JP2003324265A - Etching method and manufacturing method for printed wiring board using it - Google Patents
Etching method and manufacturing method for printed wiring board using itInfo
- Publication number
- JP2003324265A JP2003324265A JP2003051023A JP2003051023A JP2003324265A JP 2003324265 A JP2003324265 A JP 2003324265A JP 2003051023 A JP2003051023 A JP 2003051023A JP 2003051023 A JP2003051023 A JP 2003051023A JP 2003324265 A JP2003324265 A JP 2003324265A
- Authority
- JP
- Japan
- Prior art keywords
- copper
- etching
- produced
- wiring board
- printed wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
Landscapes
- Parts Printed On Printed Circuit Boards (AREA)
- ing And Chemical Polishing (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、エッチング方法、
およびプリント配線板の製造方法に関する。TECHNICAL FIELD The present invention relates to an etching method,
And a method for manufacturing a printed wiring board.
【0002】[0002]
【従来の技術】近年、電子機器の小型、軽量、高速化の
要求が高まり、プリント配線板の高密度化が進んでい
る。従来の、銅をエッチングすることで作製するプリン
ト配線板は、サイドエッチングの影響で配線の微細化に
は限界があり、基板の高密度化には限界があった。そこ
で近年は電気めっきを用いたセミアディティブ法による
プリント配線板の製造方法が注目されている。このセミ
アディティブ法は特許文献1にあるように回路を形成し
たい樹脂表面にレーザー等でIVHとなる穴を形成した
後に、化学粗化やプラズマ処理等により数μmの凹凸を
樹脂上に形成し、Pd触媒を付与し、1μm程度の無電
解めっきを行い、パターン電気めっきレジストを形成
し、パターン電気めっきにより回路形成を行った後にレ
ジスト及び余分な個所の無電解めっきを除去する手法で
ある。2. Description of the Related Art In recent years, there has been an increasing demand for smaller, lighter and faster electronic equipment, and the density of printed wiring boards has been increasing. In the conventional printed wiring board produced by etching copper, there is a limit to the miniaturization of wiring due to the influence of side etching, and there is a limitation to increase the density of the substrate. Therefore, in recent years, a method for manufacturing a printed wiring board by a semi-additive method using electroplating has attracted attention. According to this semi-additive method, as described in Patent Document 1, after forming a hole that becomes IVH with a laser or the like on a resin surface on which a circuit is to be formed, unevenness of several μm is formed on the resin by chemical roughening or plasma treatment, This is a method in which a Pd catalyst is applied, electroless plating of about 1 μm is performed to form a pattern electroplating resist, and a circuit is formed by the pattern electroplating, and then the resist and extra electroless plating are removed.
【特許文献1】特開平11−186716号公報[Patent Document 1] Japanese Patent Laid-Open No. 11-186716
【0003】[0003]
【発明が解決しようとする課題】しかしながら、上記の
セミアディティブ法により回路形成を行う場合、樹脂上
に直接無電解銅めっき層を形成するためのPd触媒を付
与するために、その後の工程でPdを除去することが難
しい。樹脂上にPdが残存していると、絶縁信頼性の低
下等の不具合や後にNi/Auめっきを行う際に樹脂上
にめっきが析出してしまう等の不具合が生じる。また密
着性向上のために化学粗化やプラズマ処理等により数μ
mの凹凸を樹脂上に形成する必要があるが、粗化が不充
分で導体回路が剥離するような不具合が発生し易い。However, when a circuit is formed by the above semi-additive method, in order to provide a Pd catalyst for directly forming an electroless copper plating layer on the resin, Pd is added in the subsequent step. Is difficult to remove. If Pd remains on the resin, problems such as deterioration of insulation reliability and problems such as plating depositing on the resin when Ni / Au plating is performed later occur. Also, to improve adhesion, several μs are required by chemical roughening or plasma treatment.
Although it is necessary to form irregularities of m on the resin, roughening is insufficient and a problem such as peeling of the conductor circuit is likely to occur.
【0004】また、銅箔付樹脂上にセミアディティブ法
により回路形成を行う方法もある。この場合導体回路を
溶解させずに余分な個所の銅箔を除去出来ればよいので
あるが、通常銅箔も導体回路も電気銅めっきで作製して
いるためにエッチング速度差が生じず、逆に液あたりの
良い導体回路が先に溶解してしまうという不具合が発生
し、設計値通りの微細配線を形成することが出来なかっ
た。There is also a method of forming a circuit on a resin with copper foil by a semi-additive method. In this case, it suffices to be able to remove the copper foil at the extra portion without melting the conductor circuit, but since the copper foil and the conductor circuit are usually made by electrolytic copper plating, there is no difference in etching rate. There was a problem that the conductor circuit with good liquid content was dissolved first, and it was not possible to form the fine wiring as designed.
【0005】上記を鑑みて、本発明は、上記不具合を発
生し難くし、導体回路間のショート不良が少なく、回路
形成性のよいプリント配線板を提供することを目的とす
る。In view of the above, it is an object of the present invention to provide a printed wiring board which is less likely to cause the above problems, has less short circuit defects between conductor circuits, and has good circuit formability.
【0006】[0006]
【課題を解決するための手段】上記課題を解決するため
に、本発明は、同種金属の選択的エッチング方法につい
て検討を行った。In order to solve the above-mentioned problems, the present invention examined a selective etching method for the same kind of metal.
【0007】一般に金属は製法が異なると図3に示すよ
うに結晶の大きさ、方向性の異なるものが作製されると
いう特徴がある。製法と結晶の大きさ、または方向性の
相関を一義的に定義するのは困難であるが、通常は析出
速度が遅ければ大きな結晶になり、析出速度が速ければ
小さな結晶になる。このように結晶の大きさ、方向性が
異なる同種金属を同じエッチング液で同時にエッチング
した場合、その速度に違いが生じることがある。しか
し、必ずしも違いが生じるわけではなく、例えば、プリ
ント配線板の導体回路形成時、銅の溶解に通常用いられ
る塩化鉄、塩化銅等では結晶構造の違いによるエッチン
グ速度の差が殆どない。これは塩化鉄、塩化銅と銅の反
応が拡散律速であるからである。In general, when a metal is manufactured by a different method, it is characterized in that crystals having different crystal sizes and directions are produced as shown in FIG. Although it is difficult to uniquely define the correlation between the production method and the crystal size or the directionality, a slow precipitation rate usually results in a large crystal and a high precipitation rate results in a small crystal. In this way, when the same kind of metals having different crystal sizes and directions are simultaneously etched with the same etching solution, the speed may differ. However, a difference does not necessarily occur, and for example, in the case of forming a conductor circuit of a printed wiring board, there is almost no difference in etching rate due to a difference in crystal structure with iron chloride, copper chloride, etc. which are usually used for melting copper. This is because the reaction of copper with iron chloride or copper chloride is diffusion-controlled.
【0008】そこで、本発明においては、製法の異なる
2つ以上の同種金属を選択的にエッチングする際、反応
律速性となるエッチング液を用いることを第1の特徴と
している。In view of the above, the first feature of the present invention is to use an etching solution that is rate-determining for reaction when selectively etching two or more same metals produced by different methods.
【0009】ここで「製法の異なる」とは、本発明の選
択的エッチングの対象となる同種金属の作製方法の相違
を意味し、例えば、金属を還元する方法、条件、または
金属のめっき析出の方法、条件などの相違を指す。The term "different manufacturing method" as used herein means a difference in the manufacturing method of the same kind of metal which is the object of the selective etching of the present invention, and includes, for example, a method for reducing a metal, conditions, or metal plating deposition. Refers to differences in methods and conditions.
【0010】また、「同種金属」とは、同じ金属原子か
らなる金属のことであり、組成比が同じ合金もこれに含
む。The term "similar metal" means a metal composed of the same metal atom, and includes alloys having the same composition ratio.
【0011】さらに、「反応律速性となるエッチング
液」とは、金属に対するエッチング速度において、溶液
の拡散速度がその速度を支配するのではなく、金属と溶
液間の真の素反応の速度がエッチング速度を支配するよ
うなエッチング液を指す。例えば、エッチング液が金属
に対して反応律速である場合には、攪拌速度を大きくし
て液流を強めてもエッチング速度の変化が小さい。ま
た、本発明で対象となっている2つ以上の金属に対し
て、エッチング速度が結晶構造の違いによって異なって
いれば、この場合も反応律速であるといえる。Further, the "reaction rate-determining etching solution" means that the rate of the true elementary reaction between the metal and the solution is not the rate of diffusion of the solution that controls the rate of etching of the metal. Refers to an etchant that governs the rate. For example, when the etching solution is reaction-controlled with respect to the metal, the change in the etching rate is small even if the stirring speed is increased and the liquid flow is strengthened. If the etching rate of two or more metals used in the present invention is different due to the difference in crystal structure, it can be said that the reaction rate is determined in this case as well.
【0012】また、本発明の第1の特徴において、2つ
以上の同種金属のうち、難溶性の方のエッチング速度が
易溶性の方のエッチング速度の80%以下であることが
好ましい。In the first feature of the present invention, it is preferable that the etching rate of the less soluble one of the two or more same metals is 80% or less of the etching rate of the more easily soluble one.
【0013】ここで、本発明のおいて「難溶性」および
「易溶性」とは、互いに相対的なものであり、金属その
ものの性質を指すものではない。例えば、同じエッチン
グ液で2つの同種金属を同時にエッチングした場合、一
方の金属のエッチング速度が他方の金属のエッチング速
度に対して大きければ、一方の金属は「易溶性」とな
り、他方は「難溶性」となる。Here, in the present invention, "poorly soluble" and "easily soluble" are relative to each other and do not refer to the properties of the metal itself. For example, when two metals of the same kind are simultaneously etched with the same etching solution, if the etching rate of one metal is higher than the etching rate of the other metal, one metal becomes "easy soluble" and the other one "poorly soluble". It will be.
