AU7433800A - Ion beam vacuum sputtering apparatus and method - Google Patents

Ion beam vacuum sputtering apparatus and method

Info

Publication number
AU7433800A
AU7433800A AU74338/00A AU7433800A AU7433800A AU 7433800 A AU7433800 A AU 7433800A AU 74338/00 A AU74338/00 A AU 74338/00A AU 7433800 A AU7433800 A AU 7433800A AU 7433800 A AU7433800 A AU 7433800A
Authority
AU
Australia
Prior art keywords
power
accelerator grid
control signal
power supply
grid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU74338/00A
Other languages
English (en)
Inventor
Mervyn Howard Davis
David Ian Charles Pearson
Gary Proudfoot
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nordiko Ltd
Original Assignee
Nordiko Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nordiko Ltd filed Critical Nordiko Ltd
Publication of AU7433800A publication Critical patent/AU7433800A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/31—Processing objects on a macro-scale
    • H01J2237/3142—Ion plating
    • H01J2237/3146—Ion beam bombardment sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electron Sources, Ion Sources (AREA)
AU74338/00A 1999-09-17 2000-09-18 Ion beam vacuum sputtering apparatus and method Abandoned AU7433800A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB9922110 1999-09-17
GBGB9922110.3A GB9922110D0 (en) 1999-09-17 1999-09-17 Ion beam vacuum sputtering apparatus and method
PCT/GB2000/003577 WO2001022470A1 (en) 1999-09-17 2000-09-18 Ion beam vacuum sputtering apparatus and method

Publications (1)

Publication Number Publication Date
AU7433800A true AU7433800A (en) 2001-04-24

Family

ID=10861175

Family Applications (1)

Application Number Title Priority Date Filing Date
AU74338/00A Abandoned AU7433800A (en) 1999-09-17 2000-09-18 Ion beam vacuum sputtering apparatus and method

Country Status (7)

Country Link
EP (1) EP1212777B1 (cg-RX-API-DMAC10.html)
JP (1) JP2003522296A (cg-RX-API-DMAC10.html)
AT (1) ATE363726T1 (cg-RX-API-DMAC10.html)
AU (1) AU7433800A (cg-RX-API-DMAC10.html)
DE (1) DE60035054T2 (cg-RX-API-DMAC10.html)
GB (1) GB9922110D0 (cg-RX-API-DMAC10.html)
WO (1) WO2001022470A1 (cg-RX-API-DMAC10.html)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4439169B2 (ja) * 2002-09-10 2010-03-24 株式会社アルバック 真空処理方法及び真空装置
WO2008009892A1 (en) 2006-07-20 2008-01-24 Aviza Technology Limited Plasma sources
JP5313893B2 (ja) 2006-07-20 2013-10-09 エスピーティーエス テクノロジーズ イーティー リミティド イオンデポジション装置
CN101490789B (zh) 2006-07-20 2011-04-13 阿维扎技术有限公司 离子源
GB0921791D0 (en) * 2009-12-14 2010-01-27 Aviza Technologies Ltd Ion beam source
US9097076B2 (en) 2013-02-07 2015-08-04 Weatherford Technology Holdings, Llc Hard surfacing non-metallic slip components for downhole tools
US9273527B2 (en) 2013-02-07 2016-03-01 Weatherford Technology Holdings, Llc Hard surfacing metallic slip components for downhole tools
CN113301704B (zh) * 2021-05-17 2023-08-22 中国科学院近代物理研究所 一种抑制差分系统充气气流效应的装置及方法
CN114381702B (zh) * 2021-12-31 2023-01-06 北京航空航天大学 一种新型高能离子束流产生方法
CN114302549B (zh) * 2021-12-31 2024-02-20 中山市博顿光电科技有限公司 射频离子源系统及射频离子源控制方法
EP4250335A1 (en) * 2022-03-25 2023-09-27 Impedans Ltd Apparatus for non-invasive sensing of radio-frequency current spectra flowing in a plasma processing chamber
KR20240043589A (ko) * 2022-09-27 2024-04-03 삼성전자주식회사 기판 처리 장치 및 그 장치를 이용한 기판 처리 방법
KR102674395B1 (ko) * 2023-12-04 2024-06-12 주식회사 디에프텍 이온빔 소스를 이용하여 내플라즈마 특성 향상을 위한 코팅 방법

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0390692A3 (en) * 1989-03-29 1991-10-02 Terumo Kabushiki Kaisha Method of forming thin film, apparatus for forming thin film and sensor
JPH07113173A (ja) * 1993-10-13 1995-05-02 Hitachi Ltd イオンビームスパッタ装置
JPH0967670A (ja) * 1995-08-25 1997-03-11 Nissin Electric Co Ltd イオンビームスパッタリング装置
GB9622127D0 (en) * 1996-10-24 1996-12-18 Nordiko Ltd Ion gun

Also Published As

Publication number Publication date
DE60035054T2 (de) 2008-01-03
GB9922110D0 (en) 1999-11-17
EP1212777A1 (en) 2002-06-12
ATE363726T1 (de) 2007-06-15
WO2001022470A1 (en) 2001-03-29
EP1212777B1 (en) 2007-05-30
DE60035054D1 (de) 2007-07-12
JP2003522296A (ja) 2003-07-22

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase
TH Corrigenda

Free format text: IN VOL 15, NO 27, PAGE(S) 5693-5698 UNDER THE HEADING APPLICATIONS LAPSED, REFUSED OR WITHDRAWN PLEASE DELETE ALL REFERENCE TO APPLICATION NO. 74261/00, 74262/00, 74338/00 AND 75166/00

MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase