JP2003347594A - Driver for semiconductor light emitting element - Google Patents

Driver for semiconductor light emitting element

Info

Publication number
JP2003347594A
JP2003347594A JP2002157885A JP2002157885A JP2003347594A JP 2003347594 A JP2003347594 A JP 2003347594A JP 2002157885 A JP2002157885 A JP 2002157885A JP 2002157885 A JP2002157885 A JP 2002157885A JP 2003347594 A JP2003347594 A JP 2003347594A
Authority
JP
Japan
Prior art keywords
light emitting
semiconductor light
emitting element
voltage
control signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002157885A
Other languages
Japanese (ja)
Inventor
Yoshikazu Nagashima
良和 長嶋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yazaki Corp
Original Assignee
Yazaki Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yazaki Corp filed Critical Yazaki Corp
Priority to JP2002157885A priority Critical patent/JP2003347594A/en
Publication of JP2003347594A publication Critical patent/JP2003347594A/en
Pending legal-status Critical Current

Links

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02BCLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B20/00Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
    • Y02B20/40Control techniques providing energy savings, e.g. smart controller or presence detection

Abstract

<P>PROBLEM TO BE SOLVED: To provide a driver for a semiconductor light emitting element in which high class feeling is enhanced visually when an outer light system device or an illuminator in a vehicle employing the semiconductor light emitting element as a light source is unlighted. <P>SOLUTION: The driver (10) for a semiconductor light emitting element comprises a control section (20) and a drive section (30). Upon receiving a designation signal (S10) for unlighting the semiconductor light emitting elements (LEDS1, LEDS2), the control section (20) provides the drive section (30) with a control signal (S20) for shortening the time of applying a voltage to the semiconductor light emitting elements and lengthening the time of not applying the voltage gradually every specified period while repeating application and non-application of the voltage to the semiconductor light emitting elements alternately for a specified time interval thus applying no voltage to the semiconductor light emitting elements at the end of the specified time interval. <P>COPYRIGHT: (C)2004,JPO

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、自動車等を含む種
々の車両に搭載される半導体発光素子用駆動装置に関
し、より詳細には、例えば、ストップランプ、テールラ
ンプ、ターンランプ、等の車両の外部灯火系装置や、例
えば、ルームランプ、マップランプ、フットランプ、等
の車両内照明装置に光源として用いられる半導体発光素
子を駆動するための半導体発光素子用駆動装置に関す
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a driving device for a semiconductor light emitting element mounted on various vehicles including an automobile and the like, and more particularly, for example, a stop lamp, a tail lamp, a turn lamp, etc. The present invention relates to a driving device for a semiconductor light emitting element for driving a semiconductor light emitting element used as a light source in a lighting system device, for example, a vehicle lighting device such as a room lamp, a map lamp, a foot lamp, and the like.

【0002】[0002]

【従来の技術】一般的な自動車用ストップランプには、
光源として、白熱バルブ(即ち、白熱電球)が用いられ
ている。このストップランプにおいて白熱バルブを点灯
および消灯させる駆動装置の一例を図2(A)および図
2(B)を参照して説明する。図2(A)に示されるよ
うに、駆動装置1では、CPU(即ち、Central
Processing Unit)2が、スイッチSW
1のON/OFF状態を示す指示信号S1に従って制御
信号S2を駆動部3に供給し、当該駆動部3が制御信号
S2に従って白熱バルブL1,L2への供給電圧Vbの
印加および非印加を実行する。尚、駆動部3は、スイッ
チングトランジスタTr1とリレーRE1を備えてい
る。
2. Description of the Related Art Generally, stop lamps for automobiles include:
An incandescent bulb (that is, an incandescent lamp) is used as a light source. An example of a drive device for turning on and off the incandescent bulb in this stop lamp will be described with reference to FIGS. 2A and 2B. As shown in FIG. 2A, in the driving device 1, the CPU (that is, Central)
Processing Unit 2 is a switch SW
A control signal S2 is supplied to the drive unit 3 in accordance with an instruction signal S1 indicating the ON / OFF state of No. 1 and the drive unit 3 executes application and non-application of the supply voltage Vb to the incandescent valves L1 and L2 in accordance with the control signal S2. . Note that the driving unit 3 includes a switching transistor Tr1 and a relay RE1.

【0003】図2(B)は、指示信号S1のパルス電圧
波形と制御信号S2のパルス電圧波形のタイミングチャ
ートである。図2(B)に示されるように、指示信号S
1がハイ(High)レベルになるとCPU2はハイ
(High)レベルの制御信号S2を出力し、そして指
示信号S1がロー(Low)レベルになるとCPU2は
ロー(Low)レベルの制御信号S2を出力する。
FIG. 2B is a timing chart of a pulse voltage waveform of the instruction signal S1 and a pulse voltage waveform of the control signal S2. As shown in FIG. 2B, the instruction signal S
When 1 goes high, the CPU 2 outputs a control signal S2 at a high level, and when the instruction signal S1 goes low, the CPU 2 outputs a control signal S2 at a low level. .

【0004】スイッチングトランジスタTr1のベース
端子(B)に印加される制御信号S2がハイレベルの場
合、スイッチングトランジスタTr1のコレクタ端子
(C)からエミッタ端子(E)に電流が流れる状態とな
り、電力供給線4から電流がリレーRE1の電磁コイル
MC1を流れるため、リレーRE1のスイッチRSW1
がON状態となる。よって、電力供給線4から白熱バル
ブL1,L2へ電力が供給されて白熱バルブL1,L2
が点灯する。
When the control signal S2 applied to the base terminal (B) of the switching transistor Tr1 is at a high level, a current flows from the collector terminal (C) of the switching transistor Tr1 to the emitter terminal (E), and the power supply line 4, the current flows through the electromagnetic coil MC1 of the relay RE1, so that the switch RSW1
Is turned on. Therefore, power is supplied from the power supply line 4 to the incandescent valves L1 and L2, and the incandescent valves L1 and L2
Lights up.

【0005】スイッチングトランジスタTr1のベース
端子(B)に印加される制御信号S2がハイレベルから
ローレベルに切り換わると、スイッチングトランジスタ
Tr1のコレクタ端子(C)とエミッタ端子(E)の間
には電流が流れなくなるので、リレーRE1のスイッチ
RSW1はOFF状態となり、白熱バルブL1,L2が
消灯する。
When the control signal S2 applied to the base terminal (B) of the switching transistor Tr1 switches from the high level to the low level, a current flows between the collector terminal (C) and the emitter terminal (E) of the switching transistor Tr1. Does not flow, the switch RSW1 of the relay RE1 is turned off, and the incandescent valves L1 and L2 are turned off.

【0006】ところで、近年、視認性の向上のために、
白熱バルブの代わりに、発光ダイオード(即ち、LED
(Light Emitting Diode))等の
半導体発光素子が車両の外部灯火系装置に光源として用
いられるようになってきた。
In recent years, in order to improve visibility,
Instead of an incandescent bulb, a light emitting diode (ie, LED
(Light Emitting Diode)) has been used as a light source in an external lighting system of a vehicle.

【0007】前述したストップランプにおいては、白熱
バルブが用いられているので、当該白熱バルブに電力が
供給されてから点灯に至るまでの点灯遅延時間に数10
ミリ秒(msec.)を要する。一方、白熱バルブの代
わりに、応答速度の早い発光ダイオードを当該ストップ
ランプに使用すれば、点灯遅延時間は1ミリ秒以下とな
り、従って、視認時間の短縮を実現できるので、安全性
の向上に大きく貢献できる。
In the stop lamp described above, since an incandescent bulb is used, the lighting delay time from the supply of power to the incandescent bulb to the lighting is several tens of seconds.
It takes milliseconds (msec.). On the other hand, if a light-emitting diode with a high response speed is used for the stop lamp instead of the incandescent bulb, the lighting delay time is 1 millisecond or less, and therefore, the visual recognition time can be shortened, which greatly improves safety. Can contribute.

