JP2004016878A - Apparatus for treating substrate and nozzle for supplying treating liquid - Google Patents

Apparatus for treating substrate and nozzle for supplying treating liquid Download PDF

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Publication number
JP2004016878A
JP2004016878A JP2002173209A JP2002173209A JP2004016878A JP 2004016878 A JP2004016878 A JP 2004016878A JP 2002173209 A JP2002173209 A JP 2002173209A JP 2002173209 A JP2002173209 A JP 2002173209A JP 2004016878 A JP2004016878 A JP 2004016878A
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Prior art keywords
nozzle
substrate
processing liquid
mixing chamber
fluid
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JP2002173209A
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JP4047635B2 (en
Inventor
Yukinobu Nishibe
西部 幸伸
Akinori Iso
磯 明典
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Shibaura Mechatronics Corp
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Shibaura Mechatronics Corp
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Priority to JP2002173209A priority Critical patent/JP4047635B2/en
Priority to KR1020030037003A priority patent/KR100991128B1/en
Priority to TW092115700A priority patent/TWI308358B/en
Publication of JP2004016878A publication Critical patent/JP2004016878A/en
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    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21SNON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S8/00Lighting devices intended for fixed installation
    • F21S8/08Lighting devices intended for fixed installation with a standard
    • F21S8/085Lighting devices intended for fixed installation with a standard of high-built type, e.g. street light
    • F21S8/086Lighting devices intended for fixed installation with a standard of high-built type, e.g. street light with lighting device attached sideways of the standard, e.g. for roads and highways
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21SNON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S9/00Lighting devices with a built-in power supply; Systems employing lighting devices with a built-in power supply
    • F21S9/02Lighting devices with a built-in power supply; Systems employing lighting devices with a built-in power supply the power supply being a battery or accumulator
    • F21S9/03Lighting devices with a built-in power supply; Systems employing lighting devices with a built-in power supply the power supply being a battery or accumulator rechargeable by exposure to light
    • F21S9/035Lighting devices with a built-in power supply; Systems employing lighting devices with a built-in power supply the power supply being a battery or accumulator rechargeable by exposure to light the solar unit being integrated within the support for the lighting unit, e.g. within or on a pole
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21SNON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S9/00Lighting devices with a built-in power supply; Systems employing lighting devices with a built-in power supply
    • F21S9/04Lighting devices with a built-in power supply; Systems employing lighting devices with a built-in power supply the power supply being a generator
    • F21S9/043Lighting devices with a built-in power supply; Systems employing lighting devices with a built-in power supply the power supply being a generator driven by wind power, e.g. by wind turbines
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21VFUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V21/00Supporting, suspending, or attaching arrangements for lighting devices; Hand grips
    • F21V21/10Pendants, arms, or standards; Fixing lighting devices to pendants, arms, or standards
    • F21V21/116Fixing lighting devices to arms or standards
