JP2003518767A5 - - Google Patents

Download PDF

Info

Publication number
JP2003518767A5
JP2003518767A5 JP2001548425A JP2001548425A JP2003518767A5 JP 2003518767 A5 JP2003518767 A5 JP 2003518767A5 JP 2001548425 A JP2001548425 A JP 2001548425A JP 2001548425 A JP2001548425 A JP 2001548425A JP 2003518767 A5 JP2003518767 A5 JP 2003518767A5
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001548425A
Other versions
JP2003518767A (ja
Filing date
Publication date
Priority claimed from US09/474,399 external-priority patent/US6607991B1/en
Application filed filed Critical
Publication of JP2003518767A publication Critical patent/JP2003518767A/ja
Publication of JP2003518767A5 publication Critical patent/JP2003518767A5/ja
Pending legal-status Critical Current

Links

JP2001548425A 1999-12-29 2000-12-29 電子ビーム放射を利用してスピンオン誘電体被膜を硬化する方法 Pending JP2003518767A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/474,399 US6607991B1 (en) 1995-05-08 1999-12-29 Method for curing spin-on dielectric films utilizing electron beam radiation
US09/474,399 1999-12-29
PCT/US2000/035639 WO2001048805A1 (en) 1999-12-29 2000-12-29 Method for curing spin-on dielectric films utilizing electron beam radiation

Publications (2)

Publication Number Publication Date
JP2003518767A JP2003518767A (ja) 2003-06-10
JP2003518767A5 true JP2003518767A5 (ja) 2008-02-28

Family

ID=23883362

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001548425A Pending JP2003518767A (ja) 1999-12-29 2000-12-29 電子ビーム放射を利用してスピンオン誘電体被膜を硬化する方法

Country Status (4)

