TW202323985A - Substrate processing device and substrate processing method - Google Patents

Abstract

An object of the invention is to improve the substrate in-plane uniformity of the dimensions of a resist pattern prepared using a metal-containing resist. A substrate processing device of the invention comprises: a hydroxylation processing unit which, for individual substrates on which a coating of a metal-containing resist has been formed and then subjected to exposure, performs hydroxylation processing of the coating on the substrate, a heat processing unit which performs heat processing of the substrate with the coating that has undergone the hydroxylation processing, and a development processing unit which performs development processing of the coating on the substrate that has undergone heat processing, wherein the hydroxylation processing unit comprises a substrate support section which supports the substrate, a lid which covers the processing space above the substrate support section, and a gas discharge section which discharges a gas containing water into the processing space.

Description

Substrate processing apparatus and substrate processing method

The present invention relates to a substrate processing device and a substrate processing method.

Patent Document 1 discloses a pattern forming apparatus for forming a predetermined resist pattern on a semiconductor substrate using a chemically amplified resist. In this substrate processing apparatus, the control section makes the substrate stand by at both the transfer section and the standby section of the post-exposure bake unit so that the time between the completion of exposure of the exposure device and the start of post-exposure bake processing in the post-exposure bake unit It is fixed on each substrate. [Prior Art Literature] [Patent Document]

Patent Document 1: Japanese Patent Laid-Open No. 2008-130857

[Problem to be solved by the invention]

The technique of the present invention improves the in-plane uniformity of the size of the resist pattern using the metal-containing resist. [How to solve the problem]

One aspect of the present invention is a substrate processing apparatus including: a hydrogen oxidation treatment unit for applying hydrogen oxidation to the coating film of a substrate on which a coating film containing a metal resist is formed and subjected to an exposure process. treatment; a heat treatment unit for applying heat treatment to the substrate on which the aforementioned hydrogen oxidation treatment has been applied; and a development treatment unit for applying development treatment to the aforementioned coating film of the substrate on which the aforementioned heat treatment has been applied; and the aforementioned hydrogen oxidation treatment The unit includes: a substrate supporting part, which supports the substrate; a cover, covering the processing space on the substrate supporting part; and a gas spraying part, which sprays the gas containing moisture into the processing space. [Effect of Invention]

According to the present invention, the in-plane uniformity of the size of a resist pattern using a metal-containing resist can be improved.

In the manufacturing process of semiconductor devices, etc., a predetermined process for forming a resist pattern on a semiconductor wafer (hereinafter referred to as "wafer") is performed. The above predetermined processing is, for example, the following processing: resist coating processing, supplying the resist solution to the wafer to form a resist film; exposure processing, exposing the resist film: PEB (Post Exposure Bake, exposure Post-baking) treatment, which is heated after exposure to promote the chemical reaction in the resist film; and development treatment, which develops the exposed resist film.

In recent years, as resists, metal-containing resists are sometimes used instead of chemically amplified resists. Also, the PEB process using a metal-containing resist is carried out after exhausting the ambient gas around the substrate, but the size of the resist pattern may be uneven in the plane depending on the form of the exhaust.

Therefore, the technique of the present invention improves the in-plane uniformity of the size of the resist pattern using the metal-containing resist.

Hereinafter, a substrate processing apparatus and a substrate processing method according to the present embodiment will be described with reference to the drawings. In addition, in the present invention and the illustrations, components having substantially the same functions are denoted by the same reference numerals, so as to omit repeated explanations.

＜Coating and developing processing equipment＞ FIG. 1 is an explanatory diagram showing a schematic internal configuration of a coating and development processing apparatus as a substrate processing apparatus according to the present embodiment. 2 and 3 are schematic diagrams showing the internal configurations of the front side and the back side of the coating and development processing apparatus 1, respectively.

The coating and development processing apparatus 1 forms a resist pattern on a wafer W as a substrate using a negative metal-containing resist (more specifically, a metal oxide resist). In addition, the metal contained in the metal-containing resist is optional, for example, it is tin.

As shown in FIGS. 1 to 3, the coating and development processing apparatus 1 includes: a cassette station 2 for loading and unloading a cassette C, which is a container capable of accommodating a large number of wafers; and a processing station 3 for applying a plurality of resist coatings. Various processing units for predetermined processing such as cloth processing. Furthermore, the coating and development processing apparatus 1 has a configuration in which a cassette station 2 , a processing station 3 , and an interface station 5 for transferring a wafer W between exposure devices 4 adjacent to the processing station 3 are integrally connected.

The cassette station 2 is divided into, for example, a cassette loading/unloading unit 10 and a wafer transporting unit 11 . For example, the cassette loading/unloading unit 10 is provided at the Y-direction negative (left direction in FIG. 1 ) side end of the coating and developing processing apparatus 1 . The cassette loading and unloading unit 10 is provided with a cassette mounting table 12 . A plurality of, for example, four loading plates 13 are provided on the cassette loading table 12 . The mounting plates 13 are arranged side by side in a row in the X direction (the vertical direction in FIG. 1 ) in the horizontal direction. These loading plates 13 can place the cassette C when the cassette C is loaded and unloaded from the outside of the cloth developing processing apparatus 1 .

The wafer transport unit 11 is provided with a transport unit 20 for transporting the wafer W. The conveyance unit 20 is configured to move freely on a conveyance lane 21 extending in the X direction. The transfer unit 20 is also free to move up and down and around the vertical axis (theta direction), and can transfer wafers between the cassette C on each loading plate 13 and the transfer device of the third block G3 of the processing station 3 described later. W.

The processing station 3 includes four blocks G1 , G2 , G3 , and G4 , for example, a plurality of various units, for example, first to fourth. For example, a first block G1 is provided on the front side of the processing station 3 (the negative side in the X direction in FIG. 1 ), and a second block G2 is provided on the back side of the processing station 3 (the positive side in the X direction in FIG. 1 ). Also, the cassette station 2 side of the processing station 3 (the negative side of the Y direction in FIG. 1 ) is provided with a third block G3, and the interface station 5 side of the processing station 3 (the positive side of the Y direction in FIG. 1 ) is provided with a third block G3. Four block G4.

