh to eleventh aspects, wherein the insulating layer is made of a fluorine resin, a silicone resin, an epoxy resin, silicon oxide, silicon nitride, or tantalum oxide. The manufacturing method of the ejection head.
In the fourteenth aspect, by using a predetermined material, an insulating layer having high insulating properties can be formed relatively easily and with high accuracy.

According to a fifteenth aspect of the present invention, there is provided a flow channel forming substrate in which a pressure generating chamber communicating with a nozzle opening is defined, and a pressure generating chamber provided on the flow channel forming substrate via a diaphragm to apply pressure to the pressure generating chamber. A piezoelectric element to be applied, an extraction electrode extracted from an individual electrode of the piezoelectric element, and at least one of the extraction wirings in a region facing the vicinity of at least a longitudinal end of the piezoelectric element along a direction in which the piezoelectric elements are arranged. An insulating layer that is continuously provided so as to cover a part thereof and has a penetrating portion in a region facing a common electrode common to a plurality of piezoelectric elements, and continuously on the insulating layer in a direction in which the piezoelectric elements are juxtaposed. A connection wiring layer that is provided and is electrically connected to the common electrode through the through portion; and a bonding wire layer that is joined to a surface of the flow path forming substrate on the piezoelectric element side and does not hinder the movement of the piezoelectric element. Piezoelectric to secure space A liquid-jet head including a sealing substrate having a child holding portion, in a bonding region where a sealing substrate forming material serving as the sealing substrate is bonded on a silicon wafer on which the vibration plate and the piezoelectric element are formed. A first moisture permeation preventing layer, which is formed in the same layer as the extraction electrode and is electrically independent of the extraction electrode and is continuously formed so as to surround the entire piezoelectric element; A second moisture barrier layer formed on the first moisture barrier layer to be narrower than the first moisture barrier layer; and a second moisture barrier layer formed of the same layer as the connection wiring layer. The silicon wafer and the sealing layer through a moisture-permeable pattern formed of a third moisture-permeable layer formed on the layer so as to cover the second moisture-permeable layer and electrically independent of the connection wiring layer. After bonding with the substrate forming material, the silicon wafer is etched. A liquid-jet head, characterized in that by packaging is obtained by dividing what the pressure generating chamber is formed in a predetermined size.
In the fifteenth aspect, since the silicon wafer and the sealing substrate forming material are joined via the moisture permeation prevention pattern, the adhesive on the moisture permeation prevention pattern is made relatively thin, and the silicon wafer is etched. Can be prevented from entering the piezoelectric element holding portion via the adhesive. In addition, since the second moisture barrier layer constituting the moisture barrier pattern is covered with the first moisture barrier layer and the third moisture barrier layer, the second moisture barrier layer is not dissolved by the etchant. In addition, it is possible to prevent the etchant from entering the piezoelectric element holding portion via the second moisture permeation preventing layer, and to surely prevent the piezoelectric element from being broken. Further, since the silicon wafer and the sealing substrate forming material are joined via the moisture permeation preventing pattern, an adhesive having a desired thickness can be formed between the flow path forming substrate and the sealing substrate. It is possible to provide a liquid jet head in which the path forming substrate and the sealing substrate are securely joined.

According to a sixteenth aspect of the present invention, in the fifteenth aspect, a part of the moisture permeation preventing pattern is present in at least a part of a joining region between the flow path forming substrate and the sealing substrate. Liquid ejecting head.
In the sixteenth aspect, the moisture permeation preventing pattern may be formed in the joint region between the flow path forming substrate and the sealing substrate, so that the formation of the moisture permeation preventing pattern can be facilitated and the silicon wafer can be divided. Can be easily performed.

According to a seventeenth aspect of the present invention, there is provided a flow path forming substrate in which a pressure generating chamber communicating with a nozzle opening is defined, and a pressure generating chamber provided on the flow path forming substrate via a diaphragm to apply pressure to the pressure generating chamber. A piezoelectric element to be applied, an extraction electrode extracted from an individual electrode of the piezoelectric element, and at least one of the extraction wirings in a region facing the vicinity of at least a longitudinal end of the piezoelectric element along a direction in which the piezoelectric elements are arranged. An insulating layer that is continuously provided so as to cover a part thereof and has a penetrating portion in a region facing a common electrode common to a plurality of piezoelectric elements, and continuously on the insulating layer in a direction in which the piezoelectric elements are juxtaposed. A connection wiring layer that is provided and is electrically connected to the common electrode through the through portion; and a bonding wire layer that is joined to a surface of the flow path forming substrate on the piezoelectric element side and does not hinder the movement of the piezoelectric element. Piezoelectric to secure space A liquid ejecting head including a sealing substrate having a child holding portion, wherein at least a part of a bonding region between the flow path forming substrate and the sealing substrate is formed in the same layer as the extraction electrode and the extraction electrode. A first conductive layer formed electrically independently, an interlayer insulating layer formed on the first conductive layer in the same layer as the insulating layer, and formed narrower than the first conductive layer; A second conductive layer formed on the interlayer insulating layer so as to cover the interlayer insulating layer in the same layer as the connecting wiring layer and comprising a second conductive layer electrically independent of the connecting wiring layer; The liquid jet head is characterized in that:
In the seventeenth aspect, by providing a laminated pattern between the flow path forming substrate and the sealing substrate, it is possible to prevent moisture from permeating into the piezoelectric element holding portion from outside via an adhesive. Destruction caused by the external environment can be reliably prevented.

