JP2004072120A5

JP2004072120A5 -

Info

Publication number: JP2004072120A5
Application number: JP2003302071A
Authority: JP
Filing date: 2003-07-19
Publication date: 2006-08-03

Claims

A method of developing an exposed resist on a substrate, the step of exhausting from a first peripheral area around the substrate to be processed, and a second between the first peripheral area and the substrate And a step of evacuating from the peripheral area.

A method of developing an exposed resist on a substrate, the step of exhausting from a first peripheral region around the substrate during development of the substrate, and between the first peripheral region and the substrate And a step of exhausting from the second peripheral area and exhausting from the first peripheral area.

A method of developing an exposed resist on a substrate, wherein when the development process is performed with the substrate supported, a step of exhausting from a first peripheral area around the substrate, and the substrate being subjected to vacuum suction And a step of evacuating from the second peripheral region between the first peripheral region and the substrate when the rinsing step is performed in a state where the substrate is held.

A method of developing an exposed resist on a substrate in a processing chamber, the first step of holding the back side of the substrate by vacuum suction and supplying a developer to the substrate, and the back side of the substrate And a second process for supporting the development process, wherein the flow of the air flow in the processing chamber is changed in the first and second processes.

A method of developing an exposed resist on a substrate in a processing chamber, the first step of supporting a back side of the substrate and supplying a developing solution to the substrate, and a development process supporting the back side of the substrate And a third step of holding the back side of the substrate by vacuum suction and supplying a rinsing liquid to the substrate, the first step and / or the third step. A developing method characterized in that the flow of the air flow in the processing chamber is changed in the step and the second step.

A method of developing an exposed resist on a substrate in a processing chamber, wherein a back surface side of the substrate is held by vacuum suction, a developer is supplied to the substrate, and then a developer concentration on the substrate is changed. A first step and a second step for supporting the back side of the substrate and advancing the development process, wherein the flow of airflow in the processing chamber is changed in the first and second steps. Developing method.

A method for developing an exposed resist on a substrate in a cup, comprising the step of supporting or holding the back side of the substrate and simultaneously supplying a developer to the substrate and the cup. Method.

A method of developing an exposed resist on a substrate in a cup, the step of supporting or holding the back side of the substrate and simultaneously supplying a developer to the substrate and the cup; A developing method comprising a step of changing density.

A method of developing an exposed resist on a substrate in a cup, the step of surrounding the substrate with a first region in the cup and supplying a developer, and a second narrower than the first region in the cup And a step of enclosing the substrate in the region and supplying a rinsing liquid.

A method of developing an exposed resist on a substrate in a cup, the step of supporting a back side of the substrate while evacuating a region outside the cup and supplying a developer to the substrate and the cup; and And a step of holding the back side of the substrate while simultaneously evacuating the region inside the cup and the region outside the cup and supplying a rinsing liquid to the substrate.

A method of developing an exposed resist on a substrate in a cup, the step of supporting the back side of the substrate, and supporting the back side of the substrate again after holding the back side of the substrate by vacuum suction And a step of supplying a developing solution to the substrate.

An apparatus for developing an exposed resist on a substrate, comprising: a first enclosure disposed around the substrate; a second enclosure disposed around the first enclosure; An exhaust mechanism configured to be able to exhaust air independently and / or simultaneously with a region between a second enclosure and the first enclosure and a region within the first enclosure. A developing device.

An apparatus for developing an exposed resist on a substrate, comprising: a first enclosure disposed around the substrate; a second enclosure disposed around the first enclosure; When the substrate is supported by the support mechanism that is disposed in one enclosure and supports the substrate, the holding mechanism that is disposed in the first enclosure and holds the substrate by vacuum suction, and the support mechanism. A developing device, comprising: an exhaust mechanism that exhausts air from a region between the first enclosure and the second enclosure.

14. The developing device according to claim 12, wherein the first enclosure is configured to be movable up and down.

An apparatus for developing an exposed resist on a substrate in a cup, comprising a developer supply mechanism that supports or holds the back side of the substrate and supplies developer to the substrate and the cup. Developing device.

