JP2004012510A5 - - Google Patents

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Publication number
JP2004012510A5
JP2004012510A5 JP2002161617A JP2002161617A JP2004012510A5 JP 2004012510 A5 JP2004012510 A5 JP 2004012510A5 JP 2002161617 A JP2002161617 A JP 2002161617A JP 2002161617 A JP2002161617 A JP 2002161617A JP 2004012510 A5 JP2004012510 A5 JP 2004012510A5
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JP
Japan
Prior art keywords
group
atom
hydrogen atom
bonded
organic
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JP2002161617A
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Japanese (ja)
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JP2004012510A (en
JP4073255B2 (en
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Publication date
Application filed filed Critical
Priority claimed from JP2002161617A external-priority patent/JP4073255B2/en
Priority to JP2002161617A priority Critical patent/JP4073255B2/en
Priority to KR1020030034881A priority patent/KR100955454B1/en
Priority to US10/448,041 priority patent/US6939662B2/en
Priority to EP10188667.9A priority patent/EP2278399B1/en
Priority to EP10188665A priority patent/EP2278397A3/en
Priority to EP10188668A priority patent/EP2278400A3/en
Priority to AT03012142T priority patent/ATE525676T1/en
Priority to EP03012142A priority patent/EP1367440B1/en
Priority to EP10188666A priority patent/EP2278398A3/en
Publication of JP2004012510A publication Critical patent/JP2004012510A/en
Publication of JP2004012510A5 publication Critical patent/JP2004012510A5/ja
Publication of JP4073255B2 publication Critical patent/JP4073255B2/en
Application granted granted Critical
Priority to KR1020090108795A priority patent/KR100947853B1/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Claims (2)

(A)下記一般式(Z)で表される基を少なくとも1つ有する繰り返し単位を少なくとも1種有する樹脂を含有することを特徴とするポジ型レジスト組成物。
Figure 2004012510
一般式(Z)に於いて、
Xは、ヘテロ原子を有する2価の連結基、−O−、−S−、−SO2−又は−NRa−を表す。式中、Raは、水素原子、アルキル基、アリール基又はアラルキル基を表す。
Lは、単結合又はアルキレン基、シクロアルキレン基、アリーレン基、これらの基を結合した基及びこれらの基とオキシ基及び/又はカルボニル基とを結合した基から選ばれる2価の連結基を表す。
1〜R6は、各々独立に、水素原子、ハロゲン原子又は有機基を表す。但し、R1〜R6の内の少なくとも1つは、フッ素原子又は少なくとも1つのフッ素原子を有する有機基を表す。
Rは、水素原子又は有機基を表す。
(A) A positive resist composition comprising a resin having at least one repeating unit having at least one group represented by the following general formula (Z).
Figure 2004012510
In general formula (Z),
X represents a divalent linking group having a hetero atom, —O—, —S—, —SO 2 — or —NR a —. In the formula, R a represents a hydrogen atom, an alkyl group, an aryl group or an aralkyl group.
L represents a single bond or a divalent linking group selected from an alkylene group, a cycloalkylene group, an arylene group, a group in which these groups are bonded, and a group in which these groups are bonded to an oxy group and / or a carbonyl group. .
R 1 to R 6 each independently represents a hydrogen atom, a halogen atom or an organic group. However, at least one of R 1 to R 6 represents a fluorine atom or an organic group having at least one fluorine atom.
R represents a hydrogen atom or an organic group.
請求項1に記載のポジ型レジスト組成物によりレジスト膜を形成し、当該レジスト膜を露光、現像することを特徴とするパターン形成方法。  A pattern forming method comprising: forming a resist film from the positive resist composition according to claim 1; and exposing and developing the resist film.
JP2002161617A 2002-05-31 2002-06-03 Positive resist composition Expired - Fee Related JP4073255B2 (en)

Priority Applications (10)

Application Number Priority Date Filing Date Title
JP2002161617A JP4073255B2 (en) 2002-06-03 2002-06-03 Positive resist composition
KR1020030034881A KR100955454B1 (en) 2002-05-31 2003-05-30 Positive-working resist composition
US10/448,041 US6939662B2 (en) 2002-05-31 2003-05-30 Positive-working resist composition
AT03012142T ATE525676T1 (en) 2002-05-31 2003-06-02 POSITIVE WORKING RESISTANT COMPOSITION
EP10188665A EP2278397A3 (en) 2002-05-31 2003-06-02 Positive-working resist composition
EP10188668A EP2278400A3 (en) 2002-05-31 2003-06-02 Positive-working resist composition
EP10188667.9A EP2278399B1 (en) 2002-05-31 2003-06-02 Positive-working resist composition
EP03012142A EP1367440B1 (en) 2002-05-31 2003-06-02 Positive-working resist composition
EP10188666A EP2278398A3 (en) 2002-05-31 2003-06-02 Positive-working resist composition
KR1020090108795A KR100947853B1 (en) 2002-05-31 2009-11-11 Positive-working resist composition and pattern forming method using thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002161617A JP4073255B2 (en) 2002-06-03 2002-06-03 Positive resist composition

Publications (3)

Publication Number Publication Date
JP2004012510A JP2004012510A (en) 2004-01-15
JP2004012510A5 true JP2004012510A5 (en) 2005-09-22
JP4073255B2 JP4073255B2 (en) 2008-04-09

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002161617A Expired - Fee Related JP4073255B2 (en) 2002-05-31 2002-06-03 Positive resist composition

Country Status (1)

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JP (1) JP4073255B2 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101729792B1 (en) 2009-02-23 2017-04-24 제이에스알 가부시끼가이샤 Compounds, fluorine-containing polymers, and radiation-sensitive resin compositions
JP5617810B2 (en) * 2011-10-04 2014-11-05 信越化学工業株式会社 Resist protective film material and pattern forming method
JP5825248B2 (en) 2012-12-12 2015-12-02 信越化学工業株式会社 Positive resist material and pattern forming method using the same
JP5825252B2 (en) * 2012-12-26 2015-12-02 信越化学工業株式会社 Resist material and pattern forming method using the same
JP5821862B2 (en) * 2013-01-29 2015-11-24 信越化学工業株式会社 Negative resist material and pattern forming method using the same
JP6065942B2 (en) * 2015-06-12 2017-01-25 信越化学工業株式会社 High molecular compound
JP7459636B2 (en) 2019-06-14 2024-04-02 Jsr株式会社 Radiation-sensitive resin composition and method for forming resist pattern

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