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21VFUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V33/00Structural combinations of lighting devices with other articles, not otherwise provided for
    • F21V33/0064Health, life-saving or fire-fighting equipment
    • F21V33/0076Safety or security signalisation, e.g. smoke or burglar alarms, earthquake detectors; Self-defence devices
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21WINDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO USES OR APPLICATIONS OF LIGHTING DEVICES OR SYSTEMS
    • F21W2131/00Use or application of lighting devices or systems not provided for in codes F21W2102/00-F21W2121/00
    • F21W2131/10Outdoor lighting
    • F21W2131/103Outdoor lighting of streets or roads
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02BCLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B20/00Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
    • Y02B20/72Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps in street lighting

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  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Computer Security & Cryptography (AREA)
  • Environmental & Geological Engineering (AREA)
  • Sustainable Energy (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Nozzles (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide an apparatus for treating a substrate which supplies the substrate with a treating liquid that is prepared by diluting an adding fluid with a diluting fluid without using a mixing tank. <P>SOLUTION: In the treating apparatus in which the substrate is treated with the treating liquid sprayed from the nozzle, there are provided a nozzle main body, a mixing chamber 68 installed in the nozzle main body, a spraying part 69 communicating with the mixing chamber, a first connected hole 65, installed in the nozzle, for supplying the diluting fluid to the mixing chamber, a second connected hole 66, installed in the nozzle, for supplying the adding fluid to be diluted with the diluting fluid, and a third connecting hole 67, installed in the nozzle, for supplying a pressurized gas from the spraying part for pressurizing and spraying the treating liquid prepared by dilution of the adding fluid with the diluting fluid in the mixing chamber. <P>COPYRIGHT: (C)2004,JPO

Description

【0001】
【発明の属する技術分野】
この発明は処理液をノズル装置から噴射させて基板を処理する処理装置及び処理液供給用ノズル装置に関する。
【0002】
【従来の技術】
半導体装置や液晶表示装置などを製造する場合、半導体ウエハやガラス基板などの基板に回路パタ−ンを形成するリソグラフィプロセスがある。このリソグラフィプロセスは、周知のように上記基板にレジストを塗布し、このレジストに回路パタ−ンが形成されたマスクを介して光を照射し、ついでレジストの光が照射されない部分(あるいは光が照射された部分)を除去し、除去された部分をエッチングするなどの一連の工程を複数回繰り返すことで、上記基板に回路パタ−ンを形成するものである。
【0003】
上記一連の各工程において、上記基板が汚染されていると回路パタ−ンを精密に形成することができなくなり、不良品の発生原因となる。したがって、それぞれの工程で回路パタ−ンを形成する際には、レジストや塵埃などの微粒子が残留しない清浄な状態に上記基板を洗浄処理するということが行われている。
【0004】
基板に洗浄或いは洗浄以外の処理をする場合、その処理目的に応じて異なる種類の処理液が用いられる。処理液としてはフッ酸を純水で希釈した処理液や、高濃度のアンモニアガスを純水に溶解して希釈した処理液などのように、添加流体を希釈流体で希釈した処理液が用いられている。
【0005】
一方、基板を処理液で処理する場合、その処理液を窒素ガスなどの不活性ガスからなる加圧気体で加圧して噴射させるようにしている。それによって、基板の処理効果の向上を図ったり、処理液の使用量の減少を図るようにしている。
【0006】
処理液を加圧気体で加圧して噴射する場合、ノズル装置が用いられている。このノズル装置は上記処理液と加圧気体とが供給される一対の供給部を有する。一方の供給部からは処理液が供給され、他方の供給部からは加圧気体が供給される。それによって、処理液は加圧気体で加圧されて基板に向かって噴射される。
【0007】
上記ノズル装置に供給される処理液は、混合タンクによって添加流体と希釈流体とを予め所定の濃度に混合しておき、この混合タンクから上記ノズル装置に圧送されるようになっている。
【0008】
【発明が解決しようとする課題】
しかしながら、処理液を構成する添加流体と希釈流体とを混合タンクによって予め混合して処理液を作るようにすると、ノズル装置の上流側に上記混合タンクを設置し、この混合タンクで混合された処理液を上記ノズル装置に供給するようにしなければならない。
【0009】
そのため、このような構成によると、混合タンクが必要不可欠となるから、その分、コストの上昇を招くことになったり、混合タンクの設置場所を確保しなければならないから、装置の大型化や複雑化を招くということがある。
【0010】
この発明は、混合タンクを用いずに、添加流体が希釈用流体によって希釈された処理液を加圧流体で加圧して噴射させることができるようにした基板の処理装置及び処理液供給用ノズル装置を提供することにある。
【0011】
【課題を解決するための手段】
請求項1の発明は、基板をノズル装置から噴射される処理液によって処理する処理装置において、
ノズル本体と、
このノズル本体に設けられた混合室と、
上記ノズル本体に設けられ上記混合室に連通した噴射部と、