【0014】また、本発明の第1の特徴において、エッ
チング液はハロゲン元素を含まない酸と過酸化水素を主
成分とすることが好ましい。ハロゲン元素を含まない酸
とは化学式にフッ素原子や塩素原子等のハロゲン元素を
含まない化合物の酸のことであり、そのような酸として
は硫酸が好ましい。また、主成分が硫酸と過酸化水素で
ある場合には、それぞれ5〜300g/L、5〜200
g/Lの濃度であることが好ましい。Further, in the first feature of the present invention, it is preferable that the etching solution contains an acid containing no halogen element and hydrogen peroxide as main components. An acid containing no halogen element is an acid of a compound containing no halogen element such as a fluorine atom or a chlorine atom in its chemical formula, and sulfuric acid is preferable as such an acid. When the main components are sulfuric acid and hydrogen peroxide, they are 5 to 300 g / L and 5 to 200, respectively.
A concentration of g / L is preferred.
【0015】また、本発明の第1の特徴において、エッ
チング時のエッチング液の液温が20〜50℃の範囲で
あることが好ましい。Further, in the first feature of the present invention, it is preferable that the temperature of the etching liquid during etching is in the range of 20 to 50 ° C.
【0016】また、本発明の第1の特徴において、2つ
以上の同種金属が2つ以上の銅である場合、銅に対する
エッチングの律速段階は銅の酸化反応であることが好ま
しい。Further, in the first feature of the present invention, when the two or more same metals are two or more copper, the rate-determining step of etching with respect to copper is preferably a copper oxidation reaction.
【0017】さらに、上記2つ以上の銅がいずれも電気
銅めっきにより作製されていることが好ましい。電気銅
めっきにより2つ以上の銅を作製する場合、難溶性の銅
が硫酸銅めっき液を用いて作製され、易溶性の銅がピロ
リン酸銅めっき液を用いて作製されているか、または、
2つ以上の銅がいずれも硫酸銅めっき液を用いて作製さ
れ、かつ、易溶性の銅が難溶性の銅よりも高い電流密度
で作製されていることが好ましい。後者の場合、易溶性
の銅が5A/dm2以上の電流密度で作製され、かつ、
難溶性の銅が5A/dm2以下の電流密度で作製されて
いることがより好ましい。Further, it is preferable that both of the two or more coppers are produced by electrolytic copper plating. When two or more copper are produced by electrolytic copper plating, the sparingly soluble copper is produced using a copper sulfate plating solution, and the easily soluble copper is produced using a copper pyrophosphate plating solution, or
It is preferable that the two or more coppers are both produced using a copper sulfate plating solution, and that the easily soluble copper is produced at a higher current density than the sparingly soluble copper. In the latter case, easily soluble copper is produced with a current density of 5 A / dm 2 or more, and
It is more preferable that the refractory copper is produced at a current density of 5 A / dm 2 or less.
【0018】以上のような本発明の第1の特徴によれ
ば、製法の異なる2つ以上の同種金属のそれぞれのエッ
チング速度を同時にコントロールすることができるた
め、これらの選択的エッチングが可能となる。According to the first feature of the present invention as described above, since it is possible to simultaneously control the respective etching rates of two or more same metals produced by different manufacturing methods, it is possible to selectively etch them. .
【0019】さらに、本発明は、内層回路基板上に給電
層或いは給電層の一部として易溶性金属層を形成する工
程、易溶性金属層上にパターン電気めっきレジストを形
成した後、電気めっきにより易溶性金属と製法の異なる
同種金属である難溶性金属層を形成する工程、および、
パターン部以外の前記易溶性金属層を、前述のエッチン
グ方法により、選択的にエッチング除去する工程、を少
なくとも有するプリント配線板の製造方法を第2の特徴
としている。Further, according to the present invention, a step of forming an easily soluble metal layer as an electricity supply layer or a part of the electricity supply layer on an inner layer circuit board, a pattern electroplating resist is formed on the easily soluble metal layer, and then electroplating is performed. A step of forming a refractory metal layer which is the same kind of metal with a manufacturing method different from that of an easily soluble metal; and
A second characteristic is a method for manufacturing a printed wiring board, which has at least a step of selectively etching and removing the easily soluble metal layer other than the pattern portion by the above-described etching method.
【0020】本発明の第2の特徴において、易溶性金属
層が銅箔および/または銅箔上に形成される無電解銅め
っき層である場合、上記銅箔の厚みが1〜5μmである
こと、また上記無電解銅めっき層の厚みが0.1〜1μ
m以下であることが好ましい。また、難溶性金属層は電
気銅めっき層であってもよい。In the second feature of the present invention, when the easily soluble metal layer is a copper foil and / or an electroless copper plating layer formed on the copper foil, the thickness of the copper foil is 1 to 5 μm. The thickness of the electroless copper plating layer is 0.1 to 1 μm.
It is preferably m or less. The poorly soluble metal layer may be an electrolytic copper plating layer.
【0021】さらに、銅箔がピロリン酸銅めっき液を用
いて作製され、かつ電気銅めっき層が硫酸銅めっき液を
用いて作製されていること、または、銅箔および電気銅
めっき層がいずれも硫酸銅めっき液を用いて作製され、
かつ電気めっき時の電流密度が銅箔作製時の電流密度よ
りも低いことが好ましく、後者の場合、銅箔が5A/d
m2以上の電流密度で作製されており、かつ電気銅めっ
き層が5A/dm2以下の電流密度で作製されているこ
とがより好ましい。Further, the copper foil is produced using a copper pyrophosphate plating solution and the electrolytic copper plating layer is produced using a copper sulfate plating solution, or both the copper foil and the electrolytic copper plating layer are produced. Made using copper sulfate plating solution,
In addition, the current density during electroplating is preferably lower than the current density during copper foil production. In the latter case, the copper foil has a current density of 5 A / d.
More preferably, the current density is m 2 or more, and the electrolytic copper plating layer is 5 A / dm 2 or less.
【0022】さらに、本発明の第2の特徴において、内
層回路基板に層間接続のためのIVH(インタースティ
シャルバイアホール)を形成する工程、または、内層回
路基板と易溶性金属層の間にプリプレグを積層する工程
をさらに有していても良く、さらには、電気めっきレジ
ストを除去後、酸化剤により配線基板表面を洗浄する工
程を有してもよく、この場合、酸化剤が過マンガン酸塩
を有することがより好ましい。Further, in the second aspect of the present invention, a step of forming an IVH (interstitial via hole) for interlayer connection in the inner layer circuit board, or a prepreg between the inner layer circuit board and the easily soluble metal layer. May further have a step of laminating, and further, after removing the electroplating resist, it may have a step of washing the surface of the wiring board with an oxidizing agent, in which case the oxidizing agent is permanganate. It is more preferable to have
【0023】以上のような、本発明の第2の特徴によれ
ば、パターン部以外の金属が素早く除去され、導体回路
のトップ幅の著しい減少は抑制されることとなり、回路
形成性のよいプリント配線板を製造することが可能とな
る。According to the second feature of the present invention as described above, the metal other than the pattern portion is quickly removed, and the remarkable reduction of the top width of the conductor circuit is suppressed, and the print having good circuit formability is suppressed. It becomes possible to manufacture a wiring board.
【0024】以下、本発明を詳細に説明する。The present invention will be described in detail below.
【0025】[0025]
【発明の実施の形態】本発明に用いることのできるエッ
チング液としては、製法の異なる2つ以上の同種金属に
対するエッチングの律速段階が反応過程となるようなエ
ッチング液であればよい。例えば、金属の酸化反応がエ
ッチングの律速段階である系の場合、酸化剤の濃度によ
り容易にエッチング速度をコントロールすることができ
る。この場合、ハロゲン元素を含まない酸と過酸化水素
を主成分とするエッチング液を用いることが好ましい。
ハロゲン元素を含まない酸としては、硝酸、硫酸などが
使用できるが、硫酸である事が安価で好ましい。さら
に、硫酸と過酸化水素が主成分である場合には、それぞ
れの濃度を5〜300g/L、5〜200g/Lとする
ことがエッチング速度、液の安定性の面から好ましい。BEST MODE FOR CARRYING OUT THE INVENTION As an etching solution which can be used in the present invention, any etching solution can be used so that the rate-determining step of etching with respect to two or more same metals produced by different manufacturing processes becomes a reaction process. For example, in a system in which the metal oxidation reaction is the rate-determining step of etching, the etching rate can be easily controlled by the concentration of the oxidizing agent. In this case, it is preferable to use an etching solution containing an acid containing no halogen element and hydrogen peroxide as main components.
As the acid containing no halogen element, nitric acid, sulfuric acid or the like can be used, but sulfuric acid is preferable because it is inexpensive. Further, when sulfuric acid and hydrogen peroxide are the main components, it is preferable that the respective concentrations are 5 to 300 g / L and 5 to 200 g / L from the viewpoint of etching rate and liquid stability.
【0026】さらに、本発明に用いるエッチング液は上
記主成分に加えて溶媒、添加剤を含み、溶媒としては、
コスト、取り扱い性、安全性の面から水が好ましく用い
られ、水にはアルコール等が添加されていても構わな
い。また、添加剤としては過酸化水素の安定剤等が添加
されうる。Further, the etching liquid used in the present invention contains a solvent and an additive in addition to the above main components, and the solvent is
Water is preferably used in terms of cost, handleability, and safety, and alcohol may be added to water. Further, a stabilizer of hydrogen peroxide or the like may be added as an additive.
【0027】さらに、エッチング時のエッチング液の液
温は、エッチング速度の違いが2つ以上の同種金属の溶
解時の活性化エネルギーの差から生じるものであるか
ら、低温であることが好ましい。しかしながらあまりに
も低温であると作業性が著しく低下するので、好ましく
は20〜50℃の範囲である。Further, the temperature of the etching liquid during etching is preferably low because the difference in etching rate is caused by the difference in activation energy during dissolution of two or more same metals. However, if the temperature is too low, the workability is remarkably reduced, so that the temperature is preferably in the range of 20 to 50 ° C.
【0028】また、本発明において、エッチングの対象
となる2つ以上の同種金属は、例えば、銅、金、等のプ
リント配線板によく使用される金属が好ましく挙げられ
るが、この他にも銀、亜鉛、クロム、スズ等にも適用す
ることができ、特に限定されない。また、その作製方法
としては、2つ以上の同種金属のうち、それぞれの製法
が異なり、それぞれの結晶の大きさ、方向性が異なるも
のを得ることができるのであれば、還元、めっき析出等
の一般的な方法でよく、限定されない。例えば、2つ以
上の同種金属がいずれも電気銅めっきで作製される場
合、ピロリン酸銅めっきで作製された電気銅めっきは硫
酸銅めっきで作製した電気銅めっきに比べ結晶が小さ
く、上記のようなエッチング液に溶けやすいといった特
徴があるためにエッチング速度差を出すことが容易であ
る。また、両者が共に硫酸銅めっきで作製した電気銅め
っきである場合、高電流密度で作製した電気銅めっきは
低電流密度で作製した電気銅めっきに比べ結晶が小さ
く、上記のようなエッチング液に溶けやすいといった特
徴があるために、この場合もエッチング速度差を出すこ
とが容易であり、好ましくは易溶性の銅が5A/dm2
以上の電流密度であり、難溶性の銅が5A/dm2以下
の電流密度である。In the present invention, the two or more similar metals to be etched are preferably metals such as copper and gold, which are often used in printed wiring boards, but silver is also used. It can also be applied to zinc, chromium, tin, etc. and is not particularly limited. In addition, as a method for producing the same, if two or more similar metals having different production methods and different crystal sizes and different directivities can be obtained, reduction, plating precipitation, etc. A general method may be used without limitation. For example, when two or more similar metals are both produced by electrolytic copper plating, the electrolytic copper plating produced by copper pyrophosphate plating has a smaller crystal than the electrolytic copper plating produced by copper sulfate plating. It is easy to make a difference in etching rate because it has a characteristic that it is easily dissolved in various etching solutions. Further, when both are electrolytic copper plating produced by copper sulfate plating, the electrolytic copper plating produced at a high current density has a smaller crystal than the electrolytic copper plating produced at a low current density, and thus the etching solution as described above is used. In this case as well, it is easy to obtain a difference in etching rate because of the characteristic that it is easily melted, and preferably 5 A / dm 2 of easily soluble copper is used.
The above current densities are such that the refractory copper has a current density of 5 A / dm 2 or less.
【0029】また、上記のようなエッチング液を用いて
上記のような製法の異なる2つ以上の同種金属を同時に
エッチングした場合、それぞれの金属間でエッチング速
度に差が生じれば、本発明による選択的エッチングが為
されたということができるが、選択的エッチングの効果
をはっきり認識するためには、難溶性の金属の易溶性に
対するエッチング速度が80%以下であることが好まし
い。Further, when two or more metals of the same kind which are manufactured by different methods as described above are simultaneously etched using the above-mentioned etching solution, if there is a difference in etching rate between the respective metals, the present invention is used. It can be said that the selective etching is performed, but in order to clearly recognize the effect of the selective etching, it is preferable that the etching rate with respect to the easy solubility of the hardly soluble metal is 80% or less.
【0030】以下には、上記エッチング方法を用いたプ
リント配線基板の製造方法の一実施例を図1を用いて詳
細に説明する。An embodiment of a method of manufacturing a printed wiring board using the above etching method will be described in detail below with reference to FIG.
【0031】まず、絶縁基材を加工して内層回路基板を
作製する。絶縁基材表面への導体回路の形成は、銅張積
層板をエッチングして行うサブトラクティブ法が一般的
であるが、特に限定されない。さら絶縁基材にスルーホ
ール等の貫通孔を形成し、内層導体回路を形成し、内層
回路基板を得る。図1(a)では単層の両面板である
が、この内層回路基板は多層板でもよい。First, the insulating base material is processed to produce an inner layer circuit board. The conductive circuit is formed on the surface of the insulating substrate by a subtractive method generally performed by etching a copper clad laminate, but is not particularly limited. Further, a through hole such as a through hole is formed in the insulating base material, an inner layer conductor circuit is formed, and an inner layer circuit board is obtained. Although the single-layer double-sided board is shown in FIG. 1A, the inner layer circuit board may be a multi-layered board.
【0032】次に内層回路基板の表面の内層銅パターン
を粗面化し、この銅パターンの上に形成される層間樹脂
絶縁層との密着性を向上させる必要がある。具体的には
内層銅パターンの上に針状の無電解めっきを形成する方
法や内層銅パターンを酸化(黒化)―還元処理する方
法、内層銅パターンをエッチングする方法等がある。Next, it is necessary to roughen the inner layer copper pattern on the surface of the inner layer circuit board to improve the adhesion to the interlayer resin insulation layer formed on this copper pattern. Specifically, there are a method of forming needle-shaped electroless plating on the inner layer copper pattern, a method of oxidizing (blackening) -reducing the inner layer copper pattern, a method of etching the inner layer copper pattern, and the like.
【0033】次に、上記のようにして得られた内層回路
基板上に図1(b)に示す様に銅箔付層間絶縁樹脂をラ
ミネートする。層間絶縁樹脂としてはエポキシ系樹脂や
ポリイミド系樹脂を主成分として含むものが好ましい
が、他にもアクリル樹脂、ポリイミド樹脂、ベンゾシク
ロブテン樹脂、フッ素樹脂、シアネート樹脂、PPE等
や、その含有物でもよい。銅箔付層間絶縁樹脂をラミネ
ートとするかわりにプリプレグを介して銅箔を積層して
もよい。層間樹脂絶縁層の厚みは10から100μm程
度、望ましくは20から60μmがよく、銅箔の厚みは
1〜5μmが好適である。銅箔の粗化面にはクロメート
処理等密着促進の為の異種金属処理が施されていてもよ
い。また、ここで用いる銅箔は、好ましくは電流密度5
A/dm2以上の電流密度により硫酸銅めっきで作製さ
れていること、若しくはピロリン酸銅めっきで作製され
ていることが好ましい。上記銅箔は結晶が小さく、エッ
チングされやすいために後の回路形成上有利になる。Next, an interlayer insulating resin with a copper foil is laminated on the inner layer circuit board obtained as described above as shown in FIG. 1 (b). It is preferable that the interlayer insulating resin contains an epoxy resin or a polyimide resin as a main component, but in addition, an acrylic resin, a polyimide resin, a benzocyclobutene resin, a fluororesin, a cyanate resin, PPE, or the like, or a substance containing them. Good. Instead of laminating the interlayer insulating resin with copper foil, the copper foil may be laminated via a prepreg. The thickness of the interlayer resin insulation layer is about 10 to 100 μm, preferably 20 to 60 μm, and the thickness of the copper foil is preferably 1 to 5 μm. The roughened surface of the copper foil may be treated with a dissimilar metal such as a chromate treatment for promoting adhesion. The copper foil used here preferably has a current density of 5
It is preferable that it is made by copper sulfate plating or is made by copper pyrophosphate plating with a current density of A / dm 2 or more. Since the copper foil has small crystals and is easily etched, it is advantageous in later circuit formation.
【0034】次いで図1(c)に示す様に銅箔の上から
層間樹脂絶縁層にIVHを形成する。IVHを形成する
方法としては、レーザーを用いるのが好適である。ここ
で用いることが出来るレーザーとしては、CO2やC
O、エキシマ等の気体レーザーやYAG等の固体レーザ
ーがある。CO2レーザーは容易に大出力を得られる事
からφ50μm以上のIVHの加工に適している。φ5
0μm以下の微細なIVHを加工する場合は、より短波
長で集光性のよいYAGレーザーが適している。Next, as shown in FIG. 1 (c), IVH is formed on the interlayer resin insulation layer from above the copper foil. A laser is suitable as a method for forming IVH. Lasers that can be used here include CO 2 and C
There are gas lasers such as O and excimers, and solid-state lasers such as YAG. The CO 2 laser is suitable for processing IVH having a diameter of 50 μm or more because it can easily obtain a large output. φ5
When processing a fine IVH of 0 μm or less, a YAG laser having a shorter wavelength and good focusing property is suitable.
【0035】次いで過マンガン酸塩、クロム酸塩、クロ
ム酸のような酸化剤を用いてIVH内部の樹脂残さの除
去を行う。Next, the resin residue inside the IVH is removed by using an oxidizing agent such as permanganate, chromate or chromic acid.
【0036】次いで銅箔上及びIVH内部に触媒核を付
与する。触媒核の付与には、貴金属イオンやパラジウム
コロイドを使用する。特にパラジウムコロイドを使用す
るのが安価で好ましい。Next, catalyst nuclei are provided on the copper foil and inside the IVH. Noble metal ions or palladium colloids are used to provide the catalyst nuclei. In particular, it is preferable to use palladium colloid because it is inexpensive.
【0037】次に図1(d)に示すように、触媒核を付
与した銅箔上及びIVH内部に薄付けの無電解めっき層
を形成する。この無電解めっきには、硫酸銅、ホルマリ
ン、錯化剤、水酸化ナトリウム等を主成分とする市販の
ものが使用でき、例えば、CUST2000(日立化成
工業株式会社製、商品名)やCUST201(日立化成
工業株式会社製、商品名)等が挙げられるが、特に限定
されるものではない。めっきの厚さは次の電気銅めっき
を行うことができる厚さであればよく、好ましくは0.
1〜1μmである。Next, as shown in FIG. 1D, a thin electroless plating layer is formed on the copper foil to which the catalyst nuclei have been applied and inside the IVH. For this electroless plating, commercially available products containing copper sulfate, formalin, a complexing agent, sodium hydroxide and the like as main components can be used. For example, CUST2000 (manufactured by Hitachi Chemical Co., Ltd., trade name) or CUST201 (Hitachi) Kasei Kogyo Co., Ltd., trade name) and the like, but are not particularly limited. The thickness of the plating may be any thickness as long as the following electrolytic copper plating can be performed, and is preferably 0.