【0008】[0008]

【発明が解決しようとする課題】しかしながら、発光ダ
イオードの使用により点灯遅延時間を短くできる反面、
発光ダイオードへの電力供給が断たれてから消灯に至る
までの消灯遅延時間も1ミリ秒以下に短縮されるため、
安全性には直接影響しない消灯時におけるストップラン
プの高級感が、白熱バルブを使用したときに比べて、視
覚上低くなったと言われている。これはストップランプ
に限らず、その他、例えば、テールランプ、ターンラン
プ、等を含む車両の外部灯火系装置、更には、例えば、
ルームランプ、マップランプ、フットランプ、等を含む
車両内照明装置に関しても、消灯遅延時間については白
熱バルブの方が発光ダイオードよりも長いため、白熱バ
ルブを光源として使用した方が視覚上好ましいと言われ
ている。即ち、白熱バルブが消灯時に発光ダイオードよ
りもゆっくりと発光をフェードアウトさせる点が優美と
言われている。
However, although the lighting delay time can be shortened by using a light emitting diode,
Since the turn-off delay time from turning off the power supply to the light emitting diode to turning off the light is also reduced to 1 millisecond or less,
It is said that the luxury of the stop lamp when turned off, which does not directly affect safety, is visually lower than when an incandescent bulb is used. This is not limited to stop lamps, and in addition, for example, tail lamps, turn lamps, external lighting systems of vehicles including, and the like, and further, for example,
For in-vehicle lighting devices including room lamps, map lamps, foot lamps, etc., it is said that using an incandescent bulb as a light source is visually more preferable because the incandescent bulb has a longer turn-off delay time than a light-emitting diode. Have been done. That is, it is said that the incandescent bulb fades out light emission more slowly than the light emitting diode when the light is turned off.

【0009】本発明は、前述した課題に鑑みてなされた
ものであり、その目的は、点灯時の立ち上がりが早い
(即ち、点灯遅延時間が短い)半導体発光素子の特性を
生かして視認時間の短縮を図れると共に、消灯時におい
ては半導体発光素子の発光を白熱バルブのようにゆっく
りとフェードアウトさせて、当該半導体発光素子が光源
として用いられる外部灯火系装置や車両内照明装置の高
級感を視覚的に向上させる半導体発光素子用駆動装置を
提供することにある。
SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems, and has as its object to reduce the visual recognition time by making use of the characteristics of a semiconductor light-emitting element that has a fast rise at the time of lighting (ie, has a short lighting delay time). In addition, when the light is turned off, the light emission of the semiconductor light emitting element is slowly faded out like an incandescent bulb, so that the sense of quality of an external lighting system or a vehicle interior lighting device in which the semiconductor light emitting element is used as a light source can be visually recognized. An object of the present invention is to provide a driving device for a semiconductor light emitting device which is improved.

【0010】[0010]

【課題を解決するための手段】前述した目的を達成する
ために、本発明の半導体発光素子用駆動装置は、請求項
1に記載したように、半導体発光素子の点灯および消灯
を指示するための指示信号に応じて制御信号を出力する
制御部と、前記制御信号に従って前記半導体発光素子へ
の電力供給を行なう駆動部と、を備え、前記制御部が、
前記半導体発光素子の点灯を指示する指示信号を受けた
際に、前記駆動部に前記半導体発光素子へ電圧を印加さ
せる制御信号を出力し、そして、前記制御部が、前記半
導体発光素子の消灯を指示する指示信号を受けた際に、
前記駆動部に、所定の期間、前記半導体発光素子への電
圧の印加および非印加を交互に繰り返し行なわせ且つ、
一定周期毎に徐々に前記半導体発光素子への電圧の印加
時間を短く且つ電圧の非印加時間を長くさせ、そして前
記所定の期間の終了時に前記半導体発光素子への電圧の
非印加を行なわせる制御信号を出力し、それにより前記
半導体発光素子を徐々に消灯させることを特徴としてい
る。
In order to achieve the above-mentioned object, a driving apparatus for a semiconductor light-emitting device according to the present invention is provided with an instruction for turning on and off a semiconductor light-emitting device. A control unit that outputs a control signal in response to the instruction signal, and a driving unit that supplies power to the semiconductor light emitting element according to the control signal, the control unit includes:
Upon receiving an instruction signal for instructing lighting of the semiconductor light emitting element, the drive section outputs a control signal for applying a voltage to the semiconductor light emitting element, and the control section turns off the semiconductor light emitting element. When receiving an instruction signal to instruct,
The driving unit, for a predetermined period, the application and non-application of the voltage to the semiconductor light emitting element is alternately and repeatedly performed,
Control for gradually shortening the voltage application time to the semiconductor light emitting element and increasing the voltage non-application time for each fixed period, and performing non-voltage application to the semiconductor light emitting element at the end of the predetermined period Outputting a signal, thereby gradually turning off the semiconductor light emitting element.

【0011】請求項1に記載の発明によれば、半導体発
光素子用駆動装置の制御部が、半導体発光素子の消灯を
指示する指示信号を受けた際に、駆動部に、所定の期
間、半導体発光素子への電圧の印加および非印加を交互
に繰り返し行なわせ且つ、一定周期毎に徐々に半導体発
光素子への電圧の印加時間を短く且つ電圧の非印加時間
を長くさせ、そして当該所定の期間の終了時に半導体発
光素子への電圧の非印加を行なわせる制御信号を出力す
る。それ故、本発明の半導体発光素子用駆動装置は、点
灯遅延時間ならびに消灯遅延時間が白熱バルブよりも短
い半導体発光素子の駆動に効果的である。即ち、本発明
の半導体発光素子用駆動装置は、半導体発光素子の消灯
を指示する指示信号を制御部が受けた際に、半導体発光
素子を即時に消灯させず、白熱バルブのようにゆっくり
と半導体発光素子の発光をフェードアウトさせることが
できるので、点灯遅延時間が短い半導体発光素子の特性
を生かしつつ、当該半導体発光素子が用いられる車両の
外部灯火系装置や車両内照明装置の消灯時における優美
さを白熱バルブが用いられたときと視覚上同様にするこ
とができる。
According to the first aspect of the present invention, when the control unit of the semiconductor light emitting element driving device receives the instruction signal for instructing the semiconductor light emitting element to be turned off, the control unit instructs the driving unit to transmit the semiconductor light for a predetermined period. The voltage application and non-application to the light emitting element are alternately and repeatedly performed, and the voltage application time to the semiconductor light emitting element is gradually shortened and the voltage non-application time is lengthened gradually at regular intervals, and the predetermined period is set. At the end of the process, a control signal for causing no voltage to be applied to the semiconductor light emitting element is output. Therefore, the driving device for a semiconductor light emitting device of the present invention is effective in driving a semiconductor light emitting device in which the lighting delay time and the lighting delay time are shorter than that of the incandescent bulb. That is, when the control unit receives an instruction signal for instructing to turn off the semiconductor light emitting element, the semiconductor light emitting element driving device of the present invention does not immediately turn off the semiconductor light emitting element, and slowly turns off the semiconductor light like an incandescent bulb. Since the light emission of the light emitting element can be faded out, while utilizing the characteristics of the semiconductor light emitting element having a short lighting delay time, the elegance at the time of turning off the external lighting system of the vehicle or the lighting device in the vehicle using the semiconductor light emitting element is used. Can be visually similar to when an incandescent bulb is used.

【0012】また、本発明の半導体発光素子用駆動装置
は、請求項2に記載したように、前記所定の期間が、短
くとも50ミリ秒であることを特徴としている。
Further, in the driving device for a semiconductor light emitting device according to the present invention, the predetermined period is at least 50 milliseconds.

