JP2003529786A - 位相シフトマスクの製造における位相シフト領域形成時のアライメント決定方法 - Google Patents

位相シフトマスクの製造における位相シフト領域形成時のアライメント決定方法

Info

Publication number
JP2003529786A
JP2003529786A JP2001517216A JP2001517216A JP2003529786A JP 2003529786 A JP2003529786 A JP 2003529786A JP 2001517216 A JP2001517216 A JP 2001517216A JP 2001517216 A JP2001517216 A JP 2001517216A JP 2003529786 A JP2003529786 A JP 2003529786A
Authority
JP
Japan
Prior art keywords
alignment
phase shift
region
circuit
photoresist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001517216A
Other languages
English (en)
Japanese (ja)
Inventor
ジェイ．， ブレット ロルフソン，
Original Assignee
マイクロン テクノロジー， インク．
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by マイクロン テクノロジー， インク． filed Critical マイクロン テクノロジー， インク．
Publication of JP2003529786A publication Critical patent/JP2003529786A/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/29—Rim PSM or outrigger PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2001517216A 1999-08-02 2000-08-02 位相シフトマスクの製造における位相シフト領域形成時のアライメント決定方法 Pending JP2003529786A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/365,980 US6395432B1 (en) 1999-08-02 1999-08-02 Methods of determining processing alignment in the forming of phase shift regions
US09/365,980 1999-08-02
PCT/US2000/021152 WO2001013176A1 (en) 1999-08-02 2000-08-02 Methods of determining alignment in the forming of phase shift regions in the fabrication of a phase shift mask

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2005129680A Division JP2005258462A (ja) 1999-08-02 2005-04-27 位相シフトマスクの製造における位相シフト領域形成時のアライメント決

Publications (1)

Publication Number Publication Date
JP2003529786A true JP2003529786A (ja) 2003-10-07

Family

ID=23441200

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2001517216A Pending JP2003529786A (ja) 1999-08-02 2000-08-02 位相シフトマスクの製造における位相シフト領域形成時のアライメント決定方法
JP2005129680A Pending JP2005258462A (ja) 1999-08-02 2005-04-27 位相シフトマスクの製造における位相シフト領域形成時のアライメント決

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2005129680A Pending JP2005258462A (ja) 1999-08-02 2005-04-27 位相シフトマスクの製造における位相シフト領域形成時のアライメント決

Country Status (5)

Country Link
US (1) US6395432B1 (https=)
JP (2) JP2003529786A (https=)
KR (1) KR100469092B1 (https=)
AU (1) AU6398000A (https=)
WO (1) WO2001013176A1 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6569574B2 (en) * 1999-10-18 2003-05-27 Micron Technology, Inc. Methods of patterning radiation, methods of forming radiation-patterning tools, and radiation-patterning tools
US20030147077A1 (en) * 2002-02-05 2003-08-07 Infineon Technologies North America Corp. Mask alignment method
CN1301441C (zh) * 2002-11-15 2007-02-21 华邦电子股份有限公司 交错式相位位移掩膜
US7147974B2 (en) 2003-10-14 2006-12-12 Micron Technology, Inc. Methods for converting reticle configurations
US7563546B2 (en) * 2004-01-23 2009-07-21 International Business Machiens Corporation Process for creating phase edge structures in a phase shift mask
US20070031027A1 (en) * 2005-08-04 2007-02-08 Chipworks Inc. Method and system for vertically aligning tile images of an area of interest of an integrated circuit
US20080311485A1 (en) * 2007-06-12 2008-12-18 William Stanton Photomasks Used to Fabricate Integrated Circuitry, Finished-Construction Binary Photomasks Used to Fabricate Integrated Circuitry, Methods of Forming Photomasks, and Methods of Photolithographically Patterning Substrates
US7930657B2 (en) 2008-01-23 2011-04-19 Micron Technology, Inc. Methods of forming photomasks
US8846273B2 (en) 2012-06-04 2014-09-30 Micron Technology, Inc. Photomasks, methods of forming a photomask, and methods of photolithographically patterning a substrate
KR102246872B1 (ko) 2014-07-29 2021-04-30 삼성전자 주식회사 포커스 계측 마크를 포함하는 포토마스크, 포커스 모니터 패턴을 포함하는 계측용 기판 타겟, 노광 공정 계측 방법, 및 집적회로 소자의 제조 방법