It is 1 to 1 μm.
【0038】次に図1(e)に示すように無電解めっき
層上のIVH上と導体回路となる以外の個所に電気めっ
きレジストを形成する。電気めっきレジストの厚さは、
その後めっきする導体の厚さと同程度か、より厚い膜厚
にするのが好適である。電気めっきレジストに使用でき
る樹脂には、PMER P−LA900PM(東京応化
株式会社製、商品名)のような液状レジストや、HW−
425(日立化成工業株式会社、商品名)、RY−30
25(日立化成工業株式会社、商品名)等のドライフィ
ルムがある。Next, as shown in FIG. 1 (e), an electroplating resist is formed on the IVH on the electroless plating layer and on the portions other than the conductor circuit. The thickness of the electroplating resist is
It is preferable to make the film thickness as thick as or thicker than the conductor to be plated thereafter. Resins that can be used for the electroplating resist include liquid resist such as PMER P-LA900PM (trade name of Tokyo Ohka Co., Ltd.) and HW-.
425 (Hitachi Chemical Co., Ltd., trade name), RY-30
There are dry films such as 25 (Hitachi Chemical Co., Ltd., trade name).
【0039】次に図1(f)に示すように導体回路パタ
ーンとなる電気銅めっき層を形成する。電気銅めっきに
は、通常プリント配線板で使用される硫酸銅電気めっき
等が使用できる。電気銅めっきの厚さは、導体回路とし
て使用できればよく、1〜100μmの範囲であること
が好ましく、5〜50μmの範囲であることがより好ま
しい。また、電気銅めっき層形成時の電流密度は上記銅
箔作製時の電流密度よりも小さいことが好ましく、5A
/dm2以下であることがより好ましい。電気銅めっき
層形成時の電流密度が銅箔作製時の電流密度よりも高い
と後のエッチング工程で過剰に溶解されやすくなってし
まい良好な回路形成を為すのに支障をきたす場合があ
る。Next, as shown in FIG. 1F, an electrolytic copper plating layer to be a conductor circuit pattern is formed. For copper electroplating, copper sulfate electroplating or the like which is usually used in printed wiring boards can be used. The thickness of the electrolytic copper plating is sufficient if it can be used as a conductor circuit, and is preferably in the range of 1 to 100 μm, more preferably in the range of 5 to 50 μm. Further, the current density at the time of forming the electrolytic copper plating layer is preferably smaller than the current density at the time of producing the copper foil, and 5 A
/ Dm 2 or less is more preferable. If the current density at the time of forming the electrolytic copper plating layer is higher than the current density at the time of forming the copper foil, it is likely to be excessively dissolved in a subsequent etching step, which may hinder the formation of a good circuit.
【0040】次にアルカリ性剥離液や硫酸あるいは市販
のレジスト剥離液を用いて電気めっきレジストの剥離を
行う。Next, the electroplating resist is stripped using an alkaline stripping solution, sulfuric acid or a commercially available resist stripping solution.
【0041】次に好ましくは過マンガン酸塩を有する酸
化剤を用いて基板表面の洗浄を行う。この時点では銅箔
が残っているために酸化剤により絶縁層が痛むことはな
い。基板表面を酸化剤で洗浄することで、レジスト等の
有機物残さを完全に除去することが出来る。Next, the surface of the substrate is washed, preferably with an oxidizing agent containing permanganate. Since the copper foil remains at this point, the insulating layer is not damaged by the oxidizing agent. By cleaning the surface of the substrate with an oxidizing agent, it is possible to completely remove organic residues such as resist.
【0042】次にパターン部以外の銅を前述したエッチ
ング方法、すなわちエッチングの律速段階が反応過程と
なるようなエッチング液を用いて除去することで回路形
成が終了する(図1(g))。好ましくはハロゲン元素
を含まない酸及び過酸化水素を主成分とするエッチング
液を用い、より好ましくは、ハロゲン元素を含まない酸
として硫酸を用いる。この場合、エッチング液の主成分
の濃度として、10〜300g/Lの硫酸および10〜
200g/Lの過酸化水素水を用いることが好ましい。
上記濃度域以下の濃度ではエッチング速度が遅いために
作業性が低下し、上記濃度域以上の濃度ではエッチング
速度が速いためにエッチング量のコントロールが難し
い。Next, the circuit formation is completed by removing the copper other than the pattern portion by the above-mentioned etching method, that is, by using an etching solution in which the rate-determining step of the etching is the reaction process (FIG. 1 (g)). An etchant containing a halogen element-free acid and hydrogen peroxide as a main component is preferably used, and more preferably sulfuric acid is used as a halogen-element-free acid. In this case, the concentration of the main component of the etching solution is 10 to 300 g / L of sulfuric acid and 10 to 300 g / L.
It is preferable to use 200 g / L of hydrogen peroxide solution.
If the concentration is lower than the above concentration range, the workability is deteriorated because the etching rate is slow, and if the concentration is higher than the above concentration range, the etching rate is fast, and it is difficult to control the etching amount.
【0043】さらに、パターン部以外の銅をエッチング
除去し、設計通りの導体回路のトップ幅、ボトム幅を得
るためには電気銅めっきのエッチング速度が銅箔のエッ
チング速度の80%以下であることが好ましい。また、
銅箔のエッチング速度としては1〜15μm/分となる
ようにコントロールすることが作業性の面から好まし
い。また、結晶構造の差異によるエッチング速度の差は
エッチング液の温度に依存するため、エッチング除去の
際のエッチング液の温度は20〜50℃とすることが好
ましく、20〜40℃とすることがより好ましい。さら
にエッチング時間としては、所望の導体回路幅が形成さ
れるような時間を実験により適宜求めればよいが、作業
性、エッチングの均一性等のために10秒〜10分の範
囲であることが好ましい。Further, in order to obtain the top width and the bottom width of the conductor circuit as designed by removing the copper except the pattern portion, the etching rate of the electrolytic copper plating is 80% or less of the etching rate of the copper foil. Is preferred. Also,
From the viewpoint of workability, it is preferable to control the etching rate of the copper foil so as to be 1 to 15 μm / min. Further, since the difference in etching rate due to the difference in crystal structure depends on the temperature of the etching solution, the temperature of the etching solution at the time of etching removal is preferably 20 to 50 ° C, and more preferably 20 to 40 ° C. preferable. Further, as the etching time, a time for forming a desired conductor circuit width may be appropriately obtained by an experiment, but it is preferably in the range of 10 seconds to 10 minutes for workability, etching uniformity, and the like. .
【0044】さらに、上記で形成された導体回路パター
ン上に金めっき処理を行うことも出来る(図1
(h))。金めっき層の形成方法としては、SA―10
0(日立化成工業株式会社製、商品名)のような活性化
処理液で導体回路界面の活性化処理を行った後、NIP
S―100(日立化成工業株式会社製、商品名)のよう
な無電解ニッケルめっき液により1〜10μm程度のニ
ッケル層を形成し、このニッケル層の上面にHGS―1
00(日立化成工業株式会社製、商品名)のような置換
金めっき液により0.01〜0.1μm程度の金めっき
下地層を形成し、さらにその上面にHGS―2000
(日立化成工業株式会社製、商品名)のような無電解金
めっき液により0.1〜1μm程度の金めっき仕上げ層
を形成する方法が挙げられるが、もちろんこれに限定さ
れず、通常行われうる金めっき処理に適した方法であれ
ばよい。Further, a gold plating process can be performed on the conductor circuit pattern formed as described above (see FIG. 1).
(H)). As a method for forming the gold plating layer, SA-10
NIP after activating the conductor circuit interface with an activating liquid such as 0 (trade name, manufactured by Hitachi Chemical Co., Ltd.)
A nickel layer of about 1 to 10 μm is formed by an electroless nickel plating solution such as S-100 (trade name, manufactured by Hitachi Chemical Co., Ltd.), and HGS-1 is formed on the upper surface of the nickel layer.
A gold plating base layer having a thickness of about 0.01 to 0.1 μm is formed by a displacement gold plating solution such as 00 (trade name, manufactured by Hitachi Chemical Co., Ltd.), and HGS-2000 is further formed on the top surface thereof.
(Hitachi Kasei Kogyo Co., Ltd., trade name) may be used to form a gold plating finish layer having a thickness of about 0.1 to 1 μm with an electroless gold plating solution. Any method suitable for the gold plating treatment can be used.
【0045】以下、実施例により本発明をさらに詳細に
説明する。なお、実施例および比較例で製造する基板の
導体回路の設計値は、トップ幅30μm、ボトム幅30
μm、スペース幅30μm、導体回路のトップ幅および
ボトム幅の設計値からの乖離値を±2μm以下とした。Hereinafter, the present invention will be described in more detail with reference to examples. The design values of the conductor circuits of the substrates manufactured in the examples and comparative examples are 30 μm for the top width and 30 for the bottom width.
μm, space width 30 μm, and deviation values from the design values of the top width and the bottom width of the conductor circuit were ± 2 μm or less.
【0046】[0046]
【実施例】実施例1
図1(a)に示すように、絶縁基材に、厚さ18μmの
銅箔を両面に貼り合わせた厚さ0.2mmのガラス布基
材エポキシ銅張積層板であるMCL−E−679(日立
化成工業株式会社製、商品名)を用い、その不要な箇所
の銅箔をエッチング除去し、スルーホール12を形成し
て、内層導体回路10を形成し、内層回路基板11を作
製した。EXAMPLES Example 1 As shown in FIG. 1 (a), a glass cloth base material epoxy copper clad laminate having a thickness of 0.2 mm in which a copper foil having a thickness of 18 μm was attached to both surfaces of an insulating base material. Using a certain MCL-E-679 (trade name, manufactured by Hitachi Chemical Co., Ltd.), the copper foil in the unnecessary portion is removed by etching, the through hole 12 is formed, the inner layer conductor circuit 10 is formed, and the inner layer circuit is formed. The substrate 11 was produced.