【0013】請求項2に記載の発明によれば、駆動部が
半導体発光素子の消灯を指示する指示信号を受けたとき
から半導体発光素子を消灯させるまでの所定の期間を短
くとも50ミリ秒に設定しているので、当該半導体発光
素子が用いられる車両の外部灯火系装置や車両内照明装
置の消灯時における高級感を損ねない。
According to the second aspect of the present invention, the predetermined period from when the driving unit receives the instruction signal for instructing to turn off the semiconductor light emitting element to when the semiconductor light emitting element is turned off is reduced to at least 50 milliseconds. Since the setting is made, the sense of quality at the time of turning off the external lighting system of the vehicle or the lighting device in the vehicle using the semiconductor light emitting element is not impaired.

【0014】また、本発明の半導体発光素子用駆動装置
は、請求項3に記載したように、前記所定の期間が、5
0ミリ秒から200ミリ秒の間で設定されることを特徴
としている。
According to a third aspect of the present invention, in the driving device for a semiconductor light emitting device, the predetermined period is set to 5 or less.
It is characterized in that it is set between 0 ms and 200 ms.

【0015】請求項3に記載の発明によれば、駆動部が
半導体発光素子の消灯を指示する指示信号を受けたとき
から半導体発光素子を消灯させるまでの所定の期間を5
0ミリ秒から200ミリ秒の間に設定しているので、当
該半導体発光素子が用いられる車両の外部灯火系装置や
車両内照明装置の消灯時における高級感を損ねること無
く、また、消灯遅延時間が長すぎるといった違和感も無
くすことができる。
According to the third aspect of the present invention, the predetermined period from the time when the driving section receives the instruction signal for instructing to turn off the semiconductor light emitting element to the time when the semiconductor light emitting element is turned off is set to 5 times.
Since it is set between 0 and 200 milliseconds, it does not impair the sense of quality when turning off the external lighting system of the vehicle or the lighting device in the vehicle, in which the semiconductor light emitting device is used. The feeling of discomfort such as too long can be eliminated.

【0016】また、本発明の半導体発光素子用駆動装置
は、請求項4に記載したように、前記駆動部に前記半導
体発光素子への電圧の印加および非印加を交互に繰り返
し行なわせる際の前記制御信号のパルス周期が、長くと
も10ミリ秒であることを特徴としている。
According to a fourth aspect of the present invention, there is provided a driving device for a semiconductor light emitting device, wherein the driving unit causes the driving unit to alternately repeat application and non-application of a voltage to the semiconductor light emitting device. The pulse period of the control signal is at most 10 milliseconds.

【0017】請求項4に記載の発明によれば、駆動部に
半導体発光素子への電圧の印加および非印加を交互に繰
り返し行なわせる際の制御信号のパルス周期を長くとも
10ミリ秒に設定しているので、調光時(即ち、発光の
フェードアウト時)における半導体発光素子の発光のチ
ラツキ感(即ち、フリッカ)を抑制することができる。
According to the fourth aspect of the present invention, the pulse period of the control signal for causing the drive section to alternately repeat the application and non-application of the voltage to the semiconductor light emitting element is set to at most 10 milliseconds. Therefore, it is possible to suppress the flicker of light emitted from the semiconductor light emitting element (ie, flicker) at the time of dimming (ie, at the time of fade-out of light emission).

【0018】また、本発明の半導体発光素子用駆動装置
は、請求項5に記載したように、前記駆動部に前記半導
体発光素子への電圧の印加および非印加を交互に繰り返
し行なわせる際の前記制御信号のパルス周期が、10ミ
リ秒から1ミリ秒の間で設定されることを特徴としてい
る。
According to a fifth aspect of the present invention, there is provided a driving device for a semiconductor light emitting device according to claim 5, wherein the driving unit alternately repeats application and non-application of a voltage to the semiconductor light emitting device. The pulse period of the control signal is set between 10 milliseconds and 1 millisecond.

【0019】請求項5に記載の発明によれば、駆動部に
半導体発光素子への電圧の印加および非印加を交互に繰
り返し行なわせる際の制御信号のパルス周期を10ミリ
秒から1ミリ秒の間に設定しているので、調光時(即
ち、発光のフェードアウト時)における半導体発光素子
の発光のチラツキ感(即ち、フリッカ)を抑制すること
ができるだけでなく、制御信号による高速スイッチング
に対する駆動部の追従安定性を確保することができる。
According to the fifth aspect of the present invention, the pulse period of the control signal for causing the drive unit to alternately repeat the application and non-application of the voltage to the semiconductor light emitting element is set to 10 milliseconds to 1 millisecond. Since it is set in the middle, it is possible not only to suppress the flicker of light emission of the semiconductor light emitting element (ie, flicker) at the time of dimming (ie, at the time of fade-out of light emission), but also to realize a drive unit for high-speed switching by a control signal. Tracking stability can be secured.

【0020】以上、本発明について簡潔に説明した。更
に、以下に説明される発明の実施の形態を添付の図面を
参照して通読することにより、本発明の詳細は更に明確
化されるであろう。
The present invention has been briefly described above. Further, details of the present invention will be further clarified by reading the embodiments of the invention described below with reference to the accompanying drawings.

【0021】[0021]

【発明の実施の形態】以下、本発明に係る好適な実施形
態を図面に基づき詳細に説明する。図1(A)は、半導
体発光素子を駆動するための本発明の半導体発光素子用
駆動装置の回路構成を示す図、そして図1(B)は図1
(A)の指示信号S10のパルス電圧波形と制御信号S
20のパルス電圧波形のタイミングチャートである。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments according to the present invention will be described below in detail with reference to the drawings. FIG. 1A is a diagram showing a circuit configuration of a driving device for a semiconductor light emitting device of the present invention for driving a semiconductor light emitting device, and FIG.
(A) The pulse voltage waveform of the instruction signal S10 and the control signal S
20 is a timing chart of 20 pulse voltage waveforms.

【0022】尚、図1(A)では、本発明の半導体発光
素子用駆動装置10により駆動される半導体発光素子の
一例として、素子駆動線50とグランドGとの間に電流
制限抵抗R1,R2を介して並列に電気的に接続された
複数の発光ダイオードLEDS1(LEDa,LED
b,LEDc),LEDS2(LEDd,LEDe,L
EDf)が示されているが、半導体発光素子の数は、複
数とは限らず、一つでもよい。即ち、半導体発光素子の
数は用途や仕様に応じて適宜決定される。例えば発光ダ
イオードを一つ用いる場合は、素子駆動線50とグラン
ドGの間に当該発光ダイオードを電流制限抵抗を介して
電気的に接続すればよい。
In FIG. 1A, as an example of a semiconductor light emitting device driven by the semiconductor light emitting device driving device 10 of the present invention, current limiting resistors R1 and R2 are provided between an element driving line 50 and a ground G. A plurality of light emitting diodes LEDS1 (LEDa, LEDa) electrically connected in parallel through
b, LEDc), LEDs2 (LEDd, LEDe, L
Although EDf) is shown, the number of semiconductor light emitting elements is not limited to a plurality but may be one. That is, the number of the semiconductor light emitting elements is appropriately determined according to the application and the specification. For example, when one light emitting diode is used, the light emitting diode may be electrically connected between the element drive line 50 and the ground G via a current limiting resistor.

【0023】また、電流制限抵抗(図1(A)では電流
制限抵抗R1,R2)は、半導体発光素子(図1(A)
では発光ダイオードLEDS1,LEDS2)へ流れる
電流を制限するための抵抗であるが、使用される半導体
発光素子に応じて設けなくともよい。勿論、電流制限抵
抗内蔵の半導体発光素子を使用する場合に、電流制限抵
抗が不要であることは言うまでもない。
The current limiting resistors (the current limiting resistors R1 and R2 in FIG. 1A) are connected to the semiconductor light emitting device (FIG. 1A).
Is a resistor for limiting the current flowing to the light emitting diodes LEDS1 and LEDS2), but may not be provided depending on the semiconductor light emitting element used. Of course, when using a semiconductor light emitting element with a built-in current limiting resistor, it goes without saying that no current limiting resistor is required.

