JP2004056099A5 - - Google Patents

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Publication number
JP2004056099A5
JP2004056099A5 JP2003139390A JP2003139390A JP2004056099A5 JP 2004056099 A5 JP2004056099 A5 JP 2004056099A5 JP 2003139390 A JP2003139390 A JP 2003139390A JP 2003139390 A JP2003139390 A JP 2003139390A JP 2004056099 A5 JP2004056099 A5 JP 2004056099A5
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JP
Japan
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JP2003139390A
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Japanese (ja)
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JP4627971B2 (ja
JP2004056099A (ja
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Priority to JP2003139390A priority Critical patent/JP4627971B2/ja
Priority claimed from JP2003139390A external-priority patent/JP4627971B2/ja
Publication of JP2004056099A publication Critical patent/JP2004056099A/ja
Publication of JP2004056099A5 publication Critical patent/JP2004056099A5/ja
Application granted granted Critical
Publication of JP4627971B2 publication Critical patent/JP4627971B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2003139390A 2002-05-17 2003-05-16 半導体装置の作製方法 Expired - Fee Related JP4627971B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003139390A JP4627971B2 (ja) 2002-05-17 2003-05-16 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002143899 2002-05-17
JP2002160848 2002-05-31
JP2003139390A JP4627971B2 (ja) 2002-05-17 2003-05-16 半導体装置の作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2010046384A Division JP2010123998A (ja) 2002-05-17 2010-03-03 半導体装置

Publications (3)

Publication Number Publication Date
JP2004056099A JP2004056099A (ja) 2004-02-19
JP2004056099A5 true JP2004056099A5 (hr) 2006-06-29
JP4627971B2 JP4627971B2 (ja) 2011-02-09

Family

ID=31950434

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003139390A Expired - Fee Related JP4627971B2 (ja) 2002-05-17 2003-05-16 半導体装置の作製方法

Country Status (1)

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JP (1) JP4627971B2 (hr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005285830A (ja) * 2004-03-26 2005-10-13 Dainippon Printing Co Ltd ゲート絶縁膜の形成方法及び薄膜トランジスタの製造方法並びに薄膜トランジスタ
JPWO2007052393A1 (ja) * 2005-11-02 2009-04-30 シャープ株式会社 半導体装置及びその製造方法
JP2008210893A (ja) 2007-02-23 2008-09-11 Fujitsu Ltd 半導体装置とその製造方法
JP2010103303A (ja) * 2008-10-23 2010-05-06 Toshiba Corp 磁気抵抗素子及びその製造方法
WO2011114890A1 (ja) * 2010-03-16 2011-09-22 シャープ株式会社 半導体装置およびその製造方法
JP2014082388A (ja) * 2012-10-17 2014-05-08 Semiconductor Energy Lab Co Ltd 半導体装置
WO2014192210A1 (ja) * 2013-05-29 2014-12-04 パナソニック株式会社 薄膜トランジスタ装置とその製造方法、および表示装置
JP6318433B2 (ja) * 2013-11-28 2018-05-09 大陽日酸株式会社 シリコン窒化膜の形成方法及びシリコン窒化膜
CN108172626B (zh) * 2016-12-07 2020-07-10 清华大学 一种薄膜晶体管及其制备方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0316129A (ja) * 1989-03-22 1991-01-24 Fuji Electric Co Ltd 窒化シリコン膜の生成方法
JP3179779B2 (ja) * 1990-07-24 2001-06-25 株式会社半導体エネルギー研究所 窒化物絶縁膜の作製方法
JP3309509B2 (ja) * 1993-08-12 2002-07-29 セイコーエプソン株式会社 薄膜トランジスタを用いたアクティブマトリックス表示装置およびその製造方法
JPH08195494A (ja) * 1994-05-26 1996-07-30 Sanyo Electric Co Ltd 半導体装置,半導体装置の製造方法,薄膜トランジスタ,薄膜トランジスタの製造方法,表示装置
JPH09232250A (ja) * 1996-02-20 1997-09-05 Semiconductor Energy Lab Co Ltd 被膜作製方法
JPH09312406A (ja) * 1996-03-17 1997-12-02 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JPH11251599A (ja) * 1998-03-06 1999-09-17 Toshiba Corp 薄膜半導体装置の製造方法
JP2002050634A (ja) * 2000-04-28 2002-02-15 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法

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