【0047】内層回路基板11の内層導体回路10の処
理を、MEC etch BONDCZ−8100(メ
ック株式会社製、商品名)を用い、液温35℃、スプレ
ー圧0.15MPの条件で、スプレー噴霧処理し、銅表
面を粗面化して、粗さ3μm程度の凹凸を作り、MEC
etch BOND CL−8300(メック株式会
社製、商品名)を用いて、液温25℃、浸漬時間20秒
間の条件で浸漬して、銅表面に防錆処理を行った。The inner layer conductor circuit 10 of the inner layer circuit board 11 is treated by spraying using MEC etch BONDCZ-8100 (trade name of MEC Co., Ltd.) under the conditions of a liquid temperature of 35 ° C. and a spray pressure of 0.15 MP. Then, roughen the copper surface to make unevenness with a roughness of about 3 μm, and
Using ETCH BOND CL-8300 (trade name, manufactured by MEC Co., Ltd.), the copper surface was subjected to rust-prevention treatment by immersing the solution at a liquid temperature of 25 ° C. for an immersion time of 20 seconds.
【0048】図1(b)に示すように、内層回路基板1
1の両面に、10A/dm2の電流密度で作製した3μ
m銅箔13に接着剤を塗布したMCF−7000LX
(日立化成工業株式会社製、商品名)を、170℃、3
0kgf/cm2の条件で60分加熱加圧ラミネート
し、厚さ40μmの層間絶縁樹脂層14を形成した。As shown in FIG. 1B, the inner layer circuit board 1
3μ manufactured on both sides of No. 1 with a current density of 10 A / dm 2.
MCF-7000LX with adhesive applied to copper foil 13
(Hitachi Chemical Co., Ltd., trade name), 170 ℃, 3
The laminate was heated and pressed under a condition of 0 kgf / cm 2 for 60 minutes to form an interlayer insulating resin layer 14 having a thickness of 40 μm.
【0049】図1(c)に示すように、銅箔13上から
炭酸ガスインパクトレーザー穴あけ機L−500(住友
重機械工業株式会社製、商品名)により、直径80μm
の非貫通孔であるIVH15をあけ、過マンガン酸カリ
ウム65g/Lと水酸化ナトリウム40g/Lの混合水
溶液に、液温70℃で20分間浸漬し、スミアの除去を
行った。As shown in FIG. 1 (c), a diameter of 80 μm was measured from above the copper foil 13 using a carbon dioxide gas impact laser drilling machine L-500 (trade name, manufactured by Sumitomo Heavy Industries, Ltd.).
The non-penetrating holes of IVH15 were opened, and the smear was removed by immersing it in a mixed aqueous solution of potassium permanganate 65 g / L and sodium hydroxide 40 g / L at a liquid temperature of 70 ° C. for 20 minutes.
【0050】その後、パラジウム溶液であるHS−20
2B(日立化成工業株式会社製、商品名)に25℃で1
5分間浸漬し、触媒を付与した後、CUST−201
(日立化成工業株式会社製、商品名)を使用し、液温2
5℃、30分の条件で無電解銅めっきを行い、図1
(d)に示すように厚さ0.3μmの無電解銅めっき層
16を形成した。Then, HS-20, which is a palladium solution, is used.
2B (Hitachi Chemical Co., Ltd., trade name) 1 at 25 ° C
After soaking for 5 minutes and applying a catalyst, CUST-201
(Hitachi Chemical Co., Ltd., trade name), liquid temperature 2
Electroless copper plating was performed under the conditions of 5 ° C and 30 minutes.
As shown in (d), an electroless copper plating layer 16 having a thickness of 0.3 μm was formed.
【0051】図1(e)に示すように、ドライフィルム
フォトレジストであるRY−3025(日立化成工業株
式会社製、商品名)を、無電解めっき層16の表面にラ
ミネートし、電気銅めっきを行う箇所をマスクしたフォ
トマスクを介して紫外線を露光し、現像して電気めっき
レジスト17を形成した。As shown in FIG. 1E, a dry film photoresist RY-3025 (trade name, manufactured by Hitachi Chemical Co., Ltd.) is laminated on the surface of the electroless plating layer 16 and electrolytic copper plating is performed. The electroplating resist 17 was formed by exposing it to ultraviolet rays through a photomask which masked the portion to be performed and developing it.
【0052】図1(f)に示すように、硫酸銅浴を用い
て、液温25℃、電流密度1.0A/dm2の条件で、
電気銅めっきを20μmほど行い、回路導体幅/回路導
体間隔(L/S)=30/30μmとなるように電気銅
めっき層18を形成した。As shown in FIG. 1 (f), a copper sulfate bath was used under the conditions of a liquid temperature of 25 ° C. and a current density of 1.0 A / dm 2 .
Electrolytic copper plating was performed to about 20 μm, and the electrolytic copper plating layer 18 was formed so that the circuit conductor width / circuit conductor interval (L / S) = 30/30 μm.
【0053】次に図1(g)に示すように、レジスト剥
離液であるHTO(ニチゴー・モートン株式会社製、商
品名)で電気めっきレジスト17の除去を行った後に主
成分として硫酸20g/L、過酸化水素10g/Lの組
成のエッチング液を用いてパターン部以外の銅をエッチ
ング除去した。エッチング時は基板を片面1dm2の小
片に切断した後、1Lビーカーに入れ、マグネティック
スターラーを用いて40℃で5分間エッチングを行っ
た。Next, as shown in FIG. 1 (g), after removing the electroplating resist 17 with HTO (trade name, manufactured by Nichigo Morton Co., Ltd.), which is a resist stripping solution, 20 g / L of sulfuric acid as a main component was used. Copper other than the pattern portion was removed by etching using an etching solution having a composition of hydrogen peroxide of 10 g / L. At the time of etching, the substrate was cut into small pieces of 1 dm 2 on one side, placed in a 1 L beaker, and etched at 40 ° C. for 5 minutes using a magnetic stirrer.
【0054】最後に表1に示す条件で導体回路にNi/
Auめっき層19を形成した(図1(h))。Finally, Ni / was added to the conductor circuit under the conditions shown in Table 1.
An Au plating layer 19 was formed (FIG. 1 (h)).
【0055】[0055]
【表1】 [Table 1]
【0056】実施例2
電気銅めっきを3A/dm2の電流密度で行った他は実
施例1と同様に基板を作製した。Example 2 A substrate was prepared in the same manner as in Example 1 except that electrolytic copper plating was performed at a current density of 3 A / dm 2 .
【0057】実施例3
エッチング液の主成分の組成を硫酸20g/L、過酸化
水素40g/Lとし、エッチング時間を60秒とした他
は実施例1と同様に基板を作製した。Example 3 A substrate was prepared in the same manner as in Example 1 except that the composition of the main component of the etching liquid was sulfuric acid 20 g / L, hydrogen peroxide 40 g / L, and the etching time was 60 seconds.
【0058】実施例4
電気銅めっきを3A/dm2の電流密度で行った他は実
施例3と同様に基板を作製した。Example 4 A substrate was prepared in the same manner as in Example 3 except that electrolytic copper plating was performed at a current density of 3 A / dm 2 .
【0059】実施例5
エッチング液の主成分の組成を硫酸20g/L、過酸化
水素40g/Lとし、エッチング温度を30℃、エッチ
ング時間を100秒とした他は実施例1と同様に基板を
作製した。Example 5 A substrate was prepared in the same manner as in Example 1 except that the composition of the main component of the etching solution was 20 g / L of sulfuric acid and 40 g / L of hydrogen peroxide, the etching temperature was 30 ° C., and the etching time was 100 seconds. It was made.
【0060】実施例6
電気銅めっきを3A/dm2の電流密度で行った他は実
施例5と同様に基板を作製した。Example 6 A substrate was prepared in the same manner as in Example 5, except that electrolytic copper plating was performed at a current density of 3 A / dm 2 .
【0061】実施例7
エッチング液の主成分の組成を硝酸20g/L、過酸化
水素10g/Lとした他は実施例1と同様に基板を作製
した。Example 7 A substrate was prepared in the same manner as in Example 1 except that the composition of the main component of the etching liquid was nitric acid 20 g / L and hydrogen peroxide 10 g / L.
【0062】実施例8
エッチング液の主成分の組成を硫酸200g/L、過酸
化水素200g/Lとした他は実施例1と同様に基板を
作製した。Example 8 A substrate was prepared in the same manner as in Example 1 except that the main components of the etching solution were 200 g / L sulfuric acid and 200 g / L hydrogen peroxide.
【0063】実施例9
3μm銅箔をピロリン酸銅浴にて3A/dm2の電流密
度で作製し、パターン電気めっきを3A/dm2の電流
密度で行った他は実施例1と同様に基板を作製した。Example 9 A substrate was prepared in the same manner as in Example 1 except that a 3 μm copper foil was produced in a copper pyrophosphate bath at a current density of 3 A / dm 2 and pattern electroplating was performed at a current density of 3 A / dm 2. Was produced.
【0064】比較例1
エッチング液の主成分の組成を硫酸20g/L、過酸化
水素20g/Lとし、エッチング温度を60℃、エッチ
ング時間を100秒とした他は実施例1と同様に基板を
作製した。Comparative Example 1 A substrate was prepared in the same manner as in Example 1 except that the composition of the main components of the etching solution was 20 g / L of sulfuric acid and 20 g / L of hydrogen peroxide, the etching temperature was 60 ° C., and the etching time was 100 seconds. It was made.
【0065】比較例2
パターン部以外の銅のエッチングにFeCl3水溶液3
0g/Lを用いた他は実施例1と同様に基板を作成し
た。Comparative Example 2 FeCl 3 aqueous solution 3 was used for etching copper other than the pattern portion.
A substrate was prepared in the same manner as in Example 1 except that 0 g / L was used.