【0024】半導体発光素子用駆動装置10は、発光ダ
イオードLEDS1,LEDS2への電力供給を制御
し、それによって発光ダイオードLEDS1,LEDS
2の発光(即ち、点灯および消灯)を制御する。この半
導体発光素子用駆動装置10には、発光ダイオードLE
DS1,LEDS2へ電力の供給を行ない、該発光ダイ
オードLEDS1,LEDS2を駆動する駆動部30
と、当該駆動部30による発光ダイオードLEDS1,
LEDS2への電力供給を制御する制御部20と、が設
けられている。
The semiconductor light emitting device driving device 10 controls the power supply to the light emitting diodes LEDS1 and LEDS2, thereby controlling the light emitting diodes LEDS1 and LEDS2.
2 (i.e., turn on and off). The driving device 10 for a semiconductor light emitting element includes a light emitting diode LE.
A driving unit 30 that supplies power to DS1 and LEDs2 and drives the light emitting diodes LEDs1 and LEDs2.
And the light emitting diodes LEDS1,
And a control unit 20 for controlling power supply to the LEDS2.

【0025】制御部20は駆動部30と電気的に接続さ
れている。当該制御部20は、発光ダイオードLEDS
1,LEDS2を点灯および消灯するためのスイッチS
W10のON/OFF状態を示す指示信号S10に応じ
て制御信号S20を出力し、当該制御信号S20を駆動
部30に供給して当該駆動部30の動作を制御するコン
トローラとして働く。この制御部20は、例えばCPU
等の半導体集積回路により構成でき、指示信号S10の
入力に対して制御信号S20を出力する処理回路を内蔵
している。
The control section 20 is electrically connected to the drive section 30. The control unit 20 includes a light emitting diode LEDS
1, a switch S for turning on and off the LEDS2
A control signal S20 is output in response to an instruction signal S10 indicating the ON / OFF state of W10, and the control signal S20 is supplied to the drive unit 30 to act as a controller that controls the operation of the drive unit 30. The control unit 20 includes, for example, a CPU
And a processing circuit that outputs a control signal S20 in response to the input of the instruction signal S10.

【0026】図1(B)に示されるように、ロー(Lo
w)レベルからハイ(High)レベルに切り換わる指
示信号S10のパルス電圧波形の立ち上がり時に、制御
部20はハイ(High)レベルの制御信号S20を出
力して駆動部30に発光ダイオードLEDS1,LED
S2への電力供給(即ち、発光ダイオードLEDS1,
LEDS2の点灯動作)を行なわせる。即ち、制御部2
0が、発光ダイオードLEDS1,LEDS2の点灯を
指示する指示信号S10を受けた際に、駆動部30に発
光ダイオードLEDS1,LEDS2へ電圧を印加させ
る制御信号S20を出力する。
As shown in FIG. 1 (B), low (Lo)
When the pulse voltage waveform of the instruction signal S10 that switches from the w) level to the high level rises, the control unit 20 outputs the control signal S20 of the high level and outputs the light emitting diodes LEDS1, LED to the driving unit 30.
Power supply to S2 (ie, light emitting diodes LEDS1,
LEDS2 lighting operation). That is, the control unit 2
When 0 receives an instruction signal S10 for instructing lighting of the light emitting diodes LEDS1 and LEDS2, it outputs a control signal S20 for causing the drive unit 30 to apply a voltage to the light emitting diodes LEDS1 and LEDS2.

【0027】一方、ハイレベルからローレベルに切り換
わる指示信号S10のパルス電圧波形の立ち下がり時、
制御部20は、単に発光ダイオードLEDS1,LED
S2の消灯動作を駆動部30に行なわせる制御信号を出
力するのではなく、発光ダイオードLEDS1,LED
S2の明るさを周期的に徐々に暗くしていって最終的に
消灯させる複数段階の調光動作を駆動部30に行なわせ
る制御信号S20を出力する。
On the other hand, when the pulse voltage waveform of the instruction signal S10 that switches from the high level to the low level falls,
The control unit 20 simply includes the light emitting diodes LEDS1, LED
Instead of outputting a control signal for causing the drive unit 30 to perform the light-off operation of S2, the light emitting diodes LEDS1 and LEDS1 are not output.
A control signal S20 is output to cause the drive unit 30 to perform a plurality of stages of dimming operations in which the brightness of S2 is gradually darkened periodically and finally turned off.

【0028】具体的に、制御部20は、指示信号S10
のパルス電圧波形がハイレベルからローレベルに切り換
わった際に、所定の期間、ハイレベルとローレベルを交
互に繰り返すパルス電圧波形の制御信号S20を出力す
る。このとき、制御部20は、一定周期毎に制御信号S
20のハイレベル時のパルス幅を徐々に小さく且つロー
レベル時のパルス幅を徐々に大きくし、そして所定の期
間の終了時に制御信号S20がローレベル一定となるよ
うにして、駆動部30のPWM制御(即ち、パルス幅変
調制御)を行なう。
Specifically, the control unit 20 controls the instruction signal S10
When the pulse voltage waveform is switched from the high level to the low level, a control signal S20 having a pulse voltage waveform that alternates between a high level and a low level for a predetermined period is output. At this time, the control unit 20 outputs the control signal S
The pulse width of the drive unit 30 at the high level is gradually reduced and the pulse width at the low level is gradually increased, and the control signal S20 becomes constant at the low level at the end of the predetermined period. Control (that is, pulse width modulation control) is performed.

【0029】即ち、制御部20は、発光ダイオードLE
DS1,LEDS2の消灯を指示する指示信号S10を
受けた際に、駆動部30に、所定の期間、発光ダイオー
ドLEDS1,LEDS2への電圧の印加および非印加
を交互に繰り返し行なわせ且つ、一定周期毎に徐々に発
光ダイオードLEDS1,LEDS2への電圧の印加時
間を短く且つ電圧の非印加時間を長くさせ、そして当該
所定の期間の終了時に発光ダイオードLEDS1,LE
DS2への電圧の非印加を行なわせる制御信号S20を
出力する。
That is, the control unit 20 controls the light emitting diode LE
Upon receiving an instruction signal S10 for instructing DS1 and LEDS2 to be turned off, the driving unit 30 alternately repeats application and non-application of voltage to the light emitting diodes LEDS1 and LEDS2 for a predetermined period, and The voltage application time to the light emitting diodes LEDS1, LEDS2 is gradually shortened and the voltage non-application time is gradually increased, and at the end of the predetermined period, the light emitting diodes LEDS1, LES
A control signal S20 for causing non-application of a voltage to DS2 is output.

【0030】このように、本発明の半導体発光素子用駆
動装置10は、発光ダイオードLEDS1,LEDS2
の消灯を指示する指示信号S10を制御部20が受けた
際に、発光ダイオードLEDS1,LEDS2を即時に
消灯させず、白熱バルブのようにゆっくりと発光ダイオ
ードLEDS1,LEDS2の発光をフェードアウトさ
せる(即ち、発光量を徐々に減らす)ことができるの
で、点灯遅延時間が短い発光ダイオードLEDS1,L
EDS2の特性を生かしつつ、発光ダイオードLEDS
1,LEDS2が用いられる車両の外部灯火系装置や車
両内照明装置の消灯時における優美さを白熱バルブが用
いられたときと視覚上同様にすることができる。
As described above, the semiconductor light emitting device driving device 10 of the present invention comprises the light emitting diodes LEDS1 and LEDS2.
When the control unit 20 receives the instruction signal S10 for instructing to turn off the LEDs, the light emitting diodes LEDS1 and LEDS2 are not immediately turned off, but the light emission of the light emitting diodes LEDS1 and LEDS2 is faded out slowly like an incandescent bulb (ie, (Light emission amount can be gradually reduced), so that the light emitting diodes LEDS1, L
Light emitting diode LEDS while utilizing the characteristics of EDS2
1, when the external lighting system of the vehicle using the LEDS2 or the lighting device inside the vehicle is turned off, the elegance can be made visually the same as when the incandescent bulb is used.