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5194344A (en) 1991-03-26 1993-03-16 Micron Technology, Inc. Method of fabricating phase shift reticles including chemically mechanically planarizing
US5194346A (en) 1991-04-15 1993-03-16 Micron Technology, Inc. Method of fabricating phase shifting reticles with an accurate phase shift layer
US5194345A (en) 1991-05-14 1993-03-16 Micron Technology, Inc. Method of fabricating phase shift reticles
US5240796A (en) 1991-07-09 1993-08-31 Micron Technology, Inc. Method of fabricating a chromeless phase shift reticle
US5281500A (en) 1991-09-04 1994-01-25 Micron Technology, Inc. Method of preventing null formation in phase shifted photomasks
US5225035A (en) 1992-06-15 1993-07-06 Micron Technology, Inc. Method of fabricating a phase-shifting photolithographic mask reticle having identical light transmittance in all transparent regions
US5700602A (en) 1992-08-21 1997-12-23 Intel Corporation Method and apparatus for precision determination of phase-shift in a phase-shifted reticle
US5667918A (en) 1993-09-27 1997-09-16 Micron Technology, Inc. Method of lithography using reticle pattern blinders
US5376483A (en) 1993-10-07 1994-12-27 Micron Semiconductor, Inc. Method of making masks for phase shifting lithography
KR970010666B1 (ko) 1993-12-27 1997-06-30 현대전자산업 주식회사 반도체 소자의 패턴 중첩오차 측정방법
US5672450A (en) 1994-05-11 1997-09-30 Micron Technology, Inc. Method of phase shift mask fabrication comprising a tapered edge and phase conflict resolution
US5495959A (en) 1994-05-11 1996-03-05 Micron Technology, Inc. Method of making substractive rim phase shifting masks
US5468578A (en) 1994-09-26 1995-11-21 Micron Technology, Inc. Method of making masks for phase shifting lithography to avoid phase conflicts
US5766829A (en) 1995-05-30 1998-06-16 Micron Technology, Inc. Method of phase shift lithography
US5536606A (en) 1995-05-30 1996-07-16 Micron Technology, Inc. Method for making self-aligned rim phase shifting masks for sub-micron lithography
US5635315A (en) 1995-06-21 1997-06-03 Hoya Corporation Phase shift mask and phase shift mask blank
KR0172790B1 (ko) 1995-09-18 1999-03-20 김영환 위상반전 마스크 및 그 제조방법
KR0179164B1 (ko) 1995-09-25 1999-04-01 문정환 위상 반전 마스크의 제조방법
KR0164078B1 (ko) * 1995-12-29 1998-12-15 김주용 노광 에너지와 포커스를 모니터 하는 오버레이 마크
KR100215850B1 (ko) 1996-04-12 1999-08-16 구본준 하프톤 위상 반전 마스크 및_그제조방법
US5667919A (en) 1996-07-17 1997-09-16 Taiwan Semiconductor Manufacturing Company, Ltd. Attenuated phase shift mask and method of manufacture thereof
US5795688A (en) 1996-08-14 1998-08-18 Micron Technology, Inc. Process for detecting defects in photomasks through aerial image comparisons
KR100201040B1 (ko) 1996-08-26 1999-06-15 다니구찌 이찌로오; 기타오카 다카시 위상 쉬프트 마스크 및 그 제조 방법
US5932377A (en) * 1998-02-24 1999-08-03 International Business Machines Corporation Exact transmission balanced alternating phase-shifting mask for photolithography
US6042972A (en) 1998-06-17 2000-03-28 Siemens Aktiengesellschaft Phase shift mask having multiple alignment indications and method of manufacture

Also Published As

Publication number Publication date
JP2005258462A (ja) 2005-09-22
KR100469092B1 (ko) 2005-02-02
US6395432B1 (en) 2002-05-28
KR20030036124A (ko) 2003-05-09
AU6398000A (en) 2001-03-13
WO2001013176A1 (en) 2001-02-22

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