According to an eighteenth aspect of the present invention, in the seventeenth aspect, the laminated pattern is provided continuously so as to surround the entire piezoelectric element in a silicon wafer state divided into the flow path forming substrates, The liquid jet head is a moisture permeation preventing pattern formed in a bonding region between a silicon wafer and a sealing substrate forming layer that is to be the sealing substrate by being divided.
In the eighteenth aspect, since the silicon wafer and the sealing substrate forming material are joined via the moisture permeation preventing pattern during manufacturing, the adhesive on the moisture permeation preventing pattern is made relatively thin, and the silicon wafer is etched. It is possible to prevent the etching liquid from having entered the piezoelectric element holding portion via the adhesive. Further, since the silicon wafer and the sealing substrate forming material are joined via the moisture permeation preventing pattern, an adhesive having a desired thickness can be formed between the flow path forming substrate and the sealing substrate. It is possible to provide a liquid jet head in which the path forming substrate and the sealing substrate are securely joined.

A nineteenth aspect of the present invention is the liquid according to the seventeenth or eighteenth aspect, wherein the laminated pattern includes an individual moisture permeation preventing pattern continuously provided so as to surround the piezoelectric element holding portion. In the ejection head.
In the nineteenth aspect, since the individual moisture permeation preventing patterns are provided between the flow path forming substrate and the sealing substrate, it is possible to prevent moisture from permeating the inside of the piezoelectric element holding portion from outside via an adhesive, Destruction due to the external environment of the piezoelectric element can be reliably prevented.

Hereinafter, the present invention will be described in detail based on embodiments.
(Embodiment 1)
FIG. 1 is an exploded perspective view showing an ink jet recording head according to Embodiment 1 of the present invention, FIG. 2 is a cross-sectional view of FIG. 1, and FIG. FIG. 3 is a plan view showing a wiring structure.

As shown in the drawing, the flow path forming substrate 10 is formed of a silicon single crystal substrate having a plane orientation (110) in the present embodiment, and has a plurality of pressure generating chambers 12 formed by anisotropic etching on one surface thereof. Are arranged side by side in the width direction. On the outside in the longitudinal direction of the pressure generating chambers 12, there is provided a communication part 13 which communicates with a reservoir part 31 of the sealing substrate 30 described later and constitutes a part of a reservoir serving as a common ink chamber of each pressure generating chamber 12. It is formed and communicates with one end in the longitudinal direction of each pressure generating chamber 12 via an ink supply path 14.
One surface of the flow path forming substrate 10 is an opening surface, and the other surface is formed with an elastic film 50 made of silicon dioxide formed in advance by thermal oxidation and having a thickness of 1 to 2 μm.

異 方 性 Here, the anisotropic etching is performed by utilizing the difference in the etching rate of the silicon single crystal substrate. For example, in the present embodiment, when a silicon single crystal substrate is immersed in an alkaline solution such as KOH, it is gradually eroded, and the first (111) plane perpendicular to the (110) plane and the first (111) plane And a second (111) plane that forms an angle of about 70 degrees with the (110) plane and forms an angle of about 35 degrees with the (110) plane, and the etching rate of the (111) plane is compared with the etching rate of the (110) plane. The etching is performed using the property that the etching rate is about 1/180. By such anisotropic etching, precision processing can be performed based on depth processing of a parallelogram formed by two first (111) surfaces and two oblique second (111) surfaces. , The pressure generating chambers 12 can be arranged at a high density.

In the present embodiment, the long side of each pressure generating chamber 12 is formed by the first (111) plane, and the short side is formed by the second (111) plane. The pressure generating chamber 12 is formed by etching until it reaches the elastic film 50 substantially through the flow path forming substrate 10. Here, the amount of the elastic film 50 that is attacked by the alkaline solution for etching the silicon single crystal substrate is extremely small. Each of the ink supply passages 14 communicating with one end of each of the pressure generating chambers 12 is formed shallower than the pressure generating chambers 12 and maintains a constant flow resistance of the ink flowing into the pressure generating chambers 12. That is, the ink supply path 14 is formed by partially etching (half-etching) the silicon single crystal substrate in the thickness direction. Note that the half etching is performed by adjusting the etching time.

Note that it is preferable that the thickness of the flow path forming substrate 10 in which the pressure generating chambers 12 and the like are formed be selected in accordance with the density at which the pressure generating chambers 12 are provided. For example, when the pressure generating chambers 12 are arranged at approximately 180 (180 dpi) per inch, the thickness of the flow path forming substrate 10 is preferably approximately 180 to 280 μm, more preferably approximately 220 μm. is there. When the pressure generating chambers 12 are arranged at a relatively high density of, for example, about 360 dpi, the thickness of the flow path forming substrate 10 is preferably set to 100 μm or less. This is because the arrangement density can be increased while maintaining the rigidity of the partition 11 between the adjacent pressure generating chambers 12.

As shown in FIG. 4, a plurality of such flow path forming substrates 10 are integrally formed on a silicon wafer 100 made of a silicon single crystal substrate. As will be described in detail later, after bonding the sealing substrate 30 and the like to the silicon wafer 100, the pressure generation chambers 12 and the like are formed in the silicon wafer 100, and the silicon wafer 100 is divided into a plurality of flow path forming substrates. It becomes 10.