An apparatus for developing an exposed resist on a substrate, which is disposed on the back side of the substrate and prevents a developer from entering the center of the back side of the substrate, and a liquid entry prevention mechanism And a supporting mechanism for supporting the substrate.

An apparatus for developing an exposed resist on a substrate, the liquid intrusion prevention mechanism including a prevention unit disposed on the back side of the substrate and preventing a developer from entering the center of the back side of the substrate, and A developing device, comprising: a plurality of support mechanisms that are provided in the direction of the center of the substrate from the prevention portion of the liquid intrusion prevention mechanism and support the substrate.

An apparatus for developing an exposed resist on a substrate in a cup, and a liquid intrusion prevention device provided with a prevention unit disposed on the back side of the substrate and preventing a developer from entering the center of the back side of the substrate A mechanism, a plurality of support mechanisms provided in the direction of the center of the substrate from the prevention portion of the liquid intrusion prevention mechanism, and supporting the substrate, and the substrate is supported by the support mechanism and the development process is in progress. And a control mechanism for stopping exhaust from the developing device.

An apparatus for developing an exposed resist on a substrate, comprising: a first enclosure disposed around the substrate; a second enclosure disposed around the first enclosure; A holding mechanism that is disposed in one enclosure and holds the substrate by vacuum suction; and a developer that is disposed in the first enclosure and disposed on the back side of the substrate and enters the center of the back surface of the substrate. A liquid intrusion prevention mechanism for preventing liquid, a plurality of support mechanisms provided in the liquid intrusion prevention mechanism for supporting the substrate, a region between the second enclosure and the first enclosure, and the first A developing device comprising: an exhaust mechanism configured to be capable of exhausting simultaneously or selectively an area within the enclosure.

The developing device according to claim 16, 17, 18, or 19, wherein the liquid intrusion prevention mechanism is configured to be movable up and down.

A method of performing processing by supplying a processing liquid to a substrate, the step of exhausting from a first peripheral region around the substrate, and a second peripheral region between the first peripheral region and the substrate And a process of exhausting air from the first peripheral area.

A method of supplying a processing liquid to a substrate in a cup disposed in a processing chamber to which a temperature / humidity controlled gas is supplied, and performing the processing without stopping the supply of the temperature / humidity controlled gas Further, during the processing of the substrate, the exhaust from the inside of the cup is reduced or stopped, and the gas is exhausted from the outside of the cup.

An apparatus for performing processing by supplying a processing liquid to a substrate in a cup disposed in a processing chamber, and having an air flow variation mechanism that changes the flow of air flow in the processing chamber in conjunction with the vertical movement of the cup. A liquid processing apparatus characterized by that.

A developing apparatus for developing an exposed resist on a substrate to be processed and / or a substrate processing apparatus having a coating apparatus for supplying and applying a resist solution to the substrate to be processed, wherein the developing apparatus and / or the coating apparatus includes A substrate enclosure provided and disposed around the substrate to be processed; an enclosure disposed around the substrate enclosure; a region between the enclosure and the substrate enclosure; and the substrate enclosure A substrate processing apparatus comprising: an evacuation mechanism configured to be able to evacuate each region independently and / or simultaneously.

The developing device is provided with setting means for moving and setting the upper surface height position of the substrate enclosure and the processing surface of the substrate to be processed to substantially the same height position, and the coating apparatus includes the substrate enclosure. A region between the enclosure and the substrate enclosure by an exhaust mechanism provided inside the substrate enclosure by an opening / closing mechanism configured to be able to communicate or block at a position below the substrate to be processed. 25. The substrate processing apparatus according to claim 24, wherein a region in the substrate enclosure is exhausted simultaneously while maintaining a constant exhaust amount.