上記ノズル本体に設けられ上記混合室に希釈用流体を供給するための第1の供給部と、
上記ノズル本体に設けられ上記希釈用流体によって希釈される添加流体を供給するための第2の供給部と、
上記ノズル本体に設けられ上記混合室で上記添加流体を上記希釈用流体で希釈して作られた処理液を加圧して上記噴射部から噴射させる加圧気体を供給するための第3の供給部と、
を具備したことを特徴とする基板の処理装置にある。
【0012】
請求項2の発明は、上記第3の供給部には上記混合室内に突出しこの混合室でするノズル部を有する接続口体が設けられていることを特徴とする請求項1記載の基板混合されて上記噴射部に流れる処理液に向かって上記加圧気体を噴射の処理装置にある。
【0013】
請求項3の発明は、上記ノズル本体は合成樹脂によって成形され、このノズル本体にはアース可能な導電性部材が埋め込まれていることを特徴とする請求項1記載の基板の処理装置にある。
【0014】
請求項4の発明は、基板を処理するための処理液を供給する処理液供給用ノズル装置において、
処理液が供給される供給部及びその処理液が噴射される噴射部が設けられた合成樹脂製のノズル本体と、
このノズル本体にアース可能に設けられた導電性部材と、
を具備したことを特徴とする処理液供給用ノズル装置にある。
【0015】
この発明によれば、ノズル本体の混合室で添加流体が希釈用流体によって希釈されて処理液が作られるため、混合タンクを用いずに、添加流体と希釈流体とが混合されてなる処理液を加圧して噴射することができる。
【0016】
【発明の実施の形態】
以下、図面を参照しながらこの発明の実施の形態を説明する。
【0017】
図1はこの発明の一実施の形態のスピンタイプの処理装置を示し、この処理装置はカップ体1を有する。このカップ体1は処理槽の底板2(処理槽は底板のみ図示)上に設けられた下カップ3と、この下カップ3の上側に図示しない上下駆動機構によって上下駆動可能に設けられた上カップ4とからなる。
【0018】
上記下カップ3の底壁の中心部と底板2とにはこれらを貫通する通孔5が形成されており、また上記下カップ3の周壁3aには上記上カップ4の二重構造の周壁4aがスライド自在に嵌挿され、これら周壁によってラビリンス構造をなしている。
【0019】
上記上カップ4の上面は開口していて、この上カップ4が下降方向に駆動されることで、後述するようにカップ体1内でたとえば洗浄などの処理が行われた半導体ウエハなどの基板Wを図示しないロボットによって取出したり、未処理の基板Wを供給できるようになっている。
【0020】
上記下カップ3の底壁には周方向に所定間隔で複数の排出管6の一端が接続され、他端は図示しない吸引ポンプに連通している。それによって、上記基板Wを洗浄処理した処理液や洗浄処理後の乾燥処理時に上記基板Wから飛散する洗浄液が上記排出管6を通じて排出されるようになっている。
【0021】
上記底板2の下方にはベ−ス7が配置されている。このベ−ス7には上記カップ体1の通孔5と対応する位置に取付け孔8が形成されている。この取付け孔8には駆動手段を構成するパルス制御モ−タ9の固定子9aの上端部が嵌入固定されている。
【0022】
上記固定子9aは筒状をなしていて、その内部には同じく筒状の回転子9bが回転自在に嵌挿されている。この回転子9bの上端面には筒状の連結体11が下端面を接合させて一体的に固定されている。この連結体11の下端面には上記固定子9aの内径寸法よりも大径な鍔部11aが形成されている。この鍔部11aは上記固定子9aの上端面に摺動可能に接しており、それによって回転子9bの回転を阻止することなく、この回転子9bが固定子9aから抜け落ちるのを規制している。
【0023】
上記連結体11は上記カップ体1の通孔5から内部に突出し、上端面には円板状の回転体12が取付け固定されている。この回転体12の上面の周辺部には周方向に所定間隔で複数、この実施の形態では60度間隔で6本の保持部材13(2つのみ図示)が回転可能に設けられている。この保持部材13の上面には中心部に円錐状の支持ピン14が突設され、中心から偏心した位置に逆テ−パ状のロックピン15が設けられている。
【0024】
上記基板Wは図示しないロボットによって上記カップ体1内に供給される。カップ体1内に供給された基板Wは、周辺部の下面が上記支持ピン14に支持される。その状態で上記保持部材13が回転してロックピン15が偏心回転することで、基板Wの外周面に係合する。それによって、基板Wは回転体12に保持される。
【0025】
上記連結体11の外周面には付勢ばね16が設けられている。この付勢ばね16は、上記回転体12の下面側に、この回転体12に対して回転可能に設けられた親歯車(図示せず)を所定の回転方向に付勢している。この親歯車には子歯車(図示せず)が噛合しており、この子歯車は上記保持部材13の上記回転体の下面側に突出した下端部に設けられている。それによって、上記保持部材13は上記付勢ばね16によりロックピン15が基板Wの外周面に係合するロック方向に付勢されている。
【0026】
上記ロックピン15による基板Wのロック状態の解除は解除機構17によって行われる。この解除機構17は解除シリンダ18と、この解除シリンダ18によって駆動されるア−ム19と、このア−ム19の上端に設けられた解除ピン21とからなる。
【0027】
上記解除シリンダ18が作動して解除ピン21が上記親歯車の回転を阻止した状態で、上記回転体12がパルス制御モ−タ9により上記付勢ばね16の付勢力に抗して所定角度回転駆動されることで、上記保持部材13が回転されて上記ロックピン15による基板Wのロック状態が解除されるようになっている。
【0028】
上記回転体12の中心部には通孔12aが形成されている。上記回転子9bには中空状の固定軸22が通され、この固定軸22の上端部は上記回転体12の通孔12a内に位置している。固定軸22の上端にはノズルヘッド23が設けられている。このノズルヘッド23には上記回転体12に保持された基板Wの下面に向けて洗浄液を噴射する複数の下部ノズル体24が設けられている。
【0029】
上記回転体12の上面側は乱流防止カバ−29によって覆われている。この乱流防止カバ−29には上記ノズルヘッド23を露出させる開口部29aと、上記保持部材13を露出させる開口部29bとが形成されている。この乱流防止カバ−29の上面は、上記支持ピン14に支持された基板Wの下面にわずかな間隔で離間しており、回転体12の回転にともない基板Wの下面側に乱流が生じるのを防止している。
【0030】
上記カップ体1内に保持された基板Wの上面側には、ノズル装置31が基板Wの径方向に沿って揺動可能に設けられている。このノズル装置31からは処理液が噴射され、この処理液によって上記基板Wの上面をたとえば洗浄などの処理を行うようになっている。
【0031】
上記ノズル装置31は、図1に示すように垂直部42と水平部43とによってほぼ逆L字状をなした取付け部材としてのア−ム体41の、上記水平部43の先端部に形成された取付け部43aに軸線を垂直線に対して所定の角度で傾斜させて取付けられている。
【0032】
上記ア−ム体41の垂直部42は上記ベ−ス7に形成された挿通孔47を通され、このア−ム体41を所定の角度内で揺動駆動する中空軸モ−タからなる第1の駆動源48の図示しない回転子に連結されている。この第1の駆動源48は可動板49に取付けられている。この可動板49は上記ベ−ス7に垂設された固定板51に図示しないリニアガイドによって上下方向にスライド可能に設けられている。
【0033】
上記固定板51には第2の駆動源52が設けられている。この第2の駆動源52の駆動軸52aには図示しないボ−ルねじが連結されている。このボ−ルねじは上記可動板49に設けられた図示しないナット体に螺合されている。したがって、第2の駆動源52が作動してボ−ルねじが回転駆動されれば、上記可動板49が矢印で示す上下方向に駆動されることになる。
【0034】
つまり、上記上部ノズル体31は、第1の駆動源48によってカップ体1内に保持された基板Wの上方で、この基板Wの径方向に沿って揺動駆動されるとともに、第2の駆動源52によって上下方向に駆動され、所定の高さ位置で保持されるようになっている。
【0035】
上記ノズル装置31は、図2(a)〜(c)に示すようにノズル本体61を有する。このノズル本体61は塩化ビニールや弗素系の樹脂などの耐薬品性を有する合成樹脂によって成形されている。ノズル本体61を成形するとき、このノズル本体61内には導電性部材として互いに電気的に接続された多数の金属ワイヤ62が埋設される。そのうちの1本の金属ワイヤ62の一端部はノズル本体61の外部に導出されたアース部63となっている。このアース部63は、上記アーム体41を介してアースされる。
