JP2003522296A - イオンビーム真空スパッタリング装置および方法 - Google Patents

イオンビーム真空スパッタリング装置および方法

Info

Publication number
JP2003522296A
JP2003522296A JP2001525747A JP2001525747A JP2003522296A JP 2003522296 A JP2003522296 A JP 2003522296A JP 2001525747 A JP2001525747 A JP 2001525747A JP 2001525747 A JP2001525747 A JP 2001525747A JP 2003522296 A JP2003522296 A JP 2003522296A
Authority
JP
Japan
Prior art keywords
accelerator grid
vacuum sputtering
substrate
target
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001525747A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003522296A5 (cg-RX-API-DMAC10.html
Inventor
マーヴィン、 ハワード デヴィス、
ゲアリー プラウドフット、
デヴィッド、 イアン、 チャールズ ピアーソン、
Original Assignee
ノルディコ リミテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ノルディコ リミテッド filed Critical ノルディコ リミテッド
Publication of JP2003522296A publication Critical patent/JP2003522296A/ja
Publication of JP2003522296A5 publication Critical patent/JP2003522296A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/31—Processing objects on a macro-scale
    • H01J2237/3142—Ion plating
    • H01J2237/3146—Ion beam bombardment sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electron Sources, Ion Sources (AREA)
JP2001525747A 1999-09-17 2000-09-18 イオンビーム真空スパッタリング装置および方法 Pending JP2003522296A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB9922110.3 1999-09-17
GBGB9922110.3A GB9922110D0 (en) 1999-09-17 1999-09-17 Ion beam vacuum sputtering apparatus and method
PCT/GB2000/003577 WO2001022470A1 (en) 1999-09-17 2000-09-18 Ion beam vacuum sputtering apparatus and method

Publications (2)

Publication Number Publication Date
JP2003522296A true JP2003522296A (ja) 2003-07-22
JP2003522296A5 JP2003522296A5 (cg-RX-API-DMAC10.html) 2007-11-01

Family

ID=10861175

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001525747A Pending JP2003522296A (ja) 1999-09-17 2000-09-18 イオンビーム真空スパッタリング装置および方法

Country Status (7)

Country Link
EP (1) EP1212777B1 (cg-RX-API-DMAC10.html)
JP (1) JP2003522296A (cg-RX-API-DMAC10.html)
AT (1) ATE363726T1 (cg-RX-API-DMAC10.html)
AU (1) AU7433800A (cg-RX-API-DMAC10.html)
DE (1) DE60035054T2 (cg-RX-API-DMAC10.html)
GB (1) GB9922110D0 (cg-RX-API-DMAC10.html)
WO (1) WO2001022470A1 (cg-RX-API-DMAC10.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102674395B1 (ko) * 2023-12-04 2024-06-12 주식회사 디에프텍 이온빔 소스를 이용하여 내플라즈마 특성 향상을 위한 코팅 방법

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4439169B2 (ja) * 2002-09-10 2010-03-24 株式会社アルバック 真空処理方法及び真空装置
WO2008009892A1 (en) 2006-07-20 2008-01-24 Aviza Technology Limited Plasma sources
JP5313893B2 (ja) 2006-07-20 2013-10-09 エスピーティーエス テクノロジーズ イーティー リミティド イオンデポジション装置
CN101490789B (zh) 2006-07-20 2011-04-13 阿维扎技术有限公司 离子源
GB0921791D0 (en) * 2009-12-14 2010-01-27 Aviza Technologies Ltd Ion beam source
US9097076B2 (en) 2013-02-07 2015-08-04 Weatherford Technology Holdings, Llc Hard surfacing non-metallic slip components for downhole tools
US9273527B2 (en) 2013-02-07 2016-03-01 Weatherford Technology Holdings, Llc Hard surfacing metallic slip components for downhole tools
CN113301704B (zh) * 2021-05-17 2023-08-22 中国科学院近代物理研究所 一种抑制差分系统充气气流效应的装置及方法
CN114381702B (zh) * 2021-12-31 2023-01-06 北京航空航天大学 一种新型高能离子束流产生方法
CN114302549B (zh) * 2021-12-31 2024-02-20 中山市博顿光电科技有限公司 射频离子源系统及射频离子源控制方法
EP4250335A1 (en) * 2022-03-25 2023-09-27 Impedans Ltd Apparatus for non-invasive sensing of radio-frequency current spectra flowing in a plasma processing chamber
KR20240043589A (ko) * 2022-09-27 2024-04-03 삼성전자주식회사 기판 처리 장치 및 그 장치를 이용한 기판 처리 방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07113173A (ja) * 1993-10-13 1995-05-02 Hitachi Ltd イオンビームスパッタ装置
JPH0967670A (ja) * 1995-08-25 1997-03-11 Nissin Electric Co Ltd イオンビームスパッタリング装置
JP2001502468A (ja) * 1996-10-24 2001-02-20 ノルディコ・リミテッド イオン銃

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0390692A3 (en) * 1989-03-29 1991-10-02 Terumo Kabushiki Kaisha Method of forming thin film, apparatus for forming thin film and sensor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07113173A (ja) * 1993-10-13 1995-05-02 Hitachi Ltd イオンビームスパッタ装置
JPH0967670A (ja) * 1995-08-25 1997-03-11 Nissin Electric Co Ltd イオンビームスパッタリング装置
JP2001502468A (ja) * 1996-10-24 2001-02-20 ノルディコ・リミテッド イオン銃

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102674395B1 (ko) * 2023-12-04 2024-06-12 주식회사 디에프텍 이온빔 소스를 이용하여 내플라즈마 특성 향상을 위한 코팅 방법

Also Published As

Publication number Publication date
DE60035054T2 (de) 2008-01-03
GB9922110D0 (en) 1999-11-17
AU7433800A (en) 2001-04-24
EP1212777A1 (en) 2002-06-12
ATE363726T1 (de) 2007-06-15
WO2001022470A1 (en) 2001-03-29
EP1212777B1 (en) 2007-05-30
DE60035054D1 (de) 2007-07-12

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