A nozzle plate 20 having a nozzle opening 21 communicating with the pressure generating chamber 12 on the side opposite to the ink supply path 14 is provided on the opening surface side of the flow path forming substrate 10 with an adhesive, a heat welding film, or the like. Is fixed through. The nozzle plate 20 has a thickness of, for example, 0.1 to 1 mm and a linear expansion coefficient of 300 ° C. or less, for example, a glass ceramic having a thickness of 2.5 to 4.5 [× 10 ⁻⁶ / ° C.], or Made of non-rusting steel. One surface of the nozzle plate 20 entirely covers one surface of the flow path forming substrate 10 and also serves as a reinforcing plate for protecting the silicon single crystal substrate from impact and external force. Further, the nozzle plate 20 may be formed of a material having substantially the same thermal expansion coefficient as the flow path forming substrate 10. In this case, since the deformation of the flow path forming substrate 10 and the nozzle plate 20 due to heat become substantially the same, it is possible to easily join them using a thermosetting adhesive or the like.
Here, the size of the pressure generating chamber 12 that applies the ink droplet ejection pressure to the ink and the size of the nozzle opening 21 that ejects the ink droplet are optimized according to the amount of the ejected ink droplet, the ejection speed, and the ejection frequency. You. For example, when recording 360 ink droplets per inch, the nozzle openings 21 need to be formed with a diameter of several tens of μm with high accuracy.

On the other hand, a lower electrode film 60 having a thickness of, for example, about 0.2 μm and a piezoelectric layer having a thickness of, for example, about 1 μm are formed on the elastic film 50 on the side opposite to the opening surface of the flow path forming substrate 10. 70 and an upper electrode film 80 having a thickness of, for example, about 0.1 μm are laminated to form a piezoelectric element 300 by a process described later. Here, the piezoelectric element 300 refers to a portion including the lower electrode film 60, the piezoelectric layer 70, and the upper electrode film 80. Generally, one of the electrodes of the piezoelectric element 300 is used as a common electrode, and the other electrode and the piezoelectric layer 70 are patterned for each of the pressure generating chambers 12. Here, a portion which is constituted by one of the patterned electrodes and the piezoelectric layer 70 and in which a piezoelectric strain is generated by applying a voltage to both electrodes is referred to as a piezoelectric active portion. In the present embodiment, the lower electrode film 60 is used as a common electrode of the piezoelectric element 300, and the upper electrode film 80 is used as an individual electrode of the piezoelectric element 300. In any case, the piezoelectric active portion is formed for each pressure generating chamber. Further, here, the piezoelectric element 300 and a vibration plate whose displacement is generated by driving the piezoelectric element 300 are collectively referred to as a piezoelectric actuator.

Further, a lead electrode 90 made of, for example, gold (Au) is connected to the upper electrode film 80 of each piezoelectric element 300. The extraction electrode 90 is extracted from the vicinity of the longitudinal end of each piezoelectric element 300, and extends to the elastic film 50 in a region corresponding to the ink supply path 14.
Further, the lower electrode film 60, which is a common electrode of the piezoelectric element 300, extends continuously in the direction in which the pressure generating chambers 12 are arranged, and is patterned on the ink supply path 14 side of the pressure generating chambers 12. . That is, in the present embodiment, the lower electrode film 60 is removed from only the region of the flow path forming substrate 10 where the extraction electrode 90 extends, and is provided over the entire other region.
Further, in the present embodiment, on the lower electrode film 60 in a region corresponding to the outside of the row of the pressure generating chambers 12, a laminated electrode layer formed of the same layer as the extraction electrode 90 and electrically independent of the extraction electrode 90. 95 are provided.

The region facing the longitudinal end of the piezoelectric element 300 has an insulating layer 110 made of an insulating material and extending along the direction in which the piezoelectric elements 300 are arranged. For example, in the present embodiment, the insulating layer 110 is provided continuously around the row of the pressure generating chambers 12, and a region corresponding to the row of the pressure generating chambers 12 is an opening 111.
Further, a connection wiring layer 120 made of a conductive material is continuously provided on the insulating layer 110. The connection wiring layer 120 and the lower electrode film 60 are formed by a plurality of through-holes provided in the insulating layer 110. They are electrically connected via the unit 112.

Here, it is preferable that the penetrating portions 112 provided in the insulating layer 110 are arranged at relatively equal intervals. For example, in the present embodiment, the penetrating portions 112 extend near the ends of the piezoelectric elements 300 on the extraction electrode 90 side. A through portion 112 is provided in a region of the insulating layer 110 facing each partition 11. The size of the penetrating portion 112 is not particularly limited, but is preferably 20 μm or less.
In the present embodiment, the penetrating portion 113 is also provided in a region facing the outside of the row of the pressure generating chambers 12, that is, a region facing the stacked electrode layer 95 provided on the lower electrode film 60. The stacked electrode layer 95 (the lower electrode film 60) and the connection wiring layer 120 are also electrically connected via the through portion 113.

(4) As described above, by electrically connecting the connection wiring layer 120 to the lower electrode film 60 that is a common electrode of the piezoelectric element 300, the resistance value of the lower electrode film 60 is substantially reduced. Similarly, by providing the laminated electrode layer 95 on the lower electrode film 60, the resistance value of the lower electrode film 60 is substantially reduced. Therefore, even if a large number of piezoelectric elements are driven at the same time, no voltage drop occurs, and good and stable ink ejection characteristics can always be obtained.

Further, since the connection wiring layer 120 is provided in a region facing the end of the piezoelectric element 300 via the insulating layer 110, there is no need to secure a space for providing the connection wiring layer 120. Therefore, the ink ejection characteristics can be stabilized without increasing the size of the head.
Further, since the connection wiring layer 120 and the lower electrode film 60 are electrically connected via the plurality of penetrating portions 112 and 113 of the insulating layer 110, the resistance value at each portion of the lower electrode film 60 is substantially reduced. As a result, the displacement of the diaphragm caused by driving each piezoelectric element 300 becomes stable. Thereby, the ejection characteristics of the ink ejected from each nozzle opening can be made uniform.