As shown in Figure 2, the first block G1 is equipped with a large number of liquid processing units, such as a development processing unit 30, a lower anti-reflection film forming unit 31, a resist coating unit 32, and an upper anti-reflection coating unit. Film forming unit 33 . The developing processing unit 30 applies developing processing to the wafer W. Specifically, the developing processing unit 30 applies developing processing to the metal-containing resist film of the wafer W subjected to the PEB processing. The lower anti-reflection film forming unit 31 forms an anti-reflection film (hereinafter referred to as “lower anti-reflection film”) on the layer below the metal-containing resist film of the wafer W. The resist coating unit 32 applies a metal-containing resist to the wafer W to form a coating film of the metal-containing resist, that is, a metal-containing resist film. The upper anti-reflection film forming unit 33 forms an anti-reflection film (hereinafter referred to as "upper anti-reflection film") on a layer above the metal-containing resist film of the wafer W.

For example, three development processing units 30 , a lower antireflective film forming unit 31 , a resist coating unit 32 , and an upper antireflective film forming unit 33 are arranged side by side in the horizontal direction. In addition, the number and arrangement of the developing processing unit 30, the lower anti-reflection film forming unit 31, the resist coating unit 32, and the upper anti-reflection film forming unit 33 can be selected arbitrarily.

In the development treatment unit 30 , the lower antireflection film forming unit 31 , the resist coating unit 32 , and the upper antireflection film forming unit 33 , a predetermined treatment liquid is applied to the wafer W by, for example, spin coating. In the spin coating method, for example, the processing liquid is sprayed onto the wafer W from a discharge nozzle, and the wafer W is rotated to diffuse the processing liquid onto the surface of the wafer W.

For example, as shown in Figure 3, the second block G2 is arranged side by side in the vertical direction and the horizontal direction: a heat treatment unit 40, which applies heat treatment such as heating and cooling of the wafer W; The resist and the wafer W are subjected to hydrophobization treatment for the bonding property; and the peripheral exposure unit 42 exposes the peripheral portion of the resist film on the wafer W. The number and arrangement of these heat treatment units 40 , hydrophobization treatment units 41 , and peripheral exposure units 42 can also be selected arbitrarily. In addition, in the heat treatment unit 40, a pre-baking treatment (hereinafter referred to as "PAB treatment") of heating the wafer W after the resist coating treatment is performed, and the wafer W after the exposure treatment is heated. PEB processing for processing, post-baking processing (hereinafter referred to as "POST processing") for heat-treating wafer W after development processing, and the like. In the present embodiment, among the heat treatment units 40, the heat treatment unit 40 used for the PEB treatment is integrated with the hydrogen oxidation treatment unit 40a for performing the hydrogen oxidation treatment to constitute a mixing unit M described later. The configurations of the heat treatment unit 40, the hydrogen oxidation treatment unit 40a, and the mixing unit M used in this PEB treatment will be described later.

For example, the third block G3 is provided with a plurality of transfer units 50 , 51 , 52 , 53 , 54 , 55 , and 56 sequentially from the bottom. Moreover, the fourth block G4 is provided with a plurality of transfer units 60 , 61 , 62 and a backside cleaning unit 63 for cleaning the backside of the wafer W in order from the bottom.

As shown in FIG. 1 , a wafer transfer area D is formed in the area surrounded by the first block G1 to the fourth block G4 . In the wafer transfer area D, for example, a transfer unit 70 as a substrate transfer unit for transferring the wafer W is arranged.

The conveyance unit 70 has a conveyance arm 70a, and is movable in, for example, the Y direction, the θ direction, and the vertical direction. The transport unit 70 moves the transport arm 70a holding the wafer W in the wafer transport area D, and can transport the wafer W to the surrounding first block G1, second block G2, third block G3, and fourth area. Intended installations within block G4. For example, as shown in FIG. 3 , a plurality of transfer units 70 are arranged vertically, and the wafer W can be transferred, for example, to a predetermined unit in which the heights of the blocks G1 to G4 are about the same.

In addition, the wafer transfer area D is provided with a shuttle transfer unit 80, which linearly transfers the wafer W between the third block G3 and the fourth block G4.

The shuttle transfer unit 80 linearly moves the supported wafer W in the Y direction, and transfers the wafer W between the transfer unit 51 of the third block G3 and the transfer unit 60 of the fourth block G4 having approximately the same height.

As shown in FIG. 1 , a transport unit 90 is provided on the positive side in the X direction of the third block G3 . The conveyance unit 90 has a conveyance arm 90a, and is movable in, for example, the θ direction and the vertical direction. The transport unit 90 moves the transport arm 90a holding the wafer W up and down, and can transport the wafer W to each transfer unit in the third block G3.

The interface station 5 is provided with a transport unit 100 and a transfer unit 101 . The conveyance unit 100 has a conveyance arm 100a that can move freely in, for example, the θ direction and the vertical direction. The transfer unit 100 can hold the wafer W on the transfer arm 100a, and transfer the wafer W between each transfer unit, the transfer unit 101 and the exposure device 4 in the fourth block G4.

As shown in FIG. 1 , the above coating and development processing apparatus 1 is provided with a control unit 200 . The control unit 200 is a computer including a processor such as a CPU and a memory, and has a program storage unit (not shown). The program storage unit stores programs, and the programs control the operation of the drive systems of the above-mentioned various processing units and various transfer units, and control the wafer processing described later. In addition, the above-mentioned program is recorded on a computer-readable non-transitory recording medium H, and may be installed from the recording medium H to the control unit 200 . The memory medium H can be temporary or non-temporary. Part or all of the program can also be realized by using dedicated hardware (circuit board).

＜Wafer Processing＞ Next, an example of wafer processing using the coating and developing processing apparatus 1 will be described. Note that the following processing is performed under the control of the control unit 200 .

First, the cassette C containing many wafers W is carried into the cassette station 2 of the coating and developing processing apparatus 1 , and placed on the loading plate 13 . Thereafter, the transfer unit 53 of the third block G3 of the processing station 3 is transferred by taking out each wafer W in the cassette C sequentially by the transfer unit 20 .

Next, the wafer W is transported by the transport unit 70 to the heat treatment unit 40 of the second block G2 for temperature adjustment treatment. Thereafter, the wafer W is transported by the transport unit 70 to, for example, the lower anti-reflective film forming unit 31 of the first block G1 , and the lower anti-reflective film is formed on the wafer W. Thereafter, the wafer W is transported to the heat treatment unit 40 of the second block G2 for heat treatment. Thereafter, the wafer W returns to the transfer unit 53 of the third block G3.

