JP2004062096A5 - - Google Patents

Download PDF

Info

Publication number
JP2004062096A5
JP2004062096A5 JP2002224038A JP2002224038A JP2004062096A5 JP 2004062096 A5 JP2004062096 A5 JP 2004062096A5 JP 2002224038 A JP2002224038 A JP 2002224038A JP 2002224038 A JP2002224038 A JP 2002224038A JP 2004062096 A5 JP2004062096 A5 JP 2004062096A5
Authority
JP
Japan
Prior art keywords
light intensity
photomask
influence
local flare
calculating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2002224038A
Other languages
English (en)
Japanese (ja)
Other versions
JP4365566B2 (ja
JP2004062096A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2002224038A priority Critical patent/JP4365566B2/ja
Priority claimed from JP2002224038A external-priority patent/JP4365566B2/ja
Priority to US10/353,938 priority patent/US6862726B2/en
Publication of JP2004062096A publication Critical patent/JP2004062096A/ja
Publication of JP2004062096A5 publication Critical patent/JP2004062096A5/ja
Application granted granted Critical
Publication of JP4365566B2 publication Critical patent/JP4365566B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2002224038A 2002-07-31 2002-07-31 光強度シミュレーション方法及びフォトマスクの設計方法 Expired - Fee Related JP4365566B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2002224038A JP4365566B2 (ja) 2002-07-31 2002-07-31 光強度シミュレーション方法及びフォトマスクの設計方法
US10/353,938 US6862726B2 (en) 2002-07-31 2003-01-30 Light intensity simulation method, program product, and designing method of photomask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002224038A JP4365566B2 (ja) 2002-07-31 2002-07-31 光強度シミュレーション方法及びフォトマスクの設計方法

Publications (3)

Publication Number Publication Date
JP2004062096A JP2004062096A (ja) 2004-02-26
JP2004062096A5 true JP2004062096A5 (https=) 2005-10-27
JP4365566B2 JP4365566B2 (ja) 2009-11-18

Family

ID=31184993

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002224038A Expired - Fee Related JP4365566B2 (ja) 2002-07-31 2002-07-31 光強度シミュレーション方法及びフォトマスクの設計方法

Country Status (2)

Country Link
US (1) US6862726B2 (https=)
JP (1) JP4365566B2 (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7392168B2 (en) * 2001-03-13 2008-06-24 Yuri Granik Method of compensating for etch effects in photolithographic processing
US7861207B2 (en) 2004-02-25 2010-12-28 Mentor Graphics Corporation Fragmentation point and simulation site adjustment for resolution enhancement techniques
US7234130B2 (en) * 2004-02-25 2007-06-19 James Word Long range corrections in integrated circuit layout designs
US7448012B1 (en) 2004-04-21 2008-11-04 Qi-De Qian Methods and system for improving integrated circuit layout
US8799830B2 (en) * 2004-05-07 2014-08-05 Mentor Graphics Corporation Integrated circuit layout design methodology with process variation bands
JP4481723B2 (ja) * 2004-05-25 2010-06-16 株式会社東芝 評価方法、マスクパターン補正方法、半導体装置の製造方法、及びプログラム
US7177010B2 (en) * 2004-11-03 2007-02-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8056022B2 (en) 2006-11-09 2011-11-08 Mentor Graphics Corporation Analysis optimizer
US7799487B2 (en) * 2007-02-09 2010-09-21 Ayman Yehia Hamouda Dual metric OPC
US7739650B2 (en) * 2007-02-09 2010-06-15 Juan Andres Torres Robles Pre-bias optical proximity correction
JP2009192811A (ja) * 2008-02-14 2009-08-27 Toshiba Corp リソグラフィーシミュレーション方法およびプログラム
JP2011066079A (ja) * 2009-09-15 2011-03-31 Toshiba Corp フレア補正方法及び半導体デバイスの製造方法
DE102010030758B4 (de) * 2010-06-30 2018-07-19 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg Steuerung kritischer Abmessungen in optischen Abbildungsprozessen für die Halbleiterherstellung durch Extraktion von Abbildungsfehlern auf der Grundlage abbildungsanlagenspezifischer Intensitätsmessungen und Simulationen
CN108733854A (zh) * 2017-04-18 2018-11-02 光宝电子(广州)有限公司 光学建模方法及其电子装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2768900B2 (ja) * 1994-05-10 1998-06-25 富士通株式会社 電磁界強度算出装置
US5680588A (en) * 1995-06-06 1997-10-21 International Business Machines Corporation Method and system for optimizing illumination in an optical photolithography projection imaging system
KR100257710B1 (ko) * 1996-12-27 2000-06-01 김영환 리소그라피 공정의 시물레이션 방법
JP3223965B2 (ja) * 1998-07-10 2001-10-29 日本電気株式会社 化学増幅型レジスト形状の計算方法及び記録媒体
AU4357400A (en) * 1999-04-15 2000-11-02 Greyson H. Gilson Method and apparatus for reference distribution aerial image formation
US6606739B2 (en) * 2000-11-14 2003-08-12 Ball Semiconductor, Inc. Scaling method for a digital photolithography system
US6745372B2 (en) * 2002-04-05 2004-06-01 Numerical Technologies, Inc. Method and apparatus for facilitating process-compliant layout optimization

Similar Documents

Publication Publication Date Title
JP2004062096A5 (https=)
CN104765246B (zh) 集成目标图形优化与光学邻近修正的方法
CN103926802B (zh) 光刻机光源与掩模的联合优化方法
CN105573064B (zh) 曝光方法、曝光装置和物品制造方法
KR20120100297A (ko) 플레어 보정방법 및 ｅｕｖ 마스크 제조방법
JP6843151B2 (ja) 光強度調整方法
TW201224674A (en) Program storage medium and method for determining exposure condition and mask pattern
JP2005302777A5 (https=)
TW200928602A (en) Storage medium storing exposure condition determination program, exposure condition determination method, exposure method, and device manufacturing method
CN104614930A (zh) 建立opc模型的方法、光学邻近校准用户目标图形的方法
CN103488061A (zh) 极紫外光刻机中匹配多个物镜的照明系统调整与设计方法
CN101241315A (zh) 非对称型移相光栅标记及在光刻机物镜像差检测中的应用
CN102645730B (zh) 一种实验型浸没式投影光刻物镜
CN103676494B (zh) 用于扫描光刻机的逐场调焦调平方法
CN102937778B (zh) 一种确定光刻照明系统中各元件之间匹配关系的方法
CN105204102B (zh) 一种单焦点光子筛
CN104698761A (zh) 基于面积的opc模型校准方法
CN113325569B (zh) 一种大焦深消色差微透镜的设计与制备方法
CN107290931A (zh) 一种改善光刻胶封装工艺的方法及光刻机系统
CN103926804B (zh) 一种用于深紫外光刻照明系统的chirp式复眼匀光单元
JP2016048299A5 (https=)
CN103744269A (zh) 光刻投影物镜波像差和成像最佳焦面的检测方法
CN103149808B (zh) 一种浸没式紫外光学系统
CN105116683A (zh) 一种光学邻近效应修正离焦模型的校准方法
CN102981375B (zh) 一种极紫外光刻照明系统中中继镜组的设计方法