A substrate processing apparatus including a developing device for developing an exposed resist on a substrate to be processed, the substrate enclosure being provided in the developing device and disposed around the substrate to be processed, and the substrate enclosure A surrounding enclosure, a setting means for relatively moving and setting an upper surface height position of the substrate enclosure and a processing surface of the substrate to be processed to substantially the same height position; and On the other hand, a developing solution supply mechanism that supplies the developing solution, and an exhaust gas that is discharged from a region between the enclosure and the substrate enclosure during development of the substrate on which the developing solution is accumulated by the developing solution supply mechanism. A mechanism, a rinsing liquid supply mechanism for supplying a rinsing liquid to the substrate to be processed, and the exhaust mechanism for evacuating a region within the substrate enclosure during the rinsing process of the substrate to be processed supplied by the rinsing liquid supply mechanism Different exhaust mechanism, The substrate processing apparatus characterized by equipped.

A substrate processing apparatus including a developing device for developing an exposed resist on a substrate to be processed, the substrate enclosure being provided in the developing device and disposed around the substrate to be processed, and the substrate enclosure A surrounding enclosure, a setting means for relatively moving and setting an upper surface height position of the substrate enclosure and a processing surface of the substrate to be processed to substantially the same height position; and On the other hand, a developing solution supply mechanism that supplies the developing solution, and during development of the substrate to be processed on which the developing solution is accumulated by the developing solution supply mechanism, exhaust and developing from a region between the enclosure and the substrate enclosure. An exhaust drainage mechanism for recovering the liquid, a rinse liquid supply mechanism for supplying a rinse liquid to the substrate to be processed, and a rinse treatment of the substrate to be processed supplied by the rinse liquid supply mechanism in the substrate enclosure Collect exhaust and rinse liquid from the area That the substrate processing apparatus is characterized in that anda different exhaust drainage mechanism and the exhaust drainage mechanism.

A substrate processing apparatus including a developing device for developing an exposed resist on a substrate to be processed, the substrate enclosure being provided in the developing device and disposed around the substrate to be processed, and the substrate enclosure A surrounding enclosure, a setting means for relatively moving and setting an upper surface height position of the substrate enclosure and a processing surface of the substrate to be processed to substantially the same height position, and the substrate to be processed; A developing solution supply mechanism for supplying a developing solution to the substrate enclosure at the same time, and development of the substrate to be processed on which the developing solution has been accumulated by the developing solution supply mechanism, and simultaneously on the substrate to be processed and the substrate enclosure When supplying the developing solution, an exhaust / draining mechanism for collecting exhaust and developing solution from a region between the enclosure and the substrate enclosure, and a rinsing solution supply mechanism for supplying a rinsing solution to the substrate to be processed And supplied by this rinse liquid supply mechanism The substrate processing apparatus during the rinsing of the substrate, characterized in that anda different exhaust drainage mechanism and the exhaust drainage mechanism for recovering the exhaust and the rinse liquid from the substrate enclosure body region.

The relationship between the processing surface of the substrate to be processed by the setting means and the substantially same height position is a positional relationship in which the developing solution can be held by surface tension between the substrate enclosure and the substrate to be processed. The substrate processing apparatus according to any one of claims 25 to 28.

The setting means includes a support mechanism that supports a plurality of point contacts or line contacts from the back surface of the substrate to be processed, a moving mechanism that is configured to move the support mechanism up and down, and a support mechanism that is provided in the support mechanism. 30. The substrate processing apparatus according to claim 25, further comprising: a back surface of the substrate and a ring member configured to hold the developer or / and the rinse with surface tension.

The ring member includes a first inclined portion on an inner side and a second inclined portion on an outer side, and the second inclined portion is configured to have an acute angle with respect to the first inclined portion. Item 31. The substrate processing apparatus according to any one of items 25 to 30.

32. The substrate processing apparatus according to claim 25, wherein an uneven portion is formed on an upper portion of the ring member.

The contact portion of the support mechanism that contacts the back surface of the substrate to be processed is formed of a member having a lower thermal conductivity or / and an elastic member or / and a member having a higher frictional resistance than other portions of the support mechanism. 33. A substrate processing apparatus according to claim 25, wherein the substrate processing apparatus is characterized in that:

The cleaning liquid supply mechanism for supplying a cleaning liquid to the ring member and / or the gas supply mechanism for supplying a gas to the ring member are further provided. Substrate processing equipment.

The substrate processing apparatus according to any one of claims 25 to 34, further comprising a groove portion that promotes a liquid flow in the ring member.