Next, the wafer W is also transported by the transport unit 90 to the transfer unit 54 of the third block G3. Thereafter, the wafer W is transported by the transport unit 70 to the hydrophobization treatment unit 41 of the second block G2 for hydrophobization treatment.

Next, the wafer W is transported by the transport unit 70 to the resist coating unit 32 , and a metal-containing resist film is formed on the wafer W. Thereafter, the wafer W is transported by the transport unit 70 to the heat treatment unit 40 for PAB treatment. Thereafter, the wafer W is transported by the transport unit 70 to the transfer unit 55 of the third block G3.

Next, the wafer W is transported by the transport unit 70 to the upper anti-reflection film forming unit 33 , and the upper anti-reflection film is formed on the wafer W. Thereafter, the wafer W is transported by the transport unit 70 to the heat treatment unit 40 for heating and temperature adjustment. Thereafter, the wafer W is transported to the peripheral exposure unit 42 for peripheral exposure processing.

Thereafter, the wafer W is transported by the transport unit 70 to the transfer unit 56 of the third block G3.

Next, the wafer W is transported by the transport unit 90 to the transfer unit 52 , and is transported by the shuttle transport unit 80 to the transfer unit 62 of the fourth block G4 . Thereafter, the wafer W is transported by the transport unit 100 to the back cleaning unit 63 to clean the back side. Next, the wafer W is transported by the transport unit 100 of the interface station 5 to the exposure device 4 , and is exposed in a predetermined pattern using EUV light.

Next, the wafer W is transported by the transport unit 100 to the transfer unit 60 of the fourth block G4. Thereafter, the wafer W is transported by the transport unit 70 to the heat treatment unit 40 integrated with the hydrogen oxidation treatment unit 40 a described later, and after the hydrogen oxidation treatment is performed, the PEB treatment is performed. The hydrogen oxidation treatment and PEB treatment in this heat treatment unit 40 will be described later.

Next, the wafer W is transported by the transport unit 70 to the development processing unit 30 to be developed. After the development is completed, the wafer W is transported by the transport unit 90 to the heat treatment unit 40 for POST treatment.

Thereafter, the wafer W is transported by the transport unit 70 to the transfer unit 50 of the third block G3 , and then transported by the transport unit 20 of the cassette station 2 to the cassette C on the predetermined loading plate 13 . In this way, a series of lithography procedures are completed.

＜Heat Treatment Unit＞ Next, the heat treatment unit 40 used for the PEB treatment among the heat treatment units 40 will be described. 4 and 5 are a schematic longitudinal sectional view and a transverse sectional view schematically showing the configuration of a heat treatment unit 40 used in the PEB treatment, respectively. FIG. 6 is a schematic vertical cross-sectional view schematically showing the configuration of a heating region 310 to be described later. FIG. 7 is a schematic vertical cross-sectional view schematically showing the configuration of a hydrogen oxidation treatment region 311 described later. FIG. 8 is a schematic bottom view schematically showing the configuration of a cover body 390 described later.

The heat treatment unit 40 shown in FIG. 4 and FIG. 5 is integrated with the hydrogen oxidation treatment unit 40 a disposed adjacent to the heat treatment unit 40 to form a mixing unit M. The hydrogen oxidation treatment unit 40a applies a hydrogen oxidation treatment to the metal-containing resist film of the wafer W on which the metal-containing resist film is formed and subjected to the exposure process for each wafer W. Further, the heat treatment unit 40 applies heat treatment to the wafer W on which the metal-containing resist film has been subjected to the hydrogen oxidation treatment. The hydrogen oxidation treatment unit 40 a is provided on the wafer transfer area D side in the mixing unit M.

The mixing unit M has a process container 300 whose interior can be closed. A loading/unloading port (not shown) for wafer W is formed on the side of the processing container 300 on the side of the hydrogen oxidizing unit 40 a , that is, on the side of the wafer transfer area D, and a shutter (not shown) is provided at the loading/unloading port.

Inside the processing container 300 are provided: a heating area 310 for performing heat treatment; and a hydrogen oxidation treatment area 311 for performing hydrogen oxidation treatment on the metal-containing resist film on the wafer W. The heating zone 310 and the hydrogen oxidation treatment zone 311 are arranged side by side in the Y direction.

As shown in FIG. 6 , the heating area 310 is provided with: a chamber 320 covering a heat treatment space S1 on a hot plate 350 to be described later, and accommodating a wafer W during heat treatment. The chamber 320 has: an upper chamber 321 located on the upper side, which can be lifted freely; and a lower chamber 322 located on the lower side, which is integrated with the upper chamber 321 and can be sealed inside.

The upper chamber 321 has a substantially cylindrical shape with an open bottom. Inside the upper chamber 321 , at a position facing the hot plate 350 described later, a shower head 330 is provided as a gas ejection unit for ejecting moisture-containing gas, that is, moisture-containing gas, into the heat treatment space S1 . Specifically, the shower head 330 sprays the gas containing moisture toward the wafer W supported by the hot plate 350 described later. In addition, the shower head 330 is configured to freely move up and down in synchronization with the upper chamber 321 .

A plurality of gas supply holes 331 are formed on the bottom surface of the shower head 330 . A large number of gas supply holes 331 are uniformly arranged on the bottom surface of the shower head 330 except for the central exhaust passage 340 described later. The shower head 330 is connected to a gas supply pipe 332 . Furthermore, the gas supply pipe 332 is connected to a gas supply source 333 for supplying moisture-containing gas to the shower head 330 . Also, the gas supply pipe 332 is provided with: a supply equipment group 334 including a flow valve for controlling the flow of the gas containing moisture and a flow regulating valve; and a temperature adjustment mechanism 335 for adjusting the temperature of the gas containing moisture.

The inside of the gas supply source 333 stores gas whose moisture concentration is adjusted to, for example, 20% to 80%. Then, the moisture-containing gas with the moisture concentration adjusted in this way is supplied to the heat treatment space S1 inside the chamber 320 through the shower head 330 , so that the heat treatment space S1 is adjusted to a predetermined range such as 20% to 80% humidity. In addition, the temperature of the moisture-containing gas supplied to the heat treatment space S1 is adjusted to a predetermined range, such as 20° C. to 50° C., by the temperature adjustment mechanism 335 .