【0036】
上記ノズル本体61は柱状に形成されていて、その中途部には断面形状が矩形状の矩形部64が形成されている。この矩形部64の一側面64aには第1の供給部としての第1の接続孔65が開口形成されている。第1の接続孔65が形成された一側面65aに対向する他側面64bには第2の供給部としての第2の接続孔66が開口形成されている。さらに、上記ノズル本体32の上端面には第3の供給部としての第3の接続孔67が開口形成されている。
【0037】
上記第1乃至第3の接続孔65〜67は上記ノズル本体61の矩形部64の中心部に形成された混合室68に連通している。この混合室68には噴射部69の一端が連通している。この噴射部69の他端はノズル本体61の下端面に開口している。なお、噴射部69は、混合室68に連通した一端からノズル本体61の下端面に開口した他端にゆくにつれて漸次拡径する円錐形状をなしている。
【0038】
上記第1、第2の接続孔65,66には、図2(b)に鎖線で示す第1、第2の供給管71,72がそれぞれ一端部を接続して設けられる。第1の供給管71から上記混合室68にはたとえば純水などの希釈用流体が供給されるようになっている。
【0039】
上記第2の供給管72から上記混合室68には上記希釈用流体によって希釈される添加流体として、たとえばアンモニア水、塩酸、過酸化水素水、オゾン水などの液体、或いはオゾン、窒素、酸素、水素、二酸化炭素などの気体が供給されるようになっている。それによって、上記混合室68では上記希釈用流体と添加流体とが混合された処理液が作られる。
【0040】
上記第3の接続孔67には接続口体73が接続されている。この接続口体73には後端面に開口した接続部74が形成されている。この接続部74には、所定の圧力に加圧された窒素ガスやアルゴンガスなどの不活性ガスを上記混合室68に供給する第3の供給管75が接続されている。
【0041】
上記接続口体73の先端部には、上記混合室68内に位置するノズル部76が設けられている。このノズル部76は、外形寸法が上記混合室68の内径寸法よりもわずかに小さく形成されている。ノズル部76の外周面には周回溝77が形成され、先端には上記接続部74に連通するノズル孔78が開口形成されている.このノズル孔78からは上記噴射部69の一端に向かって加圧気体を噴射するようになっている。
【0042】
上記第1の供給管71と第2の供給管72とからは、希釈用流体と添加流体がそれぞれ上記混合室68内位置する上記ノズル部76外周面の上記周回溝77に向かって供給される。それによって、希釈用流体と添加流体とは混合室68で混合されて処理液となる。処理液は、混合室68に一端を接続した噴射部69に流れる。その際、処理液は上記ノズル孔78から噴射される加圧気体によって加圧されるため、粒子状となって上記噴射部69の先端から基板Wに向かって噴射するようになっている。
【0043】
上記構成の処理装置によれば、回転体12に保持された基板Wに処理液を供給するノズル装置31は、そのノズル本体61に希釈用流体を供給する第1の供給管71、添加流体を供給する第2の供給管75及び加圧気体を供給する第3の供給管75が接続されている。
【0044】
第1の供給管71から上記ノズル本体61の混合室68に供給された希釈用流体と、第2の供給管72から上記混合室68に供給された添加流体は、上記混合室で混合されて処理液となる。
【0045】
上記混合室68で作られた処理液は、第3の供給管75から供給されて接続口体73のノズル部76のノズル孔78から噴射される加圧気体によって加圧される。そのため、処理液は加圧気体の作用によって粒子状となって上記混合室68に一端を連通させた噴射部69の他端から基板Wの上面に向かって噴射されるから、基板Wの上面が処理液によって処理されることになる。
【0046】
すなわち、上記構成の処理装置によれば、希釈用流体と添加流体とをノズル装置31の混合室68で混合することができる。そのため、希釈用流体と添加流体とを予め混合して供給する従来のように、ノズル装置31の上流側に混合タンクを設けずにすむから、その分、コストの低減や構成の簡略化を図ることができる。
【0047】
上記混合室68で作られた処理液は加圧気体によって加圧されて噴射部69から噴射する。そのため、処理液は圧力が上昇し、しかも粒子状となって基板Wに作用するから、基板Wに対する処理効果を向上させることができる。しかも、処理液を加圧気体によって加圧するため、処理液を加圧して基板Wに供給する場合に比べて処理液の使用量を少なくすることができる。
【0048】
上記ノズル装置31のノズル本体61は、処理液に対する耐蝕性などを持たせるために、合成樹脂によって作られている。その場合、ノズル本体61内を処理液が流れることで、摩擦抵抗によって静電気が発生する。処理液の比抵抗値が高い場合、静電気が処理液に帯電してしまうため、基板Wに形成された回路パターンが静電気によって破壊される虞がある。
【0049】
しかしながら、この発明のノズル装置31は、合成樹脂製のノズル本体61に金属ワイヤ62を埋設し、その一部を外部に出してアース部63とし、そのアース部63をアーム体41を介してアースするようにした。そのため、処理液に静電気が帯電することがないから、処理液によって処理される基板Wが静電気によって損傷するのを防止することができる。
【0050】
【発明の効果】
以上のようにこの発明によれば、ノズル本体の混合室で添加流体を希釈用流体によって希釈して処理液を作り、この処理液を加圧気体で加圧して噴射部から噴射させるようにした。
【0051】
そのため、混合タンクを用いずに、添加流体と希釈流体とが混合されてなる処理液を作り、基板に向けて噴射することができるから、構成の簡略化やコストの低減などを図ることができる。
【図面の簡単な説明】
【図1】この発明の一実施の形態に係る処理装置の概略的構成を示す断面図。
【図2】(a)はノズル装置の側面図、(b)は縦断面図、(c)は平面図。
【符号の説明】
61…ノズル本体
62…金属ワイヤ(導電性部材)
65…第1の接続孔(第1の供給部)
66…第2の接続孔(第2の供給部)
67…第3の接続孔(第3の供給部)
68…混合室
69…噴射部
76…ノズル部
[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a processing apparatus for processing a substrate by spraying a processing liquid from a nozzle apparatus, and a processing liquid supply nozzle apparatus.
[0002]
[Prior art]
When manufacturing a semiconductor device or a liquid crystal display device, there is a lithography process for forming a circuit pattern on a substrate such as a semiconductor wafer or a glass substrate. In this lithography process, as is well known, a resist is applied to the substrate, and the resist is irradiated with light through a mask on which a circuit pattern is formed. The circuit pattern is formed on the substrate by repeating a series of steps such as removing the removed portion and etching the removed portion a plurality of times.
[0003]
In the above series of steps, if the substrate is contaminated, the circuit pattern cannot be precisely formed, which causes defective products. Therefore, when forming a circuit pattern in each step, the substrate is cleaned in a clean state in which fine particles such as resist and dust do not remain.
