JP2004004524A5 - - Google Patents

Claims (16)

A substrate,
A thin film transistor formed on the substrate,
An insulating film formed before Symbol thin film transistor,
Before being formed on Kize' Enmaku, a first electrode connected said thin film transistor and electrically,
A bank formed to cover an edge of the first electrode and the insulating film;
A light emitting layer formed on the first electrode;
A second electrode formed on the bank and the light emitting layer;
The electro-optical device is characterized in that an end portion of the light emitting layer is formed in contact with a side surface of the bank . A substrate,
A thin film transistor formed on the substrate,
An insulating film formed before Symbol thin film transistor,
Before being formed on Kize' Enmaku, a first electrode connected said thin film transistor and electrically,
A bank formed to cover an edge of the first electrode and the insulating film;
A light emitting layer formed on the first electrode;
A second electrode formed on the bank and the light emitting layer;
The electro-optical device, wherein the second electrode is formed in contact with a part of a side surface and an upper end portion of the bank . A substrate,
A thin film transistor formed on the substrate,
An insulating film formed before Symbol thin film transistor,
Before being formed on Kize' Enmaku, a first electrode connected said thin film transistor and electrically,
A bank formed to cover an edge of the first electrode and the insulating film;
A light emitting layer formed on the first electrode;
A second electrode formed on the bank and the light emitting layer;
The electro-optical device , wherein the light emitting layer does not go over the bank . A substrate,
A thin film transistor formed on the substrate,
An insulating film formed before Symbol thin film transistor,
Before being formed on Kize' Enmaku, a first electrode connected said thin film transistor and electrically,
A resin film formed to cover the edge of the first electrode and the insulating film;
A first electrode and a second electrode formed on the resin film,
The first electrode has a first region and a second region;
The resin film and the second electrode are formed on the first region,
A light emitting layer and the second electrode are formed on the second region,
The resin film has an opening on the second region, and a side surface of the opening is located on a boundary between the first region and the second region,
An electro-optical device , wherein an end of the light emitting layer is in contact with a side surface of the opening . 5. The electro-optical device according to claim 4, wherein the second electrode is formed in contact with the resin film. 6. The electro-optical device according to claim 1, wherein a passivation film is formed on the second electrode. The electro-optical device according to claim 6, wherein a third electrode is formed between the second electrode and the passivation film. The electro-optical device according to claim 1, wherein the thin film transistor includes an island-shaped semiconductor film having two or more channel formation regions connected in series. A video camera, a digital camera, a goggle type display, a car navigation system, a personal computer, a mobile computer, a mobile phone, an electronic book, wherein the electro-optical device according to any one of claims 1 to 8 is used. An image playback device or a car audio provided with a recording medium. A thin film transistor is formed on the substrate,
Forming a first insulating film on the thin film transistor;
Forming a first electrode electrically connected to the thin film transistor on the first insulating film;
Forming a bank on the first insulating film so as to cover an edge of the first electrode;
A light emitting layer is formed by an inkjet method on the region of the first electrode that is not covered by the bank,
Forming a second electrode on the bank and the light emitting layer;
A method for manufacturing an electro-optical device, wherein a second insulating film is formed over the second electrode. The method for manufacturing an electro-optical device according to claim 10, wherein a silicon oxynitride film or a silicon nitride film is used as the first insulating film and the second insulating film. 12. The method for manufacturing an electro-optical device according to claim 10, wherein the light-emitting layer and the second electrode are continuously formed without being released to the atmosphere. 12. The method for manufacturing an electro-optical device according to claim 10, wherein the light-emitting layer, the second electrode, and the second insulating film are continuously formed without being released to the atmosphere. Form a base film on the substrate,
Forming a thin film transistor on the base film;
Forming a first passivation film on the thin film transistor;
Forming an insulating film on the first passivation film;
Forming a second passivation film on the insulating film;
Forming a first electrode electrically connected to the thin film transistor on the second passivation film;
Forming a bank on the second passivation film, covering an edge of the first electrode;
A light emitting layer is formed by an inkjet method on the region of the first electrode that is not covered by the bank,
Forming a second electrode on the bank and the light emitting layer;
Forming a third electrode on the second electrode;
A method for manufacturing an electro-optical device, wherein a third passivation film is formed on the third electrode. 15. The method for manufacturing an electro-optical device according to claim 14, wherein the light-emitting layer, the second electrode, and the third electrode are continuously formed without being released to the atmosphere. 15. The method for manufacturing an electro-optical device according to claim 14, wherein the light emitting layer, the second electrode, the third electrode, and the third passivation film are continuously formed without being released to the atmosphere.