Furthermore, the shower head 330 is provided with a central exhaust duct 340 as an exhaust portion for exhausting the heat treatment space S1. The central exhaust channel 340 is formed to extend from the central portion of the bottom surface of the shower head 330 to the central portion of the top surface. The central exhaust channel 340 is connected with: a central exhaust pipe 341 , which is arranged at the central part of the top surface of the upper chamber 321 . Furthermore, the central exhaust pipe 341 is connected with an exhaust device 342 such as a vacuum pump. In addition, the central exhaust pipe 341 is provided with an exhaust equipment group 343 having valves and the like for controlling the flow of exhausted gas. The central exhaust duct 340 can exhaust the heat treatment space S1 from above the center of the wafer W supported by the hot plate 350 described later.

As described above, by evacuating the heat treatment space S1 , the gas containing the metal-containing sublimation generated from the metal-containing resist film during the PEB process can be recovered, and contamination of the wafer W by the metal-containing sublimation can be suppressed. In particular, as described above, the heat treatment space S1 is exhausted from above the center of the wafer W, thereby preventing the gas containing the metal-containing sublimated product from contacting and contaminating the back surface and the peripheral portion of the wafer W.

The lower chamber 322 has a substantially cylindrical shape with an open top surface. The opening of the top surface of the lower chamber 322 is provided with: a hot plate 350 as a supporting heating part for supporting and heating the wafer W; The hot plate 350 is roughly disc-shaped with a considerable thickness. In addition, for example, a heater 352 is built in the hot plate 350 . Furthermore, the temperature of the hot plate 350 is controlled by, for example, the control unit 200 , and the wafer W placed on the hot plate 350 is heated to a predetermined temperature.

For example, three lift pins 360 are provided inside the lower chamber 322 and below the hot plate 350 to support and lift the wafer W from below. The lift pin 360 can move up and down by a lift drive unit 361 having a drive source such as a motor. Near the central part of the heating plate 350 , for example, three through holes 362 are formed, penetrating the heating plate 350 in the thickness direction. Also, the lifting pin 360 may pass through the through hole 362 to protrude from the top surface of the heating plate 350 . The lift pins 360 and the lift drive unit 361 constitute a lift mechanism for lifting and lowering the wafer W in the thermal processing space S1.

As shown in FIGS. 4 and 5 , the hydrogen oxidation treatment area 311 is provided with a temperature regulating plate 370 as a substrate supporting portion. The temperature regulating plate 370 has a substantially square flat plate shape, and the end surface on the heating plate 350 side is curved in an arc shape. The temperature regulating plate 370 is formed with two slits 371 along the Y direction. The slit 371 is formed from the end surface of the temperature regulating plate 370 on the side of the heating plate 350 to the vicinity of the central portion of the temperature regulating plate 370 . The slit 371 can prevent the temperature regulating plate 370 from interfering with the lift pin 360 of the heating area 310 and the lift pin 380 of the hydrogen oxidation treatment area 311 described later. In addition, temperature adjustment means (not shown) such as cooling water or a Peltier element is incorporated in the temperature adjustment plate 370 . The temperature of the temperature adjustment plate 370 is controlled by the control unit 200, for example, and the wafer W placed on the temperature adjustment plate 370 is adjusted to a predetermined temperature. Accordingly, the temperature control plate 370 can control the temperature of the wafer W placed on the temperature control plate 370 at a predetermined temperature at which the metal-containing resist film does not undergo dehydration condensation.

The temperature regulating plate 370 is supported by a support arm 372 . The support arm 372 is equipped with a driving unit 373 having a driving source such as a motor. The driving part 373 is mounted on a slide rail 374 extending in the Y direction. The sliding rail 374 extends from the hydrogen oxidation treatment area 311 to the heating area 310 . Through the driving part 373 , the temperature regulating plate 370 can move along the sliding rail 374 between the initial position in the hydrogen oxidation treatment area 311 and the transfer position in the heating area 310 . The temperature adjustment plate 370, the support arm 372, the driving part 373 and the slide rail 374 constitute: a substrate transport mechanism, between the hydrogen oxidation treatment area 311 and the heating area 310 (that is, between the heat treatment unit 40 and the hydrogen oxidation treatment unit 40a) Wafer W is transported. That is, in the present embodiment, the temperature regulating plate 370 constitutes the above-mentioned substrate transfer mechanism.

For example, three lift pins 380 are disposed below the temperature control plate 370 for supporting and lifting the wafer W from below. The lift pin 380 can move up and down by the lift drive part 381 . In addition, the lift pin 380 may be inserted through the slit 371 to protrude from the top surface of the temperature regulating plate 370 .

As shown in FIG. 7 , the hydrogen oxidation treatment area 311 is provided with a cover 390 covering the treatment space S2 on the temperature regulating plate 370 . The lid body 390 is configured to move up and down with respect to the temperature control plate 370 , and accommodates the wafer W placed on the temperature control plate 370 between it and the temperature control plate 370 during the hydrogen oxidation process. That is, the lid 390 and the temperature control plate 370 constitute a chamber for housing the wafer W during the hydrogen oxidation process.

The cover body 390 has a substantially cylindrical shape with an open bottom. Inside the cover body 390 and at a position facing the temperature regulating plate 370, a shower head 400 is provided as a gas jetting part for jetting gas containing moisture into the processing space S2. Specifically, the shower head 400 sprays the gas containing moisture toward the wafer W supported by the temperature control plate 370 at the initial position. In addition, the shower head 400 is configured to be freely raised and lowered in synchronization with the cover body 390 .

Furthermore, the shower head 400 is formed with: a plurality of spray holes 401 distributed along the surface facing the wafer W supported by the temperature adjustment plate 370 (ie, the bottom surface). More specifically, as shown in FIG. 8 , for example, the plurality of discharge holes 401 are substantially evenly arranged in the area facing the wafer W on the temperature control plate 370 among the bottom surface of the shower head 400 . The plurality of spray holes 401 can also be distributed along the space on the top surface of the wafer W on the temperature control plate 370 so that the moisture content (humidity) in the plane of the wafer W is substantially uniform. The opening areas of the spray holes 401 are, for example, substantially the same as each other.

As shown in FIG. 7 , a gas supply pipe 402 is connected to the shower head 400 . Furthermore, the gas supply pipe 402 is connected to a gas supply source 403 for supplying moisture-containing gas to the shower head 400 . In addition, the gas supply pipe 402 is provided with: a supply equipment group 404 including valves for controlling the circulation of the gas containing moisture and a flow regulating valve; and a temperature adjustment mechanism 405 for adjusting the temperature of the gas containing moisture.