【0031】図1(B)では、前述の所定の期間を80
ミリ秒(msec.)、そして当該所定の期間における
制御信号S20のパルス周期を10ミリ秒(即ち、PW
M駆動周波数を100Hz)にして前述の一定周期を制
御信号S20のパルス周期の2倍(即ち、20ミリ秒)
に設定した例が示されている。従って、この例では、8
0ミリ秒の間、ハイレベルのパルス幅とローレベルのパ
ルス幅とのデューティ比が20ミリ秒毎に徐々に変化
し、最終的にローレベル一定となる制御信号S20を制
御部20が出力している。尚、図1(B)では、前述の
一定周期を制御信号S20のパルス周期の2倍とした例
が示されているが、これに限らず、適宜、当該一定周期
をパルス周期の等倍や3倍以上としてもよい。
In FIG. 1B, the predetermined period is set to 80
Milliseconds (msec.), And the pulse period of the control signal S20 in the predetermined period is set to 10 milliseconds (that is, PW
M drive frequency is set to 100 Hz, and the above-mentioned constant period is twice as long as the pulse period of the control signal S20 (ie, 20 milliseconds).
Is set. Therefore, in this example, 8
During 0 ms, the control unit 20 outputs a control signal S20 in which the duty ratio between the high-level pulse width and the low-level pulse width gradually changes every 20 milliseconds, and finally becomes a low-level constant. ing. Although FIG. 1B shows an example in which the above-mentioned fixed period is twice as long as the pulse period of the control signal S20, the present invention is not limited to this. It may be three times or more.

【0032】尚、調光時(即ち、発光のフェードアウト
時)における発光ダイオードLEDS1,LEDS2の
発光のチラツキ感(即ち、フリッカ)を抑制するため、
制御部20のPWM駆動周波数は低くとも100Hzに
設定することが望ましい。換言すれば、駆動部30に発
光ダイオードLEDS1,LEDS2への電圧の印加お
よび非印加を交互に繰り返し行なわせる際の制御信号S
20のパルス周期を長くとも10ミリ秒に設定すること
が好ましい。
Incidentally, in order to suppress the flickering (ie, flicker) of the light emission of the light emitting diodes LEDS1 and LEDS2 at the time of dimming (ie, at the time of light emission fade-out),
It is desirable that the PWM drive frequency of the control unit 20 be set to at least 100 Hz. In other words, the control signal S for causing the drive unit 30 to alternately repeat the application and non-application of the voltage to the light emitting diodes LEDs1 and LEDs2.
Preferably, the 20 pulse periods are set to at most 10 milliseconds.

【0033】また、調光時(即ち、発光のフェードアウ
ト時)における発光ダイオードLEDS1,LEDS2
の発光のチラツキ感(即ち、フリッカ)を抑制するため
だけでなく、制御信号S20による高速スイッチングに
対する駆動部30の追従安定性を確保するために、制御
部20のPWM駆動周波数は100Hz〜1KHzに設
定することが望ましい。換言すれば、駆動部30に発光
ダイオードLEDS1,LEDS2への電圧の印加およ
び非印加を交互に繰り返し行なわせる際の制御信号S2
0のパルス周期を10ミリ秒〜1ミリ秒の間に設定する
ことが好ましい。
The light emitting diodes LEDS1 and LEDS2 at the time of dimming (that is, at the time of fading out of light emission)
The PWM drive frequency of the control unit 20 is set to 100 Hz to 1 KHz in order to not only suppress the flickering of light emission (i.e., flicker), but also to ensure the stability of the drive unit 30 following high-speed switching by the control signal S20. It is desirable to set. In other words, the control signal S2 for causing the drive unit 30 to alternately repeat the application and non-application of the voltage to the light emitting diodes LEDs1 and LEDs2.
It is preferable that the pulse period of 0 is set between 10 ms and 1 ms.

【0034】また、発光ダイオードLEDS1,LED
S2が用いられる車両の外部灯火系装置や車両内照明装
置の消灯時における視覚的な高級感を得るために、駆動
部30が発光ダイオードLEDS1,LEDS2の消灯
を指示する指示信号S10を受けたときから発光ダイオ
ードLEDS1,LEDS2を消灯させるまでの所定の
期間を短くとも50ミリ秒に設定することが望ましい。
また更に、発光ダイオードLEDS1,LEDS2の消
灯遅延時間が長すぎるといった違和感も無くすために、
前述の所定の期間を50ミリ秒〜200ミリ秒に設定す
ることが望ましい。
Further, the light emitting diodes LEDS1, LED
When the drive unit 30 receives an instruction signal S10 for instructing the light-emitting diodes LEDS1 and LEDS2 to be turned off in order to obtain a visual luxury when the external lighting system of the vehicle or the vehicle interior lighting device using S2 is turned off. It is desirable to set a predetermined period from turning off the light emitting diodes LEDS1 and LEDS2 to at least 50 milliseconds.
Furthermore, in order to eliminate a sense of incongruity that the light-off delay time of the light emitting diodes LEDS1 and LEDS2 is too long,
It is desirable to set the above-mentioned predetermined period to 50 milliseconds to 200 milliseconds.

【0035】即ち、調光開始から消灯までの時間を50
ミリ秒〜200ミリ秒に設定して発光ダイオードLED
S1,LEDS2の発光をゆっくりとフェードアウトさ
せることが好ましい。
That is, the time from the start of dimming to turning off is set to 50.
Light emitting diode LED with millisecond to 200 millisecond setting
It is preferable to make the light emission of S1 and LEDS2 fade out slowly.

【0036】尚、上述のうち所望の設定値は全て制御部
20にプリセットされているが、各種設定値が全て記録
され且つ制御部20による各種設定値の変更を許容する
設定値保存用EEP−ROM(即ち、Electric
ally Erasableand Programm
able−Read Only Memory)を制御
部20と別体または一体に設けてもよい。
The desired set values are all preset in the control unit 20. However, all the set values are recorded and the setting value storage EEP-ROM which allows the control unit 20 to change the various set values is set. ROM (that is, Electric
all Erasable Program
Able-Read Only Memory may be provided separately or integrally with the control unit 20.

【0037】次に、駆動部30の構成を詳細に説明す
る。駆動部30は、電力供給線40と素子駆動線50と
に電気的に接続しており、制御部20からの制御信号S
20に従って電流制限抵抗R1,R2への供給電圧Vb
の印加および非印加を行なって発光ダイオードLEDS
1,LEDS2を点灯および消灯させる。この駆動部3
0はPWM駆動による高速スイッチングのためにスイッ
チングトランジスタTr10と半導体リレーSRE1を
備えている。
Next, the configuration of the driving section 30 will be described in detail. The drive unit 30 is electrically connected to the power supply line 40 and the element drive line 50, and receives a control signal S from the control unit 20.
20 the supply voltage Vb to the current limiting resistors R1 and R2
Of light emitting diode LEDS
1, LEDS2 is turned on and off. This drive unit 3
Reference numeral 0 includes a switching transistor Tr10 and a semiconductor relay SRE1 for high-speed switching by PWM driving.

【0038】スイッチングトランジスタTr10のベー
ス端子(B)は、制御部20と電気的に接続されてお
り、制御信号S20を受ける。また、スイッチングトラ
ンジスタTr10のエミッタ端子(E)は、グランド
(G)と電気的に接続されている。尚、本実施形態で
は、スイッチングトランジスタTr10の一例として図
1(A)に示されるようにNPN型のバイポーラトラン
ジスタを使用したが、その他、PNP型のバイポーラト
ランジスタ、MOSFET、等を適宜用いてもよい。ま
た、用いられるスイッチングトランジスタTr10のタ
イプに応じて、適宜、指示信号S10や制御信号S20
の位相を反転させてもよい。
The base terminal (B) of the switching transistor Tr10 is electrically connected to the control unit 20 and receives a control signal S20. The emitter terminal (E) of the switching transistor Tr10 is electrically connected to the ground (G). In this embodiment, an NPN-type bipolar transistor is used as an example of the switching transistor Tr10 as shown in FIG. 1A, but a PNP-type bipolar transistor, a MOSFET, or the like may be used as appropriate. . Further, depending on the type of the switching transistor Tr10 used, the instruction signal S10 and the control signal S20 are appropriately set.
May be inverted.