Country Link
US (1) US6607991B1 (ja)
JP (1) JP2003518767A (ja)
KR (1) KR100773305B1 (ja)
WO (1) WO2001048805A1 (ja)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6582777B1 (en) * 2000-02-17 2003-06-24 Applied Materials Inc. Electron beam modification of CVD deposited low dielectric constant materials
US7026634B2 (en) * 2001-06-28 2006-04-11 E-Beam & Light, Inc. Method and apparatus for forming optical materials and devices
US7253425B2 (en) * 2001-06-28 2007-08-07 E-Beam & Light, Inc. Method and apparatus for forming optical elements by inducing changes in the index of refraction by utilizing electron beam radiation
US20060011863A1 (en) * 2001-06-28 2006-01-19 E-Beam & Light, Inc. Electron beam method and apparatus for improved melt point temperatures and optical clarity of halogenated optical materials
US7546016B2 (en) * 2001-06-28 2009-06-09 E-Beam & Light, Inc. Optical elements formed by inducing changes in the index of refraction by utilizing electron beam radiation
US7372052B2 (en) * 2001-06-28 2008-05-13 C-Beam & Light, Inc. Electron beam method and apparatus for reducing or patterning the birefringence of halogenated optical materials
US6844272B2 (en) * 2002-03-01 2005-01-18 Euv Limited Liability Corporation Correction of localized shape errors on optical surfaces by altering the localized density of surface or near-surface layers
US7060330B2 (en) 2002-05-08 2006-06-13 Applied Materials, Inc. Method for forming ultra low k films using electron beam
US6936551B2 (en) 2002-05-08 2005-08-30 Applied Materials Inc. Methods and apparatus for E-beam treatment used to fabricate integrated circuit devices
US6831284B2 (en) * 2002-11-21 2004-12-14 Applied Materials, Inc. Large area source for uniform electron beam generation
JP4372442B2 (ja) * 2003-03-28 2009-11-25 東京エレクトロン株式会社 電子ビーム処理方法及び電子ビーム処理装置
US6878644B2 (en) * 2003-05-06 2005-04-12 Applied Materials, Inc. Multistep cure technique for spin-on-glass films
US6693050B1 (en) * 2003-05-06 2004-02-17 Applied Materials Inc. Gapfill process using a combination of spin-on-glass deposition and chemical vapor deposition techniques
KR100673884B1 (ko) * 2003-09-22 2007-01-25 주식회사 하이닉스반도체 습식 세정에 의한 어택을 방지할 수 있는 반도체 장치제조 방법
US7049606B2 (en) * 2003-10-30 2006-05-23 Applied Materials, Inc. Electron beam treatment apparatus
JP4160489B2 (ja) * 2003-10-31 2008-10-01 株式会社東芝 半導体装置の製造方法
US7049612B2 (en) * 2004-03-02 2006-05-23 Applied Materials Electron beam treatment apparatus
US20050224722A1 (en) * 2004-03-30 2005-10-13 Applied Materials, Inc. Method and apparatus for reducing charge density on a dielectric coated substrate after exposure to large area electron beam
US7611996B2 (en) * 2004-03-31 2009-11-03 Applied Materials, Inc. Multi-stage curing of low K nano-porous films
US20050227502A1 (en) * 2004-04-12 2005-10-13 Applied Materials, Inc. Method for forming an ultra low dielectric film by forming an organosilicon matrix and large porogens as a template for increased porosity
US7018941B2 (en) 2004-04-21 2006-03-28 Applied Materials, Inc. Post treatment of low k dielectric films
US7384693B2 (en) * 2004-04-28 2008-06-10 Intel Corporation Diamond-like carbon films with low dielectric constant and high mechanical strength
US8901268B2 (en) 2004-08-03 2014-12-02 Ahila Krishnamoorthy Compositions, layers and films for optoelectronic devices, methods of production and uses thereof
US7422776B2 (en) * 2004-08-24 2008-09-09 Applied Materials, Inc. Low temperature process to produce low-K dielectrics with low stress by plasma-enhanced chemical vapor deposition (PECVD)
US20070026690A1 (en) * 2004-11-05 2007-02-01 Yoo Woo S Selective frequency UV heating of films
US20060099827A1 (en) * 2004-11-05 2006-05-11 Yoo Woo S Photo-enhanced UV treatment of dielectric films
US7588803B2 (en) * 2005-02-01 2009-09-15 Applied Materials, Inc. Multi step ebeam process for modifying dielectric materials
JP2007019161A (ja) * 2005-07-06 2007-01-25 Dainippon Screen Mfg Co Ltd パターン形成方法及び被膜形成装置
US20070059922A1 (en) * 2005-09-13 2007-03-15 International Business Machines Corporation Post-etch removal of fluorocarbon-based residues from a hybrid dielectric structure