The inside of the gas supply source 403 stores gas whose water concentration is adjusted to be, for example, 20% to 80%. Then, the moisture-containing gas whose moisture concentration is adjusted in this way is supplied to the processing space S2 via the shower head 400, thereby adjusting the processing space S2 to a humidity within a predetermined range, for example, 20% to 80%. In addition, the temperature of the moisture-containing gas supplied to the processing space S2 is adjusted to a predetermined range such as 20° C. to 50° C. by the temperature adjustment mechanism 405 .

Hydroxidation treatment is explained here. The inventors of the present invention have made careful research and found that, unlike the present embodiment, when PEB treatment is performed without hydrogen oxidation treatment, the size of the resist pattern (for example, line width) may become non-uniform in the plane of the wafer W. . In particular, in the PEB process, evacuation is performed in order to recover gas containing metal-containing sublimates. Due to the form of the evacuation, the uniformity of the above-mentioned dimensions in the wafer surface may not be good. Specifically, as in this embodiment, the central exhaust method in which the heat treatment space S1 is exhausted from above the center of the wafer W can suppress metal-containing exhaust compared with the outer peripheral exhaust method in which the exhaust is exhausted from the outer periphery of the wafer W. The sublimation material contaminates from the back surface and the peripheral portion of the wafer W, but the uniformity of the above-mentioned dimensions in the wafer surface may not be good. The cause of the in-plane unevenness in the size of the resist pattern in the case where the PEB treatment is performed without performing the hydroxide treatment is considered as follows.

That is, the metal-containing resist is in an active state by cutting the bond between the metal and the ligand (organometallic complex) in the resist by ultraviolet rays during the exposure process. The metal-containing resist in this active state reacts with moisture in the atmosphere, and the hydroxyl groups are combined to form side chains of the metal-containing resist. That is, the metal-containing resist is subjected to hydrogen oxidation to become a precursor. Also, the metal-containing resist (precursor) oxidized by hydroxide is insoluble in a developing solution due to dehydration condensation during PEB processing. Also, only in the moisture in the air, the metal-containing resist in the active state is only partially oxidized with hydrogen. Also in general PEB processing, hydrogen oxidation (precursorization) occurs due to water generation due to dehydration condensation in PEB processing. Furthermore, hydrogen oxidation is also caused by the moisture in the moisture-containing gas supplied to the wafer W during the PEB process. Therefore, it can be considered that in the general PEB process, the exhaust method of the heat treatment space S1 affects the flow of the moisture-containing gas supplied to the wafer W during the process, and the size of the resist pattern is in the plane of the wafer W. Uneven situation. For example, in the above-mentioned central exhaust system, it is considered that the moisture concentration (humidity) of the wafer W is higher above the center of the wafer W in the heat treatment space S1 than above the peripheral portion of the wafer W. Therefore, hydrogen oxidation and dehydration condensation proceed, and as a result, the line width of the resist pattern becomes thicker at the center of the wafer W, and becomes thinner at the peripheral portion of the wafer W.

Therefore, in this embodiment, prior to the PEB process, the wafer W is first subjected to a hydrogen oxidation process for oxidizing the metal-containing resist in an active state so that only the dehydration condensation mainly proceeds in the PEB process. Thereby, the metal-containing resist film on the wafer W is not affected by the moisture in the moisture-containing gas during the PEB process, and the resist pattern can be formed regardless of the exhaust method of the heat treatment space S1 during the PEB process. The size of is uniform in the plane of the wafer W.

Return to the description of the hydrogen oxidation treatment area 311 . As shown in FIG. 7 , inside the cover body 390 and on the outer peripheral portion of the shower head 400 , an outer peripheral exhaust passage 410 is formed as an exhaust portion for exhausting the processing space S2 . The peripheral exhaust channel 410 is connected with: a peripheral exhaust pipe 411 disposed on the top surface of the cover 390 . Furthermore, an exhaust device 412 such as a vacuum pump is connected to the peripheral exhaust pipe 411 . In addition, the peripheral exhaust pipe 411 is provided with an exhaust equipment group 413 having valves and the like for controlling the flow of exhausted gas. The peripheral exhaust channel 410 can exhaust the processing space S2 from above the outer periphery of the wafer W supported by the temperature adjustment plate 370 .

＜Hydrogen treatment and PEB treatment＞ Next, the hydrogen oxidation treatment and PEB treatment performed using the mixing unit M will be described. 9 and 10 are explanatory views showing the operation of the mixing unit M, respectively. In addition, the wafer W carried into the mixing unit M is formed with a metal-containing resist film.

(Step S1: Wafer loading) First, after the wafer W is carried into the hydro-oxidation unit 40 a of the mixing unit M by the transfer unit 70 , the lift pins 380 are raised to transfer the wafer W from the transfer unit 70 to the lift pins 380 . Next, the lift pins 380 are lowered, and the wafer W is placed on the temperature control plate 370 at the initial position as shown in FIG. 9( a ).

(Step S2: Hydrogen oxidation treatment) Thereafter, as shown in FIG. 9( b ), the cover 390 is lowered to contact the temperature regulating plate 370 , and the processing space S2 is defined by the cover 390 and the temperature regulating plate 370 . Thereafter, the wafer W on the tempering plate 370 is subjected to a hydrogen oxidation treatment.

In this hydrogen oxidation treatment, the water-containing gas whose water concentration is adjusted to be, for example, 20% to 80% is supplied from the shower head 400 at a flow rate of, for example, 4 L/min, and the processing space S2 is adjusted to be, for example, 20% to 80%. humidity. Then, the moisture contained in the moisture-containing gas condenses the metal-containing resist film adhering to the wafer W, and the hydrogen oxidation (precursorization) of the metal-containing resist is promoted by the moisture.

In addition, in this hydrogen oxidation treatment, the temperature of the gas containing moisture supplied from the shower head 400 and the temperature of the wafer W on the temperature control plate 370 regulated by the temperature control plate 370 are determined as the metal-containing resist. A given temperature at which the agent does not undergo dehydration condensation. The predetermined temperature in the hydrogen oxidation treatment is specifically, for example, 20°C to 50°C, more specifically, for example, 20°C to 30°C.

Furthermore, in this hydrogen oxidation treatment, the gas containing moisture is injected from the shower head 400 through the plurality of spray holes 401 distributed along the surface facing the wafer W supported by the temperature control plate 370, that is, the bottom surface. Evenly supplied to the wafer W. Therefore, the hydrogen oxidation of the metal-containing resist on the wafer W can be performed uniformly within the surface of the wafer W.

Furthermore, in the hydrogen oxidation process, the processing space S2 is exhausted from the peripheral exhaust channel 410 (that is, above the peripheral portion of the wafer W). By degassing in this way, it is possible to more uniformly oxidize the metal-containing resist on the wafer W within the surface of the wafer W. The exhaust volume of the peripheral exhaust passage 410 is, for example, above 4 L/min.

In addition, in the hydroxide treatment, since the metal-containing resist does not undergo dehydration condensation, no metal-containing sublimation product derived from the metal-containing resist is generated.

Also, the hydrogen oxidation treatment is continued, for example, within 1 minute to 10 minutes.

(Step S3: wafer handling) When the hydrogen oxidation treatment is completed, the supply of moisture-containing gas from the shower head 400 and the exhaust through the peripheral exhaust passage 410 are stopped, and the lid body 390 rises as shown in FIG. 9( c ). Then, the temperature regulating plate 370 is moved along the sliding rail 374 to the transfer position above the heating plate 350 by the driving part 373 . Next, the lift pins 360 are raised to transfer the wafer W to the lift pins 360 . And, the temperature regulating plate 370 returns to the initial position.

(Step S4: PEB processing) Next, as shown in FIG. 10( a ), the upper chamber 321 descends to abut against the lower chamber 322 , and the inside of the chamber 320 is hermetically sealed. Thereafter, the lift pins 360 descend to place the wafer W on the hot plate 350 . And, the wafer W is subjected to PEB processing.

In this PEB process, the temperature on the hot plate 350 heated by the hot plate 350 is set as a predetermined temperature at which the metal-containing resist on the wafer W undergoes dehydration condensation. The predetermined temperature in the PEB process is specifically, for example, 150°C to 200°C.

In addition, in the PEB treatment of this embodiment, like the hydrogen oxidation treatment, the water concentration is adjusted from the shower head 330 to, for example, 20% to 80%. S1 is adjusted to a humidity of, for example, 20% to 80%. The moisture contained in the moisture-containing gas can promote the hydrogen oxidation when the hydrogen oxidation of the metal-containing resist is not completed during the hydrogen oxidation treatment.

Also, in the PEB process, the temperature of the hot plate 350 is uniform within the plane. Therefore, the dehydration condensation of the metal-containing resist that has undergone hydrogen oxidation can be performed uniformly within the wafer surface, and the size of the resist pattern can be made uniform within the wafer surface.

Furthermore, during the PEB process, the heat treatment space S1 is exhausted from the central exhaust channel 340 (ie, above the center of the wafer W). By evacuating in this way, compared with the case of exhausting from above the outer periphery of the wafer W, the gas on the back surface and the outer periphery of the wafer W can be suppressed by the gas containing sublimated metals generated during the PEB process. is polluted.

(Step S5: Rise to the middle standby position) When the PEB process is completed, the water-containing gas is continuously supplied from the shower head 330 and exhausted through the central exhaust channel 340, and the lift pin 360 is directly raised to transfer the wafer W to the lift pin 360, as shown in Figure 10(b) , move to the middle standby position. The intermediate standby position is, for example, a position where the distance from the top surface of the wafer W to the bottom surface of the shower head 330 becomes half of that during the PEB process.

During the period of moving to the intermediate standby position, the lifting speed of the wafer W by the lift pins 360, that is, the rising speed of the wafer W just heated by the hot plate 350, is lower than that of the wafer W in step S6 described later. The speed at which W rises to the standby position is specifically 10 mm/s or less (for example, 5 mm/s). Reducing the rising speed of wafer W in this way has the following effects. That is, the metal-containing sublimation is generated from the metal-containing resist film on the wafer W immediately after the heating by the hot plate 350 , that is, after the PEB process. On the other hand, by reducing the rising speed of the wafer W as described above, the gas containing sublimated metals between the wafer W and the bottom surface of the shower head 330 is kept between the wafer W and the bottom surface of the shower head 330 while the wafer W is moved to the intermediate standby position. , flows toward the radially outer side of the wafer W, and can suppress contamination of the back surface and the peripheral portion of the wafer W.

(Step S6: move to the standby position) Thereafter, the moisture-containing gas is continuously supplied from the shower head 330 and exhausted through the central exhaust channel 340 , and the upper chamber 321 rises directly as shown in FIG. 10( c ). At the same time, the lift pins 360 rise again to move the wafer W to the standby position. In this procedure, the lifting of the upper chamber 321 and the lifting pin 360 is carried out simultaneously or alternately, so that the distance between the bottom surface of the shower head 330 and the top surface of the wafer W falls within the distance between the gas containing sublimated metals. A predetermined range that does not leak from between the bottom surface of the shower head 330 and the top surface of the wafer W. In other words, in this procedure, the upper chamber 321 and the lifting pins 360 are lifted simultaneously or alternately, so that the distance between the bottom surface of the shower head 330 and the top surface of the wafer W becomes as long as the central exhaust channel 340 can be maintained. The distance formed to remove gas containing metal-containing sublimates. Thereby, the gas containing the metal-containing sublimated substance can be suppressed from wrapping around the back surface of the wafer W, etc., and contamination of the back surface of the wafer W, etc., can be suppressed.

(Step S7: wafer handling) Thereafter, the supply of moisture-containing gas from the shower head 330 and exhaust through the central exhaust channel 340 are stopped, and the temperature-regulating plate 370 is moved along the slide rail 374 to the transfer position above the heating plate 350 by the drive unit 373 . Next, the lift pins 360 descend to transfer the wafer W to the temperature control plate 370 . And, the temperature regulating plate 370 returns to the initial position.

(Step S8: wafer cooling and unloading) Then, the wafer W is placed on the temperature control plate 370 to cool for a predetermined time. Thereafter, in the reverse order of the wafer loading in step S1, the wafer W is transferred to the lift pins 360, and then transferred to the transfer unit 70, and the transfer unit 70 transfers the wafer W from the mixing unit M to the hydrogen oxidation process. Unit 40a is moved out.