[0004]
When a substrate is subjected to cleaning or processing other than cleaning, different types of processing liquids are used depending on the processing purpose. As the processing liquid, a processing liquid in which an additional fluid is diluted with a diluting fluid, such as a processing liquid in which hydrofluoric acid is diluted with pure water or a processing liquid in which high-concentration ammonia gas is dissolved in pure water, is used. ing.
[0005]
On the other hand, when a substrate is treated with a treatment liquid, the treatment liquid is pressurized and jetted with a pressurized gas composed of an inert gas such as nitrogen gas. Thereby, the processing effect of the substrate is improved, and the amount of the processing liquid used is reduced.
[0006]
In the case of injecting the processing liquid by pressurizing with a pressurized gas, a nozzle device is used. This nozzle device has a pair of supply units to which the processing liquid and the pressurized gas are supplied. A processing liquid is supplied from one supply unit, and a pressurized gas is supplied from the other supply unit. Thereby, the processing liquid is pressurized by the pressurized gas and is jetted toward the substrate.
[0007]
The processing liquid to be supplied to the nozzle device is prepared by previously mixing an addition fluid and a diluting fluid to a predetermined concentration by a mixing tank, and is fed from the mixing tank to the nozzle device by pressure.
[0008]
[Problems to be solved by the invention]
However, when the processing fluid is prepared by previously mixing the additive fluid and the diluting fluid that constitute the processing liquid with a mixing tank, the mixing tank is installed upstream of the nozzle device, and the mixed processing is performed in the mixing tank. Liquid must be supplied to the nozzle device.
[0009]
Therefore, according to such a configuration, the mixing tank is indispensable, which leads to an increase in cost, and an installation place for the mixing tank must be secured. May be caused.
[0010]
The present invention relates to a substrate processing apparatus and a processing liquid supply nozzle apparatus which can pressurize and jet a processing liquid in which an additional fluid is diluted by a diluting fluid without using a mixing tank. Is to provide.
[0011]
[Means for Solving the Problems]
According to a first aspect of the present invention, there is provided a processing apparatus for processing a substrate with a processing liquid ejected from a nozzle device.
A nozzle body,
A mixing chamber provided in the nozzle body,
An injection unit provided in the nozzle body and communicating with the mixing chamber,
A first supply unit provided in the nozzle body for supplying a dilution fluid to the mixing chamber;
A second supply unit provided on the nozzle body for supplying an additional fluid diluted by the dilution fluid,
A third supply unit provided in the nozzle main body for supplying a pressurized gas to be injected from the injection unit by pressurizing a processing liquid produced by diluting the additional fluid with the dilution fluid in the mixing chamber; When,
A substrate processing apparatus comprising:
[0012]
The invention according to claim 2 is characterized in that the third supply section is provided with a connection port projecting into the mixing chamber and having a nozzle portion formed in the mixing chamber. In the processing apparatus for injecting the pressurized gas toward the processing liquid flowing in the injection section.
[0013]
According to a third aspect of the present invention, there is provided the substrate processing apparatus according to the first aspect, wherein the nozzle body is formed of a synthetic resin, and a groundable conductive member is embedded in the nozzle body.
[0014]
The invention according to claim 4 is a processing liquid supply nozzle device for supplying a processing liquid for processing a substrate,
A synthetic resin nozzle body provided with a supply unit to which the processing liquid is supplied and an injection unit from which the processing liquid is injected,
A conductive member provided in the nozzle body so as to be groundable,
And a nozzle device for supplying a processing liquid.
[0015]
According to the present invention, since the additive fluid is diluted with the diluting fluid in the mixing chamber of the nozzle body to produce the treatment liquid, the treatment liquid obtained by mixing the additive fluid and the diluent fluid is used without using the mixing tank. It can be injected under pressure.
[0016]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the drawings.
[0017]
FIG. 1 shows a spin-type processing apparatus according to an embodiment of the present invention. The processing apparatus has a cup 1. The cup body 1 includes a lower cup 3 provided on a bottom plate 2 of the processing tank (only the processing tank is shown as a bottom plate), and an upper cup provided on the upper side of the lower cup 3 so as to be vertically driven by a vertical driving mechanism (not shown). 4
[0018]
A through-hole 5 is formed in the center of the bottom wall of the lower cup 3 and the bottom plate 2 to penetrate them, and a peripheral wall 4a of the double structure of the upper cup 4 is formed in the peripheral wall 3a of the lower cup 3. Are slidably fitted, and form a labyrinth structure by these peripheral walls.
[0019]
The upper surface of the upper cup 4 is open, and when the upper cup 4 is driven in a downward direction, a substrate W such as a semiconductor wafer, for example, which has been subjected to processing such as cleaning in the cup body 1 as described later. Can be taken out by a robot (not shown) or an unprocessed substrate W can be supplied.
[0020]
One end of a plurality of discharge pipes 6 is connected to the bottom wall of the lower cup 3 at predetermined intervals in a circumferential direction, and the other end is connected to a suction pump (not shown). Thus, the processing liquid obtained by cleaning the substrate W and the cleaning liquid scattered from the substrate W during the drying processing after the cleaning processing are discharged through the discharge pipe 6.
[0021]
A base 7 is arranged below the bottom plate 2. A mounting hole 8 is formed in the base 7 at a position corresponding to the through hole 5 of the cup body 1. The upper end of the stator 9a of the pulse control motor 9 constituting the driving means is fitted and fixed in the mounting hole 8.
[0022]
The stator 9a has a cylindrical shape, and a cylindrical rotor 9b is rotatably fitted therein. A cylindrical connector 11 is integrally fixed to the upper end surface of the rotor 9b with its lower end surface joined. A flange 11a having a diameter larger than the inner diameter of the stator 9a is formed on the lower end surface of the connecting body 11. The flange 11a slidably contacts the upper end surface of the stator 9a, thereby restricting the rotor 9b from falling off the stator 9a without preventing the rotation of the rotor 9b. .