Further, in the present embodiment, since the insulating layer 110 and the connection wiring layer 120 are provided outside the region facing the column of the pressure generating chambers 12, the displacement of the diaphragm is not hindered by the connection wiring layer 120. . Therefore, the thickness of the connection wiring layer 120 can be made relatively thick, and the resistance value of the lower electrode film 60 can be reliably reduced.
In the present embodiment, the through-holes 112 are provided in regions of the insulating layer 110 extending near the ends of the piezoelectric elements 300 on the extraction electrode 90 side and facing the partition walls 11, respectively. The number and position of the penetrating portions 112 are not particularly limited.

On the piezoelectric element 300 side of the flow path forming substrate 10, the sealing substrate 30 having the reservoir portion 31 constituting at least a part of the reservoir 105 serving as a common ink chamber of each pressure generating chamber 12 is provided with an adhesive 140. Are joined through. In the present embodiment, the reservoir portion 31 is formed so as to penetrate the sealing substrate 30 in the thickness direction and to extend in the width direction of the pressure generating chamber 12, and to be provided through the elastic film 50. The reservoir 105 communicates with the communication portion 13 of the flow path forming substrate 10 via 51 and serves as a common ink chamber for each pressure generating chamber 12.
As the sealing substrate 30, it is preferable to use a material having substantially the same coefficient of thermal expansion as the flow path forming substrate 10, for example, glass, ceramic material, or the like. In the present embodiment, the same material as the flow path forming substrate 10 is used. It was formed using a silicon single crystal substrate.

In addition, the adhesive 140 that joins the flow path forming substrate 10 and the sealing substrate 30 is not particularly limited, and examples thereof include an epoxy-based adhesive.
Further, in a region of the sealing substrate 30 facing the piezoelectric element 300, a piezoelectric element holding portion 32 capable of sealing the space is provided with a space that does not hinder the movement of the piezoelectric element 300. The element 300 is sealed in the piezoelectric element holding section 32.

A connection hole 33 penetrating the sealing substrate 30 in the thickness direction is provided between the piezoelectric element holding portion 32 and the reservoir portion 31 of the sealing substrate 30, that is, in a region corresponding to the ink supply path 14. ing. The extraction electrode 90 extracted from each piezoelectric element 300 extends to the connection hole 33 and is connected to an external wiring (not shown) by wire bonding or the like.

コ ン プ ラ イ ア ン ス Further, a compliance substrate 40 including a sealing film 41 and a fixing plate 42 is bonded to the sealing substrate 30. Here, the sealing film 41 is made of a material having low rigidity and flexibility (for example, a polyphenylene sulfide (PPS) film having a thickness of 6 μm), and the sealing film 41 seals one surface of the reservoir 31. Has been stopped. The fixing plate 42 is formed of a hard material such as a metal (for example, stainless steel (SUS) having a thickness of 30 μm). Since the region of the fixing plate 42 facing the reservoir 105 is the opening 43 completely removed in the thickness direction, one surface of the reservoir 105 is sealed only with the sealing film 41 having flexibility. Have been.

The ink jet recording head according to the present embodiment takes in ink from an external ink supply unit (not shown), fills the inside from the reservoir 105 to the nozzle opening 21 with ink, and then performs recording from a driving circuit (not shown). According to the signal, a voltage is applied between the lower electrode film 60 and the upper electrode film 80 corresponding to the pressure generating chamber 12 via the external wiring, and the elastic film 50, the lower electrode film 60, and the piezoelectric layer 70 are bent. By the deformation, the pressure in each pressure generating chamber 12 increases, and ink droplets are ejected from the nozzle opening 21.

Hereinafter, an example of a method for manufacturing the ink jet recording head according to the present embodiment will be described with reference to FIGS. FIGS. 5, 6, and 8 are cross-sectional views each showing a part of the silicon wafer in the longitudinal direction of the pressure generating chamber 12, and FIG. 7 is a top view of the silicon wafer.
First, as shown in FIG. 5A, the silicon wafer 100 serving as a plurality of flow path forming substrates is thermally oxidized in a diffusion furnace at about 1100 ° C. to form a silicon dioxide film 55 constituting the elastic film 50 on the entire surface. . As will be described in detail later, the silicon dioxide film 55 constitutes the elastic film 50 and is used as a mask when the silicon wafer 100 is etched.

Next, as shown in FIG. 5B, the lower electrode film 60 is formed by sputtering and patterned into a predetermined shape. Preferable material for the lower electrode film 60 is platinum (Pt) or the like. This is because it is necessary to crystallize a piezoelectric layer 70 described later, which is formed by a sputtering method or a sol-gel method, by firing at a temperature of about 600 to 1000 ° C. in an air atmosphere or an oxygen atmosphere after the film formation. Because. That is, the material of the lower electrode film 60 must be able to maintain conductivity at such a high temperature and in an oxidizing atmosphere. In particular, when the piezoelectric layer 70 is made of lead zirconate titanate (PZT), It is desirable that the change in conductivity due to the diffusion of lead oxide is small, and for these reasons, platinum is preferred.

Next, as shown in FIG. 5C, a piezoelectric layer 70 is formed. This piezoelectric layer 70 preferably has crystals oriented. For example, in the present embodiment, a so-called sol in which a metal organic substance is dissolved and dispersed in a catalyst is applied and dried to form a gel, and then fired at a high temperature to obtain a piezoelectric layer 70 made of a metal oxide, that is, a sol-gel method. To form a piezoelectric layer 70 in which crystals are oriented. As a material for the piezoelectric layer 70, a lead zirconate titanate-based material is suitable when used in an ink jet recording head. The method for forming the piezoelectric layer 70 is not particularly limited, and may be, for example, a sputtering method.
Further, a method of forming a precursor film of lead zirconate titanate by a sol-gel method, a sputtering method, or the like, and then performing crystal growth at a low temperature by a high-pressure treatment method in an alkaline aqueous solution may be used.