<Main effects of this embodiment> As described above, in this embodiment, the hydrogen oxidation treatment unit 40a is provided, and the metal-containing resist film on the wafer W subjected to the exposure treatment is subjected to PEB treatment on a wafer-by-wafer basis. The circle is subjected to a hydroxide treatment. Furthermore, the hydrogen oxidation treatment unit 40a has: a temperature control plate 370 for supporting the substrate; a cover 390 covering the processing space S2 of the temperature control plate 370; and a shower head 400 for spraying moisture-containing gas into the processing space S2. By using the hydrogen oxidation treatment unit 40a, the hydrogen oxidation of the metal-containing resist film on the wafer W can be sufficiently and uniformly performed within the surface of the wafer W before the PEB treatment. Therefore, in the PEB process, the dehydration condensation of the metal-containing resist can mainly proceed without performing the above-mentioned hydrogen oxidation. The dehydration condensation of each part of the metal-containing resist is hardly affected by the moisture supplied to the part from the metal-containing resist film around the part or the like. Therefore, as long as the hydrogen oxidation of the metal-containing resist film on the wafer W is sufficiently and uniformly performed in the plane of the wafer W as described above before the PEB treatment, the PEB treatment can be performed on the surface of the wafer W. The dehydration condensation of the metal-containing resist is carried out uniformly in the surface. Therefore, according to the present embodiment, the in-plane uniformity of the size of the resist pattern using the metal-containing resist can be improved.

In addition, in this embodiment, since the dehydration condensation of the metal-containing resist mainly proceeds without performing the above-mentioned hydrogen oxidation during the PEB treatment, the result of the PEB treatment will not be affected by the exhaust of the heat treatment space S1 during the PEB treatment. The influence of the air flow of the gas containing moisture. Therefore, in this embodiment, various methods can be adopted as the method of exhausting the heat treatment space S1 during the PEB treatment. For example, the aforementioned central exhaust method can be used. According to this method, compared with the above-mentioned peripheral exhaust method, it is possible to prevent the gas containing the metal-containing sublimation from contacting and contaminating the back surface of the wafer W and the peripheral portion. That is, according to the present embodiment, it is possible to prevent the gas containing metal-containing sublimation from contacting and contaminating the back surface and the peripheral portion of the wafer W, and to improve the in-plane uniformity of the size of the resist pattern using the metal-containing resist. .

In addition, in this embodiment, the heat treatment unit 40 is arranged adjacent to the hydrogen oxidation treatment unit 40a. Therefore, the PEB treatment by the heat treatment unit 40 can be performed immediately after the hydrogen oxidation treatment by the hydrogen oxidation treatment unit 40 a. Therefore, from the completion of the hydroxide treatment to the start of the PEB treatment, it is possible to prevent the metal-containing resist film from being affected by the moisture in the atmosphere and adversely affecting the in-plane uniformity of the line width of the resist pattern.

In addition, in the present embodiment, the temperature control plate 370 is configured as a part of the substrate transfer mechanism for transferring the wafer W between the heat treatment unit 40 and the hydrogen oxidation treatment unit 40a. Therefore, it is possible to further shorten the time from the hydrogen oxidation treatment of the wafer W on the temperature control plate 370 to the PEB treatment in the heat treatment unit 40 .

Furthermore, in this embodiment, the mixed unit M in which the heat treatment unit 40 and the hydrogen oxidation treatment unit 40a are integrated includes a substrate transfer mechanism for transferring the wafer W between the heat treatment unit 40 and the hydrogen oxidation treatment unit 40a. Therefore, the wafer W after the hydrogen oxidation treatment in the hydrogen oxidation treatment unit 40a can be transported to the heat treatment unit 40 without being affected by the transport schedule of other wafers W, and can be immediately subjected to PEB treatment.

＜Confirmation Test 1＞ The measurement of the line width of the resist pattern containing the metal resist was carried out in the case where the PEB treatment was performed without performing the hydrogen oxidation treatment and the above-mentioned central exhaust method, and in the case where the PEB treatment was also performed after the hydrogen oxidation treatment. test. In the case of no hydrogen oxidation treatment, the average value of the line width is about 13.8nm, and the deviation of the line width within the wafer surface (specifically, the difference between the maximum value and the minimum value) is about 1.2nm. On the other hand, when the hydrogen oxidation treatment is performed, the average value of the line width is about 15.4nm, and the deviation of the line width within the wafer surface is 0.5nm or less. From these results, it can be seen that the in-plane uniformity of the resist pattern can be improved by performing the hydrogen oxidation treatment.

<Confirmation Test 2> In addition, in the PEB process after the hydrogen oxidation process, the central exhaust method was used to exhaust the heated wafer W at a low speed of 10 mm/s or less (specifically, 5 mm/s). In this case, and also in the case of exhausting in the central exhaust mode and raising the newly heated wafer W at a high speed exceeding 10mm/s (specifically, 15mm/s), the wafer W after processing was measured. The test of the number of tin atoms detected on the peripheral part and the back side. The number of detected tin atoms was 1.6×10 ¹² /cm ² in the case of high-speed rise, and 8.1×10 ⁹ atoms/cm ² in the case of low-speed rise. From these results, it can be seen that contamination of the back surface and the peripheral portion of the wafer W by the metal-containing resist film from the metal-containing resist film can be suppressed by lowering the raising speed of the wafer W immediately after heating.

＜Modifications＞ In the above example, the moisture-containing gas is supplied to the top surface of the wafer W from above the wafer W, but the supply method of the moisture-containing gas is not limited to this. For example, the moisture-containing gas can also be supplied in the form of a unidirectional flow flowing along the top surface of the wafer W from one end side toward the other end side in the Y direction.

Also, in the above example, the heat treatment unit 40 and the hydrogen oxidation treatment unit 40a are integrated, but these may be independent.

All points of the embodiments disclosed this time are examples, and should not be considered as restrictive. The above-mentioned embodiments can be omitted, substituted, and changed in various forms as long as they do not deviate from the scope of the appended claims and the gist.