[0023]
The connecting body 11 protrudes inward from the through hole 5 of the cup body 1, and a disk-shaped rotating body 12 is attached and fixed to the upper end surface. A plurality of, in this embodiment, six holding members 13 (only two are shown) are rotatably provided at predetermined intervals in the circumferential direction at the periphery of the upper surface of the rotating body 12. On the upper surface of the holding member 13, a conical support pin 14 protrudes at the center, and an inverted tapered lock pin 15 is provided at a position eccentric from the center.
[0024]
The substrate W is supplied into the cup body 1 by a robot (not shown). The lower surface of the peripheral portion of the substrate W supplied into the cup body 1 is supported by the support pins 14. In this state, the holding member 13 rotates and the lock pin 15 rotates eccentrically, thereby engaging with the outer peripheral surface of the substrate W. Thereby, the substrate W is held by the rotating body 12.
[0025]
An urging spring 16 is provided on the outer peripheral surface of the connecting body 11. The urging spring 16 urges a parent gear (not shown) rotatably provided on the lower surface side of the rotating body 12 with respect to the rotating body 12 in a predetermined rotation direction. A child gear (not shown) meshes with the parent gear, and the child gear is provided at a lower end of the holding member 13 protruding from the lower surface side of the rotating body. Thus, the holding member 13 is urged by the urging spring 16 in the lock direction in which the lock pin 15 is engaged with the outer peripheral surface of the substrate W.
[0026]
The release of the locked state of the substrate W by the lock pin 15 is performed by a release mechanism 17. The release mechanism 17 includes a release cylinder 18, an arm 19 driven by the release cylinder 18, and a release pin 21 provided at an upper end of the arm 19.
[0027]
When the release cylinder 18 is actuated and the release pin 21 prevents the rotation of the parent gear, the rotating body 12 rotates by a predetermined angle against the urging force of the urging spring 16 by the pulse control motor 9. By being driven, the holding member 13 is rotated, and the locked state of the substrate W by the lock pin 15 is released.
[0028]
A through hole 12 a is formed in the center of the rotating body 12. A hollow fixed shaft 22 is passed through the rotor 9 b, and the upper end of the fixed shaft 22 is located in the through hole 12 a of the rotating body 12. A nozzle head 23 is provided at an upper end of the fixed shaft 22. The nozzle head 23 is provided with a plurality of lower nozzle bodies 24 for spraying a cleaning liquid toward the lower surface of the substrate W held by the rotating body 12.
[0029]
The upper surface of the rotating body 12 is covered with a turbulence prevention cover 29. The turbulence prevention cover 29 has an opening 29a for exposing the nozzle head 23 and an opening 29b for exposing the holding member 13. The upper surface of the turbulence prevention cover 29 is separated from the lower surface of the substrate W supported by the support pins 14 at a small interval, and turbulence occurs on the lower surface side of the substrate W as the rotating body 12 rotates. Is prevented.
[0030]
A nozzle device 31 is provided on the upper surface side of the substrate W held in the cup body 1 so as to be able to swing along the radial direction of the substrate W. A processing liquid is ejected from the nozzle device 31, and the upper surface of the substrate W is subjected to processing such as cleaning with the processing liquid.
[0031]
As shown in FIG. 1, the nozzle device 31 is formed at an end of the horizontal portion 43 of an arm 41 as a mounting member having a substantially inverted L-shape formed by a vertical portion 42 and a horizontal portion 43. Is attached to the mounting portion 43a with the axis inclined at a predetermined angle with respect to the vertical line.
[0032]
The vertical portion 42 of the arm body 41 is passed through an insertion hole 47 formed in the base 7 and comprises a hollow shaft motor for swinging and driving the arm body 41 within a predetermined angle. The first drive source 48 is connected to a rotor (not shown). The first drive source 48 is attached to a movable plate 49. The movable plate 49 is slidably provided in a vertical direction on a fixed plate 51 suspended from the base 7 by a linear guide (not shown).
[0033]
The fixed plate 51 is provided with a second drive source 52. A ball screw (not shown) is connected to the drive shaft 52a of the second drive source 52. The ball screw is screwed to a nut (not shown) provided on the movable plate 49. Therefore, when the second drive source 52 is operated to rotate the ball screw, the movable plate 49 is driven in the vertical direction indicated by the arrow.
[0034]
That is, the upper nozzle body 31 is oscillated along the radial direction of the substrate W above the substrate W held in the cup body 1 by the first driving source 48, and the second driving It is driven vertically by a source 52 and is held at a predetermined height position.
[0035]
The nozzle device 31 has a nozzle main body 61 as shown in FIGS. The nozzle main body 61 is formed of a synthetic resin having chemical resistance such as vinyl chloride or fluorine-based resin. When the nozzle body 61 is formed, a number of metal wires 62 that are electrically connected to each other as a conductive member are embedded in the nozzle body 61. One end of one of the metal wires 62 is a ground portion 63 led out of the nozzle body 61. This ground portion 63 is grounded via the arm body 41.
[0036]
The nozzle main body 61 is formed in a column shape, and a rectangular portion 64 having a rectangular cross section is formed in the middle of the nozzle main body 61. A first connection hole 65 as a first supply portion is formed in one side surface 64a of the rectangular portion 64. A second connection hole 66 as a second supply unit is formed on the other side surface 64b opposite to the one side surface 65a in which the first connection hole 65 is formed. Further, a third connection hole 67 as a third supply portion is formed in the upper end surface of the nozzle body 32.
[0037]
The first to third connection holes 65 to 67 communicate with a mixing chamber 68 formed at the center of the rectangular portion 64 of the nozzle body 61. One end of an injection section 69 communicates with the mixing chamber 68. The other end of the injection section 69 is open at the lower end surface of the nozzle body 61. The injection section 69 has a conical shape whose diameter gradually increases from one end communicating with the mixing chamber 68 to the other end opened to the lower end surface of the nozzle body 61.