【0066】比較例3
パターン部以外の銅のエッチングにCuCl2水溶液4
0g/L、塩酸30g/Lを用いた他は実施例1と同様
に基板を作成した。Comparative Example 3 A CuCl 2 aqueous solution 4 was used for etching copper other than the pattern portion.
A substrate was prepared in the same manner as in Example 1 except that 0 g / L and 30 g / L hydrochloric acid were used.
【0067】比較例4
パターン部以外の銅のエッチングに塩化テトラアンミン
銅(II)を主成分とするAプロセス液(メルテックス
株式会社製、商品名)を用いて30℃で30秒間エッチ
ングを行った他は実施例1と同様に基板を作成した。Comparative Example 4 For etching copper other than the pattern portion, etching was carried out at 30 ° C. for 30 seconds using an A process liquid containing Tetraammine copper (II) chloride as a main component (trade name, manufactured by Meltex Co., Ltd.). A substrate was prepared in the same manner as in Example 1 except for the above.
【0068】比較例5
図2(a)に示すように、絶縁基材に、厚さ18μmの
銅箔を両面に貼り合わせた厚さ0.2mmのガラス布基
材エポキシ銅張り積層板であるMCL−E−679(日
立化成工業株式会社製、商品名)を用い、その不要な箇
所の銅箔をエッチング除去し、スルーホール22を形成
して、内層導体回路20を形成し、内層回路基板21を
作製した。Comparative Example 5 As shown in FIG. 2 (a), a glass cloth base material epoxy copper clad laminate having a thickness of 0.2 mm, in which a copper foil having a thickness of 18 μm was attached to both sides of an insulating base material. Using MCL-E-679 (manufactured by Hitachi Chemical Co., Ltd., trade name), the copper foil at unnecessary portions thereof is removed by etching, through holes 22 are formed, and an inner layer conductor circuit 20 is formed to form an inner layer circuit board. 21 was produced.
【0069】その内層回路基板21の内層導体回路20
の処理を、MEC etch BOND CZ−810
0(メック株式会社製、商品名)を用い、液温35℃、
スプレー圧0.15MPの条件で、スプレー噴霧処理
し、銅表面を粗面化して、粗さ3μm程度の凹凸を作
り、MEC etch BOND CL−8300(メ
ック株式会社製、商品名)を用いて、液温25℃、浸漬
時間20秒間の条件で浸漬して、銅表面に防錆処理を行
った。The inner layer conductor circuit 20 of the inner layer circuit board 21.
The process of MEC etch BOND CZ-810
0 (manufactured by MEC Co., Ltd., trade name) using a liquid temperature of 35 ° C.
Spraying treatment was performed under the condition of a spray pressure of 0.15 MP to roughen the copper surface to make irregularities having a roughness of about 3 μm, and using MEC etch BOND CL-8300 (manufactured by MEC Co., Ltd.), The copper surface was subjected to rust-prevention treatment by immersing it under the conditions of a liquid temperature of 25 ° C. and an immersion time of 20 seconds.
【0070】図2(b)に示すように、内層回路基板2
1の両面に、絶縁接着剤であるBL−9700(日立化
成工業株式会社製、商品名)を厚さ40μmに塗布し、
170℃で60分加熱し、層間絶縁樹脂層24を形成し
た。As shown in FIG. 2B, the inner layer circuit board 2
Insulating adhesive BL-9700 (manufactured by Hitachi Chemical Co., Ltd., trade name) is applied on both sides of No. 1 to a thickness of 40 μm,
By heating at 170 ° C. for 60 minutes, the interlayer insulating resin layer 24 was formed.
【0071】図2(c)に示すように、炭酸ガスインパ
クトレーザー穴あけ機L−500(住友重機械工業株式
会社製、商品名)により、直径80μmの非貫通孔であ
るIVH25をあけ、過マンガン酸カリウム65g/L
と水酸化ナトリウム40g/Lの混合水溶液に、液温7
0℃で20分間浸漬し、スミアの除去を行うと同時に表
面に微細な凹凸を作った。As shown in FIG. 2 (c), a carbon dioxide impact laser drilling machine L-500 (trade name, manufactured by Sumitomo Heavy Industries, Ltd.) was used to open IVH25, which is a non-through hole having a diameter of 80 μm, and permanganese. Potassium acid 65g / L
And a sodium hydroxide 40g / L mixed aqueous solution, liquid temperature 7
Immersion was carried out at 0 ° C. for 20 minutes to remove smears, and at the same time fine irregularities were formed on the surface.
【0072】次に、超音波洗浄装置PUC−0586
(東京超音波技研株式会社製、商品名)を用いて、洗浄
液イオン交換水、発信周波数25kHz、出力600W
の条件で5分間超音波処理を行い、基板表面の脆弱層の
除去を行った。Next, an ultrasonic cleaning device PUC-0586
(Tokyo Ultrasonic Giken Co., Ltd., trade name), cleaning liquid ion-exchanged water, transmission frequency 25 kHz, output 600 W
The ultrasonic treatment was carried out for 5 minutes under the conditions described above to remove the brittle layer on the substrate surface.
【0073】その後、パラジウム溶液であるHS−20
2B(日立化成工業株式会社製、商品名)に、25℃で
15分間浸漬し、触媒を付与した後、CUST−201
(日立化成工業株式会社製、商品名)を使用し、液温2
5℃、30分の条件で無電解銅めっきを行い、図2
(d)に示すように厚さ0.3μmの無電解銅めっき層
26を形成した。Then, HS-20, which is a palladium solution, is used.
2B (manufactured by Hitachi Chemical Co., Ltd., trade name) was immersed at 25 ° C. for 15 minutes to give a catalyst, and then CUST-201.
(Hitachi Chemical Co., Ltd., trade name), liquid temperature 2
Electroless copper plating was performed under the conditions of 5 ° C and 30 minutes.
As shown in (d), an electroless copper plating layer 26 having a thickness of 0.3 μm was formed.
【0074】図2(e)に示すように、ドライフィルム
フォトレジストであるRY−3025(日立化成工業株
式会社製、商品名)を、無電解銅めっき層26の表面に
ラミネートし、電気銅めっきを行う箇所をマスクしたフ
ォトマスクを介して紫外線を露光し、現像して電気めっ
きレジスト27を形成した。As shown in FIG. 2E, a dry film photoresist, RY-3025 (trade name, manufactured by Hitachi Chemical Co., Ltd.) is laminated on the surface of the electroless copper plating layer 26, and electrolytic copper plating is performed. The electroplating resist 27 was formed by exposing the film to ultraviolet rays through a photomask that masked the areas where the above steps were performed and developing it.
【0075】図2(f)に示すように、硫酸銅浴を用い
て、液温度25℃、電流密度1.0A/dm2の条件
で、電気銅めっきを20μmほど行い、回路導体層/回
路導体間隔(L/S)=30/30μmとなるように電
気銅めっき層28を形成した。As shown in FIG. 2 (f), electrolytic copper plating was carried out for about 20 μm using a copper sulfate bath under the conditions of a liquid temperature of 25 ° C. and a current density of 1.0 A / dm 2. The electrolytic copper plating layer 28 was formed so that the conductor spacing (L / S) was 30/30 μm.
【0076】次に、図2(g)に示すように、レジスト
剥離液であるHTO(ニチゴー・モートン株式会社製、
商品名)で電気めっきレジスト27の除去を行った後、
主成分として硫酸20g/L、過酸化水素10g/Lの
組成のエッチング液を用いてパターン部以外の銅をエッ
チング除去した。エッチング時は基板を片面1dm2の
小片に切断した後、1Lビーカーに入れ、40℃まで加
温した後マグネティックスターラーにて1分間エッチン
グを行った。Next, as shown in FIG. 2 (g), a resist stripper HTO (manufactured by Nichigo Morton Co., Ltd.,
After removing the electroplating resist 27 with the product name),
Copper other than the pattern portion was removed by etching using an etching solution having a composition of sulfuric acid 20 g / L and hydrogen peroxide 10 g / L as main components. At the time of etching, the substrate was cut into small pieces of 1 dm 2 on one side, placed in a 1 L beaker, heated to 40 ° C., and then etched for 1 minute with a magnetic stirrer.
【0077】最後に、図2(h)に示すように実施例1
と同様の手法でNi/Auめっき層29を形成すること
で基板を作製した。Finally, as shown in FIG. 2H, Example 1
A substrate was produced by forming the Ni / Au plated layer 29 by the same method as described in (1).
【0078】比較例6
パターン部以外の銅のエッチングにFeCl3水溶液3
0g/Lを用いた他は比較例5と同様に基板を作成し
た。Comparative Example 6 FeCl 3 aqueous solution 3 was used for etching copper other than the pattern portion.
A substrate was prepared in the same manner as Comparative Example 5 except that 0 g / L was used.
【0079】比較例7
パターン部以外の銅のエッチングにCuCl2水溶液4
0g/L、塩酸30g/Lを用いた他は比較例5と同様
に基板を作成した。Comparative Example 7 A CuCl 2 aqueous solution 4 was used for etching copper other than the pattern portion.
A substrate was prepared in the same manner as in Comparative Example 5 except that 0 g / L and hydrochloric acid 30 g / L were used.
【0080】比較例8
パターン部以外の銅のエッチングに塩化テトラアンミン
銅(II)を主成分とするAプロセス液(メルテックス
株式会社製、商品名)を用いて30℃で30秒間エッチ
ングを行った他は比較例5と同様に基板を作成した。Comparative Example 8 For etching copper except for the pattern portion, etching was carried out at 30 ° C. for 30 seconds using an A process liquid containing Tetraammine copper (II) chloride as a main component (manufactured by Meltex Co., Ltd.). A substrate was prepared in the same manner as in Comparative Example 5 except for the above.
【0081】比較例9
エッチング液の主成分の組成を塩酸40g/L、過酸化
水素10g/Lとした他は実施例1と同様に基板を作製
した。Comparative Example 9 A substrate was prepared in the same manner as in Example 1 except that the composition of the main component of the etching liquid was hydrochloric acid 40 g / L and hydrogen peroxide 10 g / L.