【0039】半導体リレーSRE1はスイッチングパワ
ートランジスタQ1を有している。スイッチングパワー
トランジスタQ1のゲート端子(G)は、スイッチング
トランジスタTr10のコレクタ端子(C)と電気的に
接続され、ドレイン端子(D)は電力供給線40に電気
的に接続され、そしてソース端子(S)は素子駆動線5
0に電気的に接続されている。更に、半導体リレーSR
E1には必要に応じて抵抗R3が設けられる。
The semiconductor relay SRE1 has a switching power transistor Q1. The gate terminal (G) of the switching power transistor Q1 is electrically connected to the collector terminal (C) of the switching transistor Tr10, the drain terminal (D) is electrically connected to the power supply line 40, and the source terminal (S ) Is the element drive line 5
0 is electrically connected. Furthermore, semiconductor relay SR
E1 is provided with a resistor R3 as required.

【0040】本実施形態において、抵抗R3は、スイッ
チングパワートランジスタQ1のゲート端子(G)とス
イッチングトランジスタTr10のコレクタ端子(C)
とを結ぶ線と、電力供給線40との間に設けられてい
る。抵抗R3は、スイッチングトランジスタTr10の
ベース端子(B)に制御部20からハイレベルの制御信
号S20が供給されてスイッチングトランジスタTr1
0がON状態となった際に、スイッチングトランジスタ
Tr10のコレクタ端子(C)からエミッタ端子(E)
に流れる電流を電力供給線40から供給する。
In this embodiment, the resistor R3 is connected to the gate terminal (G) of the switching power transistor Q1 and the collector terminal (C) of the switching transistor Tr10.
And a power supply line 40. The high-level control signal S20 is supplied from the control unit 20 to the base terminal (B) of the switching transistor Tr10.
When 0 is turned on, the collector terminal (C) to the emitter terminal (E) of the switching transistor Tr10.
Is supplied from the power supply line 40.

【0041】尚、本実施形態では、スイッチングパワー
トランジスタQ1の一例として図1(A)に示されるよ
うにPチャネル型のパワーMOSFETを使用したが、
その他、(チャージポンプを用いた)Nチャネル型のパ
ワーMOSFET、バイポーラトランジスタ、等を適宜
用いてもよい。また、用いられるスイッチングパワート
ランジスタQ1のタイプに応じて、適宜、指示信号S1
0や制御信号S20の位相を反転させてもよい。
In this embodiment, as an example of the switching power transistor Q1, a P-channel type power MOSFET is used as shown in FIG.
In addition, an N-channel power MOSFET (using a charge pump), a bipolar transistor, or the like may be used as appropriate. Further, the instruction signal S1 is appropriately set according to the type of the switching power transistor Q1 used.
0 or the phase of the control signal S20 may be inverted.

【0042】さて、スイッチングトランジスタTr10
は、そのベース端子(B)に印加される制御信号S20
がハイレベルの場合、スイッチングトランジスタTr1
0のコレクタ端子(C)からエミッタ端子(E)に電流
が流れる状態となり、電力供給線40から電流が抵抗R
3を介して流れるため、スイッチングパワートランジス
タQ1のゲート端子(G)の電位がローレベルとなっ
て、スイッチングパワートランジスタQ1がON状態と
なる。よって、素子駆動線50に供給電圧Vbと略等し
い電位が生じ、電流制限抵抗R1,R2を介して発光ダ
イオードLEDS1,LEDS2に電流が流れ、従っ
て、発光ダイオードLEDS1,LEDS2が発光す
る。
Now, the switching transistor Tr10
Is a control signal S20 applied to the base terminal (B).
Is high level, the switching transistor Tr1
0 from the collector terminal (C) to the emitter terminal (E).
3, the potential of the gate terminal (G) of the switching power transistor Q1 becomes low level, and the switching power transistor Q1 is turned on. Therefore, a potential substantially equal to the supply voltage Vb is generated in the element drive line 50, and a current flows through the light emitting diodes LEDS1 and LEDS2 via the current limiting resistors R1 and R2, so that the light emitting diodes LEDS1 and LEDS2 emit light.

【0043】一方、スイッチングトランジスタTr10
のベース端子(B)に印加される制御信号S20がロー
レベルになると、スイッチングトランジスタTr10の
コレクタ端子(C)とエミッタ端子(E)の間には電流
が流れなくなるので、スイッチングパワートランジスタ
Q1のゲート端子(G)の電位が供給電圧Vbと略等し
くなって、スイッチングパワートランジスタQ1はOF
F状態となり、発光ダイオードLEDS1,LEDS2
が消灯する。
On the other hand, the switching transistor Tr10
When the control signal S20 applied to the base terminal (B) becomes low level, no current flows between the collector terminal (C) and the emitter terminal (E) of the switching transistor Tr10. The potential of the terminal (G) becomes substantially equal to the supply voltage Vb, and the switching power transistor Q1 is turned off.
F state, the light emitting diodes LEDs1 and LEDs2
Turns off.

【0044】以上、本発明の一実施形態である半導体発
光素子用駆動装置10について説明してきたが、本発明
は、点灯遅延時間ならびに消灯遅延時間が白熱バルブよ
りも短い半導体発光素子の駆動に効果的である。例え
ば、ストップランプ、テールランプ、ターンランプ、等
の車両の外部灯火系装置や、例えば、ルームランプ、マ
ップランプ、フットランプ、等の車両内照明装置に光源
として用いられる半導体発光素子の駆動装置に本発明を
適用すれば、優れた効果が得られる。特に、ストップラ
ンプは、車両運行上、頻繁に点灯および消灯が為される
ので、本発明による効果は絶大である。
Although the semiconductor light emitting device driving device 10 according to one embodiment of the present invention has been described above, the present invention is effective for driving a semiconductor light emitting device having a lighting delay time and a light emitting delay time shorter than that of an incandescent bulb. It is a target. For example, the present invention is applied to an external lighting system of a vehicle such as a stop lamp, a tail lamp, a turn lamp, and the like, and a driving device of a semiconductor light emitting element used as a light source for a vehicle interior lighting device such as a room lamp, a map lamp, and a foot lamp. By applying the invention, excellent effects can be obtained. In particular, since the stop lamp is frequently turned on and off during vehicle operation, the effect of the present invention is enormous.

【0045】尚、本発明は、前述した実施形態に限定さ
れるものではなく、適宜、変形,改良,等が可能であ
る。その他、前述した実施形態における各構成要素の形
状,形態,数,配置個所,等は本発明を達成できるもの
であれば任意であり、限定されない。尚、前述のように
所定の期間やパルス周期(即ち、PWM駆動周波数)の
具体的な設定値を例示したが、半導体発光素子が光源と
して用いられる外部灯火系装置や車両内照明装置(即
ち、ランプ)の種類に応じて、消灯時の高級感が得られ
るように、前述の設定値をそれら以外の設定値に適宜変
更してもよい。
It should be noted that the present invention is not limited to the above-described embodiment, but can be appropriately modified and improved. In addition, the shape, form, number, location, and the like of each component in the above-described embodiment are arbitrary and not limited as long as the present invention can be achieved. Although the specific set values of the predetermined period and the pulse period (that is, the PWM drive frequency) are exemplified as described above, the external lighting system or the vehicle interior lighting device (that is, the vehicle interior lighting device in which the semiconductor light emitting element is used as the light source) Depending on the type of the lamp, the above-mentioned set values may be appropriately changed to other set values so as to obtain a high-grade feeling when the lights are turned off.