[0038]
In the first and second connection holes 65 and 66, first and second supply pipes 71 and 72 indicated by chain lines in FIG. A diluting fluid such as pure water is supplied from the first supply pipe 71 to the mixing chamber 68.
[0039]
From the second supply pipe 72 to the mixing chamber 68, as an additional fluid diluted with the diluting fluid, for example, a liquid such as ammonia water, hydrochloric acid, hydrogen peroxide water, ozone water, or ozone, nitrogen, oxygen, Gases such as hydrogen and carbon dioxide are supplied. As a result, in the mixing chamber 68, a treatment liquid in which the dilution fluid and the addition fluid are mixed is produced.
[0040]
The connection port 73 is connected to the third connection hole 67. The connection port 73 has a connection portion 74 opened at the rear end surface. A third supply pipe 75 for supplying an inert gas such as nitrogen gas or argon gas pressurized to a predetermined pressure to the mixing chamber 68 is connected to the connection portion 74.
[0041]
A nozzle portion 76 located in the mixing chamber 68 is provided at the tip of the connection port 73. The outer dimensions of the nozzle 76 are slightly smaller than the inner diameter of the mixing chamber 68. A circumferential groove 77 is formed on the outer peripheral surface of the nozzle portion 76, and a nozzle hole 78 communicating with the connection portion 74 is formed at the tip end. Pressurized gas is injected from the nozzle hole 78 toward one end of the injection section 69.
[0042]
From the first supply pipe 71 and the second supply pipe 72, a diluting fluid and an additional fluid are respectively supplied toward the orbital groove 77 on the outer peripheral surface of the nozzle portion 76 located in the mixing chamber 68. . As a result, the dilution fluid and the additional fluid are mixed in the mixing chamber 68 to become a processing liquid. The processing liquid flows to the injection unit 69 having one end connected to the mixing chamber 68. At this time, since the processing liquid is pressurized by the pressurized gas injected from the nozzle hole 78, the processing liquid is formed into particles and injected from the tip of the injection unit 69 toward the substrate W.
[0043]
According to the processing apparatus having the above-described configuration, the nozzle device 31 that supplies the processing liquid to the substrate W held by the rotating body 12 includes the first supply pipe 71 that supplies the dilution fluid to the nozzle body 61, A second supply pipe 75 for supplying and a third supply pipe 75 for supplying pressurized gas are connected.
[0044]
The dilution fluid supplied from the first supply pipe 71 to the mixing chamber 68 of the nozzle body 61 and the additional fluid supplied from the second supply pipe 72 to the mixing chamber 68 are mixed in the mixing chamber. It becomes a processing solution.
[0045]
The processing liquid produced in the mixing chamber 68 is supplied from the third supply pipe 75 and is pressurized by the pressurized gas injected from the nozzle hole 78 of the nozzle 76 of the connection port 73. For this reason, the processing liquid is formed into particles by the action of the pressurized gas, and is injected toward the upper surface of the substrate W from the other end of the injection unit 69 having one end communicating with the mixing chamber 68. It will be processed by the processing liquid.
[0046]
That is, according to the processing apparatus having the above configuration, the dilution fluid and the additional fluid can be mixed in the mixing chamber 68 of the nozzle device 31. For this reason, unlike the related art in which the dilution fluid and the addition fluid are mixed and supplied in advance, there is no need to provide a mixing tank on the upstream side of the nozzle device 31, so that the cost is reduced and the configuration is simplified. be able to.
[0047]
The processing liquid created in the mixing chamber 68 is pressurized by the pressurized gas and is jetted from the jetting unit 69. Therefore, the pressure of the processing liquid increases, and the processing liquid acts on the substrate W in the form of particles, so that the processing effect on the substrate W can be improved. In addition, since the processing liquid is pressurized by the pressurized gas, the amount of the processing liquid used can be reduced as compared with the case where the processing liquid is pressurized and supplied to the substrate W.
[0048]
The nozzle main body 61 of the nozzle device 31 is made of a synthetic resin in order to impart corrosion resistance to the processing liquid. In this case, when the processing liquid flows in the nozzle body 61, static electricity is generated due to frictional resistance. When the specific resistance value of the processing liquid is high, static electricity is charged to the processing liquid, so that the circuit pattern formed on the substrate W may be destroyed by the static electricity.
[0049]
However, in the nozzle device 31 of the present invention, a metal wire 62 is buried in a synthetic resin nozzle main body 61, a part of which is brought out to the outside to form a ground portion 63, and the ground portion 63 is grounded via the arm body 41. I did it. Therefore, the processing liquid is not charged with static electricity, so that the substrate W processed by the processing liquid can be prevented from being damaged by the static electricity.
[0050]
【The invention's effect】
As described above, according to the present invention, a processing liquid is prepared by diluting an additional fluid with a diluting fluid in a mixing chamber of a nozzle body, and the processing liquid is pressurized with a pressurized gas and jetted from an injection unit. .
[0051]
Therefore, without using a mixing tank, a processing liquid in which an additive fluid and a diluent fluid are mixed can be prepared and sprayed toward the substrate, so that simplification of the configuration and reduction of cost can be achieved. .
[Brief description of the drawings]
FIG. 1 is a sectional view showing a schematic configuration of a processing apparatus according to an embodiment of the present invention.
2A is a side view of the nozzle device, FIG. 2B is a longitudinal sectional view, and FIG. 2C is a plan view.