In any case, unlike the bulk piezoelectric, the piezoelectric layer 70 formed in this manner has crystals preferentially oriented, and in the present embodiment, the piezoelectric layer 70 has a columnar crystal. Have been. Note that the preferential orientation refers to a state in which the crystal orientation direction is not disorderly and a specific crystal plane is oriented in a substantially constant direction. Further, a columnar crystal thin film refers to a state in which substantially columnar crystals are gathered in a plane direction with their central axes substantially aligned in the thickness direction to form a thin film. Of course, a thin film formed of preferentially oriented granular crystals may be used. In addition, the thickness of the piezoelectric layer manufactured in the thin film process is generally 0.2 to 5 μm.

Next, as shown in FIG. 5D, an upper electrode film 80 is formed. The upper electrode film 80 only needs to be a material having high conductivity, and many metals such as aluminum, gold, nickel, and platinum, and a conductive oxide can be used. In the present embodiment, platinum is formed by sputtering.
Next, as shown in FIG. 5E, the piezoelectric element 300 is patterned by etching only the piezoelectric layer 70 and the upper electrode film 80.

Next, as shown in FIG. 6A, a lead electrode 90 and a laminated electrode layer 95 (not shown) are formed. For example, in the present embodiment, the first conductive layer 290 made of gold (Au) or the like is formed over the entire surface of the flow path forming substrate 10, and then the first conductive layer 290 is patterned for each piezoelectric element 300. To make each extraction electrode 90. At this time, the first conductive layer 290 in a region facing the outside of the row of the pressure generating chambers 12 is left to form the laminated electrode layer 95.

Further, etching is performed so that the piezoelectric element 300 is not destroyed by an etchant used to etch the silicon wafer 100 in a bonding region where a sealing substrate forming material that becomes the sealing substrate 30 on the silicon wafer 100 in a later step is bonded. The first moisture permeation preventing layer 96 serving as the moisture permeation preventing pattern 130 for preventing intrusion of a liquid is simultaneously formed. That is, the first moisture-permeable layer 96 is formed by leaving a continuous first conductive layer 290 with a predetermined width so as to surround the entire piezoelectric element 300. For example, in the present embodiment, the first moisture-permeable layer 96 is formed by leaving the first conductive layer 290 continuously along the periphery of the silicon wafer 100.

Next, as shown in FIG. 6B, an insulating layer 110 is formed around the row of the pressure generating chambers 12, and penetrating portions 112, 113 (not shown) are formed at predetermined positions. That is, after the insulating layer forming film 210 is formed on the entire surface of the silicon wafer 100, the opening 111 (not shown) and the penetrating portions 112 and 113 are formed by etching to form the insulating layer 110.
Further, at this time, the second moisture permeation preventing layer 114 serving as the moisture permeation preventing pattern 130 is simultaneously formed. That is, by leaving the insulating layer forming film 210 on the first moisture permeation preventing layer 96 narrower than the first moisture permeation preventing layer 96, the second moisture permeation preventing layer 114 is formed.

材質 As a material of the insulating layer forming film 210, for example, a photosensitive resin such as polyimide is preferably used. Thus, the insulating layer 110 and the second moisture permeation preventing layer 114 made of the insulating layer forming film 210 can be formed relatively easily and with high precision. The material of the insulating layer forming film 210 is not particularly limited as long as it has relatively excellent insulating properties. For example, a fluorine resin, a silicone resin, an epoxy resin, silicon oxide, silicon nitride, tantalum oxide, or the like is used. You may.

Next, as shown in FIG. 6C, a connection wiring layer 120 is formed on the insulating layer 110. That is, the second conductive layer 220 is formed on the entire surface of the flow path forming substrate 10 and then etched to form the connection wiring layer 120 having a predetermined pattern.
Since the connection wiring layer 120 is for lowering the resistance value of the lower electrode film 60 as described above, a metal having a lower specific resistance than at least the lower electrode film 60 may be used as the second conductive layer 220. Desirably, for example, gold (Au), copper (Cu), aluminum (Al) and the like are mentioned. For example, in the present embodiment, gold (Au) is formed by sputtering.

(4) At this time, the third moisture permeation preventing layer 121 to be the moisture permeation preventing pattern 130 is simultaneously formed. That is, the second conductive layer 220 is left on the first transmission preventing layer 96 so as to cover the upper surface and side surfaces of the second transmission preventing layer 114, thereby forming the third transmission preventing layer 121. Thereby, as shown in FIG. 7, the moisture-permeable prevention pattern 130 including the first transmission-preventing layer 96, the second transmission-preventing layer 114, and the third transmission-preventing layer 121 extends over the entire periphery of the silicon wafer 100. It is formed continuously.

The above is the film forming process. After forming the film in this manner, as shown in FIG. 8A, a sealing substrate forming material 230 serving as the sealing substrate 30 is bonded on the silicon wafer 100 via the moisture permeation preventing pattern 130. In the present embodiment, the silicon wafer 100 and the sealing substrate forming material 230 are joined via the adhesive 140.
As described above, when the silicon wafer 100 and the sealing substrate forming material 230 are bonded via the adhesive 140, only the bonding layer 140a that is relatively thinner than other bonding regions is formed on the moisture permeation preventing pattern 130. You.