【0046】尚、指示信号S10と制御信号S20は図
1(B)に示されるような矩形波に限らず、指示信号S
10と制御信号S20の少なくとも一方を、例えば、三
角波、ノコギリ波、等にしてもよい。また、前述の実施
形態では、ハイレベルとローレベルの電位差により形成
されたパルス電圧波形を有する一つの指示信号S10を
用いているが、これに限定されない。指示信号S10の
代わりに、例えば2種類のロジック信号をそれぞれ制御
部20に入力し、それらのロジック信号を基にスイッチ
SW10のON/OFF状態を制御部20に割り出さ
せ、適宜、制御信号S20を生成させてもよい。
The instruction signal S10 and the control signal S20 are not limited to rectangular waves as shown in FIG.
At least one of 10 and the control signal S20 may be, for example, a triangular wave, a sawtooth wave, or the like. In the above-described embodiment, one instruction signal S10 having a pulse voltage waveform formed by a potential difference between a high level and a low level is used, but the present invention is not limited to this. Instead of the instruction signal S10, for example, two types of logic signals are input to the control unit 20, and the control unit 20 determines the ON / OFF state of the switch SW10 based on the logic signals. May be generated.

【0047】[0047]

【発明の効果】以上、説明したように、本発明によれ
ば、半導体発光素子用駆動装置の制御部が、半導体発光
素子の消灯を指示する指示信号を受けた際に、駆動部
に、所定の期間、半導体発光素子への電圧の印加および
非印加を交互に繰り返し行なわせ且つ、一定周期毎に徐
々に半導体発光素子への電圧の印加時間を短く且つ電圧
の非印加時間を長くさせ、そして当該所定の期間の終了
時に半導体発光素子への電圧の非印加を行なわせる制御
信号を出力する。それ故、本発明の半導体発光素子用駆
動装置は、点灯遅延時間ならびに消灯遅延時間が白熱バ
ルブよりも短い半導体発光素子の駆動に効果的である。
即ち、本発明の半導体発光素子用駆動装置は、半導体発
光素子の消灯を指示する指示信号を制御部が受けた際
に、半導体発光素子を即時に消灯させず、白熱バルブの
ようにゆっくりと半導体発光素子の発光をフェードアウ
トさせることができるので、点灯遅延時間が短い半導体
発光素子の特性を生かしつつ、当該半導体発光素子が用
いられる車両の外部灯火系装置や車両内照明装置の消灯
時における優美さを白熱バルブが用いられたときと視覚
上同様にすることができる。
As described above, according to the present invention, when the control unit of the semiconductor light emitting element driving device receives the instruction signal for instructing the semiconductor light emitting element to be turned off, the control unit transmits the predetermined signal to the driving unit. During the period, the application and non-application of the voltage to the semiconductor light emitting element are alternately and repeatedly performed, and the application time of the voltage to the semiconductor light emitting element is gradually shortened and the non-application time of the voltage is gradually increased at regular intervals, and At the end of the predetermined period, a control signal for causing no voltage to be applied to the semiconductor light emitting element is output. Therefore, the driving device for a semiconductor light emitting device of the present invention is effective in driving a semiconductor light emitting device in which the lighting delay time and the lighting delay time are shorter than that of the incandescent bulb.
That is, when the control unit receives an instruction signal for instructing to turn off the semiconductor light emitting element, the semiconductor light emitting element driving device of the present invention does not immediately turn off the semiconductor light emitting element. Since the light emission of the light emitting element can be faded out, while utilizing the characteristics of the semiconductor light emitting element having a short lighting delay time, the elegance at the time of turning off the external lighting system of the vehicle or the lighting device in the vehicle using the semiconductor light emitting element is used. Can be visually similar to when an incandescent bulb is used.

【0048】また、本発明によれば、駆動部が半導体発
光素子の消灯を指示する指示信号を受けたときから半導
体発光素子を消灯させるまでの所定の期間を短くとも5
0ミリ秒に設定しているので、当該半導体発光素子が用
いられる車両の外部灯火系装置や車両内照明装置の消灯
時における高級感を損ねない。
Further, according to the present invention, the predetermined period from when the driver receives the instruction signal for instructing to turn off the semiconductor light emitting element to when the semiconductor light emitting element is turned off is set to at least five times.
Since it is set to 0 milliseconds, the sense of quality at the time of turning off the external lighting system of the vehicle or the lighting device in the vehicle using the semiconductor light emitting element is not impaired.

【0049】また、本発明によれば、駆動部が半導体発
光素子の消灯を指示する指示信号を受けたときから半導
体発光素子を消灯させるまでの所定の期間を50ミリ秒
から200ミリ秒の間に設定しているので、当該半導体
発光素子が用いられる車両の外部灯火系装置や車両内照
明装置の消灯時における高級感を損ねること無く、ま
た、消灯遅延時間が長すぎるといった違和感も無くすこ
とができる。
Further, according to the present invention, the predetermined period from when the driving unit receives the instruction signal for instructing to turn off the semiconductor light emitting element to when the semiconductor light emitting element is turned off is set to 50 to 200 milliseconds. Since it is set to, it does not impair the luxury feeling when the external lighting system of the vehicle or the vehicle interior lighting device in which the semiconductor light emitting element is used is turned off, and also eliminates the uncomfortable feeling that the light-off delay time is too long. it can.

【0050】また、本発明によれば、駆動部に半導体発
光素子への電圧の印加および非印加を交互に繰り返し行
なわせる際の制御信号のパルス周期を長くとも10ミリ
秒に設定しているので、調光時(即ち、発光のフェード
アウト時)における半導体発光素子の発光のチラツキ感
(即ち、フリッカ)を抑制することができる。
Further, according to the present invention, the pulse period of the control signal for causing the driving section to alternately apply and not apply the voltage to the semiconductor light emitting element is set to at most 10 milliseconds. In addition, it is possible to suppress a flicker of light emitted from the semiconductor light emitting element (ie, flicker) at the time of dimming (that is, at the time of fading out of light).

【0051】また、本発明によれば、駆動部に半導体発
光素子への電圧の印加および非印加を交互に繰り返し行
なわせる際の制御信号のパルス周期を10ミリ秒から1
ミリ秒の間に設定しているので、調光時(即ち、発光の
フェードアウト時)における半導体発光素子の発光のチ
ラツキ感(即ち、フリッカ)を抑制することができるだ
けでなく、制御信号による高速スイッチングに対する駆
動部の追従安定性を確保することができる。
Further, according to the present invention, the pulse period of the control signal for causing the drive unit to alternately repeat the application and non-application of the voltage to the semiconductor light emitting element is set to 10 milliseconds to 1 millisecond.
Since the setting is performed in milliseconds, it is possible not only to suppress the flickering (ie, flicker) of the light emission of the semiconductor light emitting element at the time of dimming (ie, at the time of light emission fading), but also to perform high-speed switching by a control signal. , The following stability of the drive unit can be secured.

【図面の簡単な説明】[Brief description of the drawings]

【図1】(A)は半導体発光素子を駆動するための本発
明の半導体発光素子用駆動装置の回路構成を示す図、そ
して(B)は指示信号のパルス電圧波形と制御信号のパ
ルス電圧波形のタイミングチャートである。
1A is a diagram showing a circuit configuration of a semiconductor light emitting device driving device of the present invention for driving a semiconductor light emitting device, and FIG. 1B is a diagram showing a pulse voltage waveform of an instruction signal and a pulse voltage waveform of a control signal. 6 is a timing chart of FIG.