36. The substrate processing apparatus according to claim 25, further comprising a liquid supply mechanism that supplies a predetermined liquid to the space between the ring member and the back surface of the substrate to be processed.

The substrate processing apparatus further includes a coating device for supplying and applying a resist solution to the substrate. The coating device includes a substrate enclosure disposed around the substrate, and a substrate enclosure disposed around the substrate enclosure. 27. An evacuation mechanism configured to be evacuated at the same time, and an area between the enclosure and the substrate enclosure and an area in the substrate enclosure. 36. The substrate processing apparatus according to any one of 36.

The substrate processing apparatus further includes a coating device for supplying and applying a resist solution to the substrate. The coating device includes a substrate enclosure disposed around the substrate, and a substrate enclosure disposed around the substrate enclosure. And an evacuation mechanism that is configured to be evacuated at the same time so that the area between the enclosure and the substrate enclosure and the area within the substrate enclosure can be evacuated at the same time. The substrate processing apparatus according to any one of claims 26 to 36.

The substrate processing apparatus further includes a coating device for supplying and applying a resist solution to the substrate. The coating device includes a substrate enclosure disposed around the substrate, and a substrate enclosure disposed around the substrate enclosure. And an area between the enclosure and the substrate enclosure and an area within the substrate enclosure are simultaneously exhausted while maintaining a constant displacement by an exhaust mechanism provided inside the enclosure and the substrate enclosure. 37. The substrate processing apparatus according to claim 26, wherein:

The substrate processing apparatus further includes a developing device placement portion for placing a plurality of the developing devices in a stacked manner and a coating device placement portion for placing the coating devices in a stacked manner, and exhausts the plurality of developing devices collectively. 40. The apparatus according to claim 24, further comprising: a developing device exhaust path that exhausts downward, and a coating apparatus exhaust path that exhausts exhaust from the plurality of coating apparatuses downward collectively. 2. The substrate processing apparatus according to 1.

The substrate processing apparatus is further provided with a developing device placement portion for placing a plurality of the developing devices in a stacked manner and a coating device placement portion for placing the coating devices in a stacked manner. A developing device exhaust path that exhausts the exhaust air of the coating apparatus in a downward direction and a coating apparatus exhaust path that exhausts the exhaust gases of the plurality of coating apparatuses in a downward direction at a time. 40. The substrate processing apparatus according to claim 24, wherein the apparatus arrangement section side or the coating apparatus exhaust path is arranged on the developing apparatus arrangement section side of the coating apparatus arrangement section.

The substrate processing apparatus further includes a developing device placement portion for placing a plurality of the developing devices in a stacked manner and a coating device placement portion for placing the coating devices in a stacked manner, and exhausts the plurality of developing devices collectively. Then, the developing device exhaust path that exhausts vertically downward, the coating device exhaust path that exhausts exhaust from the plurality of coating devices vertically vertically, and directly below the coating device exhaust path and the developing device exhaust path 40. The storage container for the developer or / and the rinsing solution or / and the resist solution is disposed at a position where there is no developer and at a position below the developing device disposing portion and the coating device portion. Substrate processing equipment.

The atmosphere in the developing device and / or the coating device is set so that the oxygen concentration or / and the acid gas or / and the basic gas or / and the amount of humidity are lower than in other regions. The substrate processing apparatus according to any one of claims 24 to 42.

44. The substrate processing apparatus according to claim 24, wherein the substrate enclosure is circular and the enclosure is circular or square.

45. The substrate processing apparatus according to claim 24, wherein an internal pressure in the developing device or / and the coating device is set higher than that in other regions.

46. The substrate processing apparatus according to claim 24, wherein an exhaust area in the substrate enclosure is smaller than an exhaust area in the enclosure.

A substrate processing method for processing a substrate to be processed using the apparatus according to any one of claims 12 to 20, 22, and 24 to 45.

Using a method according to any of claims 1 to 11, 21 or a device according to any of claims 12 to 20, claim 22, 24 to 46. A substrate manufacturing method comprising manufacturing a substrate to be processed.