In addition, a desired space is provided by the moisture-permeable prevention pattern 130 in a joining area between the flow path forming substrate 10 and the sealing substrate 30 which are divided into an ink jet recording head in a later step. An adhesive 140 having a desired thickness can be formed. Thereby, it is possible to form an ink jet recording head in which the bonding strength between the flow path forming substrate 10 and the sealing substrate 30 is ensured and the bonding is performed securely.

Next, as shown in FIG. 8B, the silicon dioxide film 55 is patterned, and the other surface of the silicon wafer 100 is etched using the patterned silicon dioxide film 55 as a mask, so that the pressure generating chamber 12, the ink The supply path 14 and the communication part 13 are formed. In this embodiment, the other surface of the silicon wafer 100 is anisotropically etched with an alkaline solution such as KOH to form the pressure generating chamber 12, the ink supply path 14, and the communication section 13.

Here, when the silicon wafer 100 is etched with an etchant such as an alkaline solution such as KOH, the joint between the silicon wafer 100 and the sealing substrate forming material 230 is also immersed in the etchant. However, since the moisture-permeation preventing pattern 130 is continuously formed on the peripheral portion of the silicon wafer 100 so as to surround the entire piezoelectric element 300, and the adhesive layer 140a is relatively thin, the etching solution is applied to the piezoelectric element through the adhesive layer 140a. Intrusion into the holding part 32 can be prevented. Further, the moisture permeation prevention pattern 130 is covered with the first moisture permeation prevention layer 96 and the third moisture permeation prevention layer 121 so that the surface of the second moisture permeation prevention layer 114 made of a photosensitive resin such as polyimide is not exposed. Therefore, the etchant does not enter the piezoelectric element holding portion 32 through the second moisture permeation preventing layer 114, and the second moisture permeation preventing layer 114 is not dissolved in the etchant. It is possible to reliably prevent the thin film pattern of the element 300 or the like from being destroyed by the etchant.
Thereafter, the nozzle plate 20 having the nozzle openings 21 formed thereon is joined to the surface of the silicon wafer 100 opposite to the sealing substrate forming material 230, and the silicon wafer 100 and the like are cut into one chip size as shown in FIG. By dividing the outside of the region where the moisture permeation preventing pattern 130 is formed for each flow path forming substrate 10, the ink jet recording head of the present embodiment is obtained.

(Embodiment 2)
FIG. 9 is a top view of a silicon wafer showing a method for manufacturing an ink jet recording head according to Embodiment 2 of the present invention.
As shown in FIG. 9, in the second embodiment, the moisture permeation preventing pattern 130 </ b> A is formed in a rectangular shape continuous along the outer periphery of the divided region so as to surround the entire region where the silicon wafer 10 is divided into one chip size. It is formed in. Note that a series of manufacturing steps such as a film forming process including the moisture permeation preventing pattern 130A and subsequent etching and division are the same manufacturing steps as in the first embodiment described above, and thus redundant description will be omitted.
As described above, even when the moisture permeation preventing pattern 130A is continuously formed along the outer periphery of the region divided for each flow path forming substrate 10 on the silicon wafer 100, the etching is performed in the same manner as in the first embodiment. In this case, breakage of the piezoelectric element 300 due to an etching solution such as an alkaline solution can be prevented.

(Other embodiments)
Although the first and second embodiments of the present invention have been described above, the present invention is, of course, not limited to these embodiments.
For example, in Embodiments 1 and 2 described above, each of the moisture permeation preventing patterns 130 and 130A is formed independently. However, the present invention is not particularly limited thereto. 130A may be formed. Thereby, it is possible to more reliably prevent the thin film pattern such as the piezoelectric element 300 from being destroyed by the etching solution during the etching.

In the above-described first and second embodiments, the moisture permeation preventing patterns 130 and 130A are provided along the periphery of the silicon wafer 100 in the bonding region or the outer periphery of the divided region. As long as the thin film pattern of the piezoelectric element 300 or the like on the silicon wafer can be surrounded by this, it may be formed at any position in the bonding region, and the shape is not particularly limited. For example, the moisture permeation preventing patterns 130 and 130A may be provided on at least a part of a joining region between the flow path forming substrate 10 and the sealing substrate 30 which become each ink jet recording head. As a result, when the silicon wafer 100 is divided into an ink jet recording head, the moisture permeation preventing pattern remains in at least a part of the joining region between the flow path forming substrate 10 and the sealing substrate 30 of the ink jet recording head. Thus, a laminated pattern formed by this may be provided.

Further, when a moisture permeation preventing pattern is formed on the silicon wafer 100 as a laminated pattern, the moisture permeation preventing pattern may be provided continuously over the respective peripheral portions of the inkjet recording heads into which the silicon wafer 100 is divided. . That is, the moisture permeation preventing pattern is provided continuously on the silicon wafer 100 over the joint region between the flow path forming substrate 10 and the sealing substrate 30 of each ink jet recording head. Thereby, when the silicon wafer 100 is divided, moisture permeation prevention is continuously performed so as to surround the piezoelectric element holding portion 32 over the joint region between the flow path forming substrate 10 and the sealing substrate 30 of the ink jet recording head. When the pattern remains, an individual moisture permeation preventing pattern is formed. This individual moisture permeation preventing pattern can reliably prevent moisture from permeating into the piezoelectric element holding portion 32 from the outside via the adhesive 140, and can surely prevent the piezoelectric element 300 from being broken due to the external environment. .

As the laminated pattern, both the pattern in which a part of the moisture permeation preventing pattern remains as described above and the individual moisture permeation preventing pattern may be provided. This makes it possible to more reliably prevent the etching liquid from entering the piezoelectric element holding portion 32 during manufacturing, and to allow the completed ink jet recording head to pass through the inside of the piezoelectric element holding portion 32 via the adhesive 140 from outside. Wetting can be prevented.

