JP2003510235A - 冷却速度を制御することにより単結晶シリコンを成長させるチョクラルスキー法 - Google Patents
冷却速度を制御することにより単結晶シリコンを成長させるチョクラルスキー法Info
- Publication number
- JP2003510235A JP2003510235A JP2001525015A JP2001525015A JP2003510235A JP 2003510235 A JP2003510235 A JP 2003510235A JP 2001525015 A JP2001525015 A JP 2001525015A JP 2001525015 A JP2001525015 A JP 2001525015A JP 2003510235 A JP2003510235 A JP 2003510235A
- Authority
- JP
- Japan
- Prior art keywords
- region
- diameter portion
- axial length
- constant diameter
- ingot
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 112
- 238000001816 cooling Methods 0.000 title claims abstract description 68
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 57
- 230000007547 defect Effects 0.000 claims abstract description 268
- 230000006911 nucleation Effects 0.000 claims abstract description 94
- 238000010899 nucleation Methods 0.000 claims abstract description 94
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 85
- 229910052710 silicon Inorganic materials 0.000 claims description 85
- 239000010703 silicon Substances 0.000 claims description 85
- 230000002093 peripheral effect Effects 0.000 claims description 25
- 238000007711 solidification Methods 0.000 claims description 21
- 230000008023 solidification Effects 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 14
- 238000010791 quenching Methods 0.000 claims description 7
- 230000000171 quenching effect Effects 0.000 claims description 5
- 230000004323 axial length Effects 0.000 claims 48
- 238000007596 consolidation process Methods 0.000 abstract 1
- 239000013078 crystal Substances 0.000 description 63
- 235000012431 wafers Nutrition 0.000 description 62
- 230000002776 aggregation Effects 0.000 description 26
- 238000006243 chemical reaction Methods 0.000 description 24
- 238000005054 agglomeration Methods 0.000 description 21
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 18
- 229910052802 copper Inorganic materials 0.000 description 18
- 239000010949 copper Substances 0.000 description 18
- 238000010438 heat treatment Methods 0.000 description 18
- 230000008569 process Effects 0.000 description 17
- 230000015572 biosynthetic process Effects 0.000 description 14
- 239000012776 electronic material Substances 0.000 description 13
- 239000000155 melt Substances 0.000 description 12
- 238000013459 approach Methods 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 11
- 230000007423 decrease Effects 0.000 description 10
- 230000008859 change Effects 0.000 description 9
- 238000009826 distribution Methods 0.000 description 9
- 238000005530 etching Methods 0.000 description 9
- 239000007789 gas Substances 0.000 description 8
- 230000004048 modification Effects 0.000 description 8
- 238000012986 modification Methods 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 239000012535 impurity Substances 0.000 description 7
- 230000008018 melting Effects 0.000 description 7
- 238000002844 melting Methods 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 6
- 238000005121 nitriding Methods 0.000 description 6
- 230000004520 agglutination Effects 0.000 description 5
- 238000004220 aggregation Methods 0.000 description 5
- 230000003247 decreasing effect Effects 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000002829 reductive effect Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 4
- 230000036961 partial effect Effects 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000002826 coolant Substances 0.000 description 2
- 230000008030 elimination Effects 0.000 description 2
- 238000003379 elimination reaction Methods 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000002715 modification method Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- KMUONIBRACKNSN-UHFFFAOYSA-N potassium dichromate Chemical compound [K+].[K+].[O-][Cr](=O)(=O)O[Cr]([O-])(=O)=O KMUONIBRACKNSN-UHFFFAOYSA-N 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000003325 tomography Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000004971 IR microspectroscopy Methods 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- XTVVROIMIGLXTD-UHFFFAOYSA-N copper(II) nitrate Chemical compound [Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XTVVROIMIGLXTD-UHFFFAOYSA-N 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000002939 deleterious effect Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000008014 freezing Effects 0.000 description 1