【0082】比較例10
エッチング液の主成分の組成を硫酸3g/L、過酸化水
素3g/Lとした他は実施例1と同様に基板を作製し
た。Comparative Example 10 A substrate was manufactured in the same manner as in Example 1 except that the composition of the main components of the etching liquid was sulfuric acid 3 g / L and hydrogen peroxide 3 g / L.
【0083】比較例11
銅箔作製時の電流密度を5A/dm2、電気銅めっき時
の電流密度を7A/dm2とした他は実施例1と同様に
基板を作製した。Comparative Example 11 A substrate was prepared in the same manner as in Example 1 except that the current density during copper foil preparation was 5 A / dm 2 and the current density during electrolytic copper plating was 7 A / dm 2 .
【0084】実施例1〜9、比較例1〜11で作製した
基板の導体トップ幅、導体ボトム幅、回路間エッチング
残り、回路間Auめっき析出を評価した結果を表2に示
す。回路間エッチング残りや回路間Auめっき析出は図
4のように回路からすそをひくような形状で発生するこ
とが多い。そこで、回路間のトップとボトムの差を2で
割った値をすその長さとし、この値が5μm以上であれ
ば回路間エッチング残りありとした(回路間Auめっき
析出の測定方法も同様)。導体および回路間のトップ幅
およびボトム幅は基板を光学顕微鏡で上部から撮影し、
画像処理を行ったデータをもとに任意に20点測定し、
平均を算出したものである。Table 2 shows the evaluation results of the conductor top width, conductor bottom width, inter-circuit etching residue and inter-circuit Au plating deposition of the substrates prepared in Examples 1 to 9 and Comparative Examples 1 to 11. Inter-circuit etching residue and inter-circuit Au plating deposition often occur in a shape that draws a skirt from the circuit as shown in FIG. Therefore, the value obtained by dividing the difference between the top and the bottom between the circuits by 2 was taken as the soot length, and if this value was 5 μm or more, there was etching residue between the circuits (the same applies to the method of measuring Au plating deposition between the circuits). The top width and bottom width between the conductor and the circuit are taken from the top of the board with an optical microscope,
20 points are arbitrarily measured based on the image processed data,
It is an average calculated.
【0085】また、回路導体幅/回路導体間隔(L/
S)=20/20となるように電気めっき層を形成した
以外は実施例1と同条件で作製した基板、およびL/S
=20/20となるように電気めっき層を形成した以外
は比較例2と同条件で作製した基板のSEM画像をそれ
ぞれ図5および図6に示す。Further, circuit conductor width / circuit conductor interval (L /
S) = 20/20 A substrate manufactured under the same conditions as in Example 1 except that the electroplating layer was formed, and L / S
5 and 6 show SEM images of the substrate prepared under the same conditions as in Comparative Example 2 except that the electroplating layer was formed so as to be 20/20.
【0086】[0086]
【表2】 [Table 2]
【0087】実施例1〜9で作製した基板は、ほぼ設計
値通り(トップ幅30μm、ボトム幅30μm、スペー
ス幅30μm、導体回路のトップ幅およびボトム幅の設
計値からの乖離値;±2μm以下)に仕上がっており、
トップ幅とボトム幅の差もほとんどなく、導体回路のト
ップ幅およびボトム幅の設計値からの乖離値を±2μm
以下とすることができ、回路形成性は良好であった。一
方、比較例1は、エッチング液の温度を高めに設定した
ために銅箔と導体回路のエッチング速度にほとんど差が
生じず、導体回路が設計値以上にエッチングされてしま
った。比較例2〜4、6〜9は拡散律速性エッチング液
を使っているので液当たりのよい導体トップの部分が過
剰に溶解されてしまい、回路間エッチング残り、回路間
Auめっき析出が発生しやすいことが分かった。比較例
5はPd除去が不十分になりやすく回路間Auめっき析
出が発生しやすいことが分かった。比較例10は、エッ
チング液の主成分濃度が薄いため設計値通りに回路形成
されるまでのエッチング時間が長くなってしまった。比
較例11は、電気銅めっき時の電流密度が銅箔作製時の
電流密度の値より大きいためにパターン部以外の銅と導
体トップ部分のエッチング速度に殆ど差が生じず、導体
回路が設計値以上にエッチングされてしまった。The substrates manufactured in Examples 1 to 9 were almost as designed (top width 30 μm, bottom width 30 μm, space width 30 μm, deviation value from design value of conductor circuit top width and bottom width; ± 2 μm or less) ) Is finished,
There is almost no difference between the top width and the bottom width, and the deviation of the top and bottom widths of the conductor circuit from the design value is ± 2 μm.
The following were possible and the circuit formability was good. On the other hand, in Comparative Example 1, since the temperature of the etching solution was set high, there was almost no difference in the etching rate between the copper foil and the conductor circuit, and the conductor circuit was etched more than the design value. Since Comparative Examples 2 to 4 and 6 to 9 use the diffusion-controlling etching solution, the conductor top portion having a good liquid contact is excessively dissolved, and the inter-circuit etching remains and the inter-circuit Au plating deposition is likely to occur. I found out. It was found that in Comparative Example 5, Pd removal was likely to be insufficient and inter-circuit Au plating deposition was likely to occur. In Comparative Example 10, since the main component concentration of the etching solution was low, the etching time until the circuit was formed according to the design value was long. In Comparative Example 11, since the current density at the time of copper electroplating was larger than the current density at the time of producing the copper foil, there was almost no difference between the etching rates of the copper other than the pattern part and the conductor top part, and the conductor circuit had a design value. It has been etched above.
【0088】本発明は上記に複数の実施の形態を示した
が、この記載が本発明を限定するものであると理解すべ
きではない。この開示から当業者にはここでは記載して
いない様々な代替実施の形態、実施例、運用技術が明ら
かとなろう。したがって、本発明の技術的範囲は上記の
説明から妥当な特許請求に係る発明特定事項によっての
み定められるものである。Although the present invention has been described with reference to a plurality of embodiments, it should not be understood that this description limits the present invention. From this disclosure, various alternative embodiments, examples, and operation techniques not described here will be apparent to those skilled in the art. Therefore, the technical scope of the present invention is defined only by the matters specifying the invention according to the claims which are appropriate from the above description.
【0089】[0089]
【発明の効果】以上、本発明によれば、製法の異なる2
つ以上の同種金属を選択的にエッチングすることがで
き、さらには、これをプリント配線板の製造方法に用い
ることで、導体回路間のショート不良が少なく、回路形
成性のよいプリント配線板を製造することが出来る。As described above, according to the present invention, there are two different manufacturing methods.
One or more metals of the same kind can be selectively etched. Furthermore, by using this in a method for manufacturing a printed wiring board, it is possible to manufacture a printed wiring board with few short circuits between conductor circuits and good circuit formability. You can do it.
【図1】本発明によるプリント配線板の製造工程の一例
を示す断面図である。FIG. 1 is a cross-sectional view showing an example of a manufacturing process of a printed wiring board according to the present invention.
【図2】比較例5のプリント配線板の製造工程を示す断
面図である。FIG. 2 is a cross-sectional view showing a manufacturing process of a printed wiring board of Comparative Example 5.
【図3】製法の違いによる銅の結晶構造の違いを示す写
真。FIG. 3 is a photograph showing a difference in crystal structure of copper due to a difference in manufacturing method.
【図4】回路間エッチング残りまたは回路間Auめっき
析出を示す回路の断面図である。FIG. 4 is a cross-sectional view of a circuit showing inter-circuit etching residue or inter-circuit Au plating deposition.
【図5】L/S=20/20とした以外は実施例1と同
条件で作製した配線基板のSEM画像。FIG. 5 is an SEM image of a wiring board manufactured under the same conditions as in Example 1 except that L / S = 20/20.
【図6】L/S=20/20とした以外は比較例2と同
条件で作製した配線基板のSEM画像。FIG. 6 is an SEM image of a wiring board manufactured under the same conditions as in Comparative example 2 except that L / S = 20/20.
10、20 内層導体回路 11、21 内層回路基板 12、22 スルーホール 13 銅箔 14、24 層間絶縁樹脂層 15、25 IVH 16、26 無電解銅めっき層 17、27 電気めっきレジスト 18、28 電気銅めっき層 19、29 Ni/Auめっき層 10, 20 Inner layer conductor circuit 11, 21 Inner layer circuit board 12,22 through hole 13 Copper foil 14, 24 interlayer insulating resin layer 15, 25 IVH 16, 26 Electroless copper plating layer 17, 27 Electroplating resist 18, 28 Electro copper plating layer 19, 29 Ni / Au plating layer
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 FI テーマコート゛(参考) H05K 3/26 H05K 3/26 E 3/46 3/46 N (72)発明者 伊藤 豊樹 東京都新宿区西新宿2丁目1番1号 日立 化成工業株式会社内 (72)発明者 有家 茂晴 茨城県下館市大字小川1500番地 日立化成 工業株式会社総合研究所内 (72)発明者 中祖 昭士 茨城県下館市大字小川1500番地 日立化成 工業株式会社総合研究所内 (72)発明者 遠藤 俊博 茨城県下館市大字小川1500番地 日立化成 工業株式会社総合研究所内 Fターム(参考) 4E351 AA03 BB33 BB35 DD04 EE03 GG20 4K057 DK03 WA11 WA13 WB04 WB15 WC08 WE02 WE03 WE25 WG01 WG02 WG07 WN01 5E339 AB02 AC01 AD03 BC02 BD03 BD08 BD11 BE13 BE17 CE12 CE19 CE20 CF07 5E343 AA07 AA15 AA17 BB18 BB23 BB24 BB44 BB67 DD33 DD76 EE52 GG11 5E346 AA15 AA35 CC04 CC09 CC32 CC37 CC38 DD12 DD25 FF07 FF15 GG22 HH32 ─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. 7 Identification code FI theme code (reference) H05K 3/26 H05K 3/26 E 3/46 3/46 N (72) Inventor Toyoki Toyoki Shinjuku-ku, Tokyo Nishi-Shinjuku 2-1-1, Hitachi Chemical Co., Ltd. (72) Inventor Shigeharu Ariya 1500 Ogawa Oji, Shimodate-shi, Ibaraki Hitachi Chemical Co., Ltd. Research Institute (72) Inventor Akashi Nakaso Shimodate, Ibaraki Prefecture City Oji 1500 Ogawa Hitachi Chemical Co., Ltd. Research Institute (72) Inventor Toshihiro Endo 1500, Ogawa Shimodate, Ibaraki City Ogawa Hitachi Chemical Co., Ltd. Research Institute F term (reference) 4E351 AA03 BB33 BB35 DD04 EE03 GG20 4K057 DK03 WA11 WA13 WB04 WB15 WC08 WE02 WE03 WE25 WG01 WG02 WG07 WN01 5E339 AB02 AC01 AD03 BC02 BD03 BD08 BD11 BE13 BE17 CE12 CE19 CE20 CF07 5E343 AA07 AA15 AA17 BB1 8 BB23 BB24 BB44 BB67 DD33 DD76 EE52 GG11 5E346 AA15 AA35 CC04 CC09 CC32 CC37 CC38 DD12 DD25 FF07 FF15 GG22 HH32
Claims (24)
的にエッチングする際、反応律速性となるエッチング液
を用いることを特徴とするエッチング方法。1. An etching method, characterized in that an etching solution having a reaction rate-determining property is used when selectively etching two or more same metals produced by different methods.
