JP2004038961A - 追記型メモリ記憶装置 - Google Patents

追記型メモリ記憶装置 Download PDF

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Publication number
JP2004038961A
JP2004038961A JP2003172932A JP2003172932A JP2004038961A JP 2004038961 A JP2004038961 A JP 2004038961A JP 2003172932 A JP2003172932 A JP 2003172932A JP 2003172932 A JP2003172932 A JP 2003172932A JP 2004038961 A JP2004038961 A JP 2004038961A
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JP
Japan
Prior art keywords
write
memory
storage device
once
rewritable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2003172932A
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English (en)
Japanese (ja)
Other versions
JP2004038961A5 (https=
Inventor
Mark W Minne
マーク・ダブリュー・ミン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hewlett Packard Development Co LP
Original Assignee
Hewlett Packard Development Co LP
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Development Co LP filed Critical Hewlett Packard Development Co LP
Publication of JP2004038961A publication Critical patent/JP2004038961A/ja
Publication of JP2004038961A5 publication Critical patent/JP2004038961A5/ja
Withdrawn legal-status Critical Current

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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
    • G06F3/0614—Improving the reliability of storage systems
    • G06F3/0616—Improving the reliability of storage systems in relation to life time, e.g. increasing Mean Time Between Failures [MTBF]
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023—Free address space management
    • G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
    • G06F3/0638—Organizing or formatting or addressing of data
    • G06F3/0643—Management of files
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
    • G06F3/0662—Virtualisation aspects
    • G06F3/0664—Virtualisation aspects at device level, e.g. emulation of a storage device or system
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
    • G06F3/0671—In-line storage system
    • G06F3/0673—Single storage device
    • G06F3/0679—Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/18—Auxiliary circuits, e.g. for writing into memory

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Human Computer Interaction (AREA)
  • Information Retrieval, Db Structures And Fs Structures Therefor (AREA)
  • Semiconductor Memories (AREA)
JP2003172932A 2002-06-28 2003-06-18 追記型メモリ記憶装置 Withdrawn JP2004038961A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/185,648 US6857054B2 (en) 2002-06-28 2002-06-28 Write-once memory storage device

Publications (2)

Publication Number Publication Date
JP2004038961A true JP2004038961A (ja) 2004-02-05
JP2004038961A5 JP2004038961A5 (https=) 2006-08-03

Family

ID=29779688

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003172932A Withdrawn JP2004038961A (ja) 2002-06-28 2003-06-18 追記型メモリ記憶装置

Country Status (3)

Country Link
US (1) US6857054B2 (https=)
JP (1) JP2004038961A (https=)
BR (1) BR0300086A (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011138221A (ja) * 2009-12-25 2011-07-14 Toshiba Corp 半導体装置及びメモリシステム
JP5129156B2 (ja) * 2006-12-15 2013-01-23 パナソニック株式会社 アクセス装置、および、ライトワンス記録システム

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1560221B1 (en) * 2004-01-29 2008-09-03 Sharp Kabushiki Kaisha Semiconductor memory device
US7112815B2 (en) * 2004-02-25 2006-09-26 Micron Technology, Inc. Multi-layer memory arrays
US7171511B2 (en) * 2004-03-24 2007-01-30 Hitachi, Ltd. WORM proving storage system
US7130209B2 (en) * 2004-10-15 2006-10-31 Atmel Corporation Flexible OTP sector protection architecture for flash memories
TWI262507B (en) * 2005-05-19 2006-09-21 Ememory Technology Inc Method for accessing memory
JP5072292B2 (ja) * 2006-09-05 2012-11-14 キヤノン株式会社 撮像装置及びその制御方法
US7752412B2 (en) * 2006-09-29 2010-07-06 Sandisk Corporation Methods of managing file allocation table information
US7681008B2 (en) * 2006-09-29 2010-03-16 Sandisk Corporation Systems for managing file allocation table information
US8683159B2 (en) * 2007-12-27 2014-03-25 Intel Corporation Delivering secured media using a portable memory device
US8275927B2 (en) * 2007-12-31 2012-09-25 Sandisk 3D Llc Storage sub-system for a computer comprising write-once memory devices and write-many memory devices and related method
JP4479806B2 (ja) * 2008-02-19 2010-06-09 ソニー株式会社 記録制御装置、記録システム、記録メディア制御方法及びプログラム
JP5253042B2 (ja) * 2008-08-22 2013-07-31 キヤノン株式会社 記録装置、その制御方法及びプログラム
TWI425355B (zh) * 2010-03-17 2014-02-01 Phison Electronics Corp 資料存取方法、記憶體控制器與儲存系統
TWI451248B (zh) * 2012-01-13 2014-09-01 Phison Electronics Corp 資料保護方法、記憶體控制器與記憶體儲存裝置
US8938575B2 (en) * 2012-04-03 2015-01-20 Hewlett-Packard Development Company, L. P. Minimized half-select current in multi-state memories
US8913454B2 (en) * 2012-10-10 2014-12-16 Cambridge Silicon Radio Limited Programmable memory with restricted reprogrammability
US9455015B2 (en) * 2014-10-10 2016-09-27 Everspin Technologies, Inc. High temperature data retention in magnetoresistive random access memory
CN115543875B (zh) * 2022-09-27 2024-07-30 深圳市紫光同创电子有限公司 一次性可编程存储器控制系统和fpga

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5029125A (en) * 1989-03-07 1991-07-02 Drexler Technology Corporation Method of reading and writing files on nonerasable storage media
US5835396A (en) * 1996-10-17 1998-11-10 Zhang; Guobiao Three-dimensional read-only memory
US6034882A (en) * 1998-11-16 2000-03-07 Matrix Semiconductor, Inc. Vertically stacked field programmable nonvolatile memory and method of fabrication
US6385074B1 (en) * 1998-11-16 2002-05-07 Matrix Semiconductor, Inc. Integrated circuit structure including three-dimensional memory array
US6545891B1 (en) * 2000-08-14 2003-04-08 Matrix Semiconductor, Inc. Modular memory device
US6711043B2 (en) * 2000-08-14 2004-03-23 Matrix Semiconductor, Inc. Three-dimensional memory cache system
US6584541B2 (en) * 2000-09-15 2003-06-24 Matrix Semiconductor, Inc. Method for storing digital information in write-once memory array
US7039780B2 (en) * 2001-06-05 2006-05-02 Hewlett-Packard Development Company, L.P. Digital camera memory system
US6675276B2 (en) * 2001-11-13 2004-01-06 Eastman Kodak Company Method for providing extensible dos-fat system structures on one-time programmable media

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5129156B2 (ja) * 2006-12-15 2013-01-23 パナソニック株式会社 アクセス装置、および、ライトワンス記録システム
US8589617B2 (en) 2006-12-15 2013-11-19 Panasonic Corporation Write once recording device
JP2011138221A (ja) * 2009-12-25 2011-07-14 Toshiba Corp 半導体装置及びメモリシステム

Also Published As

Publication number Publication date
US6857054B2 (en) 2005-02-15
BR0300086A (pt) 2004-08-10
US20040003191A1 (en) 2004-01-01

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