JP2004004227A5 - - Google Patents

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Publication number
JP2004004227A5
JP2004004227A5 JP2002158822A JP2002158822A JP2004004227A5 JP 2004004227 A5 JP2004004227 A5 JP 2004004227A5 JP 2002158822 A JP2002158822 A JP 2002158822A JP 2002158822 A JP2002158822 A JP 2002158822A JP 2004004227 A5 JP2004004227 A5 JP 2004004227A5
Authority
JP
Japan
Prior art keywords
group
hydrogen atom
general formula
atom
acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2002158822A
Other languages
English (en)
Japanese (ja)
Other versions
JP4018454B2 (ja
JP2004004227A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2002158822A external-priority patent/JP4018454B2/ja
Priority to JP2002158822A priority Critical patent/JP4018454B2/ja
Priority to US10/448,041 priority patent/US6939662B2/en
Priority to KR1020030034881A priority patent/KR100955454B1/ko
Priority to EP03012142A priority patent/EP1367440B1/en
Priority to EP10188667.9A priority patent/EP2278399B1/en
Priority to EP10188665A priority patent/EP2278397A3/en
Priority to AT03012142T priority patent/ATE525676T1/de
Priority to EP10188666A priority patent/EP2278398A3/en
Priority to EP10188668A priority patent/EP2278400A3/en
Publication of JP2004004227A publication Critical patent/JP2004004227A/ja
Publication of JP2004004227A5 publication Critical patent/JP2004004227A5/ja
Publication of JP4018454B2 publication Critical patent/JP4018454B2/ja
Application granted granted Critical
Priority to KR1020090108795A priority patent/KR100947853B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2002158822A 2002-05-31 2002-05-31 ポジ型レジスト組成物 Expired - Fee Related JP4018454B2 (ja)

Priority Applications (10)

Application Number Priority Date Filing Date Title
JP2002158822A JP4018454B2 (ja) 2002-05-31 2002-05-31 ポジ型レジスト組成物
US10/448,041 US6939662B2 (en) 2002-05-31 2003-05-30 Positive-working resist composition
KR1020030034881A KR100955454B1 (ko) 2002-05-31 2003-05-30 포지티브 레지스트 조성물
AT03012142T ATE525676T1 (de) 2002-05-31 2003-06-02 Positiv arbeitende resistzusammensetzung
EP10188667.9A EP2278399B1 (en) 2002-05-31 2003-06-02 Positive-working resist composition
EP10188665A EP2278397A3 (en) 2002-05-31 2003-06-02 Positive-working resist composition
EP03012142A EP1367440B1 (en) 2002-05-31 2003-06-02 Positive-working resist composition
EP10188666A EP2278398A3 (en) 2002-05-31 2003-06-02 Positive-working resist composition
EP10188668A EP2278400A3 (en) 2002-05-31 2003-06-02 Positive-working resist composition
KR1020090108795A KR100947853B1 (ko) 2002-05-31 2009-11-11 포지티브 레지스트 조성물 및 이를 이용한 패턴형성방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002158822A JP4018454B2 (ja) 2002-05-31 2002-05-31 ポジ型レジスト組成物

Publications (3)

Publication Number Publication Date
JP2004004227A JP2004004227A (ja) 2004-01-08
JP2004004227A5 true JP2004004227A5 (US07494231-20090224-C00006.png) 2005-09-22
JP4018454B2 JP4018454B2 (ja) 2007-12-05

Family

ID=30428864

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002158822A Expired - Fee Related JP4018454B2 (ja) 2002-05-31 2002-05-31 ポジ型レジスト組成物

Country Status (1)

Country Link
JP (1) JP4018454B2 (US07494231-20090224-C00006.png)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005275283A (ja) 2004-03-26 2005-10-06 Fuji Photo Film Co Ltd 電子線、euv光又はx線用ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP4738803B2 (ja) * 2004-12-14 2011-08-03 東京応化工業株式会社 高分子化合物、ポジ型レジスト組成物、およびレジストパターン形成方法
WO2006129800A1 (ja) * 2005-06-03 2006-12-07 Daikin Industries, Ltd. パターン形成用表面処理剤
JP2008268920A (ja) * 2007-03-28 2008-11-06 Fujifilm Corp ポジ型レジスト組成物およびパターン形成方法
TWI485517B (zh) 2007-04-18 2015-05-21 Daikin Ind Ltd 撥液阻劑組成物
CN102333797B (zh) * 2009-02-23 2014-08-13 Jsr株式会社 化合物、含氟原子聚合物和放射线敏感性树脂组合物
JP5825248B2 (ja) * 2012-12-12 2015-12-02 信越化学工業株式会社 ポジ型レジスト材料並びにこれを用いたパターン形成方法
JP6065942B2 (ja) * 2015-06-12 2017-01-25 信越化学工業株式会社 高分子化合物
WO2017170167A1 (ja) * 2016-03-30 2017-10-05 東京応化工業株式会社 表面処理方法、及び表面処理液

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