Further, for example, in the above-described first and second embodiments, a thin-film type ink jet recording head manufactured by applying a film forming and lithography process has been described as an example. However, the present invention is not limited to this. The present invention can be applied to a thick-film type ink jet recording head formed by a method such as attaching a green sheet.

Further, in the above-described first and second embodiments, a method of manufacturing an ink jet recording head that prints a predetermined image or character on a print medium as a liquid ejecting head has been described as an example. However, of course, the present invention is not limited to this. For example, a color material ejecting head used for manufacturing a color filter such as a liquid crystal display, an organic EL display, an electrode material ejecting head used for forming an electrode such as an FED (surface emitting display), and a biochip. The present invention can be applied to a method of manufacturing another liquid ejecting head such as a used organic ejecting head.
The present invention is not limited to the method of manufacturing a liquid jet head, but can be applied to, for example, a method of manufacturing a silicon device having a thin film pattern on a silicon substrate such as a semiconductor.

FIG. 2 is an exploded perspective view of the recording head according to the first embodiment of the present invention. FIG. 2 is a sectional view of the recording head according to the first embodiment of the present invention. FIG. 2 is a plan view showing a wiring structure of the recording head according to the first embodiment of the present invention. It is a perspective view showing the silicon wafer concerning Embodiment 1 of the present invention. FIG. 3 is a cross-sectional view illustrating a manufacturing process of the recording head according to Embodiment 1 of the present invention. FIG. 3 is a cross-sectional view illustrating a manufacturing process of the recording head according to Embodiment 1 of the present invention. FIG. 3 is a top view of the silicon wafer showing a process for manufacturing the recording head according to Embodiment 1 of the present invention. FIG. 3 is a cross-sectional view illustrating a manufacturing process of the recording head according to Embodiment 1 of the present invention. FIG. 11 is a top view of the silicon wafer showing a process for manufacturing the recording head according to Embodiment 2 of the present invention.

Explanation of reference numerals

10 channel forming substrate, {12} pressure generating chamber, {20} nozzle plate, {21} nozzle opening, {30} sealing substrate, {40} compliance substrate, {60} lower electrode film, {70} piezoelectric layer, {80} upper electrode film, {90} lead electrode, {95} laminated electrode Layers, {96} first moisture barrier layer, {100} silicon wafer, {105} reservoir, {110} insulating layer, {111} opening, {114} second moisture barrier layer, {120} connection wiring layer, {121} third moisture barrier layer, {130, 130A} transparent Wet prevention pattern, {210} insulating layer forming film, {220} second conductive layer, {230} sealing substrate forming material, {290} first conductive layer, {300} piezoelectric element

Claims (19)