- 238000007710 freezing Methods 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000000386 microscopy Methods 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- -1 nitrogen-containing compound Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 238000000790 scattering method Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000002893 slag Substances 0.000 description 1
- 238000010583 slow cooling Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/206—Controlling or regulating the thermal history of growing the ingot
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15572599P | 1999-09-23 | 1999-09-23 | |
| US60/155,725 | 1999-09-23 | ||
| PCT/US2000/025525 WO2001021861A1 (en) | 1999-09-23 | 2000-09-18 | Czochralski process for growing single crystal silicon by controlling the cooling rate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003510235A true JP2003510235A (ja) | 2003-03-18 |
| JP2003510235A5 JP2003510235A5 (enExample) | 2005-12-22 |
Family
ID=22556551
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001525015A Pending JP2003510235A (ja) | 1999-09-23 | 2000-09-18 | 冷却速度を制御することにより単結晶シリコンを成長させるチョクラルスキー法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20030196587A1 (enExample) |
| EP (1) | EP1222324B1 (enExample) |
| JP (1) | JP2003510235A (enExample) |
| KR (1) | KR100745311B1 (enExample) |
| DE (1) | DE60010496T2 (enExample) |
| TW (1) | TW571006B (enExample) |
| WO (1) | WO2001021861A1 (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6858307B2 (en) | 2000-11-03 | 2005-02-22 | Memc Electronic Materials, Inc. | Method for the production of low defect density silicon |
| US7105050B2 (en) | 2000-11-03 | 2006-09-12 | Memc Electronic Materials, Inc. | Method for the production of low defect density silicon |
| US20110263126A1 (en) | 2000-11-22 | 2011-10-27 | Sumco Corporation | Method for manufacturing a silicon wafer |
| DE10066124B4 (de) * | 2000-11-24 | 2007-12-13 | Mitsubishi Materials Silicon Corp. | Silicium-Wafer |
| US6846539B2 (en) * | 2001-01-26 | 2005-01-25 | Memc Electronic Materials, Inc. | Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faults |
| WO2004044276A1 (en) * | 2002-11-12 | 2004-05-27 | Memc Electronic Materials, Inc. | A crystal puller and method for growing a monocrystalline ingot |
| WO2005029547A2 (en) | 2003-09-16 | 2005-03-31 | The Trustees Of Columbia University In The City Of New York | Enhancing the width of polycrystalline grains with mask |
| US8216362B2 (en) | 2006-05-19 | 2012-07-10 | Memc Electronic Materials, Inc. | Controlling agglomerated point defect and oxygen cluster formation induced by the lateral surface of a silicon single crystal during CZ growth |
| ITTO20110335A1 (it) * | 2011-04-14 | 2012-10-15 | Consiglio Nazionale Ricerche | Procedimento di formazione di cristalli massivi, in particolare monocristalli di fluoruri drogati con ioni di terre rare |
| JP6716344B2 (ja) * | 2016-06-01 | 2020-07-01 | グローバルウェーハズ・ジャパン株式会社 | シリコンウェーハの熱処理方法 |
| CN113825862B (zh) | 2019-04-11 | 2024-12-10 | 环球晶圆股份有限公司 | 后段主体长度具有减小变形的锭的制备工艺 |
| CN113728129B (zh) | 2019-04-18 | 2024-09-03 | 环球晶圆股份有限公司 | 使用连续柴可斯基(czochralski)方法生长单晶硅锭的方法 |
| KR102872184B1 (ko) | 2019-09-13 | 2025-10-15 | 글로벌웨이퍼스 씨오., 엘티디. | 연속 쵸크랄스키 방법을 사용하여 질소 도핑된 단결정 실리콘 잉곳을 성장시키기 위한 방법들 및 이 방법에 의해 성장되는 단결정 실리콘 잉곳 |
| CN114182355B (zh) * | 2021-11-30 | 2023-03-28 | 徐州鑫晶半导体科技有限公司 | 消除间隙型缺陷B-swirl的方法、硅片及电子器件 |
| US20250293073A1 (en) | 2024-03-18 | 2025-09-18 | Globalwafers Co., Ltd. | Reclaimable donor substrates for use in preparing multiple silicon-on-insulator structures |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59232995A (ja) * | 1983-06-10 | 1984-12-27 | Sumitomo Electric Ind Ltd | 引上単結晶の冷却方法 |
| US4981549A (en) * | 1988-02-23 | 1991-01-01 | Mitsubishi Kinzoku Kabushiki Kaisha | Method and apparatus for growing silicon crystals |
| US5264189A (en) * | 1988-02-23 | 1993-11-23 | Mitsubishi Materials Corporation | Apparatus for growing silicon crystals |