の方のエッチング速度が易溶性の方のエッチング速度の
80%以下であることを特徴とする請求項1に記載のエ
ッチング方法。2. The etching method according to claim 1, wherein the etching rate of the poorly soluble one of the two or more same metals is 80% or less of the etching rate of the easily soluble one.
ない酸と過酸化水素を主成分とすることを特徴とする請
求項1または2に記載のエッチング方法。3. The etching method according to claim 1, wherein the etching solution contains an acid containing no halogen element and hydrogen peroxide as main components.
あることを特徴とする請求項3に記載のエッチング方
法。4. The etching method according to claim 3, wherein the acid containing no halogen element is sulfuric acid.
記過酸化水素の濃度が5〜200g/Lであることを特
徴とする請求項4に記載のエッチング方法。5. The etching method according to claim 4, wherein the concentration of the sulfuric acid is 5 to 300 g / L and the concentration of the hydrogen peroxide is 5 to 200 g / L.
が20〜50℃の範囲であることを特徴とする請求項1
〜5のいずれかに記載のエッチング方法。6. The liquid temperature of the etching liquid during etching is in the range of 20 to 50 ° C.
6. The etching method according to any one of to 5.
であることを特徴とする請求項1〜6のいずれかに記載
のエッチング方法。7. The etching method according to claim 1, wherein the two or more same metals are two or more copper.
前記銅の酸化反応であることを特徴とする請求項7に記
載のエッチング方法。8. The etching method according to claim 7, wherein the rate-determining step of etching the copper is an oxidation reaction of the copper.
きにより作製されていることを特徴とする請求項7また
は8に記載のエッチング方法。9. The etching method according to claim 7, wherein each of the two or more copper is produced by electrolytic copper plating.
記2つ以上の銅のうち難溶性の銅が硫酸銅めっき液を用
いて作製されており、易溶性の銅がピロリン酸銅めっき
液を用いて作製されていることを特徴とする請求項9に
記載のエッチング方法。10. The sparingly soluble copper of the two or more coppers produced by the electrolytic copper plating is produced by using a copper sulfate plating solution, and the easily soluble copper is produced by a copper pyrophosphate plating solution. The etching method according to claim 9, wherein the etching method is produced by:
記2つ以上の銅がいずれも硫酸銅めっき液を用いて作製
され、かつ、易溶性の銅が難溶性の銅よりも高い電流密
度で作製されていることを特徴とする請求項9に記載の
エッチング方法。11. The two or more coppers produced by the electrolytic copper plating are both produced using a copper sulfate plating solution, and the easily soluble copper is produced at a higher current density than the sparingly soluble copper. The etching method according to claim 9, wherein the etching method is performed.
電流密度で作製され、かつ、前記難溶性の銅が5A/d
m2以下の電流密度で作製されていることを特徴とする
請求項11に記載のエッチング方法。12. The easily soluble copper is produced at a current density of 5 A / dm 2 or more, and the sparingly soluble copper is 5 A / d.
The etching method according to claim 11, wherein the etching method is performed at a current density of m 2 or less.
の一部として易溶性金属層を形成する工程、 前記易溶性金属層上にパターン電気めっきレジストを形
成した後、電気めっきにより前記易溶性金属と製法の異
なる同種金属である難溶性金属層を形成する工程、 パターン部以外の前記易溶性金属層を、請求項1〜12
のいずれかに記載のエッチング方法により、選択的にエ
ッチング除去する工程、を少なくとも有することを特徴
とするプリント配線板の製造方法。13. A step of forming an easily soluble metal layer as a power supply layer or a part of the power supply layer on an inner layer circuit board, after forming a pattern electroplating resist on the easily soluble metal layer, the easily soluble metal layer is formed by electroplating. A step of forming a refractory metal layer which is a same kind of metal and a manufacturing method different from that of the metal, and the easily soluble metal layer other than the pattern portion,
9. A method for manufacturing a printed wiring board, comprising at least a step of selectively etching and removing by the etching method according to any one of 1.
は前記銅箔上に形成される無電解銅めっき層であること
を特徴とする請求項13に記載のプリント配線板の製造
方法。14. The method for manufacturing a printed wiring board according to claim 13, wherein the easily soluble metal layer is a copper foil and / or an electroless copper plating layer formed on the copper foil.
とを特徴とする請求項14に記載のプリント配線板の製
造方法。15. The method of manufacturing a printed wiring board according to claim 14, wherein the copper foil has a thickness of 1 to 5 μm.
〜1μm以下であることを特徴とする請求項14または
15のいずれかに記載のプリント配線板の製造方法。16. The electroless copper plating layer has a thickness of 0.1.
The method for manufacturing a printed wiring board according to claim 14, wherein the printed wiring board has a thickness of 1 μm or less.
あることを特徴とする請求項13〜16のいずれかに記
載のプリント配線板の製造方法。17. The method for manufacturing a printed wiring board according to claim 13, wherein the hardly soluble metal layer is an electrolytic copper plating layer.
いて作製され、かつ前記電気銅めっき層が硫酸銅めっき
液を用いて作製されていることを特徴とする請求項14
〜17のいずれかに記載のプリント配線板の製造方法。18. The copper foil is produced using a copper pyrophosphate plating solution, and the electrolytic copper plating layer is produced using a copper sulfate plating solution.
A method for manufacturing a printed wiring board according to any one of 1 to 17.
がいずれも硫酸銅めっき液を用いて作製され、かつ前記
電気めっき時の電流密度が銅箔作製時の電流密度よりも
低いことを特徴とする請求項14〜17のいずれかに記
載のプリント配線板の製造方法。19. The copper foil and the copper electroplating layer are both produced using a copper sulfate plating solution, and the current density during electroplating is lower than the current density during copper foil production. The method for manufacturing a printed wiring board according to any one of claims 14 to 17.
度で作製されており、かつ前記電気銅めっき層が5A/
dm2以下の電流密度で作製されていることを特徴とす
る請求項19に記載のプリント配線板の製造方法。20. The copper foil is produced at a current density of 5 A / dm 2 or more, and the electrolytic copper plating layer is 5 A / dm 2.
The method for producing a printed wiring board according to claim 19, wherein the method is produced at a current density of dm 2 or less.
IVH(インタースティシャルバイアホール)を形成す
る工程をさらに有することを特徴とする請求項13〜2
0のいずれかに記載のプリント配線板の製造方法。21. The method according to claim 13, further comprising the step of forming an IVH (interstitial via hole) for interlayer connection in the inner layer circuit board.
0. A method for manufacturing a printed wiring board according to 0.
の間にプリプレグを積層する工程をさらに有することを
特徴とする請求項13〜21に記載のプリント配線板の
製造方法。22. The method of manufacturing a printed wiring board according to claim 13, further comprising a step of laminating a prepreg between the inner layer circuit board and the easily soluble metal layer.
化剤により配線基板表面を洗浄する工程をさらに有する
ことを特徴とする請求項13〜22に記載のプリント配
線板の製造方法。23. The method of manufacturing a printed wiring board according to claim 13, further comprising the step of cleaning the surface of the wiring board with an oxidizing agent after removing the electroplating resist.
ことを特徴とする請求項23に記載のプリント配線板の
製造方法。24. The method of manufacturing a printed wiring board according to claim 23, wherein the oxidizing agent comprises permanganate.
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JP2007060815A Division JP4555998B2 (en) | 2002-03-01 | 2007-03-09 | Printed wiring board |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007189177A (en) * | 2006-01-16 | 2007-07-26 | Sumitomo Metal Mining Co Ltd | Flexible wiring board and its manufacturing method |
CN104170532A (en) * | 2012-03-16 | 2014-11-26 | 住友电木株式会社 | Manufacturing method for laminated board and printed wiring board |
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2003
- 2003-02-27 JP JP2003051023A patent/JP3951938B2/en not_active Expired - Fee Related
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007189177A (en) * | 2006-01-16 | 2007-07-26 | Sumitomo Metal Mining Co Ltd | Flexible wiring board and its manufacturing method |
JP4735274B2 (en) * | 2006-01-16 | 2011-07-27 | 住友金属鉱山株式会社 | Flexible wiring board and manufacturing method thereof. |
CN104170532A (en) * | 2012-03-16 | 2014-11-26 | 住友电木株式会社 | Manufacturing method for laminated board and printed wiring board |
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