The thin film pattern is hermetically sealed on a silicon substrate having a thin film pattern formed by sequentially laminating at least a first conductive layer, an insulating layer and a second conductive layer and having a concave portion on a surface opposite to the thin film pattern. In a method for manufacturing a silicon device in which a sealing substrate having a thin film pattern holding portion that defines a space is joined,
When forming the thin film pattern on one surface of a silicon wafer, a first moisture permeation preventing layer which is continuous with the first conductive layer and surrounds the entire thin film pattern of the silicon wafer is formed on the silicon wafer. Forming a second moisture barrier layer on the first moisture barrier layer that is the same layer as the insulating layer and narrower than the first moisture barrier layer; Forming a third moisture-permeable layer in the same layer as the second conductive layer and covering the second moisture-permeable layer to form a moisture-permeable pattern; A method for manufacturing a silicon device, comprising: bonding the sealing substrate via the moisture permeation preventing pattern; and etching the second surface of the silicon wafer to form the concave portion. 2. The method for manufacturing a silicon device according to claim 1, wherein the moisture permeation preventing pattern is formed continuously along a peripheral portion of the silicon wafer. 3. The method according to claim 1, wherein the concave portion is formed by wet etching the silicon wafer. The method according to any one of claims 1 to 3, wherein the second moisture permeation preventing layer is made of a photosensitive resin. 5. The method according to claim 4, wherein the photosensitive resin is polyimide. The method for manufacturing a silicon device according to any one of claims 1 to 3, wherein the second moisture permeation preventing layer is made of a fluorine resin, a silicone resin, an epoxy resin, silicon oxide, silicon nitride, or tantalum oxide. A flow channel forming substrate in which a pressure generating chamber communicating with the nozzle opening is defined; a piezoelectric element provided on the flow channel forming substrate via a vibration plate to apply pressure to the pressure generating chamber; And at least a region facing the vicinity of the longitudinal end portion of the piezoelectric element and at least a part of the lead wiring is arranged continuously in the direction in which the piezoelectric elements are juxtaposed. An insulating layer having a penetrating portion in a region opposed to a common electrode common to a plurality of piezoelectric elements, and provided continuously on the insulating layer in the direction in which the piezoelectric elements are juxtaposed through the penetrating portion; A connection wiring layer that is electrically connected to the common electrode, and a piezoelectric element holding portion that is joined to a surface of the flow path forming substrate on the piezoelectric element side and that secures a space that does not hinder the movement of the piezoelectric element. Sealing group The method of manufacturing a liquid jet head having a preparative,
Forming the vibrating plate and the piezoelectric element on a silicon wafer, and forming the extraction electrode in a bonding area of the silicon wafer where a sealing substrate forming material to be the sealing substrate is bonded, and the extraction electrode A first moisture permeation preventing layer, which is the same layer as above and is electrically independent of the extraction electrode, is continuously formed so as to surround the entire piezoelectric element formed on the silicon wafer, thereby forming the insulating layer. In addition, a second moisture permeation preventing layer of the same layer as the insulating layer is formed on the first moisture permeation preventing layer to be narrower than the first moisture permeation preventing layer, and the connection wiring layer is formed and the connection wiring is formed. Forming a third moisture barrier layer, which is the same layer as the layer and is electrically independent of the connection wiring layer, on the second moisture barrier layer so as to cover the second moisture barrier layer; A first moisture barrier layer, a second moisture barrier layer, Forming a moisture permeation preventing pattern comprising a moisture permeation preventing layer, bonding the sealing substrate forming material on the silicon wafer via the moisture permeation preventing pattern, and etching the silicon wafer A method for manufacturing a liquid jet head, comprising: a step of forming a pressure generating chamber; and a step of dividing the silicon wafer and the sealing substrate forming material into a predetermined size. 8. The method according to claim 7, wherein the moisture permeation preventing pattern is formed continuously along a peripheral portion of the silicon wafer. 9. The method for manufacturing a liquid jet head according to claim 7, wherein the moisture permeation preventing pattern is formed continuously along an outer periphery of a region where the silicon wafer is divided. The method according to any one of claims 7 to 9, wherein the moisture permeation preventing pattern includes an individual moisture permeation preventing pattern surrounding each of the piezoelectric element holding portions. The method according to any one of claims 7 to 10, wherein the pressure generating chamber is formed by wet etching the silicon wafer. The method according to any one of claims 7 to 11, wherein the insulating layer is made of a photosensitive resin. 13. The method according to claim 12, wherein the photosensitive resin is polyimide. 12. The method according to claim 7, wherein the insulating layer is made of a fluorine resin, a silicone resin, an epoxy resin, silicon oxide, silicon nitride, or tantalum oxide. A flow channel forming substrate in which a pressure generating chamber communicating with the nozzle opening is defined; a piezoelectric element provided on the flow channel forming substrate via a vibration plate to apply pressure to the pressure generating chamber; And at least a region facing the vicinity of the longitudinal end portion of the piezoelectric element and at least a part of the lead wiring is arranged continuously in the direction in which the piezoelectric elements are juxtaposed. An insulating layer having a penetrating portion in a region opposed to a common electrode common to a plurality of piezoelectric elements, and provided continuously on the insulating layer in the direction in which the piezoelectric elements are juxtaposed through the penetrating portion; A connection wiring layer that is electrically connected to the common electrode, and a piezoelectric element holding portion that is joined to a surface of the flow path forming substrate on the piezoelectric element side and that secures a space that does not hinder the movement of the piezoelectric element. Sealing group The liquid ejecting head having a preparative,
The vibrating plate and the piezoelectric element are formed in a bonding area on a silicon wafer on which a sealing substrate forming material serving as the sealing substrate is bonded, and are formed in the same layer as the lead electrode and are electrically connected to the lead electrode. Independently, a first moisture-permeable layer continuously formed so as to surround the entire piezoelectric element, and the first moisture-permeable layer on the first moisture-permeable layer in the same layer as the insulating layer. A second moisture barrier layer formed narrower than the barrier layer, and the same layer as the connection wiring layer, formed on the second moisture barrier layer so as to cover the second moisture barrier layer; and Etching the silicon wafer after bonding the silicon wafer and the sealing substrate forming material via a moisture permeation preventing pattern including a third moisture permeation preventing layer electrically independent of the connection wiring layer; The pressure generating chamber formed by A liquid ejecting head, characterized in that is obtained by dividing the. 16. The liquid jet head according to claim 15, wherein a part of the moisture permeation preventing pattern is present in at least a part of a joining region between the flow path forming substrate and the sealing substrate. A flow channel forming substrate in which a pressure generating chamber communicating with the nozzle opening is defined; a piezoelectric element provided on the flow channel forming substrate via a vibration plate to apply pressure to the pressure generating chamber; And at least a region facing the vicinity of the longitudinal end portion of the piezoelectric element and at least a part of the lead wiring is arranged continuously in the direction in which the piezoelectric elements are juxtaposed. An insulating layer having a penetrating portion in a region opposed to a common electrode common to a plurality of piezoelectric elements, and provided continuously on the insulating layer in the direction in which the piezoelectric elements are juxtaposed through the penetrating portion; A connection wiring layer that is electrically connected to the common electrode, and a piezoelectric element holding portion that is joined to a surface of the flow path forming substrate on the piezoelectric element side and that secures a space that does not hinder the movement of the piezoelectric element. Sealing group The liquid ejecting head having a preparative,
A first conductive layer formed in the same layer as the extraction electrode and electrically independent of the extraction electrode, at least in a part of a bonding region between the flow path forming substrate and the sealing substrate; An interlayer insulating layer formed on the first conductive layer in the same layer as the insulating layer and having a width smaller than that of the first conductive layer; and an interlayer on the interlayer insulating layer in the same layer as the connection wiring layer. A liquid ejecting head comprising a laminated pattern formed so as to cover an insulating layer and comprising a second conductive layer electrically independent of the connection wiring layer. 18. The silicon wafer according to claim 17, wherein the stacked pattern is provided continuously so as to surround the entire piezoelectric element in a silicon wafer state divided into the flow path forming substrate, and is divided into the silicon wafer and the silicon element. A liquid jet head comprising a moisture permeation preventing pattern formed in a joint region with a sealing substrate forming layer serving as a sealing substrate. 19. The liquid jet head according to claim 17, wherein the laminated pattern includes an individual moisture permeation preventing pattern continuously provided so as to surround the piezoelectric element holding portion.

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