[Explanation of symbols]
61: Nozzle body 62: Metal wire (conductive member)
65 first connection hole (first supply unit)
66... Second connection hole (second supply unit)
67... Third connection hole (third supply unit)
68 mixing chamber 69 injection section 76 nozzle section

Claims (4)

基板をノズル装置から噴射される処理液によって処理する処理装置において、
ノズル本体と、
このノズル本体に設けられた混合室と、
上記ノズル本体に設けられ上記混合室に連通した噴射部と、
上記ノズル本体に設けられ上記混合室に希釈用流体を供給するための第1の供給部と、
上記ノズル本体に設けられ上記希釈用流体によって希釈される添加流体を供給するための第2の供給部と、
上記ノズル本体に設けられ上記混合室で上記添加流体を上記希釈用流体で希釈して作られた上記処理液を加圧して上記噴射部から噴射させる加圧気体を供給するための第3の供給部と、
を具備したことを特徴とする基板の処理装置。
In a processing apparatus for processing a substrate with a processing liquid ejected from a nozzle device,
A nozzle body,
A mixing chamber provided in the nozzle body,
An injection unit provided in the nozzle body and communicating with the mixing chamber,
A first supply unit provided in the nozzle body for supplying a dilution fluid to the mixing chamber;
A second supply unit provided on the nozzle body for supplying an additional fluid diluted by the dilution fluid,
A third supply for supplying a pressurized gas that is provided in the nozzle body and that pressurizes the processing liquid produced by diluting the additive fluid with the diluting fluid in the mixing chamber and injecting the processing liquid from the injection unit. Department and
A substrate processing apparatus, comprising:
上記第3の供給部には上記混合室内に突出しこの混合室で混合されて上記噴射部に流れる処理液に向かって上記加圧気体を噴射するノズル部を有する接続口体が設けられていることを特徴とする請求項1記載の基板の処理装置。The third supply unit is provided with a connection port having a nozzle unit that projects into the mixing chamber and injects the pressurized gas toward the processing liquid mixed in the mixing chamber and flowing to the injection unit. The substrate processing apparatus according to claim 1, wherein: 上記ノズル本体は合成樹脂によって成形され、このノズル本体にはアース可能な導電性部材が埋め込まれていることを特徴とする請求項1記載の基板の処理装置。The substrate processing apparatus according to claim 1, wherein the nozzle body is formed of a synthetic resin, and a groundable conductive member is embedded in the nozzle body. 基板を処理するための処理液を供給する処理液供給用ノズル装置において、
処理液が供給される供給部及びその処理液が噴射される噴射部が設けられた合成樹脂製のノズル本体と、
このノズル本体にアース可能に設けられた導電性部材と、
を具備したことを特徴とする処理液供給用ノズル装置。
In a processing liquid supply nozzle device for supplying a processing liquid for processing a substrate,
A synthetic resin nozzle body provided with a supply unit to which the processing liquid is supplied and an injection unit from which the processing liquid is injected,
A conductive member provided in the nozzle body so as to be groundable,
A nozzle device for supplying a processing liquid, comprising:
JP2002173209A 2002-06-13 2002-06-13 Substrate processing equipment Expired - Fee Related JP4047635B2 (en)

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JP2002173209A JP4047635B2 (en) 2002-06-13 2002-06-13 Substrate processing equipment
KR1020030037003A KR100991128B1 (en) 2002-06-13 2003-06-10 Substrate Treatment Equipment
TW092115700A TWI308358B (en) 2002-06-13 2003-06-10 Nozzle equipment and substrate treatment equipment

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JP2007011031A (en) * 2005-06-30 2007-01-18 Optrex Corp Terminal cleaning device for display panel
GB2432119A (en) * 2005-11-10 2007-05-16 Biotech Internat Ltd Aqueous biocidal compositions comprising a nitrogen-containing biocide, a sulfur-containing biocide and an oleophilic carrier
KR101060686B1 (en) * 2009-12-22 2011-08-30 주식회사 케이씨텍 Substrate cleaning device with improved cleaning efficiency
TWI386986B (en) * 2006-10-13 2013-02-21 Dainippon Screen Mfg Nozzle and a substrate processing apparatus including the same
KR20170128188A (en) * 2017-11-10 2017-11-22 세메스 주식회사 Chemical nozzle and apparatus for treating substrate
KR101817212B1 (en) * 2016-04-29 2018-02-21 세메스 주식회사 Chemical nozzle and apparatus for treating substrate

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CN106252258B (en) 2015-06-15 2018-12-07 株式会社思可林集团 Substrate board treatment

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Publication number Priority date Publication date Assignee Title
JP2007011031A (en) * 2005-06-30 2007-01-18 Optrex Corp Terminal cleaning device for display panel
GB2432119A (en) * 2005-11-10 2007-05-16 Biotech Internat Ltd Aqueous biocidal compositions comprising a nitrogen-containing biocide, a sulfur-containing biocide and an oleophilic carrier
GB2432119B (en) * 2005-11-10 2011-03-23 Biotech Internat Ltd Improvements in and relating to biocidal compositions
TWI386986B (en) * 2006-10-13 2013-02-21 Dainippon Screen Mfg Nozzle and a substrate processing apparatus including the same
US9027577B2 (en) 2006-10-13 2015-05-12 SCREEN Holdings Co., Ltd. Nozzle and a substrate processing apparatus including the same
KR101060686B1 (en) * 2009-12-22 2011-08-30 주식회사 케이씨텍 Substrate cleaning device with improved cleaning efficiency
KR101817212B1 (en) * 2016-04-29 2018-02-21 세메스 주식회사 Chemical nozzle and apparatus for treating substrate
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KR20170128188A (en) * 2017-11-10 2017-11-22 세메스 주식회사 Chemical nozzle and apparatus for treating substrate
KR101884852B1 (en) * 2017-11-10 2018-08-02 세메스 주식회사 Chemical nozzle and apparatus for treating substrate

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KR20030096003A (en) 2003-12-24
KR100991128B1 (en) 2010-11-01

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