| IT1280041B1 (it) * | 1993-12-16 | 1997-12-29 | Wacker Chemitronic | Procedimento per il tiraggio di un monocristallo di silicio |
| JP3285111B2 (ja) * | 1994-12-05 | 2002-05-27 | 信越半導体株式会社 | 結晶欠陥の少ないシリコン単結晶の製造方法 |
| JP3085146B2 (ja) * | 1995-05-31 | 2000-09-04 | 住友金属工業株式会社 | シリコン単結晶ウェーハおよびその製造方法 |
| JPH08337490A (ja) * | 1995-06-09 | 1996-12-24 | Shin Etsu Handotai Co Ltd | 結晶欠陥の少ないシリコン単結晶及びその製造方法 |
| JP3006669B2 (ja) * | 1995-06-20 | 2000-02-07 | 信越半導体株式会社 | 結晶欠陥の均一なシリコン単結晶の製造方法およびその製造装置 |
| US5840120A (en) * | 1996-01-22 | 1998-11-24 | Memc Electronic Materials, Inc. | Apparatus for controlling nucleation of oxygen precipitates in silicon crystals |
| US5676751A (en) * | 1996-01-22 | 1997-10-14 | Memc Electronic Materials, Inc. | Rapid cooling of CZ silicon crystal growth system |
| DE19637182A1 (de) * | 1996-09-12 | 1998-03-19 | Wacker Siltronic Halbleitermat | Verfahren zur Herstellung von Halbleiterscheiben aus Silicium mit geringer Defektdichte |
| JPH10152395A (ja) * | 1996-11-21 | 1998-06-09 | Komatsu Electron Metals Co Ltd | シリコン単結晶の製造方法 |
| US6045610A (en) * | 1997-02-13 | 2000-04-04 | Samsung Electronics Co., Ltd. | Methods of manufacturing monocrystalline silicon ingots and wafers by controlling pull rate profiles in a hot zone furnance |
| US5994761A (en) * | 1997-02-26 | 1999-11-30 | Memc Electronic Materials Spa | Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor |
| DE19711922A1 (de) * | 1997-03-21 | 1998-09-24 | Wacker Siltronic Halbleitermat | Vorrichtung und Verfahren zum Ziehen eines Einkristalls |
| SG105513A1 (en) * | 1997-04-09 | 2004-08-27 | Memc Electronics Materials Inc | Low defect density, ideal oxygen precipitating silicon |
| DE69806137T2 (de) * | 1997-04-09 | 2002-11-21 | Memc Electronic Materials, Inc. | Silizium mit niedriger defektdichte |
| JPH1179889A (ja) * | 1997-07-09 | 1999-03-23 | Shin Etsu Handotai Co Ltd | 結晶欠陥が少ないシリコン単結晶の製造方法、製造装置並びにこの方法、装置で製造されたシリコン単結晶とシリコンウエーハ |
| DE19983188T1 (de) * | 1998-05-01 | 2001-05-10 | Nippon Steel Corp | Siliziumhalbleitersubstrat und Verfahren zu dessen Herstellung |
| JPH11349393A (ja) * | 1998-06-03 | 1999-12-21 | Shin Etsu Handotai Co Ltd | シリコン単結晶ウエーハおよびシリコン単結晶ウエーハの製造方法 |
| US6077343A (en) * | 1998-06-04 | 2000-06-20 | Shin-Etsu Handotai Co., Ltd. | Silicon single crystal wafer having few defects wherein nitrogen is doped and a method for producing it |
| WO2000013209A2 (en) * | 1998-09-02 | 2000-03-09 | Memc Electronic Materials, Inc. | Thermally annealed silicon wafers having improved intrinsic gettering |
| KR100581305B1 (ko) * | 1998-09-02 | 2006-05-22 | 엠이엠씨 일렉트로닉 머티리얼즈 인코포레이티드 | 저결함 밀도 단결정 실리콘으로부터의 ｓｏｉ 구조체 |
| US6336968B1 (en) * | 1998-09-02 | 2002-01-08 | Memc Electronic Materials, Inc. | Non-oxygen precipitating czochralski silicon wafers |
| US6284384B1 (en) * | 1998-12-09 | 2001-09-04 | Memc Electronic Materials, Inc. | Epitaxial silicon wafer with intrinsic gettering |
| US6197111B1 (en) * | 1999-02-26 | 2001-03-06 | Memc Electronic Materials, Inc. | Heat shield assembly for crystal puller |
| US6376395B2 (en) * | 2000-01-11 | 2002-04-23 | Memc Electronic Materials, Inc. | Semiconductor wafer manufacturing process |
-
2000
- 2000-09-18 KR KR1020027003802A patent/KR100745311B1/ko not_active Expired - Fee Related
- 2000-09-18 JP JP2001525015A patent/JP2003510235A/ja active Pending
- 2000-09-18 DE DE60010496T patent/DE60010496T2/de not_active Expired - Lifetime
- 2000-09-18 EP EP00963572A patent/EP1222324B1/en not_active Expired - Lifetime
- 2000-09-18 WO PCT/US2000/025525 patent/WO2001021861A1/en not_active Ceased
- 2000-09-22 TW TW089119609A patent/TW571006B/zh not_active IP Right Cessation
-
2003
- 2003-05-06 US US10/430,483 patent/US20030196587A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| EP1222324A1 (en) | 2002-07-17 |
| DE60010496D1 (de) | 2004-06-09 |
| EP1222324B1 (en) | 2004-05-06 |
| DE60010496T2 (de) | 2005-04-07 |
| KR100745311B1 (ko) | 2007-08-01 |
| KR20020042689A (ko) | 2002-06-05 |
| TW571006B (en) | 2004-01-11 |
| US20030196587A1 (en) | 2003-10-23 |
| WO2001021861A1 (en) | 2001-03-29 |
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