1: Coating and developing treatment device 2: Box station 3: Processing station 4: Exposure device 5: Interface station 10: Cassette loading and unloading department 11:Wafer handling department 12: Cassette loading platform 13: Loading plate 20: Handling unit 21: Carrying lane 30: Development processing unit 31: Lower anti-reflection film forming unit 32: Resist coating unit 33: Upper anti-reflection film forming unit 40: Heat treatment unit 40a: Hydrogen oxidation treatment unit 41: Hydrophobic treatment unit 42:Peripheral exposure unit 50,51,52,53,54,55,56,60,61,62: transfer unit 63: Back cleaning unit 70: Handling unit 70a: Carrying arm 80: shuttle handling unit 90: Handling unit 90a: Carrying arm 100: Handling unit 100a: Carrying arm 101: Transfer unit 200: control department 300: Process container 310: heating area 311:Hydrogen treatment area 320: chamber 321: upper chamber 322: lower chamber 330: sprinkler head 331: gas supply hole 332: gas supply pipe 333: Gas supply source 334: supply equipment group 335: temperature adjustment mechanism 340: Central exhaust duct 341: central exhaust pipe 342: exhaust device 343:Exhaust equipment group 350: hot plate 351: holding member 352: heater 360: lift pin 361: Lifting drive unit 362: through hole 370: Tempering board 371: Slit 372: Support arm 373: drive unit 374: slide rail 380:Lift pin 381: Lifting drive unit 390: cover body 400: sprinkler head 401: spout hole 402: gas supply pipe 403: Gas supply source 404: supply equipment group 405: temperature adjustment mechanism 410: Peripheral exhaust duct 411: Peripheral exhaust pipe 412: exhaust device 413:Exhaust equipment group C: Cassette D: Wafer handling area G1: the first block G2: the second block G3: The third block G4: The fourth block H: memory media M: mixed unit S1: heat treatment space S2: processing space W: Wafer

FIG. 1 is an explanatory diagram showing a schematic internal configuration of a coating and development processing apparatus as a substrate processing apparatus according to the present embodiment. Fig. 2 is a schematic diagram showing the internal structure of the front side of the coating and development processing apparatus. Fig. 3 is a schematic diagram showing the internal structure of the back side of the coating and development processing apparatus. Fig. 4 is a schematic longitudinal sectional view schematically showing the configuration of a heat treatment unit used in PEB treatment. Fig. 5 is a schematic cross-sectional view schematically showing the configuration of a heat treatment unit used in PEB treatment. Fig. 6 is a schematic longitudinal sectional view schematically showing the configuration of the heating region. Fig. 7 is a schematic vertical cross-sectional view schematically showing the configuration of the hydrogen oxidation treatment region. Fig. 8 is a schematic bottom view schematically showing the structure of the cover. 9( a ) to ( c ) are explanatory diagrams showing the operation of the mixing unit at the time of the hydrogen oxidation treatment and the PEB treatment. 10( a ) to ( c ) are explanatory diagrams showing the operation of the mixing unit at the time of the hydrogen oxidation treatment and the PEB treatment.

40: Heat treatment unit

40a: Hydrogen oxidation treatment unit

300: Process container

310: heating area

311:Hydrogen treatment area

320: chamber

321: upper chamber

322: lower chamber

330: sprinkler head

331: gas supply hole

332: gas supply pipe

340: Central exhaust duct

341: central exhaust pipe

350: hot plate

351: holding member

360: lift pin

361: Lifting drive unit

370: Tempering board

372: Support arm

373: drive unit

374: slide rail

380:Lift pin

381: Lifting drive unit

390: cover body

400: sprinkler head

401: spout hole

402: gas supply pipe

410: Peripheral exhaust duct

411: Peripheral exhaust pipe

M: mixed unit

W: Wafer

Claims (11)

A substrate processing device, comprising: a hydrogen oxidation treatment unit for applying a hydrogen oxidation treatment to the substrates on which the coating film containing the metal resist is formed and subjected to the exposure treatment; a heat treatment unit for applying heat treatment to the substrate on which the hydrogen oxidation treatment has been applied; and a development treatment unit, which applies a development treatment to the coating film of the substrate to which the heat treatment has been applied; And the hydrogen oxidation treatment unit includes: The substrate supporting part supports the substrate; a cover covering the processing space on the substrate support; and The gas ejection unit ejects gas containing moisture into the processing space. The substrate processing device according to claim 1, wherein, The substrate support unit includes a temperature control plate, on which the substrate is placed, and the temperature of the substrate is adjusted at a predetermined temperature at which the coating film does not undergo dehydration condensation. The substrate processing device according to claim 2, wherein, The predetermined temperature is below 30°C. The substrate processing apparatus according to any one of claims 1 to 3, wherein, The gas jetting part has a plurality of jetting holes distributed along the surface facing the substrate supported by the substrate supporting part. The substrate processing apparatus according to any one of claims 1 to 3, wherein, The hydrogen oxidation processing unit has an exhaust unit for exhausting the processing space from the outer peripheral side of the substrate supported by the substrate support unit. The substrate processing apparatus according to any one of claims 1 to 3, wherein, The heat treatment unit contains: Support the heating part, support and heat the substrate; a chamber covering the heat treatment space on the support heating portion; and The exhaust part exhausts the heat treatment space. The substrate processing device according to claim 6, further comprising: The substrate transport unit is used to transport the substrate into and out of the hydrogen oxidation treatment unit; The heat treatment unit is arranged adjacent to the hydrogen oxidation treatment unit, It further includes: a substrate transport mechanism for transporting the substrate between the heat treatment unit and the hydrogen oxidation treatment unit. The substrate processing device according to claim 7, wherein, The substrate support unit constitutes the substrate transfer mechanism. The substrate processing device according to claim 6, wherein, The exhaust part of the heat treatment unit exhausts air from above the center of the substrate supported by the supporting heating part. The substrate processing device according to claim 6, wherein, The heat treatment unit has: a lifting mechanism for lifting the substrate in the heat treatment space; And the lifting mechanism lifts the substrate just heated by the supporting heating unit at a speed of 10 mm/s or less. A substrate processing method, comprising the following procedures: For the coating film of the substrate on which the coating film containing the metal resist is formed and subjected to the exposure treatment, the hydrogen oxidation treatment is applied to each substrate; applying heat treatment to the substrate on which the coating film has been subjected to the hydrogen oxidation treatment; applying developing treatment to the coating film of the substrate to which the heat treatment has been applied; And the procedures for carrying out the hydrogen oxidation treatment include the following procedures: The moisture-containing gas is sprayed to the processing space on the substrate supporting part that supports the substrate.

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