【図2】(A)は従来の自動車用ストップランプの白熱
バルブを点灯および消灯させる駆動装置の一例を示す
図、そして(B)は指示信号のパルス電圧波形と制御信
号のパルス電圧波形のタイミングチャートである。
FIG. 2A is a diagram showing an example of a conventional drive device for turning on and off an incandescent bulb of a stop lamp for an automobile, and FIG. 2B is a timing chart of a pulse voltage waveform of an instruction signal and a pulse voltage waveform of a control signal. It is a chart.

【符号の説明】[Explanation of symbols]

10 半導体発光素子用駆動装置 20 制御部 30 駆動部 40 電力供給線 50 素子駆動線 S10 指示信号 S20 制御信号 LEDS1,LEDS2 発光ダイオード(半導体発光
素子) Tr10 スイッチングトランジスタ SRE1 半導体リレー Q1 スイッチングパワートランジスタ
Reference Signs List 10 drive device for semiconductor light emitting device 20 control unit 30 drive unit 40 power supply line 50 element drive line S10 instruction signal S20 control signal LEDs1, LEDs2 light emitting diode (semiconductor light emitting device) Tr10 switching transistor SRE1 semiconductor relay Q1 switching power transistor

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】 半導体発光素子の点灯および消灯を指示
するための指示信号に応じて制御信号を出力する制御部
と、 前記制御信号に従って前記半導体発光素子への電力供給
を行なう駆動部と、 を備え、 前記制御部が、前記半導体発光素子の点灯を指示する指
示信号を受けた際に、前記駆動部に前記半導体発光素子
へ電圧を印加させる制御信号を出力し、そして、 前記制御部が、前記半導体発光素子の消灯を指示する指
示信号を受けた際に、前記駆動部に、所定の期間、前記
半導体発光素子への電圧の印加および非印加を交互に繰
り返し行なわせ且つ、一定周期毎に徐々に前記半導体発
光素子への電圧の印加時間を短く且つ電圧の非印加時間
を長くさせ、そして前記所定の期間の終了時に前記半導
体発光素子への電圧の非印加を行なわせる制御信号を出
力し、それにより前記半導体発光素子を徐々に消灯させ
ることを特徴とする半導体発光素子用駆動装置。
A control unit that outputs a control signal in response to an instruction signal for instructing turning on and off of the semiconductor light emitting element; and a driving unit that supplies power to the semiconductor light emitting element in accordance with the control signal. When the control unit receives an instruction signal for instructing lighting of the semiconductor light emitting element, the control unit outputs a control signal for applying a voltage to the semiconductor light emitting element to the driving unit, and Upon receiving an instruction signal for instructing turning off of the semiconductor light emitting element, the driving unit causes the drive unit to alternately repeat application and non-application of a voltage to the semiconductor light emitting element for a predetermined period, and at regular intervals. The voltage application time to the semiconductor light emitting element is gradually shortened, the voltage non-application time is lengthened, and the voltage is not applied to the semiconductor light emitting element at the end of the predetermined period. Outputs a signal, whereby said semiconductor light emitting element driving apparatus characterized by gradually turning off the semiconductor light-emitting element.
【請求項2】 前記所定の期間が、短くとも50ミリ秒
であることを特徴とする請求項1に記載した半導体発光
素子用駆動装置。
2. The driving device for a semiconductor light emitting device according to claim 1, wherein the predetermined period is at least 50 milliseconds.
【請求項3】 前記所定の期間が、50ミリ秒から20
0ミリ秒の間で設定されることを特徴とする請求項1ま
たは請求項2に記載した半導体発光素子用駆動装置。
3. The method according to claim 2, wherein the predetermined period is between 50 milliseconds and 20 milliseconds.
3. The driving device for a semiconductor light emitting device according to claim 1, wherein the driving time is set within 0 ms.
【請求項4】 前記駆動部に前記半導体発光素子への電
圧の印加および非印加を交互に繰り返し行なわせる際の
前記制御信号のパルス周期が、長くとも10ミリ秒であ
ることを特徴とする請求項1から請求項3のいずれか一
つに記載した半導体発光素子用駆動装置。
4. A pulse cycle of the control signal when the drive section alternately repeats application and non-application of a voltage to the semiconductor light emitting element is at most 10 milliseconds. The driving device for a semiconductor light emitting device according to any one of claims 1 to 3.
【請求項5】 前記駆動部に前記半導体発光素子への電
圧の印加および非印加を交互に繰り返し行なわせる際の
前記制御信号のパルス周期が、10ミリ秒から1ミリ秒
の間で設定されることを特徴とする請求項1から請求項
4のいずれか一つに記載した半導体発光素子用駆動装
置。
5. A pulse cycle of the control signal when the drive section alternately repeats application and non-application of a voltage to the semiconductor light emitting element is set to be between 10 milliseconds and 1 millisecond. The driving device for a semiconductor light emitting device according to any one of claims 1 to 4, wherein:
JP2002157885A 2002-05-30 2002-05-30 Driver for semiconductor light emitting element Pending JP2003347594A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002157885A JP2003347594A (en) 2002-05-30 2002-05-30 Driver for semiconductor light emitting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002157885A JP2003347594A (en) 2002-05-30 2002-05-30 Driver for semiconductor light emitting element

Publications (1)

Publication Number Publication Date
JP2003347594A true JP2003347594A (en) 2003-12-05

Family

ID=29773522

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JP2003347594A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007145114A (en) * 2005-11-25 2007-06-14 Stanley Electric Co Ltd Illumination lamp
JP2008047912A (en) * 2006-08-10 2008-02-28 Lg Electronics Inc Driving system of light emitting element, and driving method thereof
JP2008210855A (en) * 2007-02-23 2008-09-11 Matsushita Electric Works Ltd Led control system
WO2009019945A1 (en) * 2007-08-07 2009-02-12 Rohm Co., Ltd. Light source turn-on/off controller
JP2011528168A (en) * 2008-07-04 2011-11-10 オスラム アクチエンゲゼルシャフト Circuit apparatus and method for operating at least a first LED and a second LED
JP2021121998A (en) * 2020-01-31 2021-08-26 株式会社大野技術研究所 PWM conversion circuit, PWM conversion method and LED dimming system

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7688008B2 (en) 2005-11-25 2010-03-30 Stanley Electric Co., Ltd. Lighting lamp
JP4627252B2 (en) * 2005-11-25 2011-02-09 スタンレー電気株式会社 Lighting fixture
JP2007145114A (en) * 2005-11-25 2007-06-14 Stanley Electric Co Ltd Illumination lamp
US8358257B2 (en) 2006-08-10 2013-01-22 Lg Electronics Inc. Operating system and method of light emitting device
JP2008047912A (en) * 2006-08-10 2008-02-28 Lg Electronics Inc Driving system of light emitting element, and driving method thereof
TWI418055B (en) * 2006-08-10 2013-12-01 Lg Electronics Inc Operating system and method of light emitting device
JP2008210855A (en) * 2007-02-23 2008-09-11 Matsushita Electric Works Ltd Led control system
US8400062B2 (en) 2007-08-07 2013-03-19 Rohm Co., Ltd. Light source turn-on/off controller
US8283867B2 (en) 2007-08-07 2012-10-09 Rohm Co., Ltd. Light source turn-on/off controller
US8575840B2 (en) 2007-08-07 2013-11-05 Rohm Co., Ltd. Light source turn-on/off controller
WO2009019945A1 (en) * 2007-08-07 2009-02-12 Rohm Co., Ltd. Light source turn-on/off controller
JP2015128077A (en) * 2007-08-07 2015-07-09 ローム株式会社 Lighting or lights-out controller of light source
JP2011528168A (en) * 2008-07-04 2011-11-10 オスラム アクチエンゲゼルシャフト Circuit apparatus and method for operating at least a first LED and a second LED
US8547031B2 (en) 2008-07-04 2013-10-01 Osram Gesellschaft Mit Beschraenkter Haftung Circuit configuration and method for operating at least one first and one second LED
JP2021121998A (en) * 2020-01-31 2021-08-26 株式会社大野技術研究所 PWM conversion circuit, PWM conversion method and LED dimming system

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