US7678586B2 (en) * 2005-12-08 2010-03-16 Chartered Semiconductor Manufacturing, Ltd. Structure and method to prevent charge damage from e-beam curing process
US7407736B2 (en) * 2006-01-31 2008-08-05 International Business Machines Corporation Methods of improving single layer resist patterning scheme
US7730516B2 (en) 2007-02-27 2010-06-01 Sony Corporation TV-centric system
KR100909757B1 (ko) * 2007-10-31 2009-07-29 주식회사 하이닉스반도체 반도체 소자의 층간절연막 형성 방법
US8557877B2 (en) 2009-06-10 2013-10-15 Honeywell International Inc. Anti-reflective coatings for optically transparent substrates
US8795952B2 (en) 2010-02-21 2014-08-05 Tokyo Electron Limited Line pattern collapse mitigation through gap-fill material application
US8864898B2 (en) 2011-05-31 2014-10-21 Honeywell International Inc. Coating formulations for optical elements
US9018108B2 (en) 2013-01-25 2015-04-28 Applied Materials, Inc. Low shrinkage dielectric films
JP6803842B2 (ja) 2015-04-13 2020-12-23 ハネウェル・インターナショナル・インコーポレーテッドＨｏｎｅｙｗｅｌｌ Ｉｎｔｅｒｎａｔｉｏｎａｌ Ｉｎｃ． オプトエレクトロニクス用途のためのポリシロキサン製剤及びコーティング
KR102511272B1 (ko) 2018-02-23 2023-03-16 삼성전자주식회사 노광 장치 및 이를 이용하는 반도체 장치의 제조 방법
WO2021034567A1 (en) 2019-08-16 2021-02-25 Tokyo Electron Limited Method and process for stochastic driven defectivity healing
CN116656050B (zh) * 2023-07-18 2023-10-20 河南华佳新材料技术有限公司 一种光伏用聚丙烯金属化膜及其制备方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4041190A (en) 1971-06-29 1977-08-09 Thomson-Csf Method for producing a silica mask on a semiconductor substrate
US4222792A (en) 1979-09-10 1980-09-16 International Business Machines Corporation Planar deep oxide isolation process utilizing resin glass and E-beam exposure
JPS5760330A (en) 1980-09-27 1982-04-12 Fujitsu Ltd Resin composition
US4596720A (en) 1985-10-03 1986-06-24 Dow Corning Corporation Radiation-curable organopolysiloxane coating composition
US5003178A (en) 1988-11-14 1991-03-26 Electron Vision Corporation Large-area uniform electron source
KR910008980B1 (ko) 1988-12-20 1991-10-26 현대전자산업 주식회사 자외선을 이용한 s.o.g 박막 경화 방법
US5119164A (en) 1989-07-25 1992-06-02 Advanced Micro Devices, Inc. Avoiding spin-on-glass cracking in high aspect ratio cavities
US5192715A (en) 1989-07-25 1993-03-09 Advanced Micro Devices, Inc. Process for avoiding spin-on-glass cracking in high aspect ratio cavities
US5024969A (en) 1990-02-23 1991-06-18 Reche John J Hybrid circuit structure fabrication methods using high energy electron beam curing
US5192697A (en) 1992-01-27 1993-03-09 Chartered Semiconductor Manufacturing Pte Ltd. SOG curing by ion implantation
US5468595A (en) 1993-01-29 1995-11-21 Electron Vision Corporation Method for three-dimensional control of solubility properties of resist layers
US5376586A (en) 1993-05-19 1994-12-27 Fujitsu Limited Method of curing thin films of organic dielectric material
MY113904A (en) 1995-05-08 2002-06-29 Electron Vision Corp Method for curing spin-on-glass film utilizing electron beam radiation
US6652922B1 (en) 1995-06-15 2003-11-25 Alliedsignal Inc. Electron-beam processed films for microelectronics structures
US5609925A (en) * 1995-12-04 1997-03-11 Dow Corning Corporation Curing hydrogen silsesquioxane resin with an electron beam
KR100238252B1 (ko) * 1996-09-13 2000-01-15 윤종용 Sog층 큐어링방법 및 이를 이용한 반도체장치의 절연막제조방법
US6080526A (en) 1997-03-24 2000-06-27 Alliedsignal Inc. Integration of low-k polymers into interlevel dielectrics using controlled electron-beam radiation
US6255232B1 (en) * 1999-02-11 2001-07-03 Taiwan Semiconductor Manufacturing Company Method for forming low dielectric constant spin-on-polymer (SOP) dielectric layer
JP3494081B2 (ja) * 1999-07-01 2004-02-03 Ｊｓｒ株式会社 低密度膜の製造方法、低密度膜、絶縁膜および半導体装置

Similar Documents

Publication Publication Date Title
BE2016C018I2 (ja)
BE2014C035I2 (ja)
BE2012C016I2 (ja)
BE2011C041I2 (ja)
BE2010C019I2 (ja)
BE2010C009I2 (ja)
BRPI0113085B8 (ja)
BY5768C1 (ja)
BRPI0003419A (ja)
CN300955183S (zh) 连接件
IN188847B (ja)
CN3134731S (ja)
CN3136619S (ja)
AU2000280388A8 (ja)
AU2000278560A8 (ja)
AU2000276780A8 (ja)
BY5592C1 (ja)
AU2000267632A8 (ja)
BY6855C1 (ja)
BY7030C1 (ja)
CL2006000179A1 (ja)
AU2000256695A8 (ja)
CN3134542S (ja)
AU2000240338A8 (